JP2000341002A - Microwave control circuit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain an inexpensive microwave circuit that is easily assembled, whose phase shift and attenuation can be changed and whose manufacturing time can be reduced because reproduction of a semiconductor board taking much manufacturing time is not required in the case of redesign of the circuit. SOLUTION: In this microwave control circuit, semiconductor boards 2a, 2b are provided between dielectric boards 1b and 1d. SPDT switches 3a, 3b are provided on the semiconductor boards 2a, 2b, and the dielectric boards 1b and 1d are switched by the switches and have passing phases different from each other.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microwave control circuit, and more particularly to a microwave control circuit that discretely changes a passing phase or a passing loss in a microwave band, a millimeter wave band, or the like.

[0002]

2. Description of the Related Art FIG. 25 is a collection of papers of the 1998 IEICE General Conference, C-1. Electromagnetic field theory, "Ka band 4
80 is a circuit diagram showing a conventional microwave control circuit shown in "Bit Monolithic Phase Shifter", page 80. In the figure, 100 is a semiconductor substrate, and 103a and 103b are SPDs.
T switch, 104a, 104b, 104c, 104d
Is a switching element provided in the SPDT switches 103a and 103b, and 106a and 106b are lines for electrically connecting the SPDT switches 103a and 103b. SPDT switches 103a, 103b, switching elements 104a, 104b, 104c, 104d,
The lines 106a and 106b are monolithically formed on the semiconductor substrate 100.

Next, the operation will be described. The high-frequency signal input to the SPDT switch 103a passes through the switching element 104a and the switching element 104c, and when the switching element 104b and the switching element 104d are in the cutoff state, the switching element 104a of the SPDT switch 103a, the line 106a, and the SPDT switch 1
The signal is output via the switching element 104c of FIG.

Next, the switching element 104b and the switching element 104d pass, and the switching element 104
a and the switching element 104c are in the cutoff state,
A switching element 104b of the PDT switch 103a,
The signal is output via the line 106b and the switching element 104d of the SPDT switch 103b.

Here, by changing the lengths of the line 106a and the line 106b and setting the passing phase to different values,
The passing phase of the high-frequency signal can be switched.

FIG. 26 is a diagram of the Institute of Electronics, Information and Communication Engineers 199
Proceedings of the 8th General Conference, C-1. Electromagnetic Field Theory, "Prototype K-band Power Amplifier Using Flip-Chip Mounting,"
It is sectional drawing which shows the other conventional microwave control circuit shown by 61, and FIG. 27 is the top view. In these figures, 111 is a dielectric substrate, 112 is a dielectric substrate 11
A semiconductor substrate provided on the semiconductor substrate 11;
2, FETs 119 a and 119 b are metal bumps, 110 a and 110 b are matching circuits formed on the dielectric substrate 111, and 121 a and 121 b are bias circuits formed on the dielectric substrate 111. FET1
14 is formed on the semiconductor substrate 112 as described above, and the semiconductor substrate 112 is placed on the dielectric substrate 11 so that the surface on which the FET 114 is formed faces the dielectric substrate 111.
1. The electrodes of the FET 114 and the matching circuits 110a and 110b are connected to the metal bumps 9a and 9b.
Connected through.

Next, the operation will be described. The input high-frequency signal is supplied to F through a matching circuit 110a and a metal bump 119a.
Input to the ET114. The high-frequency signal input to the FET 114 is amplified by the FET 114 and
19b, output via the matching circuit 110b. Here, the bias to the FET 114 is applied to the bias circuit 121.
a and 121b.

[0008]

The conventional microwave control circuit is configured as described above. In the conventional example shown in FIG. 25, the circuit is monolithically formed on the semiconductor substrate 100. Expensive semiconductor substrate 10
However, there is a problem that the size of “0” becomes large and the cost becomes high.

In addition, since the semiconductor element and the circuit are integrated, the circuit must be redesigned when the circuit is redesigned.

When the passive portion of the circuit and the semiconductor elements such as FETs are formed on different substrates as in the conventional example shown in FIGS. 26 and 27, it is necessary to connect the semiconductor elements one by one. When the number of elements is increased, there is a problem that assembly becomes very difficult.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems. The present invention is easy to assemble even when the number of semiconductor elements is increased, the amount of phase shift and the amount of attenuation can be changed, and the circuit can be reconfigured. It is also an object of the present invention to obtain a low-cost microwave control circuit that can reduce the time required for the design without having to recreate a semiconductor substrate that requires a long time for the design.

[0012]

According to the present invention, there is provided a dielectric substrate, a semiconductor substrate, and at least two passive circuits provided on the dielectric substrate, wherein at least one of a phase shift amount and an attenuation amount is provided. Is a microwave control circuit provided with a different passive circuit and an SPDT switch provided on the semiconductor substrate for switching the passive circuit.

Further, the dielectric substrate and the semiconductor substrate are formed on the same plane.

Further, a semiconductor substrate is mounted on a dielectric substrate.

[0015] Further, at least two passive circuits include:
It is composed of at least two lines having different lengths.

Further, at least two passive circuits include:
It is composed of at least two filters having different phase shift amounts.

Further, at least two passive circuits include:
It is composed of lines with different amounts of attenuation and attenuation circuits.

Further, at least two passive circuits are provided.
It is composed of at least one of a line, a filter, and an attenuation circuit.

There are a plurality of SPDT switches and a plurality of semiconductor substrates, and the SPDT switches are provided on separate semiconductor substrates.

There are a plurality of SPDT switches,
The plurality of SPDT switches are all provided on the same semiconductor substrate.

Also, the semiconductor chip is mounted on a flip chip so that the surface on which the SPDT switch is formed faces the surface of the dielectric substrate on which the passive circuit is formed.

Further, the semiconductor device further comprises connection terminals radially arranged on a circumference centered on the center of the semiconductor substrate.

Further, the semiconductor device further includes at least one of a phase shifter and an attenuator of at least one bit provided on the semiconductor substrate.

[0024]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 FIG. 1 is a circuit diagram showing a microwave control circuit according to Embodiment 1 of the present invention. In the figure, 1a, 1b, 1c, 1d are substantially rectangular dielectric substrates, 2a, 2b are substantially rectangular semiconductor substrates, 3a, 3b are SPDT switches provided on the semiconductor substrates 2a, 2b, 4a, 4b , 4c, 4d are SPDT
A switching element provided in the switches 3a and 3b,
17a, 17b, 17c and 17d are switching elements 4a to 4d provided in the SPDT switches 3a and 3b.
Inductors 5a, 5b, 5c, 5 provided in parallel with
Reference numerals d, 5e, and 5f denote metal wires, and reference numerals 6a and 6b denote lines provided on the dielectric substrates 1b and 1d. The lines 6a and 6b have different lengths and different passing phases. Lines 16a and 16b are provided on the dielectric substrates 1a and 1c.

The dielectric substrates 1a and 1c are provided so as to face each other and are parallel to each other.
Is the same as the length of the long side. Further, the dielectric substrates 1b and 1d are also provided in parallel to face each other, and the distance between them is equal to the length of the long side of the dielectric substrate 1a. The dielectric substrates 1a and 1c are installed adjacent to the dielectric substrates 1b and 1d, and these substrates are placed in a 90 ° arrangement so that the corners of the rectangle abut. Further, the semiconductor substrates 2a and 2b are placed in the space of the middle rectangular portion formed by these four dielectric substrates. The length of the long sides of the semiconductor substrates 2a and 2b matches the length of the long sides of the dielectric substrates 1a and 1c, and the dielectric substrate 1a and the semiconductor substrate 2a are arranged side by side in parallel. The substrate 1c and the semiconductor substrate 2b are placed side by side in parallel.

The line 16a on the dielectric substrate 1a and the SPDT switch 3a on the semiconductor substrate 2a are connected by a metal wire 5e.
And the SPDT switch 3b on the semiconductor substrate 2b are connected by a metal wire 5f. Also, the dielectric substrate 1b
The upper line 6a and the SPDT switches 3a and 3b on the semiconductor substrates 2a and 2b are connected by metal wires 5a and 5b, and similarly, the line 6b on the dielectric substrate 1d and the SPDT switches 3a on the semiconductor substrates 2a and 2b. And 3b
Are connected by metal wires 5c and 5d.

Next, the operation will be described. The high-frequency signal input from the dielectric substrate 1a is input to the SPDT switch 3a formed on the semiconductor substrate 2a. The switching element 4a in the SPDT switch 3a is in a passing state, the switching element 4b in the SPDT switch 3a is in a blocking state, the switching element 4c in the SPDT switch 3b formed on the semiconductor substrate 2b is in a passing state, and the SPDT switch 3b.
SPDT when the switching element 4d in the
The high-frequency signal input to the switch 3a includes a switching element 4a, a metal wire 5a, a line 6a, a metal wire 5b,
A switching element 4c of the SPDT switch 3b, and
It is output via the dielectric substrate 1c.

Conversely, when the switching element 4b in the SPDT switch 3a is in the passing state, the SPDT switch 3a
The switching element 4a in the SPDT switch 3b is in the cut-off state, the switching element 4d in the SPDT switch 3b is in the passing state,
When the switching element 4c in the switch 3b is in the cutoff state, the high-frequency signal input to the SPDT switch 3a includes the switching element 4b, the metal wire 5c, the line 6b, the metal wire 5d, the switching element 4d of the SPDT switch 3b, and the dielectric. It is output via the substrate 1c.

Here, by changing the difference in length between the line 6a and the line 6b, it becomes possible to switch the passing phase by the difference in electrical length. For this switch,
As described above, this is performed by the SPDT switches 3a and 3b. In FIG. 1, the line 6a is replaced by the line 6b.
The length is longer.

As described above, in this embodiment, the SPDT switches 3a and 3b including a plurality of semiconductor elements are formed on the semiconductor substrates 2a and 2b, and the lines 6a and 6b which are passive circuits are formed on the dielectric substrate. By configuring on the 1b and 1d, the size of the semiconductor substrate can be reduced and the cost can be reduced.

Here, the dielectric substrate 1b on which the line 6a is formed and the dielectric substrate 1d on which the line 6b is formed have different sizes, and the difference between the lengths of the lines 6a and 6b is changed. By switching between them, the amount of phase shift can be changed, so that it is not necessary to recreate a semiconductor substrate that takes a long time to create, and it is possible to shorten the time required to make the semiconductor substrate and to use a different amount of phase shift. .

A plurality of SPs including a plurality of semiconductor elements
By configuring the DT switch on a semiconductor substrate and configuring the lines 6a and 6b, which are passive circuits, on a dielectric substrate, there is no need to connect semiconductor elements one by one.
Compared with the case where each semiconductor element is formed on a dielectric substrate, the number of assembling steps can be reduced, the assembling cost can be reduced, and the assembling time can be shortened.

Further, in this embodiment, since the dielectric substrate and the semiconductor substrate are composed of a plurality of each, the degree of freedom of the positional configuration of the combination thereof can be increased. Further, the size of the semiconductor substrate can be reduced without waste.

Embodiment 2 FIG. 2 is a circuit diagram showing a configuration of a microwave control circuit according to Embodiment 2 of the present invention. In the figure, reference numerals 7a and 7b denote filters formed on dielectric substrates 1b and 1d, and the filters 7a and 7b have different passing phases. Filters 7a and 7
For b, for example, one may be constituted by a high-pass filter and the other may be constituted by a low-pass filter.
Further, the filter 7a and the filter 7b are
a, 5b, 5c, and 5d through the semiconductor substrates 2a and 2d.
b connected to SPDT switches 3a and 3b. For other configurations, see the first embodiment.
Therefore, the same reference numerals are given and the description is omitted here.

Next, the operation will be described. The high-frequency signal input from the dielectric substrate 1a is input to the SPDT switch 3a formed on the semiconductor substrate 2a. The switching element 4a in the SPDT switch 3a is in the passing state, the switching element 4b in the SPDT switch 3a is in the cut-off state,
When the switching element 4c in the DT switch 3b is in the pass state and the switching element 4d in the SPDT switch 3b is in the cutoff state, the high-frequency signal input to the SPDT switch 3a includes the metal wire 5a, the filter 7a, the metal wire 5b, and the SPDT switch 3b. Are output through the dielectric substrate 1c.

On the contrary, when the switching element 4b in the SPDT switch 3a is in the passing state, the SPDT switch 3a
The switching element 4a in the SPDT switch 3b is in the cut-off state, the switching element 4d in the SPDT switch 3b is in the passing state,
When the switching element 4c in the switch 3b is in the cutoff state, the high-frequency signal input to the SPDT switch 3a is S
The high-frequency signal input to the PDT switch 3a is output via the metal wire 5c, the filter 7b, the metal wire 5d, the SPDT switch 3b, and the dielectric substrate 1c.

As described above, since the passing phases are different between the filter 7a and the filter 7b, the SPDT switch 3a
By switching these filters according to (a) and (b), it is possible to easily switch the passing phase.

As described above, also in this embodiment, the SPDT switches 3a and 3b including a plurality of semiconductor elements are formed on the semiconductor substrates 2a and 2b, and the filters 7a and 7b, which are passive circuits, are mounted on the dielectric substrate 1b. And 1
With the configuration of d, the size of the semiconductor substrate can be reduced and the price can be reduced.

The semiconductor substrate 2a, 2b is changed by changing the dielectric substrate 1b on which the filter 7a is formed and the dielectric substrate 1d on which the filter 7b is formed, and by changing the passing phase difference between the filter 7a and the filter 7b. Since the amount of phase shift can be changed without recreating the semiconductor substrate, it is not necessary to recreate the semiconductor substrate that requires a long time for the production, and it is possible to use a different amount of phase shift.

A plurality of SPs including a plurality of semiconductor elements
The DT switch is configured on a single semiconductor substrate, and the passive circuit filter is configured on a dielectric substrate. This reduces the number of assembling steps compared to the case where individual semiconductor elements are configured on a dielectric substrate. Cost and assembly time can be reduced.

Embodiment 3 FIG. 3 is a circuit diagram showing a configuration of a microwave control circuit according to Embodiment 3 of the present invention. In the figure, reference numeral 8 denotes an attenuation circuit formed on a dielectric substrate 1b. Reference numeral 6 denotes a line formed on the dielectric substrate 1d, which corresponds to the line 6b in the first and second embodiments. The attenuation circuit 8 is connected to the SPDT switches 3a and 3b formed on the semiconductor substrates 2a and 2b via metal wires 5a to 5d. Other configurations are the same as those in the above-described first and second embodiments, and thus description thereof is omitted here.

Next, the operation will be described. The high-frequency signal input from the dielectric substrate 1a is input to the SPDT switch 3a formed on the semiconductor substrate 2a. The switching element 4a in the SPDT switch 3a is in the passing state, the switching element 4b in the SPDT switch 3a is in the cut-off state,
When the switching element 4c in the DT switch 3b is in the pass state and the switching element 4d in the SPDT switch 3b is in the cutoff state, the high-frequency signal input to the SPDT switch 3a receives the metal wire 5a, the attenuation circuit 8, the metal wire 5
b, output via the SPDT switch 3b and the dielectric substrate 1c.

On the contrary, when the switching element 4b in the SPDT switch 3a is in the passing state, the SPDT switch 3a
The switching element 4a in the SPDT switch 3b is in the cut-off state, the switching element 4d in the SPDT switch 3b is in the passing state,
When the switching element 4c in the switch 3b is in the cutoff state, the high-frequency signal input to the SPDT switch 3a is S
The high-frequency signal input to the PDT switch 3a includes the metal wire 5c, the line 6, the metal wire 5d, and the SPDT switch 3.
b, output via the dielectric substrate 1c.

Here, since the transmission loss differs between the attenuation circuit 8 and the line 6, the transmission loss (amount of attenuation) can be switched.

As described above, in this embodiment, an SPDT switch including a plurality of semiconductor elements is formed on a semiconductor substrate, and an attenuating circuit, which is a passive circuit, is formed on a dielectric substrate. The size can be reduced and the price can be reduced.

Here, the dielectric substrate 1b on which the attenuation circuit 8 is formed and the dielectric substrate 1d on which the line 6 is formed are changed, and the difference in the passing amplitude between the attenuation circuit 8 and the line 6 is changed. Since the amount of attenuation can be changed without re-creating the substrates 2a and 2b, it is not necessary to re-create a semiconductor substrate that requires a long time to produce, and a different amount of attenuation can be obtained.

A plurality of SPs including a plurality of semiconductor elements
By configuring the DT switch on a single semiconductor substrate and configuring the attenuating circuit 8 as a passive circuit on a dielectric substrate, the number of assembly steps can be reduced as compared with a case where individual semiconductor elements are configured on a dielectric substrate. Thus, it is possible to reduce the assembly cost and the assembly time.

In this embodiment, since two SPDT switches are provided on one semiconductor element, the number of assembly steps can be reduced, and
The number of parts can be reduced, and the assembling time can be reduced.

In this embodiment, an example has been described in which the attenuation circuit 8 and the line 6 are switched by the SPDT switch. However, two attenuation circuits having different attenuation amounts may be provided and switched.

Embodiment 4 In the above-described first, second, and third embodiments, an example has been described in which two semiconductor substrates each including one SPDT switch are formed on a semiconductor substrate.
Even if a PDT switch is configured, the same effect can be obtained. FIG. 4 is a circuit diagram showing a configuration of a microwave control circuit according to Embodiment 4 of the present invention. In the figure, SPDT
The switch 3a and the SPDT switch 3b are formed on the same semiconductor substrate 2. Other configurations and operations are the same as those in the above-described first embodiment, and thus description thereof is omitted here.

Also in this embodiment, the SPDT switches 3a and 3b including a plurality of semiconductor elements are formed on the semiconductor substrate 2, and the lines 6a and 6b, which are passive circuits, are formed on the dielectric substrates 1b and 1d. Thus, the size of the semiconductor substrate can be reduced, and the cost can be reduced.

Here, the dielectric substrate 1b on which the line 6a is formed and the dielectric substrate 1d on which the line 6b is formed have different sizes, and the difference in length between the line 6a and the line 6b is changed. By switching between them, the amount of phase shift can be changed, so that it is not necessary to recreate a semiconductor substrate that takes a long time to create, and it is possible to shorten the time required to make the semiconductor substrate and to use a different amount of phase shift. .

A plurality of SPs including a plurality of semiconductor elements
The DT switches (two in this embodiment) are formed on one semiconductor substrate, and the line 6 is a passive circuit.
By configuring a and 6b on the dielectric substrate, it is not necessary to connect the semiconductor elements one by one, so that the number of assembling steps can be reduced as compared with the case where individual semiconductor elements are configured on the dielectric substrate, and the assembly cost can be reduced. The assembly time can be reduced.

Embodiment 5 FIG. In Embodiment 4 described above,
Although the two SPDT switches are arranged line-symmetrically on the semiconductor substrate 2A, the same effect can be obtained even if they are arranged point-symmetrically. FIG. 5 is a circuit diagram showing a configuration of a microwave control circuit according to Embodiment 5 of the present invention. In the figure, S
The PDT switch 3a and the SPDT switch 3b are arranged on the same semiconductor substrate 2 so as to be point-symmetric.
The SPDT switch 3a is, as in the above-described embodiment,
It has switching elements 4a and 4b, and its overall shape is substantially U-shaped as shown by the broken line in FIG. Similarly, the SPDT switch 3b has switching elements 4c and 4d, and the overall shape is substantially U-shaped as shown by the broken line in FIG.

Next, the operation will be described. The high-frequency signal input from the dielectric substrate 1a is input to the SPDT switch 3a formed on the semiconductor substrate 2A. The switching element 4a in the SPDT switch 3a is in a passing state, the switching element 4b in the SPDT switch 3a is in a blocking state, the switching element 4c in the SPDT switch 3b formed on the semiconductor substrate 2b is in a passing state, and the SPDT switch 3b.
SPDT when the switching element 4d in the
The high-frequency signal input to the switch 3a includes a switching element 4a, a metal wire 5a, a line 6a, a metal wire 5b,
A switching element 4c of the SPDT switch 3b, and
It is output via the dielectric substrate 1c.

On the contrary, when the switching element 4b in the SPDT switch 3a is in the passing state, the SPDT switch 3a
, The switching element 4a in the SPDT switch 3b is in the passing state,
When the switching element 4c in the switch 3b is in the cutoff state, the high-frequency signal input to the SPDT switch 3a includes the switching element 4b, the metal wire 5c, the line 6b, the metal wire 5d, the switching element 4d of the SPDT switch 3b, and the dielectric. It is output via the substrate 1c.

As described above, in this embodiment, the SPDT switches 3a and 3b including a plurality of semiconductor elements are formed on the semiconductor substrate 2A, and the lines 6a and 6b which are passive circuits are formed on the dielectric substrate 1b. By configuring on the 1d, the size of the semiconductor substrate can be reduced and the price can be reduced.

Here, the dielectric substrate 1b on which the line 6a is formed and the dielectric substrate 1d on which the line 6b is formed have different sizes, and the difference in length between the line 6a and the line 6b is changed. By switching between them, the amount of phase shift can be changed, so that it is not necessary to recreate a semiconductor substrate that takes a long time to create, and it is possible to shorten the time required to make the semiconductor substrate and to use a different amount of phase shift. .

A plurality of SPs including a plurality of semiconductor elements
By configuring the DT switch on a semiconductor substrate and configuring the lines 6a and 6b, which are passive circuits, on a dielectric substrate, there is no need to connect semiconductor elements one by one.
Compared with the case where each semiconductor element is formed on a dielectric substrate, the number of assembling steps can be reduced, the assembling cost can be reduced, and the assembling time can be shortened.

Embodiment 6 FIG. The first, second, third, fourth, and fifth embodiments described above.
Although the example in which the circuits switched by the two SPDT switches 3a and 3b are respectively formed on different dielectric substrates has been described, the same effect can be obtained by configuring them on one dielectric substrate. FIG. 6 is a circuit diagram showing a configuration of the microwave control circuit according to the sixth embodiment. In the figure, the line 6a and the line 6b are formed on the same dielectric substrate 1bB.

In this embodiment, as shown in FIG. 6, a semiconductor substrate 2B is provided between two dielectric substrates 1aB and 1bB. The long sides of these three substrates have the same length, and the short sides have different lengths. The three substrates are provided adjacent to each other in parallel so that the long sides are aligned with each other, and all three have a rectangular shape. As shown, SPDT switches 3a and 3b having two switching elements are provided on the semiconductor substrate 2B. SPDT switches 3a and 3b
Are connected to the lines 6a and 6b on the dielectric substrate 1bB via the metal wires 5a to 5d.

Next, the operation will be described. The high-frequency signal input from the upper side of FIG. 6 of the dielectric substrate 1aB is input to the SPDT switch 3a formed on the semiconductor substrate 2B. SP
Switching element 4a in DT switch 3a is in a passing state, switching element 4b in SPDT switch 3a is in a blocking state, switching element 4c in SPDT switch 3b formed on semiconductor substrate 2b is in a passing state, SPD
When the switching element 4d in the T switch 3b is in the cutoff state, the high frequency signal input to the SPDT switch 3a is
The signal is output via the switching element 4a, the metal wire 5a, the line 6a, the metal wire 5b, the switching element 4c of the SPDT switch 3b, and the dielectric substrate 1aB.

On the contrary, when the switching element 4b in the SPDT switch 3a is in the passing state, the SPDT switch 3a
The switching element 4a in the SPDT switch 3b is in the cut-off state, the switching element 4d in the SPDT switch 3b is in the passing state,
When the switching element 4c in the switch 3b is in the cutoff state, the high-frequency signal input to the SPDT switch 3a includes the switching element 4b, the metal wire 5c, the line 6b, the metal wire 5d, the switching element 4d of the SPDT switch 3b, and the dielectric. It is output via the substrate 1aB.

As described above, in this embodiment, the SPDT switches 3a and 3b including a plurality of semiconductor elements are formed on the semiconductor substrate 2B, and the lines 6a and 6b, which are passive circuits, are formed on the dielectric substrate 1bB. With this configuration, the size of the semiconductor substrate can be reduced, and the cost can be reduced.

In this case, by changing the length difference between the line 6a and the line 6b and switching between them, the amount of phase shift can be changed. In addition, the production time can be shortened, and different phase shift amounts can be obtained.

A plurality of SPs including a plurality of semiconductor elements
By configuring the DT switch on a semiconductor substrate and configuring the lines 6a and 6b, which are passive circuits, on a dielectric substrate, there is no need to connect semiconductor elements one by one.
Compared with the case where each semiconductor element is formed on a dielectric substrate, the number of assembling steps can be reduced, the assembling cost can be reduced, and the assembling time can be shortened.

Embodiment 7 In the sixth embodiment,
Although the example in which two SPDT switches are formed on one semiconductor substrate has been described, the same effect can be obtained by configuring three or more SPDT switches. FIG. 7 is a circuit diagram showing a configuration of a microwave control circuit according to Embodiment 7 of the present invention. SPDT switches 3a, 3b, 3c, 3
d is formed on the semiconductor substrate 2C.

In this embodiment, as shown in FIG. 7, a semiconductor substrate 2C is provided between two dielectric substrates 1aC and 1bC. The long sides of these three substrates have the same length, and the short sides have different lengths. The three substrates are provided adjacent to each other in parallel so that the long sides are aligned with each other, and all three have a rectangular shape. SPDT switch 3a on semiconductor substrate 2B
To 3d are lines 6a on the dielectric substrates 1aC and 1bC,
6b, 6c and 6d are connected via metal wires. In addition, the length of the line 6a and the line 6c is long, and the line 6b
And 6d have a shorter length, but all have different lengths.

Next, the operation will be described. The high-frequency signal input from the lower side of FIG. 7 of the semiconductor substrate 2C is input to the SPDT switch 3a formed on the semiconductor substrate 2B. SPD
The switching element 4a in the T switch 3a is in a passing state,
The switching element 4b in the SPDT switch 3a is turned off, and the switching element 4c in the SPDT switch 3b
Is in the passing state, the switching element 4d in the SPDT switch 3b is in the cut-off state, the switching element 4e in the SPDT switch 3c is in the passing state, the switching element 4f in the SPDT switch 3c is in the cut-off state, and the SPDT switch 3d.
, The switching element 4g in the SPDT switch 3d is in the passing state and the switching element 4h in the SPDT switch 3d is in the blocking state.
The high-frequency signal input to the SPDT switch 3a includes a switching element 4a, a metal wire, a line 6a, a metal wire,
The signal is output via the switching element 4c, the switching element 4e, the metal wire, the line 6c, and the switching element 4g. The description of the operation in the case where the passing / blocking states of these switching elements 4a to 4g are different from those just described will be omitted.

As described above, in this embodiment,
The high frequency signal passes through the lines 6a and 6c or the lines 6b and 6c
d, or lines 6a and 6d, or lines 6b and 6c
By switching the pass through the SPDT switches 3a to 3d, since the lengths of the lines 6a to 6d are different from each other, it is possible to switch the pass phase into four types by the difference in the electrical length.

As described above, in the present embodiment, the SPDT switches 3a to 3
By forming d on the semiconductor substrate 2C and forming the lines 6a to 6d, which are passive circuits, on the dielectric substrates 1aC and 1bC, the size of the semiconductor substrate can be reduced and the cost can be reduced.

In this case, by changing the length difference between the lines 6a to 6d and switching between them, the amount of phase shift can be changed. In addition, the production time can be shortened, and different phase shift amounts can be obtained.

A plurality of SPs including a plurality of semiconductor elements
By configuring the DT switch on a semiconductor substrate and configuring the lines 6a to 6d, which are passive circuits, on a dielectric substrate, it is not necessary to connect each semiconductor element, and each individual semiconductor element is configured on the dielectric substrate. As a result, the number of assembly steps can be reduced, the assembly cost can be reduced, and the assembly time can be reduced.

Embodiment 8 FIG. In the above-described sixth and seventh embodiments, the example has been described in which the lines switched by the same SPDT switch provided on one semiconductor substrate are formed on the same dielectric substrate. However, the lines are switched by different SPDT switches. The same effect can be obtained even if the lines are formed on the same dielectric substrate. FIG. 8 is a circuit diagram showing one example of the microwave control circuit according to the embodiment of the present invention.

In this embodiment, as shown in FIG. 8, a semiconductor substrate 2D is provided between two dielectric substrates 1aD and 1bD. The long sides of these three substrates have the same length, and the short sides have different lengths. The three substrates are provided adjacent to each other in parallel so that the long sides are aligned with each other, and all three have a rectangular shape. On the semiconductor substrate 2D, six SPDT switches 3a to 3f each having two switching elements
Are arranged in a row in the longitudinal direction of the semiconductor substrate 2D. On the dielectric substrate 1aD, three lines 6a, 6c, 6 are provided at a ratio of one for two SPDT switches.
e is provided. Similarly, 3 on the dielectric substrate 1bD.
Two lines 6b, 6d, 6f are provided. SPDT
The switches 3a and 3b are connected to the lines 6a and 6b via metal wires. Similarly, the SPDT switches 3c and 3d are connected to the lines 6c and 6d via metal wires, and the SPDT switches 3e and 3f are connected to the lines 6e and 6f via metal wires. The lengths of the lines 6a, 6b, 6d, 6f are short,
The length of the line 6e is long, and the length of the line 6c is configured to be an intermediate length, but all have different lengths. By switching the input high-frequency signal through any of these lines by using the SPDT switches 3a to 3f, the passing phase can be switched in eight ways.

As described above, in this embodiment, the SPDT switches 3a to 3
By configuring f on the semiconductor substrate 2D and configuring the lines 6a to 6f, which are passive circuits, on the dielectric substrates 1aD and 1bD, the size of the semiconductor substrate can be reduced and the cost can be reduced.

Further, since the phase difference can be changed by changing the length difference between the lines 6a to 6f and switching between them, there is no need to recreate a semiconductor substrate which takes a long time to make. In addition, the production time can be shortened, and different phase shift amounts can be obtained.

A plurality of SPs including a plurality of semiconductor elements
By configuring the DT switch on the semiconductor substrate and configuring the passive circuits, that is, the lines 6a to 6f, on the dielectric substrate, it is not necessary to connect the semiconductor elements one by one, and the individual semiconductor elements are configured on the dielectric substrate. As a result, the number of assembly steps can be reduced, the assembly cost can be reduced, and the assembly time can be reduced.

Embodiment 9 In the first, second, third, fourth, fifth, sixth, and seventh embodiments, the dielectric substrate and the semiconductor substrate are coplanar. However, the same effect can be obtained even if the semiconductor substrate is formed on a dielectric substrate.
9 is a perspective view showing a configuration of a microwave control circuit according to Embodiment 9 of the present invention. FIG. 10 is a side view showing a combination of a dielectric substrate and a semiconductor substrate. FIG. 11 is a plan view of the dielectric substrate. 12 is a plan view of the semiconductor substrate. In the figure, a semiconductor substrate 2E is formed on a dielectric substrate 1E, and the lines of the semiconductor substrate 2E and the lines of the dielectric substrate 1E are connected by metal wires 5a, 5b, 5c, 5d, 5e, and 5f. .

Next, the operation will be described. The high-frequency signal input from the line 16a of the dielectric substrate 1E is input to the SPDT switch 3a formed on the semiconductor substrate 2E. SP
Switching element 4a in DT switch 3a is in a passing state, switching element 4b in SPDT switch 3a is in a blocking state, switching element 4c in SPDT switch 3b formed on semiconductor substrate 2b is in a passing state, SPD
When the switching element 4d in the T switch 3b is in the cutoff state, the high frequency signal input to the SPDT switch 3a is
The signal is output via the switching element 4a, the metal wire 5b, the line 6a, the metal wire 5c, the switching element 4c of the SPDT switch 3b, and the dielectric substrate 1E.

On the contrary, when the switching element 4b in the SPDT switch 3a is in the passing state, the SPDT switch 3a
The switching element 4a in the SPDT switch 3b is in the cut-off state, the switching element 4d in the SPDT switch 3b is in the passing state,
When the switching element 4c in the switch 3b is in the cutoff state, the high-frequency signal input to the SPDT switch 3a includes the switching element 4b, the metal wire 5e, the line 6b, the metal wire 5f, the switching element 4d of the SPDT switch 3b, and the dielectric. Output via the substrate 1E.

Here, by changing the difference in length between the line 6a and the line 6b, it becomes possible to switch the passing phase by the difference in electrical length. For this switch,
As described above, this is performed by the SPDT switches 3a and 3b. 9 to 12, the line 6a is longer than the line 6b.

As described above, in this embodiment, the SPDT switches 3a and 3b including a plurality of semiconductor elements are formed on the semiconductor substrate 2E, and the lines 6a and 6b which are passive circuits are formed on the dielectric substrate 1E. With this configuration, the size of the semiconductor substrate can be reduced, and the cost can be reduced.

Further, here, by changing the length difference between the line 6a and the line 6b and switching between them, the amount of phase shift can be changed. In addition, the production time can be shortened, and different phase shift amounts can be obtained.

A plurality of SPs including a plurality of semiconductor elements
By configuring the DT switch on a semiconductor substrate and configuring the lines 6a and 6b, which are passive circuits, on a dielectric substrate, there is no need to connect semiconductor elements one by one.
Compared with the case where each semiconductor element is formed on a dielectric substrate, the number of assembling steps can be reduced, the assembling cost can be reduced, and the assembling time can be shortened.

Further, since the semiconductor substrate is mounted on the dielectric substrate and configured in a three-dimensional manner, the bottom area can be reduced and the size can be reduced.

Embodiment 10 In the ninth embodiment, the semiconductor substrate is formed on the dielectric substrate and connected therebetween by the metal wire. However, the same effect can be obtained by connecting with the metal bump. FIG. 13 shows Embodiment 1 of the present invention.
0 is a perspective view showing the configuration of the microwave control circuit according to FIG. 14, FIG. 14 is a side view showing a combination of a dielectric substrate and a semiconductor substrate,
FIG. 15 is a plan view of a dielectric substrate, and FIG. 16 is a plan view of a semiconductor substrate. In the figure, 9a and 9b are metal bumps. The semiconductor substrate 2E includes switching elements 4a, 4b, 4
The semiconductor chip 2E is mounted on the semiconductor substrate 2E so that the surface on which the semiconductor layers 2c and 4d are formed faces the dielectric substrate 1E.
And the line of the dielectric substrate 1E are formed of metal bumps 9a and 9b.
Connected at Other configurations and operations are the same as those in the above-described ninth embodiment, and a description thereof will not be repeated. In this embodiment, the same effects as those of the ninth embodiment can be obtained by adopting the above-described configuration.

Further, since the semiconductor substrate is mounted on the dielectric substrate and configured in a three-dimensional manner, the bottom area can be reduced, the size can be reduced, and furthermore, this embodiment can be implemented. In the embodiment, since all the surfaces on which the circuits are formed are located inside, it is difficult to receive external physical stress, and the reliability can be improved.

Embodiment 11 FIG. In the above-described tenth embodiment, an example in which two SPDT switches are formed on the same semiconductor substrate has been described. However, the same effect can be obtained by configuring three or more SPDT switches. FIG. 17 is a plan view showing a configuration of a microwave control circuit according to Embodiment 11 of the present invention, FIG. 18 is a plan view of a semiconductor substrate 2F, and FIG. 19 is a plan view of a dielectric substrate 1F. Semiconductor substrate 2F
Is similar to that of the semiconductor substrate 2D shown in FIG. 8, and the description is omitted here. Further, the structure of the dielectric substrate 1F shown in FIG.
All of the lines 6a to 6f provided on D and 1bD correspond to those provided on one dielectric substrate 1F as shown in FIG. Further, the line of the semiconductor substrate 2F and the line of the dielectric substrate 1F may be connected by a metal wire as shown in the ninth embodiment, or may be connected by a metal bump as shown in the tenth embodiment. It may be. Other configurations and operations are the same as those in the above-described eighth to tenth embodiments, and thus description thereof is omitted here. In addition, also in this embodiment, by adopting the configuration described above,
The same effects as in the eighth embodiment can be obtained.

Embodiment 12 FIG. FIG. 20 is a plan view of a semiconductor substrate showing a configuration of a microwave control circuit according to Embodiment 12 of the present invention. In the figure, reference numeral 10 denotes an electrode (connection terminal). The electrode 10 is connected to a line on a dielectric substrate (not shown) via a metal bump. The electrode 10 is arranged so that its center position is point-symmetrical on a circle drawn from the center of the semiconductor substrate 2G. I have. As a result, the force applied to the metal bumps between the semiconductor substrate and the dielectric substrate is evenly dispersed, and the characteristics of the connection part by each metal bump can be kept constant. The other configuration is the same as that of the above-described tenth embodiment, and the description is omitted here.

As described above, in this embodiment, since the electrodes 10 are provided so as to be evenly arranged on the circumference as shown in FIG. 20, the electrodes 10 are placed on the metal bumps between the semiconductor substrate and the dielectric substrate. The force is evenly distributed, the characteristics of the connection part by each metal bump can be kept constant, and the same effects as in the tenth embodiment can be obtained.

Embodiment 13 FIG. FIG. 21 is a plan view showing a configuration of a microwave control circuit according to Embodiment 13 of the present invention. In the figure, 1b and 1d are dielectric substrates,
2, 2H is a semiconductor substrate. The configurations of the semiconductor substrate 2 and the dielectric substrates 1b and 1d are the same as those of FIG. 4, and thus the description is omitted here. The semiconductor substrate 2H has four SPDT switches 3c, 3d, 3
e and 3f are arranged in a line in the longitudinal direction of the substrate. Also, four filters 7a, 7b, 7c, 7d
Is provided. The filters 7a and 7b are connected to the SPDT switches 3c and 3d as shown in FIG.
Similarly, the filters 7d and 7c are, as shown in FIG.
They are connected to T switches 3e and 3f. Note that the SPDT switches 3e to 3f and the filters 7a to 7d provided on the semiconductor substrate 2H correspond to a 2-bit M
The MIC phase shifter 12 is configured.

As described above, in this embodiment, two SPDT switches are provided on one semiconductor substrate 2 and the MMIC phase shifter 12 is provided on another semiconductor substrate 2H. Since the line which is a passive circuit is provided on the dielectric substrate 1b, the same effects as those of the first to tenth embodiments can be obtained.

In this embodiment, an example in which the MMIC phase shifter is combined with a phase shifter combining an SPDT switch and a line has been described. However, the phase shifter and the variable attenuator, and the variable attenuator and the variable attenuator are combined. The same effect can be obtained by combining an attenuator.

Embodiment 14 FIG. In the thirteenth embodiment, the semiconductor substrate 2H provided with the MMIC phase shifter 12 and the SP
Although the semiconductor substrate 2 provided with the DT switches 3a and 3b is separated, the same effect can be obtained by using an MMIC in which the MMIC phase shifter and the SPDT switch are formed on the same semiconductor substrate. FIG. 22 is a plan view showing a configuration of a microwave control circuit according to Embodiment 14 of the present invention.

In this embodiment, as shown in FIG. 22, the SPDT switches 3a, 3b provided on the semiconductor substrate 2I and the semiconductor substrate 2H shown in the above-described embodiment 13 on one semiconductor substrate 2I. And a device equivalent to the MMIC phase shifter 12. Other configurations and operations are the same as those of the above-described thirteenth embodiment, and a description thereof will not be repeated. In this embodiment, the same effects as those in the first to thirteenth embodiments can be obtained.

Embodiment 15 FIG. Embodiments 1 to 14 above
In the above, the case where an inductor is loaded in parallel with the semiconductor element as the SPDT switch is shown, but the same effect can be obtained with another type of SPDT switch. FIG.
FIG. 3 is a plan view of a semiconductor substrate when a series-parallel switch is used as an SPDT switch.

In this embodiment, as shown in FIG. 23, two SPDT switches 3aA and 3bA having switching elements 4a to 4g connected in series and parallel are provided on a semiconductor substrate 2J. Each SPDT
Each of the switches 3aA and 3bA is provided with four switching elements. Further, the electrodes 10 are provided radially evenly along the sides of the substrate 2J. The electrode 10 is connected to the line on the dielectric substrate via the metal bump, but by uniformly arranging the electrode 10 radially, the force applied to the metal bump between the semiconductor substrate and the dielectric substrate becomes uniform. It is dispersed, and the characteristics of the connection part by each metal bump can be kept constant.

In this embodiment, two lines having different lengths are provided on a dielectric substrate, as in the above-described embodiment, and these lines are provided by SPDT switches 3aA and 3bA on a semiconductor substrate 2J. Since the switching is performed, the same effects as those in the first to fourteenth embodiments can be obtained.

Embodiment 16 FIG. Embodiments 1 to 1 above
5, the SPDT switch is formed on the semiconductor substrate. However, the same effect can be obtained even if only a plurality of switching elements (semiconductor elements) used for the SPDT switch are formed on the same semiconductor substrate. FIG. 24 is a plan view of a semiconductor substrate in a case where four switching elements 4a to 4d used for two SPDT switches are formed on one semiconductor substrate. The other components constituting the SPDT switch, the lines constituting the passive circuit, the filter, the attenuation circuit, and the like may be provided on a dielectric substrate (not shown).

In this embodiment, since only the switching element is provided on the semiconductor substrate, the size of the semiconductor substrate can be further reduced, and the cost can be reduced. Also, passive circuits such as lines are provided on a dielectric substrate and are switched by the SPDT switch.
The same effect as that of No. 15 can be obtained.

[0102]

According to the present invention, a dielectric substrate, a semiconductor substrate, and at least two passive circuits provided on the dielectric substrate are different in any one of a phase shift amount and an attenuation amount. Since the passive circuit and the SPDT switch provided on the semiconductor substrate for switching the passive circuit are provided, and the passive circuit is formed on another substrate, the size of the expensive semiconductor substrate can be reduced. Since the SPDT switch can be used to change the amount of phase shift or attenuation, it is not necessary to re-create a semiconductor substrate which takes a long time when redesigning. In addition, the number of assembling steps can be reduced, the assembly cost can be reduced, and the assembling time can be reduced as compared with a case where individual semiconductor elements are formed on a dielectric substrate. It can be achieved.

Since the dielectric substrate and the semiconductor substrate are formed on the same plane, they can be easily connected by metal wires.

Further, since the semiconductor substrate is mounted on the dielectric substrate, the three-dimensional configuration allows the bottom area to be reduced, and the size can be reduced.

Further, at least two passive circuits include:
Since it is composed of at least two lines having different lengths, it can be easily formed. Further, since the passing phase is changed by changing the length, the passing phase can be easily and inexpensively adjusted. be able to.

Further, at least two passive circuits include:
Since it is composed of at least two filters having different phase shift amounts, for example, if one is composed of a high-pass filter and the other is composed of a low-pass filter, it can be easily produced.

Further, at least two passive circuits include:
Since it is composed of lines and attenuation circuits having different attenuation amounts, by switching these, the attenuation amount can be easily switched.

Also, at least two passive circuits are:
Since it is composed of at least two of the line, the filter, and the attenuation circuit, the phase shift amount and the attenuation amount can be easily switched by switching these.

Also, since there are a plurality of SPDT switches and a plurality of semiconductor substrates, and the SPDT switches are provided on separate semiconductor substrates, the number of semiconductor substrates is plural, so that the size of the semiconductor substrate can be reduced without waste. The effect of reducing the size and increasing the degree of freedom can be obtained.

Also, there are a plurality of SPDT switches,
Since the plurality of SPDT switches are all provided on the same semiconductor substrate, the manufacturing process is simplified and the number of components can be reduced.

Also, since the semiconductor chip is mounted on a flip chip so that the surface on which the SPDT switch is formed faces the surface of the dielectric substrate on which the passive circuit is formed, it can be easily connected by metal bumps. Since the surface of each substrate on which the circuit is provided is on the inside, the structure is less susceptible to external physical stress, and the reliability can be improved.

Further, since the semiconductor device further includes connection terminals radially arranged on a circumference centered on the center of the semiconductor substrate, the force applied to the connection member between the semiconductor substrate and the dielectric substrate is uniformly dispersed, The characteristics of the connection portion can be kept constant, and the reliability can be improved.

Further, since at least one of a one-bit phase shifter and an attenuator provided on a semiconductor substrate is further provided, the phase shift amount and the attenuation amount can be adjusted over a wide range and in a fine range. become.

[Brief description of the drawings]

FIG. 1 is a plan view showing a configuration of a microwave control circuit according to a first embodiment of the present invention.

FIG. 2 is a plan view showing a configuration of a microwave control circuit according to a second embodiment of the present invention.

FIG. 3 is a plan view showing a configuration of a microwave control circuit according to a third embodiment of the present invention.

FIG. 4 is a plan view showing a configuration of a microwave control circuit according to a fourth embodiment of the present invention.

FIG. 5 is a plan view showing a configuration of a microwave control circuit according to a fifth embodiment of the present invention.

FIG. 6 is a plan view showing a configuration of a microwave control circuit according to a sixth embodiment of the present invention.

FIG. 7 is a plan view showing a configuration of a microwave control circuit according to a seventh embodiment of the present invention.

FIG. 8 is a plan view showing a configuration of a microwave control circuit according to an eighth embodiment of the present invention.

FIG. 9 is a perspective view showing a configuration of a microwave control circuit according to Embodiment 9 of the present invention.

FIG. 10 is a side view showing a configuration of a microwave control circuit according to a ninth embodiment of the present invention.

FIG. 11 is a plan view showing a configuration of a dielectric substrate of a microwave control circuit according to Embodiment 9 of the present invention.

FIG. 12 is a plan view showing a configuration of a semiconductor substrate of a microwave control circuit according to Embodiment 9 of the present invention.

FIG. 13 is a perspective view showing a configuration of a microwave control circuit according to a tenth embodiment of the present invention.

FIG. 14 is a side view showing a configuration of a microwave control circuit according to a tenth embodiment of the present invention.

FIG. 15 is a plan view showing a configuration of a dielectric substrate of a microwave control circuit according to a tenth embodiment of the present invention.

FIG. 16 is a plan view showing a configuration of a semiconductor substrate of a microwave control circuit according to a tenth embodiment of the present invention.

FIG. 17 is a plan view showing a configuration of a microwave control circuit according to an eleventh embodiment of the present invention.

FIG. 18 is a plan view showing a configuration of a semiconductor substrate of a microwave control circuit according to Embodiment 11 of the present invention.

FIG. 19 is a plan view showing a configuration of a dielectric substrate of a microwave control circuit according to Embodiment 11 of the present invention.

FIG. 20 is a plan view showing a configuration of a semiconductor substrate of a microwave control circuit according to a twelfth embodiment of the present invention.

FIG. 21 is a plan view showing a configuration of a microwave control circuit according to Embodiment 13 of the present invention.

FIG. 22 is a plan view showing a configuration of a microwave control circuit according to a fourteenth embodiment of the present invention.

FIG. 23 is a plan view showing a configuration of a semiconductor substrate of a microwave control circuit according to Embodiment 15 of the present invention.

FIG. 24 is a plan view showing a configuration of a semiconductor substrate of a microwave control circuit according to Embodiment 16 of the present invention.

FIG. 25 is a plan view showing a configuration of a conventional microwave control circuit.

FIG. 26 is a cross-sectional view showing a configuration of another conventional microwave control circuit.

FIG. 27 is a plan view showing a configuration of the conventional microwave control circuit of FIG. 26;

[Explanation of symbols]

1a, 1b, 1c, 1d Dielectric substrate, 2a, 2b Semiconductor substrate, 3a, 3b SPDT switch, 4a, 4b,
4c, 4d switching element, 5a, 5b, 5c, 5
d metal wire, 6a, 6b line, 7a, 7b filter, 8 attenuation circuit, 9 metal bump, 110a, 11
0b Matching circuit, 121a, 121b bias circuit.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Kensuke Nakajima 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Mitsui Electric Co., Ltd. (72) Inventor Kenji Suematsu 2-3-2 Marunouchi, Chiyoda-ku, Tokyo 3 Rishi Electric Co., Ltd. (72) Inventor Nao Takagi 2-3-2 Marunouchi, Chiyoda-ku, Tokyo F-term (reference) 5J012 BA03 GA13 5J013 AA06

Claims (12)

[Claims] 1. A dielectric substrate, a semiconductor substrate connected to the dielectric substrate, and at least two passive circuits provided on the dielectric substrate, wherein any one of a phase shift amount and an attenuation amount is provided. A microwave control circuit, comprising: a passive circuit that is different from one another; and an SPDT switch that is provided on the semiconductor substrate and switches the passive circuit. 2. The microwave control circuit according to claim 1, wherein said dielectric substrate and said semiconductor substrate are formed on the same plane. 3. The microwave control circuit according to claim 1, wherein said semiconductor substrate is mounted on said dielectric substrate. 4. The at least two passive circuits,
4. The microwave control circuit according to claim 1, comprising at least two lines having different lengths. 5. The at least two passive circuits,
4. The microwave control circuit according to claim 1, comprising at least two filters having different phase shift amounts. 6. The at least two passive circuits,
The microwave control circuit according to any one of claims 1 to 3, wherein the microwave control circuit comprises a line and an attenuation circuit having different attenuation amounts. 7. The at least two passive circuits,
4. The microwave control circuit according to claim 1, wherein the microwave control circuit comprises at least one of a line, a filter, and an attenuation circuit. 8. The semiconductor device according to claim 1, wherein a plurality of said SPDT switches and said semiconductor substrate are provided, and said SPDT switches are provided on separate semiconductor substrates. Microwave control circuit. 9. The microcontroller according to claim 1, wherein there are a plurality of said SPDT switches, and said plurality of SPDT switches are all provided on the same semiconductor substrate. Wave control circuit. 10. The flip-chip mounting method according to claim 3, wherein the surface of the semiconductor substrate on which the SPDT switch is formed faces the surface of the dielectric substrate on which the passive circuit is formed. Microwave control circuit. 11. The microwave control circuit according to claim 1, further comprising connection terminals radially arranged on a circumference centered on the center of said semiconductor substrate. 12. The microwave control according to claim 1, further comprising at least one of a phase shifter and an attenuator of at least one bit provided on the semiconductor substrate. circuit.