JP2000313700A - Ii-vi semiconductor polycrystal and its production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a means having a high production yield without causing a composition deviation and uniformity in the production of a polycrystal raw material rod for growing II-VI semiconductor single crystal. SOLUTION: A polycrystal raw material rod useful for growing a single crystal by a zone melt method is produced in a slight composition deviation, high uniformity and a high yield by a method for producing a II-VI semiconductor polycrystal using a closed type quartz crucible in which the quartz crucible satisfies any of three conditions of (1) >=1,100 deg.C strain point, (2) <=30 ppm OH group content and (3) no clear absorption band is present in a 1.0-2.5 μm wave length range and in the vicinity of 2.7 μm in a light transmission spectrum.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an II-VI semiconductor single crystal used as a raw material rod for a magneto-optical element.
The present invention relates to a method for producing a group VI semiconductor polycrystal.

[0002]

2. Description of the Related Art Conventionally, a magneto-optical element which is transparent and exhibits a relatively large Faraday rotation angle in the visible light and near-infrared regions around a wavelength of 0.6 μm to 1.1 μm is grown by a zone melt method. II-VI semiconductor single crystals are known.

In the zone melt method, first, a polycrystal having almost the same composition as a single crystal to be grown as a raw material rod is prepared, a seed crystal is connected to one end thereof, and the raw material rod is partially heated near the seed crystal. This is a method of growing a single crystal rod by slowly moving the heating zone after melting. For that purpose, first, it is necessary to manufacture a raw material rod made of a polycrystal.

[0004] In the production of polycrystalline raw material rods with such mass production in mind, conventionally, an apparatus capable of obtaining high temperature and high pressure is used, and a solid crystal raw material is placed in an open container and placed in an inert gas atmosphere. In this case, a method of melting by heating and pressurizing, followed by rapid cooling has been adopted. As this form, the composition is _{(Cd 1-x-y Mn} x Hg y Te 1-z Se z)
(X, y, z are appropriate numerical values of 0 ≦ x, y, z ≦ 1), but are useful, but have a composition in which the vapor pressure of each element in the melting point temperature range is high. The case of body production will be described.

FIG. 4 is a schematic view showing one embodiment of a conventional production apparatus, and is a view showing the inside of an electric furnace for producing a polycrystalline raw material rod. Solid crystal raw material 4 in quartz crucible 42
1 and the solid crystal raw material 41 is melted by the heater 43, and then rapidly cooled by a method of controlling while reducing the calorific value of the heater 53. The upper part of the quartz crucible 42 is open, and the inside of the heat insulating material 45 is filled with an Ar gas 44 which is an inert gas.

As one form of the composition, a process of manufacturing a raw material rod of a polycrystalline material having the composition will be described. First, metal Cd, metal Mn,
A solid crystal raw material 41 weighing metal HgTe, metal Te, and metal Se is filled in a quartz crucible 42 in an open state.
These series of operations are performed in an Ar gas atmosphere so that the internal solid crystal raw material 41 is not oxidized.

In order to make the melting as uniform as possible, the quartz crucible 4 is placed at a position where the temperature distribution in the electric furnace is almost flat.
2 is installed. Along the temperature-pressure equilibrium vapor pressure curve of the compound having the above composition, the temperature is raised while adjusting so that a slightly excessive pressure of Ar gas 44 is applied. On the equilibrium vapor pressure curve, the furnace temperature is about 1070 ° C. and the pressure of Ar gas 44 is about 15
When the temperature-pressure condition of MPa is reached, the solid crystal raw material 41 is completely melted while maintaining the condition.

After the solid crystal raw material 41 is completely melted, it is rapidly cooled to grow polycrystals.
Of the temperature-pressure equilibrium vapor pressure curve so as not to largely deviate from the above-mentioned temperature-pressure equilibrium vapor pressure curve. Cooling rate is 1
It is necessary to keep about 5 ° C per minute.

On the other hand, as a method for producing a polycrystal, there is a method using a sealed quartz crucible instead of the method using the above-mentioned open container. First, the solid crystal raw material is vacuum-sealed in a quartz crucible. The temperature is raised along the temperature-pressure equilibrium vapor pressure curve of the solid crystal raw material. An inert gas such as Ar gas is added to the furnace, and the quartz crucible is heated while the internal and external pressures of the quartz crucible are almost equal to completely melt the solid crystal raw material, and then rapidly cooled to obtain a polycrystalline material. A certain raw material rod is manufactured. The cooling rate is the same as when using an open container.

FIG. 5 is a schematic view showing the inside of an electric furnace for producing a raw material rod of polycrystalline material when a sealed quartz crucible is used. Solid crystal raw material 5 in quartz crucible 52
1 and vacuum-encapsulated, the temperature is raised by a heater 53 so as to follow a temperature-pressure equilibrium vapor pressure curve of the solid crystal raw material, and the solid crystal raw material 51 is melted.
3. Rapid cooling is performed by a method of controlling while reducing the calorific value. The inside of the heat retaining material 65 is filled with an Ar gas 54 which is an inert gas. Solid crystal raw material 51 into quartz crucible 52
Is performed in a vacuum, and the temperature of the quartz crucible 52 is increased.
At the time of cooling, it is necessary to control the pressure condition of the Ar gas 54 so that the pressures inside and outside the crucible are almost always equal.

[0011]

SUMMARY OF THE INVENTION
In the polycrystalline manufacturing method using an open container, melting
Hg gas equivalent to equilibrium vapor pressure from liquid is unlimited in space
Evaporates and the resulting polycrystalline body
Indicates that the Hg content was far from the target composition
There was a disadvantage of becoming. Moreover, the produced knot
The composition of the crystal is non-uniform and H
g composition changed greatly. Especially (Cd _1-xy
Mn_xHg_yTe_1-zSe_z) (X, y, z are 0 ≦
x, y, z ≤ 1)
Of raw material rod of polycrystalline material with high vapor pressure of each element
The case is remarkable.

When a single crystal rod is grown by the zone melt method using such a polycrystalline raw material rod, the following problems occur. The above (Cd _1-xy Mn _x H)
g _y Te _1-z Se _z ) (x, y, z are 0 ≦ x, y, z
When a raw material rod having a composition of ≦ 1 (appropriate numerical value of ≦ 1) is used, since the change in Hg composition in the longitudinal direction in the raw material rod is large, the heating range of the raw material rod is raised to a certain temperature for melting. However, the melting amount changes depending on the position in the raw material rod, and the conditions change sequentially during the growth of the single crystal.

In the worst case, the raw material rod does not melt at the set temperature, and the polycrystalline charge stops.
A phenomenon occurs in which the growth of the single crystal is stopped halfway.

As described above, when a polycrystalline raw material rod is manufactured using a conventional open container, a polycrystalline raw material rod for growing a II-VI group semiconductor single crystal by a zone melt method is required. Could not achieve uniform composition. this is,
_{(Cd 1-x-y Mn} x Hg y Te 1-z Se z)
(X, y, z are appropriate numerical values of 0 ≦ x, y, z ≦ 1), and the like is particularly remarkable in the case of a composition having a high vapor pressure of each element in the melting point temperature range.

The light absorption characteristics of a single crystal grown by the zone melt method tend to greatly depend on the purity of the raw material rod used. In a conventional method of manufacturing a raw material rod using an open container, metal components contained in a furnace material such as a heater and a heat insulating material in an electric furnace are easily mixed from a surface of a melt of a solid crystal raw material in a manufacturing process. The raw material rods are taken in as impurities. Therefore, the manufactured raw material rods
It did not satisfy the required high purity (99.9999%). A group II-VI semiconductor single crystal grown by the zone melt method using such a raw material rod cannot satisfy the level of light transmission loss required when used as a component of an optical device such as an optical isolator. There is a problem.

On the other hand, in the case of using a sealed quartz crucible instead of an open container, it has been found that there is almost no change in the Hg composition in the longitudinal direction in the manufactured raw material rod. However, when the pressure reaches about 15 MPa at 1040 ° C. or higher, which is a temperature rising condition, or at around 700 ° C. during rapid cooling, a phenomenon in which the quartz crucible ruptures is often observed, and the production yield of the target raw material rod is reduced. The problem of becoming very low occurred. Although it depends on the composition of the raw material rod, for complete melting of the solid crystal raw material, generally,
Quartz crucible must be heated above 1040 ° C,
There is a problem that a method of lowering the maximum temperature of the heating or a method of avoiding rapid cooling cannot be selected because the quality of the raw material rod to be manufactured is deteriorated.

Accordingly, the present invention provides a method for producing a polycrystalline raw material rod used for growing a group II-VI semiconductor single crystal by a zone melt method with high quality and high yield. In addition, this manufacturing method is (Cd
_{1-x-y Mn x Hg} y Te 1-z Se z) (x, y,
(z is an appropriate numerical value of 0 ≦ x, y, z ≦ 1) and the like, and it can be carried out without any problem even for a polycrystalline raw material rod having a composition in which the vapor pressure of each element in the melting point temperature range is high. it can.

[0018]

Means for Solving the Problems In the present invention, first,
The solid crystal material is placed in a quartz crucible and sealed under vacuum. Next, raise the temperature of the quartz crucible to completely melt the solid crystal raw material,
Then, the raw material rod which is a polycrystal is manufactured by quenching. At that time, the temperature is raised or lowered along the temperature-pressure equilibrium vapor pressure curve of the solid crystal raw material to be produced. Further, the inside of the electric furnace is filled with an inert gas, and the pressure is constantly adjusted to an appropriate pressure corresponding to the internal pressure of the quartz crucible. Ar gas has been used as an inert gas, and it has been confirmed that no problem occurs when Ar gas is used.

Further, as for the quartz crucible used for producing the raw material rod of polycrystalline material, only a material having any of the following characteristics is used. (A) The strain point temperature of the quartz crucible used is 1100 ° C. or higher. (B) The OH content of the quartz crucible used is OH ≦ 30p
pm. (C) In the light transmission spectrum of the quartz crucible used, there is no significant absorption in a wavelength range of 1.0 to 2.5 μm.

The above conditions are based on experimentally found results of factors causing the quartz crucible to burst in the step of raising the temperature of the quartz crucible to a temperature of 1040 ° C. or higher and the subsequent rapid cooling step. That is, depending on the material of the quartz crucible to be used, the thermophysical properties (viscosity) tend to greatly decrease at around 1040 ° C., and thus the durability to pressure decreases due to the decrease in thermophysical properties. Has been found to significantly decrease the margin of the image. This is considered to be the main cause of the rupture of the quartz crucible, which often occurs at around 700 ° C. during rapid cooling, in addition to the cause of the rupture of the quartz crucible when the temperature is raised to 1040 ° C. or more.

By selecting a quartz crucible made of a material that does not cause a decrease in thermophysical properties in the temperature range around 1040 ° C. and above, it is possible to prevent the crucible from bursting at the time of temperature rise or rapid cooling. . The conditions for selecting such a crucible material were the above three conditions (a), (b), and (c).
It has been found that if at least one of these conditions is satisfied, the quartz crucible hardly bursts during the production of the raw material rod.

Further, conventionally, in particular problems have occurred remarkably _{(Cd 1-x-y Mn} x Hg y Te 1-z Se z)
(X, y, z are appropriate numerical values of 0 ≦ x, y, z ≦ 1) and the like, and the raw material rod of a polycrystalline material having a high vapor pressure of each element in the melting point temperature range is also used. It has been found that the rupture of the quartz crucible can be prevented if the conditions are satisfied.

According to the above method, the composition is excellent in uniformity, the Hg composition in the raw material rod is hardly changed in the longitudinal direction, and any one of the above (a), (b) and (c) is obtained. By selecting a quartz crucible of a material that satisfies these conditions, a polycrystalline raw material rod for growing a II-VI group semiconductor single crystal is
A method for producing a group II-VI semiconductor polycrystal mass-produced at a high yield can be obtained.

That is, according to the present invention, a solid raw material having a predetermined composition is vacuum-sealed in a quartz crucible, the solid raw material is melted by applying temperature and pressure to the quartz crucible, and then quenched to form a group II-VI. In a method for producing a semiconductor polycrystal,
A method for producing a group II-VI semiconductor polycrystal, wherein a crucible having a strain point temperature of 1100 ° C. or more is used as the quartz crucible.

Further, according to the present invention, a solid raw material having a predetermined composition is vacuum-sealed in a quartz crucible, and the solid raw material is melted by applying temperature and pressure to the quartz crucible, and then rapidly cooled to form a group II-VI. In a method for producing a semiconductor polycrystal,
A method for producing a II-VI group semiconductor polycrystal using a crucible having an OH group content of 30 ppm or less as the quartz crucible.

Further, according to the present invention, a solid raw material having a predetermined composition is vacuum-sealed in a quartz crucible, the solid raw material is melted by applying temperature and pressure to the quartz crucible, and then quenched to form a II-VI group material. In a method for producing a semiconductor polycrystal,
As the quartz crucible, a crucible having no clear absorption band in the wavelength range of 1.0 to 2.5 μm in the light transmission spectrum or having no absorption band in the vicinity of the wavelength of 2.7 μm where the transmittance is reduced by 5% or more from the surroundings is used. This is a method for producing a II-VI semiconductor polycrystal.

Further, the present invention provides a method for producing a II-VI semiconductor single crystal grown by a zone melt method, wherein the II-VI semiconductor polycrystal produced by the method for producing a II-VI semiconductor polycrystal is used. It is a II-VI group semiconductor polycrystal as a raw material.

Also, in the present invention, the II-VI group semiconductor polycrystal comprises at least one or more of elements Cd, Mn, Hg and Zn, and at least one or more of Te and Se.
It is a II-VI semiconductor polycrystal.

The present invention also provides a method of growing a group II-VI semiconductor single crystal by a zone melt method using the group II-VI semiconductor polycrystal produced by the method for producing a group II-VI semiconductor polycrystal. This is a method for manufacturing a magneto-optical element.

[0030]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a view schematically showing the inside of an electric furnace according to an embodiment of the present invention, and shows an electric furnace for producing a polycrystalline raw material rod using a sealed quartz crucible. . Composition _{(Cd 1-x-y Mn} x Hg y Te
_When manufacturing a raw material rod having a composition in which the vapor pressure of each element in the melting point temperature range is high, such as _1-z Se _z ) (x, y, z are appropriate numerical values of 0 ≦ x, y, z ≦ 1). With that in mind.

As an example of the present invention, the composition (Cd _0.60
Mn _0.24 Hg _0.16 Te _{0. 98} Se _0.02 )
The production process for producing a polycrystalline raw material rod of a II-VI semiconductor, which is described below, will be described below.

The solid crystal raw material 11 in FIG.
d, metal Mn, metal HgTe, metal Te, and metal Se were weighed so as to have a target composition ratio.
After filling in 2, vacuum sealing is performed. In the example shown in FIG.
The quartz crucible 12 has a configuration in which two types of members, large and small, each having a U-shaped cross section are combined.
Vacuum encapsulation is performed by heating and fusing while keeping the inside vacuum.

In order to melt the solid crystal raw material 11 as uniformly as possible, the quartz crucible 12 is arranged at a position where the temperature distribution in the electric furnace is almost flat. And Ar gas 14
While the furnace was being introduced into the electric furnace, the furnace temperature was increased to about 1070.
° C, the pressure of the Ar gas 14 in the furnace is about 15 MPa-
Melts while holding under pressure conditions. After that, it is rapidly cooled by a method of controlling while reducing the calorific value of the heater 13, and the crystal is grown to obtain a polycrystal. During this time, the temperature is raised or lowered along the temperature-pressure equilibrium vapor pressure curve of the solid crystal raw material 11, and Ar gas 14 is introduced into the electric furnace so that the difference between the internal and external pressures of the quartz crucible 12 is reduced. Is controlled somewhat higher. The cooling temperature during cooling is about 5 ° C. per minute as in the conventional technology. The difference between the embodiment of the manufacturing method according to the prior art shown in FIG. 6 and the embodiment of the present invention is that the material of the quartz crucible used is different.

In the manufacturing process of the raw material rod of the polycrystalline material described above, since the solid crystal raw material 11 is always sealed in the quartz crucible 12, it is derived from the components of the electric furnace such as the heater 13 and the heat insulating material 15. The entry of impurity metals is prevented. Therefore, there is no concern that contamination and oxidation due to external conditions may occur at all during a series of manufacturing steps, and it is possible to achieve the condition of purity 99.9999% required for the polycrystalline raw material rod.

As described above, when the temperature of the quartz crucible 12 is raised or cooled, the Ar gas 14 at a pressure slightly higher than the temperature-pressure equilibrium vapor pressure curve of the solid crystal raw material 11 is introduced while the temperature is increased. Cool down. This is because quartz crucibles are generally easily broken when the internal pressure is higher than the external pressure, but are relatively hard to break when the external pressure is higher than the internal pressure. Depends on the nature.

At the time of this temperature rise, Hg gas corresponding to the equilibrium vapor pressure is discharged into the space inside the quartz crucible 12. However, since the space in the quartz crucible has a finite volume, the amount of Hg evaporating from the solid crystal raw material 11 can be predicted. Therefore, it can be dealt with by correcting the element ratio of the solid crystal raw material 11 in advance. It is. For this reason, the problem that the composition greatly deviates from the target composition or that a polycrystal having a non-uniform composition is produced is solved.

The group II-VI semiconductor single crystal grown by the zone melt method using a polycrystalline raw material rod manufactured by the manufacturing method of the present invention described above is used as an element for an optical device such as an optical isolator. The optical characteristics required when used as a liquid crystal were sufficiently satisfied in light transmission loss.

Table 1 shows a comparison of the properties of the sealed quartz crucible described as the prior art and the quartz crucible described in the embodiment of the present invention. Table 1 includes data on optical characteristics.

[0040]

[Table 1]

It can be seen from Table 1 that the quartz crucible used in the conventional method and the quartz crucible used in the present invention have different raw materials and synthesis methods. The measurable differences that can distinguish the two crucibles are the temperature of the strain point, O
It can be seen that there are three points: the concentration of the H group, the presence or absence and the intensity of the infrared absorption band in the 2.2 μm or 2.7 μm band.

FIG. 2 is a graph showing changes in thermophysical properties (viscosity) of both quartz crucibles with temperature. Further, FIG. 3 is a diagram showing a spectrum of the light transmittance of a quartz crucible which is sealed and used in a conventional technique and the quartz crucible according to the embodiment of the present invention.

In a quartz crucible conventionally used in the production of polycrystalline raw material rods, the thermophysical properties (viscosity) greatly change at 1040 ° C. or higher, and the pressure resistance against a pressure difference rapidly decreases at the same temperature or higher. Based on the above experimental fact, the present invention has studied the selection of a quartz crucible made of a material having better viscosity characteristics. As a result, the found quartz material had a strain point temperature in the range of 1100 ° C to 1130 ° C.

The higher the strain point temperature is, the better the viscosity change at higher temperature is eliminated. At present, commercially available quartz crucibles generally have a maximum temperature of 1130 ° C.
It is about. The difference in thermophysical properties (viscosity) depending on the material of the quartz crucible is as shown in FIG. The quartz crucible having a high strain point temperature described in the embodiment of the present invention has a capacity of 1000
It is understood that the thermophysical properties (viscosity) are more excellent in the range of -1100 ° C.

The OH group content is also considered to be a value related to the thermophysical properties (viscosity) of quartz glass, and the lower the lower, the higher the strain point temperature. In quartz synthesized by oxyhydrogen flame melting, some OH groups are inevitably mixed during synthesis. It has been empirically found that if the OH group content is in the range of 30 ppm or less, the strain point temperature will be 1100 ° C. or more. Therefore, a crucible made of such a quartz material may be selected. Generally, in the synthesis by a heating melting method or an arc plasma method in an electric furnace, there is almost no possibility that OH groups are mixed, so that quartz having a sufficiently low OH group content can be synthesized.

FIG. 3 is a diagram showing the spectrum of the light transmittance of a quartz crucible used in a sealed state according to the embodiment of the present invention and the conventional technique. The difference between the two is 2.2 μm
And the presence or absence of a light absorption band near 2.7 μm.
In the quartz crucible according to the prior art, a small absorption band is found around 2.2 μm and a clear large absorption band is found around 2.7 μm. In the quartz crucible used in the embodiment of the present invention,
At around 2.2 μm, only a very small absorption band is observed at around 2.7 μm. In claim 3, the condition of the spectrum of the light transmittance is 1.0-2.
If there is no clear absorption band in the range of 5 μm or the wavelength is 2.7 μm
It is described that a crucible having no absorption band in which the transmittance is reduced by 5% or more from the surrounding area is used.

Table 2 shows a comparison of the production yield between the present invention and the conventional method using a sealed crucible.

[0048]

[Table 2]

From Table 2, it can be seen that the quartz crucible described in the embodiment of the present invention is used in place of the sealed quartz crucible of the material described as the prior art, thereby producing a raw material rod of a polycrystalline body. It can be seen that the yield was significantly improved from 3% to 100%.

When manufactured by a conventional manufacturing method using an open type quartz crucible, the crucible does not rupture, so that the success rate of the manufacturing process is high. However, the produced polycrystalline raw material rod is not suitable for growing a II-VI group semiconductor single crystal due to a compositional deviation, non-uniformity, and mixing of impurities. The polycrystalline body produced by the production method of the present invention has a low compositional deviation and non-uniformity, and also has a high impurity content in terms of II-VI.
It has a sufficient quality as a raw material rod for a group III semiconductor single crystal.

As described above, a material suitable for a quartz crucible that is sealed and used in the production of a raw material rod of a polycrystalline material is as follows:
The determination can be made based on the value of the strain point temperature, the content of the OH group, the presence or absence of an infrared absorption band around 2.2 μm and around 2.7 μm. In the above index, when the strain point temperature is 1100 ° C. or more, the OH group content is 30 ppm or less, and if any of the conditions in which two infrared absorption bands are hardly observed is found, the viscosity of the quartz crucible is sufficiently high. It is assured that the material is high and has no risk of bursting during the production of the raw material rod.

[0052]

As described above, according to the present invention,
A polycrystalline raw material rod used for growing a II-VI semiconductor single crystal can be manufactured with high yield as a product having high purity and excellent composition uniformity. If the polycrystalline raw material rod produced by this method is grown by the zone melt method, an excitation light source for an optical amplifier (0.98-1.064 μm) is obtained.
Band) and LD-excited SHG light source (0.83-0.86 μm)
It is possible to manufacture a group II-VI semiconductor single crystal excellent as a magneto-optical element, which is used as a Faraday rotator for an optical isolator for a band). In addition, the composition (Cd
_{1-x-y Mn x Hg} y Te 1-z Se z) (x, y,
(z is an appropriate numerical value of 0 ≦ x, y, z ≦ 1), and a high yield that can cope with the production of a polycrystalline raw material rod having a composition in which the vapor pressure of each element is high in the melting point temperature range. A manufacturing method that can be mass-produced can be provided.

[Brief description of the drawings]

FIG. 1 is a schematic view of the inside of an electric furnace for producing a raw material rod of a polycrystalline body according to an embodiment of the present invention.

FIG. 2 is a graph showing a change in thermophysical properties (viscosity) of a quartz crucible used in the present invention and a thermostatic property (viscosity) of a quartz crucible used in a sealed state according to a conventional technique with temperature.

FIG. 3 is a graph showing a spectrum of light transmittance of a quartz crucible used in the present invention and a quartz crucible used in a sealed state in a conventional technique.

FIG. 4 is a schematic view of the inside of an electric furnace for producing a polycrystalline raw material rod when an open quartz crucible according to a conventional technique is used.

FIG. 5 is a schematic view of the inside of an electric furnace for producing a polycrystalline raw material rod when a sealed quartz crucible according to the prior art is used.

[Explanation of symbols]

 11, 41, 51 Solid crystal raw material 12, 42, 52 Quartz crucible 13, 43, 53 Heater 14, 44, 54 Ar gas 15, 45, 55 Heat insulator

Claims (6)

[Claims] 1. A solid material having a predetermined composition is vacuum-sealed in a quartz crucible, the solid material is melted by applying a temperature and a pressure to the quartz crucible, and then rapidly cooled to obtain a II-VI group semiconductor polycrystal. A method for producing a II-VI group semiconductor polycrystal, wherein a crucible having a strain point temperature of 1100 ° C. or more is used as the quartz crucible. 2. A solid material having a predetermined composition is vacuum-sealed in a quartz crucible, a temperature and a pressure are applied to the quartz crucible to melt the solid material, and then quenched to obtain a II-VI group semiconductor polycrystal. A method for producing a II-VI group semiconductor polycrystal, characterized in that a crucible having an OH group content of 30 ppm or less is used as the quartz crucible. 3. A solid raw material having a predetermined composition is vacuum-sealed in a quartz crucible, and the solid raw material is melted by applying temperature and pressure to the quartz crucible, and then rapidly cooled to obtain a II-VI group semiconductor polycrystal. Wherein the quartz crucible has no clear absorption band in the wavelength range of 1.0 to 2.5 μm in the light transmission spectrum or has a wavelength of 2.7 μm.
A method for producing a group II-VI semiconductor polycrystal, characterized by using a crucible having no absorption band whose transmittance is lower by 5% or more than its surroundings in the vicinity of m. 4. II- according to any one of claims 1 to 3
II-VI produced by a method for producing a group VI semiconductor polycrystal
II-group semiconductor polycrystal grown by zone melt method II-
II-VI characterized by being a raw material of a group VI semiconductor single crystal
Group III semiconductor polycrystal. 5. The method according to claim 1, wherein the II-VI group semiconductor polycrystal is an element C
d, Mn, Hg, at least one of Zn, and T
5. The II-VI group semiconductor polycrystal according to claim 4, comprising at least one of e and Se. 6. II- according to any one of claims 1 to 3
II-VI produced by a method for producing a group VI semiconductor polycrystal
A method for producing a magneto-optical element, comprising growing a group II-VI semiconductor single crystal by a zone melt method using a group III semiconductor polycrystal.