JP2000294712A - Resin sealed semiconductor device and manufacture thereof - Google Patents
Resin sealed semiconductor device and manufacture thereofInfo
- Publication number
- JP2000294712A JP2000294712A JP2000021678A JP2000021678A JP2000294712A JP 2000294712 A JP2000294712 A JP 2000294712A JP 2000021678 A JP2000021678 A JP 2000021678A JP 2000021678 A JP2000021678 A JP 2000021678A JP 2000294712 A JP2000294712 A JP 2000294712A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- heat spreader
- semiconductor device
- island
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置とその
製造方法に関し、特にパッケージからの放熱性を高めた
樹脂封止型の半導体装置及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly, to a resin-sealed semiconductor device with improved heat dissipation from a package and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】一般に高消費電力用の半導体装置は、動
作時に内部で熱が発生するために、パッケージの放熱性
を高める手段を備えた半導体装置が種々提案されてい
る。2. Description of the Related Art Generally, a semiconductor device for high power consumption generates heat internally during operation. Therefore, various semiconductor devices having means for improving heat dissipation of a package have been proposed.
【０００３】例えば、図１２に示すように、半導体素子
１０１を搭載したアイランド１０２とインナーリード１
０４を有するリードフレーム１０３と、ヒートスプレッ
ダ１０６とを備え、ヒートスプレッダ１０６とアイラン
ド１０２及びリードフレーム１０３が低融点金属メッキ
１０５で固定された樹脂封止型半導体装置が提供されて
いる。For example, as shown in FIG. 12, an island 102 on which a semiconductor element 101 is mounted and an inner lead 1
There is provided a resin-encapsulated semiconductor device including a lead frame 103 having a substrate 04 and a heat spreader 106, wherein the heat spreader 106, the island 102, and the lead frame 103 are fixed by low-melting metal plating 105.
【０００４】また、ヒートスプレッダ１０６とアイラン
ド１０２が接着剤で接着された例が特開平５−３６８６
２号公報にて提案されている。An example in which the heat spreader 106 and the island 102 are bonded with an adhesive is disclosed in Japanese Patent Laid-Open Publication No. Hei 5-3686.
No. 2 proposes this.
【０００５】[0005]
【発明が解決しようとする課題】然しながら、上述のよ
うな従来の樹脂封止型半導体装置では、それぞれ問題点
を有している。However, the above-mentioned conventional resin-encapsulated semiconductor devices have respective problems.
【０００６】即ち、低融点金属メッキでアイランドとヒ
ートスプレッダとを固定する例では、樹脂の封入時に低
融点金属メッキが溶融状態にありアイランドとヒートス
プレッダが確実に固定されていない。この為に、ヒート
スプレッダとアイランドとの接触が完全でない場合が存
在する。また、ヒートスプレッダとアイランドとを接着
剤を使用して接着する例にあっては、接着剤が高価であ
り、製造コストが高騰すると云う欠点が存在する。That is, in the example in which the island and the heat spreader are fixed by the low-melting-point metal plating, the low-melting-point metal plating is in a molten state when the resin is filled, and the island and the heat spreader are not securely fixed. For this reason, there is a case where the contact between the heat spreader and the island is not perfect. Further, in the example in which the heat spreader and the island are bonded using an adhesive, there is a disadvantage that the adhesive is expensive and the manufacturing cost increases.
【０００７】本発明の目的は、上記した従来技術の欠点
を改良し、リードフレームの一部とヒートスプレッダと
が接着剤で接着されること無く確実に接触した状態を保
ちつつ樹脂封止された樹脂封止型半導体装置を提供する
ことにある。SUMMARY OF THE INVENTION An object of the present invention is to improve the above-mentioned disadvantages of the prior art, and to provide a resin-sealed resin while maintaining a state in which a part of a lead frame and a heat spreader are securely contacted without being bonded with an adhesive. An object of the present invention is to provide a sealed semiconductor device.
【０００８】[0008]
【課題を解決するための手段】本発明に係る第１の形態
としては、半導体素子を搭載したアイランドを有するリ
ードフレームと、半導体素子から発生する熱を拡散する
ヒートスプレッダとを備えた樹脂封止型半導体装置にお
いて、ヒートスプレッダの上面とアイランドの底面とが
接着剤の介在なしに接触すると共に、周辺部においてヒ
ートスプレッダの一部とリードフレームの一部が接触状
態で樹脂封止された事を特徴とする。According to a first aspect of the present invention, there is provided a resin-sealed type including a lead frame having an island on which a semiconductor element is mounted and a heat spreader for diffusing heat generated from the semiconductor element. The semiconductor device is characterized in that the top surface of the heat spreader and the bottom surface of the island are in contact with each other without adhesive, and a part of the heat spreader and a part of the lead frame are resin-sealed in a peripheral portion in a contact state. .
【０００９】また、第２の形態としては、リードフレー
ムのアイランド上に半導体素子を貼り付けるマウント工
程と、リードフレームのインナリードと、半導体素子の
ボンディングパッドとを接続するボンディング工程と、
下金型の中にヒートスプレッダを供給する工程と、ヒー
トスプレッダの上に半導体素子を搭載した前記リードフ
レームを接触状態で供給する工程と、上金型と下金型で
リードフレームとヒートスプレッダの周辺部分を押えつ
つ上及び下金型の凹部内に溶融樹脂を圧入する工程と、
樹脂の硬化後にヒートスプレッダの吊りピンを切断する
工程とから構成された事を特徴とする。Further, as a second mode, a mounting step of attaching a semiconductor element on an island of a lead frame, a bonding step of connecting an inner lead of the lead frame and a bonding pad of the semiconductor element,
A step of supplying a heat spreader into a lower mold, a step of supplying the lead frame in which the semiconductor element is mounted on the heat spreader in a contact state, and a part around the lead frame and the heat spreader in the upper mold and the lower mold. Pressing the molten resin into the recesses of the upper and lower molds while holding down,
Cutting the suspension pins of the heat spreader after the resin is cured.
【００１０】[0010]
【発明の実施の形態】本発明の樹脂封止型半導体装置
は、上記した従来技術に於ける問題点を解決する為、半
導体素子を搭載したアイランドを有するリードフレーム
と、半導体素子から発生する熱を拡散するヒートスプレ
ッダを備えた樹脂封止型半導体装置において、ヒートス
プレッダとリードフレームのアイランド底部とを接触状
態にし、かつ、ヒートスプレッダとリードフレームと
を、金型で挟みこんで固定したまま樹脂封止したので、
樹脂封入によってヒートスプレッダの位置がズレる事な
くリードフレームとの接触状態を保持する事ができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS In order to solve the above-mentioned problems in the prior art, a resin-encapsulated semiconductor device of the present invention has a lead frame having an island on which a semiconductor element is mounted, and a heat generated from the semiconductor element. In a resin-sealed semiconductor device provided with a heat spreader that spreads the heat, the heat spreader and the lead frame are brought into contact with the island bottom, and the heat spreader and the lead frame are resin-sealed while being fixed by being sandwiched by a mold. So
By the resin sealing, the contact state with the lead frame can be maintained without shifting the position of the heat spreader.
【００１１】[0011]
【発明の実施例】以下に、本発明に係る樹脂封止型半導
体装置の具体的構成を図面を用いながら説明する。図１
は、本発明の樹脂封止型半導体装置の斜視図、図２
（ａ）は図１のＡ−Ａ‘の断面図、図２（ｂ）は、図１
のＢ−Ｂ’の断面図ある。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of a semiconductor device according to the present invention; FIG.
FIG. 2 is a perspective view of the resin-encapsulated semiconductor device of the present invention.
FIG. 2A is a cross-sectional view taken along the line AA ′ of FIG. 1, and FIG.
BB 'of FIG.
【００１２】樹脂封止型半導体装置１０は、アイランド
１２、リードフレーム１４、半導体素子１１から発生す
る熱を拡散するヒートスプレッダ１５を備えている。ア
イランド１２上には半導体素子１１が搭載されている。
リードフレーム１４は、半導体素子１１と金属細線２２
により接続されるインナーリード１３とパッケージから
外部に導出された外部リード２６を備える。ヒートスプ
レッダ１５は突部２７を有し、その突部２７はアイラン
ド１２の底部１２ａと所定の幅、あるいは点の接触状態
で樹脂封止により固定されている。従って、ヒートスプ
レッダ１５とアイランド１２は接着剤により固着された
ものではない。また、ヒートスプレッダ１５の周辺部が
リードフレーム１４の吊リードと接触状態であるので熱
拡散効率をより高めている。The resin-sealed semiconductor device 10 includes an island 12, a lead frame 14, and a heat spreader 15 for diffusing heat generated from the semiconductor element 11. The semiconductor element 11 is mounted on the island 12.
The lead frame 14 is composed of the semiconductor element 11 and the thin metal wire 22.
And an external lead 26 led out of the package. The heat spreader 15 has a protruding portion 27, and the protruding portion 27 is fixed to the bottom portion 12a of the island 12 with a predetermined width or a point by a resin seal. Therefore, the heat spreader 15 and the island 12 are not fixed by the adhesive. Further, since the peripheral portion of the heat spreader 15 is in contact with the suspension leads of the lead frame 14, the heat diffusion efficiency is further improved.
【００１３】図３は、切断される前のリードフレーム１
４を示す図面である。リードフレーム１４は、中央にア
イランド１２を有し、アイランド１２の周辺にインナリ
ード１３を有している。インナーリード１３とアウター
リード２６にはタイバー１７が接続されている。アイラ
ンド１２の四隅には吊リード３３が接続されている。更
に、リードフレーム１４には、押し穴１８が形成されて
おり、この穴を用いて後述するヒートスプレッダ１５の
吊りピン１５ｂを切断する。また、リードフレーム１４
は、リードフレーム位置決め用穴３０を備える。寸法Ｍ
は、モールドライン寸法であり、この寸法の内部に樹脂
が封入される。寸法Ｂは、タイバー間寸法である。FIG. 3 shows a lead frame 1 before cutting.
FIG. The lead frame 14 has the island 12 at the center and the inner lead 13 around the island 12. The tie bar 17 is connected to the inner lead 13 and the outer lead 26. Hanging leads 33 are connected to the four corners of the island 12. Further, a push hole 18 is formed in the lead frame 14, and a hanging pin 15b of a heat spreader 15 described later is cut using this hole. Also, the lead frame 14
Has a lead frame positioning hole 30. Dimension M
Is a mold line dimension, and resin is sealed inside this dimension. The dimension B is a dimension between tie bars.
【００１４】図４は、切断前のヒートスプレッダ１５を
示す図面である。ヒートスプレッダ１５は、放熱部１５
ａ、外枠部１５ｃ、放熱部１５ａと外枠部１５ｃをつな
ぐ吊ピン部１５ｂを備える。放熱部１５ａには、複数の
ディンプル２０とスリット２１と突起２７とが形成され
ている。この放熱部１５ａの突起２７が樹脂で封入した
際にアイランド１２と接触し、放熱効果を高める。ディ
ンプル２０及びスリット２１を形成する事により、樹脂
の流動性及び樹脂とヒートスプレッダ１５ａとの密着性
を高めることができる。なお、ディンプル２０は小さな
窪みであり、スリット２１は開口部である。寸法Ａは、
樹脂止め枠寸法である。１８ａは、図３の押し穴１８に
対応する領域である。FIG. 4 is a view showing the heat spreader 15 before cutting. The heat spreader 15 includes a heat radiating section 15.
a, an outer frame portion 15c, and a suspending pin portion 15b connecting the heat radiating portion 15a and the outer frame portion 15c. A plurality of dimples 20, slits 21, and protrusions 27 are formed in the heat radiating portion 15a. When the protrusion 27 of the heat radiating portion 15a is sealed with resin, the protrusion 27 comes into contact with the island 12 to enhance the heat radiating effect. By forming the dimples 20 and the slits 21, the fluidity of the resin and the adhesion between the resin and the heat spreader 15a can be improved. The dimple 20 is a small depression, and the slit 21 is an opening. Dimension A is
It is the size of the resin stopper frame. Reference numeral 18a is an area corresponding to the push hole 18 in FIG.
【００１５】図５は、図４のヒートスプレッダ１５の吊
ピン部１５ｂの部分をより詳細に示す拡大平面図であ
る。吊りピン部１５ｂは、そのモールドライン１６との
交点にクビレ３２を持つ。このくびれ３２は、後述する
切断方法から明らかなように吊りピン切断性を向上させ
る。このクビレ３２の代わりにノッチあるいは切り欠き
を設けても同様な効果をあげることができる。FIG. 5 is an enlarged plan view showing a portion of the extending portion 15b of the heat spreader 15 of FIG. 4 in more detail. The hanging pin portion 15b has a crack 32 at the intersection with the mold line 16. The constriction 32 improves the hanging pin cutting property as apparent from a cutting method described later. A similar effect can be obtained by providing a notch or a notch in place of the crack 32.
【００１６】図６は、本発明の樹脂封止型半導体装置の
製造方法を示す説明図である。図に従って本発明の樹脂
封止型半導体装置の製造方法について説明する。なお、
図６は図３のリードフレームと図４のヒートスプレッダ
のＸ−Ｙ断面図である。FIG. 6 is an explanatory view showing a method of manufacturing a resin-sealed semiconductor device according to the present invention. A method for manufacturing a resin-sealed semiconductor device according to the present invention will be described with reference to the drawings. In addition,
FIG. 6 is an XY cross-sectional view of the lead frame of FIG. 3 and the heat spreader of FIG.
【００１７】図６（ａ）に示すように、リードフレーム
１４のアイランド１２上に半導体素子１１を樹脂接着剤
などにより貼り付ける（マウント工程）。次に、リード
フレーム１４のインナリード１３と、半導体素子１１の
ボンディングパッド（図示せず）とを金属細線２２で接
続する。また、リードフレーム１４に押し穴１８を設け
る（ボンディング工程）。As shown in FIG. 6A, the semiconductor element 11 is attached on the island 12 of the lead frame 14 with a resin adhesive or the like (mounting step). Next, the inner leads 13 of the lead frame 14 and the bonding pads (not shown) of the semiconductor element 11 are connected by thin metal wires 22. Further, a push hole 18 is provided in the lead frame 14 (bonding step).
【００１８】次に、図６（ｂ）に示すように、下金型２
３の凹部にヒートスプレッダ１５を投入する。その際、
下金型２３にはピン（図示せず）が設けられており、ヒ
ートスプレッダ１５に設けられた位置決め穴３１を下金
型２３のピンに挿入することにより位置合わせされ、ヒ
ートスプレッダ１５は、下金型２３により支えられる。Next, as shown in FIG.
The heat spreader 15 is put into the concave portion of No. 3. that time,
The lower mold 23 is provided with a pin (not shown), and the positioning is performed by inserting a positioning hole 31 provided in the heat spreader 15 into the pin of the lower mold 23. 23 supported.
【００１９】次に、図６（ｂ）に示すように、ヒートス
プレッダ１５の上に半導体素子１１を搭載したリードフ
レーム１４をヒートスプレッダ１５とリードフレーム１
４のアイランド底部１２とを接触状態にし、リードフレ
ーム１４を下金型２３に供給する。リードフレーム１４
は、その位置決め穴３０に下金型２３のピンが挿入され
ることにより、ヒートスプレッダ１５と同様に位置決め
される。次に、この上に上金型２４が被せられる。次
に、金型内に溶融樹脂２５を圧入する。この時、リード
フレーム１４とヒートスプレッダ１５の周辺部分は、下
金型２３と上金型２４によって押さえられているので、
両者の位置がズレる虞がない。Next, as shown in FIG. 6B, the lead frame 14 having the semiconductor element 11 mounted on the heat spreader 15 is connected to the heat spreader 15 and the lead frame 1.
4 is brought into contact with the island bottom 12, and the lead frame 14 is supplied to the lower mold 23. Lead frame 14
Is positioned in the same manner as the heat spreader 15 by inserting the pins of the lower mold 23 into the positioning holes 30. Next, the upper mold 24 is put on this. Next, the molten resin 25 is pressed into the mold. At this time, since the peripheral portions of the lead frame 14 and the heat spreader 15 are pressed by the lower mold 23 and the upper mold 24,
There is no risk that the positions of the two will shift.
【００２０】樹脂の硬化後、図６（ｄ）に示すように、
上金型２４を取り外した後、リードフレーム１４の押し
穴１８から押しピン３３を挿入し、ヒートスプレッダ外
枠部１５の領域１８ａを押す。これによりヒートスプレ
ッダ１５の吊りピン１５ｂのくびれ３２がひきちぎら
れ、吊ピン１５ｂが切断される。以上のような工程によ
り、本発明の樹脂封止型半導体装置が製造される。After the resin is cured, as shown in FIG.
After removing the upper mold 24, the push pin 33 is inserted through the push hole 18 of the lead frame 14, and the area 18a of the outer frame portion 15 of the heat spreader is pushed. Thereby, the constriction 32 of the suspension pin 15b of the heat spreader 15 is cut off, and the suspension pin 15b is cut. Through the steps described above, the resin-encapsulated semiconductor device of the present invention is manufactured.
【００２１】図７（ａ）乃至（ｄ）は、本願発明の半導
体装置のヒートスプレッダ１５の樹脂止め枠２８の寸法
Ａと、モールドライン寸法Ｍと、タイバー間寸法Ｂとの
関係を示す図面であり、またその作用及び効果を説明す
るための図面である。樹脂止め枠寸法Ａは、モールドラ
イン寸法Ｍより大きく、かつ、タイバー間寸法Ｂより小
さく作られている。FIGS. 7A to 7D are diagrams showing the relationship among the dimension A of the resin stopper frame 28, the mold line dimension M, and the dimension B between the tie bars of the heat spreader 15 of the semiconductor device of the present invention. 3 is a diagram for explaining the operation and effect thereof. The resin stopper frame dimension A is made larger than the mold line dimension M and smaller than the tie bar distance B.
【００２２】ヒートスプレッダ１５及びリードフレーム
１４は、下金型２３に対し、所定の精度、例えば＋−５
０μｍの精度で位置決めピンにより位置決めされてい
る。この場合、樹脂止め枠寸法Ａは、モールドライン寸
法Ｍに比べて左右方向で夫々５０μｍ以上大きく設定さ
れている。従って、図７（ｂ）に示されるように、ヒー
トスプレッダ１５が５０μｍずれて位置決めされたとし
ても（図７（ｂ）ではヒートスプレッダ１５が下金型２
３に対し左方向に５０μｍずれている）、ヒートスプレ
ッダ外枠１５ｃの下側がモールド樹脂２５に覆われるこ
とは無い（図７(ｂ)の円Ｃ参照）。従って、封入金型の
ズレが生じたとしても、ヒートスプレッダ１５の樹脂止
め部２８がモールド樹脂２５内へ食い込むことを防止で
きる。一方、樹脂止め枠寸法Ａがモールドライン寸法Ｍ
に比べて所定精度以下、例えば、モールドライン寸法Ｍ
と同じ寸法に設定されている場合は（図７（ｃ）参
照）、図７（ｄ）に示されるように、ヒートスプレッダ
外枠１５ｃがモールド樹脂２５内に食い込み（図７
（ｄ）の円Ｄ参照）、後工程でヒートスプレッダ外枠１
５ｃを外すことができない。なお、樹脂止め枠寸法Ａが
タイバー間寸法Ｂよりも小さいのは、後工程でタイバー
１７は切断されるものであり、そのタイバー１７がモー
ルド樹脂２５に覆われるのを防ぐためである。The heat spreader 15 and the lead frame 14 are fixed to the lower mold 23 with a predetermined accuracy, for example, + -5.
It is positioned by the positioning pin with an accuracy of 0 μm. In this case, the resin stopper frame size A is set to be larger than the mold line size M by 50 μm or more in the left-right direction. Therefore, as shown in FIG. 7B, even if the heat spreader 15 is positioned with a shift of 50 μm (FIG. 7B), the heat spreader 15 is
3 is shifted leftward by 50 μm), and the lower side of the heat spreader outer frame 15c is not covered with the mold resin 25 (see the circle C in FIG. 7B). Therefore, even if the enclosing mold is displaced, it is possible to prevent the resin stopper 28 of the heat spreader 15 from digging into the mold resin 25. On the other hand, the resin stopper frame size A is the mold line size M
Less than a predetermined accuracy, for example, the mold line dimension M
7 (c), the heat spreader outer frame 15c bites into the mold resin 25 as shown in FIG. 7 (d) (see FIG. 7 (d)).
(See circle D in (d)), heat spreader outer frame 1
5c cannot be removed. The reason why the dimension A of the resin stopper frame is smaller than the dimension B between the tie bars is to prevent the tie bar 17 from being covered with the mold resin 25 in the subsequent step.
【００２３】図８は、本発明の第２の実施例を示す樹脂
封止型半導体装置の断面図である。本実施例において、
樹脂封入した半導体素子１１の裏側は、アイランド１２
及びこれに接触したヒートスプレッダ１５が存在するの
みで、樹脂２５が充填されていない。つまり、ヒートス
プレッダ１５の背面は、樹脂２５で覆われておらず、直
接空気中に露出している。以上の様に構成した場合、ヒ
ートスプレッダ１５の背面が樹脂２５で覆われていない
ので、放熱効果を一層高める事ができる。他の構成につ
いては実施例１の装置とほぼ同一なためその説明を省略
する。FIG. 8 is a sectional view of a resin-sealed semiconductor device according to a second embodiment of the present invention. In this embodiment,
The back side of the resin-filled semiconductor element 11 is an island 12
Further, only the heat spreader 15 in contact with this exists, and the resin 25 is not filled. That is, the back surface of the heat spreader 15 is not covered with the resin 25 and is directly exposed to the air. In the case of the above configuration, since the back surface of the heat spreader 15 is not covered with the resin 25, the heat radiation effect can be further enhanced. The other configuration is almost the same as that of the device of the first embodiment, and the description is omitted.
【００２４】図９は、本発明の第３の実施例を示す樹脂
封止型半導体装置の断面図である。図２（ａ）の装置の
ヒートスプレッダ１５とアイランド１２とが点接触或い
は線接触したものであるが、図９の装置のヒートスプレ
ッダ１５とアイランド１２は面接触の状態で固定されて
いる。このヒートスプレッダ１５及びアイランド１２と
は接着剤により固定されているものでは無い。実施例１
と同様の方法で作成され、ヒートスプレッダ１５及びア
イランド１２は、モールド樹脂２５により固定されてい
る。他の構成については実施例１の装置とほぼ同一なた
めその説明を省略する。FIG. 9 is a sectional view of a resin-sealed semiconductor device according to a third embodiment of the present invention. Although the heat spreader 15 and the island 12 of the apparatus of FIG. 2A are in point contact or line contact, the heat spreader 15 and the island 12 of the apparatus of FIG. 9 are fixed in surface contact. The heat spreader 15 and the island 12 are not fixed by an adhesive. Example 1
The heat spreader 15 and the island 12 are fixed by a mold resin 25. The other configuration is almost the same as that of the device of the first embodiment, and the description is omitted.
【００２５】図１０は、本発明の第４の実施例の樹脂封
止型半導体装置を示す図面である。図９で示された装置
のヒートスプレッダ１５の背面が露出しており、他の構
成については図９の装置とほぼ同一なためその説明を省
略する。FIG. 10 is a view showing a resin-sealed semiconductor device according to a fourth embodiment of the present invention. The back surface of the heat spreader 15 of the device shown in FIG. 9 is exposed, and other configurations are almost the same as those of the device of FIG.
【００２６】図１１は、第３の実施例及び第４の実施例
の半導体装置で使用されるヒートスプレッダ１５の平面
図である。図１１から明らかなように、ディンプル２０
は放熱部にマトリックス上にレイアウトされており、ス
リット２１は放熱部の中心部に形成されている。他の構
成は図４のヒートスプレッダ１５とほぼ同一なのでその
説明を省略する、FIG. 11 is a plan view of the heat spreader 15 used in the semiconductor devices of the third and fourth embodiments. As is apparent from FIG.
Are laid out on a matrix in the heat radiating section, and the slit 21 is formed at the center of the heat radiating section. The other configuration is almost the same as the heat spreader 15 of FIG.
【００２７】[0027]
【発明の効果】従来の樹脂封止型半導体装置（図１２）
は、パッケージ内の位置が不安定で信頼性に欠けていた
が、本発明ではリードフレームとヒートスプレッダとを
上金型と下金型でその周辺部分を押えつつ樹脂を圧入す
るので、封止時に固定接触した状態となり、接着剤を使
用しなくとも接触状態が安定している。また、従来例の
ように接着剤を使用しないので、安価に提供する事がで
きる。低融点金属メッキや接着剤を使わずに、ヒートス
プレッダとリードフレームのアイランドとが直接接触す
るので、熱伝導効果がよくなり、放熱性が向上する。ヒ
ートスプレッダの外枠を樹脂封止半導体の外形よりも大
きくしているので、金型の上下が少しずれた場合にも金
型がヒートスプレッダの外枠を挟みこんでしまい、ヒー
トスプレッダの吊りピンを切断し外枠を除去する工程で
外枠が外れないという不具合が起こらないという効果も
ある。更に、ヒートスプレッダの吊りピン部分にクビ
レ、またはノッチ、あるいは切り欠き等を設けたので、
押し穴からヒートスプレッダを除去するときに容易に除
去できるという効果がある。The conventional resin-encapsulated semiconductor device (FIG. 12)
Although the position inside the package was unstable and lacked reliability, in the present invention, the resin was pressed into the lead frame and the heat spreader while pressing the peripheral part with the upper mold and the lower mold, so that when sealing, The contact state is fixed, and the contact state is stable without using an adhesive. Further, since an adhesive is not used unlike the conventional example, it can be provided at low cost. Since the heat spreader and the island of the lead frame are in direct contact with each other without using a low melting point metal plating or an adhesive, the heat conduction effect is improved and the heat dissipation is improved. Since the outer frame of the heat spreader is larger than the outer shape of the resin-encapsulated semiconductor, even if the mold is slightly displaced up and down, the mold will pinch the outer frame of the heat spreader and cut the hanging pins of the heat spreader. There is also an effect that a problem that the outer frame does not come off in the step of removing the outer frame does not occur. Furthermore, since the hanging pin part of the heat spreader is provided with a crack, a notch, or a notch,
There is an effect that the heat spreader can be easily removed when removing the heat spreader from the push hole.
【００２８】尚、本発明は以上の実施例に限ることなく
本発明の技術思想に基づいて種々の設計変更が可能であ
る。The present invention is not limited to the above-described embodiment, and various design changes can be made based on the technical concept of the present invention.
【図１】図１は、本発明の第１の実施例の樹脂封止型半
導体装置の斜視図ある。FIG. 1 is a perspective view of a resin-sealed semiconductor device according to a first embodiment of the present invention.
【図２】図２は、本発明の第１の実施例を示す樹脂封止
型半導体装置の断面図であり、図２(ａ)は、図１のＡ−
Ａ‘線の断面図であり、図２(ｂ)は、図１のＢ−Ｂ’線
の断面図である。FIG. 2 is a sectional view of a resin-encapsulated semiconductor device according to a first embodiment of the present invention, and FIG.
FIG. 2B is a cross-sectional view taken along line A ′, and FIG. 2B is a cross-sectional view taken along line BB ′ in FIG.
【図３】図３は、本発明の第１の実施例の樹脂封止型半
導体装置に使用するリードフレームを示す要部平面図で
ある。FIG. 3 is a main part plan view showing a lead frame used for the resin-sealed semiconductor device according to the first embodiment of the present invention.
【図４】図４は、本発明の第１尾実施例の樹脂封止型半
導体装置に使用するヒートスプレッダを示す要部平面図
である。FIG. 4 is a main part plan view showing a heat spreader used for a resin-sealed semiconductor device according to a first embodiment of the present invention;
【図５】図５は、本発明の樹脂封止型半導体装置のヒー
トスプレッダの一部の拡大平面図である。FIG. 5 is an enlarged plan view of a part of the heat spreader of the resin-sealed semiconductor device of the present invention.
【図６】図６（ａ）、（ｂ）、（ｃ）、（ｄ）は、本発
明の樹脂封止型半導体装置の製造方法を示す説明図であ
る。6 (a), 6 (b), 6 (c) and 6 (d) are explanatory views showing a method for manufacturing a resin-sealed semiconductor device according to the present invention.
【図７】図７（ａ）〜（ｄ）は、本発明の樹脂封止型半
導体装置の作用及び効果を説明するための断面図であ
る。FIGS. 7A to 7D are cross-sectional views illustrating the operation and effects of the resin-encapsulated semiconductor device of the present invention.
【図８】図８は、本発明の第２の実施例の樹脂封止型半
導体装置を示す断面図である。FIG. 8 is a sectional view showing a resin-sealed semiconductor device according to a second embodiment of the present invention.
【図９】図９は、本発明の第３の実施例の樹脂封止型半
導体装置を示す断面図である。FIG. 9 is a sectional view showing a resin-sealed semiconductor device according to a third embodiment of the present invention.
【図１０】図１０は、本発明の第４の実施例の樹脂封止
型半導体装置を示す断面図である。FIG. 10 is a sectional view showing a resin-sealed semiconductor device according to a fourth embodiment of the present invention.
【図１１】図１１は、本発明の樹脂封止型半導体装置の
別のヒートスプレッダを示す平面図である。FIG. 11 is a plan view showing another heat spreader of the resin-sealed semiconductor device of the present invention.
【図１２】図１２は、従来の樹脂封止型半導体装置の一
例を示す断面図である。FIG. 12 is a sectional view showing an example of a conventional resin-encapsulated semiconductor device.
１０ 樹脂封止型半導体装置 １１ 半導体素子 １２ アイランド １２ａ アイランド底部 １３ インナリード １４ リードフレーム １５ ヒートスプレッダ １５ａ 放熱部 １５ｂ 吊りピン部 １５ｃ 外枠部 １６ モールドライン １７ タイバー １８ 押し穴 １９ モールドライン ２０ ディンプル ２１ スリット ２２ 金属細線 ２３ 下金型 ２４ 上金型 ２５ モールド樹脂 ２６ アウターリード ２７ 突起 ２８ 樹脂止め枠 ２９ 低融点金属めっき ３０ リードフレーム位置決め用穴 ３１ ヒートスプレッダ位置決め用穴 ３２ クビレ ３３ 押しピン DESCRIPTION OF SYMBOLS 10 Resin-sealed semiconductor device 11 Semiconductor element 12 Island 12a Island bottom 13 Inner lead 14 Lead frame 15 Heat spreader 15a Heat radiating part 15b Hanging pin part 15c Outer frame part 16 Mold line 17 Tie bar 18 Push hole 19 Mold line 20 Dimple 21 Slit 22 Fine metal wire 23 Lower mold 24 Upper mold 25 Mold resin 26 Outer lead 27 Projection 28 Resin retaining frame 29 Low melting point metal plating 30 Lead frame positioning hole 31 Heat spreader positioning hole 32 Crevice 33 Push pin
Claims (13)
るリードフレームと、前記半導体素子から発生する熱を
拡散するヒートスプレッダとを備えた樹脂封止型半導体
装置において、前記ヒートスプレッダの上面と前記アイ
ランドの底面とが接着剤の介在なしに接触すると共に、
周辺部において前記ヒートスプレッダの一部と前記リー
ドフレームの一部が接触状態で樹脂封止された事を特徴
とする樹脂封止型半導体装置。1. A resin-encapsulated semiconductor device comprising: a lead frame having an island on which a semiconductor element is mounted; and a heat spreader for diffusing heat generated from the semiconductor element, wherein a top surface of the heat spreader, a bottom surface of the island, Contact without the intervention of adhesive,
A resin-encapsulated semiconductor device, wherein a part of the heat spreader and a part of the lead frame are resin-encapsulated in a peripheral portion in a contact state.
されたことを特徴とする請求項１記載の樹脂封止型半導
体装置。2. The resin-sealed semiconductor device according to claim 1, wherein said heat spreader is formed of a metal plate.
イランドと接触していることを特徴とする請求項１記載
の樹脂封止型半導体装置。3. The resin-encapsulated semiconductor device according to claim 1, wherein the heat spreader is in contact with the island in a suspended state.
覆われず露出していることを特徴とする請求項１記載の
樹脂封止型半導体装置。4. The resin-encapsulated semiconductor device according to claim 1, wherein a back surface of said heat spreader is exposed without being covered with a resin.
プル、または、スリット、あるいは、突起を有したこと
を特徴とする請求項１記載の樹脂封止型半導体装置。5. The resin-encapsulated semiconductor device according to claim 1, wherein the heat spreader has a plurality of dimples, slits, or projections.
プレッダの前記突起と点若しくは線接触していることを
特徴とする請求項５記載の樹脂封止型半導体装置。6. The resin-encapsulated semiconductor device according to claim 5, wherein the bottom surface of the island is in point or line contact with the protrusion of the heat spreader.
有し、前記吊ピン部にくびれあるいは、切り欠き、もし
くは、ノッチを有することを特徴とする請求項１記載の
樹脂封止形半導体装置。7. The resin-encapsulated semiconductor device according to claim 1, wherein the heat spreader has a suspension pin portion, and the suspension pin portion has a constriction, a notch, or a notch.
り大きく、かつリードフレームタイバー部分より小さい
樹脂止め枠を有することを特徴とする請求項１記載の樹
脂封止形半導体装置。8. The resin-encapsulated semiconductor device according to claim 1, wherein the heat spreader has a resin stopper frame that is larger than a mold part and smaller than a lead frame tie bar part.
たアイランドを有するリードフレームと、前記アイラン
ドの背面に直接接触したヒートスプレッダとを備え、前
記半導体素子、前記アイランド及び前記ヒートスプレッ
ダが樹脂封止されていることを特徴とする樹脂封止型半
導体装置。9. A semiconductor device, comprising: a lead frame having an island on which the semiconductor element is mounted; and a heat spreader in direct contact with the back surface of the island, wherein the semiconductor element, the island, and the heat spreader are resin-sealed. A resin-encapsulated semiconductor device.
から延在した吊リードを更に有し、前記ヒートスプレッ
ダは、その隅に少なくとも一つの吊ピン部を備え、前記
吊リード及び前記吊ピンが直接接触した状態で樹脂封止
されていることを特徴とする請求項９記載の樹脂封止型
半導体装置。10. The island further includes a suspension lead extending from at least one corner, and the heat spreader includes at least one suspension pin at the corner, and the suspension lead and the suspension pin are in direct contact with each other. The resin-sealed semiconductor device according to claim 9, wherein the semiconductor device is sealed with a resin in a state.
一つの突起が設けられ、前記突起により前記ヒートスプ
レッダが前記アイランドの背面と点若しくは線接触して
いることを特徴とする請求項１０記載の樹脂封止型半導
体装置。11. The resin-encapsulated semiconductor according to claim 10, wherein the heat spreader is provided with at least one projection, and the projection makes a point or line contact with the back surface of the island. apparatus.
にくびれあるいは切り欠き、もしくはノッチが設けられ
ていることを特徴とする請求項１１記載の樹脂封止型半
導体装置。12. The resin-encapsulated semiconductor device according to claim 11, wherein a constriction, a notch, or a notch is provided in the extending portion of the heat spreader.
体素子を貼り付けるマウント工程と、前記リードフレー
ムのインナリードと、前記半導体素子のボンディングパ
ッドとを接続するボンディング工程と、下金型の中にヒ
ートスプレッダを供給する工程と、前記ヒートスプレッ
ダの上に前記半導体素子を搭載した前記リードフレーム
を接触状態で供給する工程と、上金型と前記下金型で前
記リードフレームと前記ヒートスプレッダの周辺部分を
押えつつ前記上及び下金型の凹部内に溶融樹脂を圧入す
る工程と、樹脂の硬化後に前記ヒートスプレッダの吊り
ピンを切断する工程とから構成された事を特徴とする樹
脂封止型半導体装置の製造方法。13. A mounting step of attaching a semiconductor element on an island of a lead frame, a bonding step of connecting an inner lead of the lead frame and a bonding pad of the semiconductor element, and placing a heat spreader in a lower mold. Supplying the lead frame having the semiconductor element mounted thereon on the heat spreader in a contact state, and pressing the peripheral portion of the lead frame and the heat spreader with an upper mold and a lower mold. A method for manufacturing a resin-encapsulated semiconductor device, comprising: a step of press-fitting a molten resin into recesses of upper and lower molds; and a step of cutting a suspension pin of the heat spreader after the resin is cured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000021678A JP3317951B2 (en) | 1999-02-04 | 2000-01-31 | Resin-sealed semiconductor device and method of manufacturing the same |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2701299 | 1999-02-04 | ||
| JP11-27012 | 1999-02-04 | ||
| JP2000021678A JP3317951B2 (en) | 1999-02-04 | 2000-01-31 | Resin-sealed semiconductor device and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000294712A true JP2000294712A (en) | 2000-10-20 |
| JP3317951B2 JP3317951B2 (en) | 2002-08-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2000021678A Expired - Fee Related JP3317951B2 (en) | 1999-02-04 | 2000-01-31 | Resin-sealed semiconductor device and method of manufacturing the same |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003124406A (en) * | 2001-08-06 | 2003-04-25 | Denso Corp | Semiconductor device |
| US7030505B2 (en) | 2002-11-25 | 2006-04-18 | Nec Electronics Corporation | Resin-sealed-type semiconductor device, and production process for producing such semiconductor device |
| JP2010118577A (en) * | 2008-11-14 | 2010-05-27 | Sumitomo Electric Ind Ltd | Resin encapsulated semiconductor device and method of manufacturing the same |
| CN102865939A (en) * | 2012-09-12 | 2013-01-09 | 上海大学 | Laser bonding temperature acquisition system for photoelectric device packaging and method for photoelectric device packaging |
-
2000
- 2000-01-31 JP JP2000021678A patent/JP3317951B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003124406A (en) * | 2001-08-06 | 2003-04-25 | Denso Corp | Semiconductor device |
| US7030505B2 (en) | 2002-11-25 | 2006-04-18 | Nec Electronics Corporation | Resin-sealed-type semiconductor device, and production process for producing such semiconductor device |
| JP2010118577A (en) * | 2008-11-14 | 2010-05-27 | Sumitomo Electric Ind Ltd | Resin encapsulated semiconductor device and method of manufacturing the same |
| CN102865939A (en) * | 2012-09-12 | 2013-01-09 | 上海大学 | Laser bonding temperature acquisition system for photoelectric device packaging and method for photoelectric device packaging |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3317951B2 (en) | 2002-08-26 |
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