JP2000292927A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2000292927A5 JP2000292927A5 JP1999103712A JP10371299A JP2000292927A5 JP 2000292927 A5 JP2000292927 A5 JP 2000292927A5 JP 1999103712 A JP1999103712 A JP 1999103712A JP 10371299 A JP10371299 A JP 10371299A JP 2000292927 A5 JP2000292927 A5 JP 2000292927A5
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- binder resin
- average molecular
- molecular weight
- formation method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000007261 regionalization Effects 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 5
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims 8
- 229920005989 resin Polymers 0.000 claims 8
- 239000011230 binding agent Substances 0.000 claims 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 6
- 150000001875 compounds Chemical class 0.000 claims 5
- QYKIQEUNHZKYBP-UHFFFAOYSA-N vinyl ether Chemical group C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 claims 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 238000007259 addition reaction Methods 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000001678 irradiating Effects 0.000 claims 1
- 125000005647 linker group Chemical group 0.000 claims 1
- 239000003513 alkali Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Description
【発明の名称】パタン形成方法 [Title of the Invention] Pattern formation method
【0001】
【発明の属する技術分野】
本発明は半導体装置等の微細加工に用いられるパタン形成方法に係り、特にX線、電子線等の電離放射線のパタン露光によりパタン潜像形成部に酸を生成せしめ、この酸を触媒とする反応によって、照射部と未照射部のアルカリ水溶液に対する溶解性を変化させ、アルカリ水溶液を現像液とする現像工程によりパタンを現出させるパタン形成方法に関する。[0001]
Field of the Invention
The present invention relates to a pattern forming method used for fine processing of a semiconductor device or the like, and in particular, an acid is generated in a pattern latent image forming portion by pattern exposure of ionizing radiation such as X-ray and electron beam, and this acid is used as a catalyst. by changing the solubility in an alkali aqueous solution of the irradiated portion and the unirradiated portion, about Rupa Tan forming method to appear a pattern by development step of the alkali aqueous solution and the developing solution.
【0006】
本発明の目的は、高感度で高解像度のレジストパタンを形成できるパタン形成方法を提供することにある。[0006]
An object of the present invention is to provide a Rupa Tan forming method capable of forming a resist pattern of high resolution with high sensitivity.
【0052】
【発明の効果】
本発明によれば、紫外線、遠紫外線、電子線、X線、その他の活性放射線に対して高感度で高解像度に優れたレジストパタンを形成できる。 [0052]
【Effect of the invention】
According to the present invention, ultraviolet rays, far ultraviolet rays, electron beams, X-rays, Ru can form a resist pattern with excellent high resolution with high sensitivity to other actinic radiation.
Claims (7)
放射線を用いて前記塗膜に所定のパタン潜像を形成する工程と、
アルカリ水溶液を現像液としてパタンを現出させる現像工程とを有することを特徴とするパタン形成方法。 (A) A resin obtained by acid-catalyzed addition reaction of a binder resin containing a carboxyl group and / or a phenolic hydroxyl group with a compound containing at least two vinyl ether groups in one molecule, and (b) radiation irradiation Applying a resist solution containing a compound capable of generating an acid by
Forming a predetermined pattern latent image on the coating film using radiation;
And a developing step of developing a pattern using an alkaline aqueous solution as a developing solution.
前記レジスト液を基板上に塗布する工程と、その後、Applying the resist solution onto the substrate; and
前記基板に放射線を照射、アルカリ水溶液で現像することにより所望のレジストパタンを得ることを特徴とするパタン形成方法。A pattern formation method characterized in that a desired resist pattern is obtained by irradiating the substrate with radiation and developing it with an alkaline aqueous solution.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10371299A JP3903638B2 (en) | 1999-04-12 | 1999-04-12 | Pattern formation method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10371299A JP3903638B2 (en) | 1999-04-12 | 1999-04-12 | Pattern formation method |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2000292927A JP2000292927A (en) | 2000-10-20 |
JP2000292927A5 true JP2000292927A5 (en) | 2004-10-07 |
JP3903638B2 JP3903638B2 (en) | 2007-04-11 |
Family
ID=14361340
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10371299A Expired - Fee Related JP3903638B2 (en) | 1999-04-12 | 1999-04-12 | Pattern formation method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3903638B2 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4554122B2 (en) * | 2001-08-06 | 2010-09-29 | 東京応化工業株式会社 | Resist composition for chemically amplified positive type liquid crystal device |
US20070172755A1 (en) * | 2003-11-21 | 2007-07-26 | Masanori Nakamura | Positive photoresist and method for producing structure |
JP2005173369A (en) | 2003-12-12 | 2005-06-30 | Tokyo Ohka Kogyo Co Ltd | Method for removing resist pattern |
JP4893270B2 (en) | 2006-11-29 | 2012-03-07 | 住友化学株式会社 | Chemically amplified positive resist composition |
WO2009093419A1 (en) * | 2008-01-21 | 2009-07-30 | Daicel Chemical Industries, Ltd. | Resin for chemically amplified photoresist and method for producing the same |
JP2015052694A (en) * | 2013-09-06 | 2015-03-19 | Jsr株式会社 | Photosensitive resin composition, polymer, resin film and production method of the same, and electronic component |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06230574A (en) * | 1993-02-05 | 1994-08-19 | Fuji Photo Film Co Ltd | Positive type photosensitive composition |
JP3373056B2 (en) * | 1994-08-17 | 2003-02-04 | 富士写真フイルム株式会社 | Positive photosensitive composition |
JP3360267B2 (en) * | 1996-04-24 | 2002-12-24 | 信越化学工業株式会社 | Chemically amplified positive resist material and pattern forming method |
JP3656237B2 (en) * | 1996-07-17 | 2005-06-08 | Jsr株式会社 | Radiation sensitive resin composition |
JP3570477B2 (en) * | 1997-01-24 | 2004-09-29 | 信越化学工業株式会社 | High molecular compound and chemically amplified positive resist material |
JPH10268508A (en) * | 1997-01-27 | 1998-10-09 | Shin Etsu Chem Co Ltd | Partially hydrogenated polymer compound and chemically sensitized positive resist material |
JPH10298236A (en) * | 1997-02-28 | 1998-11-10 | Shin Etsu Chem Co Ltd | Novel polymeric compound, chemically amplified positive resist material and method for forming pattern |
JPH1172928A (en) * | 1997-06-26 | 1999-03-16 | Shin Etsu Chem Co Ltd | Pattern forming method |
JP3818337B2 (en) * | 1997-09-01 | 2006-09-06 | 信越化学工業株式会社 | Chemically amplified positive resist material |
US6284427B1 (en) * | 1997-09-22 | 2001-09-04 | Clariant Finance (Bvi) Limited | Process for preparing resists |
-
1999
- 1999-04-12 JP JP10371299A patent/JP3903638B2/en not_active Expired - Fee Related
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7005227B2 (en) | One component EUV photoresist | |
JP2004004557A5 (en) | ||
US7989155B2 (en) | Lithographic method | |
JP2000292927A5 (en) | ||
JPH03152543A (en) | Negative contrast photoresist developable by base | |
Tsubaki et al. | Novel EUV resist materials design for 14nm half pitch and below | |
EP1295177B1 (en) | Strongly water-soluble photoacid generator resist compositions | |
JP2002311588A (en) | Pattern forming material and pattern forming method | |
JPH1172916A (en) | Micropattern and method for forming the same | |
US7897324B2 (en) | Lithographic method | |
JPH09134015A (en) | Pattern forming material, pattern forming method and production of semiconductor device | |
JPH03253858A (en) | Material and method for forming pattern | |
JPS592041A (en) | Formation of pattern | |
JPH02108053A (en) | Pattern forming material and pattern forming method | |
JPH08234434A (en) | Chemical amplification type negative resist | |
JP2001305736A (en) | Pattern forming material and pattern forming method | |
JPH05341529A (en) | Negative pattern forming material and pattern forming method | |
JP2002311589A (en) | Pattern forming material and pattern forming method | |
JP2003162062A (en) | Pattern formation material and pattern formation method | |
JPH05136026A (en) | Pattern forming method | |
JP2002090999A (en) | Pattern forming material and pattern forming method | |
JPH07146557A (en) | Pattern forming material | |
JP2004151184A (en) | Chemical amplification type radiation sensitive resist composition and pattern forming method using the same | |
JPH04274244A (en) | Negative type resist material | |
JPH05109697A (en) | Formation of resist pattern |