WO2015045779A1 - Mechanical quantity measuring device and production method for same - Google Patents

Mechanical quantity measuring device and production method for same

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Publication number
WO2015045779A1
WO2015045779A1 PCT/JP2014/073293 JP2014073293W WO2015045779A1 WO 2015045779 A1 WO2015045779 A1 WO 2015045779A1 JP 2014073293 W JP2014073293 W JP 2014073293W WO 2015045779 A1 WO2015045779 A1 WO 2015045779A1
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WO
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Prior art keywords
layer
sensor
chip
au
metallization
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PCT/JP2014/073293
Other languages
French (fr)
Japanese (ja)
Inventor
英恵 下川
太田 裕之
拓人 山口
秦 昌平
準二 小野塚
真之 日尾
健太郎 宮嶋
相馬 敦郎
芦田 喜章
Original Assignee
日立オートモティブシステムズ株式会社
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0092Pressure sensor associated with other sensors, e.g. for measuring acceleration or temperature
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

Abstract

The present invention provides a connection structure capable of optimizing a section for bonding a sensor chip that has a strain detection part on a semiconductor substrate to a base substrate, highly accurately detecting the strain generated in an object under measurement even in a high temperature, and having low creep deformation and stable sensor output even if subjected to strain over a long period of time. A production method for a mechanical quantity measuring device is characterized in that an initial metallization layer including a material that forms a solid solution with and solid-solution strengthens Au is formed on a base substrate, a solder including Au is laminated onto the initial metallization layer, a sensor chip is mounted onto the solder with the rear surface thereof facing the solder, the resulting laminated body is placed in a heating furnace and heated to at most the heat resistance temperature of the sensor chip and at least the melting temperature of the solder, and a bonding layer is formed through the dissolving from the initial metallization layer into the solder of a portion or the entirety of the material, which solid-solution strengthens the Au in the solder.

Description

Mechanical-quantity measuring device and a manufacturing method thereof

The present invention is a mounting structure of the mechanical-quantity measuring device, and a manufacturing method thereof.

As a method for measuring deformation of a measurement subject (strain), a technique of using a metal foil strain gauges utilizing the change by distortion resistance of the metal foil it is known. The strain gauge following the strain measured by adhering to the measuring object by changing the length of the metal foil, to allow the strain measurement to be measured by detecting the resistance value of the resulting change in metal foil it is a technology. So far, there is a strain gauge using a Cu-Ni alloy foil, Ni-Cr-based alloy foil, also ensures strain gauge affixed (paste), with stabilized, moisture resistance, impact resistance It has also been proposed strain gauge with high protector.

However, since these large power consumption, there is a problem that the battery will be consumed quickly. Therefore, in order to reduce power consumption, semiconductor strain gauges have been proposed the formation of the sensitive resistor strained silicon.

The semiconductor strain as the structure pasted to measured object, instead of the strain gauge using a conventional metal thin gauge, semiconductor substrate and availability 橈性 thin multiple electrodes are provided, a plurality of electrical elements are formed has the door, the allowed 橈性 thin film have been deposited on the semiconductor substrate, and the plurality of electrodes and the plurality of electric elements of the semiconductor strain gauge, characterized in that it is electrically connected structure is proposed in Patent Document 1.

Further, Patent Document 2, the distortion detecting element composed of a silicon chip, having a base to convey the strain to be detected strain detecting elements, the base thermal expansion coefficient of ± 50% of the thermal expansion coefficient of silicon formed of a material within the scope, the strain detecting sensor fixed to a silicon chip to the strain detecting element is formed on the base by heating and melting the glass-based fixing member is disclosed.

JP 2001-264188 JP JP 2001-272287 JP

The semiconductor as strain gauge, the strain generated in the object to be measured correctly convey accuracy distortion detector of the semiconductor chip (hereinafter referred to as sensor chip), the sensitivity is important. Furthermore, when the strain of the same amount of object to be measured is generated for a long time, the stability of the sensor output values ​​indicating the same detection value by the sensor chip is important. These requests, if the object to be measured is used at a high temperature becomes challenging. The application of a physical quantity measurement, such as strain and pressure, in addition to the general household items, for example, the operation control of each device of a motor vehicle, is also conceivable for use in such monitoring of critical infrastructure. The use environment of the case, at high temperatures has to be assumed also to a temperature range of about 0.99 ° C..

The main material of the normal sensor chip is silicon, and the object to be measured, are bonded using a bonding material such as solder. The bonding should be carried out at a temperature below the heat resistant temperature of the sensor chip. Common solder, Sn-3wt% Ag-0.5wt% Cu solder, around a melting point of 217 ° C., such as Pb-5 wt% Sn solder having a melting point of about 310 ° C. is known. The Sn-3wt% Ag-0.5wt% Cu solder becomes a temperature close to the melting point at 100 ° C. ~ 0.99 ° C. vicinity of the use environment, since the solder yield stress becomes softened smaller portions desensitization is a concern, at high temperatures strain occurs deformation such as creep of the bonding layer under the condition that continues to be loaded, the variation of the sensor output becomes a problem. Etc. Pb-5 wt% Sn solder containing a large amount of lead, but the melting point is higher as compared to the Sn-based solder, since a soft material, desensitization, change in the sensor output value is concerned also.

Therefore, in order to ensure the normal operation of the sensor at a high temperature, but also very conceivable to bond the high melting point sensor using a rigid bonding material of the chip and the object to be measured, the junction temperature of the sensor chip heat It can not exceed the temperature. Also, the difference in thermal expansion coefficient between the sensor chip and the object to be measured in the case of bonding at a high temperature, may crack in the silicon chip during bonding occurs, and there is also a concern of a decrease in yield during production.

Previously due to the use of Patent Document 1, an organic thin film have been filed, use at high temperatures is expected to be difficult. In Patent Document 2, although the glass-based fixing member can be expected structure using heat melted to is hard material have been shown, to be destroyed by external force such as shock is also a concern, be constrained environment of use It is considered necessary.

Thus, in the mounting structure of the semiconductor strain gauge, depending on the structure of the joint portion of the sensor chip and the object to be measured, an important performance is greatly influenced as a sensor sensitivity and sensor output stability. Therefore, in the present invention, to optimize the junction between the sensor chip and the object to be measured with a strain detection unit on a semiconductor substrate, with high sensitivity even at high temperatures strain generated in the object to be measured, and to accurately detect it joint structure capable sensor chip (sensor chip, in the present invention including its junction structure hereinafter referred to as the mechanical-quantity measuring device), and an object thereof is to provide a manufacturing method thereof.

The sensor chip and at the time of joining of the object prevents chip fracture defects, also aims to provide a sensor chip bonded structure which can be manufactured at a high yield, and a manufacturing method thereof.

Although the present application includes a plurality of means for solving the above problems, if its one example,
The method of manufacturing a mechanical quantity measuring device, comprising on a base substrate, Au and solid solution formation to form an initial metallization layer including a material to strengthen the solid solution of Au, at least 50 wt% or more of Au on the initial metallization layer the solder is laminated on the solder, the sensor chips forming a strain detection unit on a semiconductor substrate, mounted towards the rear face, by placing the laminate in a heating furnace, heat of the sensor chip temperature or less and then heated above the solder melting temperature, to form a bonding layer partially, or dissolved in the solder all of the material which forms a solid solution strengthening Au in the solder from the initial metallization layer in contact with the solder It was so. Moreover, so as to constitute by attaching a wiring board to draw wire to the outside from the electrodes of the sensor chip.

Further, in the present invention in order to solve the above problems, instead of the base substrate, the surface of the member constituting the mechanical quantity of an object to be measured, comprising a material which forms a solid solution strengthening Au to form an Au solid solution initial metallization layer is formed, on the initial metallization layer of said member, by laminating a solder comprising at least 50 wt% or more of Au, on top of the solder, the sensor chips forming a strain detection unit on a semiconductor substrate, the back surface mounted towards, and placing the stack into the heating furnace, the sensor chip of the heat resistant temperature or lower, and then heated above the solder melting temperature, the solid of Au in the solder from the initial metallization layer in contact with the solder some of the material to be 溶強 of, or to form a bonding layer on the surface of the member constituting the all object to be measured is dissolved in the solder, and the sensor chip, bonding directly to the member constituting the object to be measured how to Subjected to. Furthermore, to provide a method of manufacturing a mechanical quantity measuring apparatus characterized by constituting by attaching a wiring board to draw wire to the outside from the electrodes of the sensor chip.

Further, in the present invention in order to solve the above problems, the mechanical-quantity measuring device, the sensor chip to form the strain sensor on a semiconductor substrate, is interposed between the sensor chip and the object to be measured, the sensor chip to support the, it includes a base substrate for transmitting the distortion to be detected the object to be measured to the sensor chip, and a wiring portion extend the wiring to the outside from the electrodes of the sensor chip, and the base substrate, and the sensor chip between comprise more than at least 50 wt% of Au before heating, the heating in the heating furnace, the penetration from the metallization layer connecting material for solid solution strengthening Au, forming a solid solution containing the as Au material a bonding layer made of solder, and a metallized layer having a remaining material melted into the solder layer in which the material is connected, and the base substrate, the said sensor chip Constructed as has been joined.

Further, in the present invention in order to solve the above problems, in the mechanical-quantity measuring device, instead of the base substrate, comprising a member constituting the mechanical quantity of an object to be measured, and said member, between the sensor chip the, and a said bonding layer and laminated in the metallization layer, the sensor chip was directly formed by joining to the member.

According to the present invention, even at high temperatures strain caused in the measured object detected with high sensitivity, and, even when the strain long time is loaded, it is stable and capable of accurate sensor output junction structure, high it is possible to provide the performance of the mechanical-quantity measuring device, and its manufacturing process.

The sensor chip and it is possible to reduce the chip crack failure at the time of joining the object to be measured, a high yield in the mechanical-quantity measuring device capable of producing, and it is possible to provide a manufacturing process.

It is an example of a sectional view of a mechanical-quantity measuring device according to a first embodiment of the present invention. It is an example of a plan view of a mechanical-quantity measuring device according to a first embodiment of the present invention. The method of manufacturing a mechanical quantity measuring apparatus of the embodiment 1 of the present invention, is a diagram illustrating the process of bonding the sensor chip and the base substrate in a heating furnace. The method of manufacturing a mechanical quantity measuring apparatus of the embodiment 1 of the present invention, is a diagram for explaining a state of the bonding layer when it dissolved the whole of the initial metallization layer 7 in the solder containing Au. The method of manufacturing a mechanical quantity measuring apparatus of the embodiment 1 of the present invention, a diagram part of the initial metallization layer 7 will be described how the bonding layer when melted into solder material 8 comprising Au. The method of manufacturing a mechanical quantity measuring apparatus of the embodiment 1 of the present invention, is a diagram illustrating a state penetration is not uniform in the initial metallization layer 7 to the solder material 8 containing Au. It is a cross-sectional view of a mechanical-quantity measuring device as the example is bonded to the object to be measured in Example 1 of the present invention. In the mechanical-quantity measuring device of the first embodiment of the present invention, by using a combination of the various metallization layers and solder, it prevents chip fracture at the time of bonding, and the results of creep resistance was verified the effect of improving the high-temperature is a table together. The method of manufacturing a mechanical quantity measuring device of the second embodiment of the present invention, is a diagram illustrating the process of bonding the sensor chip and the base substrate in a heating furnace. It is an example of a sectional view of a mechanical-quantity measuring device of the second embodiment of the present invention. The method of manufacturing a mechanical quantity measuring device of the third embodiment of the present invention, is a diagram illustrating the process of bonding the sensor chip and the base substrate in a heating furnace. It is an example of a sectional view of a mechanical-quantity measuring device of the third embodiment of the present invention. The method of manufacturing a mechanical quantity measuring device of the fourth embodiment of the present invention, is a diagram illustrating the process of bonding the sensor chip and the base substrate in a heating furnace. It is an example of a sectional view of a mechanical-quantity measuring device of the fourth embodiment of the present invention. It is a cross-sectional view of a pressure sensor module 500 of Embodiment 5 of the present invention. It is a cross-sectional view of a pressure sensor module 600 according to a modification of Embodiment 5 of the present invention. In the mechanical-quantity measuring device of the first embodiment of the present invention, some eutectic of Si and Au are aspects of the sensor chip 1, or an example of a sectional configuration view of forming a fillet 23 to the entire side surface.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, in the following description, the same components may be omitted and the repeated description the same reference numerals. Since the drawings to clarify the description, compared with the actual embodiment, each part of the width, thickness, there is a case where schematically represented the shape or the like, is merely an example, the interpretation of the present invention It is not intended to be limiting. The present invention is not intended to be limited to the following examples, it is needless to say that various changes and modifications can be made.

In this embodiment, an example of a structure of the sensor chip and the base substrate and their junction a component of the mechanical-quantity measuring device. Base substrate, when providing mechanical-quantity measuring device as a product, the user (by pasting-connected) by attaching the mechanical-quantity measuring device to the object to be measured, when measuring the distortion caused in the object to be measured , and it serves as a connecting element to facilitate connection to the object to be measured. Incidentally, without using the base substrate, configuring the mechanical-quantity measuring device for directly bonding the sensor chip to the member constituting the object to be measured will be described in the following examples.

1, FIG. 2 is a diagram illustrating an example of a sectional structure and planar structure of the mechanical-quantity measuring device 100 of this embodiment. Sensor chip 1 includes a detection unit 2 strain on the main surface 1a, the sensor chip rear surface 1b which is opposite to the plane of the major surface 1a of the sensor chip 1 via a bonding layer 3, the metallized layer 5 and the intermediate metallization layer 6, Te is connected to the base substrate 4. Strain sensor 2 is provided near the center of the sensor chip, a Wheatstone bridge circuit comprising four impurity diffusion resistors are formed. Thus, detecting the distortion by the resistance value of the impurity diffusion resistors is changed by expansion and contraction occurring in the planar direction of the sensor chip 1. Further to the sensor chip 1 is previously formed a part for measuring the temperature as needed. Thus the temperature measurement enables temperature compensation of the measured value if simultaneously, higher precision distortion amount is measurable. Sensor chip 1 in this example, are disposed in a substantially central portion of the base substrate 4, there is no problem even if not particularly central portion.

On the base substrate 4 is disposed printed circuit board 20, the electrode pad 21 and the electrode pads 29 of the sensor chip 1 on the printed circuit board 20 are connected by bonding wires 22 using, for example, Au wire. PCB 20 may be a substrate using a glass epoxy material, a flexible substrate using a polyimide material, or may be a ceramic substrate. In addition, the wiring in the base substrate 4 in accordance with the method of creating the metal base substrate is also of building, the base substrate 4 and the printed circuit board 20 may be Tsunishi 1.
The base substrate 4 metallization layer 5 is disposed on the mounting position of the sensor chip 1, the bonding layer 3 between the metallized layer 5 and the sensor chip 1 is a solder layer containing Au, Si, Ge, Ni, Sn, in, and one or more elements of Sb, Cu, Ag, Co, Pt, Cr, Fe, and is configured to include one or more elements of the Pd. Metallized layer 5 on the base substrate 4 are those comprising Cu, Ag, Co, Pt, Cr, Fe, one or more elements of the Pd. Intermediate of the base substrate 4 and the metallized layer 5, in order to improve the adhesion of the metallized layer 5 may be provided an intermediate metallization layer 6, such as Ni.

Metallized layer is usually common usage of such are bonded to sandwich between the solder layer and the welded material to improve adhesion by increasing wettability with the solder layer and the bonding object. In an embodiment of the present invention, the metallization layer, merges into the solder layer, contain an element for modifying the Au phase to form Au solid solution contained in the solder layer or the intermetallic compound, bonded to said element the role is also a feature where you have to be supplied to the department.

3, in the manufacturing method of the mechanical-quantity measuring device 100 is a diagram for explaining the process of bonding the sensor chip 1 and the base substrate 4 in the heating furnace 10. That intermediate metallization layer 6 and the initial metallization layer 7 are disposed on the base substrate 4, the initial metallization layer solder material 8 containing Au on 7 is mounted, then the main with the strain sensor 2 sensor chip 1 the surface 1a opposite to the surface 1b are mounted so as to be in contact with the solder material 8. The back surface 1b of the sensor chip 1, Ti as the initial metallized layer 9 in order to improve the bonding between the solder material 8, Ni, Au layer, Ti, Pt, Au layer, Ti, Pt, Ag layer, Ti, Ni It is applied by plating or Ag layer, or vapor deposition. These were placed in a heating furnace 10, for example, heated by a heater 11.
Heating, with heating, the solder material 8 is melted containing Au, initial metallized layer 9 on the back surface 1b of the sensor chip 1, and is joined to the initial metallization layer 7 of the base substrate 4. At this time, the initial metallization layer 7 of the base substrate 4 are intended to include Cu, Ag, Co, Pt, Cr, Fe, one or more elements of the Pd. Then, from the initial metallization layer 7 of the base substrate 4, some components of these initial metallization layer, or the whole is dissolved in the solder material 8 containing Au.

On the other hand, at the interface of the sensor chip 1, the surface layer of Au of the initial metallization layer 9, such as Ag layer during generally thin connection penetration in the solder material 8 containing Au, are Ni layer (shown formed thereunder no) becomes to be joined with like.

The state of the bonding layer when it dissolved the whole of the initial metallization layer 7 in the solder containing Au shown in Fig. When all of the initial metallization layer 7 dissolves in the solder material 8 containing Au, an intermediate metallization layer 6 and the solder contacts, there is a case Komu dissolved in the solder portion of the intermediate metallization layer 6, an intermediate metallization layer 6 intermetallic compound layer 13 is formed on the interface. The intermetallic compound layer 14 is formed between the initial metallization layer 9 of the sensor chip 1 surface. An intermediate bonding layer 15, the initial metallization layer 7 has a composition that dissolved in the Au.

Figure 5 shows how the bonding layer when a part of the initial metallization layer 7 melted into solder material 8 comprising Au. Because some of the initial metallization layer 7 dissolves a portion of the initial metallization layer 7 on the intermediate metallization layer 6 remains, which intermetallic compound layer 13 adjacent to is formed. The intermetallic compound layer 14 is formed also between the initial metallization layer 9 of the sensor chip 1 surface. Bonding layer 17 of the intermediate has a composition that dissolved ingredients of the initial metallization layer 7 in Au. Penetration of the initial metallization layer 7 to the solder material 8 containing Au is not uniform, as shown in FIG. 6, faster penetration surrounding the chip as compared with the center of the chip, leaving thick initial metallization layer 7 in the vicinity of the center in many cases. Thus, lower only the thick metallization layer 7 next to the chip center portion, the ratio of the solder in the bonding layer 17 is less reliability is improved.

As described above, in the bonding layer 3 or the bonding layers 15 and 17, between the sensor chip 1 and the base substrate 4 after cooling is generally soft Au are solid solution strengthening by dissolution of components of the initial metallization layer 7 that. Therefore, hardness, tensile strength, values ​​such as Young's modulus increases, it is possible to form a hard bonding layer 3,15,17. Thus the junction layer 3,15,17 becomes hard layer, it is possible to sensitively transfer the mechanical quantity change occurring in the base substrate 4 in the distortion detector 2 of the sensor chip 1 surface. It also reduces the creep deformation within the bonding layer 3 in the long term, the sensor output is stabilized.

For example, when Ag is used for the initial metallization layer 7, the time of joining, Ag dissolves in the solder material 8 containing Au, it forms a solid solution with Au. Au and Ag are related to a solid solution total rate, dissolution rate as early, not a production problem. Therefore, Au bonding layer 3,15,17 after cooling, they become different from the Au early solder material 8 Ag is assumed that a solid solution, soft Au is reforming reinforcing layer by solid solution strengthening so that the but is formed. And, since it becomes possible to melting point of the bonding layer 3,15,17 also increase by Ag dissolves, can reduce the creep deformation of the solder at a high temperature. Thus, a high sensitivity, a and long-term stable sensor measures capable junction structure.

Other, in the case of using Cu for the initial metallization layer 7, the time of joining, Cu dissolves into the solder material 8 containing Au, it forms a solid solution with Au. Therefore, Au bonding layer 3,15,17 after cooling, be those different from the Au early solder material 8 Cu is solid-solved, soft Au is reformed reinforcing layer is formed by solid solution strengthening The Rukoto. Moreover, in the case of Au and Cu are ordered lattice AuCu is formed by Cu content, an effect of greatly enhanced the soft Au. In this case, after bonding, a long time baking at high temperature, it is effective additional process to promote the superlattice. And also the melting point of the bonding layer by Cu dissolves in Au increases to reduce creep deformation of the solder at a high temperature, with high sensitivity, and, a long period of time capable of stable sensor measuring junction structure .

Other, the initial metallization layer 7 Pt, Ni, Co, Cr, Fe, similarly to the case of using Pd layer, bonding time, the components of the initial metallization layer 7 dissolves in the solder material 8 containing Au, it is possible to form a reinforcing layer soft Au reformed. This reduces the creep deformation of the solder at a high temperature, with high sensitivity, and, the long-term stable sensor measures capable junction structure.
Since the penetration rate of the solder material 8 containing Au by components of the initial metallization layer 7 are different, it is important to optimize the heating conditions, after bonding, baked treatment at a high temperature again, traveling the diffusion process to be also effective.

Here, the heating furnace 10 by performing the atmosphere control, to suppress the surface oxidation of the solder material 8 containing Au, it is possible to obtain a good bonding. For example, although the atmosphere is effective include N 2, In addition to this, hydrogen is reducing property or mixtures thereof, or may be used organic acids such as formic acid. Other, the surface oxides may be used organic substances such as reducible flux. Parallelism of the sensor chip 1, the desired bonding height secured, the displacement prevention, in order to void reduction of the bonding layer may be used junction correction jig 12, such as weight 16 and guide. Further, it is also effective to reduce the voids by the surrounding these joining members in vacuo. By performing such contrivance, it is possible to obtain a few defects good bonding layers 3,15,17 such as void. To further improve the bonding property, sputtering process or before bonding is performed a plasma cleaning, the organic contamination of the junction member, such as the removal oxide film, or it is effective to reduce.

Moreover not only the heating furnace, it is also possible to use a so-called die bonder. Supplying a solder material 8 containing Au on the initial metallization layer 7 of the base substrate 4, whereas, the sensor chip 1 by vacuum suction or the like collet, crimped onto the material 8 to solder the sensor chip 1. At this time, heating the collet in pulses (pulse heat), or by heating to constant (constant heat), are also possible that by melting the solder material 8 containing Au bonding the sensor chip 1 and the base substrate 4 . When the base substrate is previously preheated, can more bonding time is shortened. Even when this die bonding bonding, when the vicinity of the joint portion keep the inert atmosphere, it is possible to better bonding. After bonding by the die bonding, and heated again transferred to such other devices such as a high temperature chamber, it is possible to increase the amount of dissolution of the metallization layer 7 component of the bonding layer 17.

As the material of the base substrate 4, it is possible to use Al, Al alloy, Cu, Cu alloy, SUS, 42 alloy, Mo, CIC, and the like.

The solder material containing Au, Au and Ge, Au and Si, Au and an In, 2-way solder Au and Sn, Au and Sb, or, Ge, Si, In, Sn, Ni, Sb, Ti, Cu, the remaining include two or more of Ag is suitable solder composed of Au. The composition of the Au is desirably more than 50 wt%.

For example, in the binary system solder containing Au and Si, as compared with Au the melting point is 1063 ° C., the melting point is lowered to 363 ° C. of about eutectic temperature by the addition of about 3.15 wt% of Si, the sensor chip 1 It can be joined with the heat-resistant temperatures below around about 370 ~ 450 ° C.. However, by joining the initial metallization layer 7 of the structure, metallized component in solid solution increases the melting point of the bonding layer 3,15,17 in Au, and the bonding layer by solid-solution strengthening is strengthened, creep resistance is improved. From the beginning, Au, Si, and at penetration refractory containing components from the initial metallization layer, and it is conceivable to bond with the bonding material of high strength, heat resistance of the sensor chip 1, when bonding the chip If the crack is taken into consideration, manufacturing problems in many cases. Therefore, first performed reliably bonded by reducing the chip fracture probability by joining with AuSi eutectic or solder material having a melting point lower composition near containing 3.15 wt% of Si in Au, simultaneously the process of strengthening perform reforming of soft Au phase by utilizing the penetration of Au reinforcing component of the metallized layer is effective.

The binary solder containing Similarly Au and Ge, as compared with Au the melting point is 1063 ° C., since the melting point by the addition of about 12 wt% of Ge lowers to 356 ° C. of about eutectic temperature, of the sensor chip 1 It can be joined at temperatures near about 370 ~ 450 ° C. of less heat resistance. However, by joining the initial metallization layer 7 of the structure, metallized component in solid solution increases the melting point of the bonding layer 3,15,17 in Au, and the bonding layer by solid-solution strengthening is strengthened, creep resistance is improved. Au from the beginning, Ge, and including a penetration component from the initial metallization layer in such a high-melting, and it is conceivable to bond with the bonding material of high strength, heat resistance of the sensor chip, at the time of joining When the chip cracking is taken into consideration, manufacturing problems often. Therefore, first performed reliably bonded by reducing the chip fracture probability by joining with AuGe eutectic containing 12 wt% of Ge on Au, or a material of low melting point composition near the same time, the metallized the process of strengthening perform reforming of soft Au phase by utilizing the penetration of Au reinforcing component from the layer is effective.

Additional, AuSn, AuIn, AuNi, in AuSb-based, most the melting point of the lower composition, and using the composition in the vicinity thereof to reduce the chip crack occurrence probability by bonding at a temperature below the heat resistant temperature of the chip, and the initial the process of strengthening perform reforming of soft Au phase by utilizing the penetration of Au reinforcing component from metallization layer 7 is effective.

Alternatively, Ge, Si, In, Sn, Ni, Sb, Ti, Cu, the remainder comprising two or more of Ag is by using a solder material consisting of Au, you can adjust the melting point of the solder material because it is, the heat resistance of the sensor chip, it is possible to perform the bonding of a high yield in accordance with the chip crack strength. For example, the solder material containing Ge and Si in Au, to lower until the melting point of 350 ° C. or less depending on the composition, it is possible to lower the chip crack incidence of defects during bonding.

Also by joining with the solder material thus even slightly low melting, etc. can reduce the manufacturing time of the power, it is possible to also reduce the environmental impact.
7 by using the mechanical-quantity measuring device 100 of the present invention shows a block diagram of a case of measuring the strain amount of the object 30. This and the measured object 30 to the base substrate 4 is obtained by fixing several places by welding 31. Thus, transmitted to the strain amount First base substrate 4 generated in the device under test 30, then the sensitivity, the distortion detector 2 of the sensor chip 1 via a bonding layer 3 with improved creep resistance, sensitivity conveyed good, it is possible to accurately measure the amount of strain. Here, fixing the object to be measured and the base substrate 4 by welding 31, screwing or adhesive, crimping, it may be fixed by a method utilizing heat due to friction.

Although not shown, covering the surface protection of the sensor chip 1 of the mechanical-quantity measuring device 100, or for the protection of such bonding wires 22, the area including the sensor chip 1 surface and the bonding wires 22 in an insulating material it may be. Or, it is conceivable to cover the whole like a cap.

Next will be described the shape of the mechanical-quantity measuring device 100 of this embodiment. For example, the sensor chip 1 is approximately 1 mm ~ 5 mm square and a thickness of the size of 50 ~ 400 [mu] m, the thickness of the bonding layer 3 is the size of the order of up to 200 [mu] m. The base substrate 4 has a thickness of about 0.1 ~ 3 mm, but in the case of direct bonding to the object to be measured without using a base substrate, even no problem but thicker. The solder material 8 containing Au is in a size suitable for the size of each chip, thickness using solder pellet of about 20 ~ 200 [mu] m. But in addition to this, a disk-shaped solder pellet, solder ball shape, may be used linear solder or solder paste and the solder particles are mixed with the organic matter.
The initial metallization layer having components which can be enriched with soft Au reformed thickness, depending on the effect of modifying the component, for example, up to 100μm approximately.

As an example, an example of using a binary solder Au and Si. The SUS420 is used for the base substrate 4, and 1mm thick, this applies Ni as an intermediate metallization layer 6, was subjected to Cu thereto as the initial metallized layer 5. The thickness of each layer, there is a manufacturing variation, the intermediate metallization layer with Ni was 3 [mu] m, initial metallization layer of Cu and 10 [mu] m. These metallized layer was formed by plating on the entire base substrate 4. Solder material 8 containing Au is used binary material of Au-3.15 wt% Si, shape, were prepared solder pellet 30μm thickness with approximately the same size as the chip. The sensor chip 1 is 3mm square, on the surface 1b opposite to the distortion detector 2 was subjected to Ti / Ni / Au. Next, the above-mentioned base substrate 4, Au-3.15wt% Si solder pellet, the sensor chip 1 are sequentially stacked, and heated for about 3 minutes at a maximum temperature of 400 ° C. at the reflow furnace with an N 2 atmosphere, then allowed to cool . In this example, the use of the Cu as a component which can enhance the soft Au reforming, optionally dissolved is Cu in the bonding layer 3, in Au, but the penetration amount is also variation depending on the location, Au to almost 30 ~ 70at% of Cu were dissolved. By performing the high-temperature baking, these additional, by superlattice of AuCu progresses, increases the hardness, improved creep resistance at high temperatures. The shape of the chip is changed, the stress generated in the tip end due to a difference in thermal expansion coefficient between the base substrate is changed, it changes the chip cracking resistance and creep resistance even change occurs. Therefore, if the chip shape of about 4 ~ 5 mm square, also changes the solubility of the optimum Cu, creep resistant lysis of approximately 10 ~ 50at% of Cu was good to Au.

An example of a result of the similar investigation are shown in the table of FIG. 8, by using a combination of solder and these metallized layers, prevents chip fracture at the time of bonding, and improved creep resistance at high temperatures it is intended to. In Figure 8, if the bonding property is good as "○", when the creep characteristic (creep resistance) is good as "○", and a case creep characteristics are very good "◎".

Here, the region forming the intermediate metallization layer 6 and the initial metallization layer 7 to the base substrate 4 may be formed on the entire sensor chip 1 may be formed only metallized layer in the vicinity to be mounted . In this case, such partial plating out the using resist or the like. Or, an intermediate metallization layer 6 applied to the entire base substrate 4, then, the resist sensor chip 1 and the mask or the like may be subjected to initial metallization layer 7 only in the portion to be mounted. The material of the base substrate 4 such as SUS, when the surface is made of a material that adhesion peeling poor is concerned with plating have stable, worry and characteristic deterioration due to peeling in the metallized layer of a small area made, but by the intermediate metallization layer 6 to be as much as possible as a large area, it is possible to reduce the plating peeling failure.

Another effect of modifying the solder to such a base the Au is, Au is a very soft, mainly because it is reformed by the effect of solid solution strengthening, a concern brittle material that the impact resistance of the problems is small, it is effective particularly in the case vibration such as automotive applications, an important reliability to shock. And, higher resistance at low temperatures, is excellent in reliability such as temperature cycle.
Also, since the cause eutectic reaction between Si and Au which is the main material of the sensor chip 1, the temperature, to optimize the atmosphere, part of the side surface of the sensor chip 1 as shown in FIG. 17, or the side surface whole it is also possible to form the fillet 23, thereby improving the creep resistance.

In this embodiment, another method for manufacturing the mechanical quantity measuring device using the sensor chip and the base substrate is a component of the mechanical-quantity measuring device, an example of a structure.
In the mechanical-quantity measuring device 200 of this embodiment, the sensor chip 1 is the same as in Example 1, the initial metallization layer including the reinforcing moiety by reforming soft Au solder material 8 containing Au 41, characterized in that formed on the rear surface 1b of the sensor chip 1.

Figure 9 is a diagram showing a manufacturing method of the mechanical-quantity measuring device 200. Bonding the sensor chip 1 and the base substrate 4 in the heating furnace 10, but on the base substrate 4 normal metallization layer 42 is formed. The solder material 8 containing Au on the metallized layer 42 is mounted, then the initial metallization layer 41 formed on the main surface 1a opposite to the surface 1b with the strain sensor 2 of the sensor chip 1 within the solder material 8 It is mounted in contact. Thereafter, by heating, the components of the initial metallization layer 41 formed on the back surface 1b of the sensor chip 1 is dissolved into the solder material 8 containing Au, forming a junction structure of a physical quantity measuring apparatus 200 shown in FIG. 10 . Bonding layer 43 in this example is composed of a solder soft Au was strengthened reformed. The material of the initial metallization layer 41 is the same as the initial metallization layer 7 of Example 1. Solder material 8 is also the same as the first embodiment. In particular, some of the initial metallization layer 41 on the back surface 1b of the sensor chip 1, or all dissolves in the solder 8 containing Au, although not shown, the interface such as the intermetallic compound layer is formed . Thus, such a material the initial metallization layer 41 on the back surface 1b of the sensor chip 1, by adopting the structure, improve the creep resistance at high temperatures, is possible to measure the physical quantity change of sensitivity measured object It can become. And it is possible to reduce the chip fracture probability at the time of bonding.

In this embodiment, another method for manufacturing the mechanical quantity measuring device using the sensor chip and the base substrate is a component of the mechanical-quantity measuring device, an example of a structure.
In the mechanical-quantity measuring device 300 of this embodiment, the sensor chip 1 is the same as in Example 1, the initial metallization layer including the reinforcing moiety by reforming soft Au solder material 8 containing Au the back surface 1b of the sensor chip 1, and characterized in that formed on both the base substrate 4.

Figure 11 is a diagram showing a manufacturing method of the mechanical-quantity measuring device 300. Bonding the sensor chip 1 and the base substrate 4 in the heating furnace 10, but on the base substrate 4 is the initial metallization layer 44 including reinforcing moiety softer Au are formed. The metallized layer 44 is mounted solder material 8 containing Au on, then the sensor chip 1 strain sensor 2 of some principal surface 1a opposite to the surface 1b are mounted so as to be in contact with the solder material 8. At this time, the initial metallization layer 45 is formed that includes a hardenable component similarly soft Au on the back 1b of the sensor chip 1. Here, between the base substrate 4 and the initial metallization layer 44, an intermediate metallization layer 6 for reasons such as improving adhesion may be formed.

Thereafter, by heating them, the solder material component of the initial metallization layer 45 formed on the back surface 1b sensor chip 1, and components of the initial metallization layer 44 formed on the surface of the base substrate 4 containing Au penetration to 8, to form a junction structure of a physical quantity measuring apparatus 300 shown in FIG. 12. Bonding layer 46 in this example is composed of a solder soft Au was strengthened reformed. In particular, the initial metallization layer 45 on the back surface 1b of the sensor chip 1, a portion of the initial metallization layer 44 of the base substrate 4, or all dissolves in the solder 8 containing Au, although not shown, the interface metal such as between compound layer has become what is formed. Thus, the initial metallization layer 45 on the back surface 1b of the sensor chip 1, such a material the initial metallization layer 44 of the base substrate, by adopting the structure, improve the creep resistance at high temperatures, the high sensitivity measurement object it is possible to measure the physical quantity change. And it is possible to reduce the chip fracture probability at the time of bonding.
In the example of embodiment 3, the initial metallization layer 45 and the initial metallization layer 44 of the base substrate 4 surface of the sensor chip 1 may be the same component, it may be used other components. The initial metallization layer 44, the material of the initial metallization layer 45 is the same as the initial metallization layer 7 of Example 1. Solder material 8 is also the same as the first embodiment.

In this embodiment, another method for manufacturing the mechanical quantity measuring device using the sensor chip and the base substrate is a component of the mechanical-quantity measuring device, an example of a structure.
In Example 3, the base substrate 4, and to form an initial metallization layers 44 and 45 containing both can enhance soft Au to a component of the back surface 1b of the sensor chip 1, more the penetration of the solder material 8 It shows an embodiment for fast efficient. To achieve the penetration yet quickly to solder material 8, is a method of sandwiching the initial metallization layer between the solder material 8 is considered valid.
In the mechanical-quantity measuring device 400 of this embodiment, the sensor chip 1 is the same as in Example 1, the initial metallization layer including the reinforcing moiety by reforming soft Au solder material 8 containing Au and between the solder material 8 containing Au, back surface 1b of the sensor chip 1, and characterized in that formed at three positions on the base substrate 4.

Figure 13 is a diagram showing a manufacturing method of the mechanical-quantity measuring device 400. Bonding the sensor chip 1 and the base substrate 4 in the heating furnace 10, but on the base substrate 4 initial metallization layer 47 including reinforcing moiety softer Au is formed. The solder material 8 containing Au on metallized layer 47 is mounted, the solder material 8 comprising a sheet-like Au modifying material 49, Au is mounted thereon, there then a strain sensor 2 of the sensor chip 1 the main surface 1a opposite to the surface 1b are mounted so as to be in contact with the solder material 8. At this time, the initial metallization layer 48 is formed that includes a hardenable component similarly soft Au on the back 1b of the sensor chip 1. Here, between the base substrate 4 and the initial metallization layer 47, an intermediate metallization layer 6 for reasons such as improving adhesion may be formed.

Thereafter, formed by heating the components of the initial metallization layer 48 formed on the back surface 1b sensor chip 1, the components of the Au modifying material 49 sandwiched between the solder material 8, and the surface of the base substrate 4 component of the initial metallization layer 47 which is relatively quickly melts into the solder material 8 containing Au, forming a junction structure of a physical quantity measuring apparatus 400 shown in FIG. 14. Bonding layers 61 and 62 in this example is composed of a solder soft Au was strengthened reformed. In particular, the initial metallization layer 48 on the back surface 1b of the sensor chip 1, solder part of Au modifying material 49, and base the initial metallization layer 47 on the substrate 4 is sandwiched between the solder material 8, or the entirety including Au relatively quickly dissolves in 8, although not shown, the interface has become that such intermetallic compound layer is formed. Thus, the initial metallization layer 48 on the back surface 1b of the sensor chip 1, Au modifying material 49 sandwiched solder material 8, and such a material the initial metallization layer 47 on the base substrate, by adopting the structure, to improve the creep resistance at high temperatures, it is possible to measure the physical quantity change of sensitivity measured object. And it is possible to reduce the chip fracture probability at the time of bonding.
In the example of embodiment 4, the initial metallization layer 48 of the sensor chip 1, and Au modifying material 49 sandwiched between the solder material 8, and the initial metallization layer 47 of the base substrate 4 surface may be the same component, another components may be used. The initial metallization layer 48, Au modifying material 49, the material of the initial metallization layer 47 is the same as the initial metallization layer 7 of Example 1. Solder material 8 is also the same as the first embodiment.

Further, in this embodiment, the base substrate 4, or any of the initial metallization layer 47, 48 formed on the back surface 1b of the sensor chip 1, or omitted Both, Au modified only during the soldering material 8 sandwich quality material 49, configurations are contemplated for forming the bonding layer.

The example of applying the mechanical-quantity measuring device of the present invention the pressure sensor module shown in FIG. 15.
The pressure sensor module 500 shown in the sectional view of FIG. 15 includes a container 54 and a lid portion 53 for closing the upper part of the hollow hole 51 and cylindrical portion 52 having a hollow hole 51 inside in the cylindrical portion 52 . Further, the upper portion of the lid portion 53 of the hollow hole 51 be formed regions of the diaphragm 56, the bore of the sensor module 57 is a diaphragm 56 portion attached via a bonding layer 3 of the sensor chip 1 to the base substrate 4 51 It is mounted on a surface opposite to the. Also for outputting a detection amount strain from the sensor chip 1, the wiring board 20 is attached via a bonding wire 22. Further protect these sensor module (mechanical-quantity measuring device) 57 parts, and the case 58 to output a measured value, although not shown connector is mounted on the periphery.

The base substrate 4, for example CIC substrate, Mo, 42Alloy, SUS, Al, ceramic or the like as a material, the tubular portion 52 and the diaphragm 56 portion such as SUS material is applied. The case 58 is a resin is applied may be of metallic material if the heat resistance is not.

The bonding between the diaphragm 56 and the base substrate 4 is performed using welding, brazing material, screwing, caulking, or the like heat due to friction. The printed circuit board 20, when the volume of the pressure sensor module 500 can not be accommodated is limited retrieves or used as such as a flexible board, a connector, a signal used as the spring of such a probe pin it is also possible.

The pressure sensor module 500, joint portions 55 are connected to, for example, a car or a hydraulic system of pipes. Therefore, Examples 1 to sensor chip 1 connected via a bonding layer according to the fourth present invention on the base substrate 4 is bonded on the diaphragm 56, by distorted through the diaphragm 56 in accordance with the hydraulic pressure variations converts the change in pressure into electrical signals.

In the production of the pressure sensor module 500, to the sensor chip 1 may be mounted from prepares separate sensor module (mechanical-quantity measuring device) 57 mounted via a bonding layer 3 on the base substrate 4 in the lid portion 53 , it may be a process of bonding the sensor chip 1 after attaching the base substrate 4 in the lid portion 53 first.

The pressure sensor module 600 structures formed by joining the directly sensor chip 1 to the diaphragm 56 (the measurement target) without using the base substrate 4 is also possible. Show this example (modified example) in FIG. 16, the sensor chip 1 is not directly bonded with a bonding layer as described in Examples 1-4 of the present invention to the diaphragm 56, the diaphragm 56 is distorted in accordance with change of hydraulic pressure , by detecting the strain amount of the strain sensor 2 sensor chip 1, to convert the change in pressure into electrical signals. When not using the base substrate 4, as in this example, opposite to the side surface, the metallized layer comprising a solid solution strengthening moiety softer Au reformed in Au of the hollow hole 51 of the diaphragm 56 it is necessary to previously subjected to. Alternatively, in the case of forming a metallized layer containing the solid solution strengthening moiety softer Au reformed into Au on the back surface 1b of the sensor chip 1, on the diaphragm 56 can be secured solder wetting surface only treatment layer may be formed.

Rear portion of the diaphragm 56 which is mounted in the sensor chip 1, to form a locally thin portion, by changing the thickness of the part, it is also possible to change the measurement range of the pressure.

In the pressure sensor module 500 and 600 thus created to, stable little creep deformation junction 3 of the sensor chip 1 is at a high temperature, and also high reliability such as temperature cycling, the time of measurement, such as fuel pressure gasoline automobile such as, high sensitivity to pressure changes when used in high temperature environment, it is possible to measure the pressure change and stably for a long period of time. Also, less chip crack failure even in the joining process of the sensor chip 1, the yield is good.

Soldering material 9 initial metallization layer 10 heating furnace 11 heater 12 comprising a first sensor chip 1a sensor chip main surface 1b sensor chip rear surface 2 strain sensor 3 bonding layer 4 base substrate 5 metallization layer 6 intermediate metallization layer 7 initial metallization layer 8 Au of bonding the correction jig 13 intermetallic compound layer 14 intermetallic compound layer 15 initial metallization layer electrode 22 bonding wire 23 fillet part dissolved's bonding layer 20 printed circuit board 21 printed circuit board all dissolved but the bonding layer 16 weights 17 initial metallization layer 29 sensor chip wire bonding electrode 30 DUT 31 welds 41 sensor chip back surface of the initial metallization layer 42 the base substrate surface of the initial metallization layer 43 bonding layer 44 the base substrate surface of the initial metallization layer 45 sensor chip backside metallization layer 46 bonding layer 47 initial metallization layer 48 sensor chip backside metallization layer 49 Au modifying material 51 hollow hole 52 tubular portion 53 the lid part 54 container 55 joint portion 56 the diaphragm 57 sensor module 58 casing 61 bonding layer 100 mechanical quantity measurement of the base substrate surface 200 mechanical-quantity measuring device 300 mechanical-quantity measuring device 400 mechanical-quantity measuring device 500 the pressure sensor module 600 pressure sensor module

Claims (17)

  1. On the base substrate to form an initial metallization layer including a material which forms a solid solution strengthening Au to form an Au solid solution,
    The Au on the initial metallization layer by laminating a solder comprising at least 50 wt% or more,
    On the solder, the sensor chips forming a strain detection unit on a semiconductor substrate, mounted towards the rear face,
    By placing the laminate in a heating furnace, and heated the sensor chip of the heat resistant temperature or lower, and more than the solder melting temperature,
    Method of manufacturing a mechanical quantity measuring apparatus for forming a bonding layer portion, or by dissolving in the solder all of the material which forms a solid solution strengthening Au in the solder from the initial metallization layer in contact with the solder.
  2. According to claim 1,
    Wherein instead of the base substrate, the surface of the member constituting the mechanical quantity of an object to be measured, to form an initial metallization layer including a material which forms a solid solution strengthening Au to form an Au solid solution,
    And the solder layer on the initial metallization layer of said member, by laminating the sensor chip was placed into the heating furnace,
    By heating of the heating furnace, a manufacturing method of a physical quantity measuring apparatus for forming a bonding layer for bonding directly the sensor chip on the surface of the member constituting the object to be measured.
  3. According to claim 1,
    On the back the strain sensor is opposite to the formed main surface of the sensor chip, the initial metallization layer same material as the Au solid solution strengthening to be included in, or different kinds of materials to enhance solid solution of Au, the initial metallization layer that includes the formation,
    On the solder, the production method of the mechanical-quantity measuring device to be mounted by laminating the back surface forming the initial metallization layer of the sensor chip.
  4. According to claim 1,
    The base substrate or the member constituting the mechanical quantity of an object to be measured, and laminated in two layers of solder containing at least 50 wt% or more of Au sandwich was laminated between the sensor chip,
    During solder laminated divided into the two layers, the manufacturing method of the mechanical quantity measuring apparatus for forming a bonding layer is sandwiched between the Au modifying material.
  5. According to claim 4,
    The base substrate or on the surface of the member constituting the mechanical quantity of an object to be measured is omitted to form the initial metallized layer containing a component modifying the Au,, metallized layer to ensure only solderability only forming a production method of a physical quantity measuring apparatus for forming a bonding layer.
  6. In any of claims 1 to 5,
    Examples material of Au in the solder can be strengthened solid solution, Cu, Ag, Co, Pt, Cr, Fe or the method of manufacturing the mechanical quantity measuring device using the initial metallization layer including at least one of the elements Pd,.
  7. In any of claims 1 to 5,
    The solder, Au and Ge, Au and Si, Au and an In, Au and Sn, Au and Sb, the manufacturing method of the mechanical-quantity measuring device is a binary solder Au and Ni containing Au.
  8. In any of claims 1 to 3,
    The solder containing Au is, Ge, Si, In, Sn, Ni, Sb, Ti, comprising at least two or more elements of Cu, and Ag, the remainder is solder consisting of Au mechanical-quantity measuring device the method of production.
  9. A sensor chip formed with strain sensor on a semiconductor substrate,
    Interposed between the sensor chip and the object to be measured, while supporting the sensor chip, a base substrate for transmitting the distortion to be detected the object to be measured to the sensor chip,
    A wiring portion to draw the wire to the outside from the electrodes of the sensor chip,
    Equipped with a,
    And the base substrate, between said sensor chip,
    Forming a Au and solid solution comprising a material for solid solution strengthening Au, by heating in the heating furnace, and a metallized layer having a remaining material melted into the solder layer in which the material is connected,
    Comprises preheating at least 50 wt% or more of Au is by heating in a heating furnace, accept penetration from the metallization layer connecting material for solid solution strengthening Au, solder to form a solid solution containing the as Au material a bonding layer comprising,
    The have,
    The base substrate and the amount of mechanics and the sensor chip is bonded measuring device.
  10. According to claim 9,
    In place of the base substrate, comprising a member constituting the mechanical quantity of an object to be measured,
    And said member, between the sensor chip, and a said bonding layer and laminated in the metallization layer, the sensor chip directly, the mechanical-quantity measuring device is joined to the member.
  11. According to claim 9,
    And the base substrate, between the sensor chip, on the base substrate, the metallization layer, the bonding layer are stacked,
    Between the sensor chip and the bonding layer, a second metallization layer are laminated, or are omitted, the base substrate and the amount of mechanics and the sensor chip is bonded measuring device.
  12. According to claim 9,
    And the base substrate, between the sensor chip, the bonding layer is, first, divided into the second bonding layer, wherein the first, third Au modifying material between the second bonding layer There are laminated,
    The base substrate and the first bonding layer and the first metallization layer between, and the second metallization layer between the sensor chip and the second bonding layer, are laminated, respectively, or are omitted Te, the base substrate and the amount of mechanics and the sensor chip is bonded measuring device.
  13. According to claim 10,
    A member constituting the object to be measured of the physical quantity, between the sensor chip, on said member, the metallized layer, the bonding layer are stacked,
    Between the sensor chip and the bonding layer, a second metallization layer are laminated, or are omitted, the member and the amount of mechanics and the sensor chip is bonded measuring device.
  14. According to claim 10,
    A member constituting the object to be measured of the physical quantity, between the sensor chip, the bonding layer is, first, divided into the second bonding layer, between the first, second bonding layer Au modifying material is laminated,
    First metallization layer between the said member first bonding layer, and the second metallization layer between said sensor chip second bonding layer, and each is laminated, or are omitted the member and the amount of mechanics and the sensor chip is bonded measuring device.
  15. In any of claims 9 to 14,
    Examples material of Au in the solder can be strengthened solid solution, Cu, Ag, Co, Pt, Cr, Fe or mechanical-quantity measuring device using a metallization layer including at least one of the elements Pd,.
  16. In any of claims 9 to 14,
    Said containing Au solder, Au and Ge, Au and Si, Au and an In, Au and Sn, the mechanical-quantity measuring device is a binary solder Au and Sb.
  17. In any of claims 9 to 14,
    The solder containing Au is, Ge, Si, In, Sn, Ni, Sb, Ti, comprising at least two or more elements of Cu, and Ag, the remainder is solder consisting of Au mechanical-quantity measuring device .
PCT/JP2014/073293 2013-09-30 2014-09-04 Mechanical quantity measuring device and production method for same WO2015045779A1 (en)

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JPH06125096A (en) * 1992-10-09 1994-05-06 Mitsubishi Electric Corp Semiconductor pressure sensor
JPH09280972A (en) * 1996-04-12 1997-10-31 Denso Corp Manufacture of semiconductor pressure sensor
JP2000131170A (en) * 1998-10-28 2000-05-12 Hitachi Car Eng Co Ltd Method of mounting pressure sensor
JP2000298071A (en) * 1999-04-15 2000-10-24 Matsushita Electric Works Ltd Structure for semiconductor pressure sensor
JP2001332746A (en) * 2000-05-25 2001-11-30 Matsushita Electric Works Ltd Method for manufacturing semiconductor pressure sensor
JP2010504529A (en) * 2006-09-19 2010-02-12 ローズマウント エアロスペイス インコーポレイテッド Converter for use in harsh environments

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JPS55150277A (en) * 1979-05-11 1980-11-22 Hitachi Ltd Semiconductor displacement converter
JPH06125096A (en) * 1992-10-09 1994-05-06 Mitsubishi Electric Corp Semiconductor pressure sensor
JPH09280972A (en) * 1996-04-12 1997-10-31 Denso Corp Manufacture of semiconductor pressure sensor
JP2000131170A (en) * 1998-10-28 2000-05-12 Hitachi Car Eng Co Ltd Method of mounting pressure sensor
JP2000298071A (en) * 1999-04-15 2000-10-24 Matsushita Electric Works Ltd Structure for semiconductor pressure sensor
JP2001332746A (en) * 2000-05-25 2001-11-30 Matsushita Electric Works Ltd Method for manufacturing semiconductor pressure sensor
JP2010504529A (en) * 2006-09-19 2010-02-12 ローズマウント エアロスペイス インコーポレイテッド Converter for use in harsh environments

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