JP2000315676A - Dry etching apparatus and method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a dry etching method which improves uniformity an etching rate, in a center part and peripheral part of a substrate and in all the peripheral parts thereof. SOLUTION: In a dry etching method, a gas of a prescribed flow rate is led from a gas supplier 2 to a vacuum vessel 1, while evacuating it by a vacuum pump 3 as an evacuating apparatus, and a prescribed pressure is held in the vacuum container 1, while when a high frequency power is supplied to a lower electrode 5 and a plasma source 7, a plasma is generated in the vacuum vessel 1, and a substrate 6 mounted in the lower electrode 5 can be etched. At this time, a ring 11 is mounted in the periphery of the substrate for processing.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to dry etching used for manufacturing electronic devices, and more particularly to a ring or plate for controlling the distribution of an etching rate in a plane.

[0002]

2. Description of the Related Art In dry etching using plasma, the inside of a vacuum vessel is evacuated while supplying gas to the inside of the vacuum vessel, and the inside of the vacuum vessel is controlled to a predetermined pressure while an electrode or a plasma source in the vacuum vessel is used. By supplying high-frequency power to both of them, plasma is generated in the vacuum vessel, and the substrate placed on the electrode in the vacuum vessel is processed.

At this time, the etching rate usually has a certain degree of variation in the substrate surface, and the peripheral portion of the substrate is generally larger than the central portion. The degree of this variation changes by changing various etching conditions such as the type of substrate to be processed, gas type, gas flow rate, process pressure, and high-frequency power. In some cases, changes in the absolute value of the etching rate, the etching shape, and the like may occur.

When the etching rate at the peripheral portion of the substrate is higher than that at the central portion, a ring having a constant height called a focus ring is set up so as to surround the periphery of the substrate at a uniform distance from the substrate. By controlling the inflow of the etchant and the outflow of gaseous reaction products in the peripheral portion of the substrate, the etching rate in the peripheral portion is reduced, and the etching rate difference between the central portion and the peripheral portion is reduced without changing the etching conditions. Had been reduced.

[0005]

However, with the advancement of electronic devices, the characteristics required in dry etching using plasma have become higher, and in particular, the in-plane variation of the etching rate has been reduced. There is a strong demand for improved uniformity. For this reason, it has become necessary not only to reduce the etching rate difference between the central portion and the peripheral portion of the substrate, but also to control the variation depending on the location in the peripheral portion. This tendency is more conspicuous than a circular substrate typified by a semiconductor, especially on a substrate such as a liquid crystal device whose periphery is constituted by a corner and a straight line, and the difference in the etching rate between the straight line and the corner is problematic. It is becoming. Further, the etching rate in the peripheral portion may differ depending on the shape of the vacuum vessel, the gas introduction method, and the gas exhaust method, but this occurs regardless of the shape of the substrate.

As described above, with the diversification of the etching process, the conventionally used focus ring cannot provide the required uniformity of the etching rate, and a processing method and apparatus suitable for each process are required. It has been demanded. An object of the present invention is to provide a dry etching apparatus and method capable of obtaining a uniform etching rate distribution over the entire surface of a substrate.

[0007]

According to the dry etching apparatus and method of the present invention, a ring or plate having an appropriate shape is disposed near a substrate to be subjected to an etching process to control the etching in the substrate surface. It is characterized by the following. According to the present invention, it is possible to reduce the variation in the amount of the etchant in the peripheral portion contributing to the etching and obtain a uniform etching rate distribution over the entire surface of the substrate.

[0008]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A dry etching apparatus according to a first aspect of the present invention is characterized in that a vacuum source is evacuated while supplying gas into the vacuum chamber, and a plasma source is controlled while controlling the inside of the vacuum chamber to a predetermined pressure. Alternatively, a plasma is generated by supplying high-frequency power to the electrodes in the vacuum vessel or both, and in a dry etching apparatus for processing a substrate placed on the electrodes in the vacuum vessel, surrounding the entire periphery of the substrate, It is characterized in that a ring whose height from the substrate surface is not uniform throughout the entire circumference is provided.

In a dry etching apparatus according to a second aspect of the present invention, in the first aspect, the ring is formed such that the difference between the highest portion and the lowest portion from the surface of the substrate is 10% of the height of the highest portion. % Or more. According to this configuration, the variation in the amount of the etchant can be reduced more remarkably.

According to a third aspect of the present invention, in the dry etching apparatus according to the first aspect, in the case where the substrate has a square shape or a corner portion, the ring also has a similar corner portion, and a portion corresponding to the corner portion is provided. The height of the ring is the highest. According to this configuration, it is possible to particularly reduce the amount of the etchant at the corner where the amount of the etchant is the largest.

A dry etching apparatus according to a fourth aspect of the present invention is characterized in that plates not surrounding the entire periphery of the substrate are arranged at several locations around the substrate. According to this configuration, it is possible to selectively reduce only the amount of the etchant in the portion where the amount of the etchant increases. In the dry etching apparatus according to the fifth aspect of the present invention,
In the case where the substrate has a square shape or a shape having a corner portion, a plate is provided at a portion corresponding to the corner.

According to this configuration, it is possible to selectively reduce only the amount of the etchant at the corner where the amount of the etchant usually increases. The dry etching apparatus according to claim 6, wherein a ring surrounding the substrate or a plate not surrounding the entire periphery of the substrate is provided at a position where the distance from the edge of the substrate in the normal direction is not uniform with respect to the entire periphery of the substrate. It is characterized by having.

According to this configuration, it is possible to reduce variations in the exhaust of gaseous reaction products generated by the etching process. At this time, the shape of the ring does not need to be two-dimensionally similar to the substrate. The dry etching apparatus according to claim 7 of the present invention is the dry etching apparatus according to claim 6, wherein the difference between the farthest part and the closest part of the ring or the plate from the edge of the substrate is 5 times the distance of the furthest part.
0% or more.

According to this configuration, the effect of remarkably reducing the variation in the exhaust of the gaseous reaction product can be obtained. In the dry etching method according to claim 8 of the present invention, the inside of the vacuum vessel is evacuated while supplying gas into the vacuum vessel, and while the inside of the vacuum vessel is controlled to a predetermined pressure, the electrode or the electrode in the plasma vessel or the vacuum vessel is controlled. Plasma is generated by supplying high-frequency power to both of them, and when dry etching is performed on a substrate placed on an electrode in a vacuum vessel, the entire periphery of the substrate is surrounded, and the height from the substrate surface is completely reduced. The dry etching process is performed by setting up a non-uniform ring throughout the periphery.

According to a ninth aspect of the present invention, in the dry etching method according to the eighth aspect, the difference between the highest part and the lowest part from the substrate surface is one of the heights of the highest part.
It is characterized in that a ring of 0% or more is set up and dry-etched. In a dry etching apparatus according to a tenth aspect of the present invention, in the eighth aspect, in the case where the substrate has a square shape or a corner portion, the ring having the highest portion corresponding to the corner is erected to form the dry etching device. Processing.

The dry etching method according to the eleventh aspect of the present invention is characterized in that a plate not surrounding the entire periphery of the substrate is placed at several locations around the substrate to perform the dry etching treatment. The dry etching method according to the twelfth aspect of the present invention is characterized in that, in the eleventh aspect, when the substrate has a form having a quadrangle or a corner portion, a dry etching process is performed by setting up a plate at a portion corresponding to the corner. I do.

In a dry etching method according to a thirteenth aspect of the present invention, the ring surrounding the substrate or the entire periphery of the substrate is located at a position where the distance from the edge of the substrate in the normal direction is not uniform around the entire periphery of the substrate. Is characterized by performing a dry etching process by setting up a plate not enclosing the plate. In a dry etching method according to a fourteenth aspect of the present invention, in the thirteenth aspect, the difference between the farthest part and the closest part of the ring or the plate from the edge of the substrate is 50% or more of the distance of the farthest part. It is characterized by the following.

The dry etching method according to claim 15 of the present invention uses the ring or plate formed of an insulator in claims 8 to 14. Hereinafter, embodiments of the present invention will be described with reference to the drawings. (Embodiment 1) FIGS. 1 to 4 show Embodiment 1 of the present invention.

As shown in FIG. 1, the etching apparatus exhausts gas by a vacuum pump 3 as an exhaust device while introducing a predetermined flow rate of gas from a gas supply device 2 into a vacuum vessel 1.
When high-frequency power is supplied to the lower electrode 5 and the plasma source 7 by the high-frequency power source 4 for the electrodes and the high-frequency power source 8 for the plasma source while maintaining the inside of the vacuum vessel 1 at a predetermined pressure, plasma is generated in the vacuum vessel 1 and An etching process can be performed on the substrate 6 placed on the electrode 5. At this time, the ring 11 was placed around the substrate 6 for processing. 9 is a dielectric plate.

More specifically, the gas is evacuated by the vacuum pump 3 while introducing a predetermined amount of Cl ² and BCl ³ gas from the gas supply device 2 into the vacuum vessel 1, and the inside of the vacuum vessel 1 is maintained at a predetermined pressure. When high-frequency power is supplied to the lower electrode 5 and the plasma source 7, plasma is generated in the vacuum vessel 1, and the substrate 6 of about 370 mm × 470 mm on which about 3000 Ａｌ of Al is deposited is placed on the lower electrode 5. Etching process.

At this time, the ring 11 placed around the substrate 6 surrounds the entire periphery of the substrate 6 as shown in FIG. 2, and the height from the surface of the substrate 6 is not uniform throughout the periphery. In the annular frame, the difference between the highest part and the lowest part from the surface of the substrate 6 is 10% of the height of the highest part.
That is all. When the substrate 6 has a quadrangular shape or a form having a corner portion, the ring 11 also has a similar corner portion, and the height of the ring corresponding to the corner is the highest.

The specific dimensions of the substrate 6 having a size of 370 mm × 470 mm are finished to the dimensions shown in FIGS. The unit of the dimension is millimeter. At this time, the etching rate distribution when the processing is performed using the conventional focus ring under the same conditions as the etching rate distribution of the processed substrate is shown below. The peripheral etching rate was measured at a position 15 mm from the edge of the substrate. FIG. 4A shows the result of the first embodiment, and FIG. 4B shows the result of the first embodiment.

As described above, according to the processing method of the present invention, the etching rate at the periphery of the substrate, particularly at the corner, was selectively suppressed with respect to that at the center, and a uniform etching rate distribution was obtained as a whole. Note that the same processing is performed for about 3
It was confirmed that similar good results could be obtained by performing the test on a substrate on which a film of Ｔｉ was formed.

(Embodiment 2) FIGS. 5 to 8 show Embodiment 2 of the present invention. As shown in FIG. 5, the etching apparatus exhausts gas by a vacuum pump 3 as an exhaust device while introducing a gas at a predetermined flow rate from a gas supply device 2 into the vacuum container 1 to maintain the inside of the vacuum container 1 at a predetermined pressure. While the lower electrode 5 and the plasma source 7 are connected to the high frequency power source 4 for the electrode,
When high-frequency power is supplied from the high-frequency power source 8 for plasma source, plasma is generated in the vacuum vessel 1, and the substrate 6 mounted on the lower electrode 5 can be etched. At this time, the processing was performed with the plate 12 placed around the substrate 6. 9 is a dielectric plate.

More specifically, the gas is evacuated by the vacuum pump 3 while introducing a predetermined amount of Cl ₂ and BCl ₃ gas from the gas supply device 2 into the vacuum vessel 1, and the inside of the vacuum vessel 1 is maintained at a predetermined pressure. When high-frequency power is supplied to the lower electrode 5 and the plasma source 7, plasma is generated in the vacuum vessel 1, and the substrate 6 of about 370 mm × 470 mm on which about 3000 Ａｌ of Al is deposited is placed on the lower electrode 5. Etching process.

At this time, the plates 12a to 12d placed on the periphery of the substrate 6 do not surround the entire periphery of the substrate 6 as shown in FIG. 6, and the substrate 6 has a square or a corner portion. In the case of showing the form, the plate 12 is provided at a portion corresponding to a corner of the substrate 6. The specific dimensions of the substrate 370 mm × 470 mm are finished as shown in FIGS. 7A to 7C. The unit of the dimension is millimeter.

At this time, the etching rate distribution when the processing is performed using the conventional focus ring under the same conditions as the etching rate distribution of the processed substrate is shown below.
The peripheral etching rate was measured at a position 15 mm from the edge of the substrate. When FIG. 8A is a conventional case, FIG.
Shows the result of the second embodiment. As described above, the etching rate of the corner portion was selectively suppressed without decreasing the etching rate of the linear portion around the substrate by the processing method of the present invention, and a uniform etching rate distribution was obtained as a whole.

Although the same treatment was performed on a substrate on which about 3000 ° of Ti was formed, it was confirmed that similar results were obtained. (Embodiment 3) FIGS. 9 to 11 show Embodiment 3 of the present invention.
Is shown. As shown in FIG. 19, the etching apparatus exhausts gas by a vacuum pump 3 serving as an exhaust device while introducing a gas at a predetermined flow rate from a gas supply device 2 into the vacuum container 1 to maintain the inside of the vacuum container 1 at a predetermined pressure. When high-frequency power is supplied to the lower electrode 5 and the plasma source 7 by the high-frequency power source 4 for electrodes and the high-frequency power source 8 for plasma sources,
Plasma is generated in the vacuum vessel 1, and the etching process can be performed on the substrate 6 mounted on the lower electrode 5.
At this time, the ring 13 was placed around the substrate 6 for processing. The height of the ring 13 from the surface of the substrate 6 is uniform over the entire circumference of the substrate 6. 9 is a dielectric plate.

More specifically, the gas is evacuated by the vacuum pump 3 while introducing a predetermined flow rate of Cl ₂ and BCl ₃ gas from the gas supply device 2 into the vacuum vessel 1, while maintaining the inside of the vacuum vessel 1 at a predetermined pressure. When high-frequency power is supplied to the lower electrode 5 and the plasma source 7, plasma is generated in the vacuum vessel 1, and the substrate 6 of about 370 mm × 470 mm on which about 3000 Ａｌ of Al is deposited is placed on the lower electrode 5. Etching process. The exhaust was performed in a form having an exhaust hole only in the direction of the orientation flat of the substrate.

At this time, the ring 13 placed around the substrate 6 has a shape surrounding the entire periphery of the substrate 6 as shown in FIG. 10, and is arranged at a distance of 5 mm from the substrate 6 on the exhaust hole side. On the opposite side, the etching was performed in a state where the size and the relative position with respect to the substrate 6 were set so as to be separated by 15 mm. The etching rate distribution of the substrate processed at this time and the etching rate distribution in the case of processing using a conventional focus ring are shown below. The peripheral etching rate was measured at a position 15 mm from the edge of the substrate. FIG. 11A shows the result of the third embodiment, and FIG. 11B shows the result of the third embodiment.

As described above, the etching rate on the exhaust hole side, which was conventionally high in etching rate, is selectively suppressed with respect to that on the opposite side, and a uniform etching rate distribution is obtained as a whole. Further, the difference between the portion of the ring 13 farthest from the end of the substrate 6 and 15 and the portion closest to 15 is 50% or more of the distance of the farthest portion. According to this configuration, the gas reaction product is more remarkable. The effect of reducing the variation of the exhaust gas can be obtained.

The same treatment was performed on a substrate on which a film of Ti was formed at a thickness of about 3000 °, and it was confirmed that similar results were obtained. This time, an example was shown in which the etching rate on the exhaust hole side was suppressed, but if the etching rate varies in a part or a plurality of parts of the peripheral part of the substrate other than the above, a uniform etching rate can be obtained in a similar manner for that part. It goes without saying that you can get it.

(Embodiment 4) FIGS. 12 and 13 show Embodiment 4 of the present invention. Using the same apparatus as in the third embodiment, a predetermined flow rate of Cl ₂ and HCI gas is introduced and WS
An etching process was performed on an 8-inch Si substrate 6 on which i was formed. The exhaust was performed in a form having an exhaust hole only on the side opposite to the notch of the substrate. The height of the ring 13 from the surface of the substrate 6 is uniform over the entire circumference of the substrate 6.

At this time, the ring 13 placed around the substrate 6 has a shape surrounding the entire periphery of the substrate 6 as shown in FIG. 12, and is arranged at a distance of 5 mm from the substrate 6 on the exhaust hole side. Etching was performed on the opposite side in a state where the size and the relative position with respect to the substrate 6 were set so as to be separated by 7 mm. The etching rate distribution of the substrate processed at this time and the etching rate distribution in the case of processing using a conventional focus ring are shown below. The peripheral etching rate was measured at a position 5 mm from the edge of the substrate. FIG. 13A shows the result of the fourth embodiment, and FIG. 13B shows the result of the fourth embodiment.

As described above, according to the processing method of the present invention, the etching rate on the exhaust hole side, which was conventionally high in etching rate, is selectively suppressed with respect to that on the opposite side, and a uniform etching rate distribution as a whole can be obtained. Was. In addition, this time, the exhaust system is only the condition of exhaust from one side, but it is needless to say that the same effect can be obtained with a different exhaust system.

Further, the difference between the part of the ring 13 farthest from the end of the substrate 6 and the part closest to 15 is 50% or more of the distance of the part farthest from the end. The effect of reducing the variation in the exhaust of the reaction product can be obtained. Although the same processing was performed on a substrate on which Al was formed, it was confirmed that similar results were obtained.

Although an example in which the etching rate on the exhaust hole side is suppressed has been shown this time, if the etching rate varies in a part or a plurality of peripheral portions of the substrate other than the above, the uniform method is applied to that portion in the same manner. It goes without saying that an etching rate can be obtained. In each of the above embodiments, the material of the ring and the plate is A
Although the base material subjected to hard alumite treatment is used in an electrically floating state, an insulator such as ceramic or alumina, or a metal such as stainless steel or Monel can be used.

In each of the above embodiments, plasma is generated in the vacuum vessel by supplying high-frequency power to both the plasma source and the electrodes in the vacuum vessel. However, the high-frequency power is supplied to the plasma source or the electrodes in the vacuum vessel. The same applies to a case in which plasma is generated in a vacuum vessel by supplying electric power. In the above (Embodiment 3) and (Embodiment 4), the height of the ring 13 from the surface of the substrate 6 is uniform over the entire circumference of the substrate 6, but as in (Embodiment 1), A ring in which the difference between the highest part and the lowest part from the surface of the substrate is 10% or more of the height of the highest part is arranged with the height of the ring corresponding to the corner of the substrate being the highest. In this case, the same effect can be expected.

(Embodiment 3) (Embodiment 4)
Although the case of the ring has been described, the plates 12a to 12d in (Embodiment 2) are provided at positions where the distance from the edge of the substrate to the normal direction is not uniform over the entire periphery of the substrate, and The same effect can be expected even when the difference between the farthest part and the closest part from the edge of the substrate is 50% or more of the distance of the farthest part.

[0040]

As described above, according to the present invention, a ring which surrounds the entire periphery of the substrate to be etched and whose height from the surface of the substrate is not uniform throughout the entire periphery, or a plate which does not surround the entire periphery of the substrate is formed. , And dry etching is performed, so that dry etching with good uniformity in the plane of the etching rate can be performed.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a dry etching apparatus according to a first embodiment of the present invention;

FIG. 2 is an external perspective view of the ring according to the embodiment.

FIG. 3 is a view showing the shape and dimensions of the ring according to the embodiment.

FIG. 4 is an etching rate distribution chart of a substrate processed according to the conventional example and the same embodiment.

FIG. 5 is a configuration diagram of a dry etching apparatus according to a second embodiment of the present invention.

FIG. 6 is an external perspective view of the plate of the embodiment.

FIG. 7 is a view showing a shape and an arrangement dimension of the plate according to the embodiment;

FIG. 8 is an etching rate distribution diagram of a substrate processed according to the conventional example and the same embodiment.

FIG. 9 is a configuration diagram of a dry etching apparatus according to a third embodiment of the present invention.

FIG. 10 is a plan view showing the arrangement of the ring and the substrate according to the embodiment.

FIG. 11 is an etching rate distribution diagram of a substrate processed according to the conventional example and the embodiment.

FIG. 12 is a plan view showing an arrangement of a ring and a substrate according to a fourth embodiment of the present invention.

FIG. 13 is an etching rate distribution diagram of a substrate processed according to the conventional example and the same embodiment.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Vacuum container 2 Gas supply unit 3 Vacuum pump 4 Electrode high frequency power supply 5 Lower electrode 6 Substrate 7 Plasma source coil 8 Plasma source high frequency power supply 9 Dielectric plate 11 Ring 12 Plate 13 Ring

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Yoshihiro Yanagi 1006 Kazuma Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. F term (reference) 5F004 AA01 BA20 BB11 BB18 BB23 BB28 BB29 BB30 BC08 DA04 DA11 DA29 DB08 DB09 DB16 DB17 EB02

Claims (15)

[Claims] 1. A high-frequency power is supplied to a plasma source and / or an electrode in a vacuum vessel while exhausting the inside of the vacuum vessel while supplying gas into the vacuum vessel and controlling the inside of the vacuum vessel to a predetermined pressure. In a dry etching apparatus that generates plasma by processing and processes a substrate placed on an electrode in a vacuum vessel, a ring that surrounds the entire periphery of the substrate and has a height from the substrate surface that is not uniform throughout the entire periphery is formed. Dry etching equipment provided. 2. The method according to claim 1, wherein the difference between the highest part and the lowest part from the surface of the substrate is 10% of the height of the highest part.
%. 3. The dry etching according to claim 1, wherein when the substrate has a square shape or a corner shape, the ring also has a similar corner portion, and the height of the ring corresponding to the corner is the highest. apparatus. 4. A high-frequency power is supplied to a plasma source and / or electrodes in a vacuum vessel while evacuating the vacuum vessel while supplying gas into the vacuum vessel and controlling the inside of the vacuum vessel to a predetermined pressure. A dry etching apparatus for generating a plasma thereby to process a substrate placed on an electrode in a vacuum vessel, wherein a plate not surrounding the entire periphery of the substrate is arranged at several places around the substrate. 5. The dry etching apparatus according to claim 4, wherein when the substrate has a shape having a square or a corner portion, a plate is provided at a portion corresponding to the corner. 6. A high-frequency power is supplied to a plasma source and / or an electrode in a vacuum vessel while evacuating the vacuum vessel while supplying gas into the vacuum vessel and controlling the inside of the vacuum vessel to a predetermined pressure. In a dry etching apparatus that generates plasma by this and processes a substrate placed on an electrode in a vacuum vessel, the distance from the edge of the substrate to the normal direction is not uniform around the entire periphery of the substrate. A dry etching apparatus provided with a ring surrounding the substrate or a plate not surrounding the entire periphery of the substrate. 7. The dry etching apparatus according to claim 6, wherein the difference between the farthest part and the closest part of the ring or plate from the edge of the substrate is 50% or more of the distance of the furthest part. . 8. A high-frequency power is supplied to a plasma source and / or electrodes in a vacuum vessel while exhausting the inside of the vacuum vessel while supplying gas into the vacuum vessel and controlling the inside of the vacuum vessel to a predetermined pressure. By generating plasma by this, when dry-etching the substrate placed on the electrode in the vacuum vessel, surrounding the entire periphery of the substrate, stand up a ring whose height from the substrate surface is not uniform throughout the entire periphery Dry etching method for dry etching. 9. The dry etching method according to claim 8, wherein a ring whose difference between the highest part and the lowest part from the substrate surface is at least 10% of the height of the highest part is set up and dry-etched. . 10. The dry etching method according to claim 8, wherein when the substrate has a form having a quadrangle or a corner portion, a ring having a height corresponding to the corner is set up and dry-etched. 11. A vacuum source is evacuated while supplying gas into the vacuum container, and the inside of the vacuum container is evacuated. While the inside of the vacuum container is controlled to a predetermined pressure, the plasma source or the electrode in the vacuum container or its electrode is controlled. Plasma is generated by supplying high-frequency power to both, and when dry etching processing is performed on the substrate placed on the electrodes in the vacuum vessel, plates that do not surround the entire periphery of the substrate are set up at several places around the substrate. Dry etching method to perform dry etching. 12. The dry etching method according to claim 11, wherein when the substrate has a form having a square or a corner portion, a plate is erected on a portion corresponding to the corner and dry etching is performed. 13. A vacuum vessel is evacuated while supplying gas into the vacuum vessel, and the inside of the vacuum vessel is controlled to a predetermined pressure.
When plasma is generated by supplying high-frequency power to the plasma source and / or the electrodes in the vacuum vessel, and the substrate placed on the electrodes in the vacuum vessel is subjected to dry etching, the normal from the edge of the substrate A dry etching method in which a ring that surrounds the substrate or a plate that does not surround the entire periphery of the substrate is placed upright at a position where the distance in the direction is not uniform with respect to the entire periphery of the substrate. 14. The difference between the farthest part and the closest part of the ring or plate from the edge of the substrate is at least 50% of the distance of the farthest part.
The dry etching method described. 15. The dry etching method according to claim 8, wherein a ring or a plate formed of an insulator is used.