JP2000323643A - Ic element and its manufacture as well as information carrier with mounted ic element and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the loss of electromagnetic energy, to stabilize electric power received from a reader and a writer and to stabilize a communication between the reader and the writer, by a method wherein a conductor which constitutes an antenna container is formed in a multilayer structure which comprises a metal sputtered layer or a metal vapor-deposited layer and a metal plated layer. SOLUTION: A metal sputtered layer or a metal vapor-deposited layer 6 is formed uniformly on a surface protective film 2 which is formed on the circuit formation face of a completed wafer. Then, a metal plated layer 7 is laminated in the exposed part of the metal sputtered layer or the metal vapor- deposited layer 6. Then, the completed wafer in which the metal plated layer 7 comprising an electrode, an antenna coil and a lead is formed on the uniform metal sputtered layer or the uniform metal vapor-deposited layer 6 is obtained. As a result, the loss of electromagnetic energy can be reduced, electric power which is received from a reader and writer can be stabilized, a communication between the reader and the writer can be stabilized, and a communication distance between the reader and the writer can be expanded.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an IC element having a coil integrally formed on a chip, a method of manufacturing the IC element, an information carrier having the IC element mounted thereon, and a method of manufacturing the information carrier. .

[0002]

2. Description of the Related Art Conventionally, an IC element and an antenna coil electrically connected to a terminal portion of the IC element are provided in a base having a predetermined shape, so that power is received from a reader / writer and the distance between the reader / writer and the reader / writer is reduced. 2. Description of the Related Art A non-contact information carrier that transmits and receives signals in a non-contact manner using electromagnetic waves is known. As this type of information carrier, there are a card shape, a coin shape, a button shape and the like depending on the outer shape.

Heretofore, as this type of information carrier, a carrier in which an antenna coil is formed in a pattern on a base, or a carrier in which an antenna coil composed of a winding is carried on a base, has been used. It does not require protection treatment of the connection point between the IC and the IC element and does not require moisture proof measures, and can be manufactured at low cost. Also, even if stress such as bending or torsion is applied to the base, the coil does not break and has excellent durability. There has been proposed a device in which an IC element in which an antenna coil is integrally formed with the IC element itself is mounted on a base.

As a method of forming an antenna coil on an IC element, a sputtering method is used, and the conductor of the antenna coil integrally formed on the IC element is formed of a sputtered aluminum film.

[0005]

By the way, when the antenna coil is formed integrally with the IC element, the winding of the coil is smaller than when the antenna coil is patterned on the base or the antenna coil composed of the winding is carried on the base. Since the diameter and conductor width are small and the number of turns is naturally limited,
In some cases, it is difficult to increase the communication distance with the reader / writer, and the necessary communication distance cannot be secured.

The present invention has been made in order to solve the above-mentioned deficiencies of the prior art, and is an information carrier including an IC element in which an antenna coil is integrally formed.
It is an object of the present invention to provide an information carrier having a longer communication distance and a method of manufacturing the same, and to provide a configuration of an IC element integrally formed with an antenna coil suitable for this type of information carrier and a method of manufacturing the same. It is an issue.

[0007]

Means for Solving the Problems <IC element> The present invention provides:
In order to achieve the above object, in the case of an IC element in which an antenna coil is integrally formed, a conductor constituting the antenna coil has a multilayer structure having a metal sputtered layer or a metal vapor deposition layer and a metal plating layer. did.

[0008] Since the metal plating layer has a smaller electric resistance value than the metal sputter layer or the metal deposition layer, if the coil conductor has a multilayer structure having a metal sputter layer or a metal deposition layer and a metal plating layer, the metal simply has a metal structure. Electromagnetic energy loss can be reduced as compared with the case where only a sputtered layer or only a metal deposition layer is used, and a communication distance with a reader / writer can be increased.

<Method of Manufacturing IC Element> In order to achieve the above object, the present invention relates to a method of manufacturing an IC element.
First, a step of uniformly forming a metal sputtered layer or a metal deposited layer on a surface protective film of a completed wafer manufactured through a predetermined process, and forming a uniform photoresist layer on the metal sputtered layer or the metal deposited layer. And exposing and developing a required pattern including an antenna coil on the photoresist layer to expose the metal sputtered layer or metal deposited layer in the predetermined pattern; and Laminating a metal plating layer on the exposed portion of the metal deposition layer using electroless plating or electroplating or precision electroforming; removing the photoresist layer attached to the completed wafer; A predetermined conductive pattern corresponding to the predetermined pattern, selectively etching the metal sputtering layer or the metal deposition layer exposed from the layer; And forming the finished antenna coil by scribing the wafer is configured to include a step of obtaining the required IC elements which are integrally formed.

Second, a step of uniformly forming a photoresist layer on a surface protection film of a completed wafer manufactured through a predetermined process, and exposing a required pattern including an antenna coil to the photoresist layer. By developing, a step of exposing the surface protective film in the predetermined pattern, and mounting the completed wafer after the development processing on a sputtering device or a vacuum evaporation device, and a metal sputter layer or a metal sputtered layer on an exposed portion of the surface protective film. Forming a metal deposition layer, removing the photoresist layer attached to the completed wafer, and laminating a metal plating layer on the metal sputtering layer or the metal deposition layer using an electroless plating method or an electroplating method. And a step of scribing the completed wafer to obtain a required IC element integrally formed with an antenna coil.

As described above, when a required conductive pattern including an antenna coil is formed on a completed wafer, and then the completed wafer is scribed to obtain a desired IC element, the antenna coil is formed on each IC element. In comparison, an IC element in which a coil is integrally formed can be manufactured with high efficiency, and the manufacturing cost can be reduced. Further, it becomes possible to form an antenna coil having a uniform thickness with high precision for all the IC elements formed on the wafer, and it is possible to reduce the variation in communication characteristics. Furthermore, when an antenna coil is formed on each IC element by using a sputtering method, a vacuum evaporation method, and a plating method, an unnecessary conductor adheres to an outer peripheral portion of the IC element, which causes a problem of insulation of the IC element. When a required conductive pattern including a coil is formed on the wafer, even if an unnecessary conductor adheres to the outer peripheral portion of the completed wafer at the time of sputtering or the like, the portion is originally a portion that should be disposed of as an unnecessary portion. In addition, the insulating properties of the individual IC elements do not matter.

<Information Carrier> In order to achieve the above object, the present invention provides an information carrier comprising an IC element integrally formed with an antenna coil mounted on a base. Is arranged at the center in the plane direction.

As described above, when the IC element is disposed at the center of the base in the plane direction, the center of the coil formed integrally with the IC element and the center of the antenna coil provided in the reader / writer can be easily matched. , The power supply from the reader / writer to the information carrier and the transmission and reception of signals between the reader / writer and the information carrier can be reliably performed. In particular, when the shape of the base constituting the information carrier is a shape having no or little directionality with respect to the reader / writer, such as a circle, a square, or a regular polygon, it is formed integrally with the IC element. The center of the antenna coil provided in the reader / writer can be more easily matched with the center of the coil, so that the information carrier can be more easily used.

<Method of Manufacturing Information Carrier> In order to achieve the above object, the present invention relates to a method of manufacturing an information carrier,
First, a step of joining a first band-shaped material having a large number of through holes into which IC elements can be inserted regularly and a second band-shaped material having no through holes, and an IC element in which a coil is integrally formed. And fixing the first strip-shaped material and a third strip-shaped material having no through-hole.
A step of integrally punching out the joined first to third band-shaped materials to obtain a required information carrier having the IC element.

Second, the first belt-shaped material of the first band-shaped material in which a large number of through holes into which IC elements can be inserted are regularly opened, and a ring-shaped recess is formed concentrically around each of the through holes. A step of housing and fixing a coil formed separately from the IC element in the recess, a step of joining a second band-shaped material having no through hole on one surface of the first band-shaped material, Accommodating an IC element integrally formed in the through hole, fixing the first band material and a third band material having no through hole, A step of integrally punching the third strip-shaped material to obtain a required information carrier having the IC element and a coil formed separately from the IC element.

As described above, when a device in which a required IC element (or an IC element and a coil) is mounted on a band-shaped material is manufactured, and then a required information carrier is punched and formed from this band-shaped material, the same Since the information carrier can be manufactured with high efficiency, the manufacturing cost of the required information carrier can be reduced.

In the first and second manufacturing methods, the base of the information carrier is formed of three members (first to third band-shaped materials). However, the information carrier is accommodated in the first band-shaped material. In place of the configuration in which the through holes are opened, the first belt-shaped material
By forming a recess for accommodating the C element, the base of the information carrier can be formed of two members.

Further, in the first and second manufacturing methods, the IC element (or the IC element and the coil) is completely embedded in the strip material, but the IC element (or the IC element and the coil) is formed in the through hole or the strip material opened in the strip material. After the IC element (or the IC element and the coil) is housed in the formed recess, the IC element (or the IC element and the coil) is exposed on one side of the belt-shaped material by sealing the through hole or the recess with resin. Can also.

Further, when the IC element (or the IC element and the coil) is exposed on one side of the strip-shaped material, a concave portion for accommodating the IC element (or the IC element and the coil) is formed in the strip-shaped material. The base of the information carrier may be formed of one member.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS <IC element> An embodiment of an IC element according to the present invention will be described below with reference to FIGS. 1A, 1B, and 1C are plan views of an IC element according to the embodiment, and FIGS. 2A and 2B are cross-sectional views of main parts of the IC element according to the embodiment.

As shown in FIGS. 1 and 2, the IC element according to this embodiment has an insulating surface protection such as a silicon oxide film or a resin film on the side where the input / output terminals 1a of the IC element 1 are formed. A rectangular spiral antenna coil 3 through the membrane 2
Are integrally formed.

The IC element 1 shown in FIG.
The antenna coil 3 is formed only on the outer peripheral portion except for the antenna coil 3, and it is possible to prevent the occurrence of stray capacitance between the antenna coil 3 and a circuit formed in the IC element 1, and to reduce the power from the reader / writer. The receiving efficiency and the efficiency of transmitting and receiving signals to and from the reader / writer can be improved.

The IC element 1 shown in FIG.
Since the antenna coil 3 is formed up to the portion opposed to the above, since the number of turns of the coil can be increased, the efficiency of receiving power from the reader / writer and the efficiency of transmitting and receiving signals to and from the reader / writer can be improved. FIG.
In the example of (b), the antenna coil 3 is formed on the portion facing the circuit forming portion 4 and on the outer periphery thereof, but may be formed only on the portion facing the circuit forming portion 4.

The IC element 1 shown in FIG. 1C is obtained by obliquely chamfering a corner of an antenna coil 3 formed in a rectangular spiral shape. Can be reduced, and the efficiency of receiving power from the reader / writer and the efficiency of transmitting and receiving signals to and from the reader / writer can be increased. The same effect can be obtained even if the shape of the chamfer is circular. In addition, it is preferable that the chamfering is performed on both the inner circumference side and the outer circumference side of each line, but the effect is also obtained when the chamfering is performed only on the outer circumference side.

In any case, in order to receive a sufficient power supply for practical use and secure communication characteristics with the reader / writer, the line width of the antenna coil 3 must be 7 μm or more, Is preferably 5 μm or less and the number of turns is 20 or more.

The connection between the input / output terminal 1a of the IC element 1 and the antenna coil 3 is made through a through hole 5 formed in the surface protection film 2. In this case, even if the formation position of the antenna coil 3 is slightly shifted, the connection between the input / output terminal 1a and the antenna coil 3 is ensured, as shown in FIG.
As shown in (b), it is more preferable that the diameter or the width of the through hole 5 is smaller than the line width of the antenna coil 3.

The conductor forming the antenna coil 3 is shown in FIG.
As shown in (a) and (b), it has a multilayer structure including a metal sputtering layer or a metal deposition layer 6 and a metal plating layer 7. FIG. 2A shows an example in which the metal plating layer 7 is formed only on the upper surface of the metal sputtering layer or the metal deposition layer 6.
(B) shows an example in which the metal plating layer 7 is formed on the entire peripheral surface of the metal sputtering layer or the metal deposition layer 6. The metal sputter layer or metal deposition layer 6 and the metal plating layer 7 can be formed of any conductive metal, but are relatively inexpensive and have high conductivity. It is preferably formed of a metal selected from aluminum, nickel, copper and chromium, or an alloy of two or more metals selected from the group consisting of these metals. In addition to a uniform single-layer structure, different metal layers or alloy layers May be formed in a multi-layer structure of other layers. On the other hand, the metal plating 7 is preferably formed of copper, and can be formed by electroless plating, electroplating, or precision electroforming.

<Method of Manufacturing IC Element> Next, an embodiment of a method of manufacturing an IC element according to the present invention will be described with reference to FIGS. FIG. 3 is a plan view of a so-called completed wafer completed through a predetermined process, FIG. 4 is a process diagram showing a first example of an IC element manufacturing method according to the present invention, and FIG. 5 is an IC element manufacturing method according to the present invention. FIG. 6 is a process diagram showing a second example of FIG.
FIG. 3 is a plan view of a completed wafer on which required conductive patterns including an antenna coil are formed.

As shown in FIG. 3, the completed wafer 11 has
Circuit 1 for a large number of IC elements in the inner peripheral part except the outermost peripheral part
2 are formed at equal intervals, and on the circuit forming surface side,
The required surface protective film 2 is formed (see FIGS. 4 and 5).

In the method of manufacturing an IC device according to the first embodiment shown in FIG. 4, first, as shown in FIG. 4A, aluminum is formed on the surface protection film 2 formed on the circuit forming surface of the completed wafer 11. Alternatively, using an aluminum alloy, copper, or a copper alloy, the metal sputtering layer or the metal deposition layer 6 is formed uniformly. Next, as shown in FIG. 4B, a photoresist layer 12 is uniformly formed on the metal sputtering layer or the metal deposition layer 6, and a required pattern including a coil is formed on the formed photoresist layer 12. The photoresist layer 12 is exposed by irradiating the mask 13 with light 14 having a predetermined wavelength from outside the mask 13. After that, the exposed photoresist layer 12 is subjected to a developing process, and FIG.
As shown in FIG. 5, the exposed portion of the photoresist layer 12 is removed to expose a portion of the metal sputtered layer or the metal deposited layer 6 corresponding to the exposed pattern. As shown in FIG. 6, the exposed pattern of the metal sputtering layer or the metal deposition layer 6 includes a ring-shaped electrode portion 15, an antenna coil 3 formed in a portion facing each of the circuit forming portions 4, Lead part 1 for connecting part 15 and each antenna coil 3
6 are included. Next, using the electrode portion 15 as one electrode, electroplating or precision electroforming is performed on an exposed portion of the metal sputter layer or the metal deposition layer 6, and as shown in FIG. The metal plating layer 7 is laminated on the exposed portion of the metal layer 6. Next, the photoresist layer 12 adhered to the surface of the completed wafer 11 is removed by an ashing process or the like, and as shown in FIG. A completed wafer 11 on which the metal plating layer 7 having the leads 3 and the lead portions 16 is formed is obtained. Next, the metal plating layer 7
The exposed metal sputter layer or metal deposition layer 6 is selectively etched to remove the metal sputter layer or metal evaporation layer 6 exposed from the metal plating layer 7 as shown in FIG. As a result, a completed wafer 11 in which the metal sputtering layer or the metal deposition layer 6 and the metal plating layer 7 are both formed into the required conductive patterns shown in FIG. 6 is obtained. Finally,
By scribing the completed wafer 11, the required IC element 1 shown in FIG. 1 is obtained.

In the above-described embodiment, the electroplating method or the precision electroforming method is used as a means for forming the metal plating layer 7, but instead of such a structure, the metal plating layer 7 is formed using an electroless plating method. 7 can also be formed. In this case, an electrode is not required for forming the metal plating layer 7, and therefore, when the photoresist layer 12 is exposed,
The formation of the lead 5 and the formation of the lead portion 16 become unnecessary.

Electroless plating is also called chemical plating,
The base metal is immersed in a metal salt solution of the plating metal to deposit metal ions on the surface of the base metal, and the feature is that a relatively simple facility can be used to obtain a plating layer having a strong adhesion and a uniform and sufficient thickness. . The metal salt serves as a supply source of metal ions to be plated. When plating copper, a solution such as copper sulfate, cupric chloride, or copper nitrate is used as a plating solution. Metal ions such as copper are deposited only on the base metal sputtered layer or metal deposited layer 6 and not on the insulating surface protection layer 2. The base material needs to have a low ionization tendency with respect to the plating metal ions and have a catalytic action on the deposition of the plating metal ions. For this reason, when plating copper on the metal sputtered layer or the metal deposited layer 6 made of aluminum, nickel is formed on the surface of the aluminum layer to a thickness of several μm or less,
It is preferable to perform a pretreatment of immersing in a zinc nitrate solution for several seconds to replace with zinc.

On the other hand, in the electroplating method and the precision electroforming method, the completed wafer 11 on which the metal sputtered layer or the metal deposited layer 6 is formed and the electrode made of the plated metal are immersed in a plating bath containing ions of the plated metal. A voltage is applied using the metal sputtered layer or the metal deposited layer 6 formed on the completed wafer 11 as a cathode and the electrode immersed in the plating bath as an anode to apply metal ions in the plating bath to the metal sputtered layer or the metal deposited layer 6. It is a method of precipitating on the surface of the. Electroplating and precision electroforming also use copper sulfate, cupric chloride,
A solution such as copper nitrate is used as a plating solution.

The method of manufacturing an IC element according to the present embodiment uses the completed wafer 1
1, a required conductive pattern including a coil is formed, and then the completed wafer 11 is scribed to obtain a required IC element 1. Therefore, the coil is formed as compared with the case where the coil is formed in each individual IC element. Integrated I
The C element can be manufactured with high efficiency, and the manufacturing cost can be reduced. Further, since a coil having a uniform thickness can be formed with high precision for all the IC elements formed on the wafer, it is possible to reduce variation in communication characteristics. Furthermore, if a coil is formed by sputtering or vacuum evaporation and plating for each IC element, unnecessary conductors adhere to the outer periphery of the IC element, causing a problem of insulation of the IC element. In the case where a required conductive pattern including a coil is formed on 11, even if an unnecessary conductor adheres to the outer peripheral portion of the completed wafer 11 at the time of sputtering or the like, this portion is a portion that should be originally disposed as an unnecessary portion. Therefore, there is no adverse effect on the insulating properties of the individual IC elements. In addition, the method of manufacturing an IC element of this example
The metal plating layer 7 is formed in a state where the photoresist layer 12 is present, and thereafter, the metal sputtering layer or the metal deposition layer 6 is formed.
Since the portion where the metal plating layer 7 is not laminated is removed by etching, the metal plating layer 7 is laminated only on the upper surface of the metal sputtering layer or the metal vapor deposition layer 6 as shown in FIG. Since the antenna coil 3 does not spread in the width direction, a precise antenna coil 3 can be formed, and the antenna coil 3 having a large number of turns can be formed in a small area.

On the other hand, according to the second embodiment shown in FIG.
In the method for manufacturing the C element, as shown in FIG. 5A, a photoresist layer 12 is uniformly formed on a surface protection film 2 formed on a completed wafer 11, and the formed photoresist layer 1 is formed.
A mask 1 in which a required pattern including a coil is formed in 2
3 and the photoresist layer 12 is exposed by irradiating light 14 having a predetermined wavelength from outside the mask 13. Thereafter, the exposed photoresist layer 12 is subjected to a development process, and FIG.
As shown in (b), the exposed portions of the photoresist layer 12 are removed to expose portions of the surface protection film 2 corresponding to the exposure patterns. As shown in FIG. 6, the exposure pattern of the photoresist layer 12 can have a shape including the electrode portion 15, the antenna coil 3, and the lead portion 16.
Next, the completed wafer 11 after the development processing is mounted on a sputtering apparatus or a vacuum evaporation apparatus, and a metal sputtering layer or a metal evaporation layer 6 is formed on the exposed portion of the surface protective film 2 as shown in FIG. . Next, as shown in FIG.
After the photoresist layer 12 adhered to the completed wafer 11 is removed by an ashing process or the like, the metal part is used as one electrode to perform electroplating on the metal sputtered layer or the metal deposited layer 6, as shown in FIG. Then, a metal plating layer 7 is laminated on an exposed portion of the metal sputtering layer or the metal deposition layer 6. Finally, the completed wafer 11 is scribed to obtain a required IC element 1 shown in FIG.

In the above-described embodiment, the electroplating method is used as the means for forming the metal plating layer 7. However, the metal plating layer 7 may be formed using an electroless plating method instead of such a configuration. Can also. In this case, since no electrode is required for forming the metal plating layer 7, the formation of the electrode portion 15 and the formation of the lead portion 16 are unnecessary when exposing the photoresist layer 12.

The method of manufacturing an IC element according to the present embodiment has the same effects as the method of manufacturing an IC element according to the first embodiment, and can reduce the number of steps for forming a conductive pattern on the completed wafer 11. An IC element in which an antenna coil is integrally formed can be manufactured with higher efficiency.

<Information Carrier> An embodiment of an information carrier according to the present invention will be described below with reference to FIGS.
FIG. 7 is a partially cut-away plan view of the information carrier according to the first embodiment, FIG. 8 is an exploded perspective view of the information carrier according to the first embodiment, and FIG. 9 is a perspective view of the information carrier according to the first embodiment. Sectional view, FIG. 10 is an explanatory view of the use state of the information carrier according to the first embodiment, FIG. 11 is a sectional view of the information carrier according to the second embodiment,
FIG. 12 is a sectional view of an information carrier according to the third embodiment, and FIG.
3 is a sectional view of the information carrier according to the fourth embodiment, FIG. 14 is a sectional view of the information carrier according to the fifth embodiment, and FIG.
FIG. 16 is a cross-sectional view of an information carrier according to a seventh embodiment, and FIG. 17 is a cross-sectional view of an information carrier according to an eighth embodiment.

The information carrier 20a according to the first embodiment is
As shown in FIG. 7 to FIG. 9, a coin-shaped base 21 having a circular planar shape is formed, and the IC element 1 is set at the center of the base 21 in the plane direction and the thickness direction.
As shown in FIGS. 1 and 2, the IC element 1 has an antenna coil integrally formed.

As shown in FIG. 8 and FIG.
It is composed of an upper member 22, an intermediate member 23, and a lower member 24, which are integrally joined via an adhesive layer 25, respectively. Each member 22, 23, 24 constituting the base 21
Can be formed of paper or plastic sheet, but it is naturally decomposed after disposal and generates a small amount of covered gas even when incinerated, and it is inexpensive. Particularly preferred. Also, it is of course possible to form one or two of the members 22, 23, 24 from a paper material and form the other one or two from a plastic sheet.

At the center of the intermediate member 23, a through-hole 27 through which the IC element 1 can be inserted is opened, and an IC is formed in a space formed by joining the members 22, 23 and 24. The element 1 is housed. The IC element 1 is
It is preferable to adhere to the lower member 24 in order to prevent shaking during handling. In this case, an adhesive layer 25 is uniformly formed on one surface of the lower member 24, and the intermediate member 23 and the lower member 24 are bonded using the adhesive layer 25, and the lower member 24 and the IC element 1 are connected to each other. Is advantageous in terms of cost. Further, the planar shape of the through hole 27 can be any shape. However, when the IC element 1 is housed in a concave portion formed by joining the intermediate member 23 and the lower member 24, the concave portion and the IC element Since it is not necessary to strictly adjust the directions of the rotation directions, it is more advantageous in manufacturing to form a circular through hole 27 as shown in FIGS.

In the information carrier 20a of this embodiment, since the IC element 1 is arranged at the center of the base 21 formed in a circular shape in the plane direction, as shown in FIG.
The information carrier 20 is inserted into the slot 101 of the reader / writer 100 having the antenna coil 102 for non-contact communication provided at the center of the arc portion in the slot 101.
Can be automatically centered between the antenna coil 3 integrally formed on the IC element 1 and the antenna coil 102 provided on the reader / writer 100, and the electromagnetic coupling coefficient between the coils 3 and 102 can be automatically adjusted. Therefore, power supply from the reader / writer 100 to the information carrier 20 and transmission / reception of signals between the reader / writer 100 and the information carrier 20 can be reliably performed. In addition, since the planar shape of the information carrier 20a is circular, there is no directionality with respect to the substantially semicircular slot 101,
Excellent ease of use. Further, the IC element 1 is
Since the IC element 1 is completely housed inside, the protection effect of the IC element 1 is high and the durability is excellent, and since the IC element 1 is not seen from the part, the appearance is also excellent.

The information carrier 20b according to the second embodiment is
As shown in FIG. 11, the base 21 is configured by three members, an upper member 22, an intermediate member 23, and a lower member 24.
A booster coil 28 for enhancing electromagnetic coupling between the antenna coil 3 and a coil provided in a reader / writer is arranged concentrically around the IC element 1. Reference numeral 29 in the drawing denotes a recess for accommodating the booster coil 28, and this recess 29 is
Is formed in a ring shape around the through hole 27. The rest of the configuration is the same as that of the information carrier 20a according to the first embodiment, and a description thereof will be omitted to avoid duplication.
The information carrier 20b of this example has the same effect as the information carrier 20a according to the first embodiment, and furthermore, since the booster coil 28 is arranged concentrically around the IC element 1, the
The electromagnetic coupling between the antenna coil 3 formed integrally with the element 1 and the antenna coil 102 provided in the reader / writer 100 can be made higher through the booster coil 28, and the power supply can be further stabilized. In addition, stabilization of signal transmission / reception or an increase in communication distance can be achieved.

The information carrier 20c according to the third embodiment is
As shown in FIG. 12, the base 21 is composed of two members, an upper member 22 and a lower member 24, and the IC element 1 is attached to the lower member 24.
A recess 30 for accommodating the same. The rest of the configuration is the same as that of the information carrier 20a according to the first embodiment, and a description thereof will be omitted to avoid duplication. The information carrier 20c of the present example has the same effects as the information carrier 20a according to the first embodiment, and also has a small number of parts, so that the cost of the information carrier can be further reduced.

The information carrier 20d according to the fourth embodiment is
As shown in FIG. 13, the base 21 is composed of two members, an upper member 22 and a lower member 24, and the IC element 1 is attached to the lower member 24.
And a second concave portion 29 for storing the booster coil 28 is formed. The other configuration is the same as that of the information carrier 20c according to the third embodiment, and the description is omitted to avoid duplication. The information carrier 20c of the present example has the same effects as the information carrier 20b according to the second embodiment, and also has a smaller number of parts, so that the cost of the information carrier can be further reduced.

The information carrier 20e according to the fifth embodiment comprises:
As shown in FIG. 14, an upper member 22 having a through hole 27 for accommodating an IC element and a lower member 24 having no through hole 27 are provided.
The IC element 1 is accommodated in a concave portion formed by joining the upper member 22 and the lower member 24 to each other.
1 is sealed. The rest of the configuration is the same as that of the information carrier 20a according to the first embodiment, and a description thereof will be omitted to avoid duplication. The information carrier 20e of this example has the same effect as the information carrier 20a according to the first embodiment, except that the IC element 1 is not covered with the base.

The information carrier 20f according to the sixth embodiment comprises:
As shown in FIG. 15, a through hole 27 for accommodating an IC element is opened, and a concave portion 29 for accommodating a booster coil is formed concentrically around the through hole 27; The base member 21 is composed of two members, the lower member 24 having no concave portion 29, the booster coil 28 is housed in the concave portion 29, the concave portion 29 is sealed with a potting resin 31, and the upper member 22 and the lower The IC element 1 is housed in a recess formed by joining the member 24, and the inside of the recess is sealed with a potting resin 31. The other configuration is the same as that of the information carrier 20e according to the fifth embodiment, and the description is omitted to avoid duplication. The information carrier 20f of the present example includes:
Except that the IC element 1 is not covered with the base, the same effect as that of the information carrier 20a according to the first embodiment is obtained.

The information carrier 20g according to the seventh embodiment is
As shown in FIG. 16, the base 21 is constituted by one member having a concave portion 30 for accommodating the IC element 1 on one side, and the IC element 1 is accommodated in the concave portion 30 and the concave portion 3 is formed.
0 is sealed with a potting resin 31. The other configuration is the same as that of the information carrier 20e according to the fifth embodiment, and the description is omitted to avoid duplication. The information carrier 20g of the present example has the same effects as the information carrier 20e according to the fifth embodiment, and also has a smaller number of parts, so that the cost of the information carrier can be further reduced.

The information carrier 20h according to the eighth embodiment is
As shown in FIG. 17, the base 21 is constituted by one member in which a first recess 30 for housing the IC element 1 and a second recess 29 for housing the booster coil 28 are formed on one surface. While accommodating the IC element 1 in the concave portion 30 and sealing the concave portion 30 with the potting resin 31,
The booster coil 28 is housed in the second recess 29 and the inside of the recess 29 is sealed with a potting resin 31. The other configuration is the same as that of the information carrier 20g according to the seventh embodiment, and the description is omitted to avoid duplication. The information carrier 20h of this example is the sixth type.
In addition to having the same effect as the information carrier 20f according to the embodiment, since the number of parts is small, the cost of the information carrier can be further reduced.

In each of the above embodiments, the planar shape of the base 21 is circular.
It can be formed in any shape such as a rectangle, a triangle or a polygon.

Further, in the information carrier according to the second, fourth, sixth and eighth embodiments, the booster coil 28 formed as an independent and separate body is installed in the recess or through hole. Instead of the configuration, the booster coil 28 can be directly formed on any member constituting the base 21 by means of, for example, printing, plating, or sputtering.

Further, the booster coil 28 comprises a first coil mainly electromagnetically coupled to the antenna coil and a second coil mainly electromagnetically coupled to a non-contact communication coil provided in the reader / writer. The diameter of the two coils may be larger than the diameter of the first coil, and the first and second coils may be connected in series.

<Method of Manufacturing Information Carrier> Next, an embodiment of an information carrier manufacturing method according to the present invention will be described with reference to FIGS.
It will be described based on. FIG. 18 is a partial perspective view showing a first example of a belt-shaped material used for manufacturing an information carrier according to the present invention,
19 is a partial perspective view showing a second example of the band-shaped material, FIG. 20 is a partial perspective view showing a third example of the band-shaped material, FIG. 21 is a partial perspective view showing a fourth example of the band-shaped material, and FIG. It is a partial perspective view which shows the 5th example of.

According to the method for manufacturing an information carrier of the present invention, required mounting parts including the IC element 1 are set on a material (band material) for forming one base formed in a belt shape, and then, if necessary, It is characterized in that another band-shaped material is bonded to one or both sides of the band-shaped material, or a mounted component is potted, and thereafter, a required information carrier is punched out of a single or bonded band-shaped material. The method for manufacturing an information carrier according to the present invention includes a strip-shaped material 41 in which through holes 27 for accommodating the IC element 1 are opened at regular intervals as shown in FIG. 18, and an IC element 1 as shown in FIG. Holes 27 for accommodating the through holes 2 are formed at regular intervals and each of the through holes 2
7, a ring-shaped recess 29 for accommodating the booster coil 28 is formed concentrically, and the ring-shaped recess 2 is formed.
9, a band-shaped material 42 on which an adhesive layer 32 is applied, and a recess 30 for accommodating the IC element 1 as shown in FIG.
Are formed at regular intervals, and a band-shaped material 43 in which the adhesive layer 32 is applied to the bottom surface of the concave portion 30, as shown in FIG.
First concave portions 30 for accommodating the C element 1 are formed at regular intervals, and a ring-shaped second concave portion 29 for accommodating the booster coil 28 is formed concentrically around each first concave portion 30. An adhesive layer 3 is provided on the bottom of each of the recesses 29 and 30.
22, a band-shaped material 45 having no adhesive holes or depressions on one side without a hole or a concave portion is selectively used as shown in FIG.

The first example of the method for manufacturing an information carrier according to the present invention is for manufacturing the information carrier 20a according to the first embodiment, and a single strip 41 shown in FIG.
And the two band-shaped materials 45 shown in FIG. Then, first, the band-shaped material 45 is joined to one surface of the band-shaped material 41 via the adhesive layer 25 to obtain a joined body of the band-shaped members 41 and 45 having a space in which the IC element 1 can be stored. Next, the IC element 1 is positioned and stored in the space, and the adhesive layer 2
5 and adhere to the belt-shaped material 45. Next, another belt-shaped material 45 is placed on the other surface of the belt-shaped material 41 with the adhesive layer 25.
To obtain a joined body of the band-shaped members 41 and 45 in which the IC element 1 is housed in the internal space. Finally, the joined body is cut into a predetermined shape to obtain the information carrier 20a according to the first embodiment. In the information carrier manufacturing method of this example, a large number of IC elements 1 are casingd on the strip-shaped materials 41 and 45, and then the required information carriers are punched out of the strip-shaped materials 41 and 45. And the cost of manufacturing the information carrier can be reduced.

The second example of the method for manufacturing an information carrier according to the present invention is for manufacturing the information carrier 20b according to the second embodiment, and a single strip-shaped material 42 shown in FIG.
And the two band-shaped materials 45 shown in FIG. Then, first, the ring-shaped concave portion 29 formed in the belt-shaped material 42 is formed.
The booster coil 28 is housed therein and adhered to the bottom surface of the concave portion 29 via the adhesive layer 32. Next, the strip material 4
The band-shaped member 45 having a space in which the IC element 1 can be accommodated by bonding a band-shaped material 45 to one surface of
2,45 conjugates are obtained. Next, the IC element 1 is positioned and stored in the space, and is adhered to the belt-shaped material 45 via the adhesive layer 25. Next, another band-shaped material 45 is bonded to the other surface side of the band-shaped material 41 via the adhesive layer 25, and the band-shaped member 4 in which the IC element 1 is stored in the internal space.
2,45 conjugates are obtained. Finally, the joined body is cut into a predetermined shape, and the information carrier 20b according to the second embodiment is cut.
Get. The information carrier manufacturing method of this example also has the same effect as the information carrier manufacturing method according to the first embodiment.

The third example of the method for manufacturing an information carrier according to the present invention is for manufacturing the information carrier 20c according to the third embodiment, and comprises a single band-like material 43 shown in FIG.
And one strip-shaped material 45 shown in FIG. Then, first, the IC element 1 is positioned and stored in the concave portion 30 formed in the band-shaped material 43, and is adhered to the bottom surface of the concave portion 30 via the adhesive layer 32. Next, the band-shaped material 45 is bonded to the side of the recess-formed surface of the band-shaped material 43 via the adhesive layer 25, and the band-shaped member 4 in which the IC element 1 is stored in the internal space.
3,45 conjugates are obtained. Finally, the joined body is cut into a predetermined shape, and the information carrier 20c according to the third embodiment is cut.
Get. The information carrier manufacturing method of this example also has the same effect as the information carrier manufacturing method according to the first embodiment.

The fourth example of the information carrier manufacturing method according to the present invention is for manufacturing the information carrier 20d according to the fourth embodiment, and includes a single band-like material 44 shown in FIG.
And one strip-shaped material 45 shown in FIG. Then, first, I is inserted into the first concave portion 30 formed in the belt-shaped material 44.
The C element 1 is positioned and stored, adhered to the bottom surface of the concave portion 30 via an adhesive layer 32, and
The booster coil 28 is housed in the ring-shaped second concave portion 29 formed in
Adhere to the bottom of Next, the band-shaped material 45 is bonded to the concave portion forming surface side of the band-shaped material 44 via the adhesive layer 25 to obtain a bonded body of the band-shaped members 44 and 45 in which the IC elements 1 are accommodated in the internal space. Finally, the joined body is cut into a predetermined shape to obtain the information carrier 20c according to the third embodiment. The information carrier manufacturing method of this example also has the same effect as the information carrier manufacturing method according to the first embodiment.

The fifth example of the method for manufacturing an information carrier according to the present invention is for manufacturing the information carrier 20e according to the fifth embodiment, and a single strip 41 shown in FIG.
And one strip-shaped material 45 shown in FIG. Then, first, the band-shaped material 45 is joined to one surface of the band-shaped material 41 via the adhesive layer 25 to obtain a joined body of the band-shaped members 41 and 45 having a space in which the IC element 1 can be stored. Next, the IC element 1 is positioned and stored in the space, and the adhesive layer 2
5 and adhere to the belt-shaped material 45. Then, the IC
The space in which the element 1 is stored is filled with the potting resin 31 to obtain a joined body of the belt-shaped members 41 and 45 on which the IC element 1 is set. Finally, the joined body is cut into a predetermined shape to obtain the information carrier 20e according to the fifth embodiment. The information carrier manufacturing method of this example also has the same effect as the information carrier manufacturing method according to the first embodiment.

The sixth example of the method for manufacturing an information carrier according to the present invention is for manufacturing the information carrier 20f according to the sixth embodiment, and comprises a single strip material 42 shown in FIG.
And one strip-shaped material 45 shown in FIG. Then, first, the ring-shaped concave portion 29 formed in the belt-shaped material 42 is formed.
The booster coil 28 is housed therein and adhered to the bottom surface of the concave portion 29 via the adhesive layer 32. Next, the strip material 4
2, a band-shaped material 45 is bonded to one surface of the band-shaped material via an adhesive layer 25, and the band-shaped member 4 having a space in which the IC element 1 can be stored.
2,45 conjugates are obtained. Next, the IC element 1 is positioned and stored in the space, and is adhered to the belt-shaped material 45 via the adhesive layer 25. Next, the booster coil 28
The potting resin 31 is filled in the recess 29 in which the IC element 1 is stored and the space in which the IC element 1 is stored, and the band-shaped members 42 and 45 in which the IC element 1 and the booster coil 28 are set.
To obtain a conjugate. Finally, the joined body is cut into a predetermined shape to obtain an information carrier 20f according to the sixth embodiment.
The information carrier manufacturing method of this example also has the same effect as the information carrier manufacturing method according to the first embodiment.

The seventh example of the method for manufacturing an information carrier according to the present invention is for manufacturing the information carrier 20g according to the seventh embodiment, and a single strip 43 shown in FIG.
Is used. Then, first, the IC element 1 is positioned and stored in the concave portion 30 formed in the band-shaped material 43, and the adhesive layer 3 is formed.
2 and adhere to the bottom surface of the concave portion 30. Next, the potting resin 31 is filled in the recess 30 in which the IC element 1 is stored, and the belt-shaped member 43 on which the IC element 1 is set.
Get. Finally, the band-shaped member 43 is cut into a predetermined shape to obtain the information carrier 20g according to the seventh embodiment. The information carrier manufacturing method of this example also has the same effect as the information carrier manufacturing method according to the first embodiment.

The eighth example of the method for manufacturing an information carrier according to the present invention is for manufacturing the information carrier 20h according to the eighth embodiment, and comprises a single band-like material 44 shown in FIG.
Is used. And, first, the first
The IC element 1 is positioned and accommodated in the concave portion 30 and adhered to the bottom surface of the concave portion 30 via the adhesive layer 32.
The ring-shaped second concave portion 29 formed in the band-shaped material 44
The booster coil 28 is housed therein and adhered to the bottom surface of the concave portion 29 via the adhesive layer 32. Next, a potting resin 31 is filled in the first concave portion 30 in which the IC element 1 is stored and in the second concave portion 29 in which the booster coil 28 is stored, and a band-shaped member in which the IC element 1 and the booster coil 28 are set. 43 is obtained. Finally, the joined body is cut into a predetermined shape, and the information carrier 2 according to the eighth embodiment is cut.
Obtain 0h. The information carrier manufacturing method of this example also has the same effect as the information carrier manufacturing method according to the first embodiment.

In the above-described second, fourth, sixth, and eighth embodiments, the booster coil 28 is formed separately from the base 21. It can also be formed by printing.

[0064]

As described above, in the IC element of the present invention, the conductor of the antenna coil formed integrally with the IC element has a multilayer structure having a metal sputtering layer or a metal deposition layer and a metal plating layer. This makes it possible to reduce the loss of electromagnetic energy as compared with the case where the conductor is simply composed of only the metal sputtered layer or only the metal deposited layer, stabilize the power received from the reader / writer, and improve the communication between the reader / writer. Stabilization and an increase in communication distance with a reader / writer can be achieved.

The method of manufacturing an IC element according to the present invention
Instead of forming an antenna coil on the element, a large number of antenna coils corresponding to individual IC elements are formed on the completed wafer at the same time.
The C element can be manufactured with high efficiency, the cost of this type of IC element can be reduced, and the thickness of the metal sputtered layer, metal deposited layer and metal plated layer, which are the base of the antenna coil, is made uniform. Since it can be formed with high precision, it is possible to obtain an IC element having a small variation in communication characteristics.

In the information carrier of the present invention, since the IC element having the coil formed integrally is disposed at the center of the base in the plane direction, the center of the coil formed integrally with the IC element and the center of the antenna coil provided in the reader / writer are provided. Can be easily matched, and the electromagnetic coupling coefficient between both coils can be increased, so that the power supply from the reader / writer to the information carrier and the transmission and reception of signals between the reader / writer and the information carrier are stabilized. it can.

According to the method of manufacturing an information carrier of the present invention, a belt-like material is prepared by mounting a required mounting component including an IC element, and then the required information carrier is punched out of the belt-like material. In addition, the same information carrier can be manufactured with high efficiency, and the manufacturing cost of an information carrier having an IC element can be reduced.

[Brief description of the drawings]

FIG. 1 is a plan view of an IC element according to an embodiment.

FIG. 2 is a cross-sectional view of a main part of the IC element according to the embodiment.

FIG. 3 is a plan view of a completed wafer.

FIG. 4 is a process chart showing a first example of an IC element manufacturing method according to the present invention.

FIG. 5 is a process chart showing a second example of the method for manufacturing an IC element according to the present invention.

FIG. 6 is a plan view of a completed wafer on which required conductive patterns including an antenna coil are formed.

FIG. 7 is a partially cut-away plan view of the information carrier according to the first embodiment.

FIG. 8 is an exploded perspective view of the information carrier according to the first embodiment.

FIG. 9 is a sectional view of the information carrier according to the first embodiment.

FIG. 10 is an explanatory diagram of a use state of the information carrier according to the first embodiment.

FIG. 11 is a sectional view of an information carrier according to a second embodiment.

FIG. 12 is a sectional view of an information carrier according to the third embodiment.

FIG. 13 is a sectional view of an information carrier according to a fourth embodiment.

FIG. 14 is a sectional view of an information carrier according to a fifth embodiment.

FIG. 15 is a sectional view of an information carrier according to a sixth embodiment.

FIG. 16 is a sectional view of an information carrier according to a seventh embodiment.

FIG. 17 is a sectional view of an information carrier according to an eighth embodiment.

FIG. 18 is a partial perspective view showing a first example of a belt-shaped material.

FIG. 19 is a partial perspective view showing a second example of the belt-shaped material.

FIG. 20 is a partial perspective view showing a third example of the belt-shaped material.

FIG. 21 is a partial perspective view showing a fourth example of the belt-shaped material.

FIG. 22 is a partial perspective view showing a fifth example of the belt-shaped material.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 IC element 2 Surface protective film 3 Antenna coil 4 Circuit formation part 5 Through-hole 6 Metal sputter layer or metal evaporation layer 7 Metal plating layer 11 Complete wafer 12 Photoresist layer 13 Mask 14 Light of predetermined wavelength 15 Electrode part 16 Lead part 20a ~ 20h Information carrier 21 Base 22 Upper member 23 Intermediate member 24 Lower member 25 Adhesive layer 27 Through hole 28 Booster coil 29 Depression 41-45 Strip material

Claims (27)

[Claims] 1. An IC element in which an antenna coil is integrally formed, wherein the conductor forming the antenna coil has a multilayer structure having a metal sputtering layer or a metal deposition layer and a metal plating layer. . 2. The IC element according to claim 1, wherein the metal sputtered layer or the metal deposited layer is made of a metal selected from aluminum, nickel, copper and chromium, or two or more metals selected from the group consisting of these metals. An IC element formed of an alloy of the above, wherein the metal plating is formed of copper on the metal sputtered layer or the metal deposited layer. 3. The IC element according to claim 1, wherein the antenna coil is formed on an input / output terminal formation surface side of the IC element via an insulating surface protection film, and the input / output terminal of the IC element is connected to the antenna coil. An IC element, wherein said antenna coil is electrically connected to said antenna coil through a through hole having a diameter smaller than a line width of said antenna coil formed in said surface protection film. 4. The IC element according to claim 1, wherein a planar shape of the antenna coil is a rectangular spiral shape, and all or a part of a corner is chamfered. 5. The IC device according to claim 1, wherein said metal plating layer is formed by electroless plating, electroplating or precision electroforming.
element. 6. The IC element according to claim 1, wherein the antenna coil has a line width of 7 μm or more and a line distance of 5 μm.
m, and the number of turns is 20 turns or more. 7. A step of uniformly forming a metal sputtered layer or a metal deposited layer on a surface protective film of a completed wafer manufactured through a predetermined process, and forming a photoresist layer on the metal sputtered layer or the metal deposited layer. Forming a uniform pattern, exposing and developing a predetermined pattern including an antenna coil on the photoresist layer to expose the metal sputter layer or the metal deposition layer in the predetermined pattern; and Laminating a metal plating layer on the exposed portion of the metal deposition layer using electroless plating or electroplating or precision electroforming; removing the photoresist layer attached to the completed wafer; Selectively etching the metal sputtered layer or the metal deposited layer exposed from the layer, and forming a predetermined conductive pattern corresponding to the predetermined pattern. Forming an integrated circuit and obtaining a required IC element integrally formed with an antenna coil by scribing the completed wafer.
Device manufacturing method. 8. A step of uniformly forming a photoresist layer on a surface protective film of a completed wafer manufactured through a predetermined process, and exposing and developing a required pattern including an antenna coil in the photoresist layer. A step of exposing the surface protective film in the predetermined pattern, and mounting the completed wafer after the development process on a sputtering device or a vacuum vapor deposition device to form a metal sputter layer or a metal vapor deposited layer on the exposed portion of the surface protective film. Performing a step of removing a photoresist layer attached to the completed wafer; a step of laminating a metal plating layer on the metal sputtering layer or the metal deposition layer using an electroless plating method or an electroplating method; Scribing a wafer to obtain a required IC element integrally formed with an antenna coil.
Method for manufacturing C element. 9. An information carrier in which an IC element integrally formed with an antenna coil is mounted on a base, wherein the IC element is arranged at the center of the base in the planar direction. 10. The information carrier according to claim 9, wherein
An information carrier, wherein both sides of the IC element are covered with the base. 11. The information carrier according to claim 9, wherein
An information carrier, wherein only one side of the IC element is covered with the base. 12. The information carrier according to claim 9, wherein
An information carrier, wherein the planar shape of the base is circular or square. 13. The information carrier according to claim 9, wherein
An information carrier, wherein all or a part of the base is formed of paper. 14. The information carrier according to claim 9, wherein
An information carrier, characterized in that the base has a three-layer bonding structure consisting of an upper member, a lower member, and an intermediate member, and the IC element is housed in a through hole formed in the center of the intermediate member. 15. The information carrier according to claim 14, wherein the through hole has a circular planar shape. 16. The information carrier according to claim 9, wherein
An information carrier, characterized in that the substrate has a two-layer bonding structure composed of an upper member and a lower member, and the IC element is housed in a concave portion formed in the center of the upper member or the lower member. 17. The information carrier according to claim 9, wherein
An information carrier, wherein the base has a single-layer structure, and the IC element is accommodated in a concave portion formed in a central portion of the base. 18. The information carrier according to claim 16, wherein the recess has a circular planar shape. 19. The information carrier according to claim 9, wherein
An information carrier, comprising another coil formed separately from the IC element in the base. 20. A step of joining a first strip-shaped material having a large number of through-holes into which IC elements can be inserted regularly and a second strip-shaped material having no through-holes, and an antenna coil integrally formed. A step of accommodating and fixing the IC element in the through-hole, a step of joining the first strip-shaped material and a third strip-shaped material having no through-hole, and the joined first to third strip-shaped materials. And obtaining a required information carrier having said IC element by integrally punching said IC element. 21. A plurality of through-holes into which IC elements can be inserted are regularly opened, and a ring-shaped recess is formed concentrically around each of the through-holes. A step of housing and fixing a coil formed separately from the IC element, a step of joining a second band-shaped material having no through-hole on one surface of the first band-shaped material, A step of accommodating and fixing the integrated IC element in the through hole, a step of joining the first strip material and a third strip material having no through hole, and 3. A method of manufacturing an information carrier, the method comprising: obtaining a required information carrier having the IC element and a coil formed separately from the IC element by integrally punching the strip-shaped material. 22. A step of accommodating and fixing an IC element having an antenna coil integrally formed therein in the first strip-shaped material in which a plurality of recesses into which IC elements can be inserted are regularly formed; A step of joining a second belt-shaped material having no through-hole on the side of the recess-formed surface of the first belt-shaped material;
And a step of integrally punching the second strip material to obtain a required information carrier having the IC element. 23. A first strip-shaped material in which a number of first recesses into which IC elements can be inserted are formed regularly, and a ring-shaped second recess is formed concentrically around each of the first recesses. Wherein the antenna coil is integrally formed in the first recessed portion.
Accommodating and fixing the C element, accommodating and fixing a coil formed separately from the IC element in a second recess of the first belt-shaped material, Joining a second strip material having no through-hole on the side of the concave portion, and punching the joined first and second strip materials together to separate the IC element and the IC element from each other. Obtaining a required information carrier having a coil formed in the body. 24. A step of joining a first band-shaped material having a large number of through holes into which IC elements can be inserted regularly and a second band-shaped material having no through holes, and an antenna coil integrally formed. A step of accommodating and fixing the IC element in the through-hole, a step of resin-sealing the through-hole in which the IC element is accommodated, and punching out the joined first and second strip-shaped materials integrally Obtaining a required information carrier having the IC element by the method. 25. A plurality of through holes into which IC elements can be inserted are regularly opened, and a ring-shaped recess is formed concentrically around each of the through holes. A step of housing and fixing a coil formed separately from the IC element, a step of joining the first strip material and a second strip material having no through-hole, A step of accommodating the formed IC element in the through-hole and fixing the same;
A step of resin-sealing the through-hole in which the element is housed, and a coil formed separately from the IC element and the IC element by punching out the joined first and second band-shaped materials integrally. Obtaining a required information carrier having the following formula: 26. A step of accommodating and fixing an IC element having an antenna coil integrally formed in said concave part of a band-shaped material in which a large number of concave parts into which IC elements can be inserted are formed regularly; A method for manufacturing an information carrier, comprising: a step of resin-sealing the accommodated concave portion; and a step of punching the strip-shaped material to obtain a required information carrier having the IC element. 27. A strip-shaped material in which a large number of first recesses into which IC elements can be inserted are formed regularly, and a ring-shaped second recess is formed concentrically around each of the first recesses. A step of housing and fixing an IC element having an antenna coil integrally formed in a first recess, and a step of housing a coil formed separately from the IC element in a second recess of the band-shaped member. Fixing the resin, sealing the first and second recesses with a resin, and punching the band-shaped material to form the IC.
Obtaining a required information carrier having a coil formed separately from the element and the IC element.