JP2000513499A - ばね要素を成形するための方法及び装置 - Google Patents
ばね要素を成形するための方法及び装置Info
- Publication number
- JP2000513499A JP2000513499A JP08535950A JP53595096A JP2000513499A JP 2000513499 A JP2000513499 A JP 2000513499A JP 08535950 A JP08535950 A JP 08535950A JP 53595096 A JP53595096 A JP 53595096A JP 2000513499 A JP2000513499 A JP 2000513499A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- core
- capillary
- substrate
- forming tool
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 140
- 239000000463 material Substances 0.000 claims abstract description 103
- 239000002131 composite material Substances 0.000 claims abstract description 60
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 45
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052737 gold Inorganic materials 0.000 claims abstract description 37
- 239000010931 gold Substances 0.000 claims abstract description 37
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 22
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 17
- 239000000956 alloy Substances 0.000 claims abstract description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000007779 soft material Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 106
- 230000008569 process Effects 0.000 claims description 23
- 238000005520 cutting process Methods 0.000 claims description 22
- 230000001681 protective effect Effects 0.000 claims description 20
- 238000000465 moulding Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000003825 pressing Methods 0.000 claims description 11
- 239000011253 protective coating Substances 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 238000007772 electroless plating Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 3
- 238000004377 microelectronic Methods 0.000 claims description 3
- 238000005240 physical vapour deposition Methods 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 1
- 239000003292 glue Substances 0.000 claims 1
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 239000011162 core material Substances 0.000 description 84
- 239000010410 layer Substances 0.000 description 54
- 238000007747 plating Methods 0.000 description 16
- 230000008901 benefit Effects 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- 238000007493 shaping process Methods 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 230000000873 masking effect Effects 0.000 description 7
- 230000004044 response Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005489 elastic deformation Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4007—Surface contacts, e.g. bumps
- H05K3/4015—Surface contacts, e.g. bumps using auxiliary conductive elements, e.g. pieces of metal foil, metallic spheres
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4885—Wire-like parts or pins
- H01L21/4889—Connection or disconnection of other leads to or from wire-like parts, e.g. wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/325—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor
- H05K3/326—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor the printed circuit having integral resilient or deformable parts, e.g. tabs or parts of flexible circuits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/02—Heating or cooling
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.基板のある領域と、ワイヤボンディング装置の毛細管との間に延伸する伸長 要素の一部を成形する方法において、 伸長要素の一部にある形状を付与するために、伸長要素の一部に対して成形工 具を押し当てるステップを含むことを特徴とする方法。 2.前記伸長要素はワイヤであることを特徴とする、請求項1に記載の方法。 3.基板の前記領域は、電子コンポーネント上の1つの端子であることを特徴と する、請求項1に記載の方法。 4.前記基板は犠牲基板であることを特徴とする、請求項1に記載の方法。 5.前記伸長要素を成形するステップと関連して、前記伸長要素の成形済み部分 を、前記伸長要素の残りの部分から切断するステップを含むことを特徴とする、 請求項1に記載の方法。 6.前記伸長要素の成形済み部分を、前記伸長要素の残りの部分から、スパーク を用いて切断するステップを含むことを特徴とする、請求項5に記載の方法。 7.前記スパークは、前記成形工具に実装された電極により与えられることを特 徴とする、請求項6に記載の方法。 8.前記スパークは、前記毛細管に対して固定関係で実装された電極により与え られることを特徴とする、請求項6に記載の方法。 9.前記伸長要素を、前記成形工具上の切断特徴を用いて切断する ステップを含むことを特徴とする、請求項1に記載の方法。 10.端部同士が接続された複数の成形済み伸長要素を、該伸長要素の連続した部 分に対して、前記成形工具を繰り返し押し当てることにより生成するステップを 含むことを特徴とする、請求項5に記載の方法。 11.前記成形工具は、基板と平行である方向に移動されることを特徴とする、請 求項1に記載の方法。 12.前記成形工具は、基板に向かう方向に移動されることを特徴とする、請求項 1に記載の方法。 13.前記伸長要素と前記成形工具の間で、電気的な接続をなすステップを含むこ とを特徴とする、請求項1に記載の方法。 14.前記毛細管に隣接した前記伸長要素を、電極からのスパークを用いて切断す るステップを含むことを特徴とする、請求項1に記載の方法。 15.毛細管であって、基板の1つの表面上のある領域に、該毛細管を通過する供 給ワイヤの一端をボンディングするために、一方の方向に移動可能であり、また ワイヤの一端が基板と毛細管の間で延伸するように、反対の方向に移動可能であ る毛細管からなる、ワイヤボンディング装置において、 上記ワイヤの端部に所望の形状を付与するために、上記ワイヤの端部に直接 作用する成形工具からなることを特徴とする、ワイヤボンディング装置。 16.前記ワイヤの端部に対して、前記成形工具を押し当てるための 手段からなることを特徴とする、請求項15に記載のワイヤボンディング装置。 17.前記成形工具に実装されたEFO電極からなることを特徴とする、請求項1 5に記載のワイヤボンディング装置。 18.前記成形工具は、1つのアンビルと1つのダイからなり、該アンビルは、前 記ワイヤの端部の一方の側に配設され、上記ダイは、前記ワイヤの端部の反対側 に配設され、前記所望の形状は、上記アンビル及び上記ダイが、それらの間のワ イヤの端部と共に、互いに向かって移動される場合に、前記ワイヤの端部に付与 されることを特徴とする、請求項15に記載のワイヤボンディング装置。 19.前記アンビルと前記ダイが、互いに向かって移動される場合、前記伸長要素 に少なくとも刻み目を付けるのに適した、前記アンビルと前記ダイのうちの少な くとも1つ上の特徴部からなることを特徴とする、請求項18に記載のワイヤボ ンディング装置。 20.前記特徴部は、前記ワイヤの端部を、前記ワイヤの残りの部分から完全に切 断するのに適していることを特徴とする、請求項19に記載のワイヤボンディン グ装置。 21.複合相互接続要素を製作する方法において、 コア要素に弾力のある形状を付与するために、伸長コア要素に対して、成形 工具を押し当てるステップと、 結果としての複合相互接続要素に、所望の大きさの復元性を付与して、該復 元性を支配するのに十分な厚さ、及び十分な降伏強度の材料で、上記コア要素に 保護膜を施すステップと、 を含む方法。 22.前記コア要素に対して、前記成形工具を押し当てるステップに先行して、電 子コンポーネント上の端子に、前記コア要素の一端をボンディングするステップ を更に含む、請求項21に記載の方法。 23.前記コア要素は、金、銅、アルミニウム、及びそれらの合金から構成される グループから選択された材料である、請求項21に記載の方法。 24.前記成形済みコア要素には、ニッケル、及びその合金から構成されるグルー プから選択された材料で保護膜が施される、請求項21に記載の方法。 25.前記コア要素は、第1の軸で測定した場合、0.0003−0.0015イ ンチの厚さを有する、請求項21に記載の方法。 26.前記コア要素は、前記第1の軸と直交する第2の軸で測定した場合、0.0 010−0.0100インチの厚さを有する、請求項25に記載の方法。 27.前記コア要素は非円形断面を有する、請求項21に記載の方法。 28.電子コンポーネントの端子に、相互接続要素を実装する方法において、 電子コンポーネントの端子に、コア要素を取り付けるステップと、 該コア要素を成形工具で成形するステップと、 前記端子に、結果としての複合相互接続要素を確実に実装する のに十分な厚さ、及び十分な降伏強度の材料で、上記コア要素、及び上記端子の 少なくとも隣接部分に、保護膜を施すステップであって、該保護膜材料は、上記 端子への上記結果としての相互接続要素の締結に対して実質的に寄与する、保護 膜を施すステップと、 を含む方法。 29.前記コア要素は、金、銅、アルミニウム、及びそれらの合金から構成される グループから選択された材料である、請求項28に記載の方法。 30.前記コア要素には、ニッケル、及びその合金から構成されるグループから選 択された材料で保護膜が施される、請求項28に記載の方法。 31.前記コア要素は、0.0003−0.0010インチの厚さを有する、請求 項28に記載の方法。 32.前記コア要素に保護膜を施す前記材料は、0.0010インチより少ない公 称厚さを有する、請求項28に記載の方法。 33.相互接続要素を製造する方法において、 犠牲基板の1つの表面に、複数のコア要素を実装するステップと、 該コア要素を成形工具で成形するステップと、 該コア要素に、少なくとも1つの材料の少なくとも1つの層で、保護膜を施 すステップと、 上記犠牲基板を除去するステップと、 を含む方法。 34.超小型電子用途で使用するために、相互接続要素を製作する方法において、 比較的軟質の材料からなるコア要素を与えるステップと、 該コア要素を成形工具で成形するステップと、 該コア要素に、比較的硬質の材料からなるシェルで、保護膜を施すステップ と、 を含む方法。 35.前記コア要素には、水溶液からの材料の堆積、電解メッキ、無電解メッキ、 化学気相成長(CVD)、物理気相成長(PVD)、及び液体、固体、又は気体 の壊変を引き起こす工程を伴う、各種の工程から構成されるグループから選択さ れた1つの工程によって、保護膜が施される、請求項34に記載の方法。 36.前記コア要素は、金、銅、アルミニウム、及びそれらの合金から構成される グループから選択された材料である、請求項34に記載の方法。 37.前記シェルは、ニッケル、及びその合金から構成されるグループから選択さ れた材料である、請求項34に記載の方法。 38.前記コア要素は第1の降伏強度を有し、前記シェルは第2の降伏強度を有し 、該第2の降伏強度は、上記第1の降伏強度の少なくとも2倍である、請求項3 4に記載の方法。 39.電子コンポーネントの端子に、相互接続要素を実装する方法において、 電子コンポーネントの端子に、第1の材料からなる伸長要素を取り付けるス テップと、 該伸長要素を成形工具で成形するステップと、 該伸長要素に、上記第1の材料よりも高い降伏強度を有する第2の材料で、 保護膜を施すステップと、 を含む方法。 40.前記伸長要素に保護膜を施す間、前記端子の露出表面の少なくとも一部に、 前記第2の材料で保護膜を施すステップを更に含む、請求項39に記載の方法。 41.ワイヤボンディングを実施する方法において、 毛細管を介して供給ワイヤを送るステップと、 基板の1つの表面上のある領域に、該基板の該表面に対して上記毛細管を押 し当てることにより、上記供給ワイヤの一端をボンディングするステップと、 上記基板の上記表面から上記毛細管を離して移動させ、それによって、上記 供給ワイヤを、上記毛細管から繰り出し、上記毛細管と上記基板の表面との間で 、ワイヤステムとして延伸せしめるステップと、 上記基板の表面から上のある距離で、上記毛細管を停止させるステップと、 上記毛細管を停止させた後、上記ワイヤステムに対して成形工具を押し当て るステップと、 を含む方法。 42.前記ワイヤステムに対して前記成形工具を押し当てた後、前記ワイヤステム が、自立型のワイヤステムとなるように、また前記供給ワイヤが新しい端部を有 するように、前記毛細管において前記ワイヤステムを切断するステップを更に含 む、請求項41に記載の方法。 43.前記ワイヤステムは、電子的火炎射出(EFO)の工程によって切断される 、請求項42に記載の方法。 44.前記ワイヤステムを切断する間、前記ワイヤステムの自由端において、ボー ルを形成するステップを更に含む、請求項42に記載の方法。 45.前記ワイヤステムを切断する間、前記供給ワイヤの新しい端部において、ボ ールを形成するステップを更に含む、請求項42に記載の方法。 46.伸長要素を切断する方法であって、 該伸長要素に隣接して、電極を位置決めするステップと、 上記電極と上記伸長要素の間に、放電を発生させるステップと、 を含む方法において、 放電を発生させるステップに先行して、上記伸長要素の切断を所望する位置 において、上記伸長要素の断面を低減し、それによって、スパーク切断の場所を 保証するステップを含むことを特徴とする方法。 47.前記伸長要素は、ワイヤであることを特徴とする、請求項46に記載の方法 。 48.前記伸長要素は、複合相互接続要素のコアであることを特徴とする、請求項 46に記載の方法。 49.前記伸長要素は、リボン状ワイヤであることを特徴とする、請求項46に記 載の方法。 50.伸長要素を成形する方法において、 該伸長要素の一部を毛細管から繰り出すステップと、 該伸長要素の繰り出された部分に対して、成形工具を押し当てるステップと 、 上記繰り出された部分に対して上記成形工具を押し当てる間、 上記毛細管を移動させるステップと、 を含む方法。 51.前記伸長要素は、ワイヤであることを特徴とする、請求項50に記載の方法 。 52.前記伸長要素は、複合相互接続要素のコアであることを特徴とする、請求項 50に記載の方法。 53.前記伸長要素は、リボン状ワイヤであることを特徴とする、請求項50に記 載の方法。
Applications Claiming Priority (20)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US558,332 | 1975-03-14 | ||
US08/452,255 US6336269B1 (en) | 1993-11-16 | 1995-05-26 | Method of fabricating an interconnection element |
US08/452,255 | 1995-05-26 | ||
US52624695A | 1995-09-21 | 1995-09-21 | |
US08/526,246 | 1995-09-21 | ||
US08/533,584 | 1995-10-18 | ||
US08/533,584 US5772451A (en) | 1993-11-16 | 1995-10-18 | Sockets for electronic components and methods of connecting to electronic components |
US08/554,902 | 1995-11-09 | ||
US08/554,902 US5974662A (en) | 1993-11-16 | 1995-11-09 | Method of planarizing tips of probe elements of a probe card assembly |
PCT/US1995/014909 WO1996017378A1 (en) | 1994-11-15 | 1995-11-13 | Electrical contact structures from flexible wire |
US08/558,332 US5829128A (en) | 1993-11-16 | 1995-11-15 | Method of mounting resilient contact structures to semiconductor devices |
US08/558,332 | 1995-11-15 | ||
US554,902 | 1996-02-15 | ||
US533,584 | 1996-02-15 | ||
US526,246 | 1996-02-15 | ||
US95/14909 | 1996-02-15 | ||
US452,255 | 1996-02-15 | ||
US1324796P | 1996-03-11 | 1996-03-11 | |
US60/013,247 | 1996-03-11 | ||
PCT/US1996/008276 WO1996037334A1 (en) | 1995-05-26 | 1996-05-28 | Method and apparatus for shaping spring elements |
Publications (2)
Publication Number | Publication Date |
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JP2000513499A true JP2000513499A (ja) | 2000-10-10 |
JP3157005B2 JP3157005B2 (ja) | 2001-04-16 |
Family
ID=27555753
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53595096A Expired - Fee Related JP3157005B2 (ja) | 1995-05-26 | 1996-05-28 | ばね要素を成形するための方法及び装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP3157005B2 (ja) |
AU (1) | AU6028796A (ja) |
WO (1) | WO1996037334A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6812718B1 (en) | 1999-05-27 | 2004-11-02 | Nanonexus, Inc. | Massively parallel interface for electronic circuits |
US6799976B1 (en) | 1999-07-28 | 2004-10-05 | Nanonexus, Inc. | Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies |
US7382142B2 (en) | 2000-05-23 | 2008-06-03 | Nanonexus, Inc. | High density interconnect system having rapid fabrication cycle |
US7952373B2 (en) * | 2000-05-23 | 2011-05-31 | Verigy (Singapore) Pte. Ltd. | Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2429222A (en) * | 1943-06-05 | 1947-10-21 | Bell Telephone Labor Inc | Method of making contact wires |
US5476211A (en) * | 1993-11-16 | 1995-12-19 | Form Factor, Inc. | Method of manufacturing electrical contacts, using a sacrificial member |
US4674671A (en) * | 1985-11-04 | 1987-06-23 | Olin Corporation | Thermosonic palladium lead wire bonding |
DE69222957D1 (de) * | 1991-09-30 | 1997-12-04 | Ceridian Corp | Plattierter nachgiebiger leiter |
US5495667A (en) * | 1994-11-07 | 1996-03-05 | Micron Technology, Inc. | Method for forming contact pins for semiconductor dice and interconnects |
-
1996
- 1996-05-28 AU AU60287/96A patent/AU6028796A/en not_active Abandoned
- 1996-05-28 JP JP53595096A patent/JP3157005B2/ja not_active Expired - Fee Related
- 1996-05-28 WO PCT/US1996/008276 patent/WO1996037334A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
AU6028796A (en) | 1996-12-11 |
JP3157005B2 (ja) | 2001-04-16 |
WO1996037334A1 (en) | 1996-11-28 |
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