JP2000309796A - Detergent composition - Google Patents
Detergent compositionInfo
- Publication number
- JP2000309796A JP2000309796A JP11798699A JP11798699A JP2000309796A JP 2000309796 A JP2000309796 A JP 2000309796A JP 11798699 A JP11798699 A JP 11798699A JP 11798699 A JP11798699 A JP 11798699A JP 2000309796 A JP2000309796 A JP 2000309796A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- cleaning
- pad
- composition
- detergent composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Detergent Compositions (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ハードディスク等
に用いられる金属質基材やガラス質基材、半導体等の被
研磨物を研磨する際に使用されるパッドの洗浄に有用な
洗浄剤組成物及びそれを用いた研磨に使用するパッドの
洗浄方法に関する。更に詳しくは、研磨に使用された研
磨剤粒子、研磨時に被研磨材料から発生した被研磨物粒
子等の固形物により目詰まりした研磨パッド等の研磨に
使用されるパッドから、目詰まりしている固形物を効率
よく除去しうる洗浄剤組成物及びそれを用いた洗浄方法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning composition useful for cleaning a pad used when polishing a metal or glass substrate used for a hard disk or the like, or a semiconductor or the like to be polished. And a method for cleaning a pad used for polishing using the same. More specifically, the polishing agent is clogged from a pad used for polishing, such as a polishing pad clogged with abrasive particles used for polishing, solid objects such as particles to be polished generated from a material to be polished during polishing. The present invention relates to a cleaning composition capable of efficiently removing solids and a cleaning method using the same.
【０００２】[0002]
【従来の技術】固体表面の平坦化のための表面研磨工
程、例えば半導体用シリコンウエハ等のポリッシング工
程、半導体の層間絶縁膜の平坦化や銅等の金属配線形成
工程におけるダマシン工程、ハードディスク用のアルミ
ニウム基材、ニッケル−リンめっき処理基材、各種のガ
ラス基材等の表面研磨工程等においては、ウエハ、金属
基材、ガラス基材等の平坦化すべき被研磨材料の平滑度
を目的とする値に調整するために、特定の値に設定され
た表面粗さを有する研磨パッド上に研磨液を供給しなが
ら被研磨材料を圧着し、被研磨材料及び研磨パッドのい
ずれか一方又は双方を回転させながら研磨処理を行う方
法が採用されている。研磨に使用する研磨パッドは、一
般に、研磨定盤上に接して固定されており、研磨剤とし
て酸化珪素、酸化アルミニウム、酸化セリウム、酸化ジ
ルコニウム、ダイヤモンド等の微粒子が使用されてい
る。研磨時に使用される研磨液は、使用目的に応じてｐ
Ｈが調整された水溶液に前記研磨剤を分散させたもので
ある。また、研磨パッドには、一般にポリウレタンフォ
ーム等の発泡体、これと他の樹脂との複合素材等の有機
高分子化合物複合材料、それらに各種無機化合物粒子や
有機化合物粒子を分散させたコンパウンド樹脂組成物等
が使用されている。2. Description of the Related Art A surface polishing process for flattening a solid surface, for example, a polishing process for a silicon wafer for a semiconductor, a damascene process for flattening an interlayer insulating film of a semiconductor and a metal wiring process for a copper, and a process for a hard disk. In the surface polishing step of an aluminum substrate, a nickel-phosphorous plating treated substrate, various glass substrates, etc., the purpose is to smooth a material to be polished to be flattened, such as a wafer, a metal substrate, and a glass substrate. In order to adjust the value, the material to be polished is pressed while supplying a polishing liquid onto a polishing pad having a surface roughness set to a specific value, and one or both of the material to be polished and the polishing pad are rotated. A method of performing a polishing process while performing the polishing is employed. A polishing pad used for polishing is generally fixed in contact with a polishing platen, and fine particles such as silicon oxide, aluminum oxide, cerium oxide, zirconium oxide, and diamond are used as a polishing agent. The polishing liquid used during polishing depends on the purpose of use.
The abrasive is dispersed in an aqueous solution in which H is adjusted. The polishing pad is generally made of a foam such as polyurethane foam, an organic polymer compound composite material such as a composite material of this and another resin, and a compound resin composition in which various inorganic compound particles and organic compound particles are dispersed therein. Things are used.
【０００３】しかしながら、被研磨材料を研磨する際に
は、研磨剤粒子の凝集物や被研磨材料から発生した研磨
屑や研磨パッドの破片等が研磨パッド等のパッドの表面
に付着し、パッドの表面粗さが大きく変化し、研磨に要
する時間が長くなって生産性が低下したり、また所望の
表面平坦度が得られなくなることがあるという欠点があ
る。However, when polishing a material to be polished, agglomerates of abrasive particles, polishing debris generated from the material to be polished, fragments of the polishing pad, and the like adhere to the surface of the pad, such as a polishing pad. There are drawbacks in that the surface roughness changes greatly, the time required for polishing increases, and the productivity decreases, and the desired surface flatness may not be obtained.
【０００４】このような欠点を解消する方法として、研
磨パッドの表面をダイヤモンド粒子を用いて所望の表面
粗さとなるように削り取るドレッシングと称される方
法、ブラシを用いて研磨パッド等のパッドの表面から付
着物を除去する方法等が採用されている（特開平10-329
003 号公報）。[0004] As a method of solving such a drawback, a method called dressing in which the surface of a polishing pad is shaved to have a desired surface roughness using diamond particles, or a surface of a pad such as a polishing pad using a brush is used. A method of removing extraneous matter from water has been adopted (JP-A-10-329).
003 publication).
【０００５】しかし、前者の方法には、研磨パッドの有
効使用期間が短くなるという欠点があり、また後者の方
法には、付着物を十分に除去性することができず、所望
の表面粗さが得られにくいという欠点がある。[0005] However, the former method has a drawback that the effective use period of the polishing pad is shortened, and the latter method cannot sufficiently remove deposits and has a desired surface roughness. Is difficult to obtain.
【０００６】[0006]
【発明が解決しようとする課題】本発明は、研磨液中の
研磨剤粒子、それらの凝集物、被研磨物の研磨屑等の固
形汚れによって汚染された、研磨に使用される研磨パッ
ド等のパッドの洗浄に有効な洗浄剤組成物及びそれを用
いた研磨パッド等のパッドの洗浄方法を提供することを
目的とする。SUMMARY OF THE INVENTION The present invention relates to a polishing pad and the like used for polishing, which are contaminated by abrasive particles in a polishing liquid, aggregates thereof, and solid dirt such as polishing debris of an object to be polished. An object of the present invention is to provide a cleaning composition effective for cleaning a pad and a method for cleaning a pad such as a polishing pad using the same.
【０００７】[0007]
【課題を解決するための手段】本発明は、（１）アニオ
ン性界面活性剤を含有してなる、研磨に使用されるパッ
ド用洗浄剤組成物、並びに（２）前記洗浄剤組成物を用
いて研磨に使用されるパッドを洗浄する洗浄方法に関す
る。The present invention provides (1) a cleaning composition for a pad used for polishing, which comprises an anionic surfactant, and (2) a cleaning composition using the cleaning composition. The present invention relates to a cleaning method for cleaning a pad used for polishing.
【０００８】[0008]
【発明の実施の形態】本発明の洗浄剤組成物には、研磨
パッド等のパッド上の固形汚れを効率よく除去する観点
から、アニオン性界面活性剤が使用される。DESCRIPTION OF THE PREFERRED EMBODIMENTS An anionic surfactant is used in the cleaning composition of the present invention from the viewpoint of efficiently removing solid dirt on a pad such as a polishing pad.
【０００９】アニオン性界面活性剤としては、カルボン
酸及びその塩、スルホン酸及びその塩、硫酸エステル及
びその塩、亜硫酸エステル及びその塩、燐酸エステル及
びその塩、亜燐酸エステル及びその塩、フォスフォン酸
エステル及びその塩等が挙げられる。Examples of the anionic surfactant include carboxylic acids and salts thereof, sulfonic acids and salts thereof, sulfates and salts thereof, sulfites and salts thereof, phosphates and salts thereof, phosphites and salts thereof, and phosphones. Acid esters and salts thereof.
【００１０】塩を形成するための塩基としては、ナトリ
ウム、カリウム等のアルカリ金属、カルシウム等のアル
カリ土類金属、アンモニア等の無機塩基、有機アミン、
アルカノールアミン、テトラメチルアンモニウムハイド
ロオキサイド等の有機塩基が挙げられる。これらの中で
は、半導体用シリコンウエハの研磨や半導体のＣＭＰ
（ケミカルメカニカルポリッシング）に用いられたパッ
ドの洗浄には、被研磨材料の電気特性等に及ぼす影響を
考慮して、アンモニア及び有機塩基が好ましい。より具
体的には、石鹸やＮ−アシルアミノ酸塩、ポリオキシア
ルキレンアルキルエーテルカルボン酸塩、アシル化ペプ
チド等のカルボン酸塩、アルキルスルホン酸塩、アルキ
ルベンゼンスルホン酸塩、アルキルナフタレンスルホン
酸塩、スルホンコハク酸塩、オレフィンスルホン酸塩、
Ｎ−アシルスルホン酸塩等のスルホン酸塩、アルキル硫
酸エステル塩、ポリオキシアルキレンアルキルエーテル
硫酸エステル塩、ポリオキシアルキレンアルキルアリル
エーテル硫酸エステル塩、アルキルアミド硫酸エステル
塩等の硫酸エステル塩、アルキル燐酸エステル塩、ポリ
オキシアルキレンアルキルエーテル燐酸エステル塩、ポ
リオキシアルキレンアルキルアリルエーテル燐酸エステ
ル塩等の燐酸エステル塩等のアニオン性界面活性剤が挙
げられる。また、分子中にカルボン酸塩、スルホン酸
塩、硫酸エステル塩又は燐酸エステル塩を含む化合物の
単独重合体又は共重合体、又はそれらと重合しうる他の
化合物との共重合体であるポリアクリル酸塩、ポリメタ
アクリル酸塩、ポリマレイン酸塩、アクリル酸とアクリ
ル酸エステル、アクリル酸アマイド、マレイン酸等との
共重合体の塩、オレフィンとマレイン酸との共重合体の
塩等やナフタレンスルホン酸のホルマリン縮合物の塩、
ポリスチレン硫酸化物の塩、芳香族スルホン酸のホルマ
リン縮合物の塩等のアニオン性活性剤が挙げられる。こ
れらのアニオン性活性剤は、単独で用いてもよく、混合
して用いてもよい。これらのアニオン性活性剤の中で
は、固形汚れの除去性の観点から、分子中に−ＣＯＯＲ
及び−ＳＯ3 Ｒ（Ｒは水素原子、無機塩基または有機塩
基を示す）からなる群より選ばれた基を１種以上を５個
以上含み、25℃の水100 ｇに対する溶解度が0.05ｇ以上
で、かつ分子量500 〜30万を有する化合物が好ましく、
より好ましくは分子中に−ＣＯＯＲ及び−ＳＯ3 Ｒ（Ｒ
は前記と同じ）からなる群より選ばれた基を１種以上を
10個以上含み、25℃の水100 ｇに対する溶解度が0.05ｇ
以上で、かつ分子量1000〜15万を有する化合物である。The base for forming a salt includes an alkali metal such as sodium and potassium, an alkaline earth metal such as calcium, an inorganic base such as ammonia, an organic amine, and the like.
Organic bases such as alkanolamine, tetramethylammonium hydroxide and the like can be mentioned. Among these, polishing of silicon wafers for semiconductors and CMP of semiconductors
In cleaning the pad used for (chemical mechanical polishing), ammonia and an organic base are preferable in consideration of the influence on the electrical characteristics and the like of the material to be polished. More specifically, carboxylate such as soap, N-acyl amino acid salt, polyoxyalkylene alkyl ether carboxylate, acylated peptide, alkyl sulfonate, alkyl benzene sulfonate, alkyl naphthalene sulfonate, sulfone succinate Acid salt, olefin sulfonate,
Sulfonates such as N-acyl sulfonates, alkyl sulfates, polyoxyalkylene alkyl ether sulfates, polyoxyalkylene alkyl allyl ether sulfates, sulfates such as alkyl amide sulfates, and alkyl phosphates And anionic surfactants such as salts, phosphate salts such as polyoxyalkylene alkyl ether phosphate salts, and polyoxyalkylene alkyl allyl ether phosphate salts. Further, a polyacryl which is a homopolymer or a copolymer of a compound containing a carboxylate, a sulfonate, a sulfate ester salt or a phosphate ester in a molecule, or a copolymer with another compound polymerizable with them. Acid salts, polymethacrylates, polymaleates, salts of copolymers of acrylic acid and acrylic acid esters, acrylic acid amides, maleic acid, etc., salts of copolymers of olefins and maleic acid, and naphthalene sulfone Salts of formalin condensates of acids,
Anionic activators such as salts of polystyrene sulfate and salts of formalin condensates of aromatic sulfonic acids are included. These anionic activators may be used alone or as a mixture. Among these anionic activators, -COOR is contained in the molecule from the viewpoint of removal of solid soil.
And -SO 3 R (R is a hydrogen atom, an inorganic or organic base are shown) was selected from the group consisting of groups comprising one or more 5 or more, in solubility than 0.05g for 100 g of water of 25 ° C. And a compound having a molecular weight of 500 to 300,000 is preferable,
-COOR and -SO more preferably in the molecule 3 R (R
Is the same as the above).
Contains 10 or more and has a solubility of 0.05 g in 100 g of water at 25 ° C.
These are compounds having a molecular weight of 1,000 to 150,000.
【００１１】洗浄剤組成物中におけるアニオン性界面活
性剤の含有量は、100 重量％であってもよく、水溶液の
場合には、0.01〜95重量％が好ましく、0.01〜50重量％
がより好ましく、0.05〜25重量％がさらに好ましい。The content of the anionic surfactant in the detergent composition may be 100% by weight, and in the case of an aqueous solution, it is preferably 0.01 to 95% by weight, more preferably 0.01 to 50% by weight.
Is more preferable, and 0.05 to 25% by weight is further preferable.
【００１２】本願発明の洗浄剤組成物にキレート剤を含
有させると固形汚れの洗浄性を向上させることができ
る。キレート剤としては、アミノトリメチレンフォスフ
ォン酸、１−ヒドロキシエチリデン−１，１−ジフォス
フォン酸、エチレンジアミンテトラメチレンフォスフォ
ン酸等のフォスフォン酸系、エチレンジアミン四酢酸
塩、ニトリロトリ酢酸塩等のアミノカルボキシレート
系、ジヒドロキシエチルグリシン等のヒドロキシアミノ
カルボキシレート系、クエン酸、蓚酸、グルコン酸等の
ヒドロキシカルボン酸系等のキレート剤が挙げられる。
洗浄剤組成物中におけるキレート剤の含有量は、固形状
汚れを除去する観点から、0.01〜10重量％が好ましく、
0.05〜５重量％がより好ましい。When a chelating agent is added to the cleaning composition of the present invention, the cleaning properties of solid soil can be improved. Examples of the chelating agent include phosphonic acids such as aminotrimethylenephosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, and ethylenediaminetetramethylenephosphonic acid; and aminocarboxylates such as ethylenediaminetetraacetate and nitrilotriacetate. And chelating agents such as hydroxyaminocarboxylates such as dihydroxyethylglycine and hydroxycarboxylic acids such as citric acid, oxalic acid and gluconic acid.
The content of the chelating agent in the detergent composition is preferably from 0.01 to 10% by weight from the viewpoint of removing solid dirt,
0.05-5% by weight is more preferred.
【００１３】水は、アニオン性界面活性剤等を均一に溶
解させる溶媒として用いられる。水は、本発明の洗浄剤
組成物の目的を阻害しないものであれば特に限定される
ものではない。水としては、超純水、純水、イオン交換
水、蒸留水、通常の水道水等が挙げられる。Water is used as a solvent for uniformly dissolving an anionic surfactant and the like. Water is not particularly limited as long as it does not inhibit the purpose of the cleaning composition of the present invention. Examples of water include ultrapure water, pure water, ion-exchanged water, distilled water, ordinary tap water, and the like.
【００１４】洗浄剤組成物における水の含有量は、洗浄
性及び洗浄剤組成物の均一性の観点及び洗浄性の観点か
ら99.99 重量％以下が好ましい。水の含有量は、好まし
くは50〜99.99 重量％、より好ましくは75〜99.95 重量
％である。The content of water in the detergent composition is preferably 99.99% by weight or less from the viewpoints of detergency, uniformity of the detergent composition and detergency. The water content is preferably 50 to 99.99% by weight, more preferably 75 to 99.95% by weight.
【００１５】洗浄剤組成物のｐＨは、洗浄性及び部材腐
食防止の観点から、２〜13が好ましく、５〜11.5がより
好ましい。洗浄剤組成物のｐＨ調整は必要に応じ、無機
あるいは有機の酸又は塩基を配合して行うことができ
る。The pH of the detergent composition is preferably from 2 to 13, and more preferably from 5 to 11.5, from the viewpoint of detergency and prevention of corrosion of members. The pH of the detergent composition can be adjusted by blending an inorganic or organic acid or base, if necessary.
【００１６】洗浄剤組成物に、炭素数１〜20の鎖状又は
環状の飽和又は不飽和の炭化水素基とポリオキシアルキ
レンアルキルオキサイドとを有する非イオン性界面活性
剤を配合すると、非イオン性界面活性剤の濡れ促進効果
により固形汚れの除去性を向上させることができるの
で、好ましい。中でも、炭素数が４〜12の炭化水素基と
平均付加モル数が１〜50のポリオキシアルキレンとを有
する非イオン性界面活性剤が好ましい。ポリオキシアル
キレンは、エチレンオキサイド又はプロピレンオキサイ
ドの重合体が好ましい。ポリオキシアルキレンアルキル
エーテル系非イオン性界面活性剤が特に好ましい。When a nonionic surfactant having a chain or cyclic saturated or unsaturated hydrocarbon group having 1 to 20 carbon atoms and a polyoxyalkylene alkyl oxide is added to the detergent composition, This is preferable because the effect of promoting the wetting of the surfactant can improve the removability of solid dirt. Among them, a nonionic surfactant having a hydrocarbon group having 4 to 12 carbon atoms and a polyoxyalkylene having an average addition mole number of 1 to 50 is preferable. The polyoxyalkylene is preferably a polymer of ethylene oxide or propylene oxide. Polyoxyalkylene alkyl ether nonionic surfactants are particularly preferred.
【００１７】研磨パッド等のパッドの洗浄にあたって
は、洗浄剤組成物に含有されているアニオン性界面活性
剤の濃度が0.01〜20重量％、より好ましくは0.05〜10重
量％となるように、該洗浄剤組成物を水で濃度調整して
使用することが好ましい。In cleaning a pad such as a polishing pad, the concentration of the anionic surfactant contained in the detergent composition is adjusted to 0.01 to 20% by weight, more preferably 0.05 to 10% by weight. It is preferable to use the detergent composition after adjusting the concentration with water.
【００１８】本発明の洗浄剤組成物は、固体表面の平坦
化のためになされる表面研磨工程、例えば半導体用シリ
コンウエハ等のラッピング又はポリシング工程、半導体
の層間絶縁膜の平坦化や銅やタングステン等の金属配線
形成工程のダマシン工程、ハードディスク用のアルミニ
ウム基材やニッケル−リンめっき処理基材、各種ガラス
基材の表面研磨工程等で用いられる研磨パッドや被研磨
材料保持パッド等のパッドの洗浄に特に好適に用いるこ
とができる。The cleaning composition of the present invention can be used in a surface polishing step for flattening a solid surface, for example, a lapping or polishing step for a silicon wafer for a semiconductor, a flattening of an interlayer insulating film of a semiconductor, a copper or tungsten or the like. Cleaning of pads such as damascene process for forming metal wiring such as aluminum substrate, nickel-phosphorus plating substrate for hard disk, polishing pad used for surface polishing process of various glass substrates, and material holding pad for polishing. Can be particularly preferably used.
【００１９】本発明の洗浄剤組成物は、シリコンウエ
ハ、半導体、ハードデスク基板のＣＭＰに使用する研磨
パッドに用いると、優れた固形汚れの洗浄性が得られや
すくなるので、好適に使用しうるものである。When the cleaning composition of the present invention is used for a polishing pad used for CMP of a silicon wafer, a semiconductor, or a hard disk substrate, excellent cleaning properties of solid dirt can be easily obtained, so that the cleaning composition can be preferably used. Things.
【００２０】本発明の洗浄剤組成物は、ヒュームドシリ
カ、コロイダルシリカ等の酸化珪素、酸化アルミニウ
ム、酸化セリウム、酸化ジルコニウム、酸化鉄、炭化珪
素、ダイヤモンド等の研磨剤を用いる研磨で使用される
研磨パッド等のパッドの洗浄に特に有効である。また本
発明の洗浄剤組成物は、パッドの種類や形状に関係な
く、良好な洗浄性を発現するが、ポリウレタンフォー
ム、ポリエステル繊維からなる不織布にポリウレタンを
含浸し、発泡させて得られた素材や、酢酸ビニル樹脂等
の有機高分子素材からなるパッド、それらの樹脂に各種
無機粒子や有機粒子を分散させたコンパウンド樹脂組成
物からなるパッド、無機化合物燒結体等の無機物からな
るパッドの洗浄に特に効果的に使用することができる。The cleaning composition of the present invention is used for polishing using an abrasive such as silicon oxide such as fumed silica and colloidal silica, aluminum oxide, cerium oxide, zirconium oxide, iron oxide, silicon carbide and diamond. It is particularly effective for cleaning pads such as polishing pads. Further, the cleaning composition of the present invention, regardless of the type and shape of the pad, exhibits good detergency, but polyurethane foam, a material obtained by impregnating a non-woven fabric made of polyester fiber with polyurethane and foaming. For cleaning pads made of organic polymer materials such as vinyl acetate resin, pads made of a compound resin composition in which various inorganic particles and organic particles are dispersed in those resins, and pads made of inorganic substances such as sintered inorganic compounds. Can be used effectively.
【００２１】洗浄温度は、10〜80℃が好ましく、20〜60
℃がより好ましい。研磨パッド等のパッドの洗浄にあた
っては、浸漬洗浄、液中噴流洗浄、スプレー洗浄、ブラ
シ洗浄、超音波洗浄等の方法を用いて洗浄することがで
きる。洗浄性の観点から、単なる浸漬洗浄よりも機械力
を加えたスプレー洗浄、ブラシ洗浄等の洗浄方法が好ま
しい。また、研磨パッドのドレッシング時に本発明の洗
浄剤組成物を用いながらドレッシングを行なうと、パッ
ドの洗浄とパッドの目立てが同時に行なわれるので好ま
しい。The washing temperature is preferably from 10 to 80 ° C., and from 20 to 60 ° C.
C is more preferred. When cleaning a pad such as a polishing pad, it can be cleaned using a method such as immersion cleaning, submerged jet cleaning, spray cleaning, brush cleaning, or ultrasonic cleaning. From the viewpoint of cleanability, a cleaning method such as spray cleaning or brush cleaning using mechanical force is preferable to simple immersion cleaning. It is preferable to perform dressing while using the cleaning composition of the present invention at the time of dressing the polishing pad, because the pad is cleaned and the pad is dressed at the same time.
【００２２】[0022]
【実施例】実施例１〜９及び比較例 ＣＭＰ研磨して銅配線を形成するために使用した、研磨
剤であるアルミナ粒子や被研磨材料である銅やシリコン
研磨屑が付着したポリウレタン系パッドを縦５ｃｍ、横
５ｃｍの大きさに切り取って試験用パッドを作製した。Examples 1 to 9 and Comparative Examples Polyurethane-based pads used for forming a copper wiring by CMP polishing to which alumina particles as an abrasive, copper as a material to be polished and silicon polishing debris adhered were used. A test pad was prepared by cutting it into a size of 5 cm in length and 5 cm in width.
【００２３】得られた試験用パッドを30℃に保った表１
に示す組成の洗浄剤組成物中に浸漬し、超音波（26ＫＨ
ｚ）を照射しながら30秒間洗浄した後、30℃のイオン交
換水中で超音波（26ＫＨｚ）を照射しながら30秒間すす
いだ。Table 1 where the obtained test pads were kept at 30 ° C.
Immersed in a cleaning composition of the composition shown in
After washing for 30 seconds while irradiating z), the substrate was rinsed for 30 seconds while irradiating ultrasonic waves (26 KHz) in ion exchanged water at 30 ° C.
【００２４】洗浄後、この試験用パッドを燃焼し、試験
用パッド上に残存している研磨剤のアルミナ粒子や被研
磨材料である銅やシリコン研磨屑由来の無機残留物量を
重量測定し、洗浄効率を式： 〔洗浄効率（％）〕＝〔（洗浄前の無機残留物）−（洗
浄後の無機残留物）〕÷〔洗浄前の無機残留物〕×100 に従って求めた。After the cleaning, the test pad is burned, and the alumina particles of the abrasive remaining on the test pad and the amount of inorganic residues derived from copper or silicon polishing chips as the material to be polished are weighed. The efficiency was determined according to the formula: [washing efficiency (%)] = [(inorganic residue before washing) − (inorganic residue after washing)] ÷ [inorganic residue before washing] × 100.
【００２５】尚、表１に示す各化合物の種類（記号）
は、以下のことを意味する。The type (symbol) of each compound shown in Table 1
Means the following:
【００２６】Ａ：ポリオキシエチレンラウリル硫酸エス
テルのカリウム塩（オキシエチレンの平均付加モル数：
10モル） Ｂ：ドデシルベンゼンスルホン酸ナトリウム塩 Ｃ：ポリアクリル酸アンモニウム（平均分子量6000） Ｄ：アクリル酸−マレイン酸共重合体のナトリウム塩
（平均分子量1000） Ｅ：アクリル酸−ポリオキシエチレンアクリル酸エステ
ル（オキシエチレンの平均付加モル数：５モル）共重合
体のナトリウム塩（平均分子量10000) Ｆ：ポリスチレンスルホン酸モノエタノールアミン塩
（平均分子量15万） Ｇ：ナフタリンスルホン酸のホルマリン縮合物のナトリ
ウム塩（分子量5000） Ｈ：ポリオキシエチレンモノブチルエーテル（オキシエ
チレンの平均付加モル数：２モル） Ｉ：エチレンジアミン四酢酸ナトリウム塩 Ｊ：アミノトリメチレンフォスフォン酸アンモニウム塩A: Potassium salt of polyoxyethylene lauryl sulfate (average number of moles of oxyethylene added:
B: sodium salt of dodecylbenzenesulfonic acid C: ammonium polyacrylate (average molecular weight 6000) D: sodium salt of acrylic acid-maleic acid copolymer (average molecular weight 1000) E: acrylic acid-polyoxyethylene acrylic acid Sodium salt of ester (average number of moles of oxyethylene added: 5 mol) copolymer (average molecular weight 10,000) F: polyethanolsulfonic acid monoethanolamine salt (average molecular weight 150,000) G: sodium of formalin condensate of naphthalenesulfonic acid Salt (molecular weight 5000) H: polyoxyethylene monobutyl ether (average number of moles of oxyethylene added: 2 mol) I: sodium ethylenediaminetetraacetate J: ammonium aminotrimethylenephosphonate
【００２７】なお、前記化合物Ａ〜Ｊは、いずれも、25
℃のイオン交換水100gに１g 以上溶解するものであっ
た。The compounds A to J are all 25
It dissolved in an amount of 1 g or more in 100 g of ion-exchanged water at ℃.
【００２８】[0028]
【表１】 [Table 1]
【００２９】表１に示された結果から、実施例１〜９で
得られた洗浄剤組成物は、いずれも、アニオン性界面活
性剤を含有するので、良好な洗浄性を示す。中でも、実
施例２〜４、６〜７及び９で得られた洗浄剤組成物は、
−ＣＯＯＲ1 又は−ＳＯ3 Ｒ 1 （Ｒ1 は塩基を示す）で
表される基を５以上有し、分子量が500 以上のアニオン
性界面活性剤（化合物Ｃ〜Ｇ）を含有するので、優れた
洗浄性を示す。From the results shown in Table 1, in Examples 1 to 9,
Each of the obtained detergent compositions has an anionic surfactant.
Since it contains a surfactant, it shows good cleaning properties. Among them, the real
The cleaning compositions obtained in Examples 2 to 4, 6 to 7 and 9 are:
-COOR1Or -SOThreeR 1(R1Indicates a base)
Anion having 5 or more groups represented and a molecular weight of 500 or more
Since it contains a surfactant (compounds C to G), it is excellent
Shows detergency.
【００３０】また、実施例５で得られた洗浄剤組成物
は、キレート剤を含有しているので、アニオン性界面活
性剤を単独で使用した洗浄剤組成物（実施例１）と対比
して、洗浄性に優れていることがわかる。また、実施例
９で得られた洗浄剤組成物には、非イオン性界面活性剤
（化合物Ｈ）が含有されているので、アニオン性界面活
性剤を単独で使用した洗浄剤組成物（実施例１）と対比
して洗浄性に優れていることがわかる。Further, since the detergent composition obtained in Example 5 contains a chelating agent, it is compared with the detergent composition using only an anionic surfactant (Example 1). It can be seen that the cleaning properties are excellent. Further, since the detergent composition obtained in Example 9 contains a nonionic surfactant (Compound H), the detergent composition containing an anionic surfactant alone (Example It can be seen that the detergency is superior to 1).
【００３１】[0031]
【発明の効果】本発明の洗浄剤組成物は、研磨時に使用
した研磨パッド等のパッドからの付着物の除去効果に極
めて優れており、パッドの汚染に伴う研磨の生産性低下
や被研磨材の製品品質低下を防止し、生産性向上及び品
質の向上を図るという優れた効果を奏する。The cleaning composition of the present invention has an excellent effect of removing extraneous matter from a pad such as a polishing pad used at the time of polishing. This has the excellent effect of preventing the deterioration of the product quality and improving the productivity and the quality.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 橋本 良一 和歌山市湊1334番地 花王株式会社研究所 内 (72)発明者 藤井 滋夫 和歌山市湊1334番地 花王株式会社研究所 内 Ｆターム(参考） 3C058 AA07 AA19 AC01 4H003 AA02 AB19 AB24 AB31 AB44 DA14 DA15 DB01 EB16 EB24 EB28 EB30 EB32 ED29 FA15 ────────────────────────────────────────────────── ─── Continuing from the front page (72) Ryoichi Hashimoto, 1334 Minato, Wakayama City, Kao Corporation Research Institute (72) Inventor Shigeo Fujii, 1334 Minato, Wakayama City, Kao Corporation F-term (reference) 3C058 AA07 AA19 AC01 4H003 AA02 AB19 AB24 AB31 AB44 DA14 DA15 DB01 EB16 EB24 EB28 EB30 EB32 ED29 FA15
Claims (4)
研磨に使用されるパッド用洗浄剤組成物。1. A composition comprising an anionic surfactant,
A cleaning composition for a pad used for polishing.
ＯＯＲ及び−ＳＯ3Ｒ（Ｒは水素原子、無機塩基または
有機塩基を示す）からなる群より選ばれた基を１種以上
有する化合物である請求項１記載の洗浄剤組成物。2. An anionic surfactant containing -C in a molecule.
OOR and -SO 3 R (R is a hydrogen atom, an inorganic or organic base showing a) detergent composition according to claim 1, wherein the compound having one or more than selected group the group consisting of.
は水素原子、無機塩基または有機塩基を示す）からなる
群より選ばれた基を５個以上含み、25℃の水100gに対す
る溶解度が0.05g 以上で、かつ分子量500 〜30万を有す
る化合物である請求項１又は２記載の洗浄剤組成物。3. A compound having —COOR and —SO 3 R (R
Is a compound containing 5 or more groups selected from the group consisting of hydrogen atoms, inorganic bases and organic bases, having a solubility in 100 g of water at 25 ° C. of 0.05 g or more and a molecular weight of 500 to 300,000. The cleaning composition according to claim 1.
物を用いて研磨に使用されるパッドを洗浄する洗浄方法4. A cleaning method for cleaning a pad used for polishing using the cleaning composition according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11798699A JP4322998B2 (en) | 1999-04-26 | 1999-04-26 | Cleaning composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11798699A JP4322998B2 (en) | 1999-04-26 | 1999-04-26 | Cleaning composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000309796A true JP2000309796A (en) | 2000-11-07 |
| JP4322998B2 JP4322998B2 (en) | 2009-09-02 |
Family
ID=14725201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11798699A Expired - Fee Related JP4322998B2 (en) | 1999-04-26 | 1999-04-26 | Cleaning composition |
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| Country | Link |
|---|---|
| JP (1) | JP4322998B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6740629B2 (en) | 2001-06-13 | 2004-05-25 | Jsr Corporation | Composition for washing a polishing pad and method for washing a polishing pad |
| JP2004253696A (en) * | 2003-02-21 | 2004-09-09 | Speedfam Co Ltd | Method and device for semiconductor processing |
| JP2006351081A (en) * | 2005-06-14 | 2006-12-28 | Fuji Electric Holdings Co Ltd | Grinding method of magnetic disk substrate |
| JP2007016110A (en) * | 2005-07-06 | 2007-01-25 | Adeka Corp | Detergent composition for chemomechanical polishing and deterging method using the same detergent composition |
| JP2011071215A (en) * | 2009-09-24 | 2011-04-07 | Toshiba Corp | Polishing method and semiconductor-device manufacturing method |
| US8324143B2 (en) | 2008-12-19 | 2012-12-04 | Sanyo Chemical Industries, Ltd. | Cleaning agent for electronic materials |
| US8506723B2 (en) | 2010-02-16 | 2013-08-13 | Kao Corporation | Alkaline detergent composition for use on hard surfaces |
| JP2020131354A (en) * | 2019-02-19 | 2020-08-31 | 株式会社ディスコ | Circulation system of working liquid |
| CN113862683A (en) * | 2021-11-01 | 2021-12-31 | 长沙永安新材料有限公司 | Cleaning agent and cleaning process for stainless steel polishing wax |
-
1999
- 1999-04-26 JP JP11798699A patent/JP4322998B2/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6740629B2 (en) | 2001-06-13 | 2004-05-25 | Jsr Corporation | Composition for washing a polishing pad and method for washing a polishing pad |
| JP2004253696A (en) * | 2003-02-21 | 2004-09-09 | Speedfam Co Ltd | Method and device for semiconductor processing |
| JP4499365B2 (en) * | 2003-02-21 | 2010-07-07 | スピードファム株式会社 | Semiconductor processing method |
| JP2006351081A (en) * | 2005-06-14 | 2006-12-28 | Fuji Electric Holdings Co Ltd | Grinding method of magnetic disk substrate |
| JP4560789B2 (en) * | 2005-06-14 | 2010-10-13 | 富士電機デバイステクノロジー株式会社 | Polishing method of magnetic disk substrate |
| JP2007016110A (en) * | 2005-07-06 | 2007-01-25 | Adeka Corp | Detergent composition for chemomechanical polishing and deterging method using the same detergent composition |
| US8324143B2 (en) | 2008-12-19 | 2012-12-04 | Sanyo Chemical Industries, Ltd. | Cleaning agent for electronic materials |
| JP2011071215A (en) * | 2009-09-24 | 2011-04-07 | Toshiba Corp | Polishing method and semiconductor-device manufacturing method |
| US8506723B2 (en) | 2010-02-16 | 2013-08-13 | Kao Corporation | Alkaline detergent composition for use on hard surfaces |
| JP2020131354A (en) * | 2019-02-19 | 2020-08-31 | 株式会社ディスコ | Circulation system of working liquid |
| JP7337442B2 (en) | 2019-02-19 | 2023-09-04 | 株式会社ディスコ | Machining fluid circulation system |
| CN113862683A (en) * | 2021-11-01 | 2021-12-31 | 长沙永安新材料有限公司 | Cleaning agent and cleaning process for stainless steel polishing wax |
| CN113862683B (en) * | 2021-11-01 | 2024-02-09 | 长沙永安新材料有限公司 | Cleaning agent and cleaning process for stainless steel polishing wax |
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