JP2000349068A - Plasma processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a plasma processing apparatus which can prevent an inner surface of a container from wearing. SOLUTION: A limiting plate 91 is disposed between an inner wall of a processing chamber 31 and a microwave guide window 34, and the plate 91 is formed therein with an opening 81 through which the window 34 is exposed to the chamber 31. Consequently, a leakage electric field from the window 34 can advance into the chamber 31 via the opening 81 and generates a plasma in the chamber 31. Further, since the plasma is away from the inner wall of the chamber 31, the inner wall of the chamber 31 can be prevented from wearing. In addition, since a part of the window 34 opposed to the plate 91 is coated with a conductive FILM 96, unnecessary discharging between the window 34 and plate 91 can be avoided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for performing processing such as etching or ashing on a semiconductor substrate, a glass substrate for a liquid crystal display, or the like by using plasma generated by using microwaves.

[0002]

2. Description of the Related Art Plasma generated by giving energy to a reaction gas from the outside is widely used in a manufacturing process of an LSI or an LCD. In particular, the use of plasma has become an indispensable basic technology in the dry etching process. As the size of a substrate processed by the plasma increases, it is required to uniformly generate the plasma over a wider area. For this reason, the applicant of the present application has disclosed Japanese Patent Application Laid-Open Nos. 62-5600 and
Japanese Patent Application Laid-Open No. 2-99481 proposes the following device.

FIG. 8 is a side sectional view showing a plasma processing apparatus 200 of the same type as the apparatus disclosed in Japanese Patent Application Laid-Open Nos. 62-5600 and 62-99481, and FIG. 200 is a plan view of FIG.

A rectangular box-shaped reactor 31 is entirely formed of aluminum. A microwave introduction window 34 is disposed above the reactor 31, and the upper portion of the reactor 31 is hermetically sealed by the microwave introduction window 34. The microwave introduction window 34 is formed of a dielectric material such as quartz glass or alumina, which has heat resistance and microwave permeability and has a small dielectric loss.

[0005] A rectangular box-shaped cover member 40 for covering the upper part of the reactor 31 is connected to the reactor 31. A dielectric line 41 is attached to a ceiling portion in the cover member 40. As shown in FIG. 9, the dielectric line 41 includes a dielectric such as a fluororesin (for example, Teflon: registered trademark), a polyethylene resin, or a polystyrene resin. It is formed into a plate shape provided with a convex portion. The convex portion of the dielectric line 41 is fitted inside a waveguide 51 connected to the peripheral surface of the cover member 40. The microwave oscillator 50 is connected to the waveguide 51, and the microwave oscillated by the microwave oscillator 50 is incident on the projection of the dielectric line 41 by the waveguide 51.

[0006] The inside of the reactor 31 is a processing chamber 32, and a required gas is introduced into the processing chamber 32 from a gas introduction pipe 35 fitted in a through hole penetrating the peripheral wall of the reactor 31. . At the center of the bottom wall of the reactor 31, there is provided a mounting table 33 for mounting the sample W. The mounting table 33 is connected to an RF power supply 37 of several hundred KHz to several tens of MHz via a matching box 36. I have. Further, an exhaust port 38 for discharging the inside air of the processing chamber 32 is provided on the bottom wall of the reactor 31.

In order to perform an etching process on the surface of the sample W using such a plasma processing apparatus 200, the exhaust port 3
After evacuating the inside of the processing chamber 32 to reduce the pressure inside the processing chamber 32 to a desired pressure, a reaction gas is supplied into the processing chamber 32 from the gas introduction pipe 35.

Next, a microwave is oscillated from a microwave oscillator 50 and introduced into a dielectric line 41 via a waveguide 51. As described above, the base end side of the convex portion of the dielectric line 41 is a taper 41a having a substantially triangular shape in plan view. Therefore, the microwave incident on the convex portion is spread in the width direction along the tapered portion 41 a and propagates throughout the dielectric line 41. This microwave is applied to the cover member 4
The incident wave and the reflected wave are reflected by the end face facing the 0-waveguide 51, and the standing wave is formed on the dielectric line 41 by superimposing the incident wave and the reflected wave. Due to this standing wave, a leaked electric field is formed below the dielectric line 41, and this is transmitted through the microwave introduction window 34 and introduced into the processing chamber 32. Thus, the microwave propagates into the processing chamber 32.

[0009] Microwaves propagated into the processing chamber 32 generate plasma in the processing chamber 32, and the plasma etches the surface of the sample W. by this,
Even if the diameter of the reactor 31 is increased in order to process a large-diameter sample W, microwaves can be uniformly introduced into the entire region of the reactor 31 and the large-diameter sample W can be relatively uniformly plasma-treated. Can be processed.

[0010]

However, in the conventional plasma processing apparatus 200, the plasma generated near the inner peripheral surface of the reactor 31 may sputter the inner peripheral surface of the reactor 31. Was. When the inner peripheral surface of the reactor 31 is sputtered, particles are generated thereby, and the particles W contaminate the sample W. Accordingly, a first object of the present invention is to provide a plasma processing apparatus capable of preventing the inner surface of a reactor from being worn.

Further, in the conventional plasma processing apparatus 200, in order to uniformly spread the microwave on the dielectric line 41, the tapered portion protruded horizontally from the microwave introduction window 34 and the edge of the reactor 31. 41a is provided, and the tapered portion 41a is set to a predetermined size according to the area of the dielectric line 41, that is, the diameter of the processing chamber 32. Therefore, when installing the conventional plasma processing apparatus 200, an extra horizontal space for storing the tapered portion 41a protruding from the peripheral edge of the reactor 31 must be secured.

By the way, as the diameter of the sample W increases, a plasma processing apparatus having a larger size of the reactor 31 is required. At this time, it is also required that the installation place of the apparatus need not be treated, that is, it can be installed in a space as narrow as possible. However, in the conventional apparatus, since the size of the tapered portion 41a is determined according to the diameter of the reactor 31, there is a problem that both of the above requirements cannot be satisfied.

Accordingly, a second object of the present invention is to provide a plasma processing apparatus which achieves the first object and can reduce the size of the entire apparatus as much as possible even if the diameter of the reactor is large. is there.

[0014]

When the microwave leaking from the microwave introduction window is introduced into the container provided with the microwave introduction window, the present inventor sets a microwave limiting member and a facing member. It has been found that by providing the microwave introduction window with a conductive coating at a position where the microwave is introduced, the generation of plasma near the inner peripheral surface of the container can be effectively suppressed.

Further, the microwave is supplied by an endless annular or endless annular waveguide type antenna provided with a slit for radiating the microwave facing the microwave introduction window, and the inside of the container is introduced through the microwave introduction window. It has been found that the plasma can be uniformly generated in the container even when the microwave is introduced into the container, that is, even when the microwave is not supplied at the center.

Based on these findings, the present invention has been made. In the first invention, a microwave is introduced into a reactor containing a sample through a microwave introduction window, and the reaction is performed by the microwave. A plasma processing apparatus for generating plasma in a vessel and performing plasma processing on the sample, wherein a conductive member is provided in proximity to the microwave introduction window, and the conductive member of the microwave introduction window is provided. The portion facing the conductive member is covered with a conductive film.

The second invention is the first invention, wherein the conductive member is interposed between the inner wall of the reactor and the microwave introduction window.

A third invention is the second invention, wherein the end of the conductive member opposite to the inner wall of the reactor is the microwave introduction window coated with the conductive film. It is characterized by being covered.

Preferably, the conductive member is a microwave limiting member, and a portion of the microwave introduction window facing the microwave limiting member is covered with the conductive coating.

Alternatively, preferably, the conductive member is a counter electrode, and a portion of the microwave introduction window facing the counter electrode is covered with the conductive film.

Alternatively, more preferably, the conductive film is formed of one or more of SiC, Si, C and Al.

[0022]

[Function] The conductive film coated on the microwave introduction window is
Discharge between the microwave introduction window and the conductive member facing the microwave introduction window is suppressed.

[0023]

Embodiments of the present invention will be specifically described below with reference to the drawings.

Embodiment 1 FIG. 1 is a side sectional view showing a structure of a plasma processing apparatus 101 according to Embodiment 1 of the present invention. The plasma processing apparatus 101 is different from the conventional plasma processing apparatus 200 shown in FIG.
It has the same configuration except that it is characteristically different in point. First, a conductive limiting plate 91 having an opening 81 intermittently appearing in a cross section is fitted into the reactor 31 close to the inner surface of the microwave introduction window 34. Second, on the side facing the conductive limiting plate 91, the conductive coating 96 is coated on the microwave introduction window 34 without covering the opening 81. Such a coating is, for example, 0.02 μm
Can be realized by using Cr as a base and laminating 2 μm of Al thereon. In addition to Al, it can be realized by one or more of SiC, Si, C and Al.

In the plasma processing apparatus 101, the electric field radiated below the dielectric line 41 is applied to the microwave introduction window 3
4 and is introduced into the processing chamber 32 to generate plasma in the processing chamber 32. However, by electrically grounding the limiting plate 91 via the reactor 31, it functions to selectively limit the position where microwaves are introduced into the processing chamber 2, and controls the position where plasma is generated. Can be. That is, the limiting plate 91 acts as a counter electrode of the mounting table 33 to which the high frequency is applied, and can improve the directivity of the plasma guided on the sample W. Further, the opening 81 can be isolated from the inner peripheral surface of the reactor 31, and the plasma prevents the inner peripheral surface of the reactor 31 from being worn. Therefore, the surface of the sample W on the mounting table 3 can be etched by the plasma with good directivity and without the inner peripheral surface of the reactor 31 being worn.

FIG. 2 is an enlarged sectional view showing the vicinity of a range P in FIG. Microscopically, the limited plate 91
And the microwave introduction window 34 may not always be in close contact with each other. In such a case, a potential difference is generated in the gap 89 between the two based on the strong electric field of the microwave leaking from the microwave introduction window 34, and unnecessary discharge may occur. Such unnecessary discharge causes adverse effects, for example, a decrease in an etching rate in etching a silicon oxide film and a decrease in a selectivity to a photoresist. However, the limited plate 91 of the microwave introduction window 34
Since the conductive film 96 is coated on the side opposite to the limiting plate 91, even if the gap 89 exists between the limiting plate 91 and the microwave introduction window 34, Unnecessary discharge at 89 can also be prevented.

FIG. 3 is a plan view illustrating the shape of the limiting plate 91. The position of the outer wall of the reactor 31 in which the limiting plate 91 is fitted is indicated by a broken line. White arrows indicate the propagation direction of the microwave propagating in the dielectric line 41. In this manner, a plurality of openings 81 extending in a direction substantially orthogonal to the propagation direction of the microwave propagating in the dielectric line 41 can be arranged along the above-described direction.

Of course, a high frequency may be applied to the mounting table 33 from the high frequency power supply 37 via the matching box 36 simultaneously with the oscillation by the microwave oscillator 50. By applying a high frequency to the mounting table 33, the surface of the sample W on the mounting table 33 can be etched while controlling ions in the plasma.

In this embodiment, the mode in which the limiting plate 91 is fitted inside the reaction chamber 31 is exemplified.
Is larger than the inner size of the reaction chamber 31, and the edge thereof is sandwiched between the reactor 31 and the microwave introduction window 34.

Embodiment 2 FIG. 4 is a side sectional view showing a structure of a plasma processing apparatus 102 according to Embodiment 2 of the present invention, and FIG. 5 is a plan view of the plasma processing apparatus 102 shown in FIG. is there. The entire bottomed cylindrical reactor 1 is formed of a conductive metal, and the reactor 1 is electrically grounded. The upper opening of the reactor 1 is hermetically sealed with a microwave introduction window 4. The microwave introduction window 4 is made of a dielectric material such as quartz glass or alumina, which has heat resistance and microwave permeability and has a small dielectric loss.

A cover member 10 formed by molding a conductive metal into a circular lid shape is externally fitted to the microwave introduction window 4, and the cover member 10 is fixed on the reactor 1. An antenna 11 for introducing microwaves into the reactor 1 is fixed on an upper surface of the cover member 10. The antenna 11 has an annular waveguide-type antenna portion 11a formed by molding a member having a U-shaped cross section into an endless annular shape, with its opening facing the cover member 10, and the central axis of the reactor 1 (not shown). ), And provided inside the inner peripheral surface of the reactor 1, and the annular waveguide antenna portion 1 of the cover member 10.
A plurality of slits 15 are formed in a portion facing 1a. That is, in the present embodiment, the annular waveguide-type antenna portion 11a and the portion of the cover member 10 in which the plurality of slits 15 are formed opposing the annular waveguide-type antenna portion 11a are formed. Type antenna is configured.

Around the opening provided on the outer peripheral surface of the annular waveguide type antenna portion 11a, the annular waveguide type antenna portion 11a is provided.
An introduction portion 11b for introducing microwaves is connected so as to be in a diameter direction of the annular waveguide type antenna portion 11a. A dielectric 14 made of fluororesin (for example, Teflon: registered trademark), polyethylene resin, polystyrene resin, or the like (preferably, Teflon) is fitted inside the introduction portion 11b and the annular waveguide antenna portion 11a.

A waveguide 29 extending from a microwave oscillator 30 is connected to the introduction portion 11b, and the microwave oscillated by the microwave oscillator 30 is transmitted to the introduction portion 11b of the antenna 11 via the waveguide 29. Incident. This incident wave is
It is introduced from the introduction part 11b to the annular waveguide antenna part 11a. The microwaves introduced into the annular waveguide antenna section 11a are converted into traveling waves traveling in the opposite directions in the annular waveguide antenna section 11a, and are transmitted through the dielectric 14 in the annular waveguide antenna section 11a. And the traveling waves are superimposed to generate a standing wave in the annular waveguide antenna section 11a. Due to the standing wave, a wall surface current having a maximum value flows through the inner surface of the annular waveguide type antenna portion 11a at predetermined intervals.

At this time, the mode of the microwave propagating in the annular waveguide type antenna portion 11a in which Teflon (registered trademark) having a dielectric constant ε of 2.1 is inserted is changed to a rectangular TE which is a basic propagation mode. _{In order} to set it to ₁₀ , the annular waveguide type antenna unit 11 is set in accordance with the microwave frequency of 2.45 GHz.
The dimension of a may be 27 mm in height and 66.2 mm in width. The microwave in this mode is applied to the dielectric 1 in the annular waveguide antenna 11a with almost no energy loss.
Propagate 4

Further, using the microwave introduction window 4 having a diameter of 380 mm, εr =
When Teflon (registered trademark) of 2.1 is internally fitted, the dimension from the center of the annular waveguide antenna section 11a to the center in the width direction of the annular waveguide antenna section 11a may be 141 mm. In this case, the annular waveguide antenna 11a
The circumferential length of a circle C connecting the centers in the width direction (approximately 886 m
m) is substantially an integral multiple of the wavelength (approximately 110 mm) of the microwave propagating in the annular waveguide antenna section 11a.
Therefore, the microwave is transmitted to the annular waveguide antenna 11a.
The standing wave described above resonates at high voltage / low current at the antinode position and low voltage / high current at the node position, and the Q value of the antenna is improved.

The plurality of slits 15 are located at substantially the center (nodes) between a plurality of regions (antinodes) of high electric field strength, and the microwaves radiated from each slit 15 pass through the microwave introduction window 4. And introduced into the reactor 1. Each slit 1
Since 5 is provided on the cover member 10 in a substantially radial manner, the microwave is uniformly introduced into the entire region in the reactor 1. On the other hand, as shown in FIG. 4, the antenna 11 is placed on a cover member 10 having the same diameter as the diameter of the reactor 1.
Is provided without projecting from the periphery of the reactor 1
Is large, the size of the plasma processing apparatus is as small as possible, so that it can be installed in a small space.

At the center of the bottom wall of the reactor 1, there is provided a mounting table 3 for mounting the sample W, and a high frequency power supply 7 is connected to the mounting table 3 via a matching box 6. A through hole is formed in the peripheral wall of the reactor 1 so as to penetrate the peripheral wall. A gas introduction pipe 5 for introducing a reaction gas into the processing chamber 2 is fitted into the through hole. Further, an exhaust port 8 for discharging the inside air of the processing chamber 2 is provided in a bottom wall of the processing chamber 2.

[0038] In opposition to the inner surface of the microwave introduction window 4,
The introduction region where the microwaves are introduced into the processing chamber 2 is
A limiting plate 92 that is limited to the central portion is disposed in the vicinity of the microwave introduction window 4. The limiting plate 92 is formed by shaping a conductive plate into an annular shape.
Is fixedly held between the outer peripheral edge portion and the outer peripheral edge portion. The limiting plate 92 surrounds the center of the opening 82 exposing the microwave introduction window 4 into the reaction chamber 1 at the center. The inner peripheral edge of the limiting plate 92 is provided with the plurality of slits 1 described above.
The annular waveguide-type antenna portion 5a is opposed to an appropriate position near an end on the outer peripheral surface side. In addition, limited plate 9
2 is electrically grounded. Of course, similarly to the first embodiment, a mode in which the limiting plate 92 is fitted inside the reaction chamber 1 can be adopted.

On the other hand, on the side of the microwave introduction window 4 that faces the limiting plate 92, a conductive coating 97 is coated so as to face the limiting plate 92. When the range P ′ is enlarged, the reference numerals 34, 81, 91, and 96 are replaced with reference numerals 4, 82, and 9 in the range P shown in FIG.
2,97.

In order to perform an etching process on the surface of the sample W using such a plasma processing apparatus 102, the exhaust port 8
And the inside of the processing chamber 2 is depressurized to a desired pressure.
A reaction gas is supplied from the gas introduction pipe 5 into the processing chamber 2. Next, a microwave of 2.45 GHz is oscillated from the microwave oscillator 30, and the oscillated microwave is transmitted through the waveguide 31 to the antenna 1.
1 to form a standing wave in the annular waveguide antenna section 11a. The electric field radiated from the plurality of slits 15 of the annular waveguide antenna section 11a is
And is introduced into the reactor 1 to generate plasma in the processing chamber 2. The surface of the sample W on the mounting table 3 is etched by this plasma.

A high frequency may be applied to the mounting table 3 from the high frequency power supply 7 via the matching box 6 simultaneously with the oscillation by the microwave oscillator 30. By applying a high frequency to the mounting table 3, the surface of the sample W on the mounting table 3 can be etched while controlling ions in the plasma.

At this time, since the annular limiting plate 92 that is electrically grounded is disposed close to the microwave introduction window 4, the microwave is transmitted through the opening 8 of the limiting plate 92.
2 where a plasma is generated. As a result, the position where the plasma is generated can be isolated from the inner peripheral surface of the reactor 1, and the plasma can be separated from the reactor 1 by the plasma.
Is prevented from being worn. On the other hand, the electrically grounded limiting plate 92 acts as a counter electrode of the mounting table 3 to which the high frequency is applied, so that the directivity of the plasma guided on the sample W can be improved. Moreover, in the same manner as described in the first embodiment, even if the gap 89 exists between the microwave introduction window 4 and the limiting plate 92, unnecessary discharge can be prevented.

In addition, since the annular waveguide type antenna portion 11a is employed and microwaves are introduced into the processing chamber 2 through the microwave introduction window 4 from now on, even if the diameter of the reactor 1 is large, The overall size of the plasma processing apparatus 102 can be reduced as much as possible. Therefore, the invention according to the present embodiment can achieve not only the first object but also the second object.

In the present embodiment, the plurality of slits 15 are provided so as to be orthogonal to the traveling direction of the microwave propagating in the annular waveguide antenna 11a.
The present invention is not limited to this, and a slit may be opened so as to obliquely intersect the traveling direction of the microwave, or may be opened in the traveling direction of the microwave. The wavelength of the microwave propagating in the antenna 11 changes due to the plasma generated in the reactor 1, and the position where the maximum value of the current flowing through the peripheral wall of the annular waveguide antenna unit 11 a changes. In some cases, in a slit opened diagonally in the traveling direction of the microwave or a slit opened in the traveling direction of the microwave, the change in the position showing the maximum value of the current can be captured in the slit area. .

The annular waveguide type antenna portion 11a may be hollow without inserting the dielectric material 14. But,
When the dielectric 14 is inserted into the annular waveguide antenna 11a, the wavelength of the microwave incident on the annular waveguide antenna 11a is 1 / √ (ε) by the dielectric 14.
r) times (εr is the relative dielectric constant of the dielectric). Therefore, when the annular waveguide type antenna portion 11a having the same diameter is used, when the dielectric 14 is inserted, the dielectric 14
The annular waveguide antenna unit 1
There are many positions where the current flowing through the wall of 1a is maximum, and a plurality of slits 15 can be opened correspondingly. Therefore, the microwave can be more uniformly introduced into the processing chamber 2.

Third Embodiment FIG. 6 is a side sectional view showing a structure of a plasma processing apparatus 103 according to a third embodiment of the present invention, and FIG. 7 is an enlarged view of the vicinity of a range Q shown in FIG. It is sectional drawing. Note that, in both figures, portions corresponding to the portions described above are denoted by the same reference numerals, and description thereof is omitted.

The plasma processing apparatus 103 is different from the plasma processing apparatus 102 in that the annular projection 4a is provided on the surface of the microwave introduction window 4 on the processing chamber 2 side and the outer peripheral surface of the annular projection 4a is covered. In that a conductive film 98 is provided. The outer periphery of the annular protrusion 4a covers the inner periphery of the limiting plate 92, and the inner periphery surrounds the recess 4b. Here, the thickness dimension of the limiting plate 92 and the annular projection 4
The height of “a” is set to be substantially the same. In addition, the conductive coating 98 is interposed not only on the microwave introducing window 4 facing the upper surface of the limiting plate 92 but also on the outer peripheral surface of the annular convex portion 4a between the limiting plate 92 and the microwave introducing window 4.

In such a plasma processing apparatus,
As in the second embodiment, the limiting plate 92 prevents the inner surface of the reactor 1 from being worn. On the other hand, the limited plate 92
Is also covered with the annular convex portion 4a of the microwave introduction window 4, so that the inner peripheral end of the limiting plate 92 is also isolated from the plasma, thereby preventing the plasma from being worn. Therefore, generation of particles due to wear of the limiting plate 92 is suppressed.

Moreover, unnecessary discharge between the outer peripheral surface of the annular convex portion 4a and the inner peripheral end of the limiting plate 92 can be prevented.
Therefore, the invention according to the present embodiment can also achieve both the first and second objects.

[0050]

According to the plasma processing apparatus of the first invention, unnecessary discharge can be prevented while improving the directivity of generated plasma.

According to the plasma processing apparatus of the second aspect, unnecessary wear of the inner wall of the processing chamber can be prevented, generation of particles is prevented, and contamination of the sample is avoided.

According to the plasma processing apparatus of the third aspect, the conductive member itself can be prevented from being worn.

[Brief description of the drawings]

FIG. 1 is a side sectional view showing a structure of a plasma processing apparatus 101 according to a first embodiment of the present invention.

FIG. 2 is an enlarged sectional view showing the vicinity of a range P in FIG.

FIG. 3 is a plan view illustrating the shape of a limiting plate 91;

FIG. 4 is a side sectional view showing a structure of a plasma processing apparatus 102 according to a second embodiment of the present invention.

FIG. 5 is a plan view of the plasma processing apparatus 102.

FIG. 6 is a side sectional view showing a structure of a plasma processing apparatus 103 according to Embodiment 3 of the present invention.

FIG. 7 is an enlarged sectional view showing the vicinity of a range Q in FIG. 6;

FIG. 8 is a side sectional view showing the structure of a conventional plasma processing apparatus 200.

FIG. 9 is a plan view of the plasma processing apparatus 200.

[Explanation of symbols]

1,31 processing room, 4,34 microwave introduction window, 9
1,92 limited plate, 96-98 conductive coating, 1
01 to 103 Plasma processing apparatus.

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K057 DA11 DA16 DA19 DD03 DD08 DK03 DM06 DM09 DM29 DN02 DN03 5F004 AA14 AA16 BA20 BB13 BB14 BB29 BD01 CA06 5F045 BB14 DP04 DQ05 EB03 EB13 EC05 EH02 EH03

Claims (6)

[Claims] 1. A plasma processing apparatus for introducing a microwave into a reactor containing a sample through a microwave introduction window, generating plasma in the reactor using the microwave, and performing a plasma process on the sample. Wherein a conductive member is provided in proximity to the microwave introduction window, and a portion of the microwave introduction window facing the conductive member is covered with a conductive coating. Plasma processing apparatus. 2. The plasma processing apparatus according to claim 1, wherein the conductive member is interposed between an inner wall of the reactor and the microwave introduction window. 3. The microwave introduction window covered with the conductive coating, wherein an end of the conductive member opposite to the inner wall of the reactor is covered with the microwave introduction window. Plasma processing equipment. 4. The conductive member is a microwave limiting member, and a portion of the microwave introduction window facing the microwave limiting member is covered with the conductive coating. The plasma processing apparatus according to any one of claims 1 to 3. 5. The method according to claim 1, wherein the conductive member is a counter electrode, and a portion of the microwave introduction window facing the counter electrode is covered with the conductive film. The plasma processing apparatus according to any one of the above. 6. The plasma processing apparatus according to claim 1, wherein the conductive film is formed of one or more of SiC, Si, C, and Al.