JP2000349024A - Manufacture of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a single-crystal semiconductor film over a large area, easily and at low costs by a method wherein a non-single-crystal insulating film on a substrate or an amorphous or polycrystal semiconductor film formed on a non-single-crystal insulating substrate is crystal-grown while the irregular generation of a nucleus is being suppressed to allow a controlled crystal as a seed to grow into a crystal. SOLUTION: An Ni film is vapor-deposited on the whole face by a sputtering method. After that, a linelike heater 5a is moved along a direction 7 to a seed-crystal formation region 8 through a constricted part 4 from a nucleus generation region 6. An exposed part is heated. A crystal nucleus which is generated in the nucleus generation region 6 passes the constricted part 4 so as to be grown. A single crystal which has a single crystal orientation is formed in the seed-crystal formation region 8. Then, a substrate 1 is heated. A linelike heater 5b is moved clockwise along a direction 9 at an angle 10 of, e.g. about 71 deg. with reference to the movement direction 7. The growth of a crystal in the transverse direction is continued with reference to an unexposed region in an amorphous Si film 2 from the end part of the seed-crystal formation region 8 while the single crystal in the seed-crystal formation region 8 is used as a seed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device formed on an insulating substrate, and more particularly, to a method for forming a non-single-crystal insulating film or a non-single-crystal insulating substrate formed on a substrate. A non-single-crystal semiconductor thin film such as amorphous or polycrystalline is formed, and energy such as heat, light, or charged particles is applied to the semiconductor thin film to form a large-area single-crystal thin film having a single crystal orientation. How to get.

[0002]

2. Description of the Related Art A method of crystallizing a non-single-crystal semiconductor film such as an amorphous or polycrystalline film to obtain a single-crystal film is extremely important, especially in the field of semiconductor integrated circuits and the like. Done and implemented.

For example, Japanese Patent Application Laid-Open No. 6-244103 discloses an amorphous Si film 18 formed on a substrate 16 with an SiO ₂ film 17 interposed therebetween, as shown in FIGS. 6 (a) and 6 (b). A film 19 of a catalyst material containing at least one of Ni, Fe, Co, and Pt is formed on the entire surface (in the case of FIG. 6A) or partially (in the case of FIG. 6B). A method of obtaining a crystalline Si film by performing an annealing process in this state has been proposed.

Japanese Patent Application Laid-Open No. 58-85519 discloses that an amorphous or polycrystalline semiconductor layer is formed on an insulating substrate 22 as shown in FIG. (A small region) 20 and a subsequent region 21 having a shape that expands at an angle, are patterned and then irradiated with thermal energy to give the small region 20 a seed crystal function. There has been proposed a method of single crystallizing the entire semiconductor layer. Small area 20 in this case
As the seed crystal, a method using a crystal nucleus naturally generated in the small region 20 and a method of placing a single crystal piece on the small region 20 are shown.

Further, in the method described in Japanese Patent Application Laid-Open No. 8-322466, a first semiconductor film formed on a substrate having an insulating surface is crystallized by applying energy, and then patterned to form a seed crystal. Is formed. Next, the seed crystal region is etched to leave a predetermined crystal plane, and a second semiconductor film is formed to cover the crystal plane. Further, energy is again applied to the second semiconductor film to cause the seed crystal to grow from the seed crystal in the second semiconductor film.

On the other hand, J. A. Appl. Phys. Vol.
73, No. 12, pp. In 8279 to 8289, the state of Si crystal grains grown from amorphous Si is described as follows. When an amorphous Si film to which Ni is added is grown in a solid phase, the {111} plane is likely to become a growth surface. FIG. 5 shows the amorphous Si film 1 in the amorphous Si film 14.
The crystal grains 15a with the <100> axis standing in the direction perpendicular to the upper surface 14a and the lower surface 14b (hereinafter, collectively referred to as the "film surface") of 4, and the <110> axis standing in the direction perpendicular to the film surface The crystal grains 15b in the state and <11 in the direction perpendicular to the film surface.
1> shows a crystal grain 15c in a state where the axis is standing. Among them, in the crystal grain 15b in which the <110> axis stands in a direction perpendicular to the film surface, since four <111> directions exist in the in-plane direction of the amorphous Si film 14, {111}. Even if the growth surface advances in the crystal grain growth direction together with the solid phase growth, the crystal growth proceeds smoothly without hitting the upper surface 14a or the lower surface 14b of the amorphous Si film 14. Therefore, amorphous Si
The Si film obtained by the solid phase growth of the film 14 mainly includes crystal grains having a <110> axis perpendicular to the film surface and having a <111> axis in the film surface.

Further, according to Japanese Patent Application Laid-Open No. 10-64819, after an Si film 25 is formed on a substrate 23 via a base film 24 as shown in FIG. An SiO ₂ film 26 for a mask having a portion 27 is formed.
Then, the mask SiO ₂ film 2 including the opening 27 is formed.
6, an acetic acid solution film 28 containing Ni as a metal element having a function of promoting crystallization of the Si film 25.
Is applied. Then, Ni is passed through the opening 27 to form Si.
It is introduced into the film 25. Then, the crystallization of the Si film 25 is advanced in the direction indicated by the arrow 29 using the introduced Ni.

At this time, Pd, instead of Ni, is used as a metal element to be introduced into the Si film 25 to promote crystallization.
Even if Pt, Cu, Au, or the like is used, the crystal growth of the Si film 25 proceeds in the <111> axis direction, and the <11>
1) It is taught that the axis is parallel to the film plane.

[0009]

An amorphous or polycrystalline non-single-crystal semiconductor thin film is formed on a non-single-crystal insulating film formed on a substrate or on a non-single-crystal insulating substrate. In the step of single-crystallizing the semiconductor film by applying energy such as heat, light, and charged particles, it is necessary to suppress irregular nucleation and grow a crystal using a controlled crystal nucleus as a large area. Is important in obtaining a single crystal thin film of

In order to crystallize a non-single-crystal thin film formed on a non-single-crystal insulating film on a single-crystal substrate, a part of the non-single-crystal insulating film is opened to expose the single-crystal substrate. By using a crystal substrate as a seed, it is possible to control the crystal growth direction of the non-single-crystal thin film to a direction that facilitates crystal growth. However, when using a non-single-crystal insulating substrate, it is usually difficult to control the crystal orientation.

In the method disclosed in the above-mentioned Japanese Patent Application Laid-Open No. 6-244103, the catalyst material
In the case where the entirety is formed on the i-thin film 18 (see FIG. 6A), nucleation of crystal growth occurs irregularly over the entire surface of the non-single-crystal Si thin film 18, and a large single-crystal region is formed. It is difficult to obtain, and crystal grains exceeding the order of μm cannot be obtained. On the other hand, in the method disclosed in the above publication, when the catalyst material film 19 is formed only on a part of the non-single-crystal Si thin film 18 as shown in FIG. The crystal growth proceeds toward the non-performed region. However, since nuclei are generated irregularly in the region where the catalyst material film 19 is formed, larger crystal grains and single crystal regions can be obtained than in the method of FIG. It is on the order of μm.

In the method described in the above-mentioned JP-A-58-85519, in which a crystal nucleus generated in the small region 20 is grown as a seed (see FIG. 7), a single crystal piece is used as a seed crystal. If not, the orientation of crystal nuclei generated in the small region 20 is irregular, so that a crystal having an orientation that facilitates crystal growth does not always grow. In a crystal having an orientation in which crystal growth is difficult, a crystal in another orientation grows immediately and is likely to be polycrystalline. When a single crystal piece is used as a seed in the crystal growth method of the above-mentioned symbol publication, a single crystal piece as a seed crystal for solid phase growth is attached to the small region 20 in FIG. The bonding interface with the semiconductor film to be
It must be clean at the atomic level. However, it is difficult to form and maintain this clean interface.

In the method described in Japanese Patent Application Laid-Open No. HEI 8-322466, a small area 2 similar to that shown in FIG.
Forming a single crystal region as a seed at 0, patterning the single crystal region to a minute size, then forming another film,
The film is grown from the patterned fine single crystal region. This complicates the process.

Also, as described above, J.I. Appl. Phys
s. , Vol. 73, No. 12, pp. 8279-8
289 describes a Si crystal growth method using a Ni catalyst. In the method described here, the orientation perpendicular to the film surface is aligned with the <110> axis, but the <111> direction in the plane is
It is oriented in a random direction with the <110> axis perpendicular to the film surface as the center of rotation.

According to the method described in Japanese Patent Application Laid-Open No. H10-64819, as described above with reference to FIG.
A metal element (for example, Ni) is introduced into a part of the crystal 5 and the crystal is grown by heat treatment. By forming the opening 27 in a stripe shape, the <111> axis is almost aligned in the direction 29 perpendicular to the stripe. Can be.

However, since crystal nuclei are randomly generated in a region corresponding to the stripe-shaped opening 27, the crystal orientations of crystal grains adjacent to this region do not completely match. Therefore, what is obtained is not a single crystal film when viewed in a large area, but only a collection of crystal grains having a uniform orientation.

The present invention has been made to solve the above problems, and has as its object to provide a non-single-crystal insulating film formed on a substrate or an amorphous film formed on a non-single-crystal insulating substrate. Alternatively, a single-crystal semiconductor film can be formed easily and inexpensively over a large area by growing a polycrystalline semiconductor film as a seed with controlled crystal nuclei while suppressing irregular nucleation. An object of the present invention is to provide a method for manufacturing a semiconductor device, which obtains a film.

[0018]

According to a method of manufacturing a semiconductor device of the present invention, a substrate having an insulating surface is provided on the insulating surface.
Forming an amorphous or polycrystalline semiconductor film, forming an insulating film on the semiconductor film, removing a part of the insulating film to expose a part of the semiconductor film; Removing a part of the exposed portion of the semiconductor film to form a constricted portion in the exposed portion, and separating the exposed portion into a nucleation region and a seed crystal forming region by the constricted portion; A step of growing a single crystal in the seed crystal forming region by applying a first local energy to the exposed portion, wherein the first heating region formed by the first local energy application is: Along the first direction, the nucleus is moved from the nucleation region through the constricted portion to the seed crystal formation region in the exposed portion, and among the crystal nuclei generated in the nucleation region, The seed crystal formed by passing through the neck portion and growing as a seed crystal A step of growing the single crystal in a region and a step of growing a single crystal in a non-exposed portion of the semiconductor film by applying a second local energy to the semiconductor film, A second heating region formed by application of local energy is formed in the semiconductor film along the second direction different from the first direction from the seed crystal forming region to the non-exposed portion. Moving the single crystal formed in the seed crystal forming region as a seed crystal to grow the single crystal in the non-exposed portion, thereby obtaining a single crystal semiconductor film. ,
Thereby, the above-mentioned object is achieved.

Before the step of growing a single crystal in the seed crystal forming region, the seed film forming region of the semiconductor film is
The method may further include a step of adding at least one element of e, Co, Ni, Cu, Ge, Pd, and Au.

For example, the semiconductor film is a Si film.

In one embodiment, the second direction makes an angle of about 71 degrees or 109 degrees with the first direction.

Preferably, a width of the constricted portion in a direction perpendicular to a crystal growth direction is in a range of 0.1 μm to 10 μm.

[0023] The step of growing a single crystal in the non-exposed portion may include a step of heating the entire substrate to a temperature lower than the temperature of the second heating region.

The present invention has been studied by the present inventors in order to easily obtain large crystal grains or single crystal regions, and to obtain a large area single crystal thin film having a single crystal orientation. It was found as a result of That is, a crystal nucleus that is irregularly generated in the seed region is made a certain controlled crystal nucleus, and the crystal growth that occurs using the crystal nucleus as a seed has a certain regularity, whereby the seed whose crystal orientation is controlled can be obtained. It has been found that the above-mentioned problems of the prior art can be solved by forming a crystal region and growing the crystal again using the seed crystal region as a seed.

The operation of the present invention will be described below.

According to the method of the present invention, when the semiconductor film on the non-single-crystal insulating substrate is crystallized, or when the semiconductor film provided on the non-single-crystal insulating film In the case where the single crystal insulating film is opened and the single crystal substrate is crystallized without being used as seeds for crystal growth, growth of crystal nuclei having an irregular orientation is suppressed, and crystal nuclei having an orientation in which crystal growth mainly proceeds are seeded. Thus, a large-area single-crystal thin film having a single crystal orientation can be obtained by controlling the crystal growth as follows.

More specifically, a part of the exposed portion of the semiconductor film is removed to form a constricted portion, and the region heated by the application of energy is passed through the constricted portion from the nucleus generation side of the constricted portion to be opposite to the constricted portion. To the side, that is, to the seed crystal forming region. This prevents irregularly occurring crystal grains from colliding with each other and hindering each other's crystal growth,
Among the crystal nuclei generated in the nucleus generation region, a single crystal can be formed in the seed crystal formation region by using the crystal nuclei grown through the constricted portion as seeds. Then, a large-area single-crystal thin film having a single crystal orientation is obtained by moving the heating area by applying energy again from the seed crystal forming area to the non-exposed part of the large-area semiconductor film. Can be.

[0028]

According to the present invention, a semiconductor film such as amorphous or polycrystalline Si is formed on a SiO ₂ film or a SiN film formed on the surface of a quartz substrate, a glass substrate, or a Si substrate. Is formed, and a SiO ₂ film or a SiN film is formed so that the semiconductor film is partially exposed. On the partially exposed semiconductor film, Fe, Co, Ni, Cu, Ge,
After adding at least one element of Pd and Au, a part of the exposed portion of the semiconductor film is removed by etching to form a “constricted portion” having a width of 0.1 μm to 10 μm. Here, the “constricted portion” in the specification of the present application refers to a portion having a shape in which the width in the direction perpendicular to the crystal growth direction is smaller than the width of an adjacent portion in the exposed portion of the semiconductor film. . The exposed portion of the semiconductor film is separated by the constriction into two regions, a “nucleation region” and a “seed crystal formation region” (preferably, the nucleation region has a smaller area). The crystal nuclei generated in the nucleation region pass through the constriction and grow to the seed crystal formation region.

The length of the constricted portion in the crystal growth direction may be appropriately selected between 0.5 μm and 100 μm according to the width of the constricted portion. If the width is smaller than 0.1 μm, the crystal nuclei generated in the nucleation region of the exposed portion will not pass through the constricted portion and will not grow to the seed crystal formation region. Conversely, when the width of the constricted portion is larger than 10 μm, a plurality of crystal nuclei generated in the nucleus generation region pass through the constricted portion and grow to the seed crystal forming region, so that a single crystal grain cannot be obtained. .

Next, a line heater, light shaped in a line, charged particles shaped in a line, and a point light scanned at a high speed in a line, and a point charged particle beam is scanned in a line at a high speed. The energy is applied to a predetermined region of the exposed portion of the semiconductor film by using, for example, a substrate.
At this time, a local region where energy is applied and the temperature rises as a result is referred to as a “heating region”. The heating region is slowly moved from the nucleation region through the constriction to the seed crystal forming region to form a single crystal in the seed crystal forming region.

Next, the heating region is moved from the seed crystal forming region to the non-exposed portion of the semiconductor film, and the non-exposed portion of the semiconductor film is grown using the single crystal of the seed crystal forming region as a seed.

The movement of the heating region with respect to the non-exposed portion of the semiconductor film is performed along a direction rotated by about 71 degrees or 109 degrees with respect to the direction in which energy was applied to the exposed portion. The above elements (Fe, Co, Ni, C
u, Ge, Pd, or Au),
The {110} plane mainly grows in the direction parallel to the film surface, and the crystal growth easily proceeds mainly in the <111> direction within the film surface. Was found to be effective in forming a single-crystal thin film. There are two <111> directions in the {110} plane, and the angle between them is approximately 71 degrees or 109 degrees by vector calculation. Therefore, two crystal growth steps are performed, first, the crystal is grown along one <111> direction, and then the other <111> direction at an angle of 71 degrees or 109 degrees with respect to this growth direction. The crystal growth can be performed in both of the two <111> directions in which the crystal growth mainly proceeds.

In the crystal growth step, the temperature of the semiconductor film in the heating region where energy is locally applied and heated is preferably in the range of 400 to 700 ° C.
When the temperature of the heating region is 400 ° C. or lower, crystal growth hardly occurs in the semiconductor film. On the other hand, if the temperature of the semiconductor film in the heating region exceeds 700 ° C., warpage due to thermal distortion of the substrate occurs, which is not preferable. If necessary, the entire substrate can be heated to a temperature lower than the temperature of the heating region, and even when the temperature of the heating region exceeds 700 ° C., the occurrence of warpage due to thermal distortion of the substrate can be suppressed. However, if the temperature of the entire substrate is increased until the warpage is completely eliminated, irregular nuclei are generated even in regions other than the heated region, and a large single-crystal thin film may not be obtained. Therefore, for example, when a Si substrate is used, the substrate temperature is preferably set to 400 ° C. or lower.

Hereinafter, some preferred embodiments of the present invention will be specifically described with reference to the drawings.

(First Embodiment) FIGS. 1A and 1B
1 is a perspective view illustrating a device configuration for explaining an embodiment of the present invention.

First, as shown in FIG.
By the method D, an amorphous Si film 2 having a thickness of 100 nm is formed on the quartz substrate 1 using Si ₂ H ₆ gas. next,
SiH ₄ is formed on the amorphous Si film 2 by atmospheric pressure CVD.
SiO ₂ film 3 having a thickness of 100 nm using a gas and an O ₂ gas
To form Thereafter, a part of the SiO ₂ film 3 is subjected to reactive ion etching (RIE) to remove CF ₄ gas and CH
An opening is formed by etching using F ₃ gas and amorphous S
A part of the surface of the i-film 2 is exposed. This exposed part is RI
Patterning using CF ₄ gas and O ₂ gas with E, width 1
A constricted portion 4 of μm is formed. Here, the smaller area of the exposed portion separated by the constricted portion 4 is referred to as a nucleation region 6 and the other is referred to as a seed crystal forming region 8.

After a Ni film (thickness: 1 nm; not shown) is deposited on the entire surface by sputtering, a linear heater 5 a is passed from the nucleation region 6 to the seed crystal formation region 8 through the constriction 4.
The exposed part is heated by moving it along direction 7 at a speed of 1 cm / hour. The temperature of the heating region in the exposed portion of the semiconductor film is set to 600 ° C. By this heat treatment, the crystal nuclei generated in the nucleus generating region 6 grow through the constricted portion 4 and a single crystal having a single crystal orientation is formed in the seed crystal forming region 8.

Next, the substrate 1 is heated to 400 ° C. as a whole and, as shown in FIG. The linear heater 5b is moved from the end of the seed crystal forming region 8 over the non-exposed portion of the amorphous Si film 2 at a speed of 1 cm / hour along the non-exposed portion. The lateral crystal growth using the single crystal of the crystal forming region 8 as a seed is continued.

As a result of the above-described process, a large-area single-crystal thin film having a single crystal orientation is obtained.

(Second Embodiment) FIGS. 2A and 2B
Are each for describing another embodiment of the present invention,
FIG. 2 is a perspective view illustrating a device configuration. The same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted here.

In this embodiment, as shown in FIG. 2A, the linear heater 5a is moved along the direction 11 on the exposed portion of the amorphous Si film 2 so that the linear heater 5a A single crystal region having a single crystal orientation is formed. Thereafter, as shown in FIG. 2B, the linear heater 5b is moved to the end of the seed crystal forming region 8 along a direction 12 which forms an angle 13 of approximately 109 ° clockwise with respect to the moving direction 11 thereof. From the non-exposed portion of the amorphous Si film 2 at a speed of 1 cm / hour, a large-area single-crystal thin film having a single crystal orientation can be obtained. At this time, the entire substrate 1 is heated to 400 ° C. as in the first embodiment.

In the above two embodiments, the Ni film is deposited to a thickness of 1 nm on the exposed portion of the amorphous Si film 2 by the sputtering method. However, instead of the Ni film, a 100 ppm nickel sulfate aqueous solution is used. , The same result was obtained.

(Comparative Example) FIGS. 3A and 3B are diagrams for explaining single crystallization performed when no constriction is provided in an exposed portion of the amorphous Si film 2 for comparison. FIG. 2 is a perspective view showing a device configuration. The same components as those in the first or second embodiment are denoted by the same reference numerals, and description thereof is omitted here.

As in the first embodiment, as shown in FIG. 3A, a part of the surface of the amorphous Si film 2 is exposed, and the exposed part is patterned. However, no constriction was provided. Further, a Ni film is vapor-deposited to a thickness of 1 nm on the entire surface by a sputtering method, and the linear heater 5a is moved along the direction 7 on the exposed portion of the amorphous Si film 2 to perform lateral crystal growth. Was. However, in this comparative example, the irregular crystal nuclei generated at the start point of the energy applying step grew in the moving direction 7 of the linear heater 5a, and a single crystal region was not obtained.

Subsequently, as shown in FIG. 3 (b), the linear heater 5b is moved in the clockwise direction 9 at an angle of approximately 71 degrees with the direction 7, and the exposed portion is further laterally grown. I let it. However, even with this method, only a polycrystal was further grown, and a large-area single-crystal thin film was not obtained at all.

In this comparative example, as in the first embodiment, the temperature of the heating region of the amorphous Si film 2 is 60 degrees.
The temperature was set to 0 ° C., and the entire substrate 1 was heated to 400 ° C.

According to the above-described experimental example for comparison, it has been confirmed that the provision of the constricted portion 4 in the amorphous Si film 2 is extremely effective for manufacturing the large-area single-crystal thin film of the present invention.

In the preferred embodiment described above (see FIGS. 1A and 1B and FIGS. 2A and 2B), the substrate 1
Although a quartz substrate was used as the substrate, a substrate formed by forming a SiO ₂ film or a SiN film on a Si substrate or a glass substrate may be used. Further, the semiconductor film 2 is exemplified by a Si film, but may be a SiGe film, a GaAs film, an InP film, or the like.

The addition of Ni is not limited to the above-described deposition of a Ni film or the application of a nickel sulfate solution, but may be another method such as application of a solution of another nickel salt, sputtering, ion implantation, or CVD. .

Further, FIGS. 1A and 1B and FIG.
The shape of the constricted portion 4 shown in (a) and (b) is a shape that gradually becomes narrower from the nucleation region 6 to the constricted portion 4, but as shown in FIG. However, the shape may be substantially a right angle. Alternatively, if the constricted portion 4, that is, the exposed portion of the semiconductor film has a portion 4 having a shape in which the width in the direction perpendicular to the crystal growth direction is smaller than the width of the portion adjacent to the crystal growth direction, It may be shaped.

In the crystal growth step, irradiation with lamp light or laser light may be used instead of the heaters 5a and 5b as energy applying means. In that case, the semiconductor film to be crystallized (for example, Si
The higher the output of light having a wavelength easily absorbed by the film, the better the crystallization efficiency.

In the above description of the specific embodiment, the moving direction (first moving direction) 7 or 11 of the linear heater (energy applying means) 5a is
The moving direction (second moving direction) 9 or 12 of the linear heater (energy applying means) 5b is changed clockwise by about 7
The direction is rotated by 1 degree or about 109 degrees,
The direction rotated counterclockwise by the above angle may be used.

[0053]

As described above, according to the present invention, a non-single-crystal insulating film formed on a single-crystal substrate, or a non-crystalline or polycrystalline non-crystalline film formed on a non-single-crystal insulating substrate. In the step of crystallizing a single-crystal thin film, the growth of crystal nuclei having an irregular orientation can be suppressed, and the crystal growth can be controlled so that the crystal nuclei having the orientation in which crystal growth mainly proceeds are used as seeds. A large-area single-crystal thin film having the above crystal orientation can be easily and inexpensively obtained.

Such a thin film forming method is applicable to various ICs, liquid crystal devices and the like. For example, it is useful in manufacturing a liquid crystal display device using a TFT (thin film transistor), and can provide a large-area liquid crystal panel with high performance and high reliability at low cost.

[Brief description of the drawings]

FIGS. 1A and 1B are perspective views showing a device configuration for explaining an embodiment of the present invention.

FIGS. 2A and 2B are perspective views showing a device configuration for explaining another embodiment of the present invention.

FIGS. 3A and 3B are perspective views showing a device configuration for explaining a comparative example in which a constricted portion is not formed in an amorphous Si film, which was performed for comparison with the embodiment of the present invention. FIG.

FIG. 4 is a diagram showing an example of a constricted shape.

FIG. 5 is a diagram showing a crystal orientation of a crystal nucleus surrounded by a <111> plane in an amorphous Si film.

FIGS. 6A and 6B are perspective views showing a device configuration for explaining a conventional method.

FIG. 7 is a perspective view showing a device configuration for explaining another conventional technique.

FIG. 8 is a perspective view showing a device configuration for explaining still another conventional technique.

[Explanation of symbols]

1 substrate 2 amorphous Si film 3 SiO ₂ film 4 neck portion 5a, the direction of movement of 5b linear heater 6 nucleus generation region 7,11 linear heater moving direction 8 or crystal formation region 9,12 linear heater 10 first The angle between the first growth direction and the second growth direction (about 71 °) 13 the angle between the first growth direction and the second growth direction (about 109 °) 14 the amorphous Si films 15a, 15b, 15c Crystal grain 16 Substrate 17 SiO ₂ film 18 Amorphous Si film 19 Film of catalyst material 20 Small region 21 Region 22 Insulating substrate 23 Substrate 24 Base film 25 Si film 26 SiO ₂ film for mask 27 Opening 28 Ni was contained. Acetic acid solution film 29 Direction of crystallization

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Toshio Mizuki 22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka F-term (reference) 5F052 AA02 AA11 AA14 AA24 BA01 BA07 CA04 CA10 DA02 DA05 DA06 DA10 DB02 EA02 FA03 FA06 FA19 FA24 GA02 GB03 GB11 JA01 5F110 AA28 BB01 DD02 DD03 DD05 DD13 DD14 GG02 GG12 GG33 GG47 PP02 PP03 PP05 PP06 PP10 PP23 PP34 PP36 QQ04

Claims (6)

[Claims] A step of forming an amorphous or polycrystalline semiconductor film on the insulating surface of a substrate having an insulating surface; a step of forming an insulating film on the semiconductor film; Removing a part of the semiconductor film to expose a part of the semiconductor film; and removing a part of the exposed part of the semiconductor film to form a constricted part on the exposed part. Separating a nucleation region and a seed crystal forming region by a portion; and applying a first local energy to the exposed portion to grow a single crystal in the seed crystal forming region. A first heating region formed by the first local energy application is formed along the first direction from the nucleation region through the constriction to the seed crystal formation region. In the nucleation region, and A step of crystal-growing the single crystal in the seed crystal forming region using the crystal grains grown through the constriction as a seed crystal, and applying a second local energy to the semiconductor film, A step of growing a single crystal on the exposed portion, wherein a second heating region formed by application of the second local energy is formed along a second direction different from the first direction, Moving the inside of the semiconductor film from the seed crystal forming region to the non-exposed portion to grow the single crystal in the non-exposed portion using the single crystal formed in the seed crystal forming region as a seed crystal And a method for manufacturing a semiconductor device, thereby obtaining a single crystal semiconductor film. 2. The method according to claim 1, wherein at least one of Fe, Co, Ni, Cu, Ge, Pd, and Au is formed in the seed crystal forming region of the semiconductor film before the step of growing a single crystal in the seed crystal forming region. The method of manufacturing a semiconductor device according to claim 1, further comprising a step of adding an element. 3. The semiconductor device according to claim 1, wherein said semiconductor film is a Si film.
Alternatively, the method for manufacturing a semiconductor device according to 2. 4. The method according to claim 1, wherein the second direction forms an angle of about 71 degrees or 109 degrees with the first direction. 5. The method according to claim 1, wherein a width of the constricted portion in a direction perpendicular to a crystal growth direction is in a range of 0.1 μm to 10 μm. 6. The method according to claim 1, wherein the step of growing a single crystal on the unexposed portion includes a step of heating the entire substrate to a temperature lower than a temperature of the second heating region.
The method for manufacturing a semiconductor device according to any one of the above.