JP2000295530A5 - - Google Patents
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- JP2000295530A5 JP2000295530A5 JP1999100046A JP10004699A JP2000295530A5 JP 2000295530 A5 JP2000295530 A5 JP 2000295530A5 JP 1999100046 A JP1999100046 A JP 1999100046A JP 10004699 A JP10004699 A JP 10004699A JP 2000295530 A5 JP2000295530 A5 JP 2000295530A5
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- JP
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- Prior art keywords
- read
- skip
- pixels
- solid
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000006243 chemical reaction Methods 0.000 description 6
- 230000003321 amplification Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Description
【特許請求の範囲】
【請求項1】 2次元に配置された光電変換画素をもち、前記光電変換画素にランダムアクセスする固体撮像装置であって、
任意に指定された画素を読み出す第1スキップ読み出しモードと、前記第1スキップ読み出しモードで読み出された画像枠より小さい画像領域を読み出す第2スキップ読み出しモードとを有し、
前記第1及び第2スキップ読み出しモードにおいて読み出す画素数は等しいことを特徴とする固体撮像装置。
【請求項2】 前記光電変換画素の各々の上に、複数個の色分解フィルタを配置した基本単位を形成し、
前記第1スキップ読み出しモードは、任意に指定された前記基本単位を読み出し、
前記第2スキップ読み出しモードは、前記第1スキップ読み出しモードで読み出された前記画像枠より小さい画像領域を読み出すことを特徴とする請求項1記載の固体撮像装置。
【請求項3】 前記光電変換画素が配された画素領域内に増幅トランジスタを有することを特徴とする請求項1記載の固体撮像装置。
【請求項4】 前記ランダムアクセスにおいて、第1の選択線と該第1の選択線に直交する第2の選択線により画素の選択を行なうことを特徴とする請求項1ないし3のいずれかに記載の固体撮像装置。
[Claims]
1. A solid-state image sensor having photoelectric conversion pixels arranged in two dimensions and randomly accessing the photoelectric conversion pixels.
First skip read to read an arbitrarily specified pixelmodeAnd the first skipRead modeSecond skip to read an image area smaller than the image frame read inHas a read mode,
The first and second skipsIn read modeA solid-state image sensor characterized in that the number of pixels to be read out is the same.
2. A basic unit in which a plurality of color separation filters are arranged is formed on each of the photoelectric conversion pixels.
The first skip readmodeReads the arbitrarily specified basic unit,
The second skip readmodeIs the first skipRead modeReads an image area smaller than the image frame read inthingToTo featureThe solid-state image sensor according to claim 1.
3. It has an amplification transistor in the pixel region where the photoelectric conversion pixels are arranged.The solid-state image sensor according to claim 1.
4. The solid-state imaging device according to any one of claims 1 to 3, wherein in the random access, pixels are selected by a first selection line and a second selection line orthogonal to the first selection line. ..
【0011】
【課題を解決するための手段】
上記の課題を解決するための本発明は、2次元に配置された光電変換画素をもち、前記光電変換画素にランダムアクセスする固体撮像装置であって、任意に指定された画素を読み出す第1スキップ読み出しモードと、前記第1スキップ読み出しモードで読み出された画像枠より小さい画像領域を読み出す第2スキップ読み出しモードとを有し、前記第1及び第2スキップ読み出しモードにおいて読み出す画素数を等しくしてある。
0011
[Means for solving problems]
The present invention for solving the above problems is a solid-state image sensor having photoelectric conversion pixels arranged in two dimensions and randomly accessing the photoelectric conversion pixels, and the first skip for reading out arbitrarily designated pixels. It has a read mode and a second skip read mode for reading an image area smaller than the image frame read in the first skip read mode , and the number of pixels read in the first and second skip read modes is made equal. is there.
すなわち、本発明においては、受光部にランダムアクセス可能な固体撮像装置を用いて、画像読み出しエリアをスキップ読み出し及びブロック読み出しを用いて可変することで、センサチップ単体で電子ズーム処理を行う。また、読み出し画像領域を変えても読み出し画素数が変わらないようにしている。
That is, in the present invention, the electronic zoom process is performed by the sensor chip alone by changing the image reading area by using skip reading and block reading using a solid-state image sensor that can randomly access the light receiving unit. Further, the number of read pixels does not change even if the read image area is changed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11100046A JP2000295530A (en) | 1999-04-07 | 1999-04-07 | Solid-state image pickup device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11100046A JP2000295530A (en) | 1999-04-07 | 1999-04-07 | Solid-state image pickup device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2000295530A JP2000295530A (en) | 2000-10-20 |
JP2000295530A5 true JP2000295530A5 (en) | 2006-06-01 |
Family
ID=14263576
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11100046A Pending JP2000295530A (en) | 1999-04-07 | 1999-04-07 | Solid-state image pickup device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2000295530A (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002314868A (en) | 2001-04-13 | 2002-10-25 | Olympus Optical Co Ltd | Imaging device |
JP4503878B2 (en) | 2001-04-27 | 2010-07-14 | オリンパス株式会社 | Imaging apparatus and imaging method |
JP4658401B2 (en) * | 2001-07-27 | 2011-03-23 | オリンパス株式会社 | Imaging device |
KR100594236B1 (en) | 2003-12-30 | 2006-06-30 | 삼성전자주식회사 | Solid state image sensing device providing for processing the image data without a frame memory buffer and driving method thereof |
JP4624065B2 (en) | 2004-10-13 | 2011-02-02 | オリンパス株式会社 | Imaging device |
JP2006129211A (en) | 2004-10-29 | 2006-05-18 | Olympus Corp | Image pickup device |
JP3868446B2 (en) | 2004-10-29 | 2007-01-17 | オリンパス株式会社 | Imaging device |
WO2010023903A1 (en) | 2008-09-01 | 2010-03-04 | 株式会社ニコン | Imaging element and imaging device |
JP5284013B2 (en) | 2008-09-01 | 2013-09-11 | キヤノン株式会社 | Imaging apparatus, control method therefor, and program |
US20120002084A1 (en) * | 2010-06-30 | 2012-01-05 | True Vision Systems, Inc. | Systems, apparatus, and methods for digital image capture with variable density display and high resolution electronic zoom |
-
1999
- 1999-04-07 JP JP11100046A patent/JP2000295530A/en active Pending
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