JP2000343704A - Liquid ejecting head, head cartridge, liquid ejecting device, and production of the liquid ejecting head - Google Patents

Abstract

PROBLEM TO BE SOLVED: To facilitate positioning of an element substrate and a top plate for improving the yield in production at the time of bonding the element substrate and the top plate for electrically connecting functional elements or electric circuits of the element substrate and the top plate with each other. SOLUTION: On a top plate 3, a gold bump 95 is formed on the surface of a contact pad for connection 18 electrically connected with a functional element or an electric circuit of the top plate 3. A heat generating member and a contact pad for connection 14 are formed on an element substrate 1 for providing a recess electrode part 94 with a recess part 93, comprising a wall part 92 formed around the contact pad for connection 14, the contact pad 14 for connection 14, and an Au film on the surface of the contact pad for connection 14. At the time of bonding the element substrate 1 and the top plate 3, the gold bump 95 is introduced into the recess part 93. By melting the Au film on the contact pad for connection 14 and the gold bump 95, a bonding operation is executed, utilizing the metal eutectic between the gold bump 95 and the Au film.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid discharge head used for a printer as an output terminal of a copying machine, a facsimile, a word processor, a host computer or the like, a video printer, and a liquid discharge apparatus having the liquid discharge head. In particular, a liquid ejection head having an element substrate on which an electrothermal transducer that generates thermal energy used as energy for ejecting a liquid for recording, a head cartridge having the liquid ejection head, a liquid ejection device, and The present invention relates to a method for manufacturing the liquid ejection head. That is, the present invention relates to a liquid ejection head used in a liquid ejection recording apparatus that performs recording by ejecting a liquid such as recording ink or the like as flying droplets from an ejection port (orifice) and attaching the liquid to a recording medium.

[0002]

2. Description of the Related Art A liquid discharge apparatus, particularly an ink jet recording apparatus, has been strongly demanded in modern business offices and other office processing departments where quietness is required as non-impact recording, while at the same time high density and high speed. It has been developed and improved in that recording is possible, and that maintenance is relatively easy or maintenance-free.

[0003] Among such ink jet recording apparatuses, an ink jet recording apparatus disclosed in Japanese Patent Application Laid-Open No. 54-59936 has a nozzle having an orifice for discharging small droplets of a recording medium in a predetermined direction. And means for supplying a recording medium into the nozzles, and means for generating heat conversion energy. In the inkjet recording apparatus, high-speed recording at a high density is sufficiently possible due to its structural characteristics, and a recording head having a nozzle array having substantially the same width as the entire width of the recording medium, that is, a so-called full line recording head is designed and designed. Very easy to manufacture. Therefore, such a recording head and an ink jet recording apparatus are eagerly desired.

Further, as a conventional ink jet head, that is, a conventional liquid discharge head, Japanese Patent Publication No. 62-4
As described in Japanese Patent No. 8585, there is a multi-value output color inkjet head in which a plurality of heating elements are provided in a nozzle. The multi-value output color inkjet head is configured such that, for example, n heating elements are provided in a nozzle, and each heating element is individually connected to a drive driver, so that the heating elements can be driven independently. Further, the sizes of the heating elements are different so that the heating values of the heating elements are different in one nozzle. At this time,
The recording dots of the n heating elements are different from each other, and 組_み合_わせ_n C <sub>n−1
+ N C n-2 + ···</sub> + n C 2 + n C 1 +1} it is possible to form the recording dot of the street. That is, with one nozzle, ｛
_n C _n-1 + _n C _n-2 +... + _n C ₂ + _n C ₁ +1} gradation can be obtained.

Further, Japanese Patent Application Laid-Open No. H5-155037 describes a method in which the arrangement of the heating elements and the arrangement of the ink flow paths are formed at a low density, and high-density recording is achieved by interlaced driving of the ink jet head. I have.

A conventional liquid discharge head generally includes an element substrate as a first substrate on which a plurality of heating elements such as electrothermal transducers are formed, and a ceiling as a second substrate joined to the element substrate. It is mainly composed of boards. A common liquid chamber and a plurality of liquid flow paths respectively communicating with the common liquid chamber are formed between the element substrate and the top plate. A heating element formed on the element substrate is arranged in each of the plurality of liquid flow paths.

[0007]

In the liquid discharge head composed of the element substrate on which the heating element is formed and the top plate joined to the element substrate as described above, the driving condition of the heating element is controlled. The liquid ejection head can be reduced in size by allocating a plurality of elements or electric circuits having different functions to an element substrate and a top plate in accordance with the functions. As described above, when the functional elements or electric circuits are distributed to the element substrate and the top plate, the element substrate and the top plate are securely connected to each other on the element substrate and the top plate. Need to be joined. As a specific method, a connection contact pad is formed on each of the element substrate and the top plate, and the element substrate and the top plate are connected in a state where the connection contact pads of the element substrate and the top plate are in contact with each other. There is a method of joining. Thereby, the functional elements or electric circuits of the element substrate and the top plate can be electrically connected to each other through the connection contact pads. When this method is used, in order to join the element substrate and the top plate in a state where the contact pads for connection of the element substrate and the top plate are in contact with each other and electrically connected, the element substrate and the top plate are connected to each other. Must be performed with a predetermined positional accuracy.

[0008] An object of the present invention is to control a driving condition of an energy conversion element by a plurality of elements or electric circuits having different functions, each of which is allocated to an element substrate and a top plate according to the function. When joining the element substrate and the top plate so that the functional elements or electric circuits of the element substrate and the top plate are electrically connected to each other with the head, the alignment between the element substrate and the top plate is easy. Another object of the present invention is to provide a liquid discharge head capable of improving the yield in manufacturing, a head cartridge and a liquid discharge device having the liquid discharge head, and a method of manufacturing a liquid discharge head.

[0009]

In order to achieve the above object, the present invention provides a plurality of discharge ports for discharging a liquid and a plurality of liquid flow paths which are joined to each other and communicate with the respective discharge ports. A first substrate and a second substrate for configuring, and a plurality of energy conversion elements disposed in each of the liquid flow paths to convert electric energy into discharge energy of liquid in the liquid flow paths; A plurality of elements or electric circuits having different functions for controlling driving conditions of the energy conversion element, wherein the first substrate and the second substrate have the elements or electric circuits corresponding to the functions. A liquid ejecting head that is divided into the first substrate and the second substrate, and the elements or electric circuits of the first and second substrates are electrically connected to one of the first substrate and the second substrate. Connect to A plurality of convex electrical connection portions for forming the first substrate and the second substrate when the first substrate and the second substrate are bonded to the other of the first substrate and the second substrate. And a plurality of concave electrical connection portions that are respectively engaged with the convex electrical connection portions and are electrically connected to the convex electrical connection portions.

In the above-described liquid discharge head, it is preferable that the convex electric connection portion and the concave electric connection portion are eutectic bonded. Specifically, the convex electric connection portion is a metal bump formed on an electrode provided on the one substrate, and, in the concave electric connection portion, a portion in contact with the convex electric connection portion. At least a part is a metal part, and the metal bump and the metal part are eutectic bonded.

Further, a side wall portion of the concave electric connection portion is constituted by a part of a liquid flow path forming member for forming the liquid flow path, and the concave electric connection portion forms the liquid flow path. For this reason, it is preferable that the liquid passage forming member is formed by removing a predetermined portion of the liquid passage forming member when removing a portion corresponding to the liquid passage.

Further, the material of the convex electric connection part and the material of at least a part of the concave electric connection part are gold,
An alloy containing any metal of copper, platinum, tungsten, aluminum, or ruthenium, or an alloy containing any metal of gold, copper, platinum, tungsten, aluminum, or ruthenium can be used.

Further, the first substrate and the second substrate are made of a silicon material, and the element or the electric circuit is formed on the first substrate and the second substrate by using a semiconductor wafer process technique. Is preferred.

Further, the energy conversion element generates air bubbles in the liquid by applying thermal energy to the liquid, and the liquid flow path is disposed in the liquid flow path so as to face the energy conversion element, and A movable member whose downstream end toward the outlet is a free end may be provided. A heating resistor element can be used as the energy conversion element.

In the invention as described above, a plurality of elements or electric circuits having different functions for controlling the driving conditions of the energy conversion element are respectively provided with the first or the second circuit in accordance with the function.
In the liquid discharge head divided into the first substrate and the second substrate, a plurality of convex electrical connection portions are formed on one of the first substrate and the second substrate, and the other substrate has
When the first and second substrates are joined together, the plurality of concave electrical connection portions that are respectively engaged with the plurality of convex electrical connection portions and are electrically connected to the convex electrical connection portions are formed. By engaging the convex electric connection portion and the concave electric connection portion, the first and second substrates can be positioned to some extent. Further, when the side wall constituting the side wall of the concave electrical connection is a hard side wall containing, for example, silicon, by performing eutectic bonding accompanied by melting between metals in the convex electrical connection and the concave electrical connection. The rigid side walls can improve the positional accuracy between the first substrate and the second substrate. Furthermore, the first and second substrates are provided with the convex electric connection portion and the concave electric connection portion, and the first substrate and the first substrate are connected to each other by using the eutectic junction between the convex electric connection portion and the concave electric connection portion. By bonding the two substrates, when wafers are used as the first and second substrates, bonding between the wafers becomes possible, and the yield in manufacturing the liquid discharge head is improved. As a result, the manufacturing cost of the liquid ejection head can be reduced. Further, the present invention provides a plurality of discharge ports for discharging liquid, a first substrate and a second substrate for forming a plurality of liquid flow paths which are connected to each other by being joined to each other, A plurality of energy conversion elements arranged in each of the liquid flow paths to convert electric energy into ejection energy of liquid in the liquid flow paths, and a function for controlling driving conditions of the energy conversion elements. A plurality of different elements or electric circuits, wherein the elements or electric circuits correspond to the first substrate and the second
The first substrate and the second substrate are used to electrically connect elements or electric circuits of the first and second substrates to each other. And each of the electrical connections,
The electrical connection of the first substrate and the electrical connection of the second substrate are eutectic bonded.

In the above invention, the first and second substrates are provided with an electric connection portion for electrically connecting the elements or electric circuits to each other, and the first and second substrates are electrically connected to each other. Since the connection portions are eutectic bonded, the first substrate and the second substrate can be bonded using the eutectic bonding. Thereby, the first and second
When a wafer is used as the substrate, bonding between the wafers becomes possible, and the yield in manufacturing the liquid discharge head is improved. As a result, the manufacturing cost of the liquid ejection head can be reduced. In this case, the first substrate and the second substrate
Preferably, the substrate has an engagement portion different from the electrical connection portion for engaging with each other. Furthermore, the head cartridge of the present invention includes the above-described liquid ejection head,
A liquid container for holding the liquid supplied to the liquid ejection head.

Further, a liquid discharge apparatus of the present invention includes the above liquid discharge head, and drive signal supply means for supplying a drive signal for discharging liquid from the liquid discharge head.

Further, a liquid discharge apparatus according to the present invention includes the above liquid discharge head, and a recording medium transport means for transporting a recording medium receiving the liquid discharged from the liquid discharge head.

The above-described liquid discharge apparatus performs recording by discharging liquid from the liquid discharge head and attaching the liquid to a recording medium.

Further, according to the method of manufacturing a liquid discharge head of the present invention, a plurality of discharge ports for discharging liquid and a plurality of liquid flow paths connected to the discharge ports by being joined to each other are formed. A first substrate and a second substrate; a plurality of energy conversion elements disposed in each of the liquid flow paths for converting electric energy into discharge energy of liquid in the liquid flow paths; A liquid having a plurality of elements or electric circuits having different functions for controlling driving conditions, wherein the elements or electric circuits are distributed to the first substrate and the second substrate according to their functions. A method of manufacturing a discharge head, wherein one of the first substrate and the second substrate is electrically connected to an element or an electric circuit of each of the first and second substrates. Forming a plurality of convex electrical connection portions for engaging the plurality of convex electrical connection portions with the other one of the first substrate and the second substrate. Forming a plurality of concave electrical connection portions electrically connected to the connection portion; and connecting the plurality of convex electrical connection portions when the first substrate and the second substrate are joined to each other. Engaging the plurality of concave electrical connections.

In the step of bonding the first substrate and the second substrate, the convex electric connection portion and the concave electric connection portion are eutectic bonded.

Further, the side wall portion of the concave electric connection portion is constituted by a part of a liquid flow path forming member for forming the liquid flow path, and When forming the liquid flow path by removing a portion corresponding to the flow path, by removing a predetermined part of the liquid flow path forming member together with a part corresponding to the liquid flow path, the concave electrical connection portion It is preferable that the step of forming the concave shape includes the step of forming the concave electric connection portion.

In the method of manufacturing a liquid discharge head according to the invention as described above, a plurality of elements or electric circuits having different functions for controlling the driving conditions of the energy conversion elements are respectively provided on the first substrate according to the functions. When manufacturing the liquid discharge head distributed to the substrate and the second substrate, the first
A plurality of convex electrical connection portions are formed on one of the substrate and the second substrate, and the other substrate is engaged with each of the plurality of convex electrical connection portions and electrically connected to the convex electrical connection portion. Forming a plurality of concave electrical connection portions connected to the first and second substrates so that the plurality of convex electrical connection portions engage with the corresponding plurality of concave electrical connection portions when the first and second substrates are joined. Thus, the first and second substrates can be positioned to some extent. Further, when the side wall constituting the side wall of the concave electrical connection is a hard side wall containing, for example, silicon, by performing eutectic bonding accompanied by melting between metals in the convex electrical connection and the concave electrical connection. The rigid side walls can improve the positional accuracy between the first substrate and the second substrate. Further, the first and second substrates are provided with the convex electric connection portion and the concave electric connection portion as described above,
By joining the first substrate and the second substrate by using the eutectic joining of the convex electric connection portion and the concave electric connection portion, when the wafer is used as the first and second substrates, And the yield at the time of manufacturing the liquid discharge head is improved. As a result, the manufacturing cost of the liquid ejection head can be reduced.

Further, according to the method of manufacturing a liquid discharge head of the present invention, a plurality of discharge ports for discharging liquid and a plurality of liquid flow paths connected to the discharge ports by being joined to each other are formed. A first substrate and a second substrate; a plurality of energy conversion elements disposed in each of the liquid flow paths for converting electric energy into discharge energy of liquid in the liquid flow paths; A liquid having a plurality of elements or electric circuits having different functions for controlling driving conditions, wherein the elements or electric circuits are distributed to the first substrate and the second substrate according to their functions. A method for manufacturing a discharge head, wherein a plurality of the first substrates provided with a first electric connection portion for electrically connecting elements or electric circuits of the first and second substrates to each other are provided. Is A step of preparing a first silicon wafer and a second substrate provided with a second electric connection portion for electrically connecting elements or electric circuits of the first and second substrates to each other; Preparing a plurality of provided second silicon wafers; and connecting the first silicon wafer and the second silicon wafer to the first electrical connection portion and the first electrical connection portion corresponding to the first electrical connection portion. An abutting step in which the second electrical connection section is brought into contact with the second electrical connection section; and, after the abutment step, the second electrical section corresponding to the first electrical connection section and the first electrical connection section. The method includes a joining step of joining the connection portion by eutectic joining, and a cutting step of integrally cutting the joined first silicon wafer and the second silicon wafer after the joining step.

In the above invention, when the integrated first and second silicon wafers are cut, the first and second silicon wafers are formed by eutectic bonding of the first and second electric connection portions. Since the bonding of the wafers does not separate or shift, a plurality of liquid ejection heads (head chips) can be simultaneously manufactured with high yield. In such a manufacturing method, the number of times of alignment can be greatly reduced as compared with the case where the first substrate and the second substrate of each head are aligned for each head, so that productivity is further improved. .

In the method of manufacturing a liquid discharge head according to the invention described above, the first electric connection portion and the second electric connection portion are provided in plurality, respectively, and the first electric connection portion or the second electric connection portion is provided. It is preferable that one of the connection portions has a convex shape, and the other has a concave shape electrically connected to the electric connection portion having the convex shape.

The terms “upstream” and “downstream” used in the description of the present invention refer to the flow direction of a liquid from a liquid supply source to a discharge port via a bubble generation region (or a movable member), or in terms of this configuration. Is used as an expression for the direction of.

[0028]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, as one embodiment applicable to the present invention, a plurality of discharge ports for discharging liquid and a plurality of liquid flow paths which are connected to each other by being joined to each other are constituted. A first substrate and a second substrate, a plurality of energy conversion elements disposed in each liquid flow path for converting electric energy into a discharge energy of a liquid in the liquid flow path, and an energy conversion element. A plurality of elements or electric circuits having different functions for controlling the driving conditions of the first and second elements.
A description will be given of the liquid discharge head distributed to the first substrate and the second substrate.

FIG. 1 is a sectional view taken along the direction of a liquid flow path of a liquid discharge head according to an embodiment of the present invention.

As shown in FIG. 1, this liquid discharge head is provided with a plurality (only one is shown in FIG. 1) of heating elements 2 for providing thermal energy for generating bubbles in the liquid. An element substrate 1 which is a first substrate, a top plate 3 which is a second substrate joined on the element substrate 1, an orifice plate 4 joined to the front end surfaces of the element substrate 1 and the top plate 3, Liquid flow path 7 composed of substrate 1 and top plate 3
And a movable member 6 installed therein.

The element substrate 1 is formed by depositing a silicon oxide film or a silicon nitride film for insulation and heat storage on a substrate such as silicon, and patterning an electric resistance layer and wiring constituting the heating element 2 thereon. It was done. The heating element 2 generates heat by applying a voltage from the wiring to the electric resistance layer and passing a current through the electric resistance layer.

On the surface of the element substrate 1, there are provided a plurality of liquid flow paths 7 corresponding to the respective heating elements 2 and a member for forming a common liquid chamber 8 for supplying a liquid to each liquid flow path 7. A flow path side wall 9 extending between the heat generating elements 2 is provided on the surface. The element substrate 1 and members on the element substrate 1 are made of a silicon-based material.
After the pattern of the common liquid chamber 8 is formed by etching or a material for forming the channel side wall 9 such as silicon nitride and silicon oxide is deposited on a silicon substrate by a known film forming method such as CVD, the liquid channel 7 is formed. Portion can be formed by etching. The orifice plate 4 has a plurality of discharge ports 5 corresponding to the respective liquid channels 7 and communicating with the common liquid chamber 8 via the respective liquid channels 7. The orifice plate 4 is also made of a silicon-based material.
It is formed by cutting to a thickness of about m. The orifice plate 4 is not necessarily required for the present invention. Instead of providing the orifice plate 4, the orifice plate 4 is formed on the tip end surface of the element substrate 1 when the liquid flow path 7 is formed on the element substrate 1. By leaving the wall corresponding to the thickness and forming the discharge port 5 in this portion, the element substrate 1 with the discharge port is provided.
It can also be. Alternatively, when the liquid flow path 7 is formed in the top plate 3, a wall corresponding to the thickness of the orifice plate 4 is left on the distal end surface of the top plate 3, and the discharge port 5 is formed in this portion to provide a discharge port. It can also be a top plate.

The movable member 6 is provided on the heating element 2 such that the liquid path 7 is divided into a first liquid flow path 7 a communicating with the discharge port 5 and a second liquid flow path 7 b having the heating element 2. It is a cantilever-shaped thin film arranged facing each other, and is formed of a silicon-based material such as silicon nitride or silicon oxide.

The movable member 6 has a fulcrum 6a on the upstream side of a large flow flowing from the common liquid chamber 8 through the movable member 6 to the discharge port 5 by the liquid discharging operation, and has a fulcrum downstream from the fulcrum 6a. The heating element 2 is disposed at a position facing the heating element 2 at a predetermined distance from the heating element 2 so as to cover the heating element 2 so as to have the free end 6b. A space between the heating element 2 and the movable member 6 is a bubble generation area 10.

When the heating element 2 generates heat based on the above configuration, heat acts on the liquid in the bubble generation region 10 between the movable member 6 and the heating element 2, thereby causing a film boiling phenomenon on the heating element 2. Based bubbles are generated and grow. The pressure caused by the bubble growth acts on the movable member 6 preferentially, and as shown by the broken line in FIG.
Displace so that it opens greatly to the side. By the displacement or the displaced state of the movable member 6, the propagation of the pressure based on the generation of bubbles and the growth of the bubbles themselves are guided to the ejection port 5 side, and the
The liquid is discharged from.

That is, the liquid flow path 7 is
By providing the movable member 6 having the fulcrum 6a on the upstream side (the common liquid chamber 8 side) and the free end 6b on the downstream side (the discharge port 5 side) of the flow of the liquid in the inside, the pressure propagation direction of the bubble is downstream. And the pressure of the bubbles directly and efficiently contributes to the ejection. Then, the growth direction of the bubble itself is guided in the downstream direction similarly to the pressure propagation direction, and the bubble grows larger downstream than upstream. As described above, by controlling the growth direction itself of the bubble by the movable member and controlling the pressure propagation direction of the bubble, fundamental discharge characteristics such as discharge efficiency, discharge force, and discharge speed can be improved.

On the other hand, when the bubble enters the defoaming step, the bubble rapidly disappears due to a synergistic effect with the elastic force of the movable member 6, and the movable member 6 is finally moved to the initial position shown by the solid line in FIG. Return to. At this time, the liquid flows in from the upstream side, that is, the common liquid chamber 8 side, in order to supplement the contracted volume of the bubbles in the bubble generation region 10 and to supplement the volume of the discharged liquid,
The liquid flow path 7 is filled (refilled) with a liquid, and the liquid is refilled efficiently and rationally and stably with the return operation of the movable member 6.

The liquid discharge head of the present embodiment has circuits and elements for driving the heating element 2 and controlling the driving. These circuits and elements are assigned to the element substrate 1 or the top plate 3 according to their functions. Further, since the element substrate 1 and the top plate 3 are made of a silicon material, these circuits and elements can be easily and finely formed using a semiconductor wafer process technology.

The structure of the element substrate 1 formed by using the semiconductor wafer process technology will be described below.

FIG. 2 shows a liquid discharge head used in the liquid discharge head shown in FIG.
FIG. 2 is a cross-sectional view of an element substrate obtained. As shown in FIG.
In the element substrate 1 used for the liquid ejection head of the embodiment,
Is a thermal acid as a heat storage layer on the surface of the silicon substrate 301.
The oxide film 302 and the interlayer film 303 also serving as a heat storage layer
They are stacked in order. As the interlayer film 303, SiO
_TwoFilm or Si_ThreeN_FourA membrane is used. Interlayer film 303
Resistance layer 304 is formed partially on the surface of
The wiring 305 is partially formed on the surface of the wiring 4. wiring
As 305, Al or Al-Si, Al-Cu
Al alloy wiring is used. This wiring 305,
On the surfaces of the resistance layer 304 and the interlayer film 303, SiO_Twofilm
Or Si_ThreeN_FourA protective film 306 made of a film is formed.
You. Portion of the surface of the protective film 306 corresponding to the resistance layer 304
And the surroundings, the chemistry associated with the heating of the resistance layer 304
To protect the protective film 306 from mechanical and physical shocks
A cavitation film 307 is formed. Resistance layer 3
The area of the surface of the substrate 04 where the wiring 305 is not formed is
The heat acting portion 308, which is the portion where the heat of the anti-layer 304 acts,
is there.

The film on the element substrate 1 is sequentially formed on the surface of a silicon substrate 301 by a semiconductor manufacturing technique, and the silicon substrate 301 is provided with a heat acting portion 308.

FIG. 3 is a schematic cross-sectional view of the element substrate 1 shown in FIG.

As shown in FIG. 3, an N type well region 422 and a P
The mold well region 423 is partially provided. Then, the P-Mos 420 is added to the N-type well region 422 by the introduction and diffusion of impurities such as ion plating using a general Mos process.
Is provided with an N-Mos421. P-Mos42
0 denotes a source region 425 and a drain region 426 in which an N-type or P-type impurity is partially introduced into the surface layer of the N-type well region 422, and a source region 425 and a drain region 426 of the N-type well region 422. It is composed of a gate wiring 435 and the like deposited on the surface of the part except the gate insulating film 428 having a thickness of several hundreds of square meters. Also, N
-Mos 421 includes a source region 425 and a drain region 426 in which an N-type or P-type impurity is partially introduced into the surface layer of the P-type well region 423, and a source region 425 and a drain region 426 of the P-type well region 423.
Excluding the gate wiring 435 deposited on the surface of the gate insulating film 428 having a thickness of several hundreds of mm. The gate wiring 435 is made of polysilicon having a thickness of 4000 to 5000 nm deposited by the CVD method. These P-Mos420 and N-Mos42
1 constitutes a C-Mos logic.

The N-Mos 42 in the P-type well region 423
The portion different from 1 is an N-Mo for driving the electrothermal transducer.
An s transistor 430 is provided. The N-Mos transistor 430 also has a source region 432 and a drain region 431 partially provided in a surface layer of the P-type well region 423 by a process such as impurity introduction and diffusion, and a source region 432 and a drain of the P-type well region 423. The gate wiring 433 and the like are deposited on the surface of the portion excluding the region 431 via the gate insulating film 428.

In this embodiment, the N-mos transistor 430 is used as a transistor for driving the electrothermal transducer. However, the transistor has the ability to individually drive a plurality of electrothermal transducers and has the fine The transistor is not limited to this transistor as long as it can obtain a structure.

Between the P-Mos 420 and the N-Mos 421 and between the N-Mos 421 and the N-Mos transistor 43
5000Å10000Å between each element such as between 0 and
An oxide film isolation region 424 is formed by field oxidation having a thickness of .ANG .. Each element is isolated by the oxide film isolation region 424. The portion of the oxide film isolation region 424 corresponding to the heat acting portion 308 plays a role as a first heat storage layer 434 when viewed from the surface side of the silicon substrate 301.

On the surface of each element of P-Mos 420, N-Mos 421 and N-Mos transistor 430,
An interlayer insulating film 436 made of a PSG film or a BPSG film having a thickness of about 7,000 ° is formed by a CVD method.
After the interlayer insulating film 436 is planarized by heat treatment, the Al electrode 43 serving as a first wiring layer is formed through a contact hole penetrating the interlayer insulating film 436 and the gate insulating film 428.
7, wiring is performed. The surface of the interlayer insulating film 436 and the Al electrode 437 has a thickness of 10,000 to 150
An interlayer insulating film 438 made of a 00 ° SiO ₂ film is formed by a plasma CVD method. A portion of the surface of the interlayer insulating film 438 corresponding to the heat acting portion 308 and the N-Mos transistor 430 has a thickness of about 1000 Ｔ of TaN.
_A resistance layer 304 made of a _{0.8, hex} film is formed by a DC sputtering method. The resistance layer 304 includes an interlayer insulating film 438.
Drain region 431 via a through hole formed in
Is electrically connected to the Al electrode 437 in the vicinity of. On the surface of the resistance layer 304, an Al wiring 305 is formed as a second wiring layer serving as a wiring to each electrothermal conversion element.

The wire 305, the protective film 306 on the surface of the resistive layer 304 and the interlayer insulating film 438 is made of the Si ₃ N ₄ film having a thickness of 10000Å formed by a plasma CVD method. The anti-cavitation film 307 formed on the surface of the protective film 306 is made of a film such as Ta having a thickness of about 2500 °.

Next, a configuration for distributing circuits and elements to the element substrate 1 and the top plate 3 will be described.

FIGS. 4A and 4B are diagrams for explaining the circuit configuration of the liquid discharge head shown in FIG. 1, wherein FIG. 4A is a plan view of an element substrate, and FIG. 4B is a plan view of a top plate. It is. In addition,
FIGS. 4A and 4B show opposing surfaces.

As shown in FIG. 4A, in the element substrate 1, in addition to the grooves 3a and 3b forming the liquid flow path and the common liquid chamber as described above, a plurality of grooves arranged in parallel are formed. , A driver 11 for driving these heating elements 2 in accordance with image data, an image data transfer unit 12 for outputting input image data to the driver 11, and for controlling driving conditions of the heating elements 2. And a sensor 13 for measuring parameters necessary for the measurement.

The image data transfer section 12 is composed of a shift register for outputting serially input image data to each driver 11 in parallel, and a latch circuit for temporarily storing data output from the shift register. Note that the image data transfer unit 12 may output image data individually corresponding to each heating element 2, or may divide the arrangement of the heating elements 2 into a plurality of blocks and transfer the image data corresponding to each block. It may be output. In particular, by providing a plurality of shift registers for one head and distributing and inputting data from the printing apparatus to the plurality of shift registers, it is possible to easily cope with an increase in printing speed.

As the sensor 13, a temperature sensor for measuring the temperature near the heating element 2, a resistance sensor for monitoring the resistance value of the heating element 2, and the like are used.

When the ejection amount of the ejected droplet is considered, the ejection amount is mainly related to the foaming volume of the liquid. The foaming volume of the liquid changes depending on the temperature of the heating element 2 and its surroundings. Therefore, the temperature of the heating element 2 and the surrounding area is measured by a temperature sensor, and a pulse (pre-heat pulse) having a small energy that does not discharge the liquid is applied before applying the heat pulse for discharging the liquid according to the result. By changing the pulse width of the preheat pulse and the output timing thereof, the temperature of the heating element 2 and the surroundings thereof are adjusted to maintain a high image quality by discharging a constant droplet.

In consideration of the energy required for foaming the liquid in the heating element 2, if the heat radiation condition is constant, the energy is equal to the required energy per unit area of the heating element 2 and the heating element. It is expressed as the product of the area of 2. Thus, the voltage applied to both ends of the heating element 2, the current flowing through the heating element 2, and the pulse width may be set to values that can provide the necessary energy. Here, the voltage applied to the heating element 2 can be kept substantially constant by supplying the voltage from the power supply of the liquid ejection device main body. On the other hand, regarding the current flowing through the heating element 2,
The resistance value of the heating element 2 varies depending on the lot or the element substrate 1 due to a variation in the film thickness of the heating element 2 during the manufacturing process of the element substrate 1. Therefore, when the pulse width to be applied is constant and the resistance value of the heating element 2 is larger than the set value, the value of the flowing current becomes small, and the amount of energy supplied to the heating element 2 becomes insufficient. Cannot be foamed. Conversely, when the resistance value of the heating element 2 decreases, the current value becomes larger than the set value even when the same voltage is applied. In this case, excessive energy is generated by the heating element 2, which may lead to damage or short life of the heating element 2. Therefore,
The resistance value of the heating element 2 is constantly monitored by the resistance sensor,
There is also a method in which the power supply voltage and the heat pulse width are changed according to the values so that substantially constant energy is applied to the heating element 2.

On the other hand, as shown in FIG. 4B, the top plate 3 is provided with a sensor driving section 17 for driving the sensor 13 provided on the element substrate 1 and a sensor driving section for driving the sensor 13. A heating element control unit 16 that controls driving conditions of the heating element 2 based on the output result is provided. In order to supply liquid to the common liquid chamber from the outside, the top plate 3
The supply port 3c communicating with the common liquid chamber is open.

Further, the circuit and the like formed on the element substrate 1 and the circuit and the like formed on the top plate 3 are electrically connected to each other on the joint surfaces of the element substrate 1 and the top plate 3 facing each other. Connection contact pads 14 and 18 for connection are provided. The element substrate 1 is provided with an external contact pad 15 serving as an input terminal for an electric signal from the outside. The size of the element substrate 1 is larger than the size of the top plate 3, and the external contact pads 15
It is provided at a position exposed from the top plate 3 when the and the top plate 3 are joined.

Here, an example of a procedure for forming a circuit and the like on the element substrate 1 and the top plate 3 will be described.

As for the element substrate 1, first, circuits constituting the driver 11, the image data transfer section 12, and the sensor 13 are formed on a silicon substrate by using a semiconductor wafer process technique. Next, after the heating element 2 is formed as described above, the connection contact pads 14 and the external contact pads 15 are formed. Finally, as described above, the liquid flow path and the common liquid Grooves 3a and 3b constituting the chamber are formed.

As for the top plate 3, first, circuits constituting the heating element control section 16 and the sensor driving section 17 are formed on a silicon substrate by using a semiconductor wafer process technique. Next, as described above, the supply port 3c is formed by etching, and finally, the connection contact pad 18 is formed.
To form

When the element substrate 1 and the top plate 3 configured as described above are aligned and joined, the heating elements 2 are arranged corresponding to the respective liquid flow paths, and the connection pads 14 and Circuits and the like formed on the element substrate 1 and the top plate 3 are electrically connected via 18. For example, there is a method of making this electrical connection by mounting gold bumps or the like on the connection pads 14 and 18, but other methods may be used. in this way,
By electrically connecting the element substrate 1 and the top plate 3 by the connection contact pads 14 and 18, it is possible to simultaneously connect the element substrate 1 and the top plate 3 and at the same time, electrically connect the circuits described above. it can. After joining the element substrate 1 and the top plate 3, the orifice plate 4 is joined to the tip of the liquid flow path 7,
Thus, the liquid ejection head is completed.

As shown in FIG. 1, the liquid discharge head of the present embodiment has a movable member 6, and the movable member 6 is also formed with a circuit and the like on the element substrate as described above. Thereafter, it is formed on the element substrate 1 using a photolithography process. The step of forming the movable member 6 will be described later.

When the liquid discharge head obtained as described above is mounted on a head cartridge or a liquid discharge device, as shown in FIG. 5, it is fixed on a base substrate 22 on which a printed wiring board 23 is mounted. The liquid ejection head unit 20 is provided. In FIG. 5, the printed wiring board 23
Are provided with a plurality of wiring patterns 24 which are electrically connected to the head control unit of the liquid ejection device. These wiring patterns 24 are electrically connected to the external contact pads 15 via bonding wires 25. Since the external contact pads 15 are provided only on the element substrate 1, the electrical connection between the liquid discharge head 21 and the outside can be made in the same manner as the conventional liquid discharge head. Here, the example in which the external contact pads 15 are provided on the element substrate 1 has been described, but they may be provided only on the top plate 3 instead of the element substrate 1.

As described above, various circuits and the like for driving and controlling the heating element 2 are allocated to the element substrate 1 and the top plate 3 in consideration of the electrical connection between the two, and these circuits and the like are allocated. Is not concentrated on one substrate, so that the size of the liquid discharge head can be reduced. Further, by electrically connecting the circuits and the like provided on the element substrate 1 to the circuits and the like provided on the top plate 3 by the connection contact pads 14 and 18, the number of electrical connection portions to the outside of the head is reduced. In addition, it is possible to improve the reliability, reduce the number of parts, and further reduce the size of the head.

Further, by dispersing the above-described circuits and the like on the element substrate 1 and the top plate 3, the yield of the element substrate 1 can be improved, and as a result, the manufacturing cost of the liquid discharge head can be reduced. . Furthermore, since the element substrate 1 and the top plate 3 are made of a material based on the same material called silicon, the thermal expansion coefficients of the element substrate 1 and the top plate 3 are equal. As a result, even if the element substrate 1 and the top plate 3 are thermally expanded due to the driving of the heating element 2, no displacement occurs between them, and the positional accuracy between the heating element 2 and the liquid flow path 7 is maintained well.

In the present embodiment, the above-described circuits and the like are distributed according to their functions. The following is a description of the concept serving as a reference for this distribution.

A circuit corresponding to each heating element 2 by electric wiring connection individually or in units of blocks is formed on the element substrate 1.
In the example shown in FIG. 4, the driver 11 and the image data transfer unit 12 correspond to this. Since a drive signal is given to each heating element 2 in parallel, wiring must be routed by the amount of the signal. Therefore, when such a circuit is formed on the top plate 3, the number of connections between the element substrate 1 and the top plate 3 is increased, and the possibility of poor connection is increased. Poor connection between the body 2 and the circuit is prevented.

An analog part such as a control circuit is provided on a substrate on which the heating element 2 is not provided, that is, on a top plate 3 because it is easily affected by heat. In the example shown in FIG. 4, the heating element control unit 16 corresponds to this.

The sensor 13 may be provided on the element substrate 1 or the top plate 3 as necessary. For example, in the case of a resistance sensor, the resistance sensor is provided on the element substrate 1 because it is meaningless unless the sensor is provided on the element substrate 1 or the measurement accuracy decreases. In the case of a temperature sensor, it is preferable that the temperature sensor be provided on the element substrate 1 when detecting a temperature rise due to an abnormality in the heater drive circuit. If desired, it is preferable to provide it on the top plate 3 or on both the element substrate 1 and the top plate 3.

In addition, a circuit that does not correspond to each heating element 2 individually or in units of blocks by electric wiring connection, a circuit that does not necessarily need to be provided on the element substrate 1, Sensors and the like that do not affect are formed on the element substrate 1 or the top plate 3 as necessary so as not to concentrate on one of the element substrate 1 and the top plate 3. In the example shown in FIG. 4, the sensor drive unit 17 corresponds to this.

By providing each circuit, sensor, and the like on the element substrate 1 and the top plate 3 based on the above concept, while minimizing the number of electrical connections between the element substrate 1 and the top plate 3,
Each circuit, sensor, and the like can be distributed in a well-balanced manner.

The embodiments of the basic configuration of the present invention have been described above. Hereinafter, specific examples of the above-described circuits and the like will be described.

<Example of Controlling Energy Applied to Heating Element> FIG. 6 is a diagram showing a circuit configuration of an element substrate and a top plate in an example in which energy applied to a heating element is controlled according to a sensor output.

As shown in FIG. 6A, on the element substrate 31, heating elements 32 arranged in a line, a power transistor 41 functioning as a driver, and an AND circuit for controlling the driving of the power transistor 41 are provided. 39, a drive timing control logic circuit 38 for controlling the drive timing of the power transistor 41, and an image data transfer circuit 42 including a shift register and a latch circuit.
And a rank heater 43 for an ejection heater, which is also used as a sensor for detecting the resistance value of the heating element 32.

The drive timing control logic circuit 38
In order to reduce the power supply capacity of the device, all the heating elements 32
This is not for energizing at the same time, but for energizing the heating element 32 by dividing and driving the heating element 32 at different times. The enable signal for driving the drive timing control logic circuit 38 is an enable signal input terminal which is an external contact pad. Input is made from 45k to 45n.

The external contact pads provided on the element substrate 31 include an enable signal input terminal 45 k
To 45n, the input terminal 45 of the driving power source of the heating element 32.
a, a ground terminal 45b of the power transistor 41, input terminals 45c to 45e for signals necessary for controlling energy for driving the heating element 32, a drive power supply terminal 45f of a logic circuit, a ground terminal 45g, an image data transfer circuit 42
And a serial clock signal input terminal 45h synchronized with the input terminal 45h, and a latch clock signal input terminal 45j input to the latch circuit.

On the other hand, as shown in FIG.
A sensor drive circuit 47 for driving the rank heater 43, a drive signal control circuit 46 for monitoring the output from the rank heater 43 and controlling the energy applied to the heating element 32 according to the result, The resistance value data detected by the rank heater 43 or a code value ranked based on the resistance value, and each of the heating elements 32 measured in advance.
And a memory 49 that stores the liquid discharge amount characteristics (liquid discharge amount at a constant temperature and a predetermined pulse application) as head information and outputs the head information to the drive signal control circuit 46.

As connection contact pads, terminals 44 g, 44 h, and 4 connecting the rank heater 43 and the sensor drive circuit 47 are provided on the element substrate 31 and the top plate 32.
8g, 48h, input terminals 45c for signals necessary for controlling energy for driving the heating element 32 from outside
To connect the drive signal control circuit 46 to the drive signal control circuit 46.
Terminals 48a for inputting the outputs of the drive signal control circuit 46 to one input terminal of the AND circuit 39 are provided.

In the above configuration, first, the resistance value of the heating element 32 is detected by the rank heater 43, and the result is stored in the memory 43. The drive signal control circuit 46 determines rise data and fall data of the drive pulse of the heating element 32 according to the resistance value data and the liquid discharge amount characteristics stored in the memory 43, and outputs the AND circuit via the terminals 48a and 44a. Output to 39. On the other hand, the image data input serially is stored in the shift register of the image data transfer circuit 42, latched by the latch circuit in accordance with the latch signal, and transmitted to the A through the drive timing control circuit 38.
The signal is output to the ND circuit 39. Thus, the pulse width of the heat pulse is determined according to the rising data and the falling data, and the heating element 32 is energized with the pulse width. As a result, substantially constant energy is applied to the heating element 32.

In the above description, the rank heater 43 has been described as a resistance sensor. However, for example, a temperature sensor for detecting the temperature of the element substrate 31 or the degree of heat storage of the heating element 32 may be used. The preheat pulse width can also be controlled according to

In this case, after the power of the liquid discharge device is turned on, the drive signal control circuit 46 operates according to the previously measured liquid discharge amount characteristics and the temperature data detected by the rank heater 43. The preheat width of the heating element 32 is determined. The memory 49 stores selection data for selecting a preheat width corresponding to each heating element 32. When actually performing preheating, a preheating signal is selected according to the selection data stored in the memory 49. The heating element 32 is preheated accordingly. In this manner, the preheat pulse can be set and applied so that the discharge amount of the liquid is constant at each discharge port regardless of the temperature state. The selection data for determining the preheat width need only be stored once, for example, when the liquid ejection apparatus is started.

In the example shown in FIG. 6, an example in which one rank heater 43 is provided has been described. However, two sensors, a resistance sensor and a temperature sensor, are provided as sensors, and a heat pulse and a preheat By controlling both of the pulses, the image quality can be further improved.

The head information stored in the memory 49 includes, in addition to the above-described resistance value data of the heating element,
The type of the liquid to be ejected (when the liquid is ink, the color of the ink, etc.) can also be included. This is because the properties of the liquid are different depending on the type of liquid, and the ejection characteristics are different. The storage of the head information in the memory 49 may be performed in a non-volatile manner after the assembling of the liquid ejection head, or may be transferred from the apparatus side after the startup of the liquid ejection apparatus equipped with the liquid ejection head. May go.

Although the rank heater 43 is provided on the element substrate 31 in the example shown in FIG.
Is a temperature sensor, it may be provided on the top plate 33. The memory 49 may also be provided on the element substrate 31 instead of the top plate 33 if the space on the element substrate 31 side allows.

As described above, even if the driving of the heating element 32 is controlled to obtain a good image quality, bubbles are generated in the common liquid chamber and move into the liquid flow path together with the refilling of the liquid. This may cause a problem that the liquid is not discharged even though the liquid exists in the common liquid chamber.

To cope with this, a sensor for detecting the presence or absence of a liquid in each liquid flow path (particularly in the vicinity of the heating element 32) is provided, which will be described in detail later. A processing circuit for outputting the result to the outside when the absence is detected may be provided in the top plate 33. Then, if the liquid in the liquid discharge head is forcibly sucked from the discharge port on the liquid discharge device side based on the output from the processing circuit, the bubbles in the liquid flow path can be removed.
As the sensor for detecting the presence or absence of the liquid, a sensor that detects a change in resistance value through the liquid or a sensor that detects abnormal temperature rise of the heating element when no liquid is present can be used.

<Example of Controlling Temperature of Element Substrate> FIG.
FIG. 3 is a diagram illustrating a circuit configuration of an element substrate and a top plate in an example in which the temperature of the element substrate is controlled according to a sensor output.

In this example, as shown in FIG. 7A, the element substrate 51 is heated separately from the heating element 52 for discharging liquid to adjust the temperature of the element substrate 51. A heat retaining heater 55 and a power transistor 56 serving as a driver of the heat retaining heater 55 are added to the element substrate 31 shown in FIG. As the sensor 63, a temperature sensor for measuring the temperature of the element substrate 51 is used. On the other hand, as shown in FIG.
The top plate 53 has a sensor driving circuit 67 for driving the sensor 63 and a memory 6 for storing the liquid discharge amount characteristics.
In addition to 9, a heating heater control circuit 66 for monitoring the output from the sensor 63 and controlling the driving of the heating heater 55 in accordance with the result is formed. The heat retention heater control circuit 66 has a comparator, and compares a threshold value determined in advance based on the required temperature of the element substrate 51 with an output from the sensor 63, and the output from the sensor 63 is smaller than the threshold value. If it is larger, a heater control signal for driving the heater 55 is output. The above element substrate 51
Is a temperature at which the viscosity of the liquid in the liquid discharge head is in a stable discharge range.

The terminals 64a and 68a for inputting the heater control signal output from the heater controller 66 to the power transistor 56 for the heater formed on the element substrate 51 are used as connection contact pads. It is provided on the element substrate 51 and the top plate 53.
Other configurations are the same as those shown in FIG.

With the above configuration, the heat retaining heater 55 is driven by the heat retaining heater control circuit 66 in accordance with the output result of the sensor 63, and the temperature of the element substrate 51 is maintained at a predetermined temperature. As a result, the viscosity of the liquid in the liquid discharge head is maintained in a stable discharge range, and good discharge is possible.

The output value of the sensor 63 varies due to individual differences. In order to perform more accurate temperature adjustment, in order to correct this variation, a correction value for the variation in the output value is stored in the memory 69 as head information, and the temperature is kept in accordance with the correction value stored in the memory 69. The threshold set in the heater control circuit 66 may be adjusted.

In the embodiment shown in FIG. 1, grooves for forming the liquid flow path 7 are formed in the element substrate 1, and the member (orifice plate 4) in which the discharge ports 5 are formed is formed in the element substrate 1. Although the example in which the top plate 3 is formed of a member different from the top plate 3 is described, the structure of the liquid ejection head to which the present invention is applied is not limited to this.

For example, if a wall corresponding to the thickness of the orifice plate is left on the end surface of the top plate and a discharge port is formed on this wall by ion beam processing, electron beam processing, or the like, the liquid can be used without using the orifice plate. An ejection head can be configured. As described above, if the channel side wall is formed on the element substrate, the positional accuracy of the liquid channel with respect to the heating element is improved, and the shape of the top plate can be simplified. Instead of forming the flow path side walls on the element substrate, grooves serving as liquid flow paths and grooves serving as common liquid chambers may be formed in the top plate. The movable member can be formed on the top plate using a photolithography process, but in the case where the element substrate is provided with the flow path side wall,
The element substrate can also be formed at the same time as the possible members are formed on the element substrate. This will be described later.

Next, the ink presence / absence detection using the temperature sensor and the head driving operation accompanying the detection result will be described with reference to FIGS.
This will be described with reference to FIG.

FIGS. 8 to 12 are schematic explanatory diagrams for explaining a modification of the circuit configuration of the element substrate and the top plate of the liquid discharge recording head according to the present invention.
Shows a plan view of the element substrate, and (b) shows a plan view of the top plate. In these figures, as in FIG. 2, (a) and (b) of each figure show opposing surfaces, and (b) of each figure.
Indicate the positions of the liquid chamber and the flow path when they are joined to the element substrate.

The heads shown in FIGS. 8 to 12
Although the structure in which the flow path wall 401a is provided in the element substrate 401 is illustrated as an example, the structure of the element substrate and the top plate can be applied to any of the above-described embodiments. In addition, in the following description, it is needless to say that embodiments in which the respective embodiments shown in FIGS. 8 to 12 are combined are also included in the present invention, unless otherwise specified. In the following description, portions having common functions are described using the same reference numerals.

In FIG. 8A, on the element substrate 401, as described above, a plurality of heating elements 402 arranged in parallel corresponding to the flow paths, a sub-heater 455 provided in the common liquid chamber, and an image A driver 411 for driving these heating elements 402 in accordance with data and an image data transfer unit 412 for outputting input image data to the driver 411 are provided, and a flow path wall 401a for forming a nozzle is provided.
Also, a liquid chamber frame 401b for forming a common liquid chamber is provided.

On the other hand, in FIG. 8B, a top plate 403 has a temperature sensor 41 for measuring the temperature in the common liquid chamber.
3 and a sensor driver 417 for driving the temperature sensor 413
A limiting circuit 459 for limiting or stopping the driving of the heating resistor element based on the output of the temperature sensor, and a heating element control for controlling driving conditions of the heating element 402 based on signals from the sensor driving unit 417 and the limiting circuit 459. A portion 416 is provided, and a supply port 403a communicating with the common liquid chamber is opened to supply the liquid from outside to the common liquid chamber.

Further, the element substrate 401 and the top plate 403
Connection contact pads 414 and 418 for electrically connecting a circuit or the like formed on the element substrate 401 and a circuit or the like formed on the top plate 403 are respectively provided at the opposing portions of the bonding surface of FIG. Is provided. The element substrate 401 is provided with an external contact pad 415 serving as an input terminal for an external electric signal. Element substrate 4
01 is larger than the size of the top plate 403, and the external contact pads 415 are
3 are provided at positions exposed from the top plate 403 when they are joined. These circuits are formed by a method similar to that described with reference to FIG. Then, when the element substrate 401 and the top plate 403 configured as described above are aligned and joined, the circuits and the like formed on the element substrate 401 and the top plate 403 via the respective connection contact pads 414 and 418. Are electrically connected.

A space between several tens of μm is filled with ink between the first substrate (element substrate 401) and the second substrate (top plate 403). Therefore, when heating is performed by the sub-heater 455, there is a difference in how heat is transmitted to the second substrate depending on the presence or absence of ink.
Therefore, the difference in the manner of heat transmission is determined by a temperature sensor 413 such as a diode sensor using a PN junction.
, It is possible to detect the presence or absence of ink in the liquid chamber. Therefore, when the temperature sensor 413 detects an abnormal temperature in comparison with the presence of ink, for example, according to the detection result of the temperature sensor 413, the driving to the heating element 402 is limited by the above-described limiting circuit 459.
Alternatively, by stopping or outputting a signal to notify the abnormality to the main body, it is possible to provide a head capable of preventing physical damage to the head and constantly exhibiting stable ejection performance.

In particular, in the case of the present invention, since the above-described temperature sensor and limiting circuit can be manufactured by a semiconductor wafer process, elements can be arranged at optimum positions and the cost of the head itself increases. The function of preventing damage to the head can be added without performing the above operation.

FIG. 9 is an explanatory view showing a modified example of FIG. 8. In the modified example shown in FIG.
This embodiment differs from the embodiment shown in FIG. 8 in that a discharge heater, that is, a heating element 402 is used. In the modification shown in FIG. 9, the temperature sensor 413 is provided in a region on the top plate 403 facing the heating element 402, and the temperature when driving at a short pulse of a level that does not cause foaming in the heating element 402 or at a low voltage. Is detected to detect the presence or absence of ink. In addition to detecting the presence or absence of ink, it is also possible to monitor the temperature while performing the liquid discharging operation and feed back the driving to the drive. The configuration of this modification is
This is particularly effective when it is difficult to arrange a sub-heater in the common liquid chamber. Further, in this modification, the heating element control unit 416 limits or stops the head drive based on the output of the temperature sensor 413.

The modification shown in FIG. 10 is different from the modification shown in FIG. 9 in that a plurality of groups (413a, 413a and 413a in FIG.
b, 413c... corresponding to each nozzle). Heating element 402
Can be selectively driven. Thus, by providing a plurality of temperature sensors in this way, it is possible to detect the state of the ink such as the presence or absence of the ink in a finer portion.

Further, as in this embodiment, each heating element 402
By providing a temperature sensor so as to correspond to
A temperature change at the time of liquid ejection can be detected for each nozzle, and it is possible to detect the presence or absence of ink in the nozzles, and furthermore, a foaming state based on the temperature. The detection of partial non-ejection due to ink exhaustion for each nozzle may be performed by providing a memory as described in FIG. 12 and comparing the data with the property ejection data held in the memory, Comparison with data of a plurality of adjacent nozzles (for example, 4
If the output is abnormal only in 413b in 13a, 413b, 413c,..., It is determined that 413b is abnormal).

In this case, since the temperature sensors 413a, 413b, 413c... Do not correspond to the heating element 402 by electric wiring connection, even if they are provided on the top plate 403, the wiring is complicated. There is no problem such as becoming. Also,
Even when a plurality of sensors are provided, the manufacturing cost is not increased by manufacturing the semiconductor wafer process as in the present invention. Therefore, it is particularly preferable to employ the method in a full line head described later.

The modification shown in FIG. 11 is different from the modification shown in FIG. 9 in that both the element substrate 401 and the top plate 403 are provided with temperature sensors 413a and 413b. If the temperature sensor is arranged only on one of the substrates, the threshold value of the presence or absence of ink changes depending on the outside air temperature and the state of the head (for example, immediately after the end of printing),
Even if control becomes difficult, measuring the difference between the temperature rises of the two sensors during heating makes it easier and more accurate to measure the presence or absence of ink than when only one substrate has a sensor. There is an advantage that the state can be detected.

The variation shown in FIG. 12 is different from the variation shown in FIG. 11 in that the temperature change during heating of the heating resistor element when there is no ink in the head manufacturing process and when it is present is stored as head information. The difference is that a memory 469 for outputting to the heating element control unit 416 is provided. Thus, by providing the memory 469 and comparing the value of the memory 469 with the output of the sensor, it is possible to detect the presence or absence of ink with higher accuracy.

Of course, as described in the above-described embodiment, each of the heating elements 402 measured in advance is stored in this memory.
(A liquid discharge amount characteristic at a constant temperature and a predetermined pulse application), and head information such as ink to be used.

Next, a method of manufacturing the liquid discharge head shown in FIG. 1 will be described. In the liquid ejection head of the present embodiment, as described above, a plurality of elements or electric circuits having different functions for controlling the driving conditions of the energy conversion element, that is, the heating element 2, are mounted on the element substrate 1 in accordance with the function. It is distributed to the plate 3. In the manufacturing method described below, a plurality of elements or electric circuits of the element substrate 1 and the top plate 3 are electrically connected to one contact pad of the element substrate 1 or the top plate 3. Metal bumps are formed on the other of the element substrate 1 and the top plate 3, and a concave electrical connection portion is formed in which the metal bump engages and is electrically connected to the metal bump.

FIGS. 13 and 14 illustrate an example of a process of forming the movable member 6 and the flow path side wall 9 using a photolithography process when the movable member 6 and the flow path side wall 9 are provided on the element substrate 1. FIG.
13 and 14 show cross sections along a direction perpendicular to the liquid flow direction of the element substrate on which the movable member and the flow path side wall are formed.

FIG. 15 is a view for explaining a process of joining the top plate 3 to the element substrate 1 having the movable member 6 and the flow path side wall 9 formed thereon. This FIG.
2 shows a cross section of the element substrate 1 and the top plate 3 along the liquid flow direction. FIG. 16 is a view for explaining a method of forming a SiN film on the element substrate 1 using a plasma CVD apparatus, and FIG. 17 is a view for explaining a method of etching the SiN film using a dry etching apparatus. FIG.

First, as shown in FIG. 4A, a heating element 2, an electric circuit such as a driver 11 and an image data transfer section 12, a functional element such as a sensor 13, and a connection element made of Al are used. The element substrate 1 including the contact pads 14 and the external contact pads 15 is manufactured.
Although the driver 11, the image data transfer section 12, the sensor 13, the connection contact pad 14, and the external contact pad 15 are not shown in FIGS. 13 and 14, the element substrate 1 having such a configuration is shown in FIGS. Is shown in As described above, the contact pad for connection 1
4 is for electrically connecting a functional element or an electric circuit or the like formed on the element substrate 1 to a functional element or an electric circuit or the like formed on the top plate 3. It is electrically connected to an element or an electric circuit. The external contact pad 15 serves as an input terminal for an external electric signal.

Next, an Au film is formed on the surface of the connection contact pad 14 of the element substrate 1. The Al film formed on the connection contact pads 14 is connected to the connection contact pads 14 and 18 via gold bumps (Au bumps) formed on the connection contact pads 18 of the top plate 3 as described later. Are eutectically bonded to the gold bumps to electrically connect them.

Next, in FIG. 13A, a connection pad for making an electrical connection with the heating element 2, a connection contact pad 14, and an external connection are formed on the entire surface of the element substrate 1 on the heating element 2 side. Contact pad 15 and contact pad 1 for connection
4, a TiW film (not shown) having a thickness of about 50
00 ° is formed. An Al film for forming the gap forming member 71 is formed on the surface of the TiW film, that is, the surface of the element substrate 1 on the side of the heating element 2 by a sputtering method to a thickness of about 4 μm.
m. The formed Al film is patterned by using a well-known photolithography process, and the element substrate 1 and the movable member are positioned at positions corresponding to the bubble generation region 10 between the heating element 2 and the movable member 6 shown in FIG. A plurality of gap forming members 71 made of an Al film are formed for forming a gap between them. Each gap forming member 71 is made of SiN which is a material film for forming the movable member 6 as described later.
The film 72 extends to the region to be etched.

The gap forming member 71 functions as an etching stop layer when the liquid flow path 7 and the movable member 6 are formed by dry etching as described later. this is,
A TiW layer as a pad protection layer on the element substrate 1,
This is because the Ta film as the anti-cavitation film and the SiN film as the protective layer on the resistor are etched by the etching gas used to form the liquid flow path 7, and these layers and films are etched. Is prevented by the gap forming member 71. Therefore, when the liquid flow path 7 is formed by dry etching, the TiW
The width of each gap forming member 71 in the direction perpendicular to the flow direction of the liquid flow path 7 is set to be smaller than the width of the liquid flow path 7 formed in the step of FIG. Has also become wider.

Further, at the time of dry etching, ion species and radicals are generated, which may damage the heating element 2 of the element substrate 1 and the functional elements. This protects the heating element 2 and the functional element of the element substrate 1.

Next, in FIG. 13B, the gap forming member 7
On the surface of the first substrate 1 and on the surface of the element substrate 1 on the side of the gap forming member 71, a SiN film 72 of about 5.0 μm thickness, which is a material film for forming the movable member 6 by using the plasma CVD method
Is formed so as to cover the gap forming member 71. Si
The N film 72 is a liquid flow path forming member that forms a part of the flow path side wall 9. Here, SiN is formed using a plasma CVD apparatus.
When forming the film 72, as described below with reference to FIG. 16, the anti-cavitation film made of Ta provided on the element substrate 1 is grounded via a silicon substrate or the like constituting the element substrate 1. I do. Thereby, the functional elements such as the heating element 2 and the latch circuit in the element substrate 1 can be protected against charges of ion species and radicals decomposed by the plasma discharge in the reaction chamber of the plasma CVD apparatus.

As shown in FIG. 16, a reaction chamber 83a of the plasma CVD apparatus for forming the SiN film 72 has
An RF electrode 82a and a stage 85a facing each other at a predetermined distance are provided. A voltage is applied to the RF electrode 82a by an RF power supply 81a outside the reaction chamber 83a. On the other hand, the RF electrode 82a of the stage 85a
The element substrate 1 is mounted on the side surface, and the surface of the element substrate 1 on the side of the heating element 2 faces the RF electrode 82a. Here, the cavitation-resistant film made of Ta formed on the surface of the heating element 2 of the element substrate 1 is electrically connected to the silicon substrate of the element substrate 1 as described above. Reference numeral 71 is grounded via the silicon substrate of the element substrate 1 and the stage 85a.

In the plasma CVD apparatus configured as described above, a gas is supplied into the reaction chamber 83a through the supply pipe 84a with the cavitation-resistant film grounded, and the gas is supplied between the element substrate 1 and the RF electrode 82a. Plasma 86
Generate. The ionic species and radicals decomposed by the plasma discharge in the reaction chamber 83a are deposited on the element substrate 1, whereby the SiN film 72 is formed on the element substrate 1.
At this time, charges are generated on the element substrate 1 due to ionic species and radicals. However, since the cavitation-resistant film is grounded as described above, the functional elements such as the heat generating element 2 and the latch circuit in the element substrate 1 can be used. Damage due to ionic species and radical charges is prevented.

Next, in FIG. 13C, an Al film having a thickness of about 600 was formed on the surface of the SiN film 72 by sputtering.
After the formation of 0 °, the formed Al film is patterned by using a well-known photolithography process, and a portion corresponding to the movable member 6 on the surface of the SiN film 72, ie, Si
The Al film 73 as a second protective layer is left in the movable member forming region on the surface of the N film 72. The Al film 73 becomes a protective layer (etching stop layer) when the liquid flow path 7 is formed by dry etching.

Next, in FIG. 14A, an SiN film 74 for forming the channel side wall 9 is formed on the surface of the SiN film 72 and the Al film 73 by a microwave CVD method to a thickness of about 5 μm.
0 μm is formed. Like the SiN film 72, the SiN film 74 is also a liquid flow path forming member that forms a part of the flow path side wall 9. Here, as a gas used for forming the SiN film 74 by the microwave CVD method, monosilane (Si
H _4), using nitrogen (N ₂₎ and argon (Ar).
As a combination of the gases, other than the above, a combination with disilane (Si ₂ H ₆ ), ammonia (NH ₃ ), or a mixed gas may be used. Further, when the frequency is 2.
The microwave power of 45 [GHz] is set to 1.5 [kW], and the gas flow rate is set to 100 [sccm] for monosilane, 100 [sccm] for nitrogen, and 40 [sccm] for argon. The SiN film 74 was formed under a high vacuum at a pressure of 5 [mTorr]. Alternatively, the SiN film 74 may be formed by a microwave plasma CVD method using a component ratio other than that of the gas, a CVD method using an RF power supply, or the like.

When the SiN film 74 is formed by the CVD method, it is made of Ta formed on the surface of the heating element 2 as in the method of forming the SiN film 72 as described above with reference to FIG. The anti-cavitation film is grounded via the silicon substrate of the element substrate 1. As a result, the heating element 2 in the element substrate 1 reacts against the charges of ion species and radicals decomposed by the plasma discharge in the reaction chamber of the CVD apparatus.
And functional elements such as a latch circuit.

After an Al film is formed on the entire surface of the SiN film 74, the formed Al film is patterned by using a well-known method such as photolithography.
The Al film 75 remains on the surface of the N film 74 except for the portion corresponding to the liquid flow path 7. As described above, the width of each gap forming member 71 in the direction orthogonal to the flow direction of the liquid flow path 7 is the same as the width of the liquid flow path 7 formed in the next step of FIG.
, The side portion of the Al film 75 is arranged above the side portion of the gap forming member 71.

Next, in FIG. 14B, the SiN film 74 and the SiN film 72 are etched using an etching apparatus using dielectrically coupled plasma to form the flow path side wall 9 and the movable member 6 at the same time. In the etching apparatus, CH
Using a mixed gas of ₃ F and SF ₆ , using the Al films 73 and 25 and the gap forming member 71 as an etching stop layer and a mask, the SiN film 74 has a trench structure.
The film 74 and the SiN film 72 are etched. This S
In the step of patterning the iN film 72, unnecessary portions of the SiN film 72 are removed so that the supporting and fixing portion of the movable member 6 is directly fixed to the element substrate 1 as shown in FIG. The constituent material of the contact portion between the supporting and fixing part of the movable member 6 and the element substrate 1 includes TiW which is a constituent material of the pad protection layer and T which is a constituent material of the anti-cavitation film of the element substrate 1
a.

In the step of patterning the SiN films 72 and 74, the side walls of the concave electric connection portions are formed so that the concave electric connection portions are formed on the element substrate 1 as described later with reference to FIG. SiN films 72 and 74 are left. A connection contact pad 14 is arranged at the bottom of the concave portion of the concave electric connection portion.

Here, using a dry etching apparatus, S
When etching the iN films 72 and 24, FIG.
, The gap forming member 71 is grounded via the element substrate 1 and the like as described below. Accordingly, it is possible to prevent the charge of the ion species and the radical generated during the dry etching from remaining in the gap forming member 71, and to protect the heating element 2 of the element substrate 1 and the functional elements such as the latch circuit. In addition, since the width of the gap forming member 71 is wider than the width of the liquid flow path 7 formed in this etching step, the heat generation of the element substrate 1 when the unnecessary portion of the SiN film 74 is removed. The surface on the body 2 side is not exposed, and the element substrate 1 is reliably protected by the gap forming member 71.

As shown in FIG. 17, in a reaction chamber 83b of a dry etching apparatus for etching the SiN films 72 and 24, an RF electrode 82b and a stage 85b facing each other at a predetermined distance are provided. I have. A voltage is applied to the RF electrode 82b by an RF power supply 81b outside the reaction chamber 83b. Meanwhile, stage 8
The element substrate 1 is mounted on the surface of the 5b on the side of the RF electrode 82b, and the surface of the element substrate 1 on the side of the heating element 2 faces the RF electrode 82b. Here, the gap forming member 71 made of an Al film is electrically connected to the cavitation-resistant film made of Ta provided on the element substrate 1, and the cavitation-resistant film described above with reference to FIG. As described above, the gap forming member 71 is electrically connected to the silicon substrate of the element substrate 1, and is grounded via the anti-cavitation film and the silicon substrate of the element substrate 1 and the stage 85b.

In the dry etching apparatus thus configured, a mixed gas of CH ₃ F and SF ₆ is supplied into the reaction chamber 83b through the supply pipe 84b with the gap forming member 71 grounded, and the SiN film 74, 22 is etched. At this time, even if charges are generated on the element substrate 1 by ionic species or radicals generated by gas decomposition, the gap forming member 71 is grounded as described above,
Functional elements such as the heating element 2 and the latch circuit in the element substrate 1 are prevented from being damaged by ionic species or radical charges.

In this embodiment, a mixed gas of CH ₃ F and SF ₆ is used as a gas supplied to the inside of the reaction chamber 83b. However, CF ₄ gas or C ₂ F ₆ gas, or C ₂ F ₆ and O _Two
May be used.

Next, in FIG. 14 (c), the Al films 73 and 25 are heated and etched using a mixed acid of acetic acid, phosphoric acid and nitric acid, thereby forming the Al films 73 and 25 and the gap formed of the Al film. The member 71 is eluted and removed, and the movable member 6 and the channel side wall 9 are formed on the element substrate 1. Thereafter, portions of the TiW film as a pad protection layer formed on the element substrate 1 corresponding to the bubble generation region 10 and the pad are removed using hydrogen peroxide. Thereby, the Au film on the connection contact pad 14 and the external connection contact pad 15 are exposed. Element substrate 1 and channel side wall 9
The contact portion with Ti is formed of Ti which is a constituent material of the pad protective layer.
W and Ta which is a constituent material of the anti-cavitation film of the element substrate 1 are included.

Next, the step of joining the top plate 3 to the element substrate 1 having the movable member 6 and the channel side wall 9 formed thereon will be described with reference to FIG. FIG. 15A shows a cross section along a flow direction of the movable member 6 and the flow path side wall 9 formed on the element substrate 1 immediately after the step described with reference to FIG. 14C. Have been.

As shown in FIG. 15A, a portion on the free end side of the movable member 6 on the surface of the element substrate 1 on the side of the heating element 2,
That is, the front end face side portion of the surface of the element substrate 1 includes:
An orifice plate portion 91 composed of SiN films 72 and 74 left on the surface of the element substrate 1 is formed.
Further, a side wall portion 92 composed of the SiN films 72 and 74 left on the surface of the element substrate 1 is also formed around the connection contact pads 14 on the surface of the element substrate 1 on the side of the heating element 2. . As described above, the SiN films 72 and 74 are formed by the etching process described with reference to FIG. 14B so that the orifice plate portion 91 and the side wall portion 92 are formed on the element substrate 1 in addition to the flow path side wall 9. Is partially removed. Here, the concave portions 93 are formed on the element substrate 1 by removing the portions of the SiN films 72 and 74 corresponding to the connection contact pads 14, and the side wall portions 92 forming the concave portions 93 and the concave portions 93 are formed. 93 and the contact pad 14 on the bottom of the connection contact pad 14
The metal portion of the u film constitutes a concave electrode portion 94 having a concave portion 93, which is a concave electric connection portion. The concave electrode portion 94 is provided on the first substrate provided on the element substrate 1 serving as the first substrate.
Electrical connection.

On the other hand, in a process different from the manufacturing process described above,
As described above, the top plate 3 provided with the connection contact pads 18 and the like is prepared in advance, and before the top plate 3 is bonded to the element substrate 1, as shown in FIG. A gold bump 95, which is a metal bump, is formed as a convex electric connection portion on the surface of the substrate. This gold bump 95
It serves as a second electric connection portion provided on the top plate 3 as the second substrate.

Next, in FIG. 15B, on the surface of the connection contact pad 18, the gold bump
5 is formed, the surface of the top plate 3 on the side of the gold bump 95 is directed toward the surface of the element substrate 1 on the side of the concave electrode portion 94, and the gold bump 95 is inserted into the concave portion 93 of the concave electrode portion 94 to form the concave electrode. Part 94
With the gold bump 95. And gold bump 95,
Then, the Au film on the connection contact pad 18 is melted, and a bonding utilizing a metal eutectic, that is, a eutectic bonding is performed between the gold bump 95 and the Au film. As described above, by adopting the same metal as the metal species of both the gold bump 95 and the Au film on the connection contact pad 18, the temperature and pressure at the time of joining can be reduced, and the joining strength can be reduced. Can be increased.

Here, the engagement relationship between the gold bump 95 and the concave electrode portion 94 will be described with reference to FIG. FIG. 18 shows a state before the gold bump 95 and the concave electrode portion 94 are joined. The volume of the gold bump 95 before bonding as shown in FIG. 18 and V _1, when the volume of the recess 93 of the recessed electrode portion 94 was set to V _2, the relationship of the volume V ₁ and V ₂ is, V ₁ ≦ V ₂ To satisfy the relationship. By thus increasing the volume V ₂ in the recess 93 than the volume V ₁ of the gold bump 95, the side wall portion 92 upon joining the gold bump 95 and the recessed electrode portion 94 to melt the gold bumps 95 The formation of a gap between the upper surface and the top plate 3 is prevented. When the respective volumes in the gold bump 95 and the concave portion 93 are set in this way, the density of the wiring may change, but since the contact pads for connection 14 and 18 are used for transmitting and receiving signals, Density does not pose a problem for signal transmission and reception.

As described above with reference to FIG. 4, the top plate 3 has a sensor driving section 17 for driving the sensor 13 provided on the element substrate 1 and an output result from the sensor driven by the sensor driving section 17. And a heating element control section 16 for controlling the driving conditions of the heating element 2 based on the heating element. Therefore,
From the sensor driving unit 17 of the top plate 3 to the sensor 13 of the element substrate 1
And the transmission and reception of signals between the heating element control unit 16 of the top plate 3 and the functional elements or the electric circuit of the element substrate 1 are performed via the gold bumps 95 and the concave electrode parts 94.

Next, in FIG. 15C, from the side of the orifice plate portion 91 opposite to the movable member 6 side, that is, from the front end surface side of the orifice plate portion 91, the front end surface of the orifice plate portion 91 is exposed to the excimer laser through the mask 96. By irradiating 97, a plurality of discharge ports 5 are formed in the orifice plate portion 91. Thus, a liquid discharge head is manufactured as shown in FIG.

In the manufacturing method described above, a plurality of elements or electric circuits having different functions for controlling the driving conditions of the heating element 2 are respectively allocated to the element substrate 1 and the top plate 3 according to their functions. A gold bump 95 is formed on the top plate 3 as a convex electric connection portion, and a concave electrode portion 94 is formed on the element substrate 1 to be engaged with the gold bump 95 and electrically connected to the gold bump 95. Have been. This allows the element substrate 1 and the top plate 3 to be positioned to some extent by engaging the gold bumps 95 and the concave electrode portions 94 when joining the element substrate 1 and the top plate 3. Becomes Further, since the side wall portion 92 of the concave electrode portion 94 is a hard side wall containing silicon, eutectic bonding involving melting between the metal in the gold bump 95 and the concave electrode portion 94 is performed, so that the hard side wall portion 92 is formed. Thereby, the positional accuracy between the element substrate 1 and the top plate 3 can be improved.

Further, as described above, the concave electrode portions 94 are provided on the element substrate 1 and the gold bumps 95 are provided on the top plate 3, and the eutectic bonding between the gold bumps 95 and the concave electrode portions 94 is used to make contact with the element substrate 1. By joining the plate 3, the element substrate 1 and the top plate 3
Bonding between wafers, that is, between wafers becomes possible, and the yield in manufacturing the liquid discharge head is improved. As a result, the manufacturing cost of the liquid ejection head can be reduced.

Also, silicon is used as the material of the element substrate 1 and silicon nitride, silicon oxide or silicon carbide is used as the material of the movable member 6 and the channel side wall 9.
By using a silicon-based material, the thermal expansion coefficients of those members become substantially equal. This prevents the strength of the fixed portion of the movable member 6 with respect to the element substrate 1 and the decrease in the adhesion between the flow path side wall 9 and the element substrate 1 due to the temperature change. As a result, even if the temperature of the liquid discharge head changes, the adhesion between the element substrate 1 and the flow path side wall 9, the position of the movable member 6 and the liquid flow side wall 9 with respect to the heating element 2, and the position of the liquid flow path 7 A liquid discharge head in which the flow resistance hardly changes can be manufactured.

Further, by using a photolithography process to form the movable member, it is possible to reduce variations in mechanical characteristics of the movable member due to dimensional variations such as the length and width of the movable member in the discharge direction. Can be. In addition, the movable member 6 and the flow path side wall 9 can be formed with high accuracy.
And it can be formed with high density.

In the method of manufacturing a liquid discharge head described above,
The top plate was joined to the element substrate 1 having the movable member 6 and the flow path side wall 9 formed thereon. However, a liquid ejection head was manufactured by another manufacturing method different from this manufacturing method as described below. May be.

FIG. 19 is a view for explaining an example of a method of manufacturing the movable member 6 for the liquid discharge head described with reference to FIG. 1. FIG. 19 shows the liquid flow path 7 shown in FIG. A cross section along the flow path direction is shown. In the manufacturing method described with reference to FIG. 19, the device formed by forming the movable member 6 on the element substrate 1 and the device formed by forming the channel side wall on the top plate are joined together as shown in FIG. The liquid discharge head having the above configuration is manufactured. Therefore, in this manufacturing method, the movable member 6
Before joining the top plate to the element substrate 1 in which is formed, the channel side wall is formed in the top plate.

First, in FIG. 19A, a first pad for protecting a connection pad portion for making an electrical connection with the heating element 2 is provided on the entire surface of the element substrate 1 on the heating element 2 side. A TiW film 26 as a protective layer is formed to a thickness of about 5000 Å by a sputtering method.

Next, in FIG. 19B, an Al film for forming the gap forming member 71a is formed to a thickness of about 4 μm on the surface of the TiW film 26 by a sputtering method. The gap forming member 71a extends to a region where the SiN film 72a is etched in a step of FIG. By patterning the formed Al film using a well-known photolithography process, only a portion of the Al film corresponding to the supporting and fixing portion of the movable member 6 is removed, and a gap forming member is formed on the surface of the TiW film 26. 71a is formed. Therefore, a portion of the surface of the TiW film 26 corresponding to the supporting and fixing portion of the movable member 6 is exposed. This gap forming member 71a is made of an Al film for forming a gap between the element substrate 1 and the movable member 6, similarly to the gap forming member 71 shown in FIGS.
However, the gap forming member 71a is
Unlike the TiW film 2 including a position corresponding to the bubble generation region 10 between the heating element 2 and the movable member 6 shown in FIG.
It is formed on all of the surfaces of the movable member 6 except for the portion corresponding to the supporting and fixing portion of the movable member 6. Therefore, in this manufacturing method, unlike the manufacturing method described with reference to FIGS. 13 and 14, the gap forming member 71a is formed up to the portion of the surface of the TiW film 26 corresponding to the channel side wall.

The gap forming member 71a functions as an etching stop layer when the movable member 6 is formed by dry etching as described later. This is because the TiW layer 26, the Ta film as the anti-cavitation film in the element substrate 1, and the SiN film as the protective layer on the resistor are etched by the etching gas used to form the liquid flow path 7. This is because such a gap forming member 71a is formed on the element substrate 1 in order to prevent the etching of those layers and films. This allows
When the dry etching of the SiN film is performed to form the movable member 6, the surface of the TiW film 26 is not exposed, and the TiW film 26 by the dry etching and
The functional element in the element substrate 1 is prevented from being damaged by the gap forming member 71a.

Next, in FIG. 19C, the gap forming member 7
1a and the entire exposed surface of the TiW film 26, using a plasma CVD method, a SiN film 72 having a thickness of about 4.5 μm, which is a material film for forming the movable member 6.
a is formed so as to cover the gap forming member 71a.
Here, when the SiN film 72a is formed using the plasma CVD apparatus, the element substrate 1 is formed via the silicon substrate of the element substrate 1 in the same manner as the method described with reference to FIG.
The anti-cavitation film is grounded. As a result, charges are generated on the element substrate 1 by ion species and radicals decomposed by plasma discharge in the reaction chamber of the plasma CVD apparatus, but functional elements such as the heating element 2 and the latch circuit in the element substrate 1 are damaged. Is prevented.

Next, in FIG. 19D, the SiN film 72a
An Al film having a thickness of about 61
Then, the formed Al film is patterned using a well-known photolithography process to form a SiN film.
An Al film (not shown) as a second protective layer is left on a portion of the surface of the film 72a corresponding to the movable member 6. The Al film as the second protective layer is made of Si to form the movable member 6.
It becomes a protective layer (etching stop layer), that is, a mask when performing dry etching of the N film 72a.

Then, an etch using a dielectrically coupled plasma
Using the second protective layer as a mask,
By patterning the N film 72a, the SiN film 7
The movable member 6 composed of the remaining portion 2a is formed.
In the etching equipment, CH _ThreeF and SF₆Use of mixed gas
In the step of patterning the SiN film 72a.
Means that the supporting and fixing part of the movable member 6 is an element as shown in FIG.
Unnecessary SiN film 72a to be directly fixed to substrate 1
Remove the part. Supporting fixed part of movable member 6 and element substrate 1
The material of the contact portion with the pad protection layer
Certain TiW and anti-cavitation film of element substrate 1
Is included.

Here, using a dry etching apparatus,
When etching the iN film 72, the gap forming member 71a is grounded via the element substrate 1 and the like, as in the method described with reference to FIG. This prevents charges of ionic species and radicals generated at the time of etching from remaining on the gap forming member 71a, and prevents the heating elements 2
And functional elements such as a latch circuit.
In this etching step, the SiN film 72a
Since the gap forming member 71a is formed in the portion exposed by removing the unnecessary portion of the TiW film, that is, the region to be etched, the surface of the TiW film 26 is not exposed, and the gap is formed. The element substrate 1 is reliably protected by the member 71a.

Next, in FIG. 19 (e), the second protective layer made of the Al film formed on the movable member 6 and the gap forming member made of the Al film are formed by using a mixed acid of acetic acid, phosphoric acid and nitric acid. The movable member 6 is formed on the element substrate 1 by eluting and removing 71a. Thereafter, portions of the TiW film 26 formed on the element substrate 1 corresponding to the bubble generation region 10 and the pad are removed using hydrogen peroxide.

In a step different from the step of forming the movable member 6 on the element substrate 1, a groove is formed directly on the top plate to form a flow path side wall on the top plate, or one surface of the top plate may be formed. Then, a top plate having an equivalent to the passage side wall 9 shown in FIG. 1 is manufactured. Then, the liquid ejecting head having the configuration shown in FIG. 1 is manufactured by joining the top plate to the element substrate 1 having the movable member 6 formed thereon by the method described with reference to FIG.

In the manufacturing method described with reference to FIG.
Although the case where the supporting and fixing portion of the movable member 6 is directly fixed to the element substrate 1 as shown in FIG. 1 has been described, the movable member is moved through the pedestal portion by applying this manufacturing method. A liquid discharge head fixed to the element substrate can also be manufactured. In this case, before the step of forming the gap forming member 71a shown in FIG. 19B, a pedestal for fixing the end of the movable member opposite to the free end to the element substrate is heated by the element substrate. Formed on the body-side surface. Also in this case, constituent materials of the contact portion between the pedestal portion and the element substrate include TiW which is a constituent material of the pad protection layer and Ta which is a constituent material of the anti-cavitation film of the element substrate.

As described above, even when the movable member 6 is formed on the element substrate 1 and the flow path side wall is formed on the top plate, for example, the connection of the element substrate 1 can be performed. A gold bump is formed on the contact pad 14 as a convex electric connection part, and a side wall part is formed around the connection contact pad 18 on the top plate 3 to form the concave electrode part 94.
A concave electric connection portion having the same configuration as that described above is formed on the top plate 3. In this case, an Au film is previously formed on the surface of the connection contact pad 18 of the top plate 3. Then, after the gold bump on the element substrate 1 is inserted into the concave portion of the concave electrical connection portion of the top plate 3 to engage the gold bump and the concave electrical connection portion, the gold bump and the connection contact pad 18 are formed. Is melted, and bonding using a metal eutectic, that is, eutectic bonding, is performed between the gold bump and the Au film.

Therefore, even in this case, when the element substrate 1 and the top plate 3 are joined, the gold bumps on the element substrate 1 and the concave electrical connection portions of the top plate 3 are engaged with each other, so that the element substrate 1 It is possible to perform positioning with the top plate 3 to some extent.
Further, when the side wall constituting the side wall of the concave electric connection portion provided on the top plate 3 is a hard side wall containing silicon, eutectic accompanied by melting between metals in the convex electric connection portion and the concave electric connection portion. By performing the coupling, the rigid side walls can improve the positional accuracy between the element substrate 1 and the top plate 3.

As described above, in the liquid ejection head according to the present embodiment, the driving condition of the heating element 2 is controlled.
Each of multiple elements or electrical circuits with different functions
According to its function, it is divided into the element substrate 1 and the top plate 3, and a gold bump is formed as a convex electric connection portion on one of the element substrate 1 and the top plate 3, and the gold bump is formed on the other. A concave electrical connection is formed that engages and is electrically connected to the gold bump. This allows the element substrate 1 and the top plate 3 to be positioned to some extent by engaging the gold bumps and the concave electrical connection portions when joining the element substrate 1 and the top plate 3. Become. Further, since the side wall constituting the side wall of the concave electrical connection is a hard side wall containing silicon, the eutectic bonding accompanied by melting between the metal in the convex electrical connection and the concave electrical connection is performed. The rigid side walls can improve the positional accuracy between the element substrate 1 and the top plate 3.

In the above-described embodiment, metal bumps (specifically, in addition to gold,
Copper, platinum, tungsten, aluminum or ruthenium, or an alloy containing any of these metals), the bumps may not be completely uniform in shape or volume, and may have a concave electrical connection. Can be connected.

Further, the specific configuration of the concave electrical connection portion and the convex electrical connection portion is not limited to the configuration in which only the convex electrical connection portion is deformed at the time of joining as in the above embodiment. For example, by attaching an individual conductive sheet to the surface of each concave portion provided in advance on the first substrate (element substrate 1) corresponding to the convex electric connection portion of the second substrate (top plate 3),
The convex electric connection portion has a planar shape before joining, and if it is configured to have a concave shape after joining, the element substrate 1 and the top plate 3 can be positioned to some extent. It is included in the electrical connection of the present invention. If the configuration satisfies this condition, a configuration in which both the convex electrical connection portion and the concave electrical connection portion are mutually deformed at the time of joining is also included in the electrical connection portion of the present invention.

Further, the convex electric connection portion and the concave electric connection portion are provided on the element substrate 1 and the top plate 3 as described above, and the eutectic junction between the convex electric connection portion and the concave electric connection portion is used. By bonding the wafer and the top plate 3, when wafers are used as the element substrate 1 and the top plate 3, bonding between wafers becomes possible, and the yield in manufacturing the liquid discharge head is improved. As a result, the manufacturing cost of the liquid ejection head can be reduced.

Therefore, a supplementary explanation will be given of the above effects with reference to FIG. FIG. 21 is a diagram illustrating an example of a method for manufacturing a liquid ejection head according to the present invention. As described in the above embodiment, the element substrate 1 and the top plate 3 are placed on the first silicon wafer 100 and the second silicon wafer 101 as shown in FIGS. 21 (a) and 21 (b), respectively. A large number of heads are collectively formed by the number corresponding to the plurality of heads. Here, the movable member 6, the flow path side wall 9, and the concave electrode portion 94 are formed on the element substrate 1, respectively, and the gold bump 95 as a convex electric connection portion is formed on the top plate 3. Therefore, as shown in FIG. 21C, the first silicon wafer 100 and the second silicon wafer 101 on which these are formed are aligned by the gold bumps 95 and the concave electrode portions 94, and then shared. It becomes possible to join the gold bump 95 and the concave electrode part 94 by crystal bonding. Here, after the first silicon wafer 100 and the second silicon wafer 101 are brought into contact with each other so that the concave electrode portion 94 and the gold bump 95 corresponding to the concave electrode portion 94 correspond to each other, the concave electrode portion The 94 and the gold bump 95 corresponding to the concave electrode portion 94 are joined by eutectic joining. Thereafter, the integrated first silicon wafer 100
Also, even if the second silicon wafer 101 is cut, the bond between the element substrate 1 and the top plate 3 is peeled off by eutectic bonding,
Since there is no deviation, the integrated first silicon wafer 100 and second silicon wafer 10
By cutting one, a plurality of liquid ejection heads (head chips) can be simultaneously manufactured with high yield. In this case, the number of times of positioning can be greatly reduced as compared with the case where the element substrate 1 and the top plate 3 of each head are respectively positioned for each head, so that the effect of further improving the productivity can be obtained. it can.

Note that the above-mentioned effect may be attained by positioning the first silicon wafer 100 and the second silicon wafer 101 by a combination of concave and convex shapes. However, the electric connection provided with the element substrate 1 and the top plate 3 may be used. It is preferable that the parts are joined to each other by eutectic bonding. In the case of joining by eutectic bonding, the first silicon wafer may have a configuration in which the shape of the electrical connection portion is not a combination of unevenness, for example, an engagement portion is provided with an unevenness portion engaging with each other other than the electrical connection portion. It suffices to provide another means for enabling the alignment between the second silicon wafer 101 and the second silicon wafer 101, or to perform the alignment at the time of bonding by another method that enables the alignment.

<Liquid Discharge Apparatus> FIG. 20 is a perspective view showing an ink jet recording apparatus which is an example of a liquid discharge apparatus equipped with the liquid discharge head shown in FIG. The head cartridge 601 mounted on the ink jet recording apparatus 600 shown in FIG.
A liquid container for holding the liquid supplied to the liquid ejection head. Head cartridge 601
20 is mounted on a carriage 607 that engages with a spiral groove 606 of a lead screw 605 that rotates via driving force transmission gears 603 and 604 in conjunction with forward and reverse rotation of a driving motor 602, as shown in FIG. Have been. The head cartridge 601 is driven by the power of the drive motor 602.
Is an arrow a along the guide 608 together with the carriage 607.
And b are reciprocated. The inkjet recording apparatus 600 includes a recording medium transport unit (not shown) that transports a print sheet P as a recording medium that receives liquid such as ink discharged from the head cartridge 601. The paper pressing plate 6 for the printing paper P conveyed on the platen 609 by the recording medium conveying means.
10 presses the print paper P against the platen 609 over the moving direction of the carriage 607.

In the vicinity of one end of the lead screw 605, photocouplers 611 and 612 are provided. The photocouplers 611 and 612 are
07, the photocouplers 611 and 6
This is home position detection means for confirming the presence in the area 12 and switching the rotation direction of the drive motor 602 and the like. In the vicinity of one end of the platen 609, a support member 613 that supports a cap member 614 that covers the front surface of the head cartridge 601 having the discharge port is provided.
Further, an ink suction unit 615 for sucking ink that has been idly discharged from the head cartridge 601 and accumulated inside the cap member 614 is provided. The ink suction unit 615 performs suction recovery of the head cartridge 601 through the opening of the cap member 614.

The ink jet recording apparatus 600 is provided with a main body support 619. The moving member 618 is attached to the main body support 619 in the front-rear direction, that is, the carriage 6.
It is supported so as to be movable in a direction perpendicular to the direction of movement 07. The cleaning blade 617 is attached to the moving member 618. Cleaning blade 6
Reference numeral 17 is not limited to this form, and may be another form of a known cleaning blade. Further, the ink suction means 6
15 is provided with a lever 620 for starting suction in the suction recovery operation by the lever 15. The lever 620 moves with the movement of the cam 621 engaging with the carriage 607, and the driving force from the driving motor 602 switches the clutch. The movement is controlled by known transmission means such as. A signal is given to a heating element provided in the head cartridge 601,
An ink jet recording control unit for controlling the driving of each mechanism described above is provided in the main body of the ink jet recording apparatus, and is not shown in FIG. The inkjet recording control unit includes a drive signal supply unit that supplies a drive signal for discharging liquid from the liquid discharge head.

In the ink jet recording apparatus 600 having the above-described configuration, the head cartridge 601 reciprocates over the entire width of the print paper P with respect to the print paper P transported on the platen 609 by the recording medium transport means. Make a record.

[0166]

As described above, according to the present invention, a convex electric connection portion is formed on one of the first substrate and the second substrate constituting the liquid flow path in which the energy conversion element is disposed. The first and second substrates are joined by the other substrate having a concave electrical connection portion that is engaged with the convex electrical connection portion and is electrically connected to the convex electrical connection portion. At this time, by engaging the convex electric connection portion and the concave electric connection portion, it is possible to perform a certain degree of positioning of the first and second substrates. Further, when the side wall constituting the side wall of the concave electrical connection is a hard side wall containing, for example, silicon, by performing eutectic bonding accompanied by melting between metals in the convex electrical connection and the concave electrical connection. The rigid side walls can improve the positional accuracy between the first substrate and the second substrate. Furthermore, the first and second substrates are provided with the convex electric connection portion and the concave electric connection portion, and the first substrate and the first substrate are connected to each other by using the eutectic junction between the convex electric connection portion and the concave electric connection portion. By joining the two substrates,
When wafers are used as the first and second substrates, bonding between the wafers becomes possible, and the yield in manufacturing the liquid discharge head is improved. As a result, there is an effect that the manufacturing cost of the liquid discharge head can be reduced.

Further, according to the present invention, the first and second substrates are provided with an electric connection portion for electrically connecting elements or electric circuits to each other, and the first and second substrates are connected to each other. Since the electrical connection portions are eutectic bonded, when a wafer is used as the first and second substrates when manufacturing the liquid discharge head, a wafer using eutectic bonding between the electrical connection portions is used. Thus, there is an effect that the yield can be improved. As a result, the manufacturing cost of the liquid ejection head can be reduced.

Further, according to the method for manufacturing a liquid discharge head of the present invention, the first and second substrates constituting the liquid discharge head can be positioned with a certain degree of accuracy.
Further, the yield is improved, and the manufacturing cost of the liquid discharge head can be reduced.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view along a liquid flow direction for explaining a liquid discharge head structure according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view of an element substrate used in the liquid discharge head shown in FIG.

FIG. 3 is a schematic cross-sectional view of the element substrate shown in FIG.

FIG. 4 is a diagram for explaining a circuit configuration of the liquid discharge head shown in FIG. 1, wherein FIG. 4A is a plan view of an element substrate,
FIG. 2B is a plan view of the top plate.

FIG. 5 is a plan view of a liquid ejection head unit equipped with the liquid ejection head shown in FIG.

FIG. 6 is a diagram showing a circuit configuration of an element substrate and a top plate in an example in which applied energy to a heating element is controlled according to a sensor output.

FIG. 7 is a diagram illustrating a circuit configuration of an element substrate and a top plate in an example in which the temperature of the element substrate is controlled according to a sensor output.

FIG. 8 is a diagram illustrating a circuit configuration of an element substrate and a top plate in an example of detecting the presence or absence of ink using an output of a temperature sensor.

9 is a diagram showing a modification of the circuit configuration of the element substrate and the top plate shown in FIG.

FIG. 10 is a diagram showing a modification of the circuit configuration of the element substrate and the top plate shown in FIG.

FIG. 11 is a diagram showing a modification of the circuit configuration of the element substrate and the top plate shown in FIG.

FIG. 12 is a diagram showing a modification of the circuit configuration of the element substrate and the top plate shown in FIG.

FIG. 13 is a view for explaining a method of forming a movable member and a channel side wall on an element substrate.

FIG. 14 is a diagram for explaining a method of forming a movable member and a channel side wall on an element substrate.

FIG. 15 is a view for explaining a step of joining a top plate to a device having a movable member and a channel side wall formed on an element substrate.

FIG. 16 shows an example in which S is deposited on an element substrate using a plasma CVD apparatus.
FIG. 3 is a diagram for explaining a method of forming an iN film.

FIG. 17 is a diagram for explaining a method of forming a SiN film using a dry etching apparatus.

FIG. 18 is a diagram for explaining an engagement relationship between a gold bump and a concave electrode portion.

FIG. 19 is a diagram illustrating a method of forming a movable member on an element substrate.

20 is a perspective view showing an ink jet recording apparatus which is an example of a liquid ejection apparatus equipped with the liquid ejection head shown in FIG.

FIG. 21 is a diagram illustrating an example of a method for manufacturing a liquid ejection head according to the present invention.

[Explanation of symbols]

1, 31, 51, 401 Element substrate 2, 32, 52, 402 Heating element 3, 33, 53, 403 Top plate 3a, 3b Groove 3c, 403a Supply port 4 Orifice plate 5 Discharge port 6 Movable member 6a Support point 6b Free end Reference Signs List 7 liquid flow path 7a first liquid flow path 7b second liquid flow path 8 common liquid chamber 9 flow path side wall 10 bubble generation area 11, 411 driver 12, 412 image data transfer unit 13, 63 sensor 14, 18, 414 , 418 Connection contact pad 15, 415 External contact pad 16, 416 Heating element control unit 17, 417 Sensor driving unit 20 Liquid ejection head unit 21 Liquid ejection head 22 Base substrate 23 Printed wiring board 24 Wiring pattern 25 Bonding wire 38 Driving timing Control logic circuit 39 AND circuit 41, 56 Powered Njisuta 42 image data transfer circuit 43 rank heater 44a~44h, 48a~48d, 48g, 48h, 6
4a, 68a Terminals 45a, 45c to 45e, 45h to 45j Input terminals 45b, 45g Ground terminals 45f Drive power supply terminals 45k to 45n Enable signal input terminals 46 Drive signal control circuits 47, 67 Sensor drive circuits 49, 69, 469 Memory 55 Thermal insulation Heater 66 Heating heater control circuit 71, 71a Gap forming member 72, 72a, 74 SiN film 73, 75 Al film 76 TiW film 34 Support member 81a, 81b RF power supply 82a, 82b RF electrode 83a, 83b Reaction chamber 84a, 84b Supply pipe 85a, 85b Stage 86 Plasma 91 Orifice plate 92 Side wall 93 Recess 94 Concave electrode 95 Gold bump 96 Mask 97 Excimer laser 100 First silicon wafer 101 Second silicon wafer 301 Silicon substrate 301 Thermal acid Film 303 Interlayer film 304 Resistive layer 305 Wiring 306 Protective layer 307 Anti-cavitation film 308 Heat acting section 401a Flow path wall 401b Flow path frame 413, 413a to 413c Temperature sensor 420 P-Mos 421 N-Mos 422 N-type well area 423 P Type well region 424 Oxide film isolation region 425, 432 Source region 426 Drain region 428 Gate insulating film 430 N-Mos transistor 431 Drain region 433, 435 Gate wiring 434 Thermal storage layer 436, 438 Interlayer insulating film 437 Al electrode 455 Sub heater 459 Limiting circuit 600 Inkjet recording device 601 Head cartridge 602 Drive motor 603, 604 Driving force transmission gear 605 Lead screw 606 Spiral groove 607 Carriage 607a Lever 608 Guide 609 Platen 610 Paper press plate 611, 612 Photocoupler 613 Support member 614 Cap member 615 Ink suction means 617 Cleaning blade 618 Moving member 618 Body support 620 Lever 621 Cam P Print paper

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Akihiro Yamanaka 3-30-2 Shimomaruko, Ota-ku, Tokyo F-term in Canon Inc. (Reference) 2C056 EA23 EA26 FA03 FA10 HA05 HA16 KC22 2C057 AF93 AG30 AG70 AG83 AG86 AG90 AK07 AN01 AP02 AP11 AP26 AP77 AR14 BA05 BA13

Claims (19)

[Claims] 1. A first substrate and a second substrate for forming a plurality of discharge ports for discharging liquid, a plurality of liquid flow paths joined to each other to communicate with the discharge ports, respectively, A plurality of energy conversion elements arranged in each of the liquid flow paths to convert energy into ejection energy of the liquid in the liquid flow paths, and for controlling driving conditions of the energy conversion elements,
A plurality of elements or electric circuits having different functions, wherein the first element or the electric circuit corresponds to the first
A liquid ejection head divided between the first substrate and the second substrate, wherein one of the first substrate and the second substrate is provided with one of the first and second substrates. A plurality of convex electric connection portions for electrically connecting the elements or electric circuits to each other, and the first substrate or the second
When the first substrate and the second substrate are joined to the other of the substrates, the first substrate and the second substrate are respectively engaged with the plurality of convex electric connection portions and electrically connected to the convex electric connection portions. A liquid ejection head in which a plurality of concave electrical connection portions are formed. 2. The liquid discharge head according to claim 1, wherein the convex electric connection portion and the concave electric connection portion are eutectic bonded. 3. The convex electric connection part is a metal bump formed on an electrode provided on the one substrate, and a part of the concave electric connection part in contact with the convex electric connection part. 2. The liquid ejection head according to claim 1, wherein at least a part is a metal part, and the metal bump and the metal part are eutectic bonded. 4. A side wall portion of the concave electric connection portion is formed of a part of a liquid flow path forming member for forming the liquid flow path, and the concave electric connection portion forms the liquid flow path. The liquid flow path forming member is formed by removing a predetermined portion of the liquid flow path forming member when removing a portion corresponding to the liquid flow path. A liquid ejection head according to any one of the preceding claims. 5. A material for the convex electric connection part and a material for at least a part of the concave electric connection part are any one of gold, copper, platinum, tungsten, aluminum and ruthenium, or gold, copper, The liquid ejection head according to any one of claims 1 to 4, wherein an alloy containing any one of platinum, tungsten, aluminum, and ruthenium is used. 6. The first substrate and the second substrate are made of a silicon material, and the element or the electric circuit is
The liquid discharge head according to claim 1, wherein the liquid discharge head is formed on the first substrate and the second substrate using a semiconductor wafer process technique. 7. A first substrate and a second substrate for forming a plurality of discharge ports for discharging a liquid, a plurality of liquid flow paths connected to the discharge ports by being joined to each other, and A plurality of energy conversion elements arranged in each of the liquid flow paths to convert energy into ejection energy of the liquid in the liquid flow paths, and for controlling driving conditions of the energy conversion elements,
A plurality of elements or electric circuits having different functions, wherein the first element or the electric circuit corresponds to the first
A liquid discharge head divided between the first substrate and the second substrate, wherein the first substrate and the second substrate connect elements or electric circuits of the first and second substrates to each other. A liquid ejection head including an electric connection portion for electrical connection, and an eutectic bond between the electric connection portion of the first substrate and the electric connection portion of the second substrate. 8. The liquid ejection head according to claim 7, further comprising an engagement portion, which is different from the electrical connection portion, for engaging the first substrate and the second substrate with each other. 9. The energy conversion element generates bubbles in the liquid by applying thermal energy to the liquid, and the energy conversion element is disposed in the liquid flow path so as to face the energy conversion element. The liquid ejection head according to claim 1, further comprising a movable member having a free end on a downstream side toward the outlet. 10. The liquid discharge head according to claim 1, wherein the energy conversion element is a heating resistance element. 11. A head cartridge comprising: the liquid discharge head according to claim 1; and a liquid container for holding a liquid supplied to the liquid discharge head. 12. A liquid discharge apparatus comprising: the liquid discharge head according to claim 1; and a drive signal supply unit that supplies a drive signal for discharging liquid from the liquid discharge head. 13. A liquid ejection apparatus comprising: the liquid ejection head according to claim 1; and a recording medium transport unit that transports a recording medium that receives the liquid ejected from the liquid ejection head. apparatus. 14. The liquid discharging apparatus according to claim 12, wherein recording is performed by discharging the liquid from the liquid discharging head and attaching the liquid to a recording medium. 15. A first substrate and a second substrate for forming a plurality of discharge ports for discharging a liquid, and a plurality of liquid flow paths joined to each other to communicate with the discharge ports, respectively. A plurality of energy conversion elements arranged in each of the liquid flow paths to convert energy into ejection energy of the liquid in the liquid flow paths, and for controlling driving conditions of the energy conversion elements,
A plurality of elements or electric circuits having different functions, wherein the first element or the electric circuit corresponds to the first
A method for manufacturing a liquid discharge head divided into a first substrate and a second substrate, wherein one of the first substrate and the second substrate is provided with the first and second substrates. Forming a plurality of convex electric connection portions for electrically connecting elements or electric circuits of the substrates to each other; and forming the plurality of convex electric connection portions on the other of the first substrate and the second substrate. Forming a plurality of concave electrical connection portions that are respectively engaged with the convex electrical connection portions and are electrically connected to the convex electrical connection portions; and bonding the first substrate and the second substrate. Engaging the plurality of convex electrical connection portions with the corresponding plurality of concave electrical connection portions. 16. The manufacturing of the liquid discharge head according to claim 15, wherein the step of bonding the first substrate and the second substrate includes eutectic bonding of the convex electric connection portion and the concave electric connection portion. Method. 17. The liquid passage forming member according to claim 17, wherein a side wall of the concave electric connection portion is formed of a part of a liquid passage forming member for forming the liquid passage. When forming the liquid flow path by removing a portion corresponding to the flow path, by removing a predetermined part of the liquid flow path forming member together with a part corresponding to the liquid flow path, the concave electrical connection portion 17. The method for manufacturing a liquid discharge head according to claim 16, wherein a step of forming the concave electrical connection portion is configured from a step of forming a concave shape. 18. A first substrate and a second substrate for forming a plurality of discharge ports for discharging a liquid, and a plurality of liquid flow paths joined to each other to communicate with the discharge ports, respectively. A plurality of energy conversion elements arranged in each of the liquid flow paths to convert energy into ejection energy of the liquid in the liquid flow paths, and for controlling driving conditions of the energy conversion elements,
A plurality of elements or electric circuits having different functions, wherein the first element or the electric circuit corresponds to the first
A method for manufacturing a liquid ejection head divided between a first substrate and a second substrate, wherein the first and second substrates have a first element or an electric circuit for electrically connecting elements or electric circuits to each other. A step of preparing a first silicon wafer provided with a plurality of the first substrates provided with an electrical connection portion; and for electrically connecting elements or electric circuits of the first and second substrates to each other. Preparing a second silicon wafer provided with a plurality of the second substrates provided with a second electrical connection portion of the first silicon wafer and the second silicon wafer; An abutting step in which the electrical connection of the first electrical connection and the second electrical connection corresponding to the first electrical connection correspond to each other; and after the abutment, the first electrical connection. And the second corresponding to the first electrical connection. And a cutting step of integrally cutting the joined first and second silicon wafers after the joining step. A method for manufacturing a discharge head. 19. The first electrical connection and the second electrical connection.
Are provided in a plurality, and one of the first electrical connection portion and the second electrical connection portion is convex, and the other is electrically connected to the convex electrical connection portion. The method for manufacturing a liquid discharge head according to claim 18, wherein the liquid discharge head has a concave shape to be connected.