JP2000354952A - Polishing member, polishing method, polishing device, manufacture of semiconductor device and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To heighten the polishing speed and to improve stepped part eliminating performance by forming at least a machining surface part of a polishing member from no-foam resin, suitable for use in a flattening polishing process for a semiconductor device and forming a projecting and recessed part made by concentric, spiral, grid-like groove structure. SOLUTION: With a polishing agent 6 dropped from a supply part 5 interposed between a polishing pad 2 as a polishing member and a wafer 4 as a material to be polished, both 2, 4 of them are moved relatively to polish the polishing wafer 4. In thus constructed device, at least the machining surface part of the polishing pad 2 is made of non-foam resin and provided with plural projecting and recessed parts of a groove structure. The groove structure is one or combination of two selected from a group of concentric, spiral, grid-like, triangular grid-like and radial grooves, and the section of the recessed part and the projecting part of the projecting and recessed part is rectangular, trapezoidal or triangular. Thus, supplied polishing agent can effectively contribute to polishing to improve polishing efficiency.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing member and a polishing method, and more particularly, to a polishing member for CMP suitable for use in a flattening polishing process of a semiconductor device performed in a process of manufacturing a semiconductor such as ULSI. The present invention relates to a polishing method used, a polishing apparatus using the polishing member, a semiconductor device manufacturing method, and a semiconductor device.

[0002]

2. Description of the Related Art As the degree of integration and miniaturization of semiconductor integrated circuits increases, the number of steps in a semiconductor manufacturing process increases and becomes more complicated. Along with this, the surface of a semiconductor device is not necessarily flat. The presence of a step on the surface causes disconnection of the wiring, an increase in local resistance, and the like, resulting in disconnection and a decrease in electric capacity. In addition, in the case of an insulating film, withstand voltage degradation and leakage may occur.

On the other hand, the light source wavelength of optical lithography has been shortened with the increase in the degree of integration and miniaturization of semiconductor integrated circuits, and the numerical aperture, or NA, has been increased. It is getting shallower. In order to cope with the shallow depth of focus, flattening of the device surface is required more than ever. As a method of flattening such a semiconductor surface, a chemical mechanical polishing (Chemical Mechanical Polishing or Chemical Mecha
(Nical Planarization, hereinafter referred to as CMP) is considered a promising method.

[0004] CMP is performed using an apparatus as shown in FIG. In FIG. 5, 1 is a CMP apparatus, 10 is a polishing body, 3 is a polishing head, 4 is a wafer, 5 is an abrasive supply section, and 6 is an abrasive. The polishing body 10 is obtained by attaching a polishing pad 2 on a surface plate 7. As the polishing pad 2, a sheet-like material made of a foamable resin such as foamed polyurethane is often used. The polishing head 3 is rotated in the direction of the arrow by a suitable means, and the polishing body 10 is rotated in the direction of the arrow by a suitable means. In this process, the wafer 4
The surface to be polished is polished by the action of the polishing agent 6 and the polishing pad 2.

When a sheet-like polishing pad made of a conventional foaming resin (hereinafter referred to as a foaming polishing pad) is used, the polishing uniformity over the entire wafer is good. However,
Foaming polishing pads generally have (1) large edge droop,
(2) There is a problem that a compressive deformation is caused when a load is applied. For these reasons, the foaming polishing pad is not good in removing the step on the patterned wafer, that is, the polishing flatness. Therefore, recently, a polishing pad made of a non-foamed and harder resin (hereinafter referred to as a non-foamed polishing pad)
Is being considered.

The non-foamed polishing pad forms irregularities having a groove structure on the surface of a hard polymer material and polishes an object to be polished, in this case, a wafer surface. By using a non-foaming polishing pad, the problem of eliminating the step, which was a problem when a foaming polishing pad was used, was solved.

[0007]

Generally, important factors that determine the polishing rate of a polishing pad include the retention and fluidity of the polishing agent on the polishing pad surface. Hard non-foamed polishing pads are inferior to foamed polishing pads in terms of abrasive retention. If the conventional non-foamed polishing pad is fixed on the surface plate and the surface plate is rotated at a high speed while supplying the abrasive, the abrasive is blown out of the polishing pad by centrifugal force. In addition, since the retention of the abrasive is low, there is a problem that the supplied abrasive does not effectively contribute to the improvement of the polishing rate.

The present invention has been made to solve this problem, and the supplied abrasive effectively contributes to polishing.
Efficient polishing for abrasive supply, high polishing rate due to high abrasive retention and fluidity, and low scratch generation, non-foaming with excellent step resolution It is an object to provide a polishing member, a polishing method and a polishing apparatus using the same.

Further, the present invention provides a semiconductor device manufacturing method capable of manufacturing a semiconductor device at low cost as compared with a conventional semiconductor device manufacturing method by reducing the cost of the polishing step and improving the process efficiency. Another object of the present invention is to provide a low-cost semiconductor device.

[0010]

In order to solve the above-mentioned problems, the present invention firstly provides a method of manufacturing a semiconductor device, comprising the steps of: "a polishing member is interposed between a polishing member and an object to be polished; By relatively moving the object, in the polishing member used in the polishing apparatus for polishing the object to be polished, at least a processing surface portion of the polishing member is made of non-foamed resin, a plurality of uneven portions having a groove structure, The polishing member according to claim 1, wherein the groove structure comprises one or a combination of two or more selected from the group of concentric, spiral, lattice, triangular lattice, and radial grooves. )"I will provide a.

Second, the cross section of the concave portion (groove portion) and the convex portion of the concave and convex portion has at least one shape selected from a rectangle, a trapezoid, and a triangle. Polishing member (claim 2). "

Third, the polishing member according to claim 2, wherein the shape of the rectangle, the trapezoid, or the triangle satisfies the following condition: a ≧ b, b ≧ 0, c ≧ 0 ( Here, a is the length of the bottom of the projection, b is the length of the top of the projection, and c is the length of the bottom of the depression.) (Claim 3) ".

Fourth, the polishing member according to claim 3, wherein the shape of the rectangle, the trapezoid, or the triangle satisfies the following condition: 0.0 mm ≦ b ≦ 3.0 mm, 0. 1mm ≦ a + c ≦
5.0 mm, d ≧ 0.1 mm (where d is the depth of the concave portion) (Claim 4).

Fifth, "the cross section of the concave portion (groove portion) of the concave and convex portion has a shape having a curved portion.
The polishing member according to claim 5 is provided.

Sixth, the polishing member according to claim 5, wherein the shape having the curved portion satisfies the following condition: 0.0 mm ≦ e ≦ 3.0 mm, 0.1 mm ≦ e + f ≦
5.0 mm, g ≧ 0.1 mm (where e is the length of the upper side of the convex portion, f is the length of the upper side of the concave portion, and g is the depth of the concave portion.) I do.

Seventh, the present invention provides "a polishing member according to any one of claims 1 to 6, wherein the uneven portion has a periodic structure of unevenness."

Eighth, the non-foamed resin has a Vickers hardness of 1.5 kg / mm ² or more or a compression Young's modulus of 2
^{2. The method according} to claim 1, wherein the weight is 5 kg / mm ² or more.
The polishing member according to any one of claims 7 to 7 (claim 8) "is provided.

Ninth, a polishing method for polishing the object to be polished by relatively moving the polishing member and the object to be polished in a state in which an abrasive is interposed between the polishing member and the object to be polished. , A polishing method (claim 9) using the polishing member according to any one of claims 1 to 8 is provided.

Tenth, "controlling the temperature of the polishing member, and setting the polishing member to a Vickers hardness of 1.5 kg / mm.
The polishing method according to claim 9, characterized in that it comprises a step of polishing under the conditions satisfying ^more or compressive Young's modulus 25 kg / mm ² or more to provide (claim 10). "

Eleventh, there is provided "a polishing member according to any one of claims 1 to 8, wherein the object to be polished is a wafer on which semiconductor devices are formed (claim 11)." .

Twelfthly, there is provided a "polishing method according to any one of claims 9 and 10, wherein the object to be polished is a wafer on which semiconductor devices are formed. .

Thirteenth, a polishing method for polishing the polishing object by relatively moving the polishing member and the polishing object in a state where an abrasive is interposed between the polishing member and the polishing object. In the apparatus, the polishing member is provided with any one of claims 1 to 5.
A polishing apparatus (claim 13) using the polishing member according to any one of claims 8 and 11 is provided.

Fourteenthly, there is provided a "method of manufacturing a semiconductor device, characterized by comprising a step of flattening the surface of a semiconductor silicon wafer by using the polishing apparatus of the present invention.

A fifteenth aspect provides a "semiconductor device characterized by being manufactured by the semiconductor device manufacturing method according to a fourteenth aspect (claim 15)."

[0025]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be specifically described below with reference to the drawings.

FIG. 1 is an enlarged cross-sectional view of a concave / convex portion having a groove structure in a processing surface portion of a polishing member according to a first embodiment of the present invention, where a is the length of the bottom of the convex portion, and b is the convex portion. , C represents the length of the bottom of the recess (groove), and d represents the depth of the groove. Here, it is preferable that the uneven portion has a periodic structure. In this case, p in FIG. 1 is the pitch of the periodic structure of the unevenness of the uneven portion (hereinafter referred to as the pitch of the groove), and p−
b is the width of the groove (upper part of the recess). In FIG. 1, only the processing surface portion of the polishing member is shown, but the polishing member according to the present invention includes:
If at least the processed surface has a groove structure made of non-foamed resin, it may be in the form of a sheet or a plate, or a multi-layer structure in which different materials are laminated, or a plate molded on a rigid flat plate It may be a shape.

According to Preston's equation, the polishing speed is proportional to not only the relative speed of the polishing member and the object to be polished but also the pressure at the contact surface between the object to be polished and the polishing member. Since the polishing rate is further proportional to the effective contact area, when the load per unit area is the same and the relative speed is the same, the polishing rate increases as the contact area increases. Here, the meaning of the effective contact area is effective because the contact state between the polishing member and the object to be polished is different between when the polishing member is not pressurized and when it is pressurized during polishing. May be incomplete, so the contact area during polishing is different from the value calculated simply from the drawing.
It means that it takes a certain value. With a non-foamed polishing pad, simply having a large contact area does not allow the polishing agent to be supplied to every corner of the contact surface, that is, the flowability of the polishing agent is low, so that the polishing rate cannot be increased. In order to supply the abrasive to all corners of the contact surface, the density of the grooves may be increased. However, simply increasing the density of the grooves and increasing the total area of the grooves is not very effective in improving the polishing rate. Since the sum of the total area of the groove and the contact area is equal to the area of the working surface of the polishing member, an increase in the total area of the groove decreases the contact area, and a decrease in the contact area decreases the polishing rate from the above discussion. It is. Therefore, even if the groove density is increased, if the total area of the groove is increased,
The effect of increasing the flowability of the abrasive, and thus the effect of increasing the polishing rate, will be offset. In order to increase the fluidity and not reduce the contact area, it is not enough that the groove density is high alone, and at the same time, the groove width must be reduced. By narrowing the width of the groove, reducing the pitch of the groove, and increasing the density of the groove, the abrasive is supplied to every corner of the contact surface,
The polishing rate is improved.

Here, what is important is the role of the groove. The grooves not only have the function of forming the convex portion of the polishing member, the function of supplying the abrasive to the convex portion, which is the contact surface, and the function of ensuring the fluidity of the abrasive, but also the abrasive grains in the polishing dust or the aggregated abrasive. This is an important function of discharging aggregated abrasive grains) therefrom. In that sense, the width of the surplus groove should not be too small. If it is too small, the polishing debris or agglomerated abrasive grains will be clogged in the groove while being discharged, so that the discharge of the polishing debris or the agglomerated abrasive grains to the outside of the processing surface of the polishing member will be impaired, and this will cause polishing. The reason for this is that the contact with the polishing object during the polishing may cause scratches.

For the above reasons, the pitch of the groove may not be too coarse or conversely fine, and the width of the groove may not be too wide or conversely narrow. Having.

In FIG. 1, the preferred range of the groove width (p−b) depends on the size of the polishing dust or agglomerated abrasive grains discharged therefrom.
m or more and 4.5 mm or less are preferable.

The pitch p of the grooves is determined by the bargain having mutually contradictory characteristics such as good flowability of the abrasive and a large contact area under the limitation of the width of the grooves limited as described above. As a result of an experiment, it is preferable that the distance be 0.1 mm or more and 5.0 mm or less. The length b of the upper side of the convex portion of the groove is preferably 0.0 mm or more and 3.0 mm or less.

Further, the length a of the bottom side of the projection and the length b of the top side thereof
It is preferable that a ≧ b, the length b of the upper side is b ≧ 0, and the length c of the bottom side of the concave portion is c ≧ 0. When b = 0, the upper side of the convex portion has an edge shape. However, in a polishing state in which the edge-shaped convex portion is pressed against the object to be polished, the edge portion is compressed and the object to be polished has a finite area. Since it comes into contact with an object, the effective contact area does not become zero even when b = 0. The lower limit of the depth d of the groove is determined by the dischargeability of polishing dust or agglomerated abrasive grains, and is preferably 0.1 mm or more.

FIG. 9 is an enlarged cross-sectional view of a concave / convex portion having a groove structure in a processing surface portion of a polishing member according to a second embodiment of the present invention. In the polishing member according to the second embodiment, the cross section of the concave portion (groove) is U-shaped, but the other portions are the same as the polishing member according to the first embodiment, and thus are the same as the polishing member according to the first embodiment. The description of the part is omitted. In the polishing member according to the second embodiment, e represents the length of the upper side of the convex portion, f represents the length of the upper side of the concave portion (groove), and g represents the depth of the groove. Here, it is preferable that the uneven portion has a periodic structure. In this case, p2 in FIG. 9 is the pitch of the periodic structure of the unevenness of the uneven portion (hereinafter, referred to as the pitch of the groove).

Similar to the polishing member according to the first embodiment,
In the polishing member according to the second embodiment, a preferable groove width f
The range depends on the size of abrasive dust or agglomerated abrasive grains discharged therefrom.
It is preferably from 05 mm to 4.5 mm.

The pitch p2 of the grooves is determined by the bargains having mutually contradictory characteristics such as good flowability of the abrasive and a large contact area under the above-mentioned limitation on the width of the grooves. As a result of an experiment, it is preferable that the distance be 0.1 mm or more and 5.0 mm or less. The length e of the upper side of the convex portion of the groove is preferably 0.0 mm or more and 3.0 mm or less.

When e = 0, the upper side of the convex portion has an edge shape. In a polishing state in which the edge-shaped convex portion is pressed against the object to be polished, the edge portion is compressed and has a finite area. Therefore, the effective contact area does not become zero even when e = 0. The lower limit of the depth g of the groove is determined by the dischargeability of polishing dust or agglomerated abrasive grains, and is preferably 0.1 mm or more.

In the second embodiment, a groove having a U-shaped cross section is formed in the processing surface of the polishing member. If the groove has a U-shape, the supply and discharge of the abrasive are performed. This is easy, and the angle between the processing surface of the polishing member and the groove can be made large, so that the occurrence of an acute portion generated on the processing surface of the polishing member can be suppressed. With these, it is possible to suppress the occurrence of scratches on the object to be polished.

In the polishing member according to the second embodiment, the recess (groove) formed on the processing surface of the polishing member has a U-shaped cross section. However, the polishing member has a shape other than the U-shape having a curvature. There may be.

In the polishing member according to the first and second embodiments, the shape of the groove is important in order to improve the polishing rate and to eliminate scratches. In addition, a pattern suitable for effectively discharging abrasive dust or aggregated abrasive grains is selected. The pattern is preferably one or a combination of two or more selected from the group of concentric, spiral, lattice, triangular lattice, and radial grooves. Of these, concentric and radial grooves are shown in FIG.
FIG. 7 shows a lattice-shaped groove, and FIG. 8 shows a triangular lattice-shaped groove.

As described above, the polishing rate is proportional to the contact area. However, contact between solids is generally a point. Since the non-foamed polishing member according to the present invention uses a hard material, the effective contact area is lower than a value simply calculated from the drawing, so that the polishing rate is lower than an expected value. There is. Some contrivance is required to make the entire convex portion conform to the object to be polished. For this purpose, the temperature dependence of the hardness of the resin of the polishing pad material is used. The hardness of the resin decreases with increasing temperature. By raising the temperature of the hardness of the polishing pad and controlling the temperature, the contact with the object to be polished is improved. FIG. 3 shows how the polymer material, which is the material of the polishing member according to the embodiment of the present invention, decreases in hardness as the temperature increases. As shown in FIG. 2, the polishing rate depends on the temperature, and the polishing rate increases as the temperature increases. Causes of this increase in polishing rate include:
In addition to increasing the effective (effective) contact area, there is an increase in the reactivity of the slurry.

One of the major features of the hard, non-foamed abrasive member is
One is to improve the flatness, that is, to eliminate the pattern steps efficiently.
And When the hardness of the polishing member decreases, the step is eliminated
Sex worsens. Below, the hardness of the polishing member and the step-elimination property
An experiment was conducted to examine the relationship. 4mm × 4 with 500nm thickness
1 μm thick silicon oxide (Si)
O _Two) Wafer on which film is formed and initial step is 500 nm
Is 700 n with a polishing member in which the hardness of the material is variously changed.
After polishing and removal, the Vickers of the material of the polishing member
Hardness is 1.5kg / mm^Two(1.5 × 10⁷Pa)
Top or compression Young's modulus is 25kg / mm^Two(2.5
× 10⁸Pa) In the above case, the residual step is reduced to 150 nm or less.
I found that it can be down.

From this, Vickers hardness 1.5 kg
/ Mm ² (1.5 × 10 ⁷ Pa) or more, or a compression Young's modulus of 25 kg / mm ² (2.5 × 10 ⁸ Pa) or more, and the highest if the polishing is performed at the highest temperature. Both a polishing rate and good flatness can be obtained.

The above-mentioned polishing pad makes holes at appropriate locations in the groove structure shown in FIGS. 6, 7 and 8, and transmits measurement light in order to optically measure the polishing state during polishing in situ. Measurement window may be provided at one or more locations. It is also possible to apply a hard coat on the surface of the measuring window on the side of the object to be polished to prevent scratching when the polishing head comes into contact, and to apply an anti-reflection film on the opposite surface. preferable.
Further, when the polishing member of the present invention is attached to, for example, a conventional polishing apparatus as shown in FIG. 5, a polishing apparatus having a high polishing rate, excellent step-elimination property and no scratches can be obtained.

FIG. 10 is a flowchart showing a semiconductor device manufacturing process. When the semiconductor device manufacturing process is started, first, in step S200, an appropriate processing step is selected from the following steps S201 to S204. According to the selection, the process proceeds to any of steps S201 to S204.

Step S201 is an oxidation step for oxidizing the surface of the silicon wafer. Step S202 is a CVD step of forming an insulating film on the surface of the silicon wafer by CVD or the like. Step S203 is an electrode forming step of forming electrodes on the silicon wafer by steps such as vapor deposition. Step S204 is an ion implantation step of implanting ions into the silicon wafer.

After the CVD step or the electrode forming step, the process proceeds to step S205. Step S205 is a CMP process. CMP
In the process, the polishing apparatus according to the present invention performs planarization of an interlayer insulating film, formation of a damascene by polishing a metal film on the surface of a semiconductor device, and the like.

After the CMP step or the oxidation step, step S
Continue to 206. Step S206 is a photolithography process. In the photolithography process, a resist is applied to a silicon wafer, a circuit pattern is printed on the silicon wafer by exposure using an exposure apparatus, and the exposed silicon wafer is developed. Further, the next step S207 is an etching step in which portions other than the developed resist image are etched away, and then the resist is peeled off to remove unnecessary resist after etching.

Next, in step S208, it is determined whether all necessary steps have been completed. If not, the process returns to step S200, and the previous steps are repeated to form a circuit pattern on the silicon wafer. If it is determined in step S208 that all steps have been completed, the process ends.

In the method of manufacturing a semiconductor device according to the present invention, since the polishing apparatus according to the present invention is used in the CMP process, efficient polishing can be performed with respect to the supply of the abrasive, and the polishing agent retainability and fluidity can be improved. Since the polishing property is high, the polishing rate is high, the generation of scratches on the silicon wafer is small, and the step-eliminating property is excellent. As a result, the yield in the CMP process is improved and the process efficiency is improved, so that there is an effect that a semiconductor device can be manufactured at a lower cost than a conventional semiconductor device manufacturing method.

The polishing apparatus according to the present invention may be used in a CMP step of a semiconductor device manufacturing process other than the above-described semiconductor device manufacturing process.

The semiconductor device according to the present invention is manufactured by the semiconductor device manufacturing method according to the present invention. Thus, there is an effect that the semiconductor device can be manufactured at a lower cost than the conventional semiconductor device manufacturing method, and the manufacturing cost of the semiconductor device can be reduced. [Embodiment 1] Epoxy resin having both spiral V-grooves (groove pitch: 0.5 mm, upper side length of convex portion: 0.15 mm) and radial concave grooves (5 ° intervals, 0.5 mm depth) Was fixed on an aluminum base plate of φ800 mm × 20 mmt, which was used as a polishing pad.

Next, an elastic film 13 (R201 made by Rodel Nitta) is attached to an aluminum ring 12 having an inner diameter of 145 mm.
The ring 12 was arranged via the O-rings 16 and 14 as shown in FIG. 4 to constitute the polishing head shown in FIG. Reference numeral 15 denotes a retainer ring, which is the object 4 to be polished.
This is a ring for preventing the protrusion of the ball. 17 is an object to be polished 4
Is a hermetic space kept at a positive pressure to pressurize the air, and compressed gas is supplied from 18 and 19 to give a positive pressure.
The airtight space 17 and the elastic film 13 allow the polishing head to be pressurized independently of the entire system including the retainer ring 15.

The thermal oxide film of SiO ₂ is 1 μm on the elastic film 13.
The formed 6-inch silicon wafer was fixed with surface tension and polished under the following processing conditions.

Processing conditions Polishing pad rotation speed: 50 rpm Polishing head rotation speed: 50 rpm Oscillation distance: 30 mm Oscillation frequency: 15 reciprocations / minute Abrasives: SEMI Supers25 manufactured by Cabot Corp. diluted twice Agent flow rate: 50 ml / min Load on wafer: 400 g / cm ² (3.9 × 10 ⁴ Pa) The temperature of the platen, and thus the temperature of the polishing pad, was maintained at 50 ° C.

As a result of polishing under the above conditions, a polishing rate of 200 nm / min was obtained. Also, 4 nm thick 500 nm
1 μm thick silicon oxide (
An SiO ₂ ) film was formed, and the wafer having an initial step of 500 nm was polished and removed by a thickness of 700 nm. The residual step was 100 nm or less, which was good. In addition, no scratch was generated. [Comparative Example 1] When the temperature of the polishing pad was set to room temperature, the residual step was as good as 100 nm or less as in the example, but the polishing rate was reduced to 150 nm / min. There were no scratches. Comparative Example 2 Polishing was performed using the same polishing pad as in Example 1 except that the length of the upper side of the convex portion of the groove was increased to 0.35 mm, and the temperature of the polishing pad was set to 50 ° C. The polishing rate was reduced from 200 nm / min of Example 1 to 180 nm / min. It is considered that the fluidity of the abrasive was reduced. There were no scratches.

[0056]

As described above, according to the present invention, the polishing can be performed with the same efficiency as the conventional foaming polishing pad with respect to the supply amount of the abrasive, and the fluidity of the abrasive and the size of the contact area can be increased. The polishing rate is optimized because of the optimized polishing rate, and because it is a hard pad, it has excellent elimination of steps for patterned wafers. It is possible to provide a polishing member capable of smoothly discharging the agglomerates of the agent and having no scratches, and a polishing method and a polishing apparatus using the same.

Further, the present invention provides a semiconductor device manufacturing method capable of manufacturing a semiconductor device at a lower cost as compared with a conventional semiconductor device manufacturing method by reducing the cost of the polishing step and improving the process efficiency. And a low-cost semiconductor device can be provided.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a cross-sectional structure of a groove structure according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a relationship between a polishing rate and a temperature.

FIG. 3 is a diagram illustrating a relationship between hardness and temperature of a polishing member.

FIG. 4 is a view of a polishing head used in the present invention.

FIG. 5 is a view showing a conventional example of a CMP polishing apparatus.

FIG. 6 shows a plan view of a groove structure of a combination of concentric and radial grooves of the polishing member of the present invention.

FIG. 7 shows a plan view of a groove structure of a grid-like groove of the polishing member of the present invention.

FIG. 8 is a plan view of a groove structure of a triangular lattice groove of the polishing member of the present invention.

FIG. 9 is a diagram illustrating a cross-sectional structure of a groove structure according to a second embodiment of the present invention.

FIG. 10 is a flowchart showing a semiconductor device manufacturing process.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 CMP apparatus 2 Polishing member (polishing pad) 3 Polishing object holding part (polishing head) 4 Polishing target (wafer) 5 Polishing agent supply part 6 Polishing agent 7 Surface plate 10 Polishing body 11 Polishing target holding part (polishing head) 12) Aluminum ring 13 Elastic film 14 O-ring 15 Retainer ring 16 O-ring 17 Airtight space 18 High-pressure gas inlet hole 19 High-pressure gas inlet hole 20 Convex portion 21 Concave portion (groove)

Continued on the front page (72) Inventor Takashi Arai 3-2-2, Marunouchi, Chiyoda-ku, Tokyo Nikon Corporation (72) Inventor Akira Miyachi 3-2-2, Marunouchi, Chiyoda-ku, Tokyo Nikon Corporation F term (reference) 3C058 AA07 AA09 BC02 CB01 DA17

Claims (15)

[Claims] 1. A polishing apparatus for polishing an object to be polished by relatively moving the polishing member and the object to be polished in a state in which an abrasive is interposed between the polishing member and the object to be polished. In the polishing member, at least a processing surface portion of the polishing member is made of a non-foamed resin and has a plurality of concave and convex portions having a groove structure, and the groove structure has a concentric shape, a spiral shape, a lattice shape, a triangular lattice shape. A polishing member comprising one or a combination of two or more selected from a group of radial grooves. 2. The polishing method according to claim 1, wherein a cross section of the concave portion (groove portion) and the convex portion of the concave and convex portion has at least one shape selected from a rectangle, a trapezoid, and a triangle. Element. 3. The shape of the rectangle, the trapezoid, or the triangle satisfies the following condition.
The polishing member according to the above. a ≧ b, b ≧ 0, c ≧ 0 (where a is the length of the bottom of the protrusion, b is the length of the top of the protrusion, and c is the length of the bottom of the recess.) 4. The rectangular, trapezoidal or triangular shape satisfies the following condition.
The polishing member according to the above. 0.0mm ≦ b ≦ 3.0mm, 0.1mm ≦ a + c ≦
5.0 mm, d ≧ 0.1 mm (where d is the depth of the concave portion) 5. The polishing member according to claim 1, wherein a cross section of the concave portion (groove portion) of the concave and convex portion has a shape having a curved portion. 6. The polishing member according to claim 5, wherein the shape having the curved portion satisfies the following conditions. 0.0mm ≦ e ≦ 3.0mm, 0.1mm ≦ e + f ≦
5.0 mm, g ≧ 0.1 mm (where e is the length of the upper side of the convex portion, f is the length of the upper side of the concave portion, and g is the depth of the concave portion.) 7. The polishing member according to claim 1, wherein said uneven portion has a periodic structure of unevenness. 8. The non-foamed resin has a Vickers hardness of 1.5 kg / mm ² or more or a compression Young's modulus of 25 kg.
Claims 1-7 any one polishing member, wherein the filling of / mm ² or more. 9. A polishing method for polishing the object to be polished by relatively moving the polishing member and the object to be polished in a state where an abrasive is interposed between the polishing member and the object to be polished, A polishing method using the polishing member according to claim 1. 10. A step of controlling the temperature of the polishing member;
The polishing method according to claim 9, wherein including the step of polishing with said polishing member Vickers hardness 1.5 kg / mm ² or more or compressive Young's modulus 25 kg / mm ² or more fills conditions. 11. The polishing member according to claim 1, wherein the object to be polished is a wafer on which semiconductor devices are formed. 12. The object to be polished is a wafer on which semiconductor devices are formed.
The polishing method according to claim 1. 13. A polishing apparatus for polishing an object to be polished by relatively moving the polishing member and the object to be polished in a state in which an abrasive is interposed between the polishing member and the object to be polished, A polishing apparatus using the polishing member according to claim 1 as the polishing member. 14. A method for manufacturing a semiconductor device, comprising the step of flattening the surface of a semiconductor silicon wafer by using the polishing apparatus according to claim 13. 15. A semiconductor device manufactured by the semiconductor device manufacturing method according to claim 14.