JP2000340548A - Plasma treatment apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize a plasma treatment apparatus which has a longer service life and a lower running cost by a method, wherein an alumina cylinder is arranged. SOLUTION: An inner cylinder 6 is equipped with an inner cylinder main body 6a of a dielectric material, such as quartz which hardly produces contaminants even if plasma sputtering is carried out, and a plasma-resistant layer 6c of alumina is formed on the inner circumferential surface of the inner cylinder main body 8a, where alumina is hardly sputtered by plasma and hardly produces contaminants, even if it is sputtered. A microwave reflective layer 6b of material, such as aluminum which reflects microwaves, is formed on the outer circumferential surface of the inner cylinder main body 6a. A protective ring 8 is equipped with a quartz protective ring main body, and a plasma- resistant layer is formed on the inner circumferential surface of the quartz protective ring main body by flame spray coating alumina, similarly to the inner cylinder 6, and a microwave reflecting layer is formed on the outer circumferential surface of the protective ring main body.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for performing processing such as etching or ashing on a semiconductor substrate, a glass substrate for a liquid crystal display, or the like by using plasma generated by using microwaves.

[0002]

2. Description of the Related Art Plasma generated by giving energy to a reaction gas from the outside is widely used in a manufacturing process of an LSI or an LCD. In particular, the use of plasma has become an indispensable basic technology in the dry etching process.

FIG. 8 is a side sectional view showing a conventional plasma processing apparatus, and FIG. 9 is a plan view of the plasma processing apparatus shown in FIG. The rectangular box-shaped reactor 51 is made of an aluminum material. The upper opening of the reactor 51 is a microwave window 54
And sealed in an airtight state. This microwave window 54
It is made of a dielectric material such as quartz glass or alumina, which has heat resistance and microwave transparency, and has small dielectric loss.

[0004] A rectangular box-shaped cover member 60 for covering the upper part of the reactor 51 is connected to the reactor 51. A dielectric line 61 is attached to a ceiling portion in the cover member 60,
An air gap (gap) 63 is provided between the dielectric line 61 and the microwave window 54. The dielectric line 61 is formed by molding a dielectric such as Teflon (registered trademark) such as a fluororesin, a polyethylene resin or a polystyrene resin into a plate shape having a protrusion at the apex of a substantially pentagon formed by combining a rectangle and a triangle. The projection is fitted inside a waveguide 71 connected to the peripheral surface of the cover member 60. A microwave oscillator 70 is connected to the waveguide 71, and the microwave oscillated by the microwave oscillator 70 is incident on the projection of the dielectric line 61 by the waveguide 71.

As described above, the base end side of the convex portion of the dielectric line 61 is formed into a substantially triangular tapered portion 61a in plan view, and the microwave incident on the convex portion follows the tapered portion 61a. And is propagated in the entire width of the dielectric line 61. The microwave is reflected on the end face of the cover member 60 facing the waveguide 71, and the incident wave and the reflected wave are superimposed to form a standing wave on the dielectric line 61.

[0006] The interior of the reactor 51 is a processing chamber 52,
Corrosion-resistant coating is applied to the surrounding wall of the processing chamber 52 by anodizing.
51a is formed. Peripheral wall of processing chamber 52 and corrosion resistant coating
A gas introduction pipe 55 is fitted into a through hole passing through 51a, and a required gas is introduced from the gas introduction pipe 55 into the processing chamber 52. At the center of the bottom wall of the processing chamber 52, a mounting table 53 for mounting the sample W is provided. The mounting table 53 is connected to an RF power supply 57 of several hundred KHz to tens of MHz through a matching box 56. I have. Further, an exhaust port 58 is provided in the bottom wall of the reactor 51, and the inside air of the processing chamber 52 is discharged from the exhaust port 58.

In order to perform an etching process on the surface of the sample W using such a plasma processing apparatus, the inside of the processing chamber 52 is evacuated to a required pressure by exhausting from the exhaust port 58, and then the processing is performed through the gas introduction pipe 55. A reaction gas is supplied into the chamber 52. Then
Microwaves are oscillated from a microwave oscillator 70 and introduced into the dielectric line 61 via the waveguide 71. At this time,
The microwave is spread uniformly in the dielectric line 61 by the tapered portion 61a, and forms a standing wave in the dielectric line 61. Due to the standing wave, a leakage electric field is formed below the dielectric line 61, and the electric field is introduced into the processing chamber 52 through the air gap 63 and the microwave window 54. Thus, the microwave propagates into the processing chamber 52. Thereby, the processing room 52
Plasma is generated in the sample, and the plasma
Is etched. Thus, even if the diameter of the reactor 51 is increased to process a large-diameter sample W, microwaves can be uniformly introduced to the entire region of the reactor 51, and the large-diameter sample W can be relatively removed. Plasma processing can be performed uniformly.

[0008]

However, in the conventional plasma processing apparatus, since the corrosion-resistant film 51a provided on the inner surface of the reactor 51 is sputtered by plasma, the aluminum layer of the reactor 51 is exposed. There was a fear. When the exposed aluminum layer is exposed to plasma, particles of aluminum reaction products are generated and contaminate the sample W. Therefore, before the aluminum layer is exposed, the used reactor 51 is replaced with a new reactor 51. Must be replaced. However, the corrosion-resistant film 51a formed by the anodic oxidation method has a relatively short thickness, so its life is short, and the replacement work of the reactor 51 must be performed frequently, and thus the running cost is high.

The present invention has been made in view of such circumstances, and an object of the present invention is to provide a plasma processing apparatus having a low running cost.

[0010]

According to a first aspect of the present invention, there is provided a plasma processing apparatus for transmitting microwaves through a microwave window into a bottomed cylindrical container having an opening sealed with a microwave window. Plasma is generated in the container by introducing
In an apparatus for processing an object disposed in the container with generated plasma, a cylindrical body formed of a dielectric body has an opening of the cylindrical body opposed to the microwave window to generate plasma in the container. It is arranged so as to surround the region to be made, and a microwave reflection layer for reflecting microwaves is provided on the outer peripheral surface of the cylindrical body.

[0011] A plasma processing apparatus according to a second aspect of the present invention comprises:
The invention is characterized in that a metal outer cylinder is disposed around the cylinder, and a passage for allowing a heat medium to flow is provided in a gap between the two.

[0012] A plasma processing apparatus according to a third aspect of the present invention comprises:
Alternatively, in the second invention, the cylindrical body is formed of alumina.

Plasma is generated in the container by transmitting microwaves through a microwave window that seals the opening of the bottomed cylindrical container. A cylindrical body made of a dielectric material such as quartz or alumina is arranged around a region in the container where plasma is generated. Since the cylindrical body is not easily sputtered by plasma, the life is long and the running cost of the plasma processing apparatus is low. Further, even when the cylinder is sputtered by plasma, the problem of contamination hardly occurs.

The microwave introduced into the vessel propagates into the cylinder, but is reflected by the microwave reflection layer provided on the outer peripheral surface of the cylinder to a region where plasma is generated.
The microwave can be prevented from leaking to the outside of the reactor, and the microwave can be concentrated in the region. Thereby, while the utilization efficiency of the microwave is improved, even when a sensor for detecting the temperature of the cylinder is attached to the outer peripheral surface of the cylinder, the sensor is not affected by the microwave, Temperature can be detected.

The so-called double-walled structure is obtained by forming the above-mentioned cylindrical body as an inner cylindrical body and arranging a metal outer cylindrical body around the inner cylindrical body. This outer cylinder provides the required structural strength. Further, the inner cylinder is adjusted to a required temperature by flowing a heat medium through a flow passage provided in a gap between the inner cylinder and the outer cylinder. Thus, the workpiece can be plasma-processed with high accuracy.

According to a fourth aspect of the present invention, there is provided a plasma processing apparatus comprising:
Alternatively, in the second invention, the cylindrical body is formed of quartz, and a plasma-resistant layer having corrosion resistance to plasma is provided on an inner peripheral surface of the cylindrical body.

A plasma processing apparatus according to a fifth aspect of the present invention comprises
In the present invention, the plasma resistant layer is formed by spraying alumina.

Alumina, for example, is formed as a plasma-resistant layer on the inner surface of a cylindrical body formed of quartz by thermal spraying.
Alumina is formed by thermal spraying in addition to being hardly sputtered by plasma, and therefore has a relatively large thickness and a long life. Therefore, the running cost of the plasma processing apparatus is low. Further, even when the plasma resistant layer is sputtered by plasma, the generation of contamination is prevented as much as possible. Further, even if the quartz is exposed and the portion is sputtered by plasma, contamination hardly occurs. Further, since the cylindrical body is formed by a combination of a plasma-resistant layer such as quartz and alumina, the manufacturing of the cylindrical body is easier and the manufacturing cost of the cylindrical body is lower than when the cylindrical body is formed of alumina alone. .

A plasma processing apparatus according to a sixth aspect of the present invention has a first
In any one of the fifth to fifth inventions, the cylinder is detachably provided.

Since the cylinder is detachable, the life of the cylinder is reduced by removing the cylinder at an appropriate time interval and performing a regeneration operation of laminating a plasma-resistant layer on the inner surface of the cylinder. Since it can be further extended, the running cost of the plasma processing apparatus can be further reduced.

[0021]

Embodiments of the present invention will be specifically described below with reference to the drawings. (Embodiment 1) FIG. 1 is a side sectional view showing the structure of a plasma processing apparatus according to the present invention. In the drawing, reference numeral 3 denotes a reactor having a convex shape in a side view. FIG. 2 is a partially enlarged view of the plasma processing apparatus shown in FIG. The reactor 3 is made of aluminum and is connected to the upper end of a bottomed cylindrical second container 2 so that the cylindrical first container 1 having a smaller diameter than the second container 2 has the same central axis. The upper opening of the first container 1 is hermetically sealed with a microwave window 14. The microwave window 14 is formed of a dielectric material such as quartz glass or alumina, which has heat resistance and microwave permeability and has a small dielectric loss. In the first container 1,
As will be described later, the second chamber 2 is provided with a processing chamber 12 for processing the sample W by the plasma generated in the generation chamber 11.

The first container 1 has a cylindrical outer cylinder 5 fixed to the outer edge of the annular bottom 4 and a cylindrical inner cylinder 6 detachably attached to the inner edge of the bottom 4. It is placed on it and has a double peripheral wall structure. The bottom 4 and the outer cylinder 5 are made of aluminum. At the upper ends of the inner cylinder 6 and the outer cylinder 5, an upper plate 9 made of aluminum is formed in an annular shape, and the inner cylinder 6 is detachably clamped and fixed by the bottom 4 and the upper plate 9. I have.

On the inner peripheral surface of the upper plate 9, there is provided a step portion 9a having an inner diameter larger than the inner diameter of the other portion, and the microwave window 14 fitted in the upper plate 9 is provided with the step portion. 9a, the upper surface of the microwave window 14 and the upper surface of the upper plate 9 are supported so as to be flush. The inner diameter of the bottom surface of the upper plate 9 is the same as that of the inner cylinder 6 described above.
In the portion of the inner peripheral surface of the upper plate 9 which is not opposed to the microwave window 14, a protection ring 8 for protecting the portion is provided on the inner peripheral surface of the upper plate 9. It is fitted so that it is flush. The upper plate 9 and the protection ring 8 are provided with a plurality of gas introduction paths 19, 19,... For introducing a reactive gas into the first container 1 so as to penetrate both.

An O-ring 17 is provided between the step 9a of the upper plate 9 and the microwave window 14 placed on the step 9a, and between the upper plate 9 and the upper end of the inner cylinder 6. , 17 are interposed respectively. Also, an O-ring 17 is interposed between the inner edge of the bottom 4 and the lower end of the inner cylinder 6, thereby keeping the inside of the first container 1 airtight.

The above-mentioned inner cylinder portion 6 has a cylindrical inner cylinder body 6a formed of quartz, which is a dielectric material that is unlikely to cause contamination even when sputtered by plasma. On the inner peripheral surface, a plasma-resistant layer 6c is formed by spraying alumina, which is a material that is hardly sputtered by plasma and is less likely to be contaminated even when sputtered. On the outer peripheral surface of the inner cylinder main body 6a, a microwave reflection layer 6b made of a material that reflects microwaves, such as aluminum, is formed.

The protection ring 8 has a plasma-resistant layer 8c formed by spraying alumina on the inner peripheral surface of a protection ring body 8a made of quartz, similarly to the inner cylindrical portion 6. Has a microwave reflection layer 8b formed on the outer peripheral surface thereof.

A gas passage 10 through which a cooling gas flows is provided between the inner cylinder 6 and the outer cylinder 5, and the cooling gas is introduced into the outer cylinder 5 through the gas passage 10. Gas introduction hole 15a,
And a gas discharge hole 15 for discharging the cooling gas from the gas passage 10
b is penetrating. Also, the gas flow passage of the upper plate 9
A plurality of through-holes penetrating the upper plate 9 are provided at appropriate intervals in a portion facing the upper plate 10, and rod-shaped lamp heaters 16, 16,. Has been inserted.

The above-mentioned microwave window 14 is covered with a cover member 30 made of a conductive metal and formed into a disk shape. The cover member 30 is attached to the upper surface of the upper plate 9.
An antenna 31 for introducing microwaves into the reactor 3 is provided on an upper surface of the cover member 30. Antenna 31
An annular waveguide type antenna unit 32 fixed to the upper surface of the cover member 30 and formed by molding a member having a U-shaped cross section in an annular shape is provided, and the annular waveguide type antenna unit of the cover member 30 is provided. 32
A plurality of slits 35, 35,...

The annular waveguide antenna section 32 includes the first container 1.
Is provided slightly concentric with the central axis of the first container 1 slightly inside the inner peripheral surface of the first container 1, and microwaves are introduced into the annular waveguide type antenna section 32 around an opening provided on the outer peripheral surface thereof. Is connected so as to be in the diametrical direction of the annular waveguide antenna unit 32. A dielectric 34 such as a fluorocarbon resin such as Teflon (registered trademark), a polyethylene resin, or a polystyrene resin (preferably Teflon) is fitted inside the introduction portion 33 and the annular waveguide antenna portion 32.

A waveguide 41 extending from a microwave oscillator 40 is connected to the introduction section 33, and the microwave oscillated by the microwave oscillator 40 passes through the waveguide 41 to the introduction section 33 of the antenna 31. Incident. This incident wave is introduced from the introduction section 33 to the annular waveguide antenna section 32. The microwaves introduced into the annular waveguide type antenna unit 32 are converted into traveling waves traveling in opposite directions in the annular waveguide type antenna unit 32, and are generated in the dielectric 34 in the annular waveguide type antenna unit 32. And both traveling waves are superimposed to generate a standing wave. Due to this standing wave, a wall current having a local maximum value flows through the inner surface of the annular waveguide antenna unit 32 at predetermined intervals.

The slits 35, 35,... Are formed in the portion of the cover member 30 facing the annular waveguide antenna section 32 in the diameter direction of the annular waveguide antenna section 32, that is, in the annular waveguide antenna section. It is formed in a rectangular shape so as to be orthogonal to the traveling direction of the microwave propagating in the antenna unit 32.

Each of the slits 35, 35,... Is formed at one of two points where an extension of the center line of the introduction section 33 and a circle connecting the center of the annular waveguide type antenna section 32 in the width direction intersect. (2n−1) · λg / 4 (n is an integer, λg
Has two slits 35, 35 at a position separated by a wavelength of a microwave propagating in the antenna), and from both slits 35, 35, to both of them following the circle, m · λg /
A plurality of other slits 35, 35, ... at intervals of 2 (m is an integer)
Has been established respectively. That is, the standing wave of the microwave propagating in the annular waveguide type antenna section 32 becomes a high voltage / low current at the antinode position and a low voltage / high current at the node position. When the strip-shaped slits 35 are provided so as to be orthogonal to the direction, microwaves can be efficiently radiated by providing the slits at the nodes.

At the center of the bottom wall of the processing chamber 12, there is provided a mounting table 23 on which the sample W is mounted, and a high frequency power supply 25 is connected to the mounting table 23 via a matching box 24. In addition, an exhaust port 13 is opened in the bottom wall of the second container 2,
The inside air of the reactor 3 is discharged from the exhaust port 13.

In order to perform an etching process on the surface of the sample W using such a microwave plasma processing apparatus, the lamp heaters 16, 16,... After adjusting the temperature of the inner cylinder 6 to a required temperature and exhausting the gas through the exhaust port 13 to reduce the pressure in the production chamber 11 and the processing chamber 12 to a desired pressure, the gas introduction pipe 1
A reaction gas is supplied into the production chamber 11 from 9, 19,. Next, a microwave is oscillated from the microwave oscillator 40, and the microwave is introduced into the antenna 31 through the waveguide 41, where a standing wave is formed. The electric field radiated from the slits 35, 35,...
Is introduced into the generation chamber 11 and plasma is generated in the generation chamber 11, and this plasma etches, for example, a silicon oxide film on the surface of the sample W mounted on the mounting table 23 provided in the processing chamber 12. .

Simultaneously with the oscillation of the microwave oscillator 40, a high frequency is supplied from the high frequency power supply 25 to the mounting table 23 via the matching box 24, and the upper plate 9 is used as a counter electrode.
By applying the voltage, the sample W on the mounting table 23 is etched while controlling the ions in the plasma.

At this time, since the plasma-resistant layer 6c is formed in the portion of the inner cylinder portion 6 facing the generation chamber 11, it is difficult to be sputtered by the plasma, and even if sputtered, contamination is prevented as much as possible. You. Further, since the plasma resistant layer 6c is formed by thermal spraying, its thickness is relatively thick and its life is long. Therefore, the running cost of the plasma processing apparatus is low. Further, even when the inner cylinder main body 6a is exposed by the plasma sputtering, the inner cylinder main body 6a is formed of quartz, so that contamination hardly occurs. As described above, by providing the plasma-resistant layer 6c such as alumina, even when plasma of a fluorine-based gas is used such as etching of a silicon oxide film, the inner cylinder portion 6 is formed using quartz which is easy to manufacture. can do.

Since the inner cylinder 6 is detachable, a regeneration operation for removing the inner cylinder 6 at appropriate time intervals and laminating the plasma-resistant layer 6c on the inner surface of the inner cylinder 6 is performed. By doing so, the life of the inner cylinder portion 6 can be further extended, so that the running cost of the plasma processing apparatus can be further reduced.

On the other hand, the microwave propagated to the inner cylinder 6 is
Since the microwave is reflected into the generation chamber 11 by the microwave reflecting layer 6b, the microwave is prevented from leaking to the outside of the reactor 3, and the microwave can be concentrated on a required region. Thereby, the utilization efficiency of the microwave is improved, and even when a sensor for detecting the temperature of the inner cylinder 6 is attached to the outer peripheral surface of the inner cylinder 6, the sensor is affected by the microwave. The temperature can be detected without receiving it.

The protective ring 8 also has a plasma-resistant layer 8c formed by spraying alumina on the inner peripheral surface of a protective ring main body 8a made of quartz, and a microwave reflection layer on the outer peripheral surface of the protective ring main body 8a. Since 8b is formed, the same effect as the above-described effect of the inner cylindrical portion 6 can be obtained.

(Embodiment 2) FIG. 3 is a side sectional view showing Embodiment 2, in which a band heater 18 is provided in place of the lamp heater 16 shown in FIG. In the figure, parts corresponding to the parts shown in FIG. 1 are denoted by the same reference numerals, and description thereof is omitted. As shown in FIG.
A tubular band heater 18 is externally fitted, and the band heater
By supplying power to the power supply 18, the temperature of the inner cylinder 6 is raised.

In such a plasma processing apparatus, the running cost can be reduced as before. In addition, since the band heater 18 is externally fitted to the inner cylindrical portion 6, compared with the case where the above-described lamp heater 16 is provided,
The width dimension of the gas passage 10 of the first container 1 can be reduced, so that the cost of the apparatus can be reduced.

(Embodiment 3) FIG. 4 is a side sectional view showing an embodiment 3 of the present invention, in which an inner cylindrical portion 7 mainly made of alumina is used for etching a sample W having polysilicon deposited on its surface. Is provided. FIG. 5 is a partially enlarged view of the plasma processing apparatus shown in FIG. In the figure, parts corresponding to the parts shown in FIG. 1 are denoted by the same reference numerals, and description thereof is omitted. As shown in FIG. 4 and FIG.
The outer surface of the inner cylinder body 7a made of alumina, which is a dielectric material that is difficult to be sputtered by plasma and is less likely to be contaminated even when exposed to plasma, is formed by using a material that reflects microwaves, such as aluminum, on the outer peripheral surface of the inner cylinder body 7a. The wave reflection layer 7b is formed. In addition, similarly to the inner cylinder 7, the protection ring 28 is formed of a protection ring main body 28a made of alumina.
A microwave reflection layer 28b is formed on the outer peripheral surface of the substrate.

In such a plasma processing apparatus,
Since the portion of the inner cylinder portion 7 facing the generation chamber 11 is made of alumina, it is difficult to be sputtered by plasma and has a long life, so that the running cost of the plasma processing apparatus is low. Further, even when sputtering is performed, the problem of contamination is small. The life of the inner cylinder 7 can be further extended by removing the inner cylinder 7 at appropriate time intervals and performing a regeneration operation of spraying alumina on the inner surface of the inner cylinder 7. Thus, the running cost of the plasma processing apparatus can be further reduced.

On the other hand, the microwave propagated to the inner cylinder 7 is
Since the microwave is reflected into the generation chamber 11 by the microwave reflecting layer 7b, the microwave is prevented from leaking to the outside of the reactor 3, and the microwave can be concentrated on a required region. As a result, the utilization efficiency of the microwave is improved, and even when a sensor for detecting the temperature of the inner cylinder 7 is attached to the outer peripheral surface of the inner cylinder 7, the sensor is affected by the microwave. The temperature can be detected without receiving it.

The protection ring 28 is also provided with a microwave reflection layer 28b on the outer peripheral surface of a protection ring main body 28a formed of alumina.
Is formed, the same effect as the above-described effect by the inner cylinder portion 7 is exerted.

(Embodiment 4) FIG. 6 is a side sectional view showing Embodiment 4 and shows a case where the gas communication channel 10 shown in FIG. 1 is not provided. FIG. 7 is a partially enlarged view of the plasma processing apparatus shown in FIG. In this plasma processing apparatus, for example, a sample W having a silicon oxide film deposited on its surface is etched. In the figure, parts corresponding to the parts shown in FIG. 1 are denoted by the same reference numerals, and description thereof is omitted.

As shown in FIGS. 6 and 7, the first container 1
In the figure, a cylindrical outer cylinder 5 is fixed near the inner edge of the annular bottom 4, and an upper plate 9 is attached to the upper end of the outer cylinder 5. An O-ring 1 is provided between the upper end of the outer cylinder 5 and the upper plate 9 and between the lower end of the outer cylinder 5 and the bottom 4.
7, 17 are interposed respectively, whereby the inside of the first container 1 is kept airtight.

In the vicinity of the lower end of the inner cylinder 6, the lower end on the inner peripheral side of the inner cylinder 6 is flush with the lower surface of the bottom 4, and the lower end on the outer peripheral side of the inner cylinder 6 is arranged on the upper surface of the bottom 4. Thus, a lower step portion 6d is formed. In the vicinity of the upper end of the inner cylinder portion 6, the upper end of the inner cylinder portion 6 on the inner peripheral surface side is connected to the upper plate 9.
The upper step portion 6e is formed by making the upper end on the outer peripheral surface side of the inner cylindrical portion 6 flush with the lower surface of the upper plate 9. And the inner cylinder part 6 is a lower step part.
6 d is fitted to the inner peripheral edge of the bottom 4, and the upper step 6 e is fitted to the inner peripheral edge of the upper plate 9, and is removably sandwiched and fixed between the upper plate 9 and the bottom 4. Also,
Gas introduction passages 19, 19,... Penetrate near the upper end of the inner cylinder portion 6.

In such a plasma processing apparatus,
As before, the plasma-resistant layer 6c is formed in the portion of the inner cylinder portion 6 facing the generation chamber 11, so that it is difficult to be sputtered by plasma, and even if sputtered, the problem of contamination is small. Further, since the plasma resistant layer 6c is formed by thermal spraying, its thickness is relatively thick and its life is long. Therefore, the running cost of the plasma processing apparatus is low. Also, the inner cylinder body is sputtered by plasma sputtering.
Even when 6a is exposed, the inner cylinder main body 6a is formed of quartz, so that contamination hardly occurs.

The inner peripheral surface of the upper plate 9
The portion not facing the microwave window 14 is protected from the plasma by the inner cylindrical portion 6.

On the other hand, since the inner cylinder 6 is detachable, the regeneration operation of removing the inner cylinder 6 at appropriate time intervals and stacking the plasma resistant layer 6c on the inner surface of the inner cylinder 6 is performed. By doing so, the life of the inner cylinder portion 6 can be further extended, so that the running cost of the plasma processing apparatus can be further reduced.

Further, the microwave propagated to the inner cylinder 6 is
Since the microwave is reflected into the generation chamber 11 by the microwave reflecting layer 6b, the microwave can be prevented from leaking to the outside of the reactor 3, and the microwave can be concentrated in a required region. Thereby, the utilization efficiency of the microwave is improved, and even when a sensor for detecting the temperature of the inner cylinder 6 is attached to the outer peripheral surface of the inner cylinder 6, the sensor is affected by the microwave. The temperature can be detected without receiving it.

[0053]

As described in detail above, the plasma processing apparatus according to the first and third aspects of the present invention has a long life and a running cost of the plasma processing apparatus because the cylindrical body made of alumina is disposed. Is low. Further, even when the cylinder is sputtered by plasma, contamination is prevented as much as possible. Further, while the utilization efficiency of the microwave is improved, even when a sensor for detecting the temperature of the cylindrical body is attached to the outer peripheral surface of the cylindrical body, the sensor is not affected by the microwave and the temperature is not affected. Can be detected.

In the plasma processing apparatus according to the second aspect of the present invention, the temperature of the cylindrical body is adjusted to a required temperature by flowing the heat medium through the flow path provided in the gap between the cylindrical body and the outer cylindrical body. The object can be plasma-processed with high accuracy.

In the plasma processing apparatus according to the fourth and fifth aspects of the present invention, the alumina formed as a plasma-resistant layer on the inner surface of the cylindrical body formed of quartz is formed by thermal spraying in addition to being hardly sputtered by plasma. Therefore, the thickness is relatively thick and the life is long. Therefore, the running cost of the plasma processing apparatus is low. Further, even when the plasma resistant layer is sputtered by plasma, the generation of contamination is prevented as much as possible. Further, even if the quartz is exposed and the portion is sputtered by plasma, contamination hardly occurs.

In the plasma processing apparatus according to the sixth aspect of the present invention, the life of the cylindrical body can be further extended by performing a regeneration operation of laminating a plasma-resistant layer on the inner surface of the cylindrical body. The present invention has excellent effects such as the running cost of the apparatus can be further reduced.

[Brief description of the drawings]

FIG. 1 is a side sectional view showing a structure of a plasma processing apparatus according to the present invention.

FIG. 2 is a partially enlarged view of the plasma processing apparatus shown in FIG.

FIG. 3 is a side sectional view showing a second embodiment.

FIG. 4 is a side sectional view showing a third embodiment.

5 is a partially enlarged view of the plasma processing apparatus shown in FIG.

FIG. 6 is a side sectional view showing a fourth embodiment.

7 is a partially enlarged view of the plasma processing apparatus shown in FIG.

FIG. 8 is a side sectional view showing a conventional plasma processing apparatus.

FIG. 9 is a plan view showing a conventional plasma processing apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 1st container 2 2nd container 3 Reactor 4 Bottom 5 Outer cylinder part 6 Inner cylinder part 6a Inner cylinder body 6b Microwave reflection layer 6c Plasma resistant layer 7a Inner cylinder body 7b Microwave reflection layer 8 Protective ring 8a Protective ring body 8b Microwave reflection layer 8c Plasma resistant layer 10 Gas passage 23 Mounting table W Sample

Claims (6)

[Claims] A plasma is generated in a container by transmitting microwaves through a microwave window into a bottomed cylindrical container having an opening sealed with a microwave window. An apparatus for processing an object to be processed disposed in a container by using plasma, wherein a cylindrical body formed of a dielectric has an opening of the cylindrical body facing the microwave window to generate plasma in the container. Is arranged to surround the outer surface of the cylindrical body,
A plasma processing apparatus, comprising a microwave reflection layer for reflecting microwaves. 2. The plasma processing apparatus according to claim 1, wherein a metal outer cylinder is disposed around the cylinder, and a flow passage for allowing a heat medium to flow is provided between the two. 3. The plasma processing apparatus according to claim 1, wherein said cylindrical body is formed of alumina. 4. The plasma processing apparatus according to claim 1, wherein the cylindrical body is formed of quartz, and a plasma-resistant layer having corrosion resistance to plasma is provided on an inner peripheral surface of the cylindrical body. 5. The plasma processing apparatus according to claim 4, wherein said plasma resistant layer is formed by spraying alumina. 6. The plasma processing apparatus according to claim 1, wherein the cylinder is detachably provided.