JP2000284722A5 - - Google Patents

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Publication number
JP2000284722A5
JP2000284722A5 JP2000015372A JP2000015372A JP2000284722A5 JP 2000284722 A5 JP2000284722 A5 JP 2000284722A5 JP 2000015372 A JP2000015372 A JP 2000015372A JP 2000015372 A JP2000015372 A JP 2000015372A JP 2000284722 A5 JP2000284722 A5 JP 2000284722A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2000015372A
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Japanese (ja)
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JP2000284722A (en
JP4514871B2 (en
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Publication date
Application filed filed Critical
Priority to JP2000015372A priority Critical patent/JP4514871B2/en
Priority claimed from JP2000015372A external-priority patent/JP4514871B2/en
Publication of JP2000284722A publication Critical patent/JP2000284722A/en
Publication of JP2000284722A5 publication Critical patent/JP2000284722A5/ja
Application granted granted Critical
Publication of JP4514871B2 publication Critical patent/JP4514871B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000015372A 1999-01-29 2000-01-25 Semiconductor device and electronic equipment Expired - Fee Related JP4514871B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000015372A JP4514871B2 (en) 1999-01-29 2000-01-25 Semiconductor device and electronic equipment

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-22298 1999-01-29
JP2229899 1999-01-29
JP2000015372A JP4514871B2 (en) 1999-01-29 2000-01-25 Semiconductor device and electronic equipment

Publications (3)

Publication Number Publication Date
JP2000284722A JP2000284722A (en) 2000-10-13
JP2000284722A5 true JP2000284722A5 (en) 2007-03-15
JP4514871B2 JP4514871B2 (en) 2010-07-28

Family

ID=26359490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000015372A Expired - Fee Related JP4514871B2 (en) 1999-01-29 2000-01-25 Semiconductor device and electronic equipment

Country Status (1)

Country Link
JP (1) JP4514871B2 (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002035507A1 (en) * 2000-10-27 2002-05-02 Matsushita Electric Industrial Co., Ltd. Display
US6825496B2 (en) 2001-01-17 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP4137454B2 (en) * 2001-01-17 2008-08-20 株式会社半導体エネルギー研究所 Light emitting device, electronic device, and method for manufacturing light emitting device
US7483001B2 (en) 2001-11-21 2009-01-27 Seiko Epson Corporation Active matrix substrate, electro-optical device, and electronic device
KR100892945B1 (en) 2002-02-22 2009-04-09 삼성전자주식회사 Active matrix type organic light emitting display device and method of manufacturing the same
TWI272556B (en) 2002-05-13 2007-02-01 Semiconductor Energy Lab Display device
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
JP4493933B2 (en) * 2002-05-17 2010-06-30 株式会社半導体エネルギー研究所 Display device
CN100449779C (en) 2002-10-07 2009-01-07 株式会社半导体能源研究所 Semiconductor device and mfg. method thereof
JP4175877B2 (en) * 2002-11-29 2008-11-05 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
US7902747B2 (en) * 2003-10-21 2011-03-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having a thin insulating film made of nitrogen and silicon and an electrode made of conductive transparent oxide and silicon dioxide
JP4063266B2 (en) * 2004-09-30 2008-03-19 セイコーエプソン株式会社 Thin film semiconductor device manufacturing method, thin film semiconductor device, electro-optical device, and electronic apparatus
KR20060044032A (en) 2004-11-11 2006-05-16 삼성전자주식회사 Test system for display panel and method of testing thereof
US7554619B2 (en) * 2005-12-05 2009-06-30 Tpo Displays Corp. Stacked storage capacitor structure for a LTPS TFT-LCD
WO2009057444A1 (en) * 2007-11-02 2009-05-07 Sharp Kabushiki Kaisha Circuit board and display device
US8570455B2 (en) 2008-04-02 2013-10-29 Nlt Technologies, Ltd. Semiconductor device, semiconductor device manufacturing method, liquid crystal display device and electronic apparatus
JP5423548B2 (en) 2010-04-05 2014-02-19 セイコーエプソン株式会社 Electro-optical device and electronic apparatus
US8766361B2 (en) * 2010-12-16 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP5909919B2 (en) 2011-08-17 2016-04-27 セイコーエプソン株式会社 Electro-optical device and electronic apparatus
US9818765B2 (en) 2013-08-26 2017-11-14 Apple Inc. Displays with silicon and semiconducting oxide thin-film transistors
US9543370B2 (en) * 2014-09-24 2017-01-10 Apple Inc. Silicon and semiconducting oxide thin-film transistor displays
US9818344B2 (en) 2015-12-04 2017-11-14 Apple Inc. Display with light-emitting diodes
CN113314574A (en) * 2016-09-07 2021-08-27 索尼半导体解决方案公司 Display device
EP3432297B1 (en) 2016-09-09 2023-05-03 Sony Semiconductor Solutions Corporation Display device and electronic device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2536766B2 (en) * 1987-08-11 1996-09-18 旭硝子株式会社 Active matrix display device
JPH0244317A (en) * 1988-08-05 1990-02-14 Hitachi Ltd Liquid crystal display device with auxiliary capacity
JPH04333828A (en) * 1991-05-09 1992-11-20 Sony Corp Liquid crystal display device
JP3106566B2 (en) * 1991-07-26 2000-11-06 ソニー株式会社 Liquid crystal display device and manufacturing method
JP3043870B2 (en) * 1991-11-21 2000-05-22 株式会社東芝 Liquid crystal display
JP3098345B2 (en) * 1992-12-28 2000-10-16 富士通株式会社 Thin film transistor matrix device and method of manufacturing the same
JP3312083B2 (en) * 1994-06-13 2002-08-05 株式会社半導体エネルギー研究所 Display device
JP2797972B2 (en) * 1994-06-28 1998-09-17 日本電気株式会社 Active matrix type liquid crystal display

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