JP2000298119A - Composite piezoelectric ultrasonic probe integrated with electric circuit and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a supersensitive composite piezoelectric ultrasonic probe integrated with an electric circuit allowing miniaturization, and provide a manufacturing method therefor. SOLUTION: In this probe 1, a pulse voltage is applied to electrodes 21, 22 through a cable from the outside. The pulse voltage passes through a chip 25 and a wiring electrode 24, and is applied to a first electrode 5 of an ultrasonic probe part 2. A composite piezoelectric part 6 applied with the voltage oscillates by an inverse piezoelectric effect to generate ultrasonic waves. The generated ultrasonic waves pass through a matching layer 8, is radiated form a lens 9 surface, is reflected by a reflector, and is incident on the lens 9 surface again. The incident ultrasonic waves excite a voltage in the composite piezoelectric part 6 by a piezoelectric effect. The excided voltage is inputted into the chip 25 through the wiring electrode 24. The excited voltage is amplified in the chip 25, and is transmitted to the cable. The transmitted voltage signal is inputted into an ultrasonic diagnostic device. By sequentially radiating the ultrasonic waves with rotating the probe 1, an image in all directions perpendicular to the axis can be displayed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composite piezoelectric ultrasonic probe integrally provided with an electric circuit.

[0002]

2. Description of the Related Art In recent years, an ultrasonic diagnostic apparatus which uses a ultrasonic probe to image and inspect the inside of a body cavity is often used. Generally, an ultrasonic probe receives a weak reflected sound wave from the body, and therefore, it is necessary to provide an amplifier to amplify the signal. However, when the amplifier is connected to the probe via a cable, not only the signal is attenuated by the cable, but also noise is unavoidable.

In order to solve such a problem, attempts have been made to integrate an ultrasonic probe and an amplifier without using a cable. Such an integrated ultrasonic probe is disclosed, for example, in Japanese Patent Application Publication No. 2-502078, entitled "Apparatus and Method for Imaging Small Cavity".

FIG. 6 shows an ultrasonic probe disclosed in the above document. The main body 42 of the ultrasonic probe includes a prism portion 42a made of alumina material, a cylindrical portion 42b, and a connecting portion 42c connecting the both. A ring 44 made of a flexible piezoelectric material (a polymer piezoelectric material) is mounted on the outer periphery of the cylindrical portion 42b. The ring 44 has an inner surface electrode (not shown) divided into 64 pieces, and each electrode is connected to an electrode pattern on the prism portion 42a via a wiring pattern 46 on the connecting portion 42c. A plurality of chips 54 are mounted on the electrode pattern of the prism portion 42a corresponding to the electrode patterns, and the chips 54 are electrically connected to each other through the electrode patterns. Cable 28 from one tip 54
Has been pulled out. The ultrasonic probe of FIG. 6 operates as follows. Voltage from cable 28 is selectively applied by tip 54 to one of the inner electrodes of ring 44. The piezoelectric element portion of the inner electrode to which the voltage is applied vibrates due to the inverse piezoelectric effect and emits ultrasonic waves to the outside. The emitted ultrasonic waves are reflected by an external reflector (not shown), and enter the ring 44 again. A voltage due to the piezoelectric effect is excited at one inner surface electrode of the piezoelectric ring 44 by the incident ultrasonic waves. The signal based on the excitation voltage is amplified by the chip 54 and transmitted to the cable 28. Chip 54 performs the functions of both a multiplexer and an amplifier. The transmitted signal is input to an observation device (not shown) and is imaged.

[0005] However, the ultrasonic probe has a problem in that the sensitivity is low because a flexible polymer piezoelectric material is used as the piezoelectric material. Also,
Even when a composite piezoelectric body is used as the piezoelectric body to increase the sensitivity, there is a problem that the probe becomes large because the main body and the piezoelectric body are manufactured separately.

[0006]

SUMMARY OF THE INVENTION An object of the present invention is to provide an electric circuit integrated type composite piezoelectric ultrasonic probe which is highly sensitive and can be miniaturized, and a method of manufacturing the same.

[0007]

According to the present invention, there is provided an ultrasonic probe provided with a back load material, a composite piezoelectric body, and a matching layer, and a silicon substrate integrated with the ultrasonic probe. And an electric circuit mounted on the silicon substrate. An electric circuit-integrated composite piezoelectric ultrasonic probe is provided.

Further, according to the present invention, a step of etching a part of a silicon substrate, casting and firing a piezoelectric body using the etched silicon substrate as a mold, and removing the silicon mold portion A step of exposing the piezoelectric body, injecting a resin between the exposed piezoelectric bodies to form a composite piezoelectric body, forming an electrode and a back load material on one surface of the composite piezoelectric body, and forming an electrode and a matching layer on the other surface. Forming a composite piezoelectric ultrasonic probe, and forming an electric circuit on the surface of the remaining silicon substrate. A method for manufacturing an acoustic probe is provided.

[0009]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the drawings.

(First Embodiment) FIG. 1 is a diagram showing an example of a first embodiment of a composite piezoelectric ultrasonic probe integrated with an electric circuit according to the present invention, and FIG. FIG. 1 is a schematic perspective view, and FIG. 1B is a top view thereof. The ultrasonic probe 1 according to the present embodiment includes an ultrasonic probe unit 2 and an electric circuit unit 3.

The ultrasonic probe section 2 includes a back load member 4, a first
The electrode 5, the composite piezoelectric member 6, the second electrode 7, the matching layer 8, and the lens layer 9 are laminated in this order. The lens layer 9 may not be provided. The composite piezoelectric member 6 includes a plurality of, for example, rod-shaped piezoelectric members 10 that are parallel to each other, and a resin 11 that fills a gap between the piezoelectric members 10. The piezoelectric body 10 includes PZT
In addition to (zirconate titanate), other piezoelectric ceramics having a perovskite structure, or lead-free piezoelectric ceramics such as barium titanate can be used.

The electric circuit section 3 includes a silicon substrate 19, an insulating film 20 formed on the surface of the silicon substrate 19, and an insulating film 20.
Wiring electrodes 21 and 2 provided on one surface (upper surface) of
4. A chip 25 mounted on these wiring electrodes.

The silicon substrate 19 is formed integrally with at least the side surfaces of the back load member 4, the first electrode 5, and the composite piezoelectric body 6 of the ultrasonic probe section 2 and integrated with these members. Have been.

The insulating film 20 is formed on each surface of the silicon substrate 19 that does not contact the ultrasonic probe 2. The wiring electrodes 21 and 22 are electrodes for connecting to a cable communicating with the outside. For example, the electrode 21 is a GND (earth) electrode, and the electrode 22 is a signal electrode. Wiring electrode 23
Is a GND electrode that is electrically connected to the second electrode 7 of the ultrasonic probe unit 2. The wiring electrode 24 includes the first electrode 5
Signal electrode electrically connected to the Wiring electrode 2
4 is continuously formed on the insulating film 20 from the upper surface to the side surface of the silicon base material 19, and its tip is connected to the exposed side surface of the first electrode 5 via a joining member 26 such as solder or paste. I have. The chip 25 has an electric circuit such as an amplifier or a multiplexer inside.
5 Wiring electrodes 21 via input / output terminals (not shown) at the bottom
To 24 are electrically connected.

Next, an example of the operation of the integrated ultrasonic probe 1 of FIG. 1 will be described. A pulse voltage is externally applied to the electrodes 21 and 22 via a cable (not shown). After the pulse voltage passes through the chip 25 as it is,
The voltage is applied to the first electrode 5 of the ultrasonic probe unit 2 through the wiring electrode 24. The composite piezoelectric body 6 to which the voltage is applied vibrates due to the inverse piezoelectric effect, and the ultrasonic waves generated by the vibration are radiated from the surface of the lens 9 through the matching layer 8. The radiated ultrasonic wave is reflected by a reflector (not shown) and reenters the surface of the lens 9. By the incident ultrasonic waves, a voltage is excited in the composite piezoelectric body 6 by a piezoelectric effect. The excitation voltage is again input to the chip 25 via the wiring electrode 24. After the excitation voltage is amplified in the chip 25, the
(Not shown) via a cable. The transmitted voltage signal is finally input to an ultrasonic diagnostic apparatus (not shown). Then, for example, by attaching the probe 1 of FIG. 1 to a rotation axis (not shown) and rotating the probe 1 to sequentially emit ultrasonic waves, images in all directions perpendicular to the axis can be displayed. .

Next, an example of a method for manufacturing the integrated ultrasonic probe 1 of FIG. 1 will be described. 2 to 4 are schematic side views for explaining the steps of the present manufacturing method. (1) First, as shown in FIG. 2A, a bulk silicon substrate 30 is prepared. The silicon substrate 30 is, for example, a plate-like body having a length of 10 mm, a depth of 5 mm, and a thickness (height) of 1 mm. The silicon substrate 30 is prepared by cutting out a silicon wafer using a dicing saw, for example.

(2) Next, as shown in FIG. 2B, a plurality of holes 50 are formed by performing plasma etching on a part of the upper surface of the silicon substrate 30 (for example, about half of the upper surface).
The portion of the silicon substrate 30 where the hole 50 is formed becomes a mold for casting a piezoelectric body in the next step.

The etching is performed, for example, as follows. First, a photoresist material (for example, a positive resist material, about 6 μm in thickness) is applied on the silicon base material 30. A plurality of, for example, circular patterns (for example, 16 μm in diameter) are exposed on the photoresist material and developed, and then the resist material is patterned. Next, silicon is etched by a deep RIE (reactive ion etching) method. The deep RIE method is an etching method in which a hole structure having a high aspect ratio is obtained by repeatedly performing fluoride deposition and etching. For example, C ₄ F ₈ is used as a deposition gas, and SF ₆ is used as an etching gas. By etching, for example, the diameter is 16 μm and the depth is 140 μm on the silicon base 30.
Are formed at a pitch of 20 μm. Deep RIE
Since the method is used, a hole shape having a side surface sufficiently perpendicular to the surface of the silicon substrate 30 can be obtained. After the etching, the photoresist is removed.

(3) As shown in FIG. 2C, the slurry 31 of the piezoelectric ceramic is poured into the silicon mold prepared in the step (2) while being vibrated. Hereinafter, the slurry 31
An example using the PZT slurry 31 will be described. The PZT slurry 31 is made of PZT powder (Pb (Zr
_0.52 Ti _0.48 ) O ₃ ) and PVA (polyvinyl alcohol)
And water are mixed. The average particle size of the PZT powder is, for example, 0.3 μm. PZT slurry 3
After pouring, the PZT slurry 31 is air-dried for 12 hours or more to evaporate water, thereby turning the PZT slurry 31 into a green state. Next, PZT Green 31 was placed in air for 2 hours or more.
Heat at 00 ° C to degrease. Here, the degreasing means removing PVA which is a binder of the PZT powder.

Next, in order to sinter the PZT powder 31 in the silicon mold with its density increased, the degreased sample is subjected to HIP (hot isostatic pressing). The HIP process is performed as follows. First,
After wrapping the sample with BN (boron nitride) powder and holding it with a rubber tube and tape, a CIP (cold isostatic pressing) process is performed by applying an isotropic pressure of about 100 MPa in water. The BN powder is used to prevent a reaction between the sample and the glass at the time of sealing in a glass tube described later and at the time of HIP processing. PZT by CIP processing
The powder 31 is compressed quite densely. Next, the sample wrapped with the BN powder is placed in a Pyrex glass tube, and the tube is evacuated until the pressure in the tube becomes about 10 ⁻³ Pa. Thereafter, the mouth of the glass tube is heated to the softening point of the glass (about 750 ° C.) and sealed. Heating is performed using a gas flame burner to tightly enclose the sample in the BN powder. Next, HIP processing is performed as follows while the sample is sealed in a glass tube. First, an isotropic pressure is applied while heating a sample sealed in glass in Ar gas. For example, the temperature is first raised to a softening point of Pyrex glass while applying a low pressure of about 1 MPa. Next, the temperature and the pressure are simultaneously increased, and the PZT powder 31 is sintered (fired) at a temperature of 1000 ° C. and a pressure of 70 ° C.
Hold for about 2 hours under MPa. After the HIP treatment, the sample is removed from the glass tube and the BN powder.

(4) As shown in FIG. 2D, on the back surface of the unetched portion of the silicon base material 30, that is, on the back surface of the silicon base material 30 where the PZT slurry 31 was not cast as a silicon mold, A photoresist material 32 is applied.

(5) As shown in FIG.
The back surface of the silicon substrate 30 is etched using eF ₂ gas to remove only the silicon-type portion of the silicon substrate 30, and then the photoresist 32 is removed. By the etching, a plurality of standing cylindrical piezoelectric ceramics 33 formed by a silicon mold are exposed. Each of the cylindrical piezoelectric ceramics 33 is composed of the P remaining on the upper surface of the sample.
Each is connected to the ZT plate 31.

(6) As shown in FIG. 3B, a resin 34 such as an epoxy resin is
Fill. The filling is performed, for example, by placing the sample in a closed container, injecting the resin 34 from an injection port separately provided in the container while evacuating the container, and filling the gap between the ceramics 33 with the resin 34. After the resin 34 is cured, polishing is performed from the rear surface to remove unnecessary resin 34 and expose the piezoelectric ceramics 33. Then, the piezoelectric ceramics 3
An electrode 35 made of gold or the like is provided on the entire surface where 3 is exposed by a vapor deposition method or the like. The electrode 35 is the first electrode 5 shown in FIG.
Becomes

(7) As shown in FIG.
An epoxy resin 36 impregnated with, for example, alumina is filled on the upper surface and cured. The resin 36 fills the electrode 35 by applying, for example, a U-shaped frame to the side surface of the sample.

(8) As shown in FIG. 3D, the upper surface of the sample is polished to remove the PZT 31 plate remaining on the upper surface, exposing the piezoelectric ceramics 33, the resin 34, and the silicon substrate 30. . Thereafter, an electrode 37 made of gold or the like is provided on the entire surface on which the piezoelectric ceramics 33 and the resin 34 are exposed by a vapor deposition method or the like. The electrode 37 is the second electrode shown in FIG.
It becomes the electrode 7.

(9) A photoresist is applied to the surface of the sample other than the silicon substrate 30, such as the electrode 37 and the back load material 36. Thereafter, as shown in FIG.
An insulating film 38 such as SiO ₂ is formed on the surface of the silicon substrate 30 by a VD method or the like. The formation of the insulating film 38 is carried out at a low temperature (for example, 25
C). After that, the photoresist is removed.

(10) As shown in FIG. 4B, the wiring electrodes 21, 22, 23, and 24 shown in FIG. 1 are formed on the insulating film 38 by sputtering or printing through a mask. (The electrode 21 is not shown). Electrode 2
3 is formed so as to cover a part of the surface of the second electrode 37. The tip of the electrode 24 formed on the side surface of the sample is connected to the exposed portion of the first electrode 35 by a joining member 26 such as solder. Next, a DC voltage is applied to the electrodes 35 and 37 to polarize the piezoelectric ceramics 33 to impart piezoelectricity to the piezoelectric ceramics 33.

(11) As shown in FIG.
7, a matching layer 39 made of, for example, two layers of epoxy resin.
And a lens 4 made of, for example, a silicone material is provided thereon.
Join 0. As described above, the lens 40 may not be provided.

(12) Next, as shown in FIG.
The IC chip 25 is placed on the wiring electrodes 21 to 24.
The mounting is performed by positioning the input / output terminals (not shown) at the bottom of the chip 25 and the electrodes 21 to 24 so as to match each other, and then bonding them using ball solder or the like.

Through the above steps (1) to (12), the electric circuit integrated type composite piezoelectric ultrasonic probe 1 shown in FIG. 1 can be manufactured.

The ultrasonic probe integrated with an electric circuit according to the present embodiment uses the silicon substrate 30 used in the manufacturing process of the composite piezoelectric ultrasonic probe also as a base of an electric circuit such as an IC chip. I have. Therefore, after forming an ultrasonic probe having a fine structure by performing an etching process or the like on the silicon substrate 30, an integrated ultrasonic probe can be obtained simply by mounting an electric circuit on the remaining substrate. Can be manufactured. Therefore, a small electric circuit integrated ultrasonic probe can be manufactured. Further, since the composite piezoelectric body is used, an ultrasonic probe with higher sensitivity can be realized as compared with the case where a bulk piezoelectric body such as a polymer piezoelectric body is used.

As a modification of this embodiment, in the above-mentioned step (7) (FIG. 3C), instead of bonding the back load material 36 on the electrode 35, a matching layer 39 and a lens 40 are provided. In the step (11) (FIG. 4C), a back load material 36 may be provided on the electrode 37. In the case of such a configuration, the acoustic radiation surface from which the ultrasonic wave is emitted is directed in the opposite direction to that of the ultrasonic probe shown in FIG. 1, that is, the rear surface opposite to the upper surface on which the chip 25 is mounted. It will turn, but there is no problem in the operation of the probe.

Further, each configuration of the present embodiment can of course be variously modified and changed.

For example, in step (3), it is preferable to form a protective film such as silicon oxide or silicon nitride on the inner surface of the hole 50 before pouring the slurry 31 into the hole 50 formed in the silicon substrate 30. By forming a protective film,
The silicon substrate 30 and the piezoelectric slurry 31 can be prevented from reacting during firing. Even if the ultrasonic probe is operated with these protective thin films remaining, it is possible to obtain the good piezoelectric properties of the composite piezoelectric material, but removing them will result in higher electro-mechanical properties. Can be obtained. In order to remove the protective film, for example, in step (5) (FIG. 3A), after the silicon substrate 30 is removed by etching to expose the protective film, reactive ion etching (RIE) or the like is performed. These protective films may be removed by dry etching.

In the present embodiment, the case where PZT is used as the piezoelectric ceramic has been described. However, it goes without saying that the same method can be applied to the case where other piezoelectric ceramics are used. In particular, when a lead-free piezoelectric material such as barium titanate is used for the piezoelectric ceramics, no interdiffusion occurs between the silicon base material 30 and the lead, so that the above-described protective film is formed. No need. Therefore, the manufacturing process can be omitted, and firing at a high temperature can be performed.

Further, since the piezoelectric body 31 and the silicon mold have different coefficients of thermal expansion, warpage occurs during firing, and cracks may occur in the silicon mold depending on the shape of the sample. Such a case can be solved as follows. For example, 0.5 m
m or more is used. Alternatively, in step (2), holes are formed on both surfaces of the silicon base material 30 by etching, and the piezoelectric slurry is fired into a sandwich structure in which both surfaces of the silicon mold are cast. Alternatively, another silicon base material is placed on the cast piezoelectric material slurry 31, and firing is performed in a sandwich structure in which the piezoelectric material 31 is sandwiched between the silicon base materials.

In the step (2), if a through hole is formed in the silicon substrate 30 by etching and the piezoelectric slurry 31 is filled from both sides of the silicon mold into the through hole, the diameter of the hole becomes small. Therefore, the fine piezoelectric structure can be manufactured with good yield.

Further, instead of mounting the IC chip on the silicon substrate 30 as described above,
An IC may be directly manufactured using an IC manufacturing process and used as an electric circuit.

(Second Embodiment) FIG. 5 is a view showing an example of a second embodiment of the integrated ultrasonic probe according to the present invention, and FIG. FIG. 5B is a schematic side view showing a part, and FIG. 5B is a top view showing an example of a completed probe.

In the ultrasonic probe according to the second embodiment, the first electrode 5, which is the signal electrode of the probe unit 2 shown in FIG. 1, is not formed on the entire surface of the composite piezoelectric unit 6, It has a structure formed in a plurality of strips (rectangular) parallel to each other and arranged at a distance. With such a structure, it is possible to apply a voltage to each piezoelectric element corresponding to each strip-shaped electrode 5, so that a voltage is sequentially applied to each electrode 5 to operate as an electronic scanning linear ultrasonic transducer. be able to.

The method for manufacturing the ultrasonic probe according to the present embodiment is as follows.
The method of forming the electrode 35 shown in FIG. 3B is different from the method of manufacturing the ultrasonic probe according to the first embodiment described above. That is, in the aforementioned step (6) (FIG. 3)
(B)) After removing the unnecessary resin 34 and exposing the cylindrical piezoelectric ceramics 33, a plurality of strip-shaped electrodes 35 are formed on the surface where the piezoelectric ceramics 33 are exposed by an evaporation method or the like (FIG. 5A )). Each of the electrodes 35 in FIG. 5A has an elongated rectangular shape in a direction perpendicular to the paper surface,
Alternatively, it is in contact with two or more piezoelectric ceramics 33 (piezoelectric elements).

In the top view shown in FIG. 5B, the electrode 45 is a signal electrode connected to each strip electrode 35 shown in FIG. 5A, and the electrode 46 is shown in FIG. This is a GND electrode connected to the second electrode 7. The electrode 47 is a signal electrode connected to a cable communicating with the outside,
The electrode 48 is a GND electrode connected to an external cable. The number of the electrodes 45 and 47 is the same as the number of the strip electrodes 35. FIG. 5 shows an example in which the number of the electrodes 35, 45, 47 and the number of the piezoelectric elements are eight, respectively. However, it is needless to say that the present embodiment can be implemented in the same manner in the case of other numbers.

Each signal electrode 45 shown in FIG. 5B is formed on the insulating film 20 from the upper surface to the side surface of the silicon base material 30 similarly to the electrode 24 shown in FIG. By way of example, it is connected to each strip-shaped electrode 35 in FIG. In FIG. 5B, the electrodes 45 and 47, the lead wires, and the like on the side surface of the silicon substrate 30 are omitted for easy viewing.

The chip 25 of FIG. 5B has the input / output terminals and the electrodes 45 to 45 at the bottom of the chip, similarly to the chip 25 of FIG.
48, and the wiring electrode 45 is positioned.
Place on top and bond. The ultrasonic probe shown in FIG. 5 operates similarly to the ultrasonic probe of FIG. 1 except that the number of channels is increased.

Even when an electronic scanning linear ultrasonic probe is constructed as in this embodiment, the silicon substrate 30 used in the manufacturing process of the composite piezoelectric ultrasonic probe is used as a base for mounting an IC chip. Used. Therefore, in the same manner as the reason described in the first embodiment, a small electronic circuit integrated electronic scanning composite piezoelectric ultrasonic probe can be manufactured, and a highly sensitive probe can be realized.

[0046]

As described in detail above, the present invention provides an electric circuit integrated type composite piezoelectric ultrasonic probe which is highly sensitive and can be miniaturized, and a method of manufacturing the same.

[Brief description of the drawings]

FIG. 1 is a schematic perspective view and a top view showing an example of an ultrasonic probe according to a first embodiment of the present invention.

FIG. 2 is a schematic side view illustrating an example of a manufacturing process of the ultrasonic probe according to the first embodiment of the present invention.

FIG. 3 is a schematic side view showing an example of a manufacturing process of the ultrasonic probe according to the first embodiment of the present invention.

FIG. 4 is a schematic side view showing an example of a manufacturing process of the ultrasonic probe according to the first embodiment of the present invention.

FIG. 5 is a schematic side view showing a part of a manufacturing process of an ultrasonic probe according to a second embodiment of the present invention and a top view showing a completed ultrasonic probe.

FIG. 6 is a diagram showing a conventional integrated ultrasonic probe.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Ultrasonic probe 2 ... Ultrasonic probe part 3 ... Electric circuit part 4 ... Back load material 5, 7, 35, 37, 45, 46, 47, 48 ... Electrode 6 ... Composite piezoelectric body part 8, 39 matching layer 9, 40 lens layer 10 piezoelectric body 11, 34, 36 resin 20, 38 insulating film 21, 22, 23, 24 wiring electrode 25 chip 26 joining member 19, 30 silicon base Material 31: slurry of piezoelectric ceramics 32: photoresist 33: piezoelectric ceramics 50: hole

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Norihiko Sawada 2-43-2 Hatagaya, Shibuya-ku, Tokyo Inside Olympus Optical Industrial Co., Ltd. (72) Norihiro Yamada 2-43-2 Hatagaya, Shibuya-ku, Tokyo No. Olympus Optical Industrial Co., Ltd. (72) Inventor Masayoshi Esashi 1-11-9, Yagiyama-Minami, Taihaku-ku, Sendai, Miyagi Prefecture F-term (reference) 2G047 AC13 CA01 GB11 GB21 GB23 GB28 GB32 GB33 GH06 4C301 AA01 EE06 EE16 GB03 GB20 GB22 GB27 GB33 GB36 GB37 GB40 5D019 AA21 AA23 AA25 BB02 BB09 BB17 BB26 EE06 FF04 GG11 HH01 HH02

Claims (2)

[Claims] 1. An ultrasonic probe having a back load material, a composite piezoelectric body, and a matching layer, a silicon substrate integrated with the ultrasonic probe, and mounted on the silicon substrate. An electric circuit-integrated composite piezoelectric ultrasonic probe, comprising: an electric circuit; 2. A step of performing etching on a part of the silicon base material, casting and firing the piezoelectric body using the etched silicon base body as a mold, removing the silicon mold part to expose the piezoelectric body, A step of injecting a resin between the exposed piezoelectric bodies to form a composite piezoelectric body, forming an electrode and a back load material on one surface of the composite piezoelectric body, and forming an electrode and a matching layer on the other surface, and forming a composite piezoelectric body. Manufacturing a piezoelectric ultrasonic probe integrated with an electric circuit, comprising the steps of: manufacturing a piezoelectric ultrasonic probe; and forming an electric circuit on the surface of the remaining silicon substrate. Method.