JP2000306390A5 - - Google Patents
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- JP2000306390A5 JP2000306390A5 JP2000040197A JP2000040197A JP2000306390A5 JP 2000306390 A5 JP2000306390 A5 JP 2000306390A5 JP 2000040197 A JP2000040197 A JP 2000040197A JP 2000040197 A JP2000040197 A JP 2000040197A JP 2000306390 A5 JP2000306390 A5 JP 2000306390A5
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- JP
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000040197A JP4550206B2 (en) | 1999-02-19 | 2000-02-17 | Driving method of nonvolatile semiconductor memory device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11-42224 | 1999-02-19 | ||
| JP4222499 | 1999-02-19 | ||
| JP2000040197A JP4550206B2 (en) | 1999-02-19 | 2000-02-17 | Driving method of nonvolatile semiconductor memory device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009198631A Division JP5306115B2 (en) | 1999-02-19 | 2009-08-28 | Nonvolatile semiconductor memory device and manufacturing method thereof |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000306390A JP2000306390A (en) | 2000-11-02 |
| JP2000306390A5 true JP2000306390A5 (en) | 2007-03-29 |
| JP4550206B2 JP4550206B2 (en) | 2010-09-22 |
Family
ID=26381875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000040197A Expired - Fee Related JP4550206B2 (en) | 1999-02-19 | 2000-02-17 | Driving method of nonvolatile semiconductor memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4550206B2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100676722B1 (en) * | 2000-12-21 | 2007-02-01 | 후지쯔 가부시끼가이샤 | Nonvolatile semiconductor memory and method of erasure |
| US6614694B1 (en) * | 2002-04-02 | 2003-09-02 | Macronix International Co., Ltd. | Erase scheme for non-volatile memory |
| CN100595923C (en) * | 2004-05-27 | 2010-03-24 | 株式会社瑞萨科技 | Control method of integrated semiconductor non-volatile memory device |
| JP4338656B2 (en) | 2005-02-15 | 2009-10-07 | 富士通マイクロエレクトロニクス株式会社 | Method for writing semiconductor memory device |
| JP5458526B2 (en) | 2008-08-08 | 2014-04-02 | 富士通セミコンダクター株式会社 | Semiconductor device and manufacturing method thereof |
| US8369154B2 (en) * | 2010-03-24 | 2013-02-05 | Ememory Technology Inc. | Channel hot electron injection programming method and related device |
| US8467245B2 (en) | 2010-03-24 | 2013-06-18 | Ememory Technology Inc. | Non-volatile memory device with program current clamp and related method |
| US9520404B2 (en) * | 2013-07-30 | 2016-12-13 | Synopsys, Inc. | Asymmetric dense floating gate nonvolatile memory with decoupled capacitor |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2806552B2 (en) * | 1989-05-25 | 1998-09-30 | 日本電気株式会社 | Semiconductor nonvolatile storage device |
| JPH08138394A (en) * | 1994-11-07 | 1996-05-31 | Hitachi Ltd | Semiconductor memory device |
| JPH09102198A (en) * | 1995-08-02 | 1997-04-15 | Matsushita Electric Ind Co Ltd | Semiconductor memory device and control method therefor |
| JP2982676B2 (en) * | 1995-12-08 | 1999-11-29 | 日本電気株式会社 | Over-erase relief method for nonvolatile semiconductor memory device |
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2000
- 2000-02-17 JP JP2000040197A patent/JP4550206B2/en not_active Expired - Fee Related