JP2000309776A - Low-voltage blue-emitting phosphor and its production - Google Patents

Low-voltage blue-emitting phosphor and its production

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Publication number
JP2000309776A
JP2000309776A JP2000071010A JP2000071010A JP2000309776A JP 2000309776 A JP2000309776 A JP 2000309776A JP 2000071010 A JP2000071010 A JP 2000071010A JP 2000071010 A JP2000071010 A JP 2000071010A JP 2000309776 A JP2000309776 A JP 2000309776A
Authority
JP
Japan
Prior art keywords
low
matrix
phosphor
zno
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000071010A
Other languages
Japanese (ja)
Inventor
Il Yu
一 劉
Yosan Ryu
容贊 劉
Mi-Ran Song
美蘭 宋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung SDI Co Ltd
Original Assignee
Samsung SDI Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung SDI Co Ltd filed Critical Samsung SDI Co Ltd
Publication of JP2000309776A publication Critical patent/JP2000309776A/en
Withdrawn legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/54Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing zinc or cadmium
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/74Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing arsenic, antimony or bismuth
    • C09K11/7407Chalcogenides
    • C09K11/7414Chalcogenides with zinc or cadmium

Abstract

PROBLEM TO BE SOLVED: To provide a low-voltage blue-emitting phosphor with an increased luminance and a process for producing the same. SOLUTION: This phosphor comprises a ZnO.Ga2O3 matrix and Bi with which the matrix is doped. The process comprises the steps of: mixing ZnO, Ga2O3, a Bi compound and a flux; subjecting the mixture to the primary firing at 1,100-1,300; milling the substance subjected to the primary firing; washing the milled substance with an acid; subjecting the washed substance to the secondary firing at 800-1,100 deg.C; and classifying the substance subjected to the secondary firing.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は低電圧用青色蛍光体
及びその製造方法に係り,より詳しくは輝度を向上させ
た低電圧用青色蛍光体及びその製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low-voltage blue phosphor and a method of manufacturing the same, and more particularly, to a low-voltage blue phosphor with improved brightness and a method of manufacturing the same.

【0002】[0002]

【従来の技術】真空蛍光ディスプレイ装置,フィールド
エミッションディスプレイ(Field Emissi
on Display)装置などの低電圧駆動装置用青
色蛍光体としてはZnS:Zn蛍光体が主に使用されて
いる。この蛍光体は初期輝度が優秀であるが,寿命が短
いという問題点を有する。このため,この蛍光体の代わ
りに,初期輝度は多少低いが寿命が長く,かつ輝度残存
率が優秀な酸化物系統の蛍光体を使用するのが最近の趨
勢である。
2. Description of the Related Art Vacuum fluorescent display devices and field emission displays (Field Emissi)
As a blue phosphor for a low-voltage driving device such as an on-display device, a ZnS: Zn phosphor is mainly used. Although this phosphor has an excellent initial luminance, it has a problem that its life is short. Therefore, instead of this phosphor, a recent trend is to use an oxide-based phosphor having a slightly lower initial luminance but a longer life and an excellent luminance retention rate.

【0003】その中でもジンクガレート(zinc g
allate)蛍光体は相対的に輝度が優秀であり,安
定した青色を有するので注目を浴びている。このジンク
ガレート蛍光体は付活剤(activator)を使用
しなくても発光する自発光(self−activat
ion)蛍光体である。
[0003] Among them, zinc gallate (zinc g)
The phosphor has attracted attention because of its relatively excellent brightness and stable blue color. The zinc-gallate phosphor emits light without using an activator (self-activator).
ion) It is a phosphor.

【0004】前記ジンクガレート蛍光体を製造する方法
を図2を参照して説明する。ZnO,Ga及び融
剤(flux)であるLiPOを混合する。次い
で,この混合物を大気雰囲気下の1200℃で3時間程
度,1次焼成する。1次焼成した母体材料(マトリック
ス)をミリング,好ましくはボールミリングし,これに
より凝集された母体材料(マトリックス)の粒子を均一
に分散させる。余分なLiPOを除去するために分
散させた母体材料(マトリックス)の粒子を硝酸で洗浄
する。洗浄した母体材料(マトリックス)を還元雰囲気
下の1100℃で1〜3時間,2次焼成する。2次焼成
した母体材料(マトリックス)をふるい(sieve)
を使用して分級して低電圧用青色蛍光体を製造する。
A method of manufacturing the zinc gallate phosphor will be described with reference to FIG. ZnO, Ga 2 O 3 and Li 3 PO 4 as a flux are mixed. Next, this mixture is primarily baked at 1200 ° C. in an air atmosphere for about 3 hours. The primary-fired base material (matrix) is milled, preferably ball-milled, whereby the aggregated particles of the base material (matrix) are uniformly dispersed. The particles of the matrix (matrix) dispersed to remove excess Li 3 PO 4 are washed with nitric acid. The washed base material (matrix) is secondarily fired at 1100 ° C. in a reducing atmosphere for 1 to 3 hours. Sieve the secondary fired base material (matrix)
To produce a blue phosphor for low voltage.

【0005】[0005]

【発明が解決しようとする課題】しかしながら,前記ジ
ンクガレート蛍光体は付活剤を使用しないため,輝度が
満足な水準に達していないという問題があった。
However, since the zinc gallate phosphor does not use an activator, there is a problem that the brightness does not reach a satisfactory level.

【0006】本発明は前記問題点を解決するためのもの
であって,本発明の目的は輝度を増加させた低電圧用青
色蛍光体を提供することにある。また,本発明の他の目
的は前記低電圧用青色蛍光体の製造方法を提供すること
にある。
SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a low-voltage blue phosphor with increased luminance. Another object of the present invention is to provide a method for manufacturing the low voltage blue phosphor.

【0007】[0007]

【課題を解決するための手段】上記課題を解決するため
に,本発明は,請求項1に記載のように,ZnO・Ga
母体材料(マトリックス)と,前記母体材料(マ
トリックス)にドーピングされたBiと,を含むことを
特徴とする低電圧用青色蛍光体を提供する。これによ
り,輝度を増加させることができる。その際に,請求項
2に記載のように,前記青色蛍光体はCIE色座標系上
におけるx,y座標がx=0.20±0.005,y=
0.025±0.005であることが好ましい。
In order to solve the above-mentioned problems, the present invention provides a ZnO.Ga
A blue phosphor for low voltage, comprising: a 2 O 3 base material (matrix); and Bi doped into the base material (matrix). As a result, the luminance can be increased. At this time, as described in claim 2, the blue phosphor has x and y coordinates on a CIE color coordinate system of x = 0.20 ± 0.005, y =
It is preferably 0.025 ± 0.005.

【0008】また,本発明の別の観点によれば,請求項
3に記載のように,ZnO,Ga,Bi系化合物
及び融剤を混合する段階と,前記混合物を1100〜1
300℃で1次焼成する段階と,前記1次焼成された物
質をミリングする段階と,前記ミリングした物質を酸で
洗浄する段階と,前記洗浄した物質を800〜1100
℃で2次焼成する段階と,前記2次焼成された物質を分
級する段階と,を含むことを特徴とする低電圧用青色蛍
光体の製造方法が提供される。前記Bi系化合物は,請
求項4に記載のように,Bi及びBiClから
なる群から選択することができる。なお,請求項5に記
載のように,前記Bi系化合物の量はZnO1モル当り
0.001〜0.1モルであることが好ましい。
According to another aspect of the present invention, as in claim 3, a step of mixing ZnO, Ga 2 O 3 , a Bi-based compound and a flux, and the step of mixing the mixture with 1100-1.
First firing at 300 ° C., milling the first fired material, washing the milled material with an acid, and removing the washed material from 800 to 1100.
A method for manufacturing a low-voltage blue phosphor, comprising: performing a second baking at a temperature of about C .; and classifying the second-baked material. The Bi-based compound as claimed in claim 4, can be selected from the group consisting of Bi 2 O 3 and BiCl 3. It is preferable that the amount of the Bi-based compound is 0.001 to 0.1 mol per 1 mol of ZnO.

【0009】[0009]

【発明の実施の形態】以下,本発明の実施の形態を詳細
に説明する。本発明に係る低電圧用青色蛍光体はZnO
・Ga母体材料(マトリックス)と付活剤である
Biとから構成される。このような低電圧用青色蛍光体
を製造する方法を図1に基づいて詳しく説明する。
Embodiments of the present invention will be described below in detail. The blue phosphor for low voltage according to the present invention is ZnO
· Ga 2 O 3 comprised Bi to be an activator and the base material (matrix). A method of manufacturing such a low-voltage blue phosphor will be described in detail with reference to FIG.

【0010】ZnO,Ga,Bi系化合物及び融
剤(flux)を混合する。この時,ZnO及びGa
は同一モル量を使用することができる。Bi系化合
物としてはBi又はBiClを使用することが
できる。使用するBi系化合物の量は,後工程で製造さ
れるZnO・Ga母体材料(マトリックス)1モ
ル当り0.001〜0.1モル%であることが好まし
い。本実施の形態では,ZnOとGaとは同一の
モル量で反応して同一モル量のZnO・Ga 母体
材料(マトリックス)が生成される。したがって,Bi
系化合物はZnOの1モル当り0.001〜0.1モル
%を使用すればよい。
[0010] ZnO, Ga2O3, Bi-based compounds and melts
Mix the agent (flux). At this time, ZnO and Ga2
O3Can use the same molar amount. Bi-based compound
The thing is Bi2O3Or BiCl3Can be used
it can. The amount of Bi-based compound used is determined in the later process.
ZnO / Ga2O3Base material (matrix) 1 m
0.001 to 0.1 mol% per mole
No. In the present embodiment, ZnO and Ga2O3Is the same as
React in the same molar amount to obtain the same molar amount of ZnO.Ga2O 3Mother
A material (matrix) is generated. Therefore, Bi
0.001-0.1 mol per mol of ZnO
% Should be used.

【0011】前記混合物を1100〜1300℃で1次
焼成する。この時,焼成工程の条件を大気雰囲気下で温
度約1200℃とする場合には,約3時間程度焼成工程
を実施する。この焼成工程によってZnO・Ga
母体材料(マトリックス)が形成され,この母体材料
(マトリックス)内にBiが浸透して,母体材料(マト
リックス)内にBi3+形態で存在する。
The above mixture is primarily fired at 1100 to 1300 ° C. At this time, when the firing process is performed at a temperature of about 1200 ° C. in an air atmosphere, the firing process is performed for about 3 hours. By this firing step, ZnO.Ga 2 O 3
A matrix material (matrix) is formed, and Bi penetrates into the matrix material (matrix) and exists in the matrix material (matrix) in a Bi 3+ form.

【0012】次いで,前記1次焼成物をミリング(mi
lling)する。凝集した粒子を除去し,分散性及び
粒度分布を向上させるために約3時間ボールミル(ba
ll−mill)を実施するのが好ましい。
Next, the primary fired product is milled (mi).
ling). Ball mill (ba) for about 3 hours to remove agglomerated particles and improve dispersibility and particle size distribution
It is preferred to carry out (ll-mill).

【0013】ミリングした物質を約0.5Nの硝酸又は
約1%濃度の塩酸で洗浄する。この工程によって余剰な
量の融剤を除去することができる。
The milled material is washed with about 0.5N nitric acid or about 1% hydrochloric acid. By this step, an excessive amount of the flux can be removed.

【0014】硝酸又は塩酸で洗浄した物質を800〜1
100℃で2次焼成する。この時,焼成工程は酸素が欠
乏した雰囲気を作り伝導度に寄与するように還元雰囲気
下の約1100℃で約2時間程度実施するのが好まし
い。この2次焼成工程によってジンクガレート蛍光体の
結晶性が増加して蛍光体の発光効率が向上する。
The material washed with nitric acid or hydrochloric acid is 800 to 1
Secondary baking at 100 ° C. At this time, the baking process is preferably performed at about 1100 ° C. for about 2 hours under a reducing atmosphere so as to create an oxygen-deficient atmosphere and contribute to conductivity. This secondary firing step increases the crystallinity of the zinc gallate phosphor and improves the luminous efficiency of the phosphor.

【0015】このように2次焼成した物質をふるい(s
ieve)を使用して分級することにより低電圧用青色
蛍光体を製造する。
The secondary fired material is sieved (s)
iv) to produce a blue phosphor for low voltage.

【0016】製造された低電圧用青色蛍光体はCIE色
座標系上におけるx,y座標が,x=0.20±0.0
5,y=0.25±0.05である。
The manufactured low-voltage blue phosphor has x and y coordinates of x = 0.20 ± 0.00 on the CIE color coordinate system.
5, y = 0.25 ± 0.05.

【0017】前記方法によって製造された低電圧用蛍光
体はZnO・Ga母体材料(マトリックス)と付
活剤であるBiとから構成される。付活剤として作用す
るBiは,前記母体材料(マトリックス)上にBi3+
イオンとして存在し,常温で S遷移に起因す
る青色の発光領域を有する。光学的バンド幅(band
gap)が4.4eVであるZnGa蛍光体の
発光は,Bi3+が添加された時にはBi3+はZnG
内にドーピングされているため,外部の刺激に
よるZnGa蛍光体の発光と母体からのエネルギ
ー伝達によるBi3+による発光に起因して現われる。
The low-voltage fluorescent light produced by the above method.
The body is ZnO.Ga2O3With matrix material (matrix)
It is composed of Bi as an active agent. Acts as an activator
Bi on the base material (matrix)3+
Exists as an ion at room temperature 3P11Due to S transition
Blue light emitting region. Optical bandwidth (band)
 gap) is 4.4 eV.2O4Phosphor
Light emission is Bi3+When Bi is added3+Is ZnG
a2O4Doping inside, so it is not
ZnGa2O4Phosphor emission and energy from matrix
-Bi by transmission3+Appear due to the emission of light.

【0018】本発明による青色蛍光体の青色発光スペク
トルの強度はBi3+S遷移に起因するB
3+濃度変化によって変化する。従って,青色発光ス
ペクトルの強度の中の最大発光強度はZnGa
自己遷移の確率とBi3+イオンにエネルギーが伝達さ
れる確率とが高い時に得ることができる。
The intensity of the blue emission spectrum of the blue phosphor according to the present invention is the intensity of B due to the 3 P 11 S transition of Bi 3+.
It changes with i 3+ concentration change. Therefore, the maximum emission intensity in the intensity of the blue emission spectrum can be obtained when the probability of self-transition of ZnGa 2 O 4 and the probability of energy transfer to Bi 3+ ions are high.

【0019】次は本発明の理解を助けるための好ましい
実施例を提示する。しかし,下記の実施例は本発明をよ
り容易に理解するために提供されるものにすぎず,本発
明が下記の実施例に限定されるわけではない。実施例1 ZnO1モル,Ga1モル,過剰のLiPO
及びBi0.001モルを混合した後,大気雰囲
気下の1200℃で3時間,1次焼成した。焼成した物
質に3時間程度ボールミルを実施した後に0.5Nの硝
酸で洗浄した。酸で洗浄した物質を還元雰囲気下の11
00℃で2時間,2次焼成した。焼成した物質を分級し
て低電圧用青色蛍光体を製造した。
The following are preferred to aid in understanding the invention.
An example is provided. However, the following examples illustrate the invention.
It is only provided for easy understanding.
The invention is not limited to the following embodiments.Example 1  1 mol ZnO, Ga2O31 mole, excess Li3PO4
And Bi2O3After mixing 0.001 mol, atmosphere atmosphere
Primary baking was performed at 1200 ° C. for 3 hours. Fired thing
After performing a ball mill for about 3 hours,
Washed with acid. The acid-washed material is removed under a reducing atmosphere.
Secondary baking was performed at 00 ° C. for 2 hours. Classify the calcined material
To produce a low-voltage blue phosphor.

【0020】実施例2 Biを0.005モル使用したこと以外は前記実
施例1と同様に実施した。
[0020]Example 2  Bi2O3Except that 0.005 mol was used.
It carried out similarly to Example 1.

【0021】実施例3 Biを0.01モル使用したこと以外は前記実施
例1と同様に実施した。
[0021]Example 3  Bi2O3Except that 0.01 mol was used.
Performed as in Example 1.

【0022】前記実施例1ないし3の方法によって製造
された低電圧用青色蛍光体と従来のZnGa蛍光
体を利用してVFD(Vacuum Fluoresc
ent Display)を製造した後,50Vで駆動
して輝度を測定した。測定した従来の蛍光体の輝度を1
00に換算した時の相対輝度を下記表1に示す。
The VFD (Vacuum Fluorescent) is obtained by using the blue phosphor for low voltage manufactured according to the method of the first to third embodiments and the conventional ZnGa 2 O 4 phosphor.
ent Display), and driven at 50V to measure the luminance. Measured luminance of conventional phosphor is 1
Table 1 below shows the relative luminance when converted to 00.

【0023】[0023]

【表1】 [Table 1]

【0024】以上,添付図面を参照しながら本発明にか
かる好適な実施形態について説明したが,本発明はかか
る例に限定されないことは言うまでもない。当業者であ
れば,特許請求の範囲に記載された技術的思想の範疇内
において,各種の変更例または修正例に想到し得ること
は明らかであり,それらについても当然に本発明の技術
的範囲に属するものと了解される。
Although the preferred embodiment according to the present invention has been described with reference to the accompanying drawings, it goes without saying that the present invention is not limited to such an example. It is clear that a person skilled in the art can conceive various changes or modifications within the scope of the technical idea described in the claims, and it is obvious that the technical scope of the present invention is not limited thereto. It is understood that it belongs to.

【0025】[0025]

【発明の効果】以上,詳細に説明したように本発明によ
れば,従来の自発光蛍光体であるZnGaに付活
剤(activator)としてBi系化合物を添加す
ることにより,従来の蛍光体に比べ,輝度が15%以上
増加し発光効率に優れた低電圧表示装置を提供すること
が可能になる。
As described above in detail, according to the present invention, the conventional self-luminous phosphor, ZnGa 2 O 4 , is added with a Bi-based compound as an activator, whereby the conventional light-emitting phosphor is activated. Compared with the phosphor, it is possible to provide a low-voltage display device in which the luminance is increased by 15% or more and the luminous efficiency is excellent.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明の一実施例による低電圧用青色蛍光体
の製造工程を示した流れ図である。
FIG. 1 is a flowchart illustrating a process of manufacturing a low-voltage blue phosphor according to an embodiment of the present invention.

【図2】 従来の低電圧用青色蛍光体の製造工程を示し
た流れ図である。
FIG. 2 is a flowchart showing a process of manufacturing a conventional low-voltage blue phosphor.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01J 31/12 H01J 31/12 C 31/15 31/15 E (72)発明者 宋 美蘭 大韓民国京畿道水原市勸善区勸善洞(番地 なし)ソンジアパート105棟802号──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification FI FI Theme Court ゛ (Reference) H01J 31/12 H01J 31/12 C 31/15 31/15 E (72) Inventor Song Melan Suwon, Gyeonggi-do, Republic of Korea No. 802, 105, Songji Apartment, No. 2

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 ZnO・Ga母体材料(マトリッ
クス)と,前記母体材料(マトリックス)にドーピング
されたBiと,を含むことを特徴とする低電圧用青色蛍
光体。
1. A low-voltage blue phosphor, comprising: a ZnO.Ga 2 O 3 host material (matrix); and Bi doped into the host material (matrix).
【請求項2】 前記青色蛍光体はCIE色座標系上にお
けるx,y座標がx=0.20±0.005,y=0.
025±0.005であることを特徴とする請求項1に
記載の低電圧用青色蛍光体。
2. The blue phosphor has x and y coordinates of x = 0.20 ± 0.005, y = 0.5 on a CIE color coordinate system.
2. The low-voltage blue phosphor according to claim 1, wherein the value is 025 ± 0.005.
【請求項3】 ZnO,Ga,Bi系化合物及び
融剤を混合する段階と,前記混合物を1100〜130
0℃で1次焼成する段階と,前記1次焼成された物質を
ミリングする段階と,前記ミリングした物質を酸で洗浄
する段階と,前記洗浄した物質を800〜1100℃で
2次焼成する段階と,前記2次焼成された物質を分級す
る段階と,を含むことを特徴とする低電圧用青色蛍光体
の製造方法。
3. A step of mixing ZnO, Ga 2 O 3 , a Bi-based compound and a flux, and mixing the mixture with 1100 to 130.
First firing at 0 ° C., milling the first fired material, washing the milled material with an acid, and second firing the washed material at 800 to 1100 ° C. And a step of classifying the second-fired material.
【請求項4】 前記Bi系化合物はBi及びBi
Clからなる群から選択されることを特徴とする請求
項3に記載の低電圧用青色蛍光体の製造方法。
4. The Bi-based compound is composed of Bi 2 O 3 and Bi
Method for producing a low-voltage blue phosphor according to claim 3, characterized in that it is selected from the group consisting of Cl 3.
【請求項5】 前記Bi系化合物の量はZnO1モル当
り0.001〜0.1モルであることを特徴とする請求
項3または4に記載の低電圧用青色蛍光体の製造方法。
5. The method according to claim 3, wherein the amount of the Bi-based compound is 0.001 to 0.1 mol per 1 mol of ZnO.
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* Cited by examiner, † Cited by third party
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JP2003292950A (en) * 2002-04-04 2003-10-15 Matsushita Electric Ind Co Ltd Fluorescent substance and method of producing the same
JP2005255885A (en) * 2004-03-12 2005-09-22 National Institute For Materials Science Phosphor and its manufacturing method
JP2007039293A (en) * 2005-08-05 2007-02-15 Idemitsu Kosan Co Ltd Method for producing oxide powder of zinc-based metal

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KR20010103846A (en) * 2000-04-26 2001-11-24 김순택 A red emitting phosphor for low-voltage applications and a method of preparing the same
KR20030025354A (en) * 2001-09-20 2003-03-29 한국과학기술연구원 Fabrication method of blue light emitting ZnO thin film phosphor
CN103540315A (en) * 2013-10-14 2014-01-29 昆明理工大学 Ultraviolet-excited bismuth-doped zinc gallate blue long-afterglow luminescent powder
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003292950A (en) * 2002-04-04 2003-10-15 Matsushita Electric Ind Co Ltd Fluorescent substance and method of producing the same
JP2005255885A (en) * 2004-03-12 2005-09-22 National Institute For Materials Science Phosphor and its manufacturing method
JP2007039293A (en) * 2005-08-05 2007-02-15 Idemitsu Kosan Co Ltd Method for producing oxide powder of zinc-based metal

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