JP3886033B2 - Surface acoustic wave device - Google Patents

Surface acoustic wave device Download PDF

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Publication number
JP3886033B2
JP3886033B2 JP2001292612A JP2001292612A JP3886033B2 JP 3886033 B2 JP3886033 B2 JP 3886033B2 JP 2001292612 A JP2001292612 A JP 2001292612A JP 2001292612 A JP2001292612 A JP 2001292612A JP 3886033 B2 JP3886033 B2 JP 3886033B2
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Prior art keywords
surface acoustic
acoustic wave
electrode
resonator
mounting substrate
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JP2003101374A (en
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正洋 中野
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TDK Corp
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TDK Corp
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Priority to JP2001292612A priority Critical patent/JP3886033B2/en
Priority to DE60229821T priority patent/DE60229821D1/en
Priority to EP02021467A priority patent/EP1296453B1/en
Priority to US10/253,991 priority patent/US7151310B2/en
Publication of JP2003101374A publication Critical patent/JP2003101374A/en
Priority to US11/480,500 priority patent/US7304377B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15172—Fan-out arrangement of the internal vias
    • H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15192—Resurf arrangement of the internal vias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Description

【０００１】
【発明の属する技術分野】
本発明は、弾性表面波素子が用いられた弾性表面波装置に関するものである。
【０００２】
【従来の技術】
今日、目覚ましい普及を見せている携帯電話に代表される移動体通信機器は、小型化が急速に進められている。それに伴って、移動体通信機器に使用される部品には、小型化および高性能化が要求されている。
【０００３】
ここで、移動体通信機器における信号の分岐、生成を行うために、分波器が用いられている。分波器は、帯域通過フィルタ、帯域阻止フィルタ、あるいはこれらの組み合わせにより構成されたものがあるが、一層の小型化および高性能化を達成するために、弾性表面波素子が用いられたものがある。
【０００４】
相互に異なる帯域中心周波数を有する２つの弾性表面波素子を用いて分波器を構成する場合、互いのフィルタ特性が干渉し合わないようにするため、それぞれの素子には位相整合用回路が設けられる。また、より大きな出力を得るために、弾性表面波素子の構成要素の一つである共振器には、反射器が設けられる。
【０００５】
【発明が解決しようとする課題】
このような弾性表面波素子が用いられた分波器パッケージにおいては、動作時に素子が高温になり、大きな熱抵抗が発生する。
【０００６】
すると、所期の動作特性を得られなくなる場合が生じ、動作の安定性が損なわれてしまう。
【０００７】
ここで、分波器パッケージに放熱用フィンを設けることも考えられるが、これではパッケージが大型化して、市場の要請にそぐわなくなる。
【０００８】
そして、このような問題は、分波器パッケージのみならず、広く弾性表面波装置全般に当てはまる問題である。
【０００９】
そこで、本発明は、パッケージを大型化することなく弾性表面波素子の放熱を効率よく行うことのできる弾性表面波装置を提供することを目的とする。
【００１０】
【課題を解決するための手段】
上記課題を解決するため、本発明に係る弾性表面波装置は、所定の帯域中心周波数を有する弾性表面波素子および前記弾性表面波素子がフリップチップ実装にて搭載される実装基板を備えた弾性表面波装置であって、前記弾性表面波素子は、所定周波数の弾性表面波に共振する共振器と、前記共振器と前記実装基板とを電気的に接続し、前記共振器の電気的動作に関係する第１の電極と、前記実装基板に形成された電位不定の配線と電気的に接続され、前記共振器の電気的動作に関係しない第２の電極とを有し、前記第２の電極は、前記共振器に設けられて弾性表面波を反射する反射器と電気的に接続されていることを特徴とする弾性表面波装置。
【００１１】
このような発明によれば、弾性表面波素子の動作時に発生する熱は第２の電極を通って実装基板の当該配線に伝搬されて放熱されることになるので、パッケージを大型化することなく弾性表面波素子の放熱を効率よく行うことが可能になる。
また、このような第２の電極は反射器と電気的に接続されているので、弾性表面波素子の動作時に最も高温になる反射器の放熱を効率よく行うことが可能になる。
【００１２】
【発明の実施の形態】
以下、本発明の実施の形態を、図面を参照しつつさらに具体的に説明する。ここで、添付図面において同一の部材には同一の符号を付しており、また、重複した説明は省略されている。なお、発明の実施の形態は、本発明が実施される特に有用な形態としてのものであり、本発明がその実施の形態に限定されるものではない。
【００１３】
図１は本発明の一実施の形態である分波器の構成を示すブロック図、図２は図１の分波器の特性図、図３は本発明の一実施の形態である分波器パッケージを示す断面図、図４は本発明の一実施の形態である分波器パッケージの構成要素である弾性表面波素子の構成を示すブロック図である。
【００１４】
図１に示す分波器において、２つの弾性表面波フィルタ素子（弾性表面波素子）Ｆ１ ，Ｆ２ は、図２に示すように相互に異なる帯域中心周波数ｆ１ ，ｆ２ を有している。そして、このような弾性表面波フィルタ素子Ｆ１ ，Ｆ２ により分波器を構成するために、各弾性表面波フィルタ素子Ｆ１ ，Ｆ２ のフィルタ特性の干渉を排除する位相整合用回路Ｐ１ ，Ｐ２ が設けられている。
【００１５】
そして、共通端子Ｔ１ ，Ｔ２ に対して位相整合用回路Ｐ１ ，Ｐ２ がそれぞれ接続され、さらにこの位相整合用回路Ｐ１ ，Ｐ２ に弾性表面波フィルタ素子Ｆ１ ，Ｆ２ がそれぞれ接続されている。また、各弾性表面波フィルタ素子Ｆ１，Ｆ２ には、分波された信号の入出力端子Ｓ１ ，Ｓ２ が接続されている。
【００１６】
このような分波器パッケージ（弾性表面波装置）１０は、図３に示すように、前述した２つの弾性表面波フィルタ素子Ｆ１ ，Ｆ２ が搭載された素子搭載層１１ａが最上層に位置しており、この素子搭載層１１ａから下層に向かって、接地電極の形成された接地層１１ｂ、位相整合用回路Ｐ１ ，Ｐ２ などの高周波回路の形成された回路形成層１１ｃ、および共通接地電極や外部接続端子１２が形成された基板接続層１１ｄが位置しており、これらは相互に接続されて積層構造をなす実装基板１１を形成している。
【００１７】
なお、実装基板１１は、セラミックあるいは樹脂で構成されている。
【００１８】
そして、弾性表面波フィルタ素子Ｆ１ ，Ｆ２ はキャップ１６により気密封止されており、全体としてパッケージ化されている。
【００１９】
なお、本実施の形態では、実装基板１１は４層となっているが、１層あるいは４層以外の複数層であってもよい。
【００２０】
ここで、実装基板１１の各層間はスルーホールやビアホール、あるいは側面に形成された側壁配線などの配線１５で適宜電気的に接続され、層表面にはマイクロストリップラインなどの配線１５が形成されている。
【００２１】
図４に示すように、分波器のパッケージ１０の構成要素である弾性表面波フィルタ素子Ｆ１ ，Ｆ２ は、所定周波数の弾性表面波に共振する共振器１７を備えている。この共振器１７には、共振器１７と実装基板１１とを電気的に接続し、共振器１７の電気的動作に関係する電極である入力電極（第１の電極）１８、出力電極（第１の電極）１９および接地電極（第１の電極）２０が配線２１を介して接続されている。
【００２２】
また、実装基板１１に形成されて単に引き回されただけで電位不定の配線と接続され、共振器１７の電気的動作には関係しない放熱電極（第２の電極）２２、つまりダミー電極が形成されている。ここで、電位不定の配線とは、具体的には、入出力の配線および実装基板１１の接地電極と接続された配線以外の配線をいう。
【００２３】
なお、電極１８，１９，２０，２２と実装基板１１とは、電極１８，１９，２０，２２を図３に示す突起電極１４とし、超音波によりバンプ接続される。
【００２４】
ここで、共振器１７は、電界により弾性表面波を発生したり、この弾性表面波を電気信号に変換する交差指状（櫛の歯状）の電極１７ａと、弾性表面波を反射する反射器１７ｂとから構成されている。
【００２５】
そして、一部の放熱電極２２は、反射器１７ｂと直接に、あるいは配線２１を介して電気的に接続されている。また、他の放熱電極２２は、共振器１７および電極１８，１９，２０から独立して設けられている。
【００２６】
なお、前述のように、放熱電極２２は共振器１７の電気的動作には関係しない電極であることから、放熱電極２２と反射器１７ｂとが電気的に接続されていても、放熱電極２２に電気信号が流れることはない。また、放熱電極２２は、反射器１７ｂと電気的に接続されている形態のものだけでもよく、共振器１７および電極１８，１９，２０から独立して設けられている形態のものだけでもよい。
【００２７】
本実施の形態の分波器パッケージ１０は次のようにして製造される。
【００２８】
先ず、各層１１ａ〜１１ｄを構成する基板材料に、薄膜形成技術を用いて所定の回路パターンや配線パターンを形成する。そして、これを相互に位置合わせして接着し、積層構造のパッケージを構成する。
【００２９】
次に、弾性表面波フィルタ素子Ｆ１ ，Ｆ２ を素子搭載層１１ａに超音波により実装し、キャップ１６を用いて弾性表面波フィルタ素子Ｆ１ ，Ｆ２ を気密封止する。
【００３０】
以上説明した分波器パッケージ１０によれば、前述のように、弾性表面波フィルタ素子Ｆ１ ，Ｆ２ には、実装基板１１に形成された入出力以外の配線と電気的に接続されて共振器１７の電気的動作に関係しない放熱電極２２が形成されている。
【００３１】
したがって、素子動作時に発生する熱は、放熱電極２２を通って実装基板１１の当該配線に伝搬され、これにより放熱が行われる。これにより、パッケージを大型化することなく弾性表面波フィルタ素子Ｆ１ ，Ｆ２ の放熱を効率よく行うことが可能になる。
【００３２】
そして、特に放熱電極２２を反射器１７ｂと電気的に接続した場合には、弾性表面波フィルタ素子Ｆ１ ，Ｆ２ の動作時に高温になる反射器１７ｂの放熱を効率よく行うことが可能になる。
【００３３】
なお、以上の説明は、本発明を分波器パッケージ１０に適用した例が示されているが、本発明は分波器パッケージ１０に限定されるものではなく、弾性表面波フィルタ素子、つまり弾性表面波素子が１個あるいは複数個搭載された種々の弾性表面波フィルタ装置などの弾性表面波装置に適用することが可能である。したがって、本発明の適用範囲はフィルタに限定されるものではなく、フィルタ以外の種々の分野に適用することができる。
【００３４】
【発明の効果】
以上の説明から明らかなように、本発明によれば以下の効果を奏することができる。
【００３５】
(1).弾性表面波素子には、実装基板に形成された入出力信号の流れない配線と電気的に接続されて共振器の電気的動作に関係しない第２の電極が形成されているので、素子動作時に発生する熱は第２の電極を通って実装基板の当該配線に伝搬されて放熱されることになり、パッケージを大型化することなく弾性表面波素子の放熱を効率よく行うことが可能になる。
【００３６】
(2).特に放熱電極を反射器と電気的に接続すれば、弾性表面波素子の動作時に高温になる反射器の放熱を効率よく行うことが可能になる。
【図面の簡単な説明】
【図１】本発明の一実施の形態である分波器の構成を示すブロック図である。
【図２】図１の分波器の特性図である。
【図３】本発明の一実施の形態である分波器パッケージを示す断面図である。
【図４】本発明の一実施の形態である分波器パッケージの構成要素である弾性表面波素子の構成を示すブロック図である。
【符号の説明】
１０ 分波器パッケージ（弾性表面波装置）
１１ 実装基板
１１ａ 素子搭載層
１１ｂ 接地層
１１ｃ 回路形成層
１１ｄ 基板接続層
１２ 外部接続端子
１３ キャップ
１４ 突起電極
１５ 配線
１７ 共振器
１８ 入力電極（第１の電極）
１９ 出力電極（第１の電極）
２０ 接地電極（第１の電極）
２１ 配線
２２ 放熱電極（第２の電極）
Ｆ１ ，Ｆ２ 弾性表面波フィルタ素子（弾性表面波素子）
Ｐ１ ，Ｐ２ 位相整合用回路
Ｓ１ ，Ｓ２ 入出力端子
Ｔ１ ，Ｔ２ 共通端子[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a surface acoustic wave device using a surface acoustic wave element.
[0002]
[Prior art]
Today, mobile communication devices typified by mobile phones, which are remarkably spreading, are rapidly being miniaturized. Along with this, miniaturization and high performance are required for components used in mobile communication devices.
[0003]
Here, a branching filter is used to branch and generate a signal in the mobile communication device. Some duplexers consist of bandpass filters, bandstop filters, or combinations of these, but in order to achieve further miniaturization and higher performance, those using surface acoustic wave elements are used. is there.
[0004]
When a duplexer is configured using two surface acoustic wave elements having different band center frequencies, a phase matching circuit is provided for each element so that the filter characteristics do not interfere with each other. It is done. In order to obtain a larger output, a resonator, which is one of the components of the surface acoustic wave element, is provided with a reflector.
[0005]
[Problems to be solved by the invention]
In a duplexer package using such a surface acoustic wave element, the element becomes hot during operation, and a large thermal resistance is generated.
[0006]
As a result, desired operation characteristics may not be obtained, and operation stability is impaired.
[0007]
Here, it is conceivable to provide a fin for heat dissipation in the duplexer package, but this increases the size of the package and does not meet the market demand.
[0008]
Such a problem is applicable not only to the duplexer package but also to the entire surface acoustic wave device.
[0009]
SUMMARY OF THE INVENTION An object of the present invention is to provide a surface acoustic wave device that can efficiently dissipate heat from a surface acoustic wave element without increasing the size of the package.
[0010]
[Means for Solving the Problems]
In order to solve the above-mentioned problems, a surface acoustic wave device according to the present invention includes a surface acoustic wave element having a predetermined band center frequency and a surface acoustic wave device including a mounting substrate on which the surface acoustic wave element is mounted by flip-chip mounting. The surface acoustic wave element includes a resonator that resonates with a surface acoustic wave having a predetermined frequency, electrically connects the resonator and the mounting substrate, and relates to an electrical operation of the resonator. And a second electrode that is electrically connected to an indeterminate potential wiring formed on the mounting substrate and is not related to the electrical operation of the resonator, the second electrode being A surface acoustic wave device, wherein the surface acoustic wave device is electrically connected to a reflector that is provided in the resonator and reflects surface acoustic waves.
[0011]
According to such an invention, heat generated during the operation of the surface acoustic wave element is propagated to the wiring of the mounting substrate through the second electrode and radiated, so that the package is not enlarged. It is possible to efficiently dissipate heat from the surface acoustic wave element.
Moreover, since such a 2nd electrode is electrically connected with the reflector, it becomes possible to perform efficiently the thermal radiation of the reflector which becomes the highest temperature at the time of operation | movement of a surface acoustic wave element.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described more specifically with reference to the drawings. Here, in the accompanying drawings, the same reference numerals are given to the same members, and duplicate descriptions are omitted. The embodiment of the invention is a particularly useful embodiment in which the present invention is implemented, and the present invention is not limited to the embodiment.
[0013]
1 is a block diagram showing the configuration of a duplexer according to an embodiment of the present invention, FIG. 2 is a characteristic diagram of the duplexer of FIG. 1, and FIG. 3 is a duplexer according to an embodiment of the present invention. FIG. 4 is a block diagram showing a configuration of a surface acoustic wave element that is a component of a duplexer package according to an embodiment of the present invention.
[0014]
In the duplexer shown in FIG. 1, two surface acoustic wave filter elements (surface acoustic wave elements) F 1 and F 2 have mutually different band center frequencies f 1 and f 2 as shown in FIG. Yes. Then, in order to configure the demultiplexer Such SAW filter device F 1, F 2, the phase matching circuit P 1 to eliminate the interference of the filter characteristics of the SAW filter device F 1, F 2 , P 2 are provided.
[0015]
Phase matching circuits P 1 and P 2 are connected to the common terminals T 1 and T 2 , respectively, and surface acoustic wave filter elements F 1 and F 2 are connected to the phase matching circuits P 1 and P 2 , respectively. It is connected. In each SAW filter device F 1, F 2, input-output terminal S 1 of the demultiplexed signals, S 2 are connected.
[0016]
As shown in FIG. 3, the duplexer package (surface acoustic wave device) 10 has an element mounting layer 11a on which the two surface acoustic wave filter elements F 1 and F 2 described above are mounted at the uppermost layer. From the element mounting layer 11a toward the lower layer, a ground layer 11b in which ground electrodes are formed, a circuit formation layer 11c in which high-frequency circuits such as phase matching circuits P 1 and P 2 are formed, and a common ground A substrate connection layer 11d on which electrodes and external connection terminals 12 are formed is located, and these are connected to each other to form a mounting substrate 11 having a laminated structure.
[0017]
The mounting substrate 11 is made of ceramic or resin.
[0018]
The surface acoustic wave filter elements F 1 and F 2 are hermetically sealed by a cap 16 and packaged as a whole.
[0019]
In the present embodiment, the mounting substrate 11 has four layers, but may be one layer or a plurality of layers other than the four layers.
[0020]
Here, each layer of the mounting substrate 11 is appropriately electrically connected by a through hole, a via hole, or a wiring 15 such as a sidewall wiring formed on a side surface, and a wiring 15 such as a microstrip line is formed on the surface of the layer. Yes.
[0021]
As shown in FIG. 4, the surface acoustic wave filter elements F 1 and F 2 that are components of the duplexer package 10 include a resonator 17 that resonates with a surface acoustic wave having a predetermined frequency. The resonator 17 is electrically connected to the resonator 17 and the mounting substrate 11, and an input electrode (first electrode) 18 and an output electrode (first electrode) which are electrodes related to the electrical operation of the resonator 17. Electrode) 19 and a ground electrode (first electrode) 20 are connected via a wiring 21.
[0022]
Further, a heat radiation electrode (second electrode) 22, that is, a dummy electrode is formed which is formed on the mounting substrate 11 and is connected to an indeterminate potential simply by being routed and is not related to the electrical operation of the resonator 17. Has been. Here, the potential indefinite wiring specifically refers to wiring other than input / output wiring and wiring connected to the ground electrode of the mounting substrate 11.
[0023]
The electrodes 18, 19, 20, and 22 and the mounting substrate 11 are bump-connected by ultrasonic waves, with the electrodes 18, 19, 20, and 22 serving as the protruding electrodes 14 shown in FIG.
[0024]
Here, the resonator 17 generates a surface acoustic wave by an electric field or converts the surface acoustic wave into an electric signal, and has a crossed finger-like (comb tooth) electrode 17a, and a reflector that reflects the surface acoustic wave. 17b.
[0025]
A part of the heat radiation electrode 22 is electrically connected to the reflector 17 b directly or via the wiring 21. The other heat radiation electrode 22 is provided independently from the resonator 17 and the electrodes 18, 19, and 20.
[0026]
As described above, since the heat radiation electrode 22 is an electrode not related to the electrical operation of the resonator 17, even if the heat radiation electrode 22 and the reflector 17b are electrically connected, the heat radiation electrode 22 An electrical signal never flows. Further, the heat radiation electrode 22 may be of a form that is electrically connected to the reflector 17b, or may be of a form that is provided independently from the resonator 17 and the electrodes 18, 19, and 20.
[0027]
The duplexer package 10 of the present embodiment is manufactured as follows.
[0028]
First, a predetermined circuit pattern or wiring pattern is formed on a substrate material constituting each of the layers 11a to 11d by using a thin film forming technique. Then, these are aligned and bonded to each other to form a stacked package.
[0029]
Next, the surface acoustic wave filter elements F 1 and F 2 are mounted on the element mounting layer 11 a by ultrasonic waves, and the surface acoustic wave filter elements F 1 and F 2 are hermetically sealed using the cap 16.
[0030]
According to the duplexer package 10 described above, as described above, the surface acoustic wave filter elements F 1 and F 2 are electrically connected to the wirings other than the input / output formed on the mounting substrate 11 to resonate. A heat radiation electrode 22 that is not related to the electrical operation of the vessel 17 is formed.
[0031]
Therefore, the heat generated during the operation of the element is propagated to the wiring of the mounting substrate 11 through the heat radiation electrode 22, thereby radiating heat. This makes it possible to efficiently dissipate the surface acoustic wave filter elements F 1 and F 2 without increasing the size of the package.
[0032]
In particular, when the heat radiation electrode 22 is electrically connected to the reflector 17b, it is possible to efficiently dissipate the heat from the reflector 17b that becomes high temperature when the surface acoustic wave filter elements F 1 and F 2 are operated. .
[0033]
The above description shows an example in which the present invention is applied to the duplexer package 10, but the present invention is not limited to the duplexer package 10, and the surface acoustic wave filter element, that is, elastic The present invention can be applied to various surface acoustic wave devices such as various surface acoustic wave filter devices in which one or a plurality of surface acoustic wave elements are mounted. Therefore, the application range of the present invention is not limited to the filter, and can be applied to various fields other than the filter.
[0034]
【The invention's effect】
As is apparent from the above description, the present invention can provide the following effects.
[0035]
(1) Since the surface acoustic wave element is formed with the second electrode that is electrically connected to the wiring formed on the mounting substrate that does not flow input / output signals and is not related to the electrical operation of the resonator. The heat generated during the operation of the element is propagated to the wiring of the mounting substrate through the second electrode to be radiated, and the surface acoustic wave element can be efficiently radiated without increasing the size of the package. It becomes possible.
[0036]
(2) In particular, if the heat dissipation electrode is electrically connected to the reflector, it is possible to efficiently dissipate heat from the reflector that becomes high temperature during the operation of the surface acoustic wave device.
[Brief description of the drawings]
FIG. 1 is a block diagram showing a configuration of a duplexer according to an embodiment of the present invention.
FIG. 2 is a characteristic diagram of the duplexer in FIG. 1;
FIG. 3 is a cross-sectional view showing a duplexer package according to an embodiment of the present invention.
FIG. 4 is a block diagram showing a configuration of a surface acoustic wave element that is a component of a duplexer package according to an embodiment of the present invention.
[Explanation of symbols]
10 splitter package (surface acoustic wave device)
11 mounting substrate 11a element mounting layer 11b ground layer 11c circuit forming layer 11d substrate connection layer 12 external connection terminal 13 cap 14 protruding electrode 15 wiring 17 resonator 18 input electrode (first electrode)
19 Output electrode (first electrode)
20 Ground electrode (first electrode)
21 Wiring 22 Heat radiation electrode (second electrode)
F 1 and F 2 surface acoustic wave filter elements (surface acoustic wave elements)
P 1 and P 2 phase matching circuits S 1 and S 2 input / output terminals T 1 and T 2 common terminals

Claims (3)

所定の帯域中心周波数を有する弾性表面波素子および前記弾性表面波素子がフリップチップ実装にて搭載される実装基板を備えた弾性表面波装置であって、
前記弾性表面波素子は、
所定周波数の弾性表面波に共振する共振器と、
前記共振器と前記実装基板とを電気的に接続し、前記共振器の電気的動作に関係する第１の電極と、
前記実装基板に形成された電位不定の配線と電気的に接続され、前記共振器の電気的動作に関係しない第２の電極とを有し、
前記第２の電極は、前記共振器に設けられて弾性表面波を反射する反射器と電気的に接続されている、
ことを特徴とする弾性表面波装置。A surface acoustic wave device including a surface acoustic wave element having a predetermined center frequency of a band and a mounting substrate on which the surface acoustic wave element is mounted by flip chip mounting,
The surface acoustic wave element is
A resonator that resonates with a surface acoustic wave of a predetermined frequency;
Electrically connecting the resonator and the mounting substrate, and a first electrode related to an electrical operation of the resonator;
A second electrode that is electrically connected to an indefinite potential wiring formed on the mounting substrate and is not related to the electrical operation of the resonator;
The second electrode is electrically connected to a reflector that is provided in the resonator and reflects surface acoustic waves.
A surface acoustic wave device. 前記実装基板には、相互に異なる帯域中心周波数を有する２つの弾性表面波素子が搭載されていることを特徴とする請求項１記載の弾性表面波装置。  2. The surface acoustic wave device according to claim 1, wherein two surface acoustic wave elements having mutually different band center frequencies are mounted on the mounting substrate. 前記第２の電極は突起電極であることを特徴とする請求項１または２記載の弾性表面波装置。  3. The surface acoustic wave device according to claim 1, wherein the second electrode is a protruding electrode.
JP2001292612A 2001-09-25 2001-09-25 Surface acoustic wave device Expired - Fee Related JP3886033B2 (en)

Priority Applications (5)

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JP2001292612A JP3886033B2 (en) 2001-09-25 2001-09-25 Surface acoustic wave device
DE60229821T DE60229821D1 (en) 2001-09-25 2002-09-25 Housing for integrated circuit
EP02021467A EP1296453B1 (en) 2001-09-25 2002-09-25 Package substrate for integrated circuit device
US10/253,991 US7151310B2 (en) 2001-09-25 2002-09-25 Package substrate, integrated circuit apparatus, substrate unit, surface acoustic wave apparatus, and circuit device
US11/480,500 US7304377B2 (en) 2001-09-25 2006-07-05 Package substrate, integrated circuit apparatus, substrate unit, surface acoustic wave apparatus, and circuit device

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JP2001292612A JP3886033B2 (en) 2001-09-25 2001-09-25 Surface acoustic wave device

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JP4498049B2 (en) * 2004-07-28 2010-07-07 京セラ株式会社 Surface acoustic wave element, surface acoustic wave device, and communication device
JP4758197B2 (en) * 2005-10-24 2011-08-24 京セラ株式会社 Surface acoustic wave device and communication device
JP2007184690A (en) * 2006-01-05 2007-07-19 Matsushita Electric Ind Co Ltd Antenna duplexer
WO2007114390A1 (en) * 2006-03-31 2007-10-11 Kyocera Corporation Elastic surface wave element, elastic surface wave device, and communication device
US8004370B2 (en) 2006-03-31 2011-08-23 Kyocera Corporation Surface acoustic wave element, surface acoustic wave apparatus, and communication apparatus
JP5110224B2 (en) * 2010-03-11 2012-12-26 株式会社村田製作所 Elastic wave device
JP5105026B2 (en) 2010-03-12 2012-12-19 株式会社村田製作所 Elastic wave resonator and ladder type filter
JP7117828B2 (en) * 2017-06-13 2022-08-15 太陽誘電株式会社 elastic wave device
JP7282343B2 (en) * 2021-04-19 2023-05-29 三安ジャパンテクノロジー株式会社 Acoustic wave device and module comprising the acoustic wave device
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