JP2000298071A - Structure for semiconductor pressure sensor - Google Patents
Structure for semiconductor pressure sensorInfo
- Publication number
- JP2000298071A JP2000298071A JP10861399A JP10861399A JP2000298071A JP 2000298071 A JP2000298071 A JP 2000298071A JP 10861399 A JP10861399 A JP 10861399A JP 10861399 A JP10861399 A JP 10861399A JP 2000298071 A JP2000298071 A JP 2000298071A
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- JP
- Japan
- Prior art keywords
- pressure sensor
- thin film
- pressure
- diaphragm
- semiconductor pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体圧力センサ
の構造に関し、詳しくは半導体圧力センサの構造におけ
る耐腐食性の改善に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a semiconductor pressure sensor, and more particularly to an improvement in corrosion resistance of the structure of a semiconductor pressure sensor.
【０００２】[0002]
【従来の技術】図６を用いて従来の半導体圧力センサの
構造を説明する。この半導体圧力センサはエアコンや空
調機などの微圧領域の圧力の測定を目的としている。１
はＫＯＨ等で異方性エッチングしてシリコン基板の基板
面Ｋより凹部Ａを形成し、その底面部が肉薄のダイヤフ
ラム７として設けられた半導体圧力センサチップであ
り、半導体圧力センサチップ１の基板面Ｋが硼珪酸系の
ガラス台座２に陽極接合などにより取り付けられてい
る。このガラス台座２の半導体圧力センサチップ１と接
合されていない表面にはメタライズ１３が施されてい
る。2. Description of the Related Art The structure of a conventional semiconductor pressure sensor will be described with reference to FIG. The purpose of this semiconductor pressure sensor is to measure the pressure in a micro pressure region such as an air conditioner or an air conditioner. 1
Is a semiconductor pressure sensor chip in which a concave portion A is formed from the substrate surface K of the silicon substrate by anisotropic etching with KOH or the like, and the bottom surface portion is provided as a thin diaphragm 7. K is attached to the borosilicate glass base 2 by anodic bonding or the like. The surface of the glass pedestal 2 that is not bonded to the semiconductor pressure sensor chip 1 is provided with metallization 13.
【０００３】また、ＰＰＳやＰＢＴ等のプラスチックの
パッケージ３には、半導体センサチップ１などが収納さ
れ、その上部にふた１０が設けられる。このパッケージ
３の中心にコバール製の金属パイプ１２が配置され、こ
の金属パイプ１２とガラス台座２が、メタライズ１３を
介して半田４（錫、錫−アンチモン合金、鉛、錫−鉛合
金、金−シリコン合金、錫−銀合金など）により接合さ
れている。また、金属パイプ１２の表面は一般に最上層
にＮｉ、Ａｕメッキされている。そして、ガラス台座
２、金属パイプ１２の中心には、半導体圧力センサチッ
プ１に圧力を印加するための圧力導入孔である貫通孔
５，５ａが形成されている。[0005] A semiconductor sensor chip 1 and the like are housed in a plastic package 3 such as PPS or PBT, and a lid 10 is provided on the top thereof. A metal pipe 12 made of Kovar is arranged at the center of the package 3, and the metal pipe 12 and the glass pedestal 2 are soldered via a metallization 13 (tin, tin-antimony alloy, lead, tin-lead alloy, gold- (Silicon alloy, tin-silver alloy, etc.). The surface of the metal pipe 12 is generally plated with Ni or Au on the uppermost layer. In the center of the glass pedestal 2 and the metal pipe 12, through holes 5 and 5a, which are pressure introduction holes for applying pressure to the semiconductor pressure sensor chip 1, are formed.
【０００４】また、ガラス台座２の表面に設けられたメ
タライズ１３は、最下層Ｃｒ／Ｐｔ／最上層Ａｕ、最下
層Ｔｉ／Ｎｉ／最上層Ａｕ、最下層Ｔｉ／Ｐｔ／最上層
Ａｕ等のように構成されており、最上層のＡｕの表面に
半田４が塗られる。半導体圧力センサチップ１の表面の
図示せぬアルミパッドとリード９が金、あるいはアルミ
のワイヤ８で電気的に接続されており、半導体圧力セン
サチップ１の表面にはオーバーコート１１が施されてい
る。The metallized layer 13 provided on the surface of the glass pedestal 2 has a lowermost layer Cr / Pt / uppermost layer Au, a lowermost layer Ti / Ni / uppermost layer Au, a lowermost layer Ti / Pt / uppermost layer Au, and the like. , And the surface of Au on the uppermost layer is coated with solder 4. An aluminum pad (not shown) on the surface of the semiconductor pressure sensor chip 1 and a lead 9 are electrically connected by gold or aluminum wire 8, and an overcoat 11 is applied to the surface of the semiconductor pressure sensor chip 1. .
【０００５】このように構成された半導体圧力センサ
は、金属パイプ１２とガラス台座２に設けられた貫通孔
５，５ａより導入された圧力により、半導体圧力センサ
チップ１のダイヤフラム７がたわみ、ダイヤフラム７上
に設けられた歪ゲージ抵抗６により電気信号に変換さ
れ、リード９を介して外部に出力される歪ゲージ型半導
体圧力センサ（ゲージ圧型半導体圧力センサ）である。In the semiconductor pressure sensor thus constructed, the diaphragm 7 of the semiconductor pressure sensor chip 1 is bent by the pressure introduced from the metal pipe 12 and the through holes 5 and 5a provided in the glass pedestal 2, and the diaphragm 7 This is a strain gauge type semiconductor pressure sensor (gauge pressure type semiconductor pressure sensor) which is converted into an electric signal by the strain gauge resistor 6 provided above and output to the outside via the lead 9.
【０００６】また図７は他の従来例を示しており、図６
と同じものには同じ符号を付し、その説明を省略する。
図６と異なる点は、図７では半導体圧力センサチップ１
などが金属ステムのパッケージ１９（ＴＯ−５形パッケ
ージなど）とその周囲部１７で溶接により取り付けられ
たキャップ１５とにより収納される点である。また、図
７ではパッケージ１９に硼珪酸ガラスのハーメチックシ
ール１６により封止されたピン１４が、半導体圧力セン
サチップ１の表面の図示せぬアルミパッドとワイヤ８で
電気的に接続されており、半導体圧力センサチップ１か
らの電気信号がピン１４を介して出力される。FIG. 7 shows another conventional example, and FIG.
The same components as those described above are denoted by the same reference numerals, and description thereof will be omitted.
The difference from FIG. 6 is that the semiconductor pressure sensor chip 1 in FIG.
Are accommodated by a metal stem package 19 (such as a TO-5 type package) and a cap 15 attached by welding at a peripheral portion 17 thereof. In FIG. 7, a pin 14 sealed in a package 19 by a hermetic seal 16 made of borosilicate glass is electrically connected to an aluminum pad (not shown) on the surface of the semiconductor pressure sensor chip 1 by a wire 8. An electric signal from the pressure sensor chip 1 is output via the pin 14.
【０００７】このような従来の半導体圧力センサの構造
では、貫通孔５，５ａを介して圧力がダイヤフラム７の
歪ゲージ抵抗６やアルミ配線がない受圧面７ａ側から印
加される。圧力媒体である流体には、半導体圧力センサ
チップ１の材料であるＳｉに対し腐食性がある液体（Ｎ
ａ、Ｋａ等の水酸化物を含む水）や、腐食性ガス（ＮＯ
ｘ、ＳＯｘ、ＨＦ等）や、硫黄を含むガソリン等のオイ
ルが使用できないという問題がある。上記した圧力媒体
である水の中に含まれる可動金属イオン（Ｎａ、Ｋａ
等）からダイヤフラム７を保護するために、図８のよう
にダイヤフラム７の受圧面７ａ側に保護膜となるＳｉＯ
2膜１８を形成した構造がある。尚、図８において図７
と同じものには同じ符号を付している。そしてこの構造
は、ドラックジャパン株式会社の技術カタログの中で、
ＰＴＸ圧力トランスミッタ５００／６００シリーズに紹
介されている。In the structure of such a conventional semiconductor pressure sensor, pressure is applied through the through holes 5 and 5a from the side of the pressure receiving surface 7a where the strain gauge resistance 6 of the diaphragm 7 and the aluminum wiring are not provided. The fluid that is the pressure medium includes a liquid (N) that is corrosive to Si that is the material of the semiconductor pressure sensor chip 1.
a, water containing hydroxide such as Ka), corrosive gas (NO
x, SOx, HF, etc.) and oil such as gasoline containing sulfur cannot be used. The movable metal ions (Na, Ka) contained in the water as the pressure medium described above.
8) to protect the diaphragm 7 from the pressure receiving surface 7a side of the diaphragm 7 as shown in FIG.
There is a structure in which two films 18 are formed. In FIG. 8, FIG.
The same reference numerals are given to the same components. And this structure is in the technical catalog of Drag Japan Co., Ltd.
Introduced in the PTX pressure transmitter 500/600 series.
【０００８】[0008]
【発明が解決しようとする課題】しかしながら、このＳ
ｉＯ2膜１８を厚くすると、ガラス台座２との接合強度
が低下してしまい、ボイドやリークパスが形成されるの
で、半導体圧力センサの故障を引き起こすため、ＳｉＯ
2膜１８を薄くする必要があり、可動金属イオンの拡散
バリア効果は不十分である。However, this S
When the thickness of the iO 2 film 18 is increased, the bonding strength with the glass pedestal 2 is reduced, and voids and leak paths are formed.
2 It is necessary to make the film 18 thin, and the diffusion barrier effect of movable metal ions is insufficient.
【０００９】このＳｉＯ2膜１８や他に考えられるＳｉ3
Ｎ4膜と、ガラス台座２（パイレックスガラス、コーニ
ング社品番♯７７４０）との陽極接合による強度は、特
開昭６３−１１０６７０号によると、接合温度が約４０
０℃の場合、印加直流電圧６００ＶでＳｉＯ2膜が約１
５００Å、Ｓｉ3Ｎ4膜が約７００Åが接合できる限界で
ある。The SiO 2 film 18 and other possible Si 3
According to JP-A-63-110670, the bonding temperature of the N 4 film and the glass pedestal 2 (Pyrex glass, Corning part number # 7740) by anodic bonding is about 40.
In the case of 0 ° C., when the applied DC voltage is 600 V, the SiO 2 film
The limit is 500 °, which is approximately 700 ° for the Si 3 N 4 film.
【００１０】また、同じ温度で印加直流電圧を８００Ｖ
にした場合は、ＳｉＯ2膜が約４０００Å、Ｓｉ3Ｎ4膜
が約２１００Åが限界である。しかし、印加直流電圧を
高くすると、歪ゲージ抵抗６のＰＮジャンクションや、
半導体圧力センサチップ１と一体化して形成したバイポ
ーラＩＣのゲート等が過電圧により破壊される可能性が
ある。At the same temperature, the applied DC voltage is 800 V
In this case, the limit is about 4000 ° for the SiO 2 film and about 2100 ° for the Si 3 N 4 film. However, when the applied DC voltage is increased, the PN junction of the strain gauge resistor 6 and the
A gate or the like of a bipolar IC formed integrally with the semiconductor pressure sensor chip 1 may be broken by an overvoltage.
【００１１】本発明は上記事由に鑑みて為されたもので
あり、その目的はダイヤフラムの受圧面を充分保護でき
る薄膜を形成するとともに、半導体圧力センサチップと
ガラス台座との陽極接合による接合強度を充分確保する
ことにより、信頼性が高く、圧力媒体に影響されない半
導体圧力センサの構造を提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has as its object to form a thin film capable of sufficiently protecting the pressure receiving surface of a diaphragm, and to reduce the bonding strength by anodic bonding between a semiconductor pressure sensor chip and a glass pedestal. An object of the present invention is to provide a structure of a semiconductor pressure sensor which has a high reliability and is not affected by a pressure medium by sufficiently securing it.
【００１２】[0012]
【課題を解決するための手段】上記課題を解決するため
に、請求項１の発明は、シリコン基板の基板面より凹部
を形成し、その凹部の底面部が肉薄のダイヤフラムとし
て設けられる半導体圧力センサチップに、圧力導入孔が
形成されたガラス台座を陽極接合により接合し、前記圧
力導入孔より導入された圧力を前記ダイヤフラムのたわ
み量として検出し、このたわみ量を電気信号に変換する
半導体圧力センサの構造において、前記ダイヤフラムの
圧力を受ける受圧面と、前記凹部の側面に生じた傾斜面
に、圧力媒体として用いられる腐食性の液体またはガス
に対する耐腐食性を備えたＡｕ又はＡｕの合金の材料か
らなる導電性薄膜が形成されたことを特徴とする。According to a first aspect of the present invention, there is provided a semiconductor pressure sensor in which a recess is formed from a substrate surface of a silicon substrate, and the bottom of the recess is provided as a thin diaphragm. A semiconductor pressure sensor that joins a glass pedestal having a pressure introduction hole to a chip by anodic bonding, detects the pressure introduced from the pressure introduction hole as the amount of deflection of the diaphragm, and converts the amount of deflection into an electric signal. In the above structure, the pressure receiving surface receiving the pressure of the diaphragm and the inclined surface formed on the side surface of the concave portion are provided with a material of Au or an alloy of Au having corrosion resistance to a corrosive liquid or gas used as a pressure medium. And a conductive thin film formed of
【００１３】よって、ダイヤフラムの受圧面と凹部の傾
斜面を酸やアルカリに対して強く保護することができ、
充分な耐腐食性、耐久性を有する厚さの薄膜を形成する
とともに、半導体圧力センサチップとガラス台座との陽
極接合による接合強度を充分確保して、信頼性が高く、
耐圧力が大きく、圧力媒体に影響されない半導体圧力セ
ンサを提供できる。Therefore, the pressure receiving surface of the diaphragm and the inclined surface of the concave portion can be strongly protected against acid or alkali,
Along with forming a thin film with sufficient corrosion resistance and durability, the bonding strength by anodic bonding between the semiconductor pressure sensor chip and the glass pedestal is sufficiently secured, and the reliability is high.
A semiconductor pressure sensor having a large withstand pressure and being unaffected by a pressure medium can be provided.
【００１４】また、請求項２の発明は、シリコン基板の
基板面より凹部を形成し、その凹部の底面部が肉薄のダ
イヤフラムとして設けられる半導体圧力センサチップ
に、圧力導入孔が形成されたガラス台座を陽極接合によ
り接合し、前記圧力導入孔より導入された圧力を前記ダ
イヤフラムのたわみ量として検出し、このたわみ量を電
気信号に変換する半導体圧力センサの構造において、前
記ダイヤフラムの圧力を受ける受圧面と、前記凹部の側
面に生じた傾斜面に、圧力媒体として用いられる腐食性
の液体またはガスに対する耐腐食性を備えたＴｉの材料
からなる導電性薄膜が形成され、かつ前記半導体圧力セ
ンサチップとガラス台座の接合面にＳｉ薄膜が形成さ
れ、Ｓｉ薄膜とガラス台座が陽極接合されることを特徴
とする。According to a second aspect of the present invention, there is provided a glass pedestal in which a pressure introducing hole is formed in a semiconductor pressure sensor chip in which a recess is formed from a substrate surface of a silicon substrate, and the bottom of the recess is provided as a thin diaphragm. In the structure of a semiconductor pressure sensor for detecting the pressure introduced from the pressure introduction hole as the amount of deflection of the diaphragm and converting the amount of deflection into an electric signal, the pressure receiving surface receiving the pressure of the diaphragm. A conductive thin film made of a Ti material having corrosion resistance to a corrosive liquid or gas used as a pressure medium is formed on an inclined surface formed on the side surface of the concave portion, and the semiconductor pressure sensor chip and A Si thin film is formed on a bonding surface of the glass pedestal, and the Si thin film and the glass pedestal are anodically bonded.
【００１５】よって、ダイヤフラムの受圧面と凹部の傾
斜面を海水に対して強く保護することができ、充分な耐
腐食性、耐久性を有する厚さの薄膜を形成するととも
に、半導体圧力センサチップとガラス台座との陽極接合
による接合強度を充分確保して、信頼性が高く、耐圧力
が大きく、圧力媒体に影響されない半導体圧力センサを
提供できる。Accordingly, the pressure receiving surface of the diaphragm and the inclined surface of the concave portion can be strongly protected against seawater, and a thin film having a sufficient corrosion resistance and durability can be formed. It is possible to provide a semiconductor pressure sensor that secures sufficient bonding strength by anodic bonding with a glass pedestal, has high reliability, has high withstand pressure, and is not affected by a pressure medium.
【００１６】また、請求項３の発明は、請求項１記載の
発明において、前記圧力導入孔の内壁面と前記ガラス台
座のダイヤフラムの受圧面に対向する面にも、Ａｕ又は
Ａｕ合金の材料からなる導電性薄膜が形成されているこ
とを特徴とする。According to a third aspect of the present invention, in the first aspect, the inner wall surface of the pressure introducing hole and the surface of the glass pedestal facing the pressure receiving surface of the diaphragm are also made of Au or an Au alloy material. Characterized in that a conductive thin film is formed.
【００１７】よって、圧力導入孔の内壁面とガラス台座
のダイヤフラムの受圧面に対向する面についても腐食を
防止することができる。Therefore, corrosion can be prevented also on the inner wall surface of the pressure introducing hole and the surface of the glass pedestal facing the pressure receiving surface of the diaphragm.
【００１８】[0018]
【発明の実施の形態】（実施形態１）本発明の実施形態
１を説明する。図１は本発明の実施形態１に対応する半
導体圧力センサの構造を示す断面図であり、図６に示し
た従来例の半導体圧力センサのパッケージ３、ふた１
０、リード９、ワイヤ８を省略したところを示してお
り、図６と同じものには同じ符号を付しその説明を省略
する。さらに図１では図６と異なり、半導体圧力センサ
チップ１のダイヤフラム７の受圧面７ａ側に耐腐食性の
導電性薄膜２０（約０．５μｍ〜数μｍ）が均一に形成
されている。すなわち、半導体圧力センサチップ１のダ
イヤフラム７の受圧面７ａ上、ダイヤフラム７を形成す
る際に、シリコン基板をＫＯＨ等で異方性エッチングし
て生ずる凹部Ａの側面の傾斜面７ｂ上、および半導体圧
力センサチップ１のガラス台座２との接合面１ａ上に導
電性薄膜２０が形成されている。(Embodiment 1) Embodiment 1 of the present invention will be described. FIG. 1 is a cross-sectional view showing the structure of a semiconductor pressure sensor according to the first embodiment of the present invention. The package 3 and the lid 1 of the conventional semiconductor pressure sensor shown in FIG.
FIG. 6 shows a state in which 0, leads 9 and wires 8 are omitted, and the same components as those in FIG. 6 are denoted by the same reference numerals and description thereof is omitted. Further, unlike FIG. 6, in FIG. 1, a corrosion-resistant conductive thin film 20 (about 0.5 μm to several μm) is formed uniformly on the pressure receiving surface 7a side of the diaphragm 7 of the semiconductor pressure sensor chip 1. That is, when the diaphragm 7 is formed on the pressure receiving surface 7a of the diaphragm 7 of the semiconductor pressure sensor chip 1, the silicon substrate is anisotropically etched with KOH or the like, and the inclined surface 7b of the side surface of the concave portion A is formed. A conductive thin film 20 is formed on a bonding surface 1 a of the sensor chip 1 with the glass pedestal 2.
【００１９】この導電性薄膜２０を介して陽極接合によ
り、半導体圧力センサチップ１とガラス台座２が接合さ
れる。この時の陽極接合条件は、例えば温度４００℃、
真空中で、半導体圧力センサチップ１側を正極とし、ガ
ラス台座２側を負極として、直流電圧約６００Ｖ〜７０
０Ｖを印加する。The semiconductor pressure sensor chip 1 and the glass pedestal 2 are joined via the conductive thin film 20 by anodic bonding. The anodic bonding conditions at this time are, for example, a temperature of 400 ° C.
In a vacuum, a DC voltage of about 600 V to 70 V is used with the semiconductor pressure sensor chip 1 side as a positive electrode and the glass pedestal 2 side as a negative electrode.
0 V is applied.
【００２０】水分中のアルカリイオンや酸（硫酸、フッ
素、硝酸等）に対し、耐腐食性があるもので、金属とし
てはＡｕ、Ｐｔ、Ｔｉ等、非金属としてはＳｉＣ、パイ
レックスガラス薄膜等がある。本実施形態では、導電性
薄膜２０の材料として、Ａｕ又はＡｕ合金を用いる。Ｔ
ｉ、ＳｉＣを用いた場合ではガラス台座２との陽極接合
は困難であるが、Ａｕ又はＡｕ合金は、直接ガラス台座
２と接合でき、Ａｕ又はＡｕ合金からなる導電性薄膜２
０はスパッタリングにより約５０００Åの充分な耐腐食
性、耐久性を備えた厚さで形成され、接合強度も確保さ
れる。It has corrosion resistance to alkali ions and acids (sulfuric acid, fluorine, nitric acid, etc.) in water. Au, Pt, Ti and the like are used as metals, and SiC and Pyrex glass thin films are used as nonmetals. is there. In the present embodiment, Au or an Au alloy is used as the material of the conductive thin film 20. T
In the case where i or SiC is used, anodic bonding with the glass pedestal 2 is difficult, but Au or an Au alloy can be directly bonded to the glass pedestal 2 and the conductive thin film 2 made of Au or an Au alloy is used.
No. 0 is formed by sputtering to a thickness of about 5000 ° with sufficient corrosion resistance and durability, and the bonding strength is also ensured.
【００２１】また図１では半導体圧力センサチップ１と
ガラス台座２とが接合する接合面１ａの面上に導電性薄
膜２０が形成されているが、図２に示すように接合面１
ａの面上には導電性薄膜２０を形成しない構造でもよ
い。図２で示すように接合面１ａに導電性薄膜２０を形
成しない場合は、Ｓｉ材料の半導体圧力センサチップ１
とガラス台座２は陽極接合により直接接合される。この
接合面１ａには数１０ÅのＳｉＯ2膜が形成され強固に
接合される。In FIG. 1, a conductive thin film 20 is formed on the surface of the bonding surface 1a where the semiconductor pressure sensor chip 1 and the glass pedestal 2 are bonded, but as shown in FIG.
A structure in which the conductive thin film 20 is not formed on the surface a may be used. When the conductive thin film 20 is not formed on the bonding surface 1a as shown in FIG.
And the glass pedestal 2 are directly bonded by anodic bonding. An SiO 2 film of several tens of degrees is formed on the joining surface 1a, and is firmly joined.
【００２２】このように、Ａｕ又はＡｕ合金の材料によ
り形成された導電性薄膜２０は酸やアルカリに対し、著
しい耐腐食性があり、半導体圧力センサ１のダイヤフラ
ム７が腐食されることがない。As described above, the conductive thin film 20 formed of the Au or Au alloy material has remarkable corrosion resistance to acids and alkalis, and the diaphragm 7 of the semiconductor pressure sensor 1 does not corrode.
【００２３】尚、上記のように構成された半導体圧力セ
ンサの圧力を検出する動作は従来例と同じため、その説
明を省略する。 （実施形態２）図３を用いて実施形態２を説明する。図
１で示した半導体圧力センサチップ１のダイヤフラム７
の受圧面７ａと、ダイヤフラム７を形成する際に、シリ
コン基板をＫＯＨ等で異方性エッチングして生ずる凹部
Ａの側面の傾斜面７ｂと、半導体圧力センサチップ１の
ガラス台座２との接合面１ａに形成される導電性薄膜と
して、図３ではＴｉの材料からなるＴｉ薄膜２１をスパ
ッタリングにより約５０００Åの充分な耐腐食性、耐久
性がある厚さで形成している。尚、図３において図１と
同じものには同じ符号を付しその説明を省略する。この
Ｔｉ薄膜２１は特にＮａＣｌ、ＣａＯ、ＭｇＯが多量に
含まれる海水に対し、強い耐腐食性を示す。The operation of detecting the pressure of the semiconductor pressure sensor configured as described above is the same as that of the conventional example, and the description thereof is omitted. (Embodiment 2) Embodiment 2 will be described with reference to FIG. Diaphragm 7 of semiconductor pressure sensor chip 1 shown in FIG.
Joining surface of the pressure receiving surface 7a of the semiconductor pressure sensor chip 1 with the inclined surface 7b of the side surface of the concave portion A formed by anisotropically etching the silicon substrate with KOH or the like when the diaphragm 7 is formed. In FIG. 3, as the conductive thin film formed in 1a, a Ti thin film 21 made of a Ti material is formed by sputtering to a thickness of about 5000 ° with sufficient corrosion resistance and durability. In FIG. 3, the same components as those in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted. This Ti thin film 21 exhibits strong corrosion resistance particularly to seawater containing a large amount of NaCl, CaO, and MgO.
【００２４】ここで、Ｔｉ薄膜２１を介して、半導体圧
力センサチップ１とガラス台座２を陽極接合することが
困難であるため、ガラス台座２と接合する接合面１ａに
形成されたＴｉ薄膜２１上にＳｉ薄膜２２を形成してい
る。このＳｉ薄膜２２の厚さは例えばポリＳｉの場合は
約５０００Åで、温度６００℃〜６５０℃にて減圧ＣＶ
Ｄ法（１００％ＳｉＨ4をガス圧２０〜２００Ｐａで分
解）により形成される。この他にも単結晶Ｓｉやアモル
ファスＳｉでも良い。このとき、陽極接合は、Ｓｉ薄膜
２２に正電圧（約６００Ｖ〜７００Ｖ）を加え、ガラス
台座２を負電圧として、約４００℃の真空中で実施す
る。Here, since it is difficult to perform anodic bonding between the semiconductor pressure sensor chip 1 and the glass pedestal 2 via the Ti thin film 21, the semiconductor pressure sensor chip 1 and the glass pedestal 2 are formed on the bonding surface 1 a to be bonded to the glass pedestal 2. The silicon thin film 22 is formed. The thickness of the Si thin film 22 is, for example, about 5000 ° in the case of poly-Si,
It is formed by method D (100% SiH 4 is decomposed at a gas pressure of 20 to 200 Pa). In addition, single crystal Si or amorphous Si may be used. At this time, the anodic bonding is performed in a vacuum of about 400 ° C. by applying a positive voltage (about 600 V to 700 V) to the Si thin film 22 and setting the glass pedestal 2 to a negative voltage.
【００２５】このように本実施形態では、ダイヤフラム
７の受圧面７ａ、傾斜面７ｂを保護するためのＴｉ薄膜
の厚さを確保するとともに、Ｓｉ薄膜により半導体圧力
センサチップ１とガラス台座２の接合強度を確保でき
る。As described above, in this embodiment, the thickness of the Ti thin film for protecting the pressure receiving surface 7a and the inclined surface 7b of the diaphragm 7 is ensured, and the semiconductor pressure sensor chip 1 and the glass pedestal 2 are joined by the Si thin film. Strength can be secured.
【００２６】尚、上記のように構成された半導体圧力セ
ンサの圧力を検出する動作は従来例と同じため、その説
明を省略する。 （実施形態３）図４に本発明の実施形態３に対応する半
導体圧力センサの構造を示す。図４では、ダイヤフラム
７の受圧面７ａと傾斜面７ｂの面上に加えて、ガラス台
座２のダイヤフラム７に対向する対向面２ａ上と、ガラ
ス台座２の貫通孔５の内壁面５ｂと、ガラス台座２の底
面のメタライズ１３の下部とに厚さ約１μｍのＡｕの材
料からなる導電性薄膜２３が形成されている。図４にお
いて図１と同じものには同じ符号を付しその説明を省略
する。The operation of detecting the pressure of the semiconductor pressure sensor constructed as described above is the same as that of the conventional example, and the description is omitted. (Embodiment 3) FIG. 4 shows the structure of a semiconductor pressure sensor corresponding to Embodiment 3 of the present invention. In FIG. 4, in addition to the pressure receiving surface 7 a and the inclined surface 7 b of the diaphragm 7, the opposing surface 2 a of the glass pedestal 2 facing the diaphragm 7, the inner wall surface 5 b of the through hole 5 of the glass pedestal 2, A conductive thin film 23 made of a material of Au having a thickness of about 1 μm is formed below the metallization 13 on the bottom surface of the pedestal 2. 4, the same components as those in FIG. 1 are denoted by the same reference numerals, and the description thereof will be omitted.
【００２７】この導電性薄膜２３は、半導体圧力センサ
チップ１とガラス台座２を陽極接合した後、真空蒸着法
により形成される。このとき、図５に示すように加熱方
式は抵抗加熱方式を用い、１．３×１０-4Ｐａ以下の高
真空でヒータ２５にてＡｕを蒸発させて上記した箇所へ
導電性薄膜２３を蒸着形成する。尚、半導体圧力センサ
チップ１とガラス台座２は個々に分断される前の状態を
示している。また、上記したようにＡｕの材料を用いて
導電性薄膜２３を形成したが、Ａｕ合金の材料を用いて
形成してもよい。This conductive thin film 23 is formed by vacuum deposition after the semiconductor pressure sensor chip 1 and the glass pedestal 2 are anodically bonded. At this time, as shown in FIG. 5, the heating method is a resistance heating method, and Au is evaporated by the heater 25 in a high vacuum of 1.3 × 10 −4 Pa or less, and the conductive thin film 23 is deposited on the above-described location. Form. Note that the semiconductor pressure sensor chip 1 and the glass pedestal 2 show a state before they are individually separated. Although the conductive thin film 23 is formed using the Au material as described above, the conductive thin film 23 may be formed using an Au alloy material.
【００２８】このように構成された半導体圧力センサの
動作は従来例で説明したものと同じため、その説明を省
略する。The operation of the semiconductor pressure sensor thus configured is the same as that described in the conventional example, and a description thereof will be omitted.
【００２９】上記したように本実施形態では、ガラス台
座２のダイヤフラム７に対向する対向面２ａ上と、ガラ
ス台座２の貫通孔５の内壁面５ｂにもＡｕ又はＡｕ合金
の材料により導電性薄膜２３が形成されているので、対
向面２ａ、内壁面５ｂの腐食を防止することができる。As described above, in the present embodiment, the conductive thin film made of Au or an Au alloy is also formed on the opposing surface 2a of the glass pedestal 2 facing the diaphragm 7 and on the inner wall surface 5b of the through hole 5 of the glass pedestal 2. Since the protrusions 23 are formed, corrosion of the facing surface 2a and the inner wall surface 5b can be prevented.
【００３０】[0030]
【発明の効果】上記したように、請求項１の発明は、シ
リコン基板の基板面より凹部を形成し、その凹部の底面
部が肉薄のダイヤフラムとして設けられる半導体圧力セ
ンサチップに、圧力導入孔が形成されたガラス台座を陽
極接合により接合し、前記圧力導入孔より導入された圧
力を前記ダイヤフラムのたわみ量として検出し、このた
わみ量を電気信号に変換する半導体圧力センサの構造に
おいて、前記ダイヤフラムの圧力を受ける受圧面と、前
記凹部の側面に生じた傾斜面に、圧力媒体として用いら
れる腐食性の液体またはガスに対する耐腐食性を備えた
Ａｕ又はＡｕの合金の材料からなる導電性薄膜が形成さ
れたため、ダイヤフラムの受圧面と凹部の傾斜面を酸や
アルカリに対して強く保護することができ、充分な耐腐
食性、耐久性を有する厚さの薄膜を形成するとともに、
半導体圧力センサチップとガラス台座との陽極接合によ
る接合強度を充分確保して、信頼性が高く、耐圧力が大
きく、圧力媒体に影響されない半導体圧力センサを提供
できる。As described above, according to the first aspect of the present invention, the pressure introducing hole is formed in the semiconductor pressure sensor chip in which the concave portion is formed from the substrate surface of the silicon substrate and the bottom portion of the concave portion is provided as a thin diaphragm. The formed glass pedestal is joined by anodic bonding, the pressure introduced from the pressure introduction hole is detected as the amount of deflection of the diaphragm, and the structure of the semiconductor pressure sensor that converts the amount of deflection into an electric signal is provided. A conductive thin film made of Au or an alloy of Au having corrosion resistance to a corrosive liquid or gas used as a pressure medium is formed on a pressure receiving surface receiving pressure and an inclined surface formed on a side surface of the concave portion. As a result, the pressure receiving surface of the diaphragm and the inclined surface of the concave portion can be strongly protected against acid and alkali, and have sufficient corrosion resistance and durability. To form a thin film having a thickness of that,
It is possible to provide a semiconductor pressure sensor that has high reliability, high withstand pressure, and is not affected by the pressure medium, by sufficiently securing the bonding strength by anodic bonding between the semiconductor pressure sensor chip and the glass pedestal.
【００３１】また、請求項２の発明は、シリコン基板の
基板面より凹部を形成し、その凹部の底面部が肉薄のダ
イヤフラムとして設けられる半導体圧力センサチップ
に、圧力導入孔が形成されたガラス台座を陽極接合によ
り接合し、前記圧力導入孔より導入された圧力を前記ダ
イヤフラムのたわみ量として検出し、このたわみ量を電
気信号に変換する半導体圧力センサの構造において、前
記ダイヤフラムの圧力を受ける受圧面と、前記凹部の側
面に生じた傾斜面に、圧力媒体として用いられる腐食性
の液体またはガスに対する耐腐食性を備えたＴｉの材料
からなる導電性薄膜が形成され、かつ前記半導体圧力セ
ンサチップとガラス台座の接合面にＳｉ薄膜が形成さ
れ、Ｓｉ薄膜とガラス台座が陽極接合されるため、ダイ
ヤフラムの受圧面と凹部の傾斜面を海水に対して強く保
護することができ、充分な耐腐食性、耐久性を有する厚
さの薄膜を形成するとともに、半導体圧力センサチップ
とガラス台座との陽極接合による接合強度を充分確保し
て、信頼性が高く、耐圧力が大きく、圧力媒体に影響さ
れない半導体圧力センサを提供できる。According to a second aspect of the present invention, there is provided a glass pedestal in which a pressure introducing hole is formed in a semiconductor pressure sensor chip in which a concave portion is formed from a substrate surface of a silicon substrate and the bottom portion of the concave portion is provided as a thin diaphragm. In the structure of a semiconductor pressure sensor for detecting the pressure introduced from the pressure introduction hole as the amount of deflection of the diaphragm and converting the amount of deflection into an electric signal, the pressure receiving surface receiving the pressure of the diaphragm. A conductive thin film made of a Ti material having corrosion resistance to a corrosive liquid or gas used as a pressure medium is formed on an inclined surface formed on the side surface of the concave portion, and the semiconductor pressure sensor chip and A Si thin film is formed on the bonding surface of the glass pedestal, and the Si thin film and the glass pedestal are anodically bonded. Of the semiconductor pressure sensor chip and the glass pedestal with sufficient strength to form a thin film with sufficient corrosion resistance and durability. As a result, it is possible to provide a semiconductor pressure sensor having high reliability, high withstand pressure, and not affected by the pressure medium.
【００３２】また、請求項３の発明は、請求項１記載の
発明において、前記圧力導入孔の内壁面と前記ガラス台
座のダイヤフラムの受圧面に対向する面にも、Ａｕ又は
Ａｕ合金の材料からなる導電性薄膜が形成されているた
め、圧力導入孔の内壁面とガラス台座のダイヤフラムの
受圧面に対向する面についても腐食を防止することがで
きる。According to a third aspect of the present invention, in the first aspect, the inner wall surface of the pressure introducing hole and the surface of the glass pedestal facing the pressure receiving surface of the diaphragm are also made of Au or an Au alloy material. Since the conductive thin film is formed, corrosion can also be prevented on the inner wall surface of the pressure introducing hole and the surface of the glass pedestal facing the pressure receiving surface of the diaphragm.
【図１】本発明の実施形態１に対応する半導体圧力セン
サの構造を示す断面図である。FIG. 1 is a cross-sectional view illustrating a structure of a semiconductor pressure sensor corresponding to a first embodiment of the present invention.
【図２】本発明の実施形態１に対応する他の半導体圧力
センサの構造を示す断面図である。FIG. 2 is a sectional view showing the structure of another semiconductor pressure sensor corresponding to the first embodiment of the present invention.
【図３】本発明の実施形態２に対応する半導体圧力セン
サの構造を示す断面図である。FIG. 3 is a sectional view illustrating a structure of a semiconductor pressure sensor according to a second embodiment of the present invention.
【図４】本発明の実施形態３に対応する半導体圧力セン
サの構造を示す断面図である。FIG. 4 is a cross-sectional view illustrating a structure of a semiconductor pressure sensor according to a third embodiment of the present invention.
【図５】本発明の実施形態３に対応する半導体圧力セン
サの製造方法を説明する説明図である。FIG. 5 is an explanatory diagram illustrating a method for manufacturing a semiconductor pressure sensor according to a third embodiment of the present invention.
【図６】従来の半導体圧力センサの構造を示す断面図で
ある。FIG. 6 is a sectional view showing the structure of a conventional semiconductor pressure sensor.
【図７】従来の他の半導体圧力センサの構造を示す断面
図である。FIG. 7 is a sectional view showing the structure of another conventional semiconductor pressure sensor.
【図８】従来の更に他の半導体圧力センサの構造を示す
断面図である。FIG. 8 is a sectional view showing the structure of still another conventional semiconductor pressure sensor.
１ 半導体圧力センサチップ １ａ 接合面 ２ ガラス台座 ４ 半田 ５，５ａ 貫通孔 ６ 歪ゲージ抵抗 ７ ダイヤフラム ７ａ 受圧面 ７ｂ 傾斜面 １１ オーバーコート １２ 金属パイプ １３ メタライズ ２０ 導電性薄膜 Ａ 凹部 DESCRIPTION OF SYMBOLS 1 Semiconductor pressure sensor chip 1a Joining surface 2 Glass pedestal 4 Solder 5,5a Through hole 6 Strain gauge resistance 7 Diaphragm 7a Pressure receiving surface 7b Inclined surface 11 Overcoat 12 Metal pipe 13 Metallized 20 Conductive thin film A Concave portion
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 2F055 AA40 BB20 CC02 DD01 DD05 DD07 EE13 FF38 FF43 GG14 4M112 AA01 BA01 CA02 CA14 CA15 CA16 DA04 DA08 DA09 DA18 EA02 EA13 FA08 GA01 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2F055 AA40 BB20 CC02 DD01 DD05 DD07 EE13 FF38 FF43 GG14 4M112 AA01 BA01 CA02 CA14 CA15 CA16 DA04 DA08 DA09 DA18 EA02 EA13 FA08 GA01
Claims (3)
し、その凹部の底面部が肉薄のダイヤフラムとして設け
られる半導体圧力センサチップに、圧力導入孔が形成さ
れたガラス台座を陽極接合により接合し、前記圧力導入
孔より導入された圧力を前記ダイヤフラムのたわみ量と
して検出し、このたわみ量を電気信号に変換する半導体
圧力センサの構造において、 前記ダイヤフラムの圧力を受ける受圧面と、前記凹部の
側面に生じた傾斜面に、圧力媒体として用いられる腐食
性の液体またはガスに対する耐腐食性を備えたＡｕ又は
Ａｕの合金の材料からなる導電性薄膜が形成されたこと
を特徴とする半導体圧力センサの構造。1. A glass pedestal having a pressure introducing hole formed thereon is formed by anodic bonding to a semiconductor pressure sensor chip in which a concave portion is formed from a substrate surface of a silicon substrate and a bottom portion of the concave portion is provided as a thin diaphragm. In the structure of the semiconductor pressure sensor that detects the pressure introduced from the pressure introduction hole as the amount of deflection of the diaphragm and converts the amount of deflection into an electric signal, a pressure-receiving surface that receives the pressure of the diaphragm, and a side surface of the concave portion. A structure of a semiconductor pressure sensor, wherein a conductive thin film made of Au or an alloy of Au having corrosion resistance to a corrosive liquid or gas used as a pressure medium is formed on the resulting inclined surface. .
し、その凹部の底面部が肉薄のダイヤフラムとして設け
られる半導体圧力センサチップに、圧力導入孔が形成さ
れたガラス台座を陽極接合により接合し、前記圧力導入
孔より導入された圧力を前記ダイヤフラムのたわみ量と
して検出し、このたわみ量を電気信号に変換する半導体
圧力センサの構造において、 前記ダイヤフラムの圧力を受ける受圧面と、前記凹部の
側面に生じた傾斜面に、圧力媒体として用いられる腐食
性の液体またはガスに対する耐腐食性を備えたＴｉの材
料からなる導電性薄膜が形成され、かつ前記半導体圧力
センサチップとガラス台座の接合面にＳｉ薄膜が形成さ
れ、Ｓｉ薄膜とガラス台座が陽極接合されることを特徴
とする半導体圧力センサの構造。2. A concave portion is formed from a substrate surface of a silicon substrate, and a glass pedestal having a pressure introducing hole is joined to a semiconductor pressure sensor chip provided with a thin diaphragm with a bottom surface portion by anodic bonding. In the structure of the semiconductor pressure sensor that detects the pressure introduced from the pressure introduction hole as the amount of deflection of the diaphragm and converts the amount of deflection into an electric signal, a pressure-receiving surface that receives the pressure of the diaphragm, and a side surface of the concave portion. A conductive thin film made of a Ti material having corrosion resistance to a corrosive liquid or gas used as a pressure medium is formed on the resulting inclined surface, and Si is attached to the bonding surface between the semiconductor pressure sensor chip and the glass pedestal. A structure of a semiconductor pressure sensor, wherein a thin film is formed and an Si thin film and a glass pedestal are anodically bonded.
座のダイヤフラムの受圧面に対向する面にも、Ａｕ又は
Ａｕ合金の材料からなる導電性薄膜が形成されているこ
とを特徴とする請求項１記載の半導体圧力センサの構
造。3. A conductive thin film made of Au or an Au alloy material is also formed on a surface of the glass pedestal facing the inner wall surface of the pressure introducing hole and a pressure receiving surface of the diaphragm of the glass pedestal. Item 2. The structure of the semiconductor pressure sensor according to Item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10861399A JP3458761B2 (en) | 1999-04-15 | 1999-04-15 | Structure of semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10861399A JP3458761B2 (en) | 1999-04-15 | 1999-04-15 | Structure of semiconductor pressure sensor |
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| Publication Number | Publication Date |
|---|---|
| JP2000298071A true JP2000298071A (en) | 2000-10-24 |
| JP3458761B2 JP3458761B2 (en) | 2003-10-20 |
Family
ID=14489250
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10861399A Expired - Fee Related JP3458761B2 (en) | 1999-04-15 | 1999-04-15 | Structure of semiconductor pressure sensor |
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| Country | Link |
|---|---|
| JP (1) | JP3458761B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7404330B2 (en) | 2006-03-15 | 2008-07-29 | Denso Corporation | Pressure sensor |
| KR101236678B1 (en) | 2005-03-23 | 2013-02-22 | 후지 덴키 가부시키가이샤 | Pressure sensor device |
| WO2015045779A1 (en) * | 2013-09-30 | 2015-04-02 | 日立オートモティブシステムズ株式会社 | Mechanical quantity measuring device and production method for same |
| US10578504B1 (en) | 2019-09-04 | 2020-03-03 | Custom Control Sensors, LLC. | Systems and methods for high voltage rating thin film sensors |
| US20220018726A1 (en) * | 2018-12-17 | 2022-01-20 | Robert Bosch Gmbh | Method of manufacturing a sensor set-up for determining at least one pressure of a fluid medium |
| JP7574472B2 (en) | 2021-12-02 | 2024-10-28 | 株式会社日立ハイテク | Pressure sensor module and dispensing device having pressure sensor module |
-
1999
- 1999-04-15 JP JP10861399A patent/JP3458761B2/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101236678B1 (en) | 2005-03-23 | 2013-02-22 | 후지 덴키 가부시키가이샤 | Pressure sensor device |
| US7404330B2 (en) | 2006-03-15 | 2008-07-29 | Denso Corporation | Pressure sensor |
| DE102007012106B4 (en) * | 2006-03-15 | 2012-12-13 | Denso Corporation | pressure sensor |
| WO2015045779A1 (en) * | 2013-09-30 | 2015-04-02 | 日立オートモティブシステムズ株式会社 | Mechanical quantity measuring device and production method for same |
| JPWO2015045779A1 (en) * | 2013-09-30 | 2017-03-09 | 日立オートモティブシステムズ株式会社 | Mechanical quantity measuring apparatus and manufacturing method thereof |
| US20220018726A1 (en) * | 2018-12-17 | 2022-01-20 | Robert Bosch Gmbh | Method of manufacturing a sensor set-up for determining at least one pressure of a fluid medium |
| US10578504B1 (en) | 2019-09-04 | 2020-03-03 | Custom Control Sensors, LLC. | Systems and methods for high voltage rating thin film sensors |
| US10876915B1 (en) | 2019-09-04 | 2020-12-29 | Custom Control Sensors, LLC. | Systems and methods for high voltage rating thin film sensors |
| US11579032B2 (en) | 2019-09-04 | 2023-02-14 | Custom Control Sensors, LLC | Systems and methods for high voltage rating thin film sensors |
| JP7574472B2 (en) | 2021-12-02 | 2024-10-28 | 株式会社日立ハイテク | Pressure sensor module and dispensing device having pressure sensor module |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3458761B2 (en) | 2003-10-20 |
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