JP2000301006A5 - - Google Patents
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- Publication number
- JP2000301006A5 JP2000301006A5 JP1999116477A JP11647799A JP2000301006A5 JP 2000301006 A5 JP2000301006 A5 JP 2000301006A5 JP 1999116477 A JP1999116477 A JP 1999116477A JP 11647799 A JP11647799 A JP 11647799A JP 2000301006 A5 JP2000301006 A5 JP 2000301006A5
- Authority
- JP
- Japan
- Prior art keywords
- exchange resin
- anion exchange
- acid
- basic anion
- weakly basic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000002253 acid Substances 0.000 claims description 6
- 239000003957 anion exchange resin Substances 0.000 claims description 6
- 239000002351 wastewater Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-N Carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating Effects 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 239000003729 cation exchange resin Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Description
【0002】
【従来の技術】
半導体製造工程やめっき工程等から排出される酸を含む排水から酸を除去するために、再生効率のよいスチレン系共重合体を母体とする弱塩基性陰イオン交換樹脂をアルカリ再生したものが用いられている。特に半導体工場では、酸を含む排水を効率的に処理するために、弱塩基性陰イオン交換樹脂で酸を除去した後、さらに強酸性陽イオン交換樹脂、強塩基性陰イオン交換樹脂で処理し、排水中に含まれるカチオンや弱塩基性陰イオン交換樹脂で除去しきれなかったアニオンとシリカ、炭酸などの弱酸成分を除去処理している。
[0002]
[Prior Art]
In order to remove the acid from the waste water containing the acid discharged from the semiconductor manufacturing process, the plating process, etc., the one obtained by alkali-regenerating the weak base anion exchange resin based on the styrenic copolymer with high regeneration efficiency is used It is done. In particular, in a semiconductor factory, in order to efficiently treat waste water containing acid, after removing the acid with a weak base anion exchange resin, it is further treated with a strongly acidic cation exchange resin and a strongly basic anion exchange resin. A cation contained in the waste water, anions which can not be removed by the weak base anion exchange resin, and weak acid components such as silica and carbonic acid are removed.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11647799A JP3955162B2 (en) | 1999-04-23 | 1999-04-23 | Method and apparatus for removing acid from acid solution |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11647799A JP3955162B2 (en) | 1999-04-23 | 1999-04-23 | Method and apparatus for removing acid from acid solution |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2000301006A JP2000301006A (en) | 2000-10-31 |
JP2000301006A5 true JP2000301006A5 (en) | 2005-06-02 |
JP3955162B2 JP3955162B2 (en) | 2007-08-08 |
Family
ID=14688085
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11647799A Expired - Fee Related JP3955162B2 (en) | 1999-04-23 | 1999-04-23 | Method and apparatus for removing acid from acid solution |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3955162B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4264689B2 (en) * | 2001-06-05 | 2009-05-20 | ダイキン工業株式会社 | Acid separation method |
JP5096907B2 (en) * | 2007-12-25 | 2012-12-12 | オルガノ株式会社 | Ester purification method |
-
1999
- 1999-04-23 JP JP11647799A patent/JP3955162B2/en not_active Expired - Fee Related
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