JP2000321320A - Semiconductor testing device - Google Patents

Semiconductor testing device

Info

Publication number
JP2000321320A
JP2000321320A JP11127030A JP12703099A JP2000321320A JP 2000321320 A JP2000321320 A JP 2000321320A JP 11127030 A JP11127030 A JP 11127030A JP 12703099 A JP12703099 A JP 12703099A JP 2000321320 A JP2000321320 A JP 2000321320A
Authority
JP
Japan
Prior art keywords
semiconductor
photoelectric conversion
liquid crystal
crystal panel
semiconductor photoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11127030A
Other languages
Japanese (ja)
Inventor
Kazuya Koga
一矢 古賀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP11127030A priority Critical patent/JP2000321320A/en
Publication of JP2000321320A publication Critical patent/JP2000321320A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor testing device having a light source device of high accuracy in the test of electric characteristic of a semiconductor photoelectric converting element. SOLUTION: A liquid crystal panel device 2 is mounted on or closely contacted with a semiconductor photoelectric converting element 1 with the proper distance and position. The liquid crystal panel device 2 is electrically connected to a semiconductor testing device 3 with the semiconductor photoelectric element 1. The semiconductor testing device 3 controls the liquid crystal panel device 2, determines the necessary quantity of light and wavelength, and tests the electric characteristic of the semiconductor photoelectric converting element 1 every time.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、半導体検査装置
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor inspection device.

【0002】[0002]

【従来の技術】従来、CCD,CIS等の半導体光電変
換素子の電気特性検査においては、その光源装置とし
て、白熱電灯に干渉フィルターを組み合わせたものを用
いるか、あるいは赤色・緑色・青色の発光ダイオードを
用いたものによって、必要とする光量・波長を持つ光を
作り出し、検査しようとする半導体光電変換素子へ照射
することで電気特性検査に必要な環境を実現していた。
2. Description of the Related Art Conventionally, in testing electrical characteristics of a semiconductor photoelectric conversion element such as a CCD or a CIS, a light source device using a combination of an incandescent lamp and an interference filter or a red / green / blue light emitting diode is used. By using light emitting devices, light having a required light quantity and wavelength is produced and irradiated to a semiconductor photoelectric conversion element to be inspected, thereby realizing an environment required for electric characteristic inspection.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、上記の
方法のひとつ白熱電灯に干渉フィルターを組み合わせた
光源装置では高速な光量・波長の切り替えに問題があ
り、また赤色・緑色・青色の発光ダイオードを用いた光
源装置の場合は所望の波長の光を得ることが困難であ
り、さらには前記いずれの方法でも半導体光電変換素子
を構成する個々の光電変換素子へ確実かつ個別に所望の
光量・波長を照射することは不可能である。従って半導
体光電変換素子の電気特性検査環境としての理想的な光
源装置の条件を満たすことが出来ないため生産性および
製品保証ならびに製品への付加価値の向上の障害となっ
ていた。
However, one of the above-mentioned methods, a light source device in which an incandescent lamp is combined with an interference filter has a problem in high-speed switching of light quantity and wavelength, and uses red, green and blue light emitting diodes. In the case of a conventional light source device, it is difficult to obtain light of a desired wavelength, and further, in any of the above-described methods, the individual photoelectric conversion elements constituting the semiconductor photoelectric conversion element are reliably and individually irradiated with a desired light amount and wavelength. It is impossible to do. Therefore, the conditions of an ideal light source device as an environment for inspecting electrical characteristics of a semiconductor photoelectric conversion element cannot be satisfied, which hinders productivity, product warranty, and improvement in added value to a product.

【0004】[0004]

【問題点を解決するための手段】前記問題点を解決する
ために、この発明は電気特性検査を行おうとする半導体
光電変換素子へ例えば液晶パネル装置を適切な距離およ
び位置をもって配置、もしくは密着させ、光源装置とし
て用いようとするものである。
SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention arranges, for example, a liquid crystal panel device at an appropriate distance and position or makes close contact with a semiconductor photoelectric conversion element to be subjected to an electrical characteristic test. And a light source device.

【0005】[0005]

【発明の実施の形態】本発明は、半導体光電変換素子の
電気特性検査における光源装置として例えば液晶パネル
装置を用いることによって前述した理想的な光源装置に
求められる高速な光量・波長の切り替え、また液晶パネ
ル装置として微細なドット表示が可能な例えばTFTパ
ネル装置を用いることで所望の光量・波長の光を半導体
光電変換素子を構成する個々の光電変換素子へ確実かつ
個別に照射することによって理想的な電気特性検査の環
境を作りだすことが出来るので前述した課題を解決し、
半導体光電変換素子の電気特性検査における生産性およ
び製品保証ならびに製品への付加価値の向上を可能とし
たものである。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention provides a high-speed switching of light quantity and wavelength required for an ideal light source device by using, for example, a liquid crystal panel device as a light source device in an electrical characteristic test of a semiconductor photoelectric conversion element. By using, for example, a TFT panel device capable of displaying fine dots as a liquid crystal panel device, it is ideal to reliably and individually irradiate light of a desired light quantity and wavelength to individual photoelectric conversion elements constituting a semiconductor photoelectric conversion element. To solve the above-mentioned problems,
It is possible to improve the productivity and product guarantee in the electrical characteristic inspection of the semiconductor photoelectric conversion element, and to improve the added value to the product.

【0006】以下に、この発明の実施例を図面に基づい
て説明する。半導体光電変換素子1へ液晶パネル装置2
を適切な距離および位置をもって配置もしくは密着させ
ている。液晶パネル装置2は半導体光電変換素子1と共
に半導体検査装置3に電気的に接続されている。半導体
検査装置3は液晶パネル装置2を制御、必要とする光量
・波長を設定し、その都度半導体光電変化素子1に対し
電気特性検査を行う。
An embodiment of the present invention will be described below with reference to the drawings. Liquid crystal panel device 2 to semiconductor photoelectric conversion element 1
Are placed or adhered at an appropriate distance and position. The liquid crystal panel device 2 is electrically connected to the semiconductor inspection device 3 together with the semiconductor photoelectric conversion element 1. The semiconductor inspection device 3 controls the liquid crystal panel device 2, sets the required light amount and wavelength, and performs an electrical characteristic inspection on the semiconductor photoelectric change element 1 each time.

【0007】また前述した内容は光源装置として液晶パ
ネル装置を例としてあげたが、ELパネル装置・プラズ
マディスプレイ装置・CRT装置も同様に使用できるこ
とは明白である。
In the above description, a liquid crystal panel device is taken as an example of a light source device. However, it is apparent that an EL panel device, a plasma display device, and a CRT device can be used in the same manner.

【0008】[0008]

【発明の効果】この発明は、以上説明したように半導体
光電変換素子に対し、液晶パネル装置を適切な距離およ
び位置をもって配置し、半導体検査装置より制御できる
光源装置として構成したので半導体光電変換素子の理想
的な電気特性検査の環境を実現でき、生産性および製品
保証の向上ならびに製品への付加価値の向上の効果があ
る。
According to the present invention, as described above, the liquid crystal panel device is arranged at an appropriate distance and position with respect to the semiconductor photoelectric conversion element, and is configured as a light source device which can be controlled by the semiconductor inspection device. Can realize an ideal electrical characteristics inspection environment, and can improve productivity and product assurance and increase added value to products.

【図面の簡単な説明】[Brief description of the drawings]

【図1】図1は、本発明の半導体検査装置を示す断面図
である。
FIG. 1 is a sectional view showing a semiconductor inspection device of the present invention.

【符号の説明】[Explanation of symbols]

1 半導体光電変換素子 2 液晶パネル装置 3 半導体検査装置 Reference Signs List 1 semiconductor photoelectric conversion element 2 liquid crystal panel device 3 semiconductor inspection device

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 半導体光電変換素子の電気特性検査にお
ける光源装置として液晶パネル装置を用いたことを特徴
とする半導体検査装置。
1. A semiconductor inspection device, wherein a liquid crystal panel device is used as a light source device in an electrical characteristic inspection of a semiconductor photoelectric conversion element.
【請求項2】 半導体光電変換素子の電気特性検査にお
ける光源装置としてELパネル装置を用いたことを特徴
とする半導体検査装置。
2. A semiconductor inspection device, wherein an EL panel device is used as a light source device in an electrical characteristic inspection of a semiconductor photoelectric conversion element.
【請求項3】 半導体光電変換素子の電気特性検査にお
ける光源装置としてプラズマディスプレイ装置を用いた
ことを特徴とする半導体検査装置。
3. A semiconductor inspection device, wherein a plasma display device is used as a light source device in an electrical characteristic inspection of a semiconductor photoelectric conversion element.
【請求項4】 半導体光電変換素子の電気特性検査にお
ける光源装置としてCRT装置を用いたことを特徴とす
る半導体検査装置。
4. A semiconductor inspection device, wherein a CRT device is used as a light source device in an electrical characteristic inspection of a semiconductor photoelectric conversion element.
JP11127030A 1999-05-07 1999-05-07 Semiconductor testing device Pending JP2000321320A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11127030A JP2000321320A (en) 1999-05-07 1999-05-07 Semiconductor testing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11127030A JP2000321320A (en) 1999-05-07 1999-05-07 Semiconductor testing device

Publications (1)

Publication Number Publication Date
JP2000321320A true JP2000321320A (en) 2000-11-24

Family

ID=14949943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11127030A Pending JP2000321320A (en) 1999-05-07 1999-05-07 Semiconductor testing device

Country Status (1)

Country Link
JP (1) JP2000321320A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006349522A (en) * 2005-06-16 2006-12-28 Fujifilm Holdings Corp Method for testing solid-state image sensor and apparatus therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006349522A (en) * 2005-06-16 2006-12-28 Fujifilm Holdings Corp Method for testing solid-state image sensor and apparatus therefor

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