JP2000338146A - Current detecting circuit - Google Patents
Current detecting circuitInfo
- Publication number
- JP2000338146A JP2000338146A JP11145779A JP14577999A JP2000338146A JP 2000338146 A JP2000338146 A JP 2000338146A JP 11145779 A JP11145779 A JP 11145779A JP 14577999 A JP14577999 A JP 14577999A JP 2000338146 A JP2000338146 A JP 2000338146A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- circuit
- current
- resistor
- current detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Indication And Recording Devices For Special Purposes And Tariff Metering Devices (AREA)
- Measurement Of Current Or Voltage (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、パワーデバイスに
流れる主電流を検出する電流検出回路に関するものであ
る。The present invention relates to a current detection circuit for detecting a main current flowing in a power device.
【０００２】[0002]
【従来の技術】この種の電流検出回路は、図５に示すよ
うに、主電流が流れるパワーデバイス１（以下、メイン
ＭＯＳという）に、前記主電流を分流させる分流経路４
を並列接続し、前記分流経路４に、直列接続した分流用
トランジスタ２（以下、センスＭＯＳという）と電流検
出抵抗３を設け、前記電流検出抵抗３の上流側からの検
出信号Ｖｏｕｔを出力し、前記検出信号Ｖｏｕｔをもと
にパワーデバイス１に流れる主電流を検出するものであ
る。前記電流検出抵抗３は、センスＭＯＳ２のオン抵抗
に比べて大きな値で、温度係数が小さい抵抗である。電
流検出方法は以下のように行われる。メインＭＯＳ１及
びセンスＭＯＳ２のゲート電位は共通となっているた
め、メインＭＯＳ１の通電時には、センスＭＯＳ２にも
通電される。メインＭＯＳ１が線形領域で動作してい
て、ゲート電位が一定であれば、メインＭＯＳ１のドレ
イン電圧ＶＤの測定によりドレイン電流がわかる。ここ
で、電流検出抵抗３は、センスＭＯＳ２のオン抵抗に比
べて大きな抵抗値のものを選定しているため、メインＭ
ＯＳ１のドレイン電圧ＶＤと電流検出抵抗３の電圧ＶＳ
はほぼ等しくなる。よって、既知の関係であるメインＭ
ＯＳ１のドレイン電圧ＶＤとドレイン電流ＩＤの関係の
ドレイン電圧ＶＤに、分流用トランジスタ２と電流検出
抵抗３の間からの検出信号の電圧Ｖｏｕｔを代入して算
出すれば、メインＭＯＳ１のドレイン電流ＩＤ、つま
り、主電流を検出することができる。2. Description of the Related Art As shown in FIG. 5, a current detecting circuit of this kind is a shunt path 4 for shunting a main current to a power device 1 (hereinafter referred to as a main MOS) through which a main current flows.
Are connected in parallel, a shunt transistor 2 (hereinafter referred to as a sense MOS) and a current detection resistor 3 connected in series are provided in the shunt path 4, and a detection signal Vout from the upstream side of the current detection resistor 3 is output. The main current flowing in the power device 1 is detected based on the detection signal Vout. The current detection resistor 3 has a larger value than the ON resistance of the sense MOS 2 and has a small temperature coefficient. The current detection method is performed as follows. Since the gate potentials of the main MOS 1 and the sense MOS 2 are common, when the main MOS 1 is energized, the sense MOS 2 is also energized. If the main MOS1 operates in the linear region and the gate potential is constant, the drain current can be determined by measuring the drain voltage VD of the main MOS1. Here, the current detection resistor 3 is selected to have a larger resistance value than the ON resistance of the sense MOS 2.
OS1 drain voltage VD and current detection resistor 3 voltage VS
Are almost equal. Therefore, the known relationship between the main M
By calculating by substituting the voltage Vout of the detection signal from between the shunt transistor 2 and the current detection resistor 3 into the drain voltage VD of the relationship between the drain voltage VD of the OS1 and the drain current ID, That is, the main current can be detected.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記従
来の電流検出回路においては、メインＭＯＳ１の温度が
上昇すると、メインＭＯＳ１と電流検出抵抗３の温度特
性の違いにより、電流検出抵抗３の電圧ＶＳから算出し
て求めた主電流の値と、メインＭＯＳ１に流れる実際の
主電流の値には大きな差が生じるという問題があった。
この誤差要因を、図６を用いて詳述する。図６に示すグ
ラフは、メインＭＯＳ１の温度特性を示したものであ
る。横軸をドレイン電圧ＶＤに、縦軸をドレイン電流
（主電流）とした。メインＭＯＳ１の温度が低い場合
（例えば、常温）の特性は、直線Ａで、メインＭＯＳ１
の温度が上昇した時の特性は、直線Ｂのようになる。メ
インＭＯＳ１の温度が低い場合には、ドレイン電圧がＶ
Ｄ１に対し、ドレイン電流がＩＤ１となり、電流検出抵
抗３で検出した主電流の値とほぼ一致する。しかし、メ
インＭＯＳ１の温度が上昇した場合には、直線Ｂのよう
に、実際にメインＭＯＳ１に流れるドレイン電流はＩＤ
２となる。一方、電流検出抵抗３で検出する主電流の値
はメインＭＯＳ１の温度が低い場合の値（ＩＤ１）を検
出するため、Ｖｘ（＝ＩＤ１−ＩＤ２）だけ誤差が生じ
る。However, in the above-described conventional current detection circuit, when the temperature of the main MOS 1 rises, the difference between the temperature characteristics of the main MOS 1 and the current detection resistor 3 causes the voltage VS of the current detection resistor 3 to decrease. There is a problem that a large difference occurs between the value of the calculated main current and the value of the actual main current flowing through the main MOS1.
This error factor will be described in detail with reference to FIG. The graph shown in FIG. 6 shows the temperature characteristics of the main MOS1. The horizontal axis is the drain voltage VD, and the vertical axis is the drain current (main current). When the temperature of the main MOS 1 is low (for example, normal temperature), the characteristic is represented by a straight line A,
The characteristic when the temperature rises is as shown by a straight line B. When the temperature of the main MOS 1 is low, the drain voltage becomes V
The drain current becomes ID1 with respect to D1, and substantially coincides with the value of the main current detected by the current detection resistor 3. However, when the temperature of the main MOS 1 rises, the drain current actually flowing through the main MOS 1 becomes ID
It becomes 2. On the other hand, the value of the main current detected by the current detection resistor 3 is a value (ID1) when the temperature of the main MOS 1 is low, so that an error occurs by Vx (= ID1−ID2).
【０００４】本発明は、上記事由に鑑みてなしたもの
で、その目的とするところは、パワーデバイスの温度が
変化しても、パワーデバイスに流れる主電流を精度良く
検出する電流検出回路を提供することにある。The present invention has been made in view of the above circumstances, and has as its object to provide a current detection circuit for accurately detecting a main current flowing through a power device even when the temperature of the power device changes. Is to do.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するため
に、本発明の電流検出回路は、主電流が流れるパワーデ
バイスに、前記主電流を分流させる分流経路を並列接続
し、前記分流経路に、直列接続した分流用トランジスタ
と電流検出抵抗を設け、前記分流用トランジスタと電流
検出抵抗の間から検出される検出信号をもとにパワーデ
バイスに流れる主電流を求める電流検出回路において、
前記分流経路に、パワーデバイスのオン抵抗の温度特性
により変化した検出信号を、パワーデバイスの温度に応
じて補正する温度補償回路を接続してなることを特徴と
するものである。In order to achieve the above object, a current detection circuit according to the present invention comprises a power device through which a main current flows, and a shunt path for shunting the main current connected in parallel to the power device. A current detection circuit for providing a shunt transistor and a current detection resistor connected in series, and obtaining a main current flowing through the power device based on a detection signal detected from between the shunt transistor and the current detection resistor;
A temperature compensating circuit for correcting a detection signal, which has changed due to the temperature characteristic of the on-resistance of the power device, in accordance with the temperature of the power device is connected to the shunt path.
【０００６】したがって、パワーデバイスの温度に反応
した温度補償回路が、電流検出抵抗からの検出信号を、
パワーデバイスの温度変化に対応して補正するため、パ
ワーデバイスのオン抵抗の温度特性を補償して、主電流
を精度良く検出することができる。Therefore, the temperature compensating circuit responding to the temperature of the power device converts the detection signal from the current detecting resistor into
Since the correction is performed according to the temperature change of the power device, the temperature characteristic of the ON resistance of the power device is compensated, and the main current can be detected with high accuracy.
【０００７】[0007]
【発明の実施の形態】図１は、本発明の第１の実施の形
態を示し、図２は、本発明の第２の実施の形態を示し、
図３は、本発明の第３の実施の形態を示し、図４は、本
発明の第４の実施の形態を示している。FIG. 1 shows a first embodiment of the present invention, and FIG. 2 shows a second embodiment of the present invention.
FIG. 3 shows a third embodiment of the present invention, and FIG. 4 shows a fourth embodiment of the present invention.
【０００８】［第１の実施の形態］図１は、第１の実施
の形態の概略を示す回路図である。[First Embodiment] FIG. 1 is a circuit diagram schematically showing a first embodiment.
【０００９】この実施の形態の電流検出回路は、主電流
が流れるパワーデバイス１に、前記主電流を分流させる
分流経路４を並列接続し、前記分流経路４に、直列接続
した分流用トランジスタ２と電流検出抵抗３を設け、前
記分流用トランジスタ２と電流検出抵抗３の間から検出
される検出信号をもとにパワーデバイス１に流れる主電
流を求める電流検出回路において、前記分流経路４に、
パワーデバイス１のオン抵抗の温度特性により変化した
検出信号を、パワーデバイス１の温度に応じて補正する
温度補償回路６を接続している。また、この実施の形態
のパワーデバイス１は、ＭＯＳトランジスタとしてい
る。The current detection circuit according to this embodiment includes a shunt path 4 for shunting the main current connected in parallel to a power device 1 through which a main current flows, and a shunt transistor 2 connected in series to the shunt path 4. A current detection resistor 3 is provided, and in a current detection circuit for obtaining a main current flowing through the power device 1 based on a detection signal detected between the shunt transistor 2 and the current detection resistor 3, the shunt path 4
A temperature compensating circuit 6 for correcting a detection signal changed by the temperature characteristic of the ON resistance of the power device 1 in accordance with the temperature of the power device 1 is connected. Further, the power device 1 of this embodiment is a MOS transistor.
【００１０】前記温度補償回路は、パワーデバイス１の
温度特性に応じて変化した分流用トランジスタと電流検
出抵抗の間からの検出信号Ｖｏｕｔを、既知の関係であ
るパワーデバイス１のドレイン電圧ＶＤとドレイン電流
ＩＤの関係になるように、パワーデバイスの温度特性に
応じて前記検出信号を補正（具体的には、図６で示した
パワーデバイスの温度特性によりずれたＶｘを、直線Ａ
の関係になるようにする）し、パワーデバイス１に流れ
る主電流を検出するものである。The temperature compensation circuit converts a detection signal Vout from between the shunt transistor and the current detection resistor, which has changed according to the temperature characteristic of the power device 1, to a drain voltage VD and a drain voltage of the power device 1 which have a known relationship. The detection signal is corrected according to the temperature characteristics of the power device so that the current ID is satisfied (specifically, Vx shifted by the temperature characteristics of the power device shown in FIG.
And the main current flowing through the power device 1 is detected.
【００１１】したがって、パワーデバイス１の温度に反
応した温度補償回路６が、電流検出抵抗３からの検出信
号を、パワーデバイス１の温度変化に応じて補正するた
め、パワーデバイス１のオン抵抗の温度特性を補償し
て、主電流を精度良く検出することができる。また、パ
ワーデバイス１の温度が温度補償回路６に伝わりやすい
という意味で、集積化されていることが望ましいが、温
度補償回路６とパワーデバイス１の良好な熱結合が実現
できれば、ディスクリート部品で構成しても同様の効果
が得られる。Therefore, the temperature compensating circuit 6 responding to the temperature of the power device 1 corrects the detection signal from the current detecting resistor 3 according to the temperature change of the power device 1. The main current can be accurately detected by compensating the characteristics. In addition, it is desirable that the power device 1 be integrated in the sense that the temperature of the power device 1 is easily transmitted to the temperature compensating circuit 6. The same effect can be obtained even if the same is performed.
【００１２】［第２の実施の形態］図２は、第２の実施
の形態の概略を示す回路図である。[Second Embodiment] FIG. 2 is a circuit diagram schematically showing a second embodiment.
【００１３】この実施の形態は、温度補償回路６の構成
のみが第１の実施の形態と異なるもので、他の構成部材
は第１の実施の形態のものと同一である。This embodiment differs from the first embodiment only in the configuration of the temperature compensating circuit 6, and the other components are the same as those in the first embodiment.
【００１４】このものの温度補償回路６は、負の温度係
数を有する感熱素子５の下流側に温度係数の小さい抵抗
９を直列接続したものである。また、感熱素子５を、Ｎ
ＭＯＳトランジスタ７としている。図２に示すＮＭＯＳ
トランジスタ７は、しきい値以上でなければ動作しない
エンハンストＭＯＳよりも、デプレッションＭＯＳが好
ましい。ドレイン電流ＩＤが大きい場合には、エンハン
ストＭＯＳでも構わない。第１の実施の形態同様、パワ
ーデバイス１とＮＭＯＳトランジスタ７との集積化が望
ましいが、ＮＭＯＳトランジスタ７とパワーデバイス１
の良好な熱結合が実現できれば、ディスクリート部品で
構成してもよい。The temperature compensating circuit 6 has a resistor 9 having a small temperature coefficient connected in series downstream of the thermosensitive element 5 having a negative temperature coefficient. Further, the thermal element 5 is
The MOS transistor 7 is used. NMOS shown in FIG.
The transistor 7 is preferably a depletion MOS rather than an enhanced MOS that does not operate unless it is equal to or higher than a threshold. If the drain current ID is large, an enhanced MOS may be used. As in the first embodiment, it is desirable that the power device 1 and the NMOS transistor 7 be integrated.
As long as good thermal coupling can be realized, discrete components may be used.
【００１５】また、上記感熱素子５を、負の温度係数を
有するダイオードとした場合には、ダイオードの特性及
び回路上に設ける個数を変化させて調整すれば、さらに
精度の良い補正をすることができる。また、上記感熱素
子５を、不純物を低濃度に注入した負の温度係数を有す
るポリシリコン抵抗とした場合には、ポリシリコンに注
入した不純物の濃度により温度特性が変化するため、不
純物の濃度を微調整すれば、さらに精度の良い補正をす
ることができる。また、上記感熱素子５を、負の温度係
数を有するサーミスタでもよい。When the heat-sensitive element 5 is a diode having a negative temperature coefficient, a more accurate correction can be made by changing the characteristics of the diode and the number of diodes provided on the circuit. it can. When the thermal element 5 is a polysilicon resistor having a negative temperature coefficient in which an impurity is implanted at a low concentration, the temperature characteristic changes depending on the concentration of the impurity implanted in the polysilicon. Fine adjustment allows more accurate correction. Further, the thermal element 5 may be a thermistor having a negative temperature coefficient.
【００１６】［第３の実施の形態］図３は、第３の実施
の形態の概略を示す回路図である。[Third Embodiment] FIG. 3 is a circuit diagram schematically showing a third embodiment.
【００１７】この実施の形態は、温度補償回路６の構成
のみが第１の実施の形態と異なるもので、他の構成部材
は第１の実施の形態のものと同一である。This embodiment differs from the first embodiment only in the configuration of the temperature compensating circuit 6, and the other components are the same as those in the first embodiment.
【００１８】このものの温度補償回路６は、負の温度係
数を有する感熱素子５と温度係数の小さい抵抗９の直列
回路と、前記直列回路の両端に定電圧を印加する定電圧
源８と、前記検出信号と感熱素子５と抵抗９の間からの
検出信号の電位差に応じて温度補償信号を出力する比較
器と、を設けたものとしている。また、定電圧源８は、
ツェナーダイオードと温度係数の小さい抵抗９で構成し
ている。The temperature compensating circuit 6 comprises a series circuit of a thermosensitive element 5 having a negative temperature coefficient and a resistor 9 having a small temperature coefficient, a constant voltage source 8 for applying a constant voltage to both ends of the series circuit, And a comparator that outputs a temperature compensation signal in accordance with a potential difference between the detection signal and the detection signal between the thermosensitive element 5 and the resistor 9. Further, the constant voltage source 8
It comprises a Zener diode and a resistor 9 having a small temperature coefficient.
【００１９】したがって、電流検出回路を製作した後で
も、比較器による温度補償信号の微調整が可能である。Therefore, even after the current detection circuit is manufactured, fine adjustment of the temperature compensation signal by the comparator is possible.
【００２０】また、上記感熱素子５を、ＮＭＯＳトラン
ジスタ７、負の温度係数を有するダイオード、不純物を
低濃度に注入した負の温度係数を有するポリシリコン抵
抗、負の温度係数を有するサーミスタのいずれかにした
場合には、第２の実施の形態と同様の効果が得られる。The thermal element 5 may be any one of an NMOS transistor 7, a diode having a negative temperature coefficient, a polysilicon resistor having a negative temperature coefficient into which impurities are implanted at a low concentration, and a thermistor having a negative temperature coefficient. In this case, the same effect as in the second embodiment can be obtained.
【００２１】［第４の実施の形態］図４は、第４の実施
の形態の概略を示す回路図である。[Fourth Embodiment] FIG. 4 is a circuit diagram schematically showing a fourth embodiment.
【００２２】この実施の形態は、温度補償回路６の構成
のみが第１の実施の形態と異なるもので、他の構成部材
は第１の実施の形態のものと同一である。This embodiment differs from the first embodiment only in the configuration of the temperature compensating circuit 6, and the other components are the same as those in the first embodiment.
【００２３】このものの温度補償回路６は、温度係数の
小さい抵抗９と正の温度係数を有する感熱素子５の直列
回路と、前記直列回路の両端に定電圧を印加する定電圧
源８と、前記検出信号と感熱素子５と抵抗９の間からの
検出信号の電位差に応じて温度補償信号を出力する比較
器と、を設けたものとしている。The temperature compensating circuit 6 comprises a series circuit of a resistor 9 having a small temperature coefficient and a thermosensitive element 5 having a positive temperature coefficient; a constant voltage source 8 for applying a constant voltage to both ends of the series circuit; And a comparator that outputs a temperature compensation signal in accordance with a potential difference between the detection signal and the detection signal between the thermosensitive element 5 and the resistor 9.
【００２４】第２乃至第３の実施の形態と比較すると、
上流側から見て、感熱素子５と電流検出抵抗３の設置順
序が逆となっているが、これは、正の温度係数を有する
感熱素子５を設ける場合、第２乃至第３の実施の形態と
同様に設けると、温度の上昇に伴い温度補償信号の電圧
が大きくなり、検出される電圧の取り扱いやすさ、つま
り、小さい電圧のほうが取り扱いやすいことを考慮した
ためである。In comparison with the second and third embodiments,
The order of installation of the thermosensitive element 5 and the current detection resistor 3 is reversed when viewed from the upstream side. This is because the thermosensitive element 5 having a positive temperature coefficient is provided in the second and third embodiments. This is because the voltage of the temperature compensation signal increases as the temperature rises, and the detected voltage is easy to handle, that is, the smaller voltage is easier to handle.
【００２５】[0025]
【発明の効果】上述の如く、本発明の請求項１記載の電
流検出回路は、パワーデバイスの温度に反応した温度補
償回路が、電流検出抵抗からの検出信号を、パワーデバ
イスの温度変化に対応して補正するため、パワーデバイ
スのオン抵抗の温度特性を補償して、主電流を精度良く
検出することができる。As described above, in the current detecting circuit according to the first aspect of the present invention, the temperature compensating circuit responding to the temperature of the power device responds to the detection signal from the current detecting resistor in response to the temperature change of the power device. Therefore, the temperature characteristic of the ON resistance of the power device can be compensated, and the main current can be detected with high accuracy.
【００２６】また、請求項２乃至請求項６記載の電流検
出回路は、請求項１記載のものの効果に加え、パワーデ
バイスの温度上昇に伴い、検出信号の電圧が小さくなる
ので、回路上取り扱いやすい電圧とすることができる。In addition, in the current detection circuit according to the second to sixth aspects, in addition to the effect of the first aspect, the voltage of the detection signal decreases as the temperature of the power device rises, so that the circuit is easy to handle. It can be a voltage.
【００２７】また、請求項７記載の電流検出回路は、請
求項２又は請求項３記載のものの効果に加え、ダイオー
ドの個数で、前記抵抗の温度特性を調整することができ
るので、温度補正に関する回路設計が簡易となるととも
に、さらに精度の良い温度補正をすることができる。In addition, the current detection circuit according to claim 7 can adjust the temperature characteristic of the resistor by the number of diodes, in addition to the effect of the second or third embodiment. The circuit design is simplified, and more accurate temperature correction can be performed.
【００２８】また、請求項８記載の電流検出回路は、請
求項２又は請求項３記載のものの効果に加え、ポリシリ
コンに注入する不純物の濃度を変化させて、前記抵抗の
温度特性を調整することができるので、さらに精度の良
い温度補正をすることができる。The current detection circuit according to the present invention adjusts the temperature characteristics of the resistor by changing the concentration of an impurity implanted into polysilicon, in addition to the effect of the second or third embodiment. Therefore, more accurate temperature correction can be performed.
【００２９】また、請求項９記載の電流検出回路は、請
求項４記載のものの効果に加え、ポリシリコンに注入す
る不純物の濃度を変化させて、前記抵抗の温度特性を調
整することができるので、さらに精度の良い温度補正を
することができる。Further, the current detecting circuit according to the ninth aspect can adjust the temperature characteristic of the resistor by changing the concentration of the impurity injected into the polysilicon in addition to the effect of the fourth aspect. In addition, more accurate temperature correction can be performed.
【図１】本発明の第１の実施の形態の概略を示す回路図
である。FIG. 1 is a circuit diagram schematically showing a first embodiment of the present invention.
【図２】本発明の第２の実施の形態の概略を示す回路図
である。FIG. 2 is a circuit diagram schematically showing a second embodiment of the present invention.
【図３】本発明の第３の実施の形態の概略を示す回路図
である。FIG. 3 is a circuit diagram schematically showing a third embodiment of the present invention.
【図４】本発明の第４の実施の形態の概略を示す回路図
である。FIG. 4 is a circuit diagram schematically showing a fourth embodiment of the present invention.
【図５】本発明の従来例の概略を示す回路図である。FIG. 5 is a circuit diagram schematically showing a conventional example of the present invention.
【図６】同従来例の要部の温度特性を示す説明図であ
る。FIG. 6 is an explanatory diagram showing temperature characteristics of main parts of the conventional example.
１ パワーデバイス ２ 分流用トランジスタ ３ 電流検出抵抗 ４ 分流経路 ５ 感熱素子 ６ 温度補償回路 ７ ＮＭＯＳトランジスタ ８ 定電圧源 ９ 抵抗 REFERENCE SIGNS LIST 1 power device 2 shunt transistor 3 current detection resistor 4 shunt path 5 thermal element 6 temperature compensation circuit 7 NMOS transistor 8 constant voltage source 9 resistance
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 27/088 29/78 (72)発明者 杉浦 義幸 大阪府門真市大字門真1048番地松下電工株 式会社内 Ｆターム(参考） 2F075 AA03 BB03 EE05 EE06 EE07 EE08 2G035 AA03 AA06 AB02 AC01 AC02 AD03 AD07 AD10 AD23 5F038 AR09 AR28 AR30 AZ10 CD11 DF01 EZ20 5F048 AA00 AB10 AC06 AC10 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 27/088 29/78 (72) Inventor Yoshiyuki Sugiura 1048 Kazuma, Kazuma, Osaka Matsushita Electric Works, Ltd. F term (reference) 2F075 AA03 BB03 EE05 EE06 EE07 EE08 2G035 AA03 AA06 AB02 AC01 AC02 AD03 AD07 AD10 AD23 5F038 AR09 AR28 AR30 AZ10 CD11 DF01 EZ20 5F048 AA00 AB10 AC06 AC10
Claims (9)
主電流を分流させる分流経路を並列接続し、前記分流経
路に、直列接続した分流用トランジスタと電流検出抵抗
を設け、前記分流用トランジスタと電流検出抵抗の間か
ら検出される検出信号をもとにパワーデバイスに流れる
主電流を求める電流検出回路において、前記分流経路
に、パワーデバイスのオン抵抗の温度特性により変化し
た検出信号をパワーデバイスの温度に応じて補正する温
度補償回路を接続してなることを特徴とする電流検出回
路。1. A shunt path for shunting the main current is connected in parallel to a power device through which a main current flows, and a shunt transistor and a current detection resistor connected in series are provided on the shunt path. In a current detection circuit for obtaining a main current flowing through a power device based on a detection signal detected from between detection resistors, a detection signal changed by a temperature characteristic of an on-resistance of the power device is supplied to the shunt path. A current compensation circuit connected to a temperature compensation circuit for compensating according to the following.
する感熱素子の下流側に温度係数の小さい抵抗を直列接
続してなるものであることを特徴とする請求項１記載の
電流検出回路。2. The current detecting circuit according to claim 1, wherein said temperature compensating circuit comprises a series connection of a resistor having a small temperature coefficient downstream of the thermosensitive element having a negative temperature coefficient. .
する感熱素子と温度係数の小さい抵抗の直列回路と、前
記直列回路の両端に定電圧を印加する定電圧源と、前記
検出信号と感熱素子と抵抗の間からの検出信号の電位差
に応じて温度補償信号を出力する比較器と、を設けてな
るものであることを特徴とする請求項１記載の電流検出
回路。3. A temperature compensation circuit comprising: a series circuit of a thermosensitive element having a negative temperature coefficient and a resistor having a small temperature coefficient; a constant voltage source for applying a constant voltage to both ends of the series circuit; 2. The current detection circuit according to claim 1, further comprising: a comparator that outputs a temperature compensation signal in accordance with a potential difference of a detection signal from between the thermosensitive element and the resistor.
抵抗と正の温度係数を有する感熱素子の直列回路と、前
記直列回路の両端に定電圧を印加する定電圧源と、前記
検出信号と感熱素子と抵抗の間からの検出信号の電位差
に応じて温度補償信号を出力する比較器と、を設けてな
るものであることを特徴とする請求項１記載の電流検出
回路。4. The temperature compensation circuit according to claim 1, wherein the temperature compensation circuit includes a series circuit of a resistance element having a small temperature coefficient and a thermosensitive element having a positive temperature coefficient; a constant voltage source for applying a constant voltage to both ends of the series circuit; 2. The current detection circuit according to claim 1, further comprising: a comparator that outputs a temperature compensation signal in accordance with a potential difference of a detection signal from between the thermosensitive element and the resistor.
であることを特徴とする請求項２又は請求項３記載の電
流検出回路。5. The current detection circuit according to claim 2, wherein said thermal element is an NMOS transistor.
サーミスタであることを特徴とする請求項２又は請求項
３記載の電流検出回路。6. The current detection circuit according to claim 2, wherein the heat-sensitive element is a thermistor having a negative temperature coefficient.
を特徴とする請求項２又は請求項３記載の電流検出回
路。7. The current detection circuit according to claim 2, wherein the heat-sensitive element is a diode.
抗であることを特徴とする請求項２又は請求項３記載の
電流検出回路。8. The current detection circuit according to claim 2, wherein the thermal element is a low-concentration polysilicon resistor.
したポリシリコン抵抗であることを特徴とする請求項４
記載の電流検出回路。9. The device according to claim 4, wherein said thermal element is a polysilicon resistor into which impurities are implanted at a high concentration.
The current detection circuit as described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11145779A JP2000338146A (en) | 1999-05-26 | 1999-05-26 | Current detecting circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11145779A JP2000338146A (en) | 1999-05-26 | 1999-05-26 | Current detecting circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000338146A true JP2000338146A (en) | 2000-12-08 |
Family
ID=15392984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11145779A Pending JP2000338146A (en) | 1999-05-26 | 1999-05-26 | Current detecting circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000338146A (en) |
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|---|---|---|---|---|
| JP2003289668A (en) * | 2002-03-27 | 2003-10-10 | Densei Lambda Kk | Feedback circuit for power supply unit |
| JP2006017470A (en) * | 2004-06-30 | 2006-01-19 | Tdk Corp | Electric current detecting circuit |
| EP1657557A1 (en) * | 2004-11-04 | 2006-05-17 | Hitachi, Ltd. | Current sensing method and current sensing device, power conversion device using this current sensing device, and vehicle using this power conversion device |
| WO2006068082A1 (en) * | 2004-12-22 | 2006-06-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
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