JP2000327685A - Production of silylated aniline derivative - Google Patents

Production of silylated aniline derivative

Info

Publication number
JP2000327685A
JP2000327685A JP13863999A JP13863999A JP2000327685A JP 2000327685 A JP2000327685 A JP 2000327685A JP 13863999 A JP13863999 A JP 13863999A JP 13863999 A JP13863999 A JP 13863999A JP 2000327685 A JP2000327685 A JP 2000327685A
Authority
JP
Japan
Prior art keywords
mol
formula
dbu
silylated
aniline derivative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13863999A
Other languages
Japanese (ja)
Other versions
JP4282146B2 (en
Inventor
Noriyuki Koike
則之 小池
Takashi Matsuda
高至 松田
Yasunori Sakano
安則 坂野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP13863999A priority Critical patent/JP4282146B2/en
Publication of JP2000327685A publication Critical patent/JP2000327685A/en
Application granted granted Critical
Publication of JP4282146B2 publication Critical patent/JP4282146B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a method for producing a silylated aniline compound, capable of producing the subject derivative useful as an intermediate for synthesizing, etc., at an increased reaction rate in a high yield, by reacting a specific aniline derivative with a specified halogenated organosilicon compound in the presence of a tertiary amine containing diazabicycloundecene in a prescribed amount. SOLUTION: This method for producing a silylated aniline compound comprises subjecting an aniline derivative expressed by formula I [R1 to R5 are each H, a halogen, a 1-6C (substituted)momovalent hydrocarbon; R6 is a 1-6C (substituted)momovalent hydrocarbon] and a halogenated organosilicon compound expressed by formula II [R7 to R9 are each a 1-6C (substituted) momovalent hydrocarbon; X is a halogen] to dehalogenating hydrogenation reaction in the presence of a tertiary amine containing 1,8-diaza- bicyclo[5,4,0]undec-7-ene (DBU) in an amount of 0.5-20 mol% as a base to form a silylated aniline compound of formula III. Triethylamine containing DBU in an amount of 0.5-20 mol% is preferably used as the base.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は医農薬中間体、染料
中間体、高分子修飾の原料として有用なシリル化された
アニリン誘導体を工業的有利に製造する方法を提供する
ものである。
TECHNICAL FIELD The present invention provides a process for industrially and advantageously producing silylated aniline derivatives useful as intermediates for medical and agricultural chemicals, dye intermediates and polymer modification.

【0002】[0002]

【従来の技術】従来、アニリン誘導体の窒素原子上にシ
リル基を導入する方法としては、下記のような方法が一
般的に知られている。 R-NH + (CH)SiCl + (CH)N → R-NHSi(CH
) + (CH)NHCl (Rはフェニル基を示す)この反応はアニリンのような
芳香族第一アミン類に関してはほぼ定量的に反応が進行
することが知られている。
2. Description of the Related Art Conventionally, as a method for introducing a silyl group onto a nitrogen atom of an aniline derivative, the following method is generally known. R-NH 2 + (CH 3 ) 3 SiCl + (C 2 H 5 ) 3 N → R-NHSi (CH
3 ) 3 + (C 2 H 5 ) NH + Cl (R represents a phenyl group) This reaction is known to proceed almost quantitatively for aromatic primary amines such as aniline. I have.

【0003】[0003]

【発明が解決しようとする課題】しかし、この方法は例
えばN−メチルアニリンからN−メチル−N−トリメチ
ルシリルアニリンを製造する場合のように、芳香族第二
アミン類に適用するにはいくつかの問題点がある。それ
はシリル化の反応速度が著しく低下するために、非常に
長い反応時間を要すること、また反応率が低く、反応混
合物に未反応の原料が混入することから目的物を蒸留で
分離するとき、さらに収率が低下してしまうことであ
る。このような場合、反応速度および反応率を向上させ
る目的でジアザ−ビシクロ(2,2,2)オクタン(D
ABCO)あるいはDBUなどの塩基を使用することも
できるが、これらの物質はいずれも高価であり、工業原
料として使用するにはコスト的に不利である。シリル化
反応終了後、反応混合物中には使用した塩基の塩酸塩お
よびシリル化された目的物が存在しているが、通常は苛
性ソーダ水溶液を添加して目的物を含む有機相と食塩お
よび塩基を含む水相とに分離する。水相は廃棄物となる
が、トリエチルアミンに代表される第三アミンについて
は溶媒抽出等の手法により排水から回収することが出来
るけれども、DBUの場合は苛性ソーダ水溶液中で分解
してしまうため回収することができない。従って、塩基
としてDBUを当量用いると最終的に有機物を大量に含
んだ排水を処理する必要が生じることになり、排水処理
の観点から好ましいものではない。本発明は、上記問題
点を解決するためになされたもので、窒素原子上に置換
基を有するアニリン類のシリル化反応時の反応速度を向
上させ、高い反応率を達成することができ且つ、DBU
の使用量が少なくてコスト的に有利な方法を提供するも
のである。
However, this method is not suitable for applying to aromatic secondary amines, for example, when producing N-methyl-N-trimethylsilylaniline from N-methylaniline. There is a problem. It requires a very long reaction time because the reaction rate of the silylation is remarkably reduced, and when the target product is separated by distillation because the reaction rate is low and unreacted raw materials are mixed in the reaction mixture, That is, the yield is reduced. In such a case, diaza-bicyclo (2,2,2) octane (D
Although a base such as ABCO) or DBU can be used, all of these substances are expensive and disadvantageous in terms of cost for use as an industrial raw material. After completion of the silylation reaction, the hydrochloride of the base used and the silylated target compound are present in the reaction mixture, and usually, an aqueous solution containing caustic soda is added to remove the organic phase containing the target compound, sodium chloride, and the base. Separate from the aqueous phase containing. The aqueous phase is a waste, but tertiary amines such as triethylamine can be recovered from wastewater by solvent extraction, etc., but DBUs should be recovered because they decompose in aqueous caustic soda. Can not. Therefore, when DBU is used in an equivalent amount as a base, wastewater containing a large amount of organic substances eventually needs to be treated, which is not preferable from the viewpoint of wastewater treatment. The present invention has been made in order to solve the above problems, to improve the reaction rate during the silylation reaction of anilines having a substituent on a nitrogen atom, it is possible to achieve a high reaction rate, DBU
The present invention provides a cost-effective method with a small amount of used.

【0004】[0004]

【課題を解決するための手段】即ち、本発明は下記一般
式(化4)
That is, the present invention provides a compound represented by the following general formula (4):

【化4】 (式中、R 、R 、R 、R 、R はそれぞ
れ水素原子、ハロゲン原子、炭素原子数1から6の置換
または非置換の一価炭化水素基を表し、R 、R
、R は炭素原子数1から6の置換または非置換
の一価炭化水素基を表し、R 〜R 、R 〜R
はそれぞれ互いに同一でも異種でもよい)で示されるシ
リル化されたアニリン誘導体を下記一般式(化5)
Embedded image (Wherein, R 1, R 2, R 3, R 4, R 5 are each a hydrogen atom, a halogen atom, a substituted or unsubstituted monovalent hydrocarbon group having 1 to 6 carbon atoms, R 6, R 7 ,
R 8 and R 9 represent a substituted or unsubstituted monovalent hydrocarbon group having 1 to 6 carbon atoms, and R 1 to R 5 , R 6 to R 9
May be the same as or different from each other), and a silylated aniline derivative represented by the following general formula (Formula 5)

【化5】 (式中、R 、R 、R 、R 、R 、R
上記と同じ)で示されるアニリン誘導体と下記一般式
(化6)
Embedded image (Wherein R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are the same as those described above) and the following general formula (Formula 6)

【化6】 (式中、R 、R 、R は上記と同じ、Xはハロ
ゲン原子を表す)で示されるハロゲン化有機珪素化合物
とを塩基の存在にて脱ハロゲン化水素反応して製造する
方法において、塩基としてDBUを 0.5〜20mol%含
有する第三アミンを使用する方法であって、これにより
高い反応速度と反応率が達成されることを見出し本発明
を完成させた。
Embedded image (Wherein, R 7 , R 8 and R 9 are the same as above, and X represents a halogen atom). A method using a tertiary amine containing 0.5 to 20 mol% of DBU as a base, thereby achieving a high reaction rate and a high conversion, thereby completing the present invention.

【0005】[0005]

【発明の実施の形態】以下、本発明を詳しく説明する。
本発明で使用可能な原料としては以下のものが挙げられ
る。本発明で使用されるアニリン誘導体は前記一般式
(化2)(式中、R 、R、R 、R 、R
は前記と同じ)で示されるアニリン誘導体であ
り、これを例示すると以下のものが挙げられるがこれに
限定されない。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail.
The raw materials that can be used in the present invention include the following. The aniline derivative used in the present invention is represented by the general formula (Formula 2) (wherein R 1 , R 2 , R 3 , R 4 , R 5 ,
R 6 is the same as defined above), and examples thereof include the following, but are not limited thereto.

【0006】[0006]

【化7】 Embedded image

【0007】本発明で使用されるハロゲン化有機珪素化
合物は前記一般式(化3)(式中、R 、R 、R
は前記と同じ、Xはハロゲン原子を表す)で示される
ハロゲン化有機珪素化合物であり、これを例示すると以
下のものが挙げられるがこれに限定されない。
Halogenated organosiliconization used in the present invention
The compound is represented by the general formula (Chemical Formula 3) 7 , R8 , R9
 Is the same as above, and X represents a halogen atom)
This is a halogenated organosilicon compound.
These include, but are not limited to:

【0008】[0008]

【化8】 Embedded image

【0009】前記アニリン誘導体とハロゲン化有機珪素
化合物とは任意の組み合わせで反応に使用することがで
きる。反応に使用するハロゲン化有機珪素化合物の量
は、アニリン誘導体の 1.0〜 1.5倍モル程度が好適であ
る。本発明で使用される塩基はDBUを 0.5〜20mol
%含有する第三アミンであり、第三アミンとしては、ト
リエチルアミン、トリプロピルアミン、トリブチルアミ
ン、トリメチルアミン、ジエチルメチルアミン、ブチル
ジメチルアミンなどが好適である。DBUの添加量は
0.5mol%未満であると反応速度が低く、20mol%
を超えるとコスト的に不利になるので 0.5〜20mol%
が好適であり、更に好ましくは 0.5〜10mol%であ
る。塩基としての使用量はDBUと第三アミンの総量で
アニリン誘導体の 1.0〜 1.5倍モルが好適である。
The aniline derivative and the halogenated organosilicon compound can be used in the reaction in any combination. The amount of the organosilicon halide compound used in the reaction is preferably about 1.0 to 1.5 times the molar amount of the aniline derivative. The base used in the present invention is DBU 0.5 to 20 mol.
%, And as the tertiary amine, triethylamine, tripropylamine, tributylamine, trimethylamine, diethylmethylamine, butyldimethylamine and the like are preferable. The amount of DBU added
If it is less than 0.5 mol%, the reaction rate is low, and 20 mol%
0.5 to 20 mol%
Is more preferable, and more preferably 0.5 to 10 mol%. The amount of the base used is preferably 1.0 to 1.5 times the molar amount of the aniline derivative in the total amount of DBU and the tertiary amine.

【0010】本発明のシリル化されたアニリン誘導体の
製造方法はアニリン誘導体と塩基を混合し、これを撹拌
しながらハロゲン化有機珪素化合物を添加することによ
り実施できる。このとき、アミンの塩酸塩が生成し次第
に撹拌が困難になるので、溶媒を添加して反応混合物を
希釈することがよい。溶媒としては沸点が40〜 180℃の
炭化水素系溶媒が好適であり、具体的にはヘキサン、ヘ
プタン、オクタン、ベンゼン、トルエン、キシレン、石
油エーテルなどが例示される。本発明のシリル化された
アニリン誘導体の製造方法における反応時間は30分〜20
時間であるが、通常は1時間から15時間程度である。反
応温度は特に制限はないが、概ね0〜80℃であり、最終
的な反応率を高めるためには40℃以下に冷却することが
よい。反応終了後、目的物の性状に合わせて単離操作を
行うことによりシリル化されたアニリン誘導体を得るこ
とができる。
The method for producing the silylated aniline derivative of the present invention can be carried out by mixing the aniline derivative with a base, and adding the organosilicon halide while stirring the mixture. At this time, since the stirring becomes difficult as soon as the hydrochloride of the amine is formed, it is preferable to dilute the reaction mixture by adding a solvent. As the solvent, a hydrocarbon solvent having a boiling point of 40 to 180 ° C. is suitable, and specific examples thereof include hexane, heptane, octane, benzene, toluene, xylene, petroleum ether and the like. The reaction time in the method for producing a silylated aniline derivative of the present invention is 30 minutes to 20 minutes.
Although it is time, it is usually about 1 hour to 15 hours. Although the reaction temperature is not particularly limited, it is generally 0 to 80 ° C, and it is preferable to cool the reaction temperature to 40 ° C or lower in order to increase the final reaction rate. After completion of the reaction, a silylated aniline derivative can be obtained by performing an isolation operation according to the properties of the target substance.

【0011】[0011]

【実施例】以下で、本発明を実施例により更に詳細に説
明するが、本発明はこれに限定されるものではない。 (実施例1)2リットル四つ口フラスコに3−クロロ−
N−メチルアニリン141.5g(1.00モル)、トリエチルア
ミン 84.8g(0.84モル)、DBU 31.9g(0.21モル)お
よびトルエン340gを仕込み、撹拌しながらクロロジメチ
ルビニルシラン122.9g(1.02モル)を滴下ロートより約
20分かけて加えた。滴下開始時にフラスコ内の温度は23
℃であったが、滴下終了時には52℃に上昇していた。次
いで、反応開始30分後に撹拌を停止し室温下に15時間放
置した。反応の進行状況は反応液のガスクロマトグラフ
ィーで追跡した。反応開始30分後の反応率は82%であ
り、反応開始1時間後の反応率は90%で、15時間放置後
の反応率は95%であった。次いで、撹拌しながら10%苛
性ソーダ水溶液を投入し生成したトリエチルアミンの塩
酸塩を溶解して静置し、有機相と水相とに分離し、目的
物を含むトルエン溶液(有機相)を回収した。得られた
トルエン溶液を蒸留して、1mmHgにおける沸点範囲98〜
99℃の3−クロロ−N−(ジメチルビニル)シリル−N
−メチルアニリン(純度99.8%)162.8gを得た。単離収
率72%であった。結果を表1に示した。
EXAMPLES Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited thereto. (Example 1) 3-chloro-
141.5 g (1.00 mol) of N-methylaniline, 84.8 g (0.84 mol) of triethylamine, 31.9 g (0.21 mol) of DBU and 340 g of toluene were charged, and while stirring, 122.9 g (1.02 mol) of chlorodimethylvinylsilane was added from a dropping funnel.
Added over 20 minutes. The temperature in the flask at the start of the drop is 23
° C, but had risen to 52 ° C at the end of the dropping. Next, 30 minutes after the start of the reaction, stirring was stopped and the mixture was left at room temperature for 15 hours. The progress of the reaction was monitored by gas chromatography of the reaction solution. The reaction rate 30 minutes after the start of the reaction was 82%, the reaction rate 1 hour after the start of the reaction was 90%, and the reaction rate after standing for 15 hours was 95%. Then, a 10% aqueous solution of caustic soda was added thereto with stirring to dissolve the formed triethylamine hydrochloride and allowed to stand, separated into an organic phase and an aqueous phase, and a toluene solution (organic phase) containing the desired product was recovered. The obtained toluene solution was distilled to obtain a boiling point range of 98 to 1 mmHg.
3-chloro-N- (dimethylvinyl) silyl-N at 99 ° C
162.8 g of -methylaniline (purity 99.8%) were obtained. The isolation yield was 72%. The results are shown in Table 1.

【0012】(実施例2)トリエチルアミンを 95.4g
(0.945 モル)、DBUを 16.0g(0.105 モル)使用し
た以外は実施例1と同様の操作を行った。結果はまとめ
て(表1)に示した。
Example 2 95.4 g of triethylamine
(0.945 mol), and the same operation as in Example 1 was carried out except that 16.0 g (0.105 mol) of DBU was used. The results are summarized in (Table 1).

【0013】(実施例3)トリエチルアミンを100.7g
(0.997 モル)、DBUを8.1g(0.053 モル)使用した
以外は実施例1と同様の操作を行った。結果はまとめて
(表1)に示した。
(Example 3) 100.7 g of triethylamine
(0.997 mol) and the same operation as in Example 1 except that 8.1 g (0.053 mol) of DBU was used. The results are summarized in (Table 1).

【0014】(比較例1)トリエチルアミンを106.1g
(1.05モル)を使用し、DBUを使用しなかったこと以
外は実施例1と同様の操作を行った。この場合、クロロ
ジメチルビニルシランを添加してもほとんど発熱しなか
った。
Comparative Example 1 106.1 g of triethylamine
(1.05 mol) and the same operation as in Example 1 was performed except that DBU was not used. In this case, almost no heat was generated even when chlorodimethylvinylsilane was added.

【0015】[0015]

【表1】 [Table 1]

【0016】[0016]

【発明の効果】本発明の方法は芳香族第二アミン類を用
いたシリル化反応時の反応速度を向上させ、高い反応率
を達成することができ且つ、DBUの使用量が少なくて
コスト的に有利である。
According to the method of the present invention, the reaction rate in the silylation reaction using an aromatic secondary amine can be improved, a high conversion can be achieved, and the amount of DBU used is small and cost reduction is achieved. Is advantageous.

─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───

【手続補正書】[Procedure amendment]

【提出日】平成11年12月16日(1999.12.
16)
[Submission date] December 16, 1999 (1999.12.
16)

【手続補正1】[Procedure amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】特許請求の範囲[Correction target item name] Claims

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【特許請求の範囲】[Claims]

【化1】 (式中、R 1 、R 2 、R 3 、R 4 、R 5 はそれぞれ水素
原子、ハロゲン原子、炭素原子数1から6の置換または
非置換の一価炭化水素基を表し、R 6 、R 7 、R 8 、R
9 は炭素原子数1から6の置換または非置換の一価炭化
水素基を表し、R 1 〜R 5 、R 6 〜R 9 はそれぞれ互い
に同一でも異種でもよい)で示されるシリル化されたア
ニリン誘導体を下記一般式(化2)
Embedded image (Wherein, R 1, R 2, R 3, R 4, R 5 are each a hydrogen atom, a halogen atom, a substituted or unsubstituted monovalent hydrocarbon group having 1 to 6 carbon atoms, R 6, R 7, R 8, R
And 9 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 6 carbon atoms, and R 1 to R 5 and R 6 to R 9 may be the same or different from each other.) The derivative is represented by the following general formula (Formula 2)

【化2】 (式中、R 1 、R 2 、R 3 、R 4 、R 5 、R 6 は上記と
同じ)で示されるアニリン誘導体と下記一般式(化3)
Embedded image (Wherein R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are the same as described above) and the following general formula (Formula 3)

【化3】 (式中、R 7 、R 8 、R 9 は上記と同じ、Xはハロゲン
原子を表す)で示されるハロゲン化有機珪素化合物とを
塩基の存在で脱ハロゲン化水素反応させて製造する方法
において、塩基として1,8−ジアザ−ビシクロ(5,
4,0)ウンデセン−7(以下DBUと略す)を 0.5〜
20mol%含有する第三アミンを使用することを特徴と
する一般式(化1)で示されるシリル化されたアニリン
誘導体の製造方法。
Embedded image (Wherein, R 7 , R 8 and R 9 are the same as above, and X represents a halogen atom), wherein the compound is produced by a dehydrohalogenation reaction in the presence of a base. 1,8-diaza-bicyclo (5,
4,0) Undecene-7 (hereinafter abbreviated as DBU) 0.5 ~
A method for producing a silylated aniline derivative represented by the general formula (1), wherein a tertiary amine containing 20 mol% is used.

【手続補正2】[Procedure amendment 2]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0004[Correction target item name] 0004

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0004】[0004]

【課題を解決するための手段】即ち、本発明は下記一般
式(化4)
That is, the present invention provides a compound represented by the following general formula (4):

【化4】 (式中、R 1 、R 2 、R 3 、R 4 、R 5 はそれぞれ水素
原子、ハロゲン原子、炭素原子数1から6の置換または
非置換の一価炭化水素基を表し、R 6 、R 7 、R 8 、R
9 は炭素原子数1から6の置換または非置換の一価炭化
水素基を表し、R 1 〜R 5 、R 6 〜R 9 はそれぞれ互い
に同一でも異種でもよい)で示されるシリル化されたア
ニリン誘導体を下記一般式(化5)
Embedded image (Wherein, R 1, R 2, R 3, R 4, R 5 are each a hydrogen atom, a halogen atom, a substituted or unsubstituted monovalent hydrocarbon group having 1 to 6 carbon atoms, R 6, R 7, R 8, R
And 9 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 6 carbon atoms, and R 1 to R 5 and R 6 to R 9 may be the same or different from each other.) The derivative is represented by the following general formula (Formula 5)

【化5】 (式中、R 1 、R 2 、R 3 、R 4 、R 5 、R 6 は上記と
同じ)で示されるアニリン誘導体と下記一般式(化6)
Embedded image (Wherein R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are the same as described above) and the following general formula (Formula 6)

【化6】 (式中、R 7 、R 8 、R 9 は上記と同じ、Xはハロゲン
原子を表す)で示されるハロゲン化有機珪素化合物とを
塩基の存在で脱ハロゲン化水素反応させて製造する方法
において、塩基として1,8−ジアザ−ビシクロ(5,
4,0)ウンデセン−7(以下DBUと略す)を 0.5〜
20mol%含有する第三アミンを使用する方法であっ
て、これにより高い反応速度と反応率が達成されること
を見出し本発明を完成させた。
Embedded image (Wherein, R 7 , R 8 and R 9 are the same as above, and X represents a halogen atom), wherein the compound is produced by a dehydrohalogenation reaction in the presence of a base. 1,8-diaza-bicyclo (5,
4,0) Undecene-7 (hereinafter abbreviated as DBU) 0.5 ~
This is a method using a tertiary amine containing 20 mol%, and it has been found that a high reaction rate and a high conversion rate can be achieved by this, and the present invention has been completed.

【手続補正3】[Procedure amendment 3]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0005[Correction target item name] 0005

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0005】[0005]

【発明の実施の形態】以下、本発明を詳しく説明する。
本発明で使用可能な原料としては以下のものが挙げられ
る。本発明で使用されるアニリン誘導体は前記一般式
(化2)(式中、R 1 、R 2 、R 3 、R 4 、R 5 、R 6
は前記と同じ)で示されるアニリン誘導体であり、これ
を例示すると以下のものが挙げられるがこれに限定され
ない。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail.
The raw materials that can be used in the present invention include the following. The aniline derivative used in the present invention is represented by the general formula (Chemical Formula 2) (wherein R 1 , R 2 , R 3 , R 4 , R 5 , and R 6).
Is the same as described above), and examples thereof include the following, but are not limited thereto.

【手続補正4】[Procedure amendment 4]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】0007[Correction target item name] 0007

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【0007】本発明で使用されるハロゲン化有機珪素化
合物は前記一般式(化3)(式中、R 7 、R 8 、R 9
前記と同じ、Xはハロゲン原子を表す)で示されるハロ
ゲン化有機珪素化合物であり、これを例示すると以下の
ものが挙げられるがこれに限定されない。
The halogenated organosilicon compound used in the present invention is a halogen represented by the above general formula (Chemical Formula 3) (wherein R 7 , R 8 and R 9 are the same as above, and X represents a halogen atom). Organosilicon compounds, examples of which include, but are not limited to, the following:

───────────────────────────────────────────────────── フロントページの続き (72)発明者 坂野 安則 群馬県碓氷郡松井田町大字人見1番地10 信越化学工業株式会社シリコーン電子材料 技術研究所内 Fターム(参考) 4H049 VN01 VP01 VQ38 VR10 VR20 VR30 VR51 VS09 VT43 VT48 VT49 VU01 VU06 VU20 VU29 VU36 VW02 VW33  ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Yasunori Sakano 1-10 Hitomi, Matsuida-cho, Usui-gun, Gunma Prefecture F-term in the Silicon Electronics Research Laboratory, Shin-Etsu Chemical Co., Ltd. 4H049 VN01 VP01 VQ38 VR10 VR20 VR30 VR51 VS09 VT43 VT48 VT49 VU01 VU06 VU20 VU29 VU36 VW02 VW33

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 下記一般式(化1) 【化1】 (式中、R 、R 、R 、R 、R はそれぞ
れ水素原子、ハロゲン原子、炭素原子数1から6の置換
または非置換の一価炭化水素基を表し、R 、R
、R は炭素原子数1から6の置換または非置換
の一価炭化水素基を表し、R 〜R 、R 〜R
はそれぞれ互いに同一でも異種でもよい)で示されるシ
リル化されたアニリン誘導体を下記一般式(化2) 【化2】 (式中、R 、R 、R 、R 、R 、R
上記と同じ)で示されるアニリン誘導体と下記一般式
(化3) 【化3】 (式中、R 、R 、R は上記と同じ、Xはハロ
ゲン原子を表す)で示されるハロゲン化有機珪素化合物
とを塩基の存在で脱ハロゲン化水素反応させて製造する
方法において、塩基として1,8−ジアザ−ビシクロ
(5,4,0)ウンデセン−7(以下DBUと略す)を
0.5〜20mol%含有する第三アミンを使用することを
特徴とする一般式(化1)で示されるシリル化されたア
ニリン誘導体の製造方法。
[Claim 1] The following general formula (Chemical formula 1) (Wherein, R 1, R 2, R 3, R 4, R 5 are each a hydrogen atom, a halogen atom, a substituted or unsubstituted monovalent hydrocarbon group having 1 to 6 carbon atoms, R 6, R 7 ,
R 8 and R 9 represent a substituted or unsubstituted monovalent hydrocarbon group having 1 to 6 carbon atoms, and R 1 to R 5 , R 6 to R 9
May be the same as or different from each other), and a silylated aniline derivative represented by the following general formula (Chemical Formula 2) (Wherein R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are the same as described above) and the following general formula (Formula 3) (Wherein, R 7 , R 8 and R 9 are the same as above, and X represents a halogen atom), wherein the compound is produced by a dehydrohalogenation reaction in the presence of a base. 1,8-diaza-bicyclo (5,4,0) undecene-7 (hereinafter abbreviated as DBU) as a base
A method for producing a silylated aniline derivative represented by the general formula (Chemical Formula 1), wherein a tertiary amine containing 0.5 to 20 mol% is used.
【請求項2】 塩基としてDBUを 0.5mol%〜20m
ol%含有するトリエチルアミンを使用することを特徴
とする請求項1記載のシリル化されたアニリン誘導体の
製造方法。
2. DBU is 0.5 mol% to 20 m as a base.
2. The method for producing a silylated aniline derivative according to claim 1, wherein triethylamine containing ol% is used.
JP13863999A 1999-05-19 1999-05-19 Method for producing silylated aniline derivative Expired - Fee Related JP4282146B2 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009137858A (en) * 2007-12-05 2009-06-25 Shin Etsu Chem Co Ltd Method for silylating amino group
WO2018003427A1 (en) * 2016-07-01 2018-01-04 Jnc株式会社 Method for producing n-silylaminoalkylsilane compounds
JP2018070488A (en) * 2016-10-27 2018-05-10 Jnc株式会社 Method for producing n-silyl-aminoalkylsilane compounds

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009137858A (en) * 2007-12-05 2009-06-25 Shin Etsu Chem Co Ltd Method for silylating amino group
WO2018003427A1 (en) * 2016-07-01 2018-01-04 Jnc株式会社 Method for producing n-silylaminoalkylsilane compounds
CN109415393A (en) * 2016-07-01 2019-03-01 捷恩智株式会社 The manufacturing method of N- silylamido alkyl silane cpd
US10435421B2 (en) 2016-07-01 2019-10-08 Jnc Corporation Method for producing N-silylaminoalkylsilane compound
CN109415393B (en) * 2016-07-01 2021-08-03 捷恩智株式会社 Process for producing N-silylaminoalkylsilane compound
JP2018070488A (en) * 2016-10-27 2018-05-10 Jnc株式会社 Method for producing n-silyl-aminoalkylsilane compounds

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