JP2000321319A - Strain component of transistor measuring method at operating amplification of multicarrier, and strain component measuring device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To independently set optimum impedance according to the characteristic by simultaneously and independently regulating input/output impedance against the basic wave, the higher harmonic component, and the lower frequency component of a transistor. SOLUTION: A signal of two waves synthesised out of respectively generated signals at a signal source 1 of frequency f1 and a signal source 2 of frequency f2 by an electric power synthesiser 3 is regulated by a variable attenuator, and input to a transistor 10 to be measured. The input side of a transistor 10 is connected to an impedance tuner 7 against a basic wave, and an impedance tuner 8 against a double wave and a triple wave. The differential frequency of the frequencies f1 and f2 being a strain component generated by a high output transistor 10 leaked in an input bias circuit 9 is regulated so that the characteristic of the high output transistor 10 becomes low strain, high efficiency, and high output, by an impedance tuner 17 constituted of an active element against low frequency of 0-1 GHz through a low pass filter 16.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a method and apparatus for measuring distortion components of a transistor during a multicarrier amplification operation.

[0002]

2. Description of the Related Art FIG. 10 shows a conventional measuring method shown in, for example, "High Efficiency Operation of FET by Injection of Double Harmonic Wave", Mitsubishi Electric, 1990, IEICE, Microwave Research Group. FIG. The method shown in FIG.
This is an example of a measurement method for achieving high efficiency by changing the impedance of a high-output transistor with respect to the second harmonic.
The measurement method described here aims at increasing the efficiency of an amplifier operating with one signal wave, and therefore, low frequency and harmonic components due to intermodulation generated by multicarrier operation do not appear, and the fundamental wave and the fundamental wave do not appear. The output side impedance for the second harmonic is changed.

In FIG. 10, reference numeral 100 denotes a signal source (synthesizer); 101, a power divider for distributing a fundamental wave from the signal source 100; 102, a multiplier; 103, a phase shifter; , 105 is a network analyzer, 106 to 108 are power meters, 109 to 1
11 is a bandpass filter, 112 is a circulator, 1
13 and 114 are a bias circuit, 115 and 116 are input and output circuits constituting a matching circuit, 117 is an FET, and 118 is a DC power supply.

In the measurement system shown in FIG. 10, the output matching circuit of the FET amplifier performs impedance matching with the fundamental wave and the second harmonic. The input signal is split into two by the power splitter 101, one of which is injected into the FET 117 and the other is injected into the multiplier 102. The double wave generated by the multiplier 102 is adjusted by the phase shifter 103 and the variable attenuator 104, and the broadband circulator 11 is adjusted.
2 is injected into the drain of the FET through the FET 2. F
Matching circuits 115 and 116 are provided at the input / output terminals of the ET 117.
, And the input circuit 115 matches with the fundamental wave, and the output circuit 116 matches with the fundamental wave and the second harmonic at the same time. The second harmonic injected into the FET 117 and the second harmonic generated by operating the FET 117 in the class B are input to the network analyzer 105, and the equivalent second-harmonic reflection coefficient Γ ₀ for the FET 117 is measured. . Reflection coefficient Γ ₀
Represents the voltage of the second harmonic output from the FET 117 as V ₁ ,
Assuming that the voltage of the _second harmonic injected from the drain is V ₂ ,
It is given by the following equation: Γ ₀ = V ₂ / V ₁ (1) Further, the load is expected from the FET 117 2
The harmonic reflection coefficient Γx is obtained by the following equation using the reflection coefficient Γ ₀ and the S parameter of the output matching circuit.

[0005]

(Equation 1)

As can be seen from the above equations (1) and (2),
The second-harmonic reflection coefficient Γx in anticipation of the load from the FET 117 is
By adjusting the amplitude and phase of the injected second harmonic by the variable attenuator 104 and the phase shifter 103, it is possible to set any value including | Γx | ≧ 1. Further, the termination condition of the second harmonic can be set independently of the termination condition of the fundamental wave.

FIG. 11 shows Focus Micro.
Active Harmonic L by wave
This is an example of a conventional measurement method for achieving high efficiency by changing the impedance of a high-output transistor configured using an oad pull “ALPS-308” with respect to the second and third harmonics. The measurement method described here is configured to change the impedance on the output side with respect to the fundamental wave, its second harmonic, and its third harmonic, and does not consider the setting of the impedance for low frequencies.

In the drawing, reference numeral 130 denotes a signal source (Synth)
eizer), 131 is A which generates a second harmonic and a third harmonic
LPS 132 is a network analyzer (Network
rkAnalyzer 133 is a harmonic rose that changes the impedance with respect to the second harmonic and the third harmonic.

In the measurement system shown in FIG. 11, the fundamental wave from the signal source 130 is distributed to the ALPS 131 and the network analyzer 132, and the harmonic rose 133 for changing the impedance with respect to the second harmonic and the third harmonic is changed to the AL.
PS131 and connect to the output side of the FET amplifier
The impedance of the third harmonic and the third harmonic is changed. The changed impedance value is stored in the network analyzer 1
Monitor at 32.

[0010]

The conventional measuring method shown in FIGS. 10 and 11 is an amplifier which operates with one signal wave only by setting the impedance for the second and third harmonics on the output side. However, there is a problem that the impedance for a low frequency required for high efficiency and low distortion during multi-carrier amplification operation must be fixed and measured.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and has been described in connection with the setting of low-frequency and high-frequency impedances for reducing distortion of a multicarrier amplifier used in microwaves or the like. It is an object of the present invention to provide a transistor distortion component measuring method and a measuring device that allow independent setting of an optimum impedance according to each characteristic, not only for characteristics but also for efficiency and gain.

[0012]

According to the present invention, a signal generating step for generating a signal for performing a multicarrier amplifying operation, and an input / output impedance of a transistor with respect to a fundamental wave of the signal generated in the signal generating step are adjusted. A harmonic component impedance adjusting step for adjusting the input / output impedance of the transistor with respect to the harmonic component of the signal generated in the signal generating step, and a low impedance of the signal generated in the signal generating step. A low frequency component impedance adjusting step for adjusting the input / output impedance of the transistor with respect to the frequency component, thereby simultaneously and independently adjusting the input / output impedance of the transistor with respect to the fundamental wave, the harmonic component, and the low frequency component. Input and output A distortion component measurement method of the transistor of the multi-carrier amplification operation and obtains the impedance.

The signal generating step includes a first signal generating step of generating a signal of a first frequency, and a second signal generating step of generating a signal of a second frequency different from the first frequency. And a power combining step of combining the signal of the first frequency and the signal of the second frequency.

The signal generating step includes a noise generating step of generating a noise signal.

In the low frequency component impedance adjustment step, at least one of the input and output impedances is adjusted using an impedance tuner composed of active elements for a low frequency of 0 to 1 GHz.

In the low frequency component impedance adjusting step, at least one of the input and output impedances is adjusted using an impedance tuner constituted by passive elements.

In the fundamental wave impedance adjusting step, at least one of the input and output impedances is adjusted using an impedance tuner constituted by passive elements.

In the harmonic component impedance adjusting step, at least one of the input and output impedances is adjusted using an impedance tuner constituted by passive elements.

The low frequency component impedance adjusting step includes an amplification step of amplifying the low frequency component, a phase shift adjusting step of adjusting the phase shift of the low frequency component, and an amplitude adjusting step of adjusting the amplitude of the low frequency component. , Is provided.

In the low frequency component impedance adjusting step, the low frequency component leaking into the bias application terminal on the input side of the transistor is amplified in the amplifying step, and the phase shift and the amplitude are adjusted in the phase shift adjusting step and the amplitude adjusting step. hand,
It is injected into the bias application terminal on the output side.

In the low frequency component impedance adjusting step, the low frequency component included in the output component of the transistor is amplified by the amplifying step, and the phase shift and the amplitude are adjusted by the phase shift adjusting step and the amplitude adjusting step, so that the output of the transistor is adjusted. In addition, the impedance for the low frequency component leaking into the bias application terminal on the input side of the transistor is adjusted by an impedance tuner composed of an active element for a low frequency of 0 to 1 GHz.

In the low-frequency component impedance adjusting step, the low-frequency component included in the output component of the transistor is divided into two powers, and each of the distributed low-frequency components is amplified by the amplifying step. The phase shift and the amplitude are adjusted by the adjustment step, and one is injected into the bias application terminal on the output side and the other is injected into the bias application terminal on the input side.

In the low frequency component impedance adjusting step, the impedance for the low frequency component leaking into the bias application terminal on the input side and the bias application terminal on the output side of the transistor is changed to the impedance constituted by the active element for the low frequency of 0 to 1 GHz. Along with the adjustment by the tuner, the low-frequency component leaking into the bias application terminal on the output side of the transistor is amplified by the amplification process, and the phase shift and the amplitude are adjusted by the phase shift adjustment process and the phase shift adjustment process.
It is injected into the bias application terminal on the input side of the transistor.

Also, the harmonic component impedance step
Power distributing the signal generated in the signal generating step, multiplying one of the power-divided signals to generate a harmonic component, and amplifying the harmonic component to adjust phase shift and amplitude. And injecting the adjusted harmonic component into at least one of the input side and the output side of the transistor.

Further, the harmonic component impedance step includes:
A harmonic component contained in the output component of the transistor is amplified, the phase shift and the amplitude are adjusted, and injected into at least one of the output side and the input side of the transistor.

According to the present invention, there is provided a signal generating means for generating a signal for performing a multicarrier amplifying operation, and a fundamental wave impedance adjusting means for adjusting an input / output impedance of a transistor with respect to a fundamental wave of the signal generated by the signal generating means. Means, a harmonic component impedance adjusting means for adjusting the input / output impedance of the transistor with respect to the harmonic component of the signal generated by the signal generating means, and the input of the transistor to the low frequency component of the signal generated by the signal generating means. Low frequency component impedance adjusting means for adjusting the output impedance,
Thus, the input and output impedances of the transistor for the fundamental wave, the harmonic component, and the low frequency component are simultaneously and independently adjusted, so that the input and output impedance for the low distortion operation is obtained.

Further, the signal generating means includes a first signal source for generating a signal of a first frequency, a second signal source for generating a signal of a second frequency different from the first frequency, and a second signal source. A power combiner that combines the signal of one frequency and the signal of the second frequency.

Further, the signal generating means includes a noise generating source for generating a noise signal.

The low-frequency component impedance adjusting means includes an impedance tuner composed of active elements for low frequencies of 0 to 1 GHz.

Further, the low frequency component impedance adjusting means includes an impedance tuner constituted by a passive element.

Further, the fundamental wave impedance adjusting means includes:
An impedance tuner including a passive element is provided.

Further, the harmonic component impedance adjusting means includes an impedance tuner constituted by a passive element.

The low frequency component impedance adjusting means includes an amplifier for amplifying the low frequency component, a phase shifter for adjusting the phase shift of the low frequency component, and a variable attenuator for adjusting the amplitude of the low frequency component. Have.

In the low frequency component impedance adjusting means, the low frequency component leaking into the bias application terminal on the input side of the transistor is amplified by an amplifier, and the phase shift and the amplitude are adjusted by a phase shifter and a variable attenuator. , Into the bias application terminal on the output side.

The low frequency component impedance adjusting means includes an impedance tuner composed of an active element for 0 to 1 GHz, and amplifies a low frequency component included in an output component of the transistor by an amplifier, and a phase shifter and a variable attenuator. To adjust the phase shift and amplitude, and inject the bias into the bias application terminal on the output side of the transistor, and adjust the impedance for the low frequency component leaking into the bias application terminal on the input side of the transistor by the impedance tuner.

Further, the low frequency component impedance adjusting means reduces the low frequency component contained in the output component of the transistor by two.
A power divider for power distribution is further provided, and two pairs of an amplifier, a phase shifter, and a variable attenuator are provided, and each of the two power-divided low-frequency components is amplified by the amplifier, and the phase shifter and Adjusting the phase shift and amplitude with a variable attenuator, injecting one into the bias application terminal on the output side,
The other is injected into the input side bias application terminal.

Further, the low frequency component impedance adjusting means includes an impedance tuner constituted by an active element for 0 to 1 GHz, and is provided for a low frequency component leaking into a bias application terminal on the input side and a bias application terminal on the output side of the transistor. The impedance is adjusted by the impedance tuner, and the low-frequency component leaking into the bias application terminal on the output side of the transistor is amplified by the amplifier, and the phase shift and the amplitude are adjusted by the phase shifter and the variable attenuator. Into the side bias application terminal.

Further, the harmonic component impedance means includes:
A power divider that distributes the power of the signal generated by the signal generator, a multiplier that generates a harmonic component by multiplying one of the power-divided signals, an amplifier that amplifies the harmonic component, and a harmonic component. And a variable attenuator that adjusts the amplitude of a harmonic component, and outputs the amplified harmonic component whose phase shift and amplitude have been adjusted to at least the input side and the output side of the transistor. Inject into either one.

Further, the harmonic component impedance means includes:
An amplifier that amplifies a harmonic component included in the output component of the transistor, a phase shifter that adjusts the phase shift of the harmonic component, and a variable attenuator that adjusts the amplitude of the harmonic component, are amplified by the amplifier. The harmonic component whose phase shift and amplitude have been adjusted by the phase shifter and the variable attenuator is injected into at least one of the output side and the input side of the transistor.

[0040]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 FIG. 1 is a block diagram showing an embodiment of the present invention. In the figure,
1 and 2 are signal sources, which generate signals of frequency f1 and frequency f2, respectively. Reference numeral 3 denotes a power combiner for combining signals generated by the signal source 1 and the signal source 2, respectively. 4 is a variable attenuator for adjusting the two-wave signal synthesized by the power combiner 3, 5 is a power sensor for measuring power, 6 is a directional coupler for distributing power, 7
Numeral 8 denotes an impedance tuner composed of passive elements for adjusting impedance, 9 denotes a bias circuit on the input side, and 10 denotes a high output transistor. 11 is a bias circuit on the output side, 12 and 13 are impedance tuners composed of passive elements, 14 is a bandpass filter for passing a fundamental wave, 15 is a spectrum analyzer for measuring a frequency spectrum, 16 is a low-pass filter, 17 And 18 are impedance tuners composed of active elements for low frequencies from 0 to 1 GHz,
Reference numeral 19 denotes a power supply for a gate bias, and reference numeral 20 denotes a power supply for a drain bias.

Next, the operation will be described. A signal generated by the signal source 1 having the frequency f1 and a signal generated by the signal source 2 having the frequency f2 are combined by the power combiner 3 into two variable signals.
And input to the transistor 10 to be measured. The input side of the transistor 10 is connected to an impedance tuner 7 for the fundamental wave and an impedance tuner 8 for the second and third harmonics, and a frequency which is a distortion component generated by the high output transistor 10 leaking into the input bias circuit 9. The difference frequency between f1 and f2 is converted to a low-pass filter 16.
The characteristic of the high-output transistor 10 is adjusted by the impedance tuner 17 configured by an active element for a low frequency of 0 to 1 GHz so as to have low distortion, high efficiency, and high output.

Similarly, an impedance tuner 13 for the fundamental wave and an impedance tuner 12 for the second and third harmonics are also connected to the output side of the transistor 10 to adjust the impedance by these components. The difference frequency between the inserted frequencies f1 and f2 is adjusted via the low-pass filter 16 in the same way as the input side by the impedance tuner 18 composed of active elements for low frequencies of 0 to 1 GHz. The input power is distributed by the directional coupler 6, the power is measured by the power sensor 5, and the frequency spectrum is measured by the spectrum analyzer 15.

As described above, in the prior art shown in FIGS. 10 and 11, the impedance for the low frequency had to be fixed and measured. However, according to this embodiment of the present invention, the multi-carrier amplification operation is performed. In the measurement of the distortion component of the transistor at the time, the low frequency (here, the difference frequency between the frequencies f1 and f2) and the harmonic (here, the difference frequency between the frequencies f1 and f2) generated by the multicarrier amplification operation of the transistor.
Since the input and output impedances for the distortion components of the second harmonic and the third harmonic can be simultaneously and independently changed together with the input and output impedances for the fundamental wave, low distortion, high efficiency, and high An optimum input / output impedance for output can be easily obtained by measurement, whereby low distortion, high efficiency, and high output operation during multicarrier amplification operation can be easily obtained.

Embodiment 2 FIG. 2 is a block diagram showing a configuration of the second embodiment of the present invention. 1-2 in the figure
0 is the same as that of FIG. 1 described above, and the description is omitted. In the figure, 21 is a network analyzer for measuring phase shift and amplitude components, 22 is a phase shifter for adjusting phase shift, 23 is an amplifier, and 28 is a power divider.

The operation will be described. The signal generated by the signal source 1 having the frequency f1 and the signal generated by the signal source 2 having the frequency f2 are combined by the power combiner 3 to adjust the two-wave signal by the variable attenuator 4 and input to the transistor 10 to be measured. The input side of the transistor 10 is connected to an impedance tuner 7 for the fundamental wave and an impedance tuner 8 for the second and third harmonics, and a frequency which is a distortion component generated by the high output transistor leaking into the input bias circuit 9. After passing the difference frequency between f1 and f2 through the low-pass filter 16, a part is distributed by the power divider 28 and connected to the network analyzer 21 to measure the phase and amplitude components. The phase and amplitude are adjusted by the phase shifter 22 and the variable attenuator 4 so that the characteristics of the high-output transistor have low distortion, high efficiency, and high output.

As described above, according to this embodiment,
As in the first embodiment, by changing the impedance of the transistor for the fundamental wave, harmonics, and low frequency components simultaneously and independently, low distortion, high efficiency,
An optimum input / output impedance for high output can be easily obtained.
The distortion component generated by the high-output transistor that leaks in is used as a low-frequency signal source, and the impedance thereof is used as a phase shifter 2.
2, the amplifier 23 and the variable attenuator 4 can be varied continuously and in a wide range, so that the measurement accuracy can be improved and the measurement range can be expanded, and the feedback circuit by the bias circuit has low distortion, high efficiency, and high output. Can be easily obtained by measurement.

Embodiment 3 FIG. 3 is a block diagram showing the configuration of the third embodiment of the present invention. 1 to 23 in the figure are the same as those in FIG. In this embodiment, the low-pass filter 1
6, the difference frequency component is separated from other signal components, then a part is distributed by a power divider 28, connected to a network analyzer 21, and the phase and amplitude components are measured thereby. The phase shifter 22 and the variable attenuator 4 increase the phase and amplitude of the output transistor.
In this configuration, the output is adjusted from the bias circuit 11 on the output side so that the output is adjusted so as to have high efficiency and high output. The other operations are the same as those in the first embodiment shown in FIG.

As described above, in this embodiment, the same effects as those of the above-described first embodiment can be obtained, and the distortion component generated by the high-output transistor separated from the output side can be reduced. The impedance can be varied continuously and in a wide range by the phase shifter 22, the amplifier 23 and the variable attenuator 4, so that the measurement range can be expanded, and the impedance of the distortion component leaking into the bias circuit 11 on the output side is low. The optimum input / output impedance for achieving high efficiency and high output can be easily obtained by measurement.

Embodiment 4 FIG. 4 shows the configuration of the fourth embodiment of the present invention. 1 to 28 in the figure are the same as those in FIG. In this embodiment, at the output of the measurement system, the difference frequency component is separated by the low-pass filter 16, further divided into two powers by the power divider 28, and each divided power is provided in two pairs. The amplifier 23, the variable attenuator 4, and the phase shifter 22 provide high-phase and low-amplitude transistors with low distortion, high efficiency,
The output is adjusted so as to have a high output, and one is injected from the bias circuit 9 on the input side, and the other is injected from the bias circuit 11 on the output side.

As described above, in this embodiment, the same effects as those of the first embodiment can be obtained, and further, as in the third embodiment, a high-output transistor included in the output component can be obtained. , The impedance of the low frequency distortion component can be continuously and widely varied by the phase shifter 22, the amplifier 23, and the variable attenuator 4, so that the measurement range can be expanded and the bias on the output side can be increased. As the impedance for the distortion component leaking into the circuit 11, the optimum input / output impedance for achieving low distortion, high efficiency, and high output can be easily obtained by measurement. Further, since a distortion component generated from the output side of the high-output transistor is used as a low-frequency signal source, when designing an amplifier, it can be easily realized as a circuit.

Embodiment 5 FIG. FIG. 5 shows the configuration of the fifth embodiment of the present invention. 1 to 23 in the figure are the same as those in FIGS. 1 and 2 described above, and thus description thereof will be omitted. The description of the operation of the same components as those in FIG. 1 is omitted. In this embodiment, an impedance tuner 17 composed of an active element is provided for a low-frequency distortion component leaking into the input bias circuit 9 and the output bias circuit 11.
And 18, and the output bias circuit 11
After passing through the low-pass filter 16 the difference frequency between the frequencies f1 and f2 leaking into the circuit, the amplifier 23, the variable attenuator 4 and the phase shifter 22 adjust the phase and amplitude of the high-output transistor to low distortion, high efficiency, and high efficiency. In this configuration, the output is adjusted so that the output is fed back to the input bias circuit 9.

According to this embodiment, the distortion component generated by the high-output transistor leaking into the output bias circuit 11 is used as a low-frequency signal source, and its impedance is used as the phase shifter 22, the amplifier 23, and the variable attenuator 4. Can be changed continuously and in a wide range, improving the measurement accuracy and expanding the measurement range, and as a feedback circuit with a bias circuit, it is easy to optimize the input and output impedance for low distortion, high efficiency, and high output. Can be determined by measurement.

Embodiment 6 FIG. FIG. 6 shows a configuration of the sixth embodiment of the present invention. 1 to 23 in the figure are the same as those in FIGS. This embodiment has a configuration in which the signal source 1 of the frequency f1 and the signal source 2 of the frequency f2 shown in FIG. 5 are replaced with a noise source 24, and the other configurations are exactly the same. Note that the present invention is not limited to this case, and the signal sources 1 and 2 shown in the other embodiments are not limited to this.
Can be similarly replaced with the noise source 24.

The operation will be described. The noise signal generated by the noise source 24 is adjusted by the variable attenuator 4 and input to the transistor 10 to be measured. The input side of the transistor 10 is connected to an impedance tuner 7 for the fundamental wave and an impedance tuner 8 for the second and third harmonics. After the low-frequency distortion component leaking into the output bias circuit 11 passes through the low-pass filter 16, the amplifier 23, the variable attenuator 4, and the phase shifter 22 adjust the phase and amplitude of the high-output transistor to low distortion. , High efficiency, high output, and feedback to the input bias circuit 9.

Also in this embodiment, similarly to the above-described fifth embodiment, a distortion component generated by a high-output transistor leaking into an output bias circuit 11 is used as a low-frequency signal source, and its impedance is set to a phase shifter. 22 and amplifier 2
3 and the variable attenuator 4 make it possible to vary continuously and in a wide range, so that the measurement accuracy can be improved and the measurement range can be expanded, and the feedback circuit by the bias circuit is optimal for low distortion, high efficiency, and high output. The input and output impedance can be easily obtained by measurement.

Embodiment 7 FIG. FIG. 7 shows a configuration of the seventh embodiment of the present invention. 1 to 23 in the figure are the same as those in FIG. The present embodiment is directed to the impedance tuner 1 including active elements for low frequencies of 0 to 1 GHz, which has been described in the first, third, fifth, and sixth embodiments.
This is a configuration in which 7 and 18 are replaced with impedance tuners 25 and 26 composed of passive elements.

In this embodiment, since the impedance tuner for the low frequency is constituted by a passive element, the impedance continuously used by the phase shifter, the amplifier and the variable attenuator used in the first to sixth embodiments is used. It is possible to operate more stably with respect to the variable configuration.

Embodiment 8 FIG. FIG. 8 shows an eighth embodiment of the present invention. 1 to 26 in the figure are the same as those in FIG. In the figure, the second harmonic, 3
This is a multiplier for generating harmonics of the harmonics. In the present embodiment, after the signals from the two input-side signal sources 1 and 2 are combined by the power combiner 3 and adjusted by the variable attenuator 4 in the measurement system shown in the above-described seventh embodiment, , Power is divided by a power divider 28, one of which is multiplied by a multiplier 27, and its phase and amplitude are reduced by an amplifier 23, a variable attenuator 4 and a phase shifter 22 so that the characteristics of a high-output transistor have low distortion and high efficiency. The power combiner 3 adjusts the output so as to have a high output, combines the signal wave of the other fundamental wave component with the power combiner 3, and inputs the resultant signal to the high output transistor.

As described above, in this embodiment,
A phase shifter that converts the impedance of the harmonic component to the fundamental wave,
Since the amplifier and the variable attenuator are configured to continuously and widely vary, the measurement can be performed with high accuracy and the measurement range can be expanded.

Embodiment 9 FIG. 9 shows a ninth embodiment. 1 to 26 in the figure are the same as in FIG. In the figure, reference numeral 29 denotes a high-pass filter for separating harmonic components. In this embodiment,
In the measurement system shown in the above-described seventh embodiment, the output power is separated into harmonic components by the directional coupler 6 and the high-pass filter 29, and the phase and amplitude are separated by the amplifier 23, the variable attenuator 4 and the phase shifter 22. The characteristics of the high output transistor have low distortion,
In this configuration, it is adjusted to achieve high efficiency and high output, and injection is performed from the output.

As described above, in this embodiment, the harmonic component is separated by the high-pass filter, and the impedance of the harmonic component is continuously and widely varied by the phase shifter, the amplifier, and the variable attenuator. Because it was
Measurement can be performed with high accuracy, and the measurement range can be expanded.

[0062]

According to the present invention, a signal generating step for generating a signal for performing a multicarrier amplifying operation, and a basic for adjusting the input / output impedance of a transistor with respect to a fundamental wave of the signal generated in the signal generating step. Wave impedance adjustment step, a harmonic component impedance adjustment step for adjusting the input / output impedance of the transistor with respect to the harmonic component of the signal generated in the signal generation step, and a low-frequency component of the signal generated in the signal generation step. A low-frequency component impedance adjustment step for adjusting the input / output impedance of the transistor, whereby the input / output impedance of the transistor for the fundamental wave, the harmonic component, and the low-frequency component is adjusted simultaneously and independently. , Low distortion, high efficiency, high output An effect that the optimum input and output impedances for becoming can be obtained by readily measured.

The signal generating step includes a first signal generating step of generating a signal of a first frequency, and a second signal generating step of generating a signal of a second frequency different from the first frequency. And a power combining step of combining the signal of the first frequency and the signal of the second frequency, so that the difference frequency can be used as a low-frequency signal source, and the multi-carrier amplification operation of the transistor can be performed. It is possible to easily find an optimum impedance for a low-frequency distortion component which is an intermodulation caused by the above.

Further, since the signal generating step includes a noise generating step of generating a noise signal, the input / output impedance of the transistor with respect to the fundamental wave, the harmonic component, and the low frequency component is utilized by using the noise signal as a signal source. Are adjusted simultaneously and independently, the optimum input / output impedance for achieving low distortion, high efficiency, and high output can be easily obtained by measurement.

Further, in the low frequency component impedance adjusting step, at least one of the input and output impedances is adjusted using an impedance tuner constituted by active elements for a low frequency of 0 to 1 GHz. The characteristics of the transistor can be easily adjusted to have low distortion, high efficiency, and high output.

In the low frequency component impedance adjustment step, at least one of the input and output impedances is adjusted using the impedance tuner constituted by the passive element, so that a stable operation can be performed. Stable adjustment can be performed so that the characteristics of the transistor have low distortion, high efficiency, and high output.

Also, in the fundamental wave impedance adjusting step, at least one of the input and output impedances is adjusted by using the impedance tuner constituted by the passive element, so that a stable operation can be performed, and This makes it possible to perform stable adjustment so that the characteristics described above have low distortion, high efficiency, and high output, and is also advantageous in terms of cost.

In the harmonic component impedance adjusting step, at least one of the input and output impedances is adjusted by using the impedance tuner constituted by the passive element, so that a stable operation can be performed. It is possible to stably adjust the characteristics of the transistor so as to have low distortion, high efficiency, and high output, and it is also advantageous in terms of cost.

The low frequency component impedance adjusting step includes an amplification step of amplifying the low frequency component, a phase shift adjusting step of adjusting the phase shift of the low frequency component, and an amplitude adjusting step of adjusting the amplitude of the low frequency component. , So that
Impedance for low frequency components can be continuously and widely varied with a phase shifter, amplifier and variable attenuator, improving measurement accuracy and expanding the measurement range, resulting in low distortion, high efficiency, and high output. Can be easily obtained by measurement.

In the low frequency component impedance adjusting step, the low frequency component leaking into the bias application terminal on the input side of the transistor is amplified in the amplifying step, and the phase shift and the amplitude are adjusted in the phase shift adjusting step and the amplitude adjusting step. hand,
Because it was injected into the bias application terminal on the output side,
Impedance for low frequency components can be continuously and widely varied with a phase shifter, amplifier and variable attenuator, improving measurement accuracy and expanding the measurement range, resulting in low distortion, high efficiency, and high output. Can be easily obtained by measurement.

In the low-frequency component impedance adjusting step, the low-frequency component included in the output component of the transistor is amplified by the amplifying step, and the phase shift and the amplitude are adjusted by the phase shift adjusting step and the amplitude adjusting step. Side, and the impedance for the low frequency component leaking into the bias application terminal on the input side of the transistor is adjusted by the impedance tuner composed of the active element for the low frequency of 0 to 1 GHz. Phase shifter for impedance to
The amplifier and variable attenuator can be varied continuously and over a wide range, improving the measurement accuracy and expanding the measurement range, and easily setting the optimum input / output impedance for low distortion, high efficiency, and high output. It can be determined by measurement.

In the low-frequency component impedance adjusting step, the low-frequency component included in the output component of the transistor is divided into two powers, and each of the distributed low-frequency components is amplified by the amplifying step, and the phase shift adjusting step and the amplitude are performed. By adjusting the phase shift and the amplitude in the adjustment step, one is injected into the bias application terminal on the output side, and the other is injected into the bias application terminal on the input side. The amplifier and variable attenuator can be varied continuously and over a wide range, improving the measurement accuracy and expanding the measurement range, and easily setting the optimum input / output impedance for low distortion, high efficiency, and high output. It can be determined by measurement.

In the low frequency component impedance adjusting step, the impedance for the low frequency component leaking into the bias application terminal on the input side and the bias application terminal on the output side of the transistor is changed to the impedance constituted by the active element for the low frequency of 0 to 1 GHz. Along with the adjustment by the tuner, the low-frequency component leaking into the bias application terminal on the output side of the transistor is amplified by the amplification process, and the phase shift and the amplitude are adjusted by the phase shift adjustment process and the phase shift adjustment process.
Since the bias is applied to the bias input terminal on the input side of the transistor, the impedance for low frequency components can be continuously and widely varied with a phase shifter, amplifier and variable attenuator, improving measurement accuracy and measuring The range can be expanded, and the optimum input / output impedance for achieving low distortion, high efficiency, and high output can be easily obtained by measurement.

Further, the harmonic component impedance step
Power distributing the signal generated in the signal generating step, multiplying one of the power-divided signals to generate a harmonic component, and amplifying the harmonic component to adjust phase shift and amplitude. And injecting the adjusted harmonic component into at least one of the input side and the output side of the transistor, so that the impedance with respect to the harmonic component is adjusted by a phase shifter, an amplifier, and a variable attenuator. It is possible to change continuously and in a wide range, improving the measurement accuracy and expanding the measurement range, low distortion, high efficiency,
The optimum input / output impedance for high output can be easily obtained by measurement.

Further, the harmonic component impedance step
The harmonic component contained in the output component of the transistor is amplified, the phase shift and the amplitude are adjusted, and the signal is injected into at least one of the output side and the input side of the transistor. , Amplifier and variable attenuator can be continuously and widely varied, improving the measurement accuracy and expanding the measurement range, and setting the optimal input / output impedance for low distortion, high efficiency, and high output. It can be easily obtained by measurement.

According to the present invention, there is provided a signal generating means for generating a signal for performing a multicarrier amplifying operation, and a fundamental wave impedance adjusting means for adjusting an input / output impedance of a transistor with respect to a fundamental wave of a signal generated by the signal generating means. Means, a harmonic component impedance adjusting means for adjusting the input / output impedance of the transistor with respect to the harmonic component of the signal generated by the signal generating means, and the input of the transistor to the low frequency component of the signal generated by the signal generating means. Low frequency component impedance adjusting means for adjusting the output impedance,
Since the input and output impedances of the transistor for the fundamental wave, harmonic components and low frequency components are adjusted simultaneously and independently, the optimum input and output for low distortion, high efficiency and high output are provided. There is an effect that the impedance can be easily obtained by measurement.

The signal generating means includes a first signal source for generating a signal of a first frequency, a second signal source for generating a signal of a second frequency different from the first frequency, Since a power combiner that combines the signal of one frequency and the signal of the second frequency is provided, the difference frequency can be used as a low-frequency signal source. An optimum impedance for a low-frequency distortion component which is generated intermodulation can be easily obtained.

Further, since the signal generating means has a noise source for generating a noise signal, the noise signal is used as a signal source, and the input and output impedances of the transistor with respect to a fundamental wave, a harmonic component and a low frequency component are reduced. Are adjusted simultaneously and independently, the optimum input / output impedance for achieving low distortion, high efficiency, and high output can be easily obtained by measurement.

Further, since the low-frequency component impedance adjusting means includes an impedance tuner constituted by an active element for a low frequency of 0 to 1 GHz, the characteristics of the high-output transistor are low distortion, high efficiency and high output. Can be easily adjusted.

Further, since the low frequency component impedance adjusting means includes the impedance tuner constituted by the passive element, stable operation can be performed, and the characteristics of the transistor become low distortion, high efficiency and high output. As described above, stable adjustment can be performed, and the cost is also advantageous.

Further, the fundamental wave impedance adjusting means includes:
Equipped with an impedance tuner composed of passive elements, stable operation can be performed, and stable adjustment can be performed so that transistor characteristics are low distortion, high efficiency, and high output, and cost is reduced. This is also advantageous.

Further, since the harmonic component impedance adjusting means includes the impedance tuner constituted by the passive element, stable operation can be performed, and the characteristics of the transistor are low distortion, high efficiency and high output. As described above, stable adjustment can be performed, and the cost is also advantageous.

The low frequency component impedance adjusting means includes an amplifier for amplifying the low frequency component, a phase shifter for adjusting the phase shift of the low frequency component, and a variable attenuator for adjusting the amplitude of the low frequency component. Because it is equipped, the impedance for low frequency components can be continuously and widely varied with a phase shifter, amplifier and variable attenuator, improving measurement accuracy and expanding the measurement range, low distortion, high efficiency, The optimum input / output impedance for high output can be easily obtained by measurement.

In the low frequency component impedance adjusting means, the low frequency component leaking into the bias application terminal on the input side of the transistor is amplified by an amplifier and the phase shift and the amplitude are adjusted by a phase shifter and a variable attenuator. Injection into the bias application terminal on the output side makes it possible to continuously and widely vary the impedance for low frequency components with a phase shifter, amplifier and variable attenuator, improving measurement accuracy and measuring range. The optimum input / output impedance for achieving low distortion, high efficiency, and high output can be easily obtained by measurement.

Further, the low frequency component impedance adjusting means includes an impedance tuner constituted by an active element for 0 to 1 GHz, and amplifies the low frequency component included in the output component of the transistor by an amplifier, and a phase shifter and a variable attenuator. Because the phase shift and the amplitude are adjusted by the above, the voltage is injected into the bias applying terminal on the output side of the transistor, and the impedance for the low frequency component leaking into the bias applying terminal on the input side of the transistor is adjusted by the impedance tuner. The impedance for low frequency components can be continuously and widely varied by the phase shifter, amplifier and variable attenuator, improving measurement accuracy and expanding the measurement range, resulting in low distortion, high efficiency and high output. To easily determine the optimal input / output impedance for Kill.

Further, the low frequency component impedance adjusting means reduces the low frequency component contained in the output component of the transistor by two.
A power divider for power distribution is further provided, and two pairs of an amplifier, a phase shifter, and a variable attenuator are provided, and each of the two power-divided low-frequency components is amplified by the amplifier, and the phase shifter and Adjusting the phase shift and amplitude with a variable attenuator, injecting one into the bias application terminal on the output side,
The other is injected into the bias input terminal on the input side, so that the impedance for low-frequency components can be continuously and widely varied with a phase shifter, amplifier and variable attenuator, improving measurement accuracy and measuring The range can be expanded, and the optimum input / output impedance for achieving low distortion, high efficiency, and high output can be easily obtained by measurement.

Further, the low frequency component impedance adjusting means includes an impedance tuner constituted by an active element for 0 to 1 GHz, and is provided for a low frequency component leaking into a bias application terminal on the input side and a bias application terminal on the output side of the transistor. The impedance is adjusted by the impedance tuner, and the low-frequency component leaking into the bias application terminal on the output side of the transistor is amplified by the amplifier, and the phase shift and the amplitude are adjusted by the phase shifter and the variable attenuator. Injection into the bias application terminal on the side allows impedance for low-frequency components to be continuously and widely variable with a phase shifter, amplifier and variable attenuator, improving measurement accuracy and expanding the measurement range Optimal entry and exit for low distortion, high efficiency and high output It can be determined in impedance measured easily.

Further, the harmonic component impedance means includes:
A power divider that distributes the power of the signal generated by the signal generator, a multiplier that generates a harmonic component by multiplying one of the power-divided signals, an amplifier that amplifies the harmonic component, and a harmonic component. And a variable attenuator that adjusts the amplitude of a harmonic component, and outputs the amplified harmonic component whose phase shift and amplitude have been adjusted to at least the input side and the output side of the transistor. Since it was injected into either one, the impedance for the harmonic components can be continuously and widely varied by the phase shifter, amplifier and variable attenuator, improving the measurement accuracy and expanding the measurement range, The optimum input / output impedance for achieving low distortion, high efficiency, and high output can be easily obtained by measurement.

Also, the harmonic component impedance means is
An amplifier that amplifies a harmonic component included in the output component of the transistor, a phase shifter that adjusts the phase shift of the harmonic component, and a variable attenuator that adjusts the amplitude of the harmonic component, are amplified by the amplifier. The harmonic component, whose phase and amplitude have been adjusted by the phase shifter and the variable attenuator, is injected into at least one of the output side and the input side of the transistor. , Amplifier and variable attenuator can be continuously and widely varied, improving the measurement accuracy and expanding the measurement range, and facilitating the optimal input / output impedance for low distortion, high efficiency, and high output. Can be determined by measurement.

[Brief description of the drawings]

FIG. 1 is a block diagram illustrating a method for measuring a distortion component of a transistor during a multicarrier operation according to Embodiment 1 of the present invention.

FIG. 2 is a block diagram illustrating a method for measuring a distortion component of a transistor during a multicarrier operation according to a second embodiment of the present invention.

FIG. 3 is a block diagram illustrating a method for measuring a distortion component of a transistor during a multicarrier operation according to a third embodiment of the present invention.

FIG. 4 is a block diagram illustrating a method for measuring a distortion component of a transistor during a multicarrier operation according to a fourth embodiment of the present invention.

FIG. 5 is a block diagram illustrating a method for measuring a distortion component of a transistor during a multicarrier operation according to a fifth embodiment of the present invention.

FIG. 6 is a block diagram illustrating a method for measuring a distortion component of a transistor during a multicarrier operation according to a sixth embodiment of the present invention.

FIG. 7 is a block diagram illustrating a method for measuring a distortion component of a transistor during a multicarrier operation according to a seventh embodiment of the present invention.

FIG. 8 is a block diagram illustrating a method for measuring a distortion component of a transistor during a multicarrier operation according to an eighth embodiment of the present invention.

FIG. 9 is a block diagram illustrating a method for measuring a distortion component of a transistor during a multicarrier operation according to a ninth embodiment of the present invention.

FIG. 10 is a block diagram showing a conventional measurement method.

FIG. 11 is a block diagram showing another conventional measurement method.

[Explanation of symbols]

1 signal source, 2 signal sources, 3 power combiner, 4 variable attenuator, 5 power sensor, 6 directional coupler, 7, 8,
12, 13, 17, 18, 25, 26 impedance tuner, 9, 11 bias circuit, 10 transistor, 15 spectrum analyzer, 16 low-pass filter, 21 network analyzer, 22 phase shifter,
23 amplifier, 24 noise source, 28 power divider,
29 High-pass filter.

Claims (28)

[Claims] A signal generating step of generating a signal for performing a multi-carrier amplifying operation; and a fundamental wave impedance adjustment for adjusting an input / output impedance of a transistor with respect to a fundamental wave of the signal generated in the signal generating step. A harmonic component impedance adjusting step for adjusting the input / output impedance of the transistor with respect to the harmonic component of the signal generated in the signal generating step; and a low frequency component of the signal generated in the signal generating step. A low-frequency component impedance adjustment step for adjusting the input / output impedance of the transistor with respect to, and by simultaneously and independently adjusting the input / output impedance of the transistor with respect to the fundamental wave, the harmonic component, and the low-frequency component, I / O for low distortion operation Distortion component measurement method of a transistor at the time of multi-carrier amplification operation and obtains the impedance. 2. The signal generating step includes: a first signal generating step of generating a signal of a first frequency; and a second signal generating step of generating a signal of a second frequency different from the first frequency. 2. A distortion component of a transistor during a multicarrier amplification operation according to claim 1, further comprising: a power combining step of combining the signal of the first frequency and the signal of the second frequency. Measuring method. 3. The method according to claim 1, wherein the signal generating step includes a noise generating step of generating a noise signal. 4. The method according to claim 1, wherein in the low frequency component impedance adjusting step, at least one of input and output impedances is adjusted using an impedance tuner configured by an active element for a low frequency of 0 to 1 GHz. Item 4. A method for measuring a distortion component of a transistor during a multicarrier amplification operation according to any one of Items 1 to 3. 5. The method according to claim 1, wherein in the low frequency component impedance adjusting step, at least one of input and output impedances is adjusted using an impedance tuner formed of a passive element. 3. The method for measuring a distortion component of a transistor during a multi-carrier amplification operation according to item 1. 6. The method according to claim 1, wherein in the fundamental wave impedance adjusting step, at least one of the input and output impedances is adjusted using an impedance tuner formed of a passive element. A method for measuring a distortion component of a transistor at the time of the multicarrier amplifying operation described above. 7. The method according to claim 1, wherein in the harmonic component impedance adjusting step, at least one of the input and output impedances is adjusted using an impedance tuner formed of a passive element. 3. The method for measuring a distortion component of a transistor during a multi-carrier amplification operation according to item 1. 8. The low frequency component impedance adjusting step includes: an amplification step of amplifying the low frequency component; a phase shift adjusting step of adjusting a phase shift of the low frequency component; and adjusting an amplitude of the low frequency component. 8. The method for measuring a distortion component during a multicarrier amplification operation according to claim 1, further comprising an amplitude adjusting step. 9. In the low frequency component impedance adjusting step, a low frequency component leaking into a bias application terminal on the input side of the transistor is amplified by the amplifying step, and the phase shift is performed by the phase shift adjusting step and the amplitude adjusting step. 9. The method according to claim 8, wherein the amplitude is adjusted and injected into a bias application terminal on the output side. 10. In the low frequency component impedance adjusting step, a low frequency component included in an output component of the transistor is amplified by the amplifying step, and the phase shift and the amplitude are adjusted by the phase shift adjusting step and the amplitude adjusting step. Then, while being injected into the output side of the transistor, the impedance for the low-frequency component leaking into the bias application terminal on the input side of the transistor is adjusted by an impedance tuner constituted by an active element for a low frequency of 0 to 1 GHz. 9. The method for measuring a distortion component during a multicarrier amplification operation according to claim 8, wherein 11. In the low-frequency component impedance adjusting step, the low-frequency component included in the output component of the transistor is divided into two powers, and each of the distributed low-frequency components is amplified by the amplifying step to adjust the phase shift. 9. The method according to claim 8, wherein the phase shift and the amplitude are adjusted by a step and the amplitude adjusting step, one of the phases is injected into a bias applying terminal on the output side, and the other is injected into a bias applying terminal on the input side. Method for measuring distortion component during multi-carrier amplification operation. 12. In the low frequency component impedance adjusting step, the impedance for the low frequency component leaking into the bias application terminal on the input side and the bias application terminal on the output side of the transistor is constituted by an active element for a low frequency of 0 to 1 GHz. The low frequency component leaking into the bias application terminal on the output side of the transistor is amplified by the amplification step, and the phase shift and the amplitude are performed by the phase shift adjustment step and the phase shift adjustment step. 9. The method of measuring a distortion component during a multi-carrier amplification operation according to claim 8, wherein the voltage is adjusted and injected into a bias application terminal on the input side of the transistor. 13. The harmonic component impedance step: a step of power-dividing the signal generated in the signal generating step; and a step of multiplying one of the power-divided signals to generate a harmonic component. Amplifying the harmonic component to adjust phase shift and amplitude; and injecting the adjusted harmonic component into at least one of the input side and the output side of the transistor. 4. The method for measuring a distortion component of a transistor during a multi-carrier amplification operation according to claim 1, wherein: 14. The high-frequency component impedance step includes: amplifying a high-frequency component included in an output component of the transistor, adjusting a phase shift and an amplitude, and injecting the amplified component into at least one of an output side and an input side of the transistor. 4. The method for measuring a distortion component of a transistor during a multi-carrier amplification operation according to claim 1, wherein: 15. A signal generating means for generating a signal for performing a multicarrier amplification operation, and a fundamental wave impedance adjustment for adjusting an input / output impedance of a transistor with respect to a fundamental wave of the signal generated by the signal generating means. Means, a harmonic component impedance adjusting means for adjusting input / output impedance of a transistor with respect to a harmonic component of the signal generated by the signal generating means, and a low frequency component of the signal generated by the signal generating means Low-frequency component impedance adjusting means for adjusting the input / output impedance of the transistor with respect to, and thereby, simultaneously and independently adjusting the input / output impedance of the transistor with respect to the fundamental and harmonic components and the low-frequency component, Ingress and egress for low distortion operation Distortion component measurement apparatus of the transistors of the multi-carrier amplification operation and obtains the impedance. 16. A signal generator comprising: a first signal source for generating a signal of a first frequency; and a second signal source for generating a signal of a second frequency different from the first frequency. The apparatus according to claim 15, further comprising: a power combiner that combines the signal of the first frequency and the signal of the second frequency. . 17. The apparatus according to claim 15, wherein said signal generation means includes a noise generation source for generating a noise signal. 18. The multi-frequency device according to claim 15, wherein said low-frequency component impedance adjusting means includes an impedance tuner comprising an active element for a low frequency of 0 to 1 GHz. Device for measuring distortion component of transistor during carrier amplification operation. 19. The transistor according to claim 15, wherein said low-frequency component impedance adjusting means includes an impedance tuner constituted by a passive element. Strain component measurement device. 20. The transistor distortion during multi-carrier amplification operation according to claim 15, wherein said fundamental wave impedance adjusting means comprises an impedance tuner constituted by a passive element. Component measuring device. 21. The transistor according to claim 15, wherein said harmonic component impedance adjusting means includes an impedance tuner constituted by a passive element. Strain component measurement device. 22. An amplifier for amplifying the low frequency component, an amplifier for amplifying the low frequency component, a phase shifter for adjusting a phase shift of the low frequency component, and a variable attenuation for adjusting an amplitude of the low frequency component. 22. The distortion component measuring apparatus according to claim 15, further comprising a device. 23. The low-frequency component impedance adjusting means, wherein the low-frequency component leaking into the bias application terminal on the input side of the transistor is amplified by the amplifier and phase-shifted and amplitude-controlled by the phase shifter and the variable attenuator. 23. The distortion component measuring device according to claim 22, wherein the voltage is adjusted and injected into a bias applying terminal on the output side. 24. The low-frequency component impedance adjusting means includes an impedance tuner composed of an active element for 0 to 1 GHz, wherein the low-frequency component contained in the output component of the transistor is amplified by the amplifier and the phase shifter and The variable attenuator adjusts the phase shift and the amplitude, injects the bias into the bias application terminal on the output side of the transistor, and adjusts the impedance to the low frequency component leaking into the bias application terminal on the input side of the transistor by the impedance tuner. 23. The distortion component measuring apparatus according to claim 22, wherein the distortion component is adjusted by: 25. The low-frequency component impedance adjusting means further includes a power divider for dividing the low-frequency component included in the output component of the transistor into two electric powers, and the amplifier, the phase shifter, and the variable attenuation. Two low frequency components, each of which is divided into two powers, are amplified by the amplifier, and the phase shifter and the amplitude are adjusted by the phase shifter and the variable attenuator. 23. The distortion component measuring apparatus according to claim 22, wherein the bias is applied to an output-side bias application terminal, and the other is applied to an input-side bias application terminal. 26. The low-frequency component impedance adjusting means includes an impedance tuner constituted by an active element for 0 to 1 GHz, and a low-frequency component leaking into a bias application terminal on the input side and a bias application terminal on the output side of the transistor. Is adjusted by the impedance tuner, and the low-frequency component leaking into the bias application terminal on the output side of the transistor is amplified by the amplifier, and the phase shift and the amplitude are adjusted by the phase shifter and the variable attenuator. 23. The distortion component measuring device at the time of a multicarrier amplification operation according to claim 22, wherein the device is adjusted and injected into a bias application terminal on the input side of the transistor. 27. A power divider for power-dividing the signal generated by the signal generator, wherein the harmonic component impedance means multiplies one of the power-divided signals to generate a harmonic component. A multiplier for amplifying the harmonic component, a phase shifter for adjusting the phase shift of the harmonic component, and a variable attenuator for adjusting the amplitude of the harmonic component. 19. The transistor according to claim 15, wherein the harmonic component whose phase and amplitude are adjusted is injected into at least one of an input side and an output side of the transistor. Measurement method of strain component. 28. An amplifier for amplifying a harmonic component included in an output component of a transistor, the harmonic component impedance means, a phase shifter for adjusting a phase shift of the harmonic component, and an amplitude of the harmonic component. A variable attenuator that adjusts the harmonic component that has been amplified by the amplifier and the phase shift and the amplitude have been adjusted by the phase shifter and the variable attenuator. 2. The method according to claim 1, wherein the material is injected into at least one of:
19. The method for measuring a distortion component of a transistor during a multicarrier amplification operation according to any one of 5 to 18.