JP2000293824A - Thin film magnetic head and its production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To minutely and accurately form a magneto-resistance element. SOLUTION: A thin film magnetic head is provided with a reproducing head and a recording head. The reproducing head is provided with an MR element 5, a lower shield layer 3 and an upper shield layer (lower magnetic pole layer) 9 which shield the MR element 5, and an electrode layer 7 connected to the MR element 5. Further, the reproducing head is provided with a mask layer 22 for etching which is arranged between one face of the MR element 5 and the upper shield layer 9 and is used as a mask to determine the position of the end part on the side opposite to the side facing a recording medium of the MR element 5. A first upper shield gap film 21 is provided between one face (upper face) of the MR element 5 and one face of the mask layer 22 for etching, and a second upper shield gap film 23 is provided between the other face of the mask layer 22 for etching and the upper shield layer 9.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film magnetic head having at least a read magnetoresistive element and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, as the areal recording density of a hard disk drive has been improved, the performance of a thin film magnetic head has been required to be improved. As the thin film magnetic head, a composite type having a structure in which a recording head having an inductive magnetic transducing element for writing and a reproducing head having a magnetoresistive (hereinafter also referred to as MR (Magneto-resistive)) element for reading are stacked. Thin film magnetic heads are widely used. As an MR element, an anisotropic magnetoresistance (AMR) is used.
sistive). AMR element using the effect) and giant magnetoresistance (hereinafter, GMR (Giant Magneto-resistive))
It is written. ) There is a GMR element using the effect, and a reproducing head using the AMR element is an AMR head or simply an MR head.
A reproducing head using a GMR element is called a GM head.
Called the R head. The AMR head has an areal recording density of 1
The GMR head is used as a reproducing head exceeding ² gigabits / (inch) ^2, and has a surface recording density of 3 gigabits / inch.
(Inch) Used as a playback head exceeding ² .

As a method for improving the performance of the reproducing head, a method of changing the MR film from an AMR film to a material or a structure having excellent magnetoresistance such as a GMR film or the like, or an MR film of the MR film is used.
There is a method of optimizing the height. The MR height refers to the length (height) from the end of the MR element on the air bearing surface side to the end on the opposite side, and is controlled by the amount of polishing when processing the air bearing surface. . In addition,
The air bearing surface referred to here is a surface of the thin-film magnetic head facing the magnetic recording medium, and is also called a track surface.

Here, referring to FIGS. 14 to 20,
As an example of a conventional method of manufacturing a thin film magnetic head, an example of a method of manufacturing a composite thin film magnetic head will be described. 14 to 20, (a) shows a cross section perpendicular to the air bearing surface, and (b) shows a cross section of the magnetic pole portion parallel to the air bearing surface.

In this manufacturing method, first, as shown in FIG. 14, for example, alumina (Al2 O3) is formed on a substrate 101 made of, for example, Altic (Al2 O3.TiC).
An insulating layer 102 made of a material having a thickness of about 5 to 10 μm is deposited. Next, a lower shield layer 103 for a reproducing head made of a magnetic material is formed on the insulating layer 102 to a thickness of 2 to 3 μm.

Next, as shown in FIG. 15, for example, alumina or aluminum nitride is sputter deposited to a thickness of 50 to 100 nm on the lower shield layer 103 to form a lower shield gap film 104 as an insulating layer. .
Next, on the lower shield gap film 104, M
An MR film for forming the R element 105 is formed with a thickness of several tens nm. Next, the MR element 105 is formed on the MR film.
Photoresist pattern 1 selectively at the position where
06 is formed. At this time, a photoresist pattern 106 having a T-shaped cross section is formed so that lift-off can be easily performed. Next, using the photoresist pattern 106 as a mask, the MR film is etched by, for example, ion milling to form the MR element 105.
To form Note that the MR element 105 may be a GMR element or an AMR element.

Next, as shown in FIG. 16, a photoresist pattern 10 is formed on the lower shield gap film 104.
Using the mask 6 as a mask, a pair of first electrode layers 107 electrically connected to the MR element 105 is formed to a thickness of several tens of nm. The first electrode layer 107 is made of, for example, TiW, CoP
It is formed by laminating t, TiW, and Ta.

Next, as shown in FIG. 17, the photoresist pattern 106 is lifted off. Next, although not shown in FIG. 17, a pair of second electrode layers electrically connected to the first electrode layer 107 is formed in a predetermined pattern with a thickness of 50 to 100 nm. The second electrode layer is formed of, for example, copper (Cu). First electrode layer 10
The seventh and second electrode layers form electrodes (also referred to as leads) that are electrically connected to the MR element 105.

Next, as shown in FIG. 18, an upper shield gap film 108 as an insulating layer is formed on the lower shield gap film 104 and the MR element 105 by 50 to 15 nm.
The MR element 105 is formed to have a thickness of 0 nm and is buried in the shield gap films 104 and 108. Next, on the upper shield gap film 108, an upper shield layer and lower magnetic pole layer (hereinafter, referred to as an upper shield layer) 109 made of a magnetic material and used for both the read head and the write head is provided.
It is formed to a thickness of about 3 μm.

Next, as shown in FIG. 19, a recording gap layer 110 made of an insulating film, for example, an alumina film is formed on the upper shield layer 109 to a thickness of 0.2 to 0.3 μm. On the gap layer 110, a photoresist layer 111 for determining the throat height is provided for about 1.0 to 2..
A predetermined pattern is formed with a thickness of 0 μm. Next, a first-layer thin-film coil 112 for an inductive recording head is formed on the photoresist layer 111 to a thickness of 3 μm. Next, the photoresist layer 111 and the coil 112
A photoresist layer 113 is formed thereon in a predetermined pattern. Next, a second-layer thin-film coil 114 is formed on the photoresist layer 113 to a thickness of 3 μm. Next, on the photoresist layer 113 and the coil 114,
A photoresist layer 115 is formed in a predetermined pattern.

Next, as shown in FIG.
20 (a) (right side in FIG. 20 (a)), the recording gap layer 11 is formed to form a magnetic path.
0 is partially etched. Next, the recording gap layer 1
10. On the photoresist layers 111, 113, 115,
An upper magnetic pole layer 116 made of a magnetic material for a recording head, for example, permalloy (NiFe) or FeN of a high saturation magnetic flux density material is formed to a thickness of about 3 μm. The upper magnetic pole layer 116 is located at a position behind the coils 112 and 114 in FIG.
And magnetically coupled.

Next, using the upper pole layer 116 as a mask,
The recording gap layer 110 and the upper shield layer (lower pole layer) 109 are etched by ion milling. Next, an overcoat layer 117 made of, for example, alumina is formed on the upper magnetic pole layer 116 to a thickness of 20 to 30 μm. Finally, perform the machining (polishing) of the slider,
The air bearing surfaces of the recording head and the reproducing head are formed to complete the thin-film magnetic head. As shown in FIG. 20, a structure in which each side wall of the upper magnetic pole layer 116, the write gap layer 110, and a part of the upper shield layer (lower magnetic pole layer) 109 is vertically formed in a self-aligned manner is a trim. Called structure. According to this trim structure, it is possible to prevent the effective track width from increasing due to the spread of the magnetic flux generated when writing in a narrow track.

[0013]

SUMMARY OF THE INVENTION In a thin-film magnetic head,
Since a narrow track is required for high recording density, it is required to form an MR element finely.

In the conventional method of manufacturing a thin film magnetic head, as shown in FIGS. 15 to 17, for example, an electrode layer connected to an MR element is formed by a lift-off method. A photoresist pattern having a T-shaped cross section is formed on the substrate, and the photoresist pattern is used as a mask to form a photoresist pattern by ion milling, for example.
The MR film was formed by etching the R film.

When the MR film is etched, an extremely thin lower shield gap film having a thickness of about 50 to 100 nm exists under the MR film. It is necessary to form in the pattern of. Therefore, excessive overetching cannot be performed. As a result, as shown in, for example, JP-A-8-221719, a tapered portion having a gentle slope is formed at the end of the MR element. In the conventional thin film magnetic head, since the tapered portion is formed at the end of the MR element as described above, there are the following problems.

In a conventional method of manufacturing a thin film magnetic head, a material including a plurality of sliders is polished to form an air bearing surface of each slider. At this time, for example, the resistance values of the MR elements included in each slider are monitored, and the polishing is controlled so that the resistance values of the plurality of MR elements become a predetermined value. This makes it possible to form an air bearing surface having excellent flatness.

However, if a tapered portion is formed at the end of the MR element opposite to the air bearing surface,
The MR height becomes non-uniform, and the relationship between the resistance value of the MR element and the MR height becomes unstable. Therefore, conventionally,
There has been a problem that the polishing accuracy of the slider is reduced and the yield of the thin-film magnetic head is reduced.

In a conventional method of manufacturing a thin film magnetic head, an MR element is formed by etching an MR film using a photoresist pattern having a T-shaped cross section as a mask. In this method, the root portion of the T-type photoresist pattern needs to be formed finer than the pattern of the MR element to be formed. Therefore, the conventional method of manufacturing a thin film magnetic head has a problem that it is difficult to miniaturize the MR element.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a thin film magnetic head capable of forming a magnetoresistive element finely and accurately, and a method of manufacturing the same. is there.

[0020]

A thin-film magnetic head according to the present invention comprises: a magnetoresistive element; two shield layers arranged to face each other with the magnetoresistive element interposed therebetween, for shielding the magnetoresistive element; An insulating layer provided between the magnetoresistive element and each of the shield layers, an electrode layer connected to the magnetoresistive element, and one surface of the magnetoresistive element and one shield layer; A position reference layer used as a reference for determining the position of the end of the element opposite to the side facing the recording medium.

In the thin-film magnetic head according to the present invention, the position reference layer disposed between one surface of the magnetoresistive element and one shield layer is provided on the opposite side of the magnetoresistive element from the side facing the recording medium. The position of the edge is determined. This allows
It is possible to form the magnetoresistive element finely and accurately.

In the thin-film magnetic head of the present invention, the position reference layer is used as an etching mask for determining the position of the end of the magnetoresistive element opposite to the side facing the recording medium by etching, for example. Used.

In the thin-film magnetic head according to the present invention, for example, the insulating layer disposed between the magneto-resistive element and one of the shield layers is formed on one side of the magneto-resistive element and one side of the position reference layer. And a second portion disposed between the other surface of the position reference layer and one of the shield layers. In this case, the position reference layer is formed of, for example, a magnetic material.

Further, in the thin film magnetic head of the present invention, the thin film magnetic head further includes magnetic pole portions which are magnetically connected and which oppose each other via a recording gap layer, and each has at least one magnetic pole portion. An inductive magnetic transducer for writing, which has two magnetic layers made of layers and a thin-film coil disposed between the two magnetic layers, may be provided. In this case, one shield layer may double as one of the two magnetic layers.

According to the method of manufacturing a thin film magnetic head of the present invention, a magnetoresistive element, and first and second shield layers arranged to face each other with the magnetoresistive element interposed therebetween for shielding the magnetoresistive element are provided. And a method of manufacturing a thin-film magnetic head comprising: first and second insulating layers provided between a magnetoresistive element and first and second shield layers; and an electrode layer connected to the magnetoresistive element. A step of forming a first shield layer; a step of forming a first insulating layer on the first shield layer; and a step of forming a magnetoresistive element on the first insulating layer. Forming a magnetoresistive film made of the material described above, and forming a lift-off mask on the magnetoresistive film for determining an approximate shape of the magnetoresistive element by etching and forming an electrode layer by a lift-off method And a riff Etching a magnetoresistive film using an off-mask to form a magnetoresistive element whose general shape is determined; and forming an electrode layer by a lift-off method using a lift-off mask. An etching mask layer used as a mask for determining the position of the end of the magnetoresistive element opposite to the side facing the recording medium by etching is formed on the magnetoresistive element having the determined shape. Using a mask layer for etching, etching the magnetoresistive element whose approximate shape has been determined, and determining the position of the end of the magnetoresistive element opposite to the side facing the recording medium. Forming a second insulating layer on the magnetoresistive element and the first insulating layer, and forming a second shield layer on the second insulating layer.

In the method of manufacturing a thin film magnetic head according to the present invention,
The rough shape of the magnetoresistive element is determined by the lift-off mask formed on the magnetoresistive film, and the electrode layer is formed. Then, the position of the end of the magnetoresistive element on the side opposite to the side facing the recording medium is determined by the etching mask layer formed on the magnetoresistive element whose general shape is determined. Thereby, it is possible to form the magnetoresistive element finely and accurately.

In the method of manufacturing a thin-film magnetic head according to the present invention, for example, the step of forming the second insulating layer is performed after the step of forming the electrode layer on the magnetoresistive element whose general shape is determined. After the step of forming the first portion of the second insulating layer and the step of determining the position of the end of the magnetoresistive element,
Forming a second portion of the second insulating layer on the etching mask layer. In this case, the etching mask layer is formed of, for example, a magnetic material.

In the method of manufacturing a thin-film magnetic head according to the present invention, a part of the magnetically coupled side opposite to the recording medium includes magnetic pole parts opposed to each other via a recording gap layer. 2 consisting of at least one layer
The method may include a step of forming an inductive magnetic transducer for writing having one magnetic layer and a thin-film coil disposed between the two magnetic layers. In this case, the second shield layer may also serve as one of the two magnetic layers in the inductive magnetic transducer.

[0029]

Embodiments of the present invention will be described below in detail with reference to the drawings. Here, a thin-film magnetic head and a method of manufacturing the same according to an embodiment of the present invention will be described with reference to FIGS. 1 to 9, (a) shows a cross section perpendicular to the air bearing surface, and (b) shows a cross section of the magnetic pole portion parallel to the air bearing surface.

In the method of manufacturing a thin film magnetic head according to this embodiment, first, as shown in FIG. 1, a substrate 1 made of, for example, AlTiC (Al2 O3.TiC) is formed on a substrate 1 made of, for example, alumina (Al2 O3). Insulating layer 2
It is deposited with a thickness of about 10 μm. Next, on the insulating layer 2,
The lower shield layer 3 for the reproducing head made of a magnetic material is
It is formed to a thickness of 2 to 3 μm.

Next, as shown in FIG. 2, for example, alumina or aluminum nitride is sputter-deposited on the lower shield layer 3 to a thickness of about 50 to 100 nm to form a lower shield gap film 4 as an insulating layer. I do. Next, on the lower shield gap film 4, an MR film made of a material for forming the reproducing MR element 5 is formed with a thickness of several tens nm. Next, a lift-off mask 6 is formed on the MR film by selectively forming a photoresist pattern at a position where the MR element 5 is to be formed. The lift-off mask 6 is used to determine the approximate shape of the MR element 5 by etching and to form an electrode layer described later by a lift-off method. The shape of the lift-off mask 6 is such that the lift-off can be easily performed, for example, a T-shaped cross section.

Next, using the lift-off mask 6, the MR film is etched by, for example, ion milling.
The MR element 5 whose schematic shape is determined is formed. FIG.
Is an enlarged view of the vicinity of the MR element 5 in FIG. As shown in this figure, M at this point
A tapered portion 25a having a gentle slope is formed at an end 25 of the R element 5 on the opposite side (right side in the drawing) to the side facing the recording medium (air bearing surface side). The MR element 5 includes an AMR element, a GMR element,
Alternatively, an element using a magneto-sensitive film exhibiting a magnetoresistance effect such as a TMR (tunnel magnetoresistance effect) element can be used.

Next, as shown in FIG. 3, M is applied to the lower shield gap film 4 by using a lift-off mask 6.
A pair of first electrode layers 7 electrically connected to the R element 5
Is formed to a thickness of several tens of nm. The first electrode layer 7 is formed by stacking, for example, TiW, CoPt, TiW, and Ta.

Next, as shown in FIG. 4, the lift-off mask 6 is lifted off. Next, although not shown in FIG. 4, a pair of second electrode layers electrically connected to the first electrode layer 7 are formed in a predetermined pattern with a thickness of 50 to 100 nm. The second electrode layer is formed of, for example, copper (Cu). The first electrode layer 7 and the second electrode layer form electrodes (also referred to as leads) that are electrically connected to the MR element 5. FIG. 10 shows a plan view corresponding to the state shown in FIG. In FIG. 10, the second electrode layer 18
Is shown.

Next, as shown in FIG. 5, a first upper shield gap film 21 as an insulating layer made of, for example, alumina or aluminum nitride is formed on the lower shield gap film 4 and the MR element 5 by, for example, sputtering.
Is formed to a thickness of about 50 to 150 nm, and the MR element 5 is embedded in the shield gap films 4 and 21.

Next, the first upper shield gap film 21
Of the MR element 5 and the first electrode layer 7, the end 2 on the opposite side (the right side in the figure) of the MR element 5 from the side facing the recording medium by etching,
An etching mask layer 22 used as a mask for determining the position of No. 5 is formed to a thickness of about 0.3 to 0.6 μm. The etching mask layer 22 is used as a reference for determining the position of the end of the MR element 5 on the side opposite to the side facing the recording medium, and corresponds to the position reference layer in the present invention. The etching mask layer 22 is formed of, for example, the same magnetic material as an upper shield layer described later. The position of the end of the etching mask layer 22 opposite to the side facing the recording medium is a desired position of the end of the MR element 5 opposite to the side facing the recording medium.
Further, the etching mask layer 22 may be formed by, for example, a plating method, or may be formed by selectively etching a film formed by sputtering.

Next, as shown in FIG. 6, using the etching mask layer 22, the first upper shield gap film 21 and the MR element 5 are etched by, for example, ion milling. FIG. 13 shows the MR element 5 in FIG.
Is shown in an enlarged manner. As shown in this figure, the taper portion is removed at the end 25 (the right side in the figure) of the MR element 5 opposite to the side facing the recording medium by the etching, and the lower shield gap film 4 is removed.
An end face substantially perpendicular to the surface is formed. Also, MR
The position of the end of the element 5 opposite to the side facing the recording medium is accurately determined.

Next, the second upper shield gap film 2 as an insulating layer made of, for example, alumina or aluminum nitride is formed on the etching mask layer 22 and the exposed lower shield gap film 4 by, for example, sputtering.
3 is formed to a thickness of about 50-150 nm. As a result, the MR element 5, the first upper shield gap film 21, and the etching mask layer 22 are embedded between the lower shield gap film 4 and the second upper shield gap film 23.

Next, as shown in FIG. 7, on the second upper shield gap film 23, an upper shield layer and lower magnetic pole layer (hereinafter, referred to as a "magnetic layer") which is made of a magnetic material and is used for both the read head and the write head. 9) is formed to a thickness of about 3 μm. Thus, a structure is obtained in which the first upper shield gap film 21, the etching mask layer 22, the second upper shield gap film 23, and the upper shield layer 9 are sequentially stacked on the MR element 5.

Next, as shown in FIG. 8, a recording gap layer 10 made of an insulating film, for example, an alumina film is formed on the upper shield layer 9 to a thickness of 0.2 to 0.3 μm. On the gap layer 10, a photoresist layer 11 for determining a throat height is formed in a predetermined pattern with a thickness of about 1.0 to 2.0 μm. Next, a first-layer thin-film coil 12 for an induction type recording head is formed on the photoresist layer 11 to a thickness of 3 μm. Next, a photoresist layer 13 is formed on the photoresist layer 11 and the coil 12 in a predetermined pattern. Next, the second-layer thin-film coil 14 was formed on the photoresist layer 13 by 3 μm.
Formed to a thickness of Next, a photoresist layer 15 is formed on the photoresist layer 13 and the coil 14 in a predetermined pattern.

Next, as shown in FIG.
At a position behind (right side in FIG. 9A) the recording gap layer 10 is partially etched to form a magnetic path. Next, on the recording gap layer 10 and the photoresist layers 11, 13 and 15, a magnetic material for a recording head, for example, a permalloy (NiF
e) or the upper pole layer 16 of FeN is
Formed to a thickness of The upper magnetic pole layer 16 is in contact with the upper shield layer (lower magnetic pole layer) 9 at a position behind the coils 12 and 14 in the drawing, and is magnetically connected.

Next, using the upper magnetic pole layer 16 as a mask, the recording gap layer 10 and the upper shield layer (lower magnetic pole layer) 9 are etched by ion milling. FIG. 9B
As shown in FIG. 3, the upper magnetic pole layer 16, the recording gap layer 10
The structure in which each side wall of a part of the upper shield layer (lower magnetic pole layer) 9 is vertically formed in a self-aligned manner is a trim (Trim).
m) called the structure. According to this trim structure, it is possible to prevent the effective track width from increasing due to the spread of the magnetic flux generated when writing in a narrow track.

Next, an overcoat layer 17 made of, for example, alumina is formed on the upper magnetic pole layer 16 to a thickness of 20 to 30 μm. Finally, machining (polishing) the slider
To form air bearing surfaces of the recording head and the reproducing head, thereby completing the thin-film magnetic head.

Here, the lower shield layer 3 corresponds to the first shield layer in the present invention, and the upper shield layer (lower pole layer) 9 corresponds to the second shield layer in the present invention. The lower shield gap film 4 corresponds to the first insulating layer in the present invention, and the first upper shield gap film 21 corresponds to the first portion of the second insulating layer in the present invention. The upper shield gap film 23 corresponds to the second portion of the second insulating layer in the present invention. The upper shield layer (lower pole layer) 9, recording gap layer 10, upper pole layer 16, and thin-film coils 12, 14 are
This corresponds to the inductive magnetic transducer of the present invention.

FIG. 11 is a plan view of the thin-film magnetic head according to the present embodiment. In FIG. 11, the overcoat layer 17 is omitted. (A) in FIG. 1 to FIG. 9 represents a cross section taken along line AA ′ in FIG.
(B) shows a cross section taken along line BB 'in FIG.

As described above, the thin-film magnetic head according to the present embodiment has a read head and a write head. The read head is arranged so that the MR element 5 and a part of the side facing the recording medium face each other with the MR element 5 interposed therebetween with an insulating layer interposed therebetween, and the lower shield layer 3 for shielding the MR element 5 is provided. And upper shield layer (lower pole layer)
9 and electrode layers 7 and 18 connected to the MR element 5. The write head includes a lower magnetic pole layer (upper shield layer 9) and an upper magnetic pole layer 16 that are magnetically coupled and include magnetic pole parts whose parts facing the recording medium face each other via the recording gap layer 10. The thin film coils 12, 1 disposed between the lower magnetic pole layer (upper shield layer 9) and the upper magnetic pole layer 16 while being insulated from them.
And 4.

The reproducing head according to the present embodiment is further disposed between one surface (upper side in the figure) of the MR element 5 and the upper shield layer 9 and is etched by etching.
The element 5 has an etching mask layer 22 used as a mask for determining the position of the end of the element 5 opposite to the side facing the recording medium. A first upper shield gap film 21 is provided between one surface of the MR element 5 and one surface of the etching mask layer 22, and the other surface of the etching mask layer 22 and the upper shield layer 9 Between them, a second upper shield gap film 23 is provided.

In the present embodiment, the approximate shape of the MR element 5 is determined and the first electrode layer 7 is formed using the lift-off mask 6 formed on the MR film.
The etching mask layer 22 formed on the roughly shaped MR element 5 with the first upper shield gap film 21 interposed therebetween is opposite to the side of the MR element 5 facing the recording medium. The position of the side edge is accurately determined. Therefore, according to the present embodiment, the MR height becomes uniform, and the yield of the thin-film magnetic head is improved.

Further, according to the present embodiment, the thin first upper shield gap film 21 is provided on the MR element 5 having the roughly determined shape, instead of the T-shaped lift-off mask 6 in cross section. Mask layer 2 formed by etching
2, the position of the end of the MR element 5 opposite to the side facing the recording medium is determined, so that the MR element 5 can be finely formed.

From the above, according to the present embodiment,
The MR element 5 can be formed finely and accurately, and the yield of the thin-film magnetic head can be improved.

In this embodiment, between the MR element 5 and the coils 12 and 14 of the recording head, the first upper shield gap film 21, the etching mask layer 22, the first 2 upper shield gap film 23
And an upper shield layer 9. Here, the etching mask layer 22 is formed of a magnetic material. Therefore, the etching mask layer 22 has a shielding function. Therefore, in the present embodiment, a structure is obtained in which two independent shield layers exist between the MR element 5 and the coils 12 and 14 of the recording head. With this structure, according to the present embodiment, the shielding function for the MR element 5 is improved between the MR element 5 and the coils 12 and 14 of the recording head. , 14 can be reduced. Therefore, according to the present embodiment, the performance of the reproducing head can be improved.

Note that the present invention is not limited to the above embodiment. For example, in the above embodiment, the etching mask layer 22 is formed of a magnetic material, and the position of the end of the MR element 5 on the side opposite to the side facing the recording medium is determined in the etching mask layer 22. In addition to the function, it has the function of a shield layer. However, as long as the etching mask layer 22 does not have the function of a shield layer, the etching mask layer 22 may be formed of a material other than a magnetic material, for example, a metal or an insulating material.

In the above embodiment, a thin film magnetic head having a structure in which a reading MR element is formed on the substrate side and an inductive magnetic transducer for writing is stacked thereon has been described. The order may be reversed.

That is, an inductive magnetic transducer for writing may be formed on the substrate side, and an MR element for reading may be formed thereon. In such a structure, for example, the magnetic film having the function of the upper magnetic pole layer shown in the above-described embodiment is formed on the substrate side as a lower magnetic pole layer, and the magnetic film having the above-described structure is opposed to the magnetic pole layer via a recording gap film. It can be realized by forming the magnetic film having the function of the lower magnetic pole layer shown in the embodiment as the upper magnetic pole layer. In this case, it is preferable to use the upper magnetic pole layer of the induction type magnetic transducer and the lower shield layer of the MR element together.

In the thin-film magnetic head having such a structure, it is preferable to use a substrate having a concave portion. Then, by forming a coil portion in the concave portion of the base,
The size of the thin film magnetic head itself can be further reduced.

Further, as a different form, all the insulating layers formed between the thin film coils constituting the coil portion of the induction type magnetic transducer may be inorganic insulating layers.

When the thin-film magnetic head is used only for reading, the thin-film magnetic head may be provided with only a reading magnetoresistive element.

[0058]

As described above, according to the thin-film magnetic head according to any one of the first to sixth aspects, the magnetoresistive element is positioned between the magnetoresistive element and one of the shield layers. Since the position of the end of the element opposite to the side facing the recording medium is determined, there is an effect that the magnetoresistive element can be finely and accurately formed.

According to the thin film magnetic head of the fourth aspect, the first portion of the insulating layer is provided between the magnetoresistive element and the position reference layer and between the position reference layer and one of the shield layers. And the second portion are provided, and the position reference layer is formed of a magnetic material, so that the effect of further improving the shielding function for the magnetoresistive element can be achieved.

According to the method of manufacturing a thin-film magnetic head of any one of claims 7 to 11, the magneto-resistive element is formed by the etching mask layer disposed between the magneto-resistive element and one of the shield layers. Since the position of the end opposite to the side facing the recording medium is determined, it is possible to form the magnetoresistive element finely and accurately.

According to the method of manufacturing a thin film magnetic head of the ninth aspect, the insulating layer is provided between the magnetoresistive element and the etching mask layer and between the etching mask layer and one of the shield layers. Since the first portion and the second portion are provided and the etching mask layer is formed of a magnetic material, the effect of further improving the shielding function for the magnetoresistive element is achieved.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view for explaining one step in a method of manufacturing a thin-film magnetic head according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view for explaining a step following the step shown in FIG.

FIG. 3 is a cross-sectional view for explaining a step following the step shown in FIG. 2;

FIG. 4 is a cross-sectional view for explaining a step following the step shown in FIG. 3;

FIG. 5 is a cross-sectional view for explaining a step following the step shown in FIG. 4;

FIG. 6 is a cross-sectional view for explaining a step following the step shown in FIG. 5;

FIG. 7 is a cross-sectional view for explaining a step following the step shown in FIG. 6;

FIG. 8 is a cross-sectional view for explaining a step following the step shown in FIG. 7;

FIG. 9 is a cross-sectional view for explaining a step following the step shown in FIG. 8;

FIG. 10 is a plan view corresponding to FIG. 4 for explaining one step in the method of manufacturing the thin-film magnetic head according to one embodiment of the present invention;

FIG. 11 is a plan view of a thin-film magnetic head according to one embodiment of the present invention.

FIG. 12 is an enlarged sectional view showing the vicinity of an MR element in FIG. 2;

FIG. 13 is an enlarged sectional view showing the vicinity of the MR element in FIG. 6;

FIG. 14 is a cross-sectional view for explaining one step in a conventional method of manufacturing a thin-film magnetic head.

FIG. 15 is a sectional view for illustrating a step following the step shown in FIG. 14;

FIG. 16 is a cross-sectional view for explaining a step following the step shown in FIG. 15;

FIG. 17 is a sectional view for illustrating a step following the step shown in FIG. 16;

FIG. 18 is a sectional view for illustrating a step following the step shown in FIG. 17;

FIG. 19 is a sectional view for illustrating a step following the step shown in FIG. 18;

FIG. 20 is a cross-sectional view for explaining a step following the step shown in FIG. 19;

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Substrate, 2 ... Insulating layer, 3 ... Lower shield layer, 4 ... Lower shield gap film, 5 ... MR element, 6 ... Lift-off mask, 7 ... First electrode layer, 9 ... Upper shield layer, 10
... Recording gap layer, 12, 14 thin film coil, 16 upper magnetic pole layer, 17 overcoat layer, 18 second electrode layer, 21 first upper shield gap film, 22 etching mask layer, 23 ... Second upper shield gap film.

Claims (11)

[Claims] 1. A magneto-resistive element, two shield layers arranged to face each other with the magneto-resistive element interposed therebetween and shielding the magneto-resistive element, and between the magneto-resistive element and each shield layer. And an electrode layer connected to the magnetoresistive element, disposed between one surface and one shield layer of the magnetoresistive element, and facing a recording medium of the magnetoresistive element. A thin film magnetic head comprising: a position reference layer used as a reference for determining a position of an end opposite to the side. 2. The method according to claim 1, wherein the position reference layer is used as an etching mask for determining a position of an end of the magnetoresistive element opposite to a side facing the recording medium by etching. Item 7. The thin film magnetic head according to Item 1. 3. An insulating layer disposed between the magnetoresistive element and the one shield layer is disposed between one surface of the magnetoresistive element and one surface of the position reference layer. 3. The thin film magnetic head according to claim 1, further comprising a first portion, and a second portion disposed between the other surface of the position reference layer and the one shield layer. 4. The thin film magnetic head according to claim 3, wherein said position reference layer is formed of a magnetic material. 5. A magnetic recording medium comprising: two magnetic layers, each of which is magnetically coupled and includes a magnetic pole part whose part facing the recording medium is opposed to each other via a recording gap layer, and each of which comprises at least one layer; 5. The thin-film magnetic head according to claim 1, further comprising a writing inductive magnetic transducer having a thin-film coil disposed between the two magnetic layers. 6. The thin-film magnetic head according to claim 5, wherein said one shield layer doubles as one of said two magnetic layers. 7. A magnetoresistive element, first and second shield layers arranged to oppose each other with the magnetoresistive element interposed therebetween, and shielding the magnetoresistive element; A method of manufacturing a thin-film magnetic head comprising: first and second insulating layers provided between first and second shield layers; and an electrode layer connected to the magnetoresistive element, comprising: Forming a first insulating layer on the first shield layer; and forming a magnetoresistive element on the first insulating layer. Forming a magnetoresistive film, and forming a lift-off mask on the magnetoresistive film to determine the approximate shape of the magnetoresistive element by etching and to form an electrode layer by a lift-off method, The riff Etching the magnetoresistive film using an off-mask to form a magnetoresistive element having a roughly determined shape; and forming an electrode layer by a lift-off method using the lift-off mask. An etching mask layer used as a mask for determining the position of the end of the magnetoresistive element on the side opposite to the side facing the recording medium by etching on the magnetoresistive element whose general shape is determined. Forming, etching the magnetoresistive element whose general shape has been determined using the etching mask layer, and determining the position of the end of the magnetoresistive element opposite to the side facing the recording medium. Performing a step of: forming a second insulating layer on the magnetoresistive element and the first insulating layer; and forming a second shield layer on the second insulating layer. A method for manufacturing a thin-film magnetic head, comprising: 8. The step of forming the second insulating layer includes, after the step of forming the electrode layer, forming a first insulating layer of the second insulating layer on the magnetoresistive element whose general shape is determined. After the step of forming a portion and the step of determining the position of the end of the magnetoresistive element, a second layer is formed on the etching mask layer.
Forming a second portion of the insulating layer as described above. 9. The method according to claim 8, wherein the etching mask layer is formed of a magnetic material. 10. A magnetic recording medium comprising: two magnetic layers, each of which is magnetically coupled and includes a magnetic pole portion whose part facing the recording medium faces each other via a recording gap layer, and each of which includes at least one layer; 8. A step of forming an inductive magnetic transducer for writing having a thin-film coil disposed between the two magnetic layers.
10. The method for manufacturing a thin-film magnetic head according to any one of claims 9 to 9. 11. The thin-film magnetic head according to claim 10, wherein the second shield layer also serves as one of the two magnetic layers in the inductive magnetic transducer. Production method.