JP2002343877A - Method of manufacturing ic element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing at high efficiency a high- performance IC element on which a coil is integrally formed. SOLUTION: Required conductive patterns 15, 16 containing antenna coils 3 are formed on a surface protective film 2 of a finished wafer 11 manufactured via prescribed processes. Then, the finished wafer 11, on which the required conductive patterns 15, 16 are formed, is scribed to obtain IC elements 1 on each of which an antenna coil 3 is integrally formed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an IC element in which a coil is integrally formed on a chip.

[0002]

2. Description of the Related Art Conventionally, an IC element and an antenna coil electrically connected to a terminal portion of the IC element are provided in a base having a predetermined shape, so that power is received from a reader / writer and the distance between the reader / writer and the reader / writer is reduced. 2. Description of the Related Art A non-contact information carrier that transmits and receives signals in a non-contact manner using electromagnetic waves is known. As this type of information carrier, there are a card shape, a coin shape, a button shape and the like depending on the outer shape.

Heretofore, as this type of information carrier, a carrier in which an antenna coil is formed in a pattern on a base, or a carrier in which an antenna coil composed of a winding is carried on a base, has been used. It does not require protection treatment of the connection point between the IC and the IC element and does not require moisture proof measures, and can be manufactured at low cost. Also, even if stress such as bending or torsion is applied to the base, the coil does not break and has excellent durability. There has been proposed a device in which an IC element in which an antenna coil is integrally formed with the IC element itself is mounted on a base.

As a method of forming an antenna coil on an IC element, a sputtering method is used, and the conductor of the antenna coil integrally formed on the IC element is formed of a sputtered aluminum film.

[0005]

By the way, when the antenna coil is formed integrally with the IC element, the antenna coil is formed in a pattern over the entire substrate or the coil of the coil is carried on the substrate. Since the winding diameter and the conductor width are reduced and the number of windings is naturally limited, it is difficult to increase the communication distance with the reader / writer, and the necessary communication distance may not be secured.

SUMMARY OF THE INVENTION The present invention has been made in order to solve the deficiencies of the prior art, and an object of the present invention is to provide a method for efficiently manufacturing a high-performance IC element in which an antenna coil is integrally formed. It is in.

[0007]

According to the present invention, in order to achieve the above object, a required conductive pattern including an antenna coil is formed on a surface protection film of a completed wafer manufactured through a predetermined process. The completed wafer on which the required conductive pattern is formed is scribed to obtain an IC element integrally formed with an antenna coil.

[0008] As described above, when a required conductive pattern including an antenna coil is formed on the surface protection film of a completed wafer, an IC element in which a coil is integrally formed is formed as compared with a case where an antenna coil is formed in each IC element. It can be manufactured with high efficiency, and its manufacturing cost can be reduced. Also,
Since it becomes possible to form an antenna coil having a uniform thickness with high accuracy for all the IC elements formed on the wafer, it is possible to reduce variations in communication characteristics.
Further, the conductive pattern including the antenna coil and the conductive film that forms the conductive pattern are formed by a sputtering method, a vacuum evaporation method, a plating method, or the like.
When an antenna coil is formed on a device by using a sputtering method, a vacuum evaporation method, and a plating method, an unnecessary conductor adheres to an outer peripheral portion of the IC device, and the insulating property of the IC device becomes a problem. On the other hand, when a required conductive pattern including a coil is formed on the completed wafer, even if an unnecessary conductor adheres to the outer peripheral portion of the completed wafer during sputtering or the like, the unnecessary portion is originally disposed as an unnecessary portion. Since this is the part to be performed, the insulation of the individual IC elements does not matter.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS <IC Element> First, the structure of an IC element manufactured by the method according to the present invention will be described with reference to FIGS. 1A, 1B, and 1C are plan views of an IC element, and FIGS. 2A and 2B are cross-sectional views of main parts of the IC element.

As shown in FIGS. 1 and 2, the IC element of this embodiment is provided with an insulating surface protective film 2 such as a silicon oxide film or a resin film on the side of the IC element 1 on which the input / output terminals 1a are formed. An antenna coil 3 having a rectangular spiral shape is formed integrally with the antenna coil.

The IC element 1 shown in FIG.
The antenna coil 3 is formed only on the outer peripheral portion except for the antenna coil 3, and it is possible to prevent the occurrence of stray capacitance between the antenna coil 3 and a circuit formed in the IC element 1, and to reduce the power from the reader / writer. The receiving efficiency and the efficiency of transmitting and receiving signals to and from the reader / writer can be improved.

The IC element 1 shown in FIG.
Since the antenna coil 3 is formed up to the portion opposed to the above, the number of turns of the coil can be increased, so that the efficiency of receiving power from the reader / writer and the efficiency of transmitting and receiving signals to and from the reader / writer can be improved. FIG.
In the example of (b), the antenna coil 3 is formed on the portion facing the circuit forming portion 4 and on the outer periphery thereof, but may be formed only on the portion facing the circuit forming portion 4.

The IC element 1 shown in FIG. 1 (c) is obtained by obliquely chamfering a corner portion of an antenna coil 3 formed in a rectangular spiral shape. Can be reduced, and the efficiency of receiving power from the reader / writer and the efficiency of transmitting and receiving signals to and from the reader / writer can be increased. The same effect can be obtained even if the shape of the chamfer is circular. In addition, it is preferable that the chamfering is performed on both the inner circumference side and the outer circumference side of each line, but the effect is also obtained when the chamfering is performed only on the outer circumference side.

In any case, in order to receive a sufficient power supply for practical use and secure communication characteristics with the reader / writer, the line width of the antenna coil 3 must be 7 μm or more, Is preferably 5 μm or less and the number of turns is 20 or more.

The connection between the input / output terminal 1a of the IC element 1 and the antenna coil 3 is made through a through hole 5 formed in the surface protection film 2. In this case, even if the formation position of the antenna coil 3 is slightly shifted, the connection between the input / output terminal 1a and the antenna coil 3 is ensured, as shown in FIG.
As shown in (b), it is more preferable that the diameter or the width of the through hole 5 is smaller than the line width of the antenna coil 3.

The conductor forming the antenna coil 3 is shown in FIG.
As shown in (a) and (b), it has a multilayer structure including a metal sputtering layer or a metal deposition layer 6 and a metal plating layer 7. FIG. 2A shows an example in which the metal plating layer 7 is formed only on the upper surface of the metal sputtering layer or the metal deposition layer 6.
(B) shows an example in which the metal plating layer 7 is formed on the entire peripheral surface of the metal sputtering layer or the metal deposition layer 6. The metal sputter layer or metal deposition layer 6 and the metal plating layer 7 can be formed of any conductive metal, but are relatively inexpensive and have high conductivity. It is preferably formed of a metal selected from aluminum, nickel, copper and chromium, or an alloy of two or more metals selected from the group consisting of these metals. In addition to a uniform single-layer structure, different metal layers or alloy layers May be formed in a multi-layer structure of other layers. On the other hand, the metal plating 7 is preferably formed of copper, and can be formed by electroless plating, electroplating, or precision electroforming.

<Method of Manufacturing IC Element> An embodiment of a method of manufacturing an IC element according to the present invention will be described below with reference to FIGS. FIG. 3 is a plan view of a so-called completed wafer completed through a predetermined process, FIG. 4 is a process diagram showing a first example of an IC element manufacturing method according to the present invention, and FIG. 5 is an IC element manufacturing method according to the present invention. FIG. 6 is a process diagram showing a second example of FIG.
FIG. 3 is a plan view of a completed wafer on which required conductive patterns including an antenna coil are formed.

As shown in FIG. 3, the completed wafer 11 has
Circuits for multiple IC elements 4 on the inner periphery except the outermost periphery
Are formed at equal intervals, and a required surface protective film 2 is formed on the circuit forming surface side (see FIGS. 4 and 5).

In the method of manufacturing an IC device according to the first embodiment shown in FIG. 4, first, as shown in FIG. 4A, aluminum is formed on the surface protection film 2 formed on the circuit formation surface of the completed wafer 11. Alternatively, using an aluminum alloy, copper, or a copper alloy, the metal sputtering layer or the metal deposition layer 6 is formed uniformly. Next, as shown in FIG. 4B, a photoresist layer 12 is uniformly formed on the metal sputtering layer or the metal deposition layer 6, and a required pattern including a coil is formed on the formed photoresist layer 12. The photoresist layer 12 is exposed by irradiating the mask 13 with light 14 having a predetermined wavelength from outside the mask 13. After that, the exposed photoresist layer 12 is subjected to a developing process, and FIG.
As shown in FIG. 5, the exposed portion of the photoresist layer 12 is removed to expose a portion of the metal sputtered layer or the metal deposited layer 6 corresponding to the exposed pattern. As shown in FIG. 6, the exposed pattern of the metal sputtering layer or the metal deposition layer 6 includes a ring-shaped electrode portion 15, an antenna coil 3 formed in a portion facing each of the circuit forming portions 4, Lead part 1 for connecting part 15 and each antenna coil 3
6 are included. Next, using the electrode portion 15 as one electrode, electroplating or precision electroforming is performed on an exposed portion of the metal sputter layer or the metal deposition layer 6, and as shown in FIG. The metal plating layer 7 is laminated on the exposed portion of the metal layer 6. Next, the photoresist layer 12 adhered to the surface of the completed wafer 11 is removed by an ashing process or the like, and as shown in FIG. A completed wafer 11 on which the metal plating layer 7 having the leads 3 and the lead portions 16 is formed is obtained. Next, the metal plating layer 7
The exposed metal sputter layer or metal deposition layer 6 is selectively etched to remove the metal sputter layer or metal evaporation layer 6 exposed from the metal plating layer 7 as shown in FIG. As a result, a completed wafer 11 in which both the metal sputtered layer or the metal deposited layer 6 and the metal plated layer 7 are formed into the required conductive patterns shown in FIG. 6 is obtained. Finally,
By scribing the completed wafer 11, the required IC element 1 shown in FIG. 1 is obtained.

In the above-described embodiment, the electroplating method or the precision electroforming method is used as a means for forming the metal plating layer 7, but instead of such a configuration, the metal plating layer is formed by using an electroless plating method. 7 can also be formed. In this case, an electrode is not required for forming the metal plating layer 7, and therefore, when the photoresist layer 12 is exposed,
The formation of the lead 5 and the formation of the lead portion 16 become unnecessary.

Electroless plating is also called chemical plating,
The base metal is immersed in a metal salt solution of the plating metal to deposit metal ions on the surface of the base metal, and the feature is that a relatively simple facility can be used to obtain a plating layer having a strong adhesion and a uniform and sufficient thickness. . The metal salt serves as a supply source of metal ions to be plated. When plating copper, a solution such as copper sulfate, cupric chloride, or copper nitrate is used as a plating solution. Metal ions such as copper are deposited only on the base metal sputtered layer or metal deposited layer 6 and not on the insulating surface protection layer 2. The base material needs to have a low ionization tendency with respect to the plating metal ions and have a catalytic action on the deposition of the plating metal ions. For this reason, when plating copper on the metal sputtered layer or the metal deposited layer 6 made of aluminum, nickel is formed on the surface of the aluminum layer to a thickness of several μm or less,
It is preferable to perform a pretreatment of immersing in a zinc nitrate solution for several seconds to replace with zinc.

On the other hand, in the electroplating method and the precision electroforming method, the completed wafer 11 on which the metal sputtered layer or the metal deposited layer 6 is formed and the electrode made of the plated metal are immersed in a plating bath containing ions of the plated metal. A voltage is applied using the metal sputtered layer or the metal deposited layer 6 formed on the completed wafer 11 as a cathode and the electrode immersed in the plating bath as an anode to apply metal ions in the plating bath to the metal sputtered layer or the metal deposited layer 6. It is a method of precipitating on the surface of the. Electroplating and precision electroforming also use copper sulfate, cupric chloride,
A solution such as copper nitrate is used as a plating solution.

The method of manufacturing an IC device according to the present embodiment uses the completed wafer 1
1, a required conductive pattern including a coil is formed, and then the completed wafer 11 is scribed to obtain a required IC element 1. Therefore, the coil is formed as compared with the case where the coil is formed in each individual IC element. Integrated I
The C element can be manufactured with high efficiency, and the manufacturing cost can be reduced. Further, since a coil having a uniform thickness can be formed with high precision for all the IC elements formed on the wafer, it is possible to reduce variation in communication characteristics. Furthermore, if a coil is formed by sputtering or vacuum evaporation and plating for each IC element, unnecessary conductors adhere to the outer periphery of the IC element, causing a problem of insulation of the IC element. In the case where a required conductive pattern including a coil is formed on 11, even if an unnecessary conductor adheres to the outer peripheral portion of the completed wafer 11 at the time of sputtering or the like, this portion is a portion that should be originally disposed as an unnecessary portion. Therefore, there is no adverse effect on the insulating properties of the individual IC elements. In addition, the method of manufacturing an IC element of this example
The metal plating layer 7 is formed in a state where the photoresist layer 12 is present, and thereafter, the metal sputtering layer or the metal deposition layer 6 is formed.
Since the portion where the metal plating layer 7 is not laminated is removed by etching, the metal plating layer 7 is laminated only on the upper surface of the metal sputtering layer or the metal vapor deposition layer 6 as shown in FIG. Since the antenna coil 3 does not spread in the width direction, a precise antenna coil 3 can be formed, and the antenna coil 3 having a large number of turns can be formed in a small area.

On the other hand, according to the second embodiment shown in FIG.
In the method for manufacturing the C element, as shown in FIG. 5A, a photoresist layer 12 is uniformly formed on a surface protection film 2 formed on a completed wafer 11, and the formed photoresist layer 1 is formed.
A mask 1 in which a required pattern including a coil is formed in 2
3 and the photoresist layer 12 is exposed by irradiating light 14 having a predetermined wavelength from outside the mask 13. Thereafter, the exposed photoresist layer 12 is subjected to a development process, and FIG.
As shown in (b), the exposed portions of the photoresist layer 12 are removed to expose portions of the surface protection film 2 corresponding to the exposure patterns. As shown in FIG. 6, the exposure pattern of the photoresist layer 12 can have a shape including the electrode portion 15, the antenna coil 3, and the lead portion 16.
Next, the completed wafer 11 after the development processing is mounted on a sputtering apparatus or a vacuum evaporation apparatus, and a metal sputtering layer or a metal evaporation layer 6 is formed on the exposed portion of the surface protective film 2 as shown in FIG. . Next, as shown in FIG.
After the photoresist layer 12 adhered to the completed wafer 11 is removed by an ashing process or the like, an electroplating is performed on the metal sputtering layer or the metal deposition layer 6 using the electrode portion 15 as one electrode, as shown in FIG. Then, a metal plating layer 7 is laminated on an exposed portion of the metal sputtering layer or the metal deposition layer 6. Finally, the completed wafer 11 is scribed to obtain a required IC element 1 shown in FIG.

In the above-described embodiment, the electroplating method is used as a means for forming the metal plating layer 7, but the electroplating method may be used instead of the structure to form the metal plating layer 7. Can also. In this case, since no electrode is required for forming the metal plating layer 7, the formation of the electrode portion 15 and the formation of the lead portion 16 are unnecessary when exposing the photoresist layer 12.

The method of manufacturing an IC element according to the present embodiment has the same effects as the method of manufacturing an IC element according to the first embodiment, and can reduce the number of steps for forming a conductive pattern on the completed wafer 11. An IC element in which an antenna coil is integrally formed can be manufactured with higher efficiency.

<Information Carrier> Hereinafter, an example of the configuration of an information carrier including an IC element manufactured by the method according to the present invention will be described.
A description will be given based on FIGS. 7 to 17. 7 is a partially cut-away plan view of the information carrier according to the first configuration example, FIG. 8 is an exploded perspective view of the information carrier according to the first configuration example, FIG. 9 is a cross-sectional view of the information carrier according to the first configuration example, FIG. 10 is an explanatory view of the use state of the information carrier according to the first configuration example, FIG. 11 is a cross-sectional view of the information carrier according to the second configuration example, FIG. 12 is a cross-sectional view of the information carrier according to the third configuration example, FIG. Is a cross-sectional view of the information carrier according to the fourth configuration example, FIG. 14 is a cross-sectional view of the information carrier according to the fifth configuration example, FIG. 15 is a cross-sectional view of the information carrier according to the sixth configuration example, and FIG. FIG. 17 is a cross-sectional view of an information carrier according to an eighth configuration example.

The information carrier 20a according to the first configuration example is shown in FIG.
As shown in FIG. 9 to FIG. 9, a coin-shaped base 21 having a circular planar shape is formed, and the IC element 1 is set at the center of the base 21 in the plane direction and the thickness direction. IC
As the element 1, as shown in FIGS. 1 and 2, an element integrally formed with an antenna coil is used.

As shown in FIG. 8 and FIG.
It is composed of an upper member 22, an intermediate member 23, and a lower member 24, which are integrally joined via an adhesive layer 25, respectively. Each member 22, 23, 24 constituting the base 21
Can be formed from paper or plastic sheet, but it is naturally decomposed after disposal, generates a small amount of harmful gas even when incinerated, and is inexpensive. Particularly preferred. Also, it is of course possible to form one or two of the members 22, 23, 24 from a paper material and form the other one or two from a plastic sheet.

At the center of the intermediate member 23, a through hole 27 into which the IC element 1 can be inserted is opened, and an IC is formed in a space formed by joining the members 22, 23, 24. The element 1 is housed. The IC element 1 is
It is preferable to adhere to the lower member 24 in order to prevent shaking during handling. In this case, an adhesive layer 25 is uniformly formed on one surface of the lower member 24, and the intermediate member 23 and the lower member 24 are bonded using the adhesive layer 25, and the lower member 24 and the IC element 1 are connected to each other. Is advantageous in terms of cost. Further, the planar shape of the through hole 27 can be any shape. However, when the IC element 1 is housed in a concave portion formed by joining the intermediate member 23 and the lower member 24, the concave portion and the IC element Since it is not necessary to strictly adjust the directions of the rotation directions, it is more advantageous in manufacturing to form a circular through hole 27 as shown in FIGS.

In the information carrier 20a of this embodiment, since the IC element 1 is disposed at the center of the base 21 formed in a circular shape in the plane direction, as shown in FIG.
The information carrier 20 is inserted into the slot 101 of the reader / writer 100 having the antenna coil 102 for non-contact communication provided at the center of the arc portion in the slot 101.
Can be automatically centered between the antenna coil 3 integrally formed on the IC element 1 and the antenna coil 102 provided on the reader / writer 100, and the electromagnetic coupling coefficient between the coils 3 and 102 can be automatically adjusted. Therefore, power supply from the reader / writer 100 to the information carrier 20 and transmission / reception of signals between the reader / writer 100 and the information carrier 20 can be reliably performed. In addition, since the planar shape of the information carrier 20a is circular, there is no directionality with respect to the substantially semicircular slot 101,
Excellent ease of use. Further, the IC element 1 is
Since the IC element 1 is completely housed inside, the protection effect of the IC element 1 is high and the durability is excellent, and since the IC element 1 is not seen from the part, the appearance is also excellent.

The information carrier 20b according to the second configuration example is similar to the information carrier 20b shown in FIG.
1, the upper member 22, the intermediate member 23, and the lower member 2
The base 21 is composed of the three members 4 and 4, and the IC 21
A booster coil 28 for enhancing electromagnetic coupling between the antenna coil 3 and a coil provided in the reader / writer is arranged concentrically around the element 1. Reference numeral 29 in the drawing denotes a recess for accommodating the booster coil 28, and the recess 29 is formed in a ring shape around the through hole 27 of the intermediate member 23. Other configurations are the same as those of the information carrier 20a according to the first configuration example, and a description thereof will be omitted to avoid duplication. The information carrier 20b of the present example is the information carrier 20 according to the first configuration example.
a, the booster coil 28 is arranged concentrically around the IC element 1.
Antenna coil 3 and reader / writer 10 integrally formed in
The electromagnetic coupling with the antenna coil 102 provided at 0 can be made higher through the booster coil 28, thereby further stabilizing power supply, stabilizing signal transmission / reception, or increasing communication distance. be able to.

The information carrier 20c according to the third configuration example is shown in FIG.
As shown in FIG. 2, the base 21 is constituted by two members, an upper member 22 and a lower member 24, and a recess 30 for accommodating the IC element 1 is formed in the lower member 24. Other configurations are the same as those of the information carrier 20a according to the first configuration example, and a description thereof will be omitted to avoid duplication. The information carrier 20c of this example has the same effects as the information carrier 20a according to the first configuration example, and also has a small number of parts, so that the cost of the information carrier can be further reduced.

The information carrier 20d according to the fourth configuration example is similar to that of FIG.
As shown in FIG. 3, the base 21 is constituted by two members, the upper member 22 and the lower member 24, and the first recess 30 for housing the IC element 1 and the second member for housing the booster coil 28 in the lower member 24. It is characterized in that two concave portions 29 are formed.
Other configurations are the same as those of the information carrier 20c according to the third configuration example, and a description thereof will be omitted to avoid duplication. The information carrier 20c of the present example has the same effects as the information carrier 20b according to the second configuration example, and the number of parts is small, so that the cost of the information carrier can be further reduced.

The information carrier 20e according to the fifth configuration example is similar to the information carrier 20e shown in FIG.
As shown in FIG. 4, the base member 21 is composed of an upper member 22 having a through hole 27 for accommodating an IC element and a lower member 24 having no through hole 27, and the upper member 22 and the lower member 24 are formed. IC in the recess formed by joining
The device 1 is housed, and the inside of the concave portion is sealed with a potting resin 31. For other configurations,
Since it is the same as the information carrier 20a according to the first configuration example, the description is omitted to avoid duplication. The information carrier 20e of this example has the same effect as the information carrier 20a according to the first configuration example, except that the IC element 1 is not covered with the base.

The information carrier 20f according to the sixth configuration example is similar to the information carrier 20f shown in FIG.
As shown in FIG. 5, an upper member 22 having a through hole 27 for accommodating an IC element and a concavity 29 for accommodating a booster coil formed concentrically around the through hole 27;
7 and a lower member 24 having no concave portion 29, the base body 21 is formed, a booster coil 28 is housed in the concave portion 29, and a potting resin 31 is formed in the concave portion 29.
In addition, the IC element 1 is housed in a recess formed by joining the upper member 22 and the lower member 24, and the recess is sealed with a potting resin 31. Other configurations are the same as those of the information carrier 20e according to the fifth configuration example, and a description thereof will be omitted to avoid duplication. The information carrier 20f of the present example is an IC
Except that the element 1 is not covered with the base, it has the same effect as the information carrier 20a according to the first configuration example.

The information carrier 20g according to the seventh configuration example is different from the one shown in FIG.
As shown in FIG. 6, the base 21 is constituted by one member having a concave portion 30 for accommodating the IC element 1 on one surface,
The IC element 1 is housed in the recess 30, and the interior of the recess 30 is sealed with a potting resin 31.
Other configurations are the same as those of the information carrier 20e according to the fifth configuration example, and a description thereof will be omitted to avoid duplication. The information carrier 20g of the present example has the same effects as the information carrier 20e according to the fifth configuration example, and the number of parts is small, so that the cost of the information carrier can be further reduced.

The information carrier 20h according to the eighth configuration example is the same as that shown in FIG.
As shown in FIG. 7, a first recess 30 for housing the IC element 1 on one side and a second recess 30 for housing the booster coil 28 are provided.
The base 21 is constituted by one member having the concave portion 29 formed therein, the IC element 1 is housed in the first concave portion 30, the inside of the concave portion 30 is sealed with a potting resin 31, and the inside of the second concave portion 29 is formed. It is characterized in that the booster coil 28 is housed and the inside of the concave portion 29 is sealed with a potting resin 31. Other configurations are the same as those of the information carrier 20g according to the seventh configuration example, and a description thereof will be omitted to avoid duplication. The information carrier 20h of the present example has the same effect as the information carrier 20f according to the sixth configuration example,
Since the number of parts is small, the cost of the information carrier can be further reduced.

It should be noted that in each of the above configuration examples, the base 21
Is formed in a circular shape, but may be formed in any other shape such as a square, a rectangle, a triangle, or a polygon.

Further, in the information carrier according to the second, fourth, sixth and eighth configuration examples, the booster coil 28 formed as an independent and separate body is installed in the concave portion or the through hole. Alternatively, the booster coil 28 can be directly formed on any member constituting the base 21 by, for example, printing, plating, or sputtering.

Further, the booster coil 28 includes a first coil mainly electromagnetically coupled to the antenna coil, and a second coil mainly electromagnetically coupled to the non-contact communication coil provided in the reader / writer. The diameter of the two coils may be larger than the diameter of the first coil, and the first and second coils may be connected in series.

<Method of Manufacturing Information Carrier> Next, a method of manufacturing an information carrier on which an IC element manufactured by the method according to the present invention is mounted will be described with reference to FIGS. FIG. 18 is a partial perspective view showing a first example of a band-shaped material used for manufacturing the information carrier according to the present invention, and FIG. 19 is a second example of the band-shaped material.
FIG. 20 is a partial perspective view showing a third example of a band-shaped material, FIG. 21 is a partial perspective view showing a fourth example of a band-shaped material, and FIG. 22 is a partial perspective view showing a fifth example of a band-shaped material. FIG.

In the method of manufacturing an information carrier according to the present embodiment, an IC element 1 is used as a material for forming one base (a band-shaped material) formed in a band.
Set the required mounting parts including, and then, if necessary, join another band-like material to one or both sides of the band-like material or perform potting of the mounting parts, and then a single or joined band-like A required information carrier is stamped and formed from a material. As shown in FIG. 18, the IC element 1 is
The band-shaped material 41 in which the through holes 27 for accommodating the IC elements 1 are opened at regular intervals, and as shown in FIG.
A ring-shaped recess 29 for accommodating the booster coil 28 is formed concentrically therearound.
2 having an adhesive layer 32 applied to the bottom surface of FIG.
As shown in FIG. 2, recesses 30 for accommodating the IC element 1 are provided at regular intervals, and the adhesive layer 3 is provided on the bottom surface of the recess 30.
2, a band-shaped material 43 coated with an IC as shown in FIG.
First concave portions 30 for accommodating the elements 1 are opened at regular intervals, and a booster coil 2 is provided around each first concave portion 30.
8 are formed concentrically, and the adhesive layer 32 is formed on the bottom surface of each of the concave portions 29 and 30.
22, a band-shaped material 45 having no adhesive holes or recesses on one side without any through holes or concave portions is selectively used as shown in FIG.

The first example of the information carrier manufacturing method is for manufacturing the information carrier 20a according to the first configuration example.
One strip-shaped material 41 shown in FIG.
A band-shaped material 45 is used. Then, first, the strip-shaped material 41
A band-shaped material 45 is bonded to one side of the
Belt-shaped members 41 and 4 having a space in which IC element 1 can be stored
5 are obtained. Next, the IC element 1 is positioned and stored in the space, and the band-shaped material 4 is placed via the adhesive layer 25.
Adhere to 5. Next, another one is placed on the other side of the belt-shaped material 41.
The strip materials 45 are joined via the adhesive layer 25 to obtain a joined body of the strip members 41 and 45 in which the IC elements 1 are accommodated in the internal space. Finally, the joined body is cut into a predetermined shape to obtain the information carrier 20a according to the first configuration example. The information carrier manufacturing method of this example uses a large number of ICs on the strip-shaped materials 41 and 45.
The element 1 is casing, and thereafter, the band-shaped material 41,
Since the required information carrier is punched and formed from 45, the same information carrier can be manufactured with high efficiency, and the manufacturing cost of the information carrier can be reduced.

The second example of the information carrier manufacturing method is for manufacturing the information carrier 20b according to the second configuration example.
One strip-shaped material 42 shown in FIG.
One strip-shaped material 45 is used. Then, first, the strip-shaped material 42
Booster coil 2 in ring-shaped recess 29 formed in
8 is housed and bonded to the bottom surface of the concave portion 29 via the adhesive layer 32. Next, the adhesive layer 2 is applied to one side of the belt-shaped material 42.
5, the band-shaped material 45 is bonded to obtain a bonded body of the band-shaped members 42 and 45 having a space in which the IC element 1 can be stored.
Next, the IC element 1 is positioned and stored in the space, and is adhered to the belt-shaped material 45 via the adhesive layer 25. Next, another belt-shaped material 45 is provided on the other surface side of the belt-shaped material 41.
Are bonded via the adhesive layer 25 to obtain a bonded body of the band-shaped members 42 and 45 in which the IC element 1 is accommodated in the internal space. Finally, the joined body is cut into a predetermined shape to obtain the information carrier 20b according to the second configuration example. The information carrier manufacturing method of the present example also has the same effects as the information carrier manufacturing method according to the first example.

The third example of the information carrier manufacturing method according to the present invention is for manufacturing the information carrier 20c according to the third configuration example, and includes one strip-shaped material 43 shown in FIG. Is used. First, the IC element 1 is positioned and accommodated in the concave portion 30 formed in the belt-shaped material 43, and the concave portion 3 is placed via the adhesive layer 32.
Glue to the bottom of 0. Next, the band-shaped material 45 is bonded to the recess-forming surface side of the band-shaped material 43 via the adhesive layer 25, and the band-shaped members 43, 45 in which the IC elements 1 are stored in the internal space.
To obtain a conjugate. Finally, the joined body is cut into a predetermined shape to obtain the information carrier 20c according to the third configuration example. The information carrier manufacturing method of the present example also has the same effects as the information carrier manufacturing method according to the first example.

The fourth example of the information carrier manufacturing method is for manufacturing the information carrier 20d according to the fourth configuration example.
One strip-shaped material 44 shown in FIG. 21 and one strip-shaped material 44 shown in FIG.
A band-shaped material 45 is used. Then, first, the belt-shaped material 44
The IC element 1 is positioned and accommodated in the first concave portion 30 formed on the base member, and is adhered to the bottom surface of the concave portion 30 via the adhesive layer 32. The booster coil 28 is housed in the concave portion 29 and adheres to the bottom surface of the concave portion 29 via the adhesive layer 32. Next, the band-shaped material 45 is bonded to the concave portion forming surface side of the band-shaped material 44 via the adhesive layer 25 to obtain a bonded body of the band-shaped members 44 and 45 in which the IC elements 1 are accommodated in the internal space. Finally, the joined body is cut into a predetermined shape to obtain the information carrier 20c according to the third configuration example. The information carrier manufacturing method of the present example also has the same effect as the information carrier manufacturing method according to the first example.

The fifth example of the information carrier manufacturing method is for manufacturing the information carrier 20e according to the fifth configuration example,
One strip-shaped material 41 shown in FIG. 18 and one strip-shaped material 41 shown in FIG.
A band-shaped material 45 is used. Then, first, the strip-shaped material 41
A band-shaped material 45 is bonded to one side of the
Belt-shaped members 41 and 4 having a space in which IC element 1 can be stored
5 are obtained. Next, the IC element 1 is positioned and stored in the space, and the band-shaped material 4 is placed via the adhesive layer 25.
Adhere to 5. Next, the space in which the IC element 1 is stored is filled with the potting resin 31 to obtain a joined body of the band-shaped members 41 and 45 in which the IC element 1 is set. Finally,
The joined body is cut into a predetermined shape to obtain the information carrier 20e according to the fifth configuration example. The information carrier manufacturing method of the present example also has the same effect as the information carrier manufacturing method according to the first example.

The sixth example of the information carrier manufacturing method is for manufacturing the information carrier 20f according to the sixth configuration example.
One strip-shaped material 42 shown in FIG. 19 and one strip-shaped material 42 shown in FIG.
One strip-shaped material 45 is used. Then, first, the strip-shaped material 42
Booster coil 2 in ring-shaped recess 29 formed in
8 is housed and bonded to the bottom surface of the concave portion 29 via the adhesive layer 32. Next, on one side of the band-shaped material 42, the band-shaped material 4
5 are bonded via the adhesive layer 25 to obtain a bonded body of the belt-shaped members 42 and 45 having a space in which the IC element 1 can be stored.
Next, the IC element 1 is positioned and stored in the space, and is adhered to the belt-shaped material 45 via the adhesive layer 25. Next, a potting resin 31 is filled in the recess 29 in which the booster coil 28 is accommodated and the space in which the IC element 1 is accommodated. Get the body. Finally, the joined body is cut into a predetermined shape to obtain an information carrier 20f according to the sixth configuration example. The information carrier manufacturing method of the present example also has the same effects as the information carrier manufacturing method according to the first example.

The seventh example of the information carrier manufacturing method is for manufacturing the information carrier 20g according to the seventh configuration example,
One strip-shaped material 43 shown in FIG. 20 is used. And
First, the IC element 1 is placed in the recess 30 formed in the belt-shaped material 43.
Is positioned and stored, and is adhered to the bottom surface of the concave portion 30 via the adhesive layer 32. Next, a potting resin 31 is filled in the recess 30 in which the IC element 1 is stored, and I
The belt-shaped member 43 on which the C element 1 is set is obtained. Finally, the band-shaped member 43 is cut into a predetermined shape to obtain an information carrier 20g according to the seventh configuration example. The information carrier manufacturing method of the present example also has the same effect as the information carrier manufacturing method according to the first example.

An eighth example of the information carrier manufacturing method is for manufacturing the information carrier 20h according to the eighth configuration example.
One strip-shaped material 44 shown in FIG. 21 is used. And
First, the IC element 1 is positioned and accommodated in the first concave portion 30 formed in the band-shaped material 44, adhered to the bottom surface of the concave portion 30 via the adhesive layer 32, and a ring formed in the band-shaped material 44 is formed. The booster coil 28 is housed in the second concave portion 29 having a shape, and is adhered to the bottom surface of the concave portion 29 via the adhesive layer 32. Next, a potting resin 31 is filled in the first recess 30 in which the IC element 1 is stored and in the second recess 29 in which the booster coil 28 is stored.
Band-shaped member 4 on which element 1 and booster coil 28 are set
Get 3. Finally, the joined body is cut into a predetermined shape to obtain an information carrier 20h according to the eighth configuration example. The information carrier manufacturing method of the present example also has the same effects as the information carrier manufacturing method according to the first example.

In the second, fourth, sixth, and eighth examples, the booster coil 28 is formed separately from the base 21. However, the booster coil 28 is formed by printing on one of the belt-like members constituting the base 21. You can also.

[0053]

As described above, according to the method of manufacturing an IC device of the present invention, after a required conductive pattern including an antenna coil is formed on a surface protective film of a completed wafer manufactured through a predetermined process, the method is performed. Since a completed wafer on which a required conductive pattern is formed is scribed to obtain an IC element with an integrated antenna coil, an IC element with an integrated coil is used as compared with a case where an antenna coil is formed on each IC element. It can be manufactured with high efficiency, and its manufacturing cost can be reduced. Further, since it becomes possible to form an antenna coil having a uniform thickness with high accuracy for all the IC elements formed on the wafer, it is possible to reduce the variation in communication characteristics. Further, since the outer peripheral portion of the completed wafer is a portion to be disposed of as an unnecessary portion, even if an unnecessary conductor adheres to the outer peripheral portion of the completed wafer in the step of forming a conductive pattern, the outer peripheral portion of the IC element as a product is not removed. No unnecessary conductors are formed, and there is no problem in insulation.

[Brief description of the drawings]

FIG. 1 is a plan view of an IC device manufactured by a method according to the present invention.

FIG. 2 is a cross-sectional view of a main part of an IC element manufactured by a method according to the present invention.

FIG. 3 is a plan view of a completed wafer.

FIG. 4 is a process chart showing a first example of an IC element manufacturing method according to the present invention.

FIG. 5 is a process chart showing a second example of the method for manufacturing an IC element according to the present invention.

FIG. 6 is a plan view of a completed wafer on which required conductive patterns including an antenna coil are formed.

FIG. 7 is a partially cut-away plan view of the information carrier according to the first configuration example.

FIG. 8 is an exploded perspective view of the information carrier according to the first configuration example.

FIG. 9 is a cross-sectional view of the information carrier according to the first configuration example.

FIG. 10 is an explanatory diagram of a use state of the information carrier according to the first configuration example.

FIG. 11 is a sectional view of an information carrier according to a second configuration example.

FIG. 12 is a sectional view of an information carrier according to a third configuration example.

FIG. 13 is a sectional view of an information carrier according to a fourth configuration example.

FIG. 14 is a sectional view of an information carrier according to a fifth configuration example.

FIG. 15 is a sectional view of an information carrier according to a sixth configuration example.

FIG. 16 is a sectional view of an information carrier according to a seventh configuration example.

FIG. 17 is a sectional view of an information carrier according to an eighth configuration example.

FIG. 18 is a partial perspective view showing a first example of a belt-shaped material.

FIG. 19 is a partial perspective view showing a second example of the belt-shaped material.

FIG. 20 is a partial perspective view showing a third example of the belt-shaped material.

FIG. 21 is a partial perspective view showing a fourth example of the belt-shaped material.

FIG. 22 is a partial perspective view showing a fifth example of the belt-shaped material.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 IC element 2 Surface protective film 3 Antenna coil 4 Circuit formation part 5 Through-hole 6 Metal sputter layer or metal deposition layer 7 Metal plating layer 11 Complete wafer 12 Photoresist layer 13 Mask 14 Light of predetermined wavelength 15 Electrode part 16 Lead part 20a ~ 20h Information carrier 21 Base 22 Upper member 23 Intermediate member 24 Lower member 25 Adhesive layer 27 Through hole 28 Booster coil 29 Depression 41-45 Strip material

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01Q 1/38 G06K 19/00 H 7/00 K 23/00 F term (Reference) 5B035 AA07 BA05 BB09 CA02 CA23 5F038 AZ04 EZ04 EZ19 EZ20 5J021 AA01 AB04 FA29 HA05 HA10 JA07 JA08 5J046 AA03 AA07 AA08 AA10 AA13 AB11 PA06 PA07

Claims (1)

[Claims] After a required conductive pattern including an antenna coil is formed on a surface protection film of a completed wafer manufactured through a predetermined process, the completed wafer on which the required conductive pattern is formed is scribed to form an antenna. An IC characterized in that an IC element in which a coil is integrally formed is obtained.
Device manufacturing method.