JP2000311982A - Semiconductor device, semiconductor module and method of manufacturing them - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a semiconductor device and a semiconductor module which are small in size, high in element mounting efficiency, and capable of reducing wirings between element to nearly zero in length and a method of manufacturing them. SOLUTION: In this semiconductor device, a through-hole is bored in the center of an electrode pad 2a formed on the element region forming surface (front surface) of a semiconductor element board 1. A passivation film 4 (surface protective film) and an insulating resin film 5 of polyimide or the like are each formed on the front and rear of the semiconductor element board 1, and a rear electrode pad 2b is formed around the opening of the through-hole 3 on the rear insulating resin film 5, an intermediate insulating layer 6 is provided on the inner circumferential surface of the through-hole 3, and a conductive layer 7 is filled in the through-hole 3 inside the insulating layer 6. Conductive coating layers 8a and 8b are each formed on both the ends of the conductive layer 7, bringing the electrodes 2a and 2b respectively, and the conductive layer 7 is electrically connected to the electrodes pads 2a and 2b through the intermediary of the layers 8a and 8b respectively.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, a semiconductor module, and a method of manufacturing the same,
The present invention relates to a semiconductor device and a semiconductor module which are applied to a memory device and a memory module which are required to be reduced in size and cost, and to a method of manufacturing the device or the module.

[0002]

2. Description of the Related Art Conventionally, as a semiconductor module in which a plurality of semiconductor elements are integrated, as shown in FIG.
It is known that a plurality of semiconductor packages 21 having leads in two directions, such as a (Small Outline Package), are mounted side by side on a single mounting board (for example, a printed wiring board) 22 and connected. Have been.

As a stacked module in which semiconductor elements are stacked in a vertical direction, as shown in FIG.
(Tape Carrier Package) 23 is vertically stacked, and the outer leads 24 of each TCP 23 are collectively connected to connection pads 25 of a mounting board 22 such as a printed wiring board, or as shown in FIG. And several S
ON (Small Outline Non-leaded Package) or QF
N (Quad Flat Non-leaded Package) 26 is vertically stacked and mounted on the mounting substrate 22, and the outer leads 24 of each package are connected in order, and the outer leads 24 of the lowermost package are connected to the mounting substrate 22. A structure connected to the connection pad 25 has been developed.

[0004]

However, a plurality of semiconductor packages 21 are mounted side by side on a single substrate.
In the mounted semiconductor module, the mounting area on the mounting board 22 increases as the number of packages increases.
There is a problem that the mounting efficiency is significantly reduced.

In a stacked module in which packages are stacked in the vertical direction and mounted, the mounting height increases as the number of packages increases, and three-dimensional mounting efficiency is reduced.

Further, in a conventional laminated module, semiconductor devices having a packaged structure are stacked, and the distance between the semiconductor devices is determined by the thickness, outer shape,
Since the distance between the packages, which is determined by the shape of the lead (outer lead), the number of terminals, and the like, cannot be reduced, it has been difficult to reduce the size of the entire module. In addition, since the length of the wiring for electrically connecting the packages becomes longer, problems such as an increase in signal delay and an increase in inductance are caused, which is an obstacle to a high-speed system.

SUMMARY OF THE INVENTION The present invention has been made to solve these problems, and has a small size and a high mounting efficiency of a semiconductor element.
It is an object of the present invention to provide a semiconductor device and a semiconductor module capable of reducing the wiring length between elements to almost zero, and a method for manufacturing them.

[0008]

According to a first aspect of the present invention, there is provided a semiconductor device having a semiconductor element substrate having a through hole penetrating front and back at an electrode terminal arrangement position, and a semiconductor element surface of the semiconductor element substrate. A surface, a surface protective film and an insulating resin film respectively formed on the opposite back surface, and a conductive pad formed around the opening of the through hole on the insulating resin film on the back surface of the semiconductor element substrate. An intermediate insulating layer provided on an inner peripheral surface of the through hole, and a conductive layer formed inside the intermediate insulating layer in the through hole, the conductive layer being provided on a surface of the semiconductor element substrate. It is electrically connected to the electrode terminal on the side and the conductor pad on the back side directly or via another conductive layer.

In a semiconductor module according to a second aspect of the present invention, a plurality of the semiconductor devices according to the first aspect of the present invention are arranged in an overlapping manner in the thickness direction, and the contact surfaces of the semiconductor devices are adhered to each other. It is characterized by the fact that the connection is made.

The method of manufacturing a semiconductor device according to a third aspect of the present invention is a method for manufacturing a semiconductor device, comprising:
Forming a surface protection film and an insulating resin film, respectively; forming a conductive pad on the insulating resin film on the back surface corresponding to the electrode terminal formed on the surface of the semiconductor element substrate; Forming a first through-hole penetrating the front and back of the semiconductor element substrate at a position where the conductive pad is formed; filling the first through-hole with an insulating resin; Forming a second through hole by penetrating the filling layer in the thickness direction, filling a conductive material in the second through hole, filling the conductive material with the filling layer and the electrode terminal And connecting the conductive pad directly or via another conductive layer.

In a fourth aspect of the present invention, a method of manufacturing a semiconductor device comprises the steps of:
Forming a surface protection film and an insulating resin film, respectively; forming a conductive pad on the insulating resin film on the back surface corresponding to the electrode terminal formed on the surface of the semiconductor element substrate; And forming a first through-hole penetrating the front and back of the semiconductor element substrate by irradiating a laser beam at a position where the conductive pad is to be formed, and at the same time, thermally oxidizing an inner peripheral surface of the formed through-hole to obtain an insulating property. A step of forming an oxide layer, a step of filling a conductive material in the first through hole in which the oxide layer is formed on an inner peripheral surface, a step of filling the conductive material with the filled layer and the electrode terminal And connecting the conductive pad directly or via another conductive layer.

According to a fifth aspect of the present invention, there is provided a method of manufacturing a semiconductor module, comprising: forming a surface protective film and an insulating resin film on a front surface and a back surface of a semiconductor element substrate, respectively; Forming a conductor pad on the back surface of the insulating resin film corresponding to the formed electrode terminal; and forming a first penetration penetrating the front and back of the semiconductor element substrate at a position where the electrode terminal and the conductor pad are formed. Forming a hole, filling the first through hole with an insulating resin, and forming a plurality of the structures having the insulating resin filling layer formed in the first through hole, The first
And a step of bonding the contact surfaces of the respective structures with an adhesive so that the positions of the through holes coincide with each other, and in the laminated structure obtained in the bonding step, the thickness of the filling layer of the insulating resin is reduced. Forming a second through-hole penetrating in the entire direction, filling the second through-hole with a conductive material, filling the conductive material with a layer, Connecting the electrode terminals or the conductive pads respectively disposed on the upper surface and the lowermost surface, directly or via another conductive layer.

In the present invention, a semiconductor wafer or a semiconductor chip obtained by dicing the semiconductor wafer is put together,
It is referred to as a semiconductor element substrate.

In the semiconductor device and the semiconductor module according to the present invention, the conductive layer formed in the through hole of the semiconductor element substrate makes a through-hole connection from the front side where the semiconductor element region is formed to the rear side. Therefore, the electrode terminals can be formed on both the front and back surfaces of the semiconductor element substrate, and the connection structure between the semiconductor element substrates and the connection structure between the semiconductor element substrate and the mounting substrate can be selected in many ways. As a result, an ultra-compact and low-cost semiconductor device and module in which a plurality of semiconductor element substrates are three-dimensionally stacked and densely mounted can be easily realized.

Further, since connection between a plurality of three-dimensionally stacked semiconductor element substrates is performed through the above-described through-hole connection, wiring between the semiconductor elements is almost unnecessary. As described above, since the length of the electric wiring between the semiconductor elements can be made almost zero, the signal delay and the occurrence of inductance due to the wiring can be significantly reduced, and the high speed and miniaturization of the module can be achieved. .

Further, in the semiconductor device and the semiconductor module of the present invention, unlike the conventional laminated module,
It is not necessary to package semiconductor elements one by one.
Then, since the layers can be collectively formed at the stage of the semiconductor element substrate, modularization is easy, and the number of manufacturing steps and the total processing time can be greatly reduced.
Therefore, the manufacturing cost per module can be significantly reduced.

[0017]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a sectional view showing a main part of a first embodiment of a semiconductor device according to the present invention.

In FIG. 1, reference numeral 1 denotes a semiconductor wafer or a semiconductor chip (hereinafter, referred to as a semiconductor element substrate), and an electrode pad 2a is formed on a surface on which an element region is formed (hereinafter, referred to as a surface). I have. In the center of the electrode pad 2a on the front side, a through hole 3 penetrating the front and back of the semiconductor element substrate 1 is provided. A surface protection film (passivation film) 4 such as silicon oxide is formed on the surface of the semiconductor element substrate 1, and an insulating resin film 5 such as polyimide is formed on the back surface. Further, on the insulating resin film 5 on the back surface, around the opening of the through hole 3, an electrode pad 2b on the back surface is formed.

In the through hole 3, an intermediate insulating layer 6 is provided in contact with the inner peripheral surface, and inside the intermediate insulating layer 6,
The conductive layer 7 is filled. Further, at both ends of the conductive layer 7 filled and formed in the through hole 3 as described above, the conductive coating layers on the front side and the back side are laid over the electrode pads 2a and 2b on the front side and the back side. 8a and 8b are formed respectively, and via these conductive coating layers 8a and 8b,
The electrode pads 2a and 2b on both sides and the conductive layer 7 are electrically connected to each other. The conductive coating layers 8 a and 8 b on at least one surface side can be formed of the same conductive material as the conductive layer 7 filled and formed in the through-hole 3.

A semiconductor device having such a structure is manufactured, for example, through the following steps.

First, as shown in FIG. 2A, a passivation film 4 made of silicon oxide or the like and an insulating resin film 5 made of polyimide or the like are formed on the front surface and the back surface of the semiconductor element substrate 1 by a conventional method. On the insulating resin film 5 on the side, electrode pads 2b on the back side are formed at positions corresponding to the electrode pads 2a formed on the front side.

Next, as shown in FIG. 2B, the center of the electrode pad 2a on the front side is formed by a method such as plasma etching, reactive ion etching (RIE), or laser beam irradiation (indicated by a white arrow). Semiconductor element substrate 1
After forming a first through-hole 3 penetrating the front and back of the first through-hole and further penetrating the electrode pad 2b on the back side, the first through-hole 3 is formed.
The inside is filled with a fluid (for example, paste-like) insulating resin, and a filling layer 9 of the insulating resin is formed as shown in FIG.

Next, as shown in FIG. 2D, the insulating resin filling layer 9 is formed by a method such as plasma etching, reactive ion etching (RIE), or laser beam irradiation.
Is formed concentrically in the thickness direction, and after forming the intermediate insulating layer 6, as shown in FIG. 2 (e), the second through hole 10 is formed in the second through hole 10. The conductive layer 7 is formed by filling a fluid conductive resin or the like. After a while, FIG.
As shown in (f), a conductive material is applied to both ends of the conductive layer 7 across the front and back electrode pads 2a and 2b, and the front and back conductive coating layers 8a are formed. ,
8b is formed. Thus, the semiconductor device of the first embodiment is obtained.

In this method of manufacturing a semiconductor device, particularly, when the first through hole 3 is formed by irradiating a laser beam, by adjusting irradiation conditions such as energy of a laser beam, the through hole is formed. Simultaneously with the formation of 3, the semiconductor on the inner peripheral surface of the hole can be thermally oxidized to form an insulating oxide (for example, silicon oxide) layer. In the method of forming the insulating oxide layer simultaneously with the formation of the through hole, the step of filling the insulating resin (FIG. 2C) and the filling step 9 of the insulating resin are performed. The first through-hole 3 is filled with a conductive resin or the like without going through the step of forming the second through-hole 10 (FIG. 2D), and then the conductive coating layer 8a on the front side and the back side , 8b can be performed.

In the semiconductor device of the first embodiment manufactured as described above, the conductive layer 7 filled and formed in the through-hole 3 penetrating the front and back of the semiconductor element substrate 1 allows the through-hole from the front side to the back side. Since the hole connection is made, electrode pads 2a for connection are provided on both front and back surfaces of the semiconductor element substrate 1.
2b can be formed. Therefore, the number of options for the connection structure between the semiconductor devices and the connection structure to the mounting substrate is greatly increased. As a result, an ultra-small and low-cost module in which a plurality of semiconductor devices are three-dimensionally stacked and densely mounted can be easily obtained.

Next, a second embodiment of the present invention will be described.

This embodiment is a semiconductor module in which a plurality of semiconductor devices are stacked and connected to each other. As shown in FIG. 3, as shown in FIG. Are shown in the drawing.), The back surface side and the front surface side are opposed to each other, and they are arranged so as to overlap with each other so that the positions of the through holes 3 coincide with each other. It is bonded and integrated through the adhesive layer 11.

Then, in the semiconductor device of each layer, the conductive coating layers 8a formed on the front side and the back side, respectively.
8b is in contact with and electrically connected to the conductive coating layers of the semiconductor device disposed in the upper layer and the lower layer, respectively.
The conductive coating layer 8a on the front surface of the semiconductor device disposed on the uppermost layer or the conductive coating layer 8b on the rear surface of the semiconductor device disposed on the lowermost layer is provided with external terminals 12 such as solder balls for mounting. Are joined.

In this embodiment, modules having a structure in which layers are sequentially stacked so that the back side and the front side of each semiconductor device are opposed to each other are described. The back side, the front side, and the front side may be overlapped so that they face each other and come into contact with each other.

In the semiconductor module of the second embodiment having such a structure, the semiconductor devices are electrically connected to each other by through-hole connections from the front side to the back side of the semiconductor element substrate 1. Since the length of the electric wiring between the semiconductor elements is almost zero, the occurrence of signal delay and inductance due to the wiring is significantly reduced, and the module can be made faster and smaller.

The semiconductor module of the second embodiment can be manufactured by the following method.

That is, in the first manufacturing method, in the semiconductor device of the first embodiment obtained by the method shown in FIG.
As shown in FIG. 4A, an adhesive layer 11 is formed by applying or applying an adhesive to the entire surface except for the electrode pad 2b on one surface (the back surface in the figure), and then, these semiconductors are formed. A plurality of devices are stacked so that the back side and the front side face each other, and the positions of the through holes 3 coincide. Then, by applying pressure while applying heat, a laminate is obtained as shown in FIG. Next, as shown in FIG. 4C, the mounting external terminals 12 such as solder balls are joined to the conductive coating layers 8a and 8b disposed on the uppermost layer or the lowermost layer of such a laminate. Thereby, the laminated module is completed.

The semiconductor module of the second embodiment can be manufactured by the following method. In the following process diagrams (e) to (j), in order to avoid complication, the insulating resin film formed on the back surface of the semiconductor element substrate is
Illustration is omitted.

In the second manufacturing method, as shown in FIG. 5A, a passivation film 4 of silicon oxide or the like and an insulating resin film 5 of polyimide or the like
Are formed, a first through hole 3 penetrating the semiconductor element substrate 1 at the center of the electrode pad 2a on the front side is formed by a method such as plasma etching, reactive ion etching (RIE), or laser beam irradiation. Form. The electrode pads 2 on the front side are formed on the insulating resin film 5 on the rear side.
After the electrode pad 2b on the back side is formed at a position corresponding to a, a first through hole 3 is formed as the electrode pad 2a on the front side.
A hole penetrating the front and back of the semiconductor element substrate 1 may be formed from the substrate to the electrode pad 2b on the back side.

Next, as shown in FIG. 5B, the first through hole 3 is filled with a fluid insulating resin to form a filling layer 9 of the insulating resin. As shown in (1), a conductive material is applied to at least one end (for example, the end on the back surface side) of the insulating resin filling layer 9 to form a conductive coating layer 8b.

Next, in stacking and laminating a plurality of such semiconductor structures, as shown in FIG. 5D, the conductive coating layer 8b on the opposing surface (for example, the back surface) of each structure is used. After an adhesive layer 11 is formed on the entire surface except for the upper portion by applying or applying an adhesive, as shown in FIG. 5E, the adhesive layers 11 are overlaid so that the positions of the through holes 3 coincide with each other, and thermocompression-bonded. Thus, as shown in FIG. 5F, a stacked body of the semiconductor structure is obtained.

Thereafter, as shown in FIGS. 5G and 5H, the first penetration of each semiconductor structure is performed by a method such as plasma etching, reactive ion etching (RIE), or laser beam irradiation. A second through-hole 10 penetrating through the insulating resin filling layer 9 formed in the hole 3 and the conductive coating layer 8b formed at the end thereof is formed in the entire thickness direction of the laminate. After the continuous formation, as shown in FIG. 5 (i), a conductive resin is filled in the second through-hole 10,
The conductive layer 7 is formed.

In this manner, the conductive coating layer 8b formed on the back surface of each semiconductor structure is conducted to the conductive layer 7 formed in the second through hole 10, so that the conductive layer 7b
, The respective semiconductor structures are electrically connected to each other. At this stage, only the electrode pads 2a arranged and formed on the uppermost surface of the stacked body are not connected to the conductive layer 7.

Thereafter, as shown in FIG. 5 (j), a conductive coating layer 8a is formed on the uppermost electrode pad 2a by applying a conductive material or the like.
After the uppermost electrode pad 2a and the conductive layer 7 are electrically connected to each other, the mounting external terminals 12 such as ball-shaped solder bumps are joined to the uppermost conductive coating layer 8a to complete the laminated module. I do.

According to the second manufacturing method, the first
In the manufacturing method described above, the formation of the second through hole 10 and the injection and filling of the conductive resin into the through hole, which were performed in each of the semiconductor devices, are performed on the entire stacked body in which the plurality of semiconductor structures are stacked. Therefore, since the processes can be performed at once, the number of steps and the total process time can be significantly reduced. And not only the modularization process becomes easy, but also the manufacturing cost per module can be reduced.

In the semiconductor device of the first embodiment, when the insulating resin film provided on the back surface side of the semiconductor element substrate 1 is made of an adhesive insulating material, the first and second insulating films are used. In the thermocompression bonding step of the manufacturing method described above, there is no need to apply or apply an adhesive to the opposing surface of the semiconductor device, and the number of steps can be reduced.

Next, another embodiment of a semiconductor module in which a plurality of semiconductor devices are stacked and electrically connected will be described.

In the semiconductor module of the third embodiment, as shown in FIG. 6, a plurality of semiconductor devices of the first embodiment (three are shown in the figure) are formed on the back side and the front side. They are stacked and arranged so that the sides face each other. And
In each semiconductor device, an electrode pad 2c having no through hole is formed on the surface of the semiconductor element substrate 1, and the electrode pad 2c and the electrode pad 2 on the front side having the through hole 3 are formed.
a is conducted by an internal wiring (not shown) formed on the same element region forming surface.

In addition, between the vertically opposed semiconductor devices,
The position of the through hole 3 does not match, and the through hole 3 of one semiconductor device (for example, the uppermost semiconductor device) is formed.
The conductive layer 7 formed therein and the electrode pad 2c having no through hole of the other semiconductor device (for example, a semiconductor device of an intermediate layer) are in contact with each other and are electrically connected. Also,
The conductive coating layer 8 on the front surface side of the semiconductor device disposed on the uppermost layer
The mounting external terminal 12 such as a solder ball is joined to the conductive coating layer 8b on the back surface side of the semiconductor device disposed at the bottom of the semiconductor device.

The semiconductor module of the third embodiment is manufactured by the following method.

First, as shown in FIG. 7A, in the semiconductor device obtained by the method shown in FIG. 2 described above, the adhesive is applied to the entire surface except on the electrode pad 2b on one surface (the back surface in the figure). After the adhesive layer 11 is formed by sticking or applying, a plurality of these semiconductor devices are electrically connected to each other on the back surface side and the front surface side, and formed in the through hole 3 of one of the semiconductor devices. Layer 7 (and electrode pads 2a, 2a,
c) and the electrode pad 2c having no through-hole of the other semiconductor device are aligned and overlapped so that the electrode pad 2c does not have a through-hole, and pressure-bonded while applying heat or the like. FIG. 7 shows the laminate thus obtained.
(B). Thereafter, the mounting external terminals 12 such as solder balls are joined to the conductive coating layers 8a and 8b disposed on the uppermost layer or the lowermost layer of the stacked body, thereby completing the stacked module.

In the semiconductor module of the third embodiment configured as described above, each semiconductor device is formed in a through hole connection from the front side to the back side of the semiconductor element substrate 1 and on the semiconductor element region forming surface. Due to internal wiring
They are electrically connected to each other. Therefore, in each semiconductor device, the degree of freedom in designing electrode pads and wirings formed on the semiconductor element substrate 1 is increased, and the semiconductor element substrate 1 having various patterns of electrode pads and wiring patterns is used. A semiconductor module having electrical characteristics can be configured.

[0049]

As is apparent from the above description, in the present invention, a through-hole connection from the front surface side in which the element region is formed to the rear surface side is provided by the conductive layer formed in the through hole of the semiconductor element substrate. Therefore, electrodes can be formed on both the front and back surfaces of the semiconductor element substrate, and the connection structure between the semiconductor element substrates and the connection structure between the semiconductor element substrate and the mounting substrate can be selected over many options. Can be.
As a result, a plurality of semiconductor element substrates are three-dimensionally stacked,
An ultra-compact and low-cost semiconductor device and module mounted at high density can be easily realized.

Further, since the connection between the semiconductor elements is made through the through-hole connection, the length of the electric wiring between the elements can be reduced to almost zero, and the signal delay and the occurrence of inductance due to the wiring are significantly reduced. Higher speed and smaller size of the module can be achieved.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a main part of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view showing each step of the method for manufacturing the semiconductor device of the first embodiment.

FIG. 3 is a sectional view showing a main part of a semiconductor module according to a second embodiment of the present invention.

FIG. 4 is a sectional view showing each step of a first method of manufacturing the second embodiment.

FIG. 5 is a sectional view showing each step of a second method of manufacturing the second embodiment.

FIG. 6 is a sectional view showing a main part of a semiconductor module according to a third embodiment of the present invention.

FIG. 7 is a sectional view showing each step of a method for manufacturing the third embodiment.

FIG. 8 is a perspective view showing an example of a conventional semiconductor module.

FIG. 9 is a sectional view showing an example of a conventional semiconductor laminated module.

FIG. 10 is a sectional view showing another example of a conventional semiconductor laminated module.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Semiconductor element substrate 2a ... Front side electrode pad 2b ... Back side electrode pad 3 ... Through hole (first through hole) 4 ... Surface protective film (passivation film) 5 ... Insulating resin film 6... Intermediate insulating layer 7... Conductive layer 8a... Front surface conductive coating layer 8b... Back side conductive coating layer 9... Insulating resin filling layer 10 ... Second through-hole 11 Adhesive layer 12 External terminals for mounting

Claims (7)

[Claims] 1. A semiconductor element substrate having a through-hole penetrating the front and back at a position where an electrode terminal is provided, and a front surface protection film formed on a front surface, which is a semiconductor element surface of the semiconductor element substrate, and a back surface on an opposite side. A conductive pad formed around the opening of the through hole on the insulating resin film on the back surface of the semiconductor element substrate; and an intermediate insulating layer provided on the inner peripheral surface of the through hole. And a conductive layer formed inside the intermediate insulating layer in the through-hole, and the conductive layer is directly or otherly connected to the electrode terminals on the front side and the conductive pads on the back side of the semiconductor element substrate. A semiconductor device which is electrically connected through a conductive layer. 2. The method according to claim 1, further comprising:
A semiconductor module, wherein the semiconductor modules are arranged so as to be overlapped in a thickness direction, and a contact surface of each semiconductor device is bonded and electrically connected to each other. 3. The semiconductor device according to claim 1, wherein a plurality of the semiconductor devices are disposed so as to overlap with each other so that the positions of the respective through-holes coincide with each other, and electrical connection between the semiconductor devices is performed via a conductive layer formed in the through-hole. 3. The semiconductor module according to claim 2, wherein said semiconductor module is provided. 4. A semiconductor device according to claim 1, further comprising: a mismatching portion in which positions of the through holes of the semiconductor device do not match. In the mismatching portion, an electrical connection is established via an internal wiring connecting electrode terminals formed on the semiconductor element surface. The semiconductor module according to claim 2, wherein the semiconductor module is connected to the semiconductor module. 5. A step of forming a surface protection film and an insulating resin film on a front surface and a back surface, which are semiconductor element surfaces of a semiconductor element substrate, respectively, and corresponding to electrode terminals formed on the surface of the semiconductor element substrate. Forming a conductor pad on the insulating resin film on the back surface; forming a first through hole penetrating the front and back of the semiconductor element substrate at a position where the electrode terminal and the conductor pad are formed; Filling an insulating resin into the through-hole, forming a second through-hole by penetrating the filling layer of the insulating resin in a thickness direction, and forming a conductive film in the second through-hole. A method of filling a conductive material, and a step of connecting the filled layer of the conductive material with the electrode terminals and the conductive pads directly or through another conductive layer. . 6. A step of forming a surface protection film and an insulating resin film on a front surface and a back surface, respectively, which are semiconductor element surfaces of the semiconductor element substrate, and corresponding to electrode terminals formed on the surface of the semiconductor element substrate. Forming a conductive pad on the insulating resin film on the back surface, and forming a first through hole penetrating the front and back of the semiconductor element substrate by irradiating a laser beam at a position where the electrode terminal and the conductive pad are formed. At the same time, a step of thermally oxidizing an inner peripheral surface of the formed through hole to form an insulating oxide layer; and forming a conductive layer in the first through hole having the oxide layer formed on the inner peripheral surface. A method of filling a conductive material, and a step of connecting the filled layer of the conductive material with the electrode terminals and the conductive pads directly or through another conductive layer. . 7. A step of forming a surface protection film and an insulating resin film on a front surface and a back surface, respectively, which are semiconductor element surfaces of a semiconductor element substrate, and corresponding to electrode terminals formed on the surface of the semiconductor element substrate, Forming a conductor pad on the insulating resin film on the back surface; forming a first through hole penetrating the front and back of the semiconductor element substrate at a position where the electrode terminal and the conductor pad are formed; Filling the insulating resin into the through-hole, and aligning the plurality of structures having the insulating resin-filled layer formed in the first through-hole with the position of the first through-hole. And bonding the contact surfaces of the respective structures with an adhesive, and penetrating the filled layer of the insulating resin over the entire thickness direction in the laminated structure obtained in the bonding process. Forming a second through hole; A step of filling the second through-hole with a conductive material, a filling layer of the conductive material, and the electrode terminals or the conductive pads respectively arranged on the uppermost surface and the lowermost surface of the laminated structure, Or a step of connecting via another conductive layer.