JP2000306498A - Manufacture of charged particle emitting device and manufacture of field emission display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electron emitting source having a long life, used for a large and very thin high definition display device and capable of being driven at a low voltage. SOLUTION: In an electron emitting source, plural strip cathode electrode lines 2 are formed on a lower base 1 of a glass material for instance, a thin film 7 is formed on it, an insulating layer 3 is filmed on it, and plural strip gate power lines 4 are also formed on it so as to cross the cathode electrode lines 2, in order to form a matrix structure. Although each cathode electrode line 2 and each gate electrode line 4 is drivingly controlled by being connected to a means of control 15 respectively, many almost circular holes 5 penetrating through the gate electrode line 4 and the insulating layer 3 and reaching the thin film 7 are formed in each crossing area 9. The thin film 7 to form a cold cathode is formed into a film by laser ablation of a target base having carbon as a main ingredient while a designated potential is being applied to the cathode electrode line 2, and forms the cold cathode.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a method for manufacturing a charged particle emission device (for example, an electron emission source suitable for use in an ultra-thin display device), and a field emission display device using the same. .

[0002]

2. Description of the Related Art In general, for example, as an ultra-thin display device, an electron emission source is provided inside a screen, and a number of microchips made of an electron emission material are formed in each pixel region thereof, in response to a predetermined electric signal. In addition, a device has been devised in which a fluorescent screen of a screen is illuminated by exciting a microchip in a corresponding pixel region.

This electron emission source is provided with a plurality of strip-shaped cathode electrode lines, and a plurality of strip-shaped gate electrode lines intersecting the cathode electrode lines above the cathode electrode lines. Each intersection region between the cathode electrode line and the gate electrode line forms one pixel.

Next, the electron emission source and the display device will be described with reference to FIGS. 7 and 8.

According to the conventional electron emission source, as shown in FIG. 7, a plurality of strip-shaped cathode electrode lines 22 are formed on the surface of a lower substrate 21 made of, for example, a glass material. An insulating layer 23 is formed thereon, and a plurality of strip-shaped gate electrode lines 24 are formed on the insulating layer 23 so as to intersect with the respective cathode electrode lines 22. are doing. Each of the cathode electrode lines 22 and each of the gate electrode lines 24 are connected to a control unit 25 and are driven and controlled.

In each intersection region between the cathode electrode line 22 and the gate electrode line 24, the gate electrode line 2
A large number of fine holes 26 are formed penetrating through the electrode layer 4 and the insulating layer 23 to reach the cathode electrode line 22, and a microchip 27 is provided on the surface of the cathode electrode line 22 which is the bottom of these holes 26. This microchip 27 constitutes a cold cathode.

[0007] These microchips 27 are made of an electron emitting material, for example, molybdenum, and are formed in a substantially conical shape. The tip of the cone of each microchip 27 is located substantially at the height of an electron passing gate 24 a formed in the gate electrode line 24. As described above, a pixel region provided with a large number of microchips 27 is formed in a region where the cathode electrode line 22 intersects with the gate electrode line 24, and each pixel region corresponds to one pixel (pixel). I have.

In the electron emission source 12 configured as described above, a predetermined cathode electrode line 22 and a predetermined gate electrode line 24 are selected by the control means 25, and a predetermined voltage is applied between the two. 22
A predetermined electric field is generated between the intersection area of the gate electrode line 24 and the gate section 24a, that is, all the microchips 27 in the pixel area, and electrons are emitted from the tip of the microchip 27 by a tunnel effect. In this case, when the material of the microchip 27 is molybdenum, the applied voltage is set to a voltage value at which the strength of the electric field near the tip of the cone of the microchip 27 becomes about 10 ⁸ to 10 ¹⁰ V / m. I do.

FIG. 8 shows an example of a display device 20 using the electron emission source 12.

The display device 20 is provided with a panel member on which the above-mentioned electron emission source 12 is arranged so as to constitute a screen, and an upper substrate 28 arranged on this member at a predetermined interval in the electron emission direction. ing. In the upper substrate 28, a phosphor screen 29 coated with a band-shaped phosphor parallel to the cathode electrode line 24 is formed at a position facing the electron emission source 12.
The space between the fluorescent screen 29 and the fluorescent screen 29 is kept in a vacuum.

Next, the operation of the display device 20 will be described. In the electron emission source 12 in a predetermined pixel region constituting a pixel, a cathode electrode line 22 and a gate electrode line 2 having an intersection region corresponding to the electron emission source 12 are provided.
4 is selected by the control means 25 and a predetermined voltage is applied. As a result, the electron emission source 12 is excited, electrons are emitted from the microchip 27 of the electron emission source 12, and the electrons are emitted by a voltage applied between the cathode electrode line 22 and the upper substrate 28 which is an anode. Is accelerated and collides with the phosphor on the phosphor screen 29 to emit visible light,
An image is formed.

[0012]

However, in the manufacturing process of the microchip 27, the microchip 27 and the gate electrode line 24 are connected to each other by a small piece of the metal film peeled off at the time of lift-off. There is a case where the electrode chip 24 is short-circuited and the microchip 27 is broken.

The gate electrode line 24 and the fluorescent screen 29
It has been known that ions existing in the high vacuum region between the two sputter the microchip 27 and shorten the life of the display.

Accordingly, it is an object of the present invention to provide a low-voltage drive, a long life, a high definition, and an electron emission source such as an electron emission source capable of forming a large ultra-thin display device. An object of the present invention is to provide a method for manufacturing a particle emission device and a method for manufacturing a field emission display device using the charged particle emission device.

[0015]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and has a step of forming a first electrode (for example, a cathode electrode line on a substrate: the same applies hereinafter) on a substrate; While applying a predetermined potential to the first electrode,
The target material mainly composed of carbon is irradiated with a laser beam to fly the target material, and the thin film (in particular, a diamond-like carbon thin film having a good ability to emit charged particles such as electrons: the same applies hereinafter) is formed on the first electrode. Forming a film, forming an insulating layer covering the substrate, the first electrode line, and the thin film, and forming a second electrode (for example, a gate electrode line: hereinafter) crossing the first electrode on the insulating layer. And similar)
And forming a substantially circular or slit-shaped fine hole reaching the thin film through the second electrode and the insulating layer in a region where the first electrode and the second electrode intersect. And a manufacturing method of a charged particle emission device for manufacturing, for example, an electron emission source having a cold cathode through these steps.

The present invention also includes a step of forming a first electrode on a substrate, and a step of applying a predetermined potential to the first electrode.
Irradiating a target mainly composed of carbon with a laser beam to fly a target material to form a thin film on the first electrode; and forming an insulating layer covering the base, the first electrode, and the thin film. Forming a second electrode intersecting the first electrode on the insulating layer;
Forming a substantially circular or slit-shaped fine hole reaching the thin film through the second electrode and the insulating layer in a region where the electrode and the second electrode intersect with each other. Device (for example, an electron emission source having a cold cathode:
A light emitting surface (for example, a fluorescent surface: the same applies hereinafter) is disposed at a position facing the charged particle emission device, and charged particles (for example, the cold cathode) emitted from the charged particle emission device (for example, the cold cathode). For example, the present invention also provides a method for manufacturing a field emission display device, which manufactures a display device that emits light from the light-emitting surface using electrons: the same applies hereinafter.

According to each of the manufacturing methods of the charged particle emission device and the field emission display device of the present invention, a charged particle emission source is formed by the fine holes penetrating the second electrode and the insulating layer and reaching the thin film. At this time, while applying a predetermined potential to the first electrode, a target mainly composed of carbon is irradiated with a laser beam to fly the target material, and the thin film is formed. Since the formed thin film generates an emission in a low electric field, low voltage driving is possible. In addition, since the thin film formed as described above is made of diamond-like carbon, it is hard to be sputtered by ions, so that stable emission can be maintained for a long time.

Further, since the peeling layer is not formed during the manufacturing process as in the prior art, there is no short circuit between the first electrode and the second electrode, the defect rate can be reduced, and the number of manufacturing steps can be reduced. And because the structure of the charged particle emission source is simple,
Large ultra-thin display devices can be configured,
In addition, since the spread of the discharged charged particles is small, high definition can be achieved.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In the manufacturing method of the present invention, the thin film is preferably formed using a target mainly composed of graphite. Examples of the laser to be used include an excimer laser and an Nd: YAG laser, and the wavelength is 193.
-1064 nm and its power is 10 ⁶ -10 ¹⁰ W /
cm ² is good.

It is preferable that the thin film is formed while applying a negative potential (preferably −25 V to −150 V) with respect to the ground to the first electrode. If the applied potential is too small or too negative, the film-forming property is deteriorated, and it becomes difficult to obtain emission in a low electric field.

Next, a preferred embodiment of the present invention is shown in FIG.
6 to FIG. FIG. 1 is a sectional view showing a method of manufacturing an electron emission source according to the present invention in the order of steps, FIG. 2 is a sectional view of a manufactured electron emission source, FIG. 3 is a plan view of FIG. 1, and FIG. 5 is a graph showing a relationship between intensity and current density. FIG. 5 is a sectional view of another manufactured electron emission source, and FIG. 6 is a plan view of FIG.

<First Embodiment> Next, an example of a method of manufacturing an electron emission source (electrode structure including a field emission type cathode (cold cathode)) constituting a display device according to the present embodiment will be described with reference to FIG. explain.

First, as shown in FIG. 1A, a conductive material such as niobium, molybdenum or chromium is formed to a thickness of about 2000 mm on a lower substrate 1 made of glass or the like. Reactive ion etching (for example, Cl ₂
And the mixed gas used) with O ₂ and processing the conductive film in a band (stripe), to form a cathode electrode lines 2.

Next, as shown in FIG. 1 (b), a cold cathode thin film 7, for example, a thin film made of diamond-like carbon, is irradiated with laser light (laser ablation) of a graphite-based target according to the present invention to form a cathode electrode line 2. A film is formed on the upper surface to a thickness of about 2000 mm. The thin film 7 is formed by the laser ablation on the cathode electrode line 2.
To the ground level from the power supply 8 (eg,-
A laser beam (excimer laser, wavelength 193 nm, power 2 × 10 ⁸ W /
cm ² ) to fly the target material 7A onto the cathode electrode line 2.

Thereafter, the cold cathode thin film 7 is patterned by a photolithography method and a reactive ion etching method, and except for a connection end portion (not shown) of the cathode electrode line 2 with the control means 25 or the like, not shown. Has a line shape covering the cathode electrode line 2. Alternatively, the cold cathode thin film 7
May be formed so as to cover the cathode electrode line 2 only in the intersection region 9 between the cathode electrode line 2 and the gate electrode line 4, that is, only in the pixel region.

Next, as shown in FIG. 1 (c), an insulating layer 3, for example, silicon dioxide (SiO ₂ ) is sputtered or chemically vapor-deposited (CVD) on the surface including the cold cathode thin film 7 to a thickness of about 1 μm. A gate electrode material 4, for example, niobium or molybdenum is formed on the insulating layer 3 to a thickness of 2000.
The film is formed to a degree. Then, this gate electrode material film is processed into a gate electrode line 4 having a line shape crossing the cathode electrode line 2 by photolithography and reactive ion etching.

Next, as shown in FIG. 1D, a circular micro hole 5 which reaches the thin film 7 through the gate electrode line 4 and the insulating layer 3 is formed by photolithography and reactive ion etching (for example, CHF). (Using a mixed gas of ₃ and CH ₂ F ₂ ) (13 in the figure is a photoresist mask used when forming the holes 5).

Next, the photoresist 13 is removed, and as shown in FIGS. 2 and 3, the cathode electrode line 2 is covered with the insulating layer 3, and the electrode structure having the minute cold cathode thin film 7 exposed in the fine hole 5 is formed. (Electron emission source) 10 is produced.

When the electron emission source 10 is manufactured in this manner, when forming the thin film 7 of the electron emission material, a target mainly composed of carbon such as graphite is applied while applying a predetermined negative potential to the cathode electrode line 2. Since the target material is caused to fly by irradiating a laser beam to the target, the thin film 7 formed in this manner causes emission of electrons in a low electric field, so that low voltage driving is possible. In addition, the thin film 7 made of diamond-like carbon is hardly sputtered by ions existing in a high vacuum region on the gate electrode line 4 during operation, so that stable emission can be maintained for a long time.

Since the thin film 7 has only to be formed by the thickness thereof, it is not necessary to form the thin film 7 with a high precision in height and shape as in the prior art microchip 27. Since the thin film 7 can be formed in advance, the thin film 7 can be easily formed, and lift-off as in the related art is not required at all, and a short circuit is not caused by a stripped metal piece between the cathode and the gate. Even if a metal piece is formed, the cathode 2 and the gate 4 are sufficiently separated from each other because the thin film 7 is thin, and the metal piece does not come into contact with them and short-circuiting does not occur. Are not insulators and do not cause a short circuit. As a result, when the applied voltage between the cathode 2 and the gate 4 is increased, the electrodes are not blown, the defect rate is reduced, and a reliable operation can be performed.

Further, since the thin film 7 can be formed by laser ablation without vapor deposition in micro holes as in the case of the microchip 27 of the prior art, the number of manufacturing steps is reduced, and the number of manufacturing steps is reduced. As a result, the insulation between the cathode 2 and the gate 4 is improved.

The electron emission source 10 obtained by the above method
A plurality of strip-shaped cathode electrode lines 2 are formed on the surface of a lower substrate 1 made of, for example, a glass material, and a thin film 7 for a cold cathode is formed on these cathode electrode lines 2. An insulating layer 3 is formed on the gate electrode 7, and a plurality of gate electrode lines 4 are further formed on the insulating layer 3 so as to intersect with each cathode electrode line 2 in a region 9. The electrode line 4 forms a matrix structure. Each cathode electrode line 2
And each gate electrode line 4 is connected to the control means 15 and is driven and controlled.

In each intersection region 9 between the cathode electrode line 2 and the gate electrode line 4, a number of substantially circular holes 5 penetrating the gate electrode line 4 and the insulating layer 3 and reaching the cold cathode thin film 7. The thin film 7 provided on the bottom of the hole 5 constitutes a cold cathode. This thin film 7 is applied to a target substrate such as graphite mainly composed of carbon by applying a predetermined potential (for example, -100 V) to the cathode electrode line 2 while applying a laser (excimer laser, wavelength 193 nm, power 2 × 10 ⁸ W / cm). ² ) A thin film formed by irradiation.

The configuration of the display device using the electron emission source 10 according to the first embodiment and the display operation thereof are different from those of the conventional example described with reference to FIGS. The difference is only in the structure of the cathode, and other configurations and operations are the same as those of the conventional example.

That is, a predetermined cathode electrode line 2 and a predetermined gate electrode line 4 are selected by the control means 15, and a predetermined voltage is applied between them, so that an intersection area between the cathode electrode line 2 and the gate electrode line 4 is obtained. 9 (that is, between the thin film 7 in the pixel region and the gate portion 4a), a predetermined electric field is generated, and electrons are emitted from the thin film 7 in the hole 5 by a tunnel effect.

In the display device in which the electron emission source 10 is incorporated, the control means 15 selects the cathode electrode line 2 and the gate electrode line 4 having the intersection area that coincides with the electron emission source 10 in a predetermined pixel area forming an image. Then, a predetermined voltage is applied between them. As a result, the electron emission source 10 is excited, electrons are emitted from the thin film 7 in the hole 5, and the electrons are accelerated by a voltage applied between the cathode electrode line 2 and the upper substrate 28 as an anode. The visible light is emitted by colliding with the phosphor on the phosphor screen 29 to form an image. In this case, the structure of the electron emission source 10 is simple, so that a large ultra-thin display device can be formed. Further, since the spread of emitted electrons is small, high definition can be achieved.

According to the structure of the electron emission source 10 described above, a predetermined potential is applied to the cathode electrode line 2 at the bottom of the large number of holes 5 that reach the thin film 7 through the gate electrode line 4 and the insulating layer 3. The cold cathode of the thin film 7 formed by irradiating the carbon-based target substrate with a laser beam while applying a voltage is formed, thereby enabling low-voltage driving.

Since the thin film 9 is a thin film formed by irradiating a carbon-based target substrate with laser light, the thin film 9 is diamond-like carbon. Since the thin film made of diamond-like carbon is chemically inert and is hardly sputtered by ions, stable emission can be maintained for a long time.

In the present embodiment, an electron emission source 10 having a plurality of circular fine holes 5 penetrating the gate electrode line 4 and the insulating layer 3 and reaching the cold cathode thin film 7 is obtained. According to the electron emission source 10, if the work function of the thin film 7 for a cold cathode is sufficiently small, the applied voltage between the cathode electrode line 2 and the gate electrode line 4 is several tens of volts, and the amount of current required for the display is small. Can be obtained.

Since the thin film 7 is a thin film formed by irradiating a target substrate mainly composed of graphite with a laser beam while applying a predetermined potential to the cathode electrode line 2, the thin film 7 has a thickness of 5 × 10 ⁷ A current required for a display can be obtained with an electric field strength of V / m or less, and low-voltage driving can be performed. That is, while applying a negative potential with respect to the ground to the cathode electrode line 2, a thin film 7 formed by irradiating a laser beam to a target substrate mainly composed of graphite and applying a potential to the cathode electrode line 2. When the relationship between the electric field intensity and the current density was measured for the thin film formed without forming the film, the result shown in FIG. 4 was obtained. From this result, based on the present invention, performing film formation while applying a predetermined potential to the cathode electrode line 2,
It can be seen that there is an effect on the field emission from the thin film 7 and emission can be obtained even at a low voltage.

<Second Embodiment> As shown in FIGS. 5 and 6, the electron emission source obtained in this embodiment is a hole of the electron emission source 10 in the first embodiment described above. 5
Only in the configuration of the electron emission source 11 with the shape of the slit-shaped hole 6. The configuration and display operation of the display device using the same are also the same as those described in the first embodiment. The description of the configuration and operation is omitted here.

In the electron emission source 11, the following effects can be obtained in addition to the effects obtained in the above-described first embodiment by forming the holes 6 as slit-shaped holes. That is, the electric field strength on the surface of the thin film 7 of the cold cathode is almost equal to that of the case of the circular hole 5. Therefore, the cold cathode can be driven at substantially the same voltage, but the emission area is larger than that of the circular hole 5. Even when driven at the same voltage, a higher current density can be obtained. As described above, the cold cathode having the slit-shaped holes 6 can obtain a larger emission current by applying a low voltage.

Next, a method of manufacturing the electron emission source 11 will be described, which is basically the same as that described with reference to FIG.

First, a niobium, molybdenum, chromium or the like material is formed on a lower substrate
A conductor film of about 00 ° is formed. Thereafter, the conductive film is processed into a belt shape by photolithography and reactive ion etching to form a cathode electrode line 2.

Next, a thin film 7 for a cold cathode is formed by laser ablation by applying a laser beam to a target substrate mainly composed of carbon while applying a predetermined potential to the cathode electrode line 2. Thereafter, the thin film 7 is shaped into a shape covering a region where a pixel is to be formed by a photoengraving method and a reactive ion etching method.

Next, for example, silicon dioxide is formed on the lower substrate 1, the exposed portions of the cathode electrode lines 2 and the thin film 7 by sputtering or chemical vapor deposition to form an insulating layer 3. For example, a gate electrode material of niobium or molybdenum is formed. Thereafter, the conductor film is processed into a line crossing the cathode electrode line 2 by photolithography and reactive ion etching to form the gate electrode line 4.

Next, fine slit-shaped holes 6 reaching the thin film 7 through the gate electrode line 4 and the insulating layer 3 are formed by photolithography and reactive ion etching.
An electron emission source 11 is manufactured.

According to the present embodiment, as in the first embodiment, the electron emission source is formed by a large number of slit-shaped fine holes 6 penetrating through the gate electrode line 2 and the insulating layer 3 and reaching the thin film 7. In forming the thin film 11, a thin film 7 is formed by irradiating a target substrate mainly composed of carbon with laser light while applying a predetermined potential to the cathode electrode line 2 serving as a cold cathode. The thin film 7 emits light in a low electric field, and can be driven at a low voltage. Also,
Since the thin film 7 is made of diamond-like carbon, it is hard to be sputtered, so that stable emission can be maintained for a long time.

In addition, as described in the first embodiment, since the peeling layer is not formed when the electron emission source is manufactured, the short-circuit defect rate between the cathode electrode line and the gate electrode line can be reduced. In addition, the number of manufacturing steps can be reduced, and since the structure of the electron emission source is simple, a large ultra-thin display device can be configured. Also, since the spread of electrons emitted from the cold cathode is small,
High definition can be achieved.

Further, since the slit-shaped micro holes 6 are formed, the electric field strength on the surface of the thin film 7 of the cold cathode is almost equal to that of the circular micro holes, and the cold cathode is driven at substantially the same voltage. However, since the emission area is larger than that in the case of the circular fine holes, a larger current density can be obtained even when driven by the same voltage.

Although the embodiment of the present invention has been described above, the above-described example can be further modified based on the technical idea of the present invention.

For example, the materials and thicknesses of the thin film 7, the cathode electrode 2, etc., and the method of forming the film may be variously changed. As a film formation method, not only a sputtering method and a CVD method, but also a laser ablation method (a deposition method using an etching phenomenon by laser light irradiation) or the like can be adopted. In particular, in the case of the thin film 7, a target other than graphite can be used.

The cold cathode thin film 7 may be formed only in the intersection area 9 between the cathode electrode line 2 and the gate electrode line 4 or may be provided in substantially the same pattern as the cathode electrode line 2. Alternatively, the thin film 7 may be present in other regions, and may be present on the entire surface of the substrate 1 in some cases. The shape of the fine holes described above is not limited to the above-described circular shape and slit shape, but may be other shapes.

The above-mentioned electron emission source is a FED (Fi
It is suitable for a field emission type display device such as an eld emission display, but the structure of the opposing phosphor screen panel and the pattern and material of each part are not limited to those described above, and various production methods can be adopted. Further, the application of the above-described electron emission source is not limited to the FED or other display devices, and the electron flow emitted from the cathode is controlled by a gate electrode (grid) to amplify or rectify. A circuit element (for example, an electron tube to be used), or a circuit element for extracting electrons emitted from a cathode as a signal current (in which a photoelectric conversion element is attached to the fluorescent panel of the above-described FED, and An element for optical communication that converts a light emission pattern into an electric signal by a photoelectric conversion element is also included.)

[0055]

According to the present invention, as described above, when the charged particle emission source is formed by the fine holes reaching the thin film through the second electrode and the insulating layer,
While applying a predetermined potential to the electrode, the target material mainly composed of carbon is irradiated with laser light to fly the target material, and the thin film is formed. Therefore, the thin film thus formed is low. Since emission is caused by an electric field, low-voltage driving is possible. In addition, since the thin film formed as described above is made of diamond-like carbon, it is hard to be sputtered by ions, so that stable emission can be maintained for a long time.

Further, since the peeling layer is not formed at the time of manufacturing as in the prior art, there is no short circuit between the first electrode and the second electrode, the defect rate can be reduced, and the number of manufacturing steps can be reduced. And because the structure of the charged particle emission source is simple,
Large ultra-thin display devices can be configured,
In addition, since the spread of the discharged charged particles is small, high definition can be achieved.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view showing a method of manufacturing an electron emission source according to a first embodiment of the present invention in the order of steps.

FIG. 2 is a schematic sectional view of a part of the electron emission source.

FIG. 3 is a plan view of a part of the electron emission source.

FIG. 4 is a graph showing the electron emission performance (the relationship between the electric field strength of the cold cathode thin film and the current density) of the electron emission source.

FIG. 5 is a schematic sectional view of a part of an electron emission source according to a second embodiment of the present invention.

FIG. 6 is a plan view of a part of the electron emission source.

FIG. 7 is a sectional view of a part of a conventional electron emission source.

FIG. 8 is a schematic perspective view showing a part of a configuration of a display device using the electron emission source.

[Explanation of symbols]

1, 21 ... lower substrate, 2, 22 ... cathode electrode line,
3, 23 ... insulating layer, 4, 24 ... gate electrode line, 4
a, 24a: gate portion, 5, 6, 26: circular or slit-shaped hole, 7: thin film, 8: power source, 9: intersection area, 10, 1
1, 12 ... electron emission source, 15, 25 ... control means, 20 ...
Display device, 27: microchip, 28: upper substrate, 29: phosphor screen

Claims (8)

[Claims] A step of forming a first electrode on a base; and applying a predetermined potential to the first electrode while irradiating a target mainly composed of carbon with a laser beam to fly a target material. A step of forming a thin film on a first electrode; a step of forming an insulating layer covering the base, the first electrode and the thin film; a second electrode crossing the first electrode on the insulating layer And forming a fine hole reaching the thin film through the second electrode and the insulating layer in a region where the first electrode and the second electrode intersect. Manufacturing method of particle emission device. 2. A step of forming a cathode electrode line on a substrate, and applying a predetermined potential to the cathode electrode line.
Irradiating the target material mainly composed of carbon with a laser beam to fly the target material to form the thin film on the cathode electrode line; and forming an insulating layer covering the substrate, the cathode electrode line and the thin film. Forming; forming a gate electrode line on the insulating layer that intersects the cathode electrode line; and forming the gate electrode line and the insulating layer in a region where the cathode electrode line and the gate electrode line intersect. Forming a substantially circular or slit-shaped fine hole that penetrates through the thin film and reaches the thin film, thereby manufacturing an electron emission source having a cold cathode. . 3. The method for manufacturing a charged particle emission device according to claim 1, wherein the thin film is formed using a target mainly composed of graphite. 4. The method according to claim 1, wherein the thin film is formed while applying a negative potential to the first electrode with respect to the ground. 5. A step of forming a first electrode on a substrate, and applying a predetermined potential to the first electrode, irradiating a target mainly composed of carbon with a laser beam to fly a target material, A step of forming a thin film on a first electrode; a step of forming an insulating layer covering the base, the first electrode and the thin film; a second electrode crossing the first electrode on the insulating layer Forming a fine hole reaching the thin film through the second electrode and the insulating layer in a region where the first electrode and the second electrode intersect. Manufacturing a particle emission device, arranging a light emitting surface at a position facing the charged particle emission device, and manufacturing a display device for emitting the light emission surface by charged particles emitted from the charged particle emission device, a field emission type Display device manufacturing Method. 6. A step of forming a cathode electrode line on a substrate, and applying a predetermined potential to the cathode electrode line.
Irradiating the target material mainly composed of carbon with a laser beam to fly the target material to form the thin film on the cathode electrode line; and forming an insulating layer covering the substrate, the cathode electrode line and the thin film. Forming; forming a gate electrode line on the insulating layer that intersects the cathode electrode line; and forming the gate electrode line and the insulating layer in a region where the cathode electrode line and the gate electrode line intersect. And forming a substantially circular or slit-shaped fine hole that reaches the thin film by passing through the thin film to produce an electron emission source having a cold cathode, and forming a fluorescent surface at a position facing the electron emission source. 6. The field emission display according to claim 5, wherein the display device is arranged to emit the phosphor screen by electrons emitted from the cold cathode. Manufacturing method of the device. 7. The method for manufacturing a field emission display device according to claim 5, wherein the thin film is formed using a target mainly composed of graphite. 8. The method according to claim 5, wherein the thin film is formed while applying a negative potential to the first electrode with respect to the ground.