JP2000284302A - Electrode substrate for reflective liquid crystal display device and method of manufacturing the same - Google Patents
Electrode substrate for reflective liquid crystal display device and method of manufacturing the sameInfo
- Publication number
- JP2000284302A JP2000284302A JP11095116A JP9511699A JP2000284302A JP 2000284302 A JP2000284302 A JP 2000284302A JP 11095116 A JP11095116 A JP 11095116A JP 9511699 A JP9511699 A JP 9511699A JP 2000284302 A JP2000284302 A JP 2000284302A
- Authority
- JP
- Japan
- Prior art keywords
- compressive stress
- inorganic thin
- thermosetting resin
- thin film
- liquid crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Liquid Crystal (AREA)
Abstract
(57)【要約】
【課題】光散乱層１５を設けた反射型液晶表示装置用電
極基板において、生産性の優れた反射型液晶表示装置用
電極基板、及びその製造方法を提供すること。
【解決手段】基板１１上に形成された熱硬化性樹脂膜及
び圧縮応力を有する無機薄膜を加熱・冷却し、両膜５
２、５３を不規則な微小な凹凸形状とした凹凸形状上に
光反射性電極５４を形成した光散乱層１５を具備するこ
と。
(57) Abstract: Provided is an electrode substrate for a reflective liquid crystal display device provided with a light scattering layer 15 and having excellent productivity, and a method for manufacturing the same. A thermosetting resin film and an inorganic thin film having a compressive stress formed on a substrate are heated and cooled to form a film.
The light scattering layer 15 in which the light-reflective electrode 54 is formed on an irregular shape in which the irregularities 2 and 53 are irregular minute irregularities.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、反射型液晶表示装
置用電極基板に関するもので、特に、ＰＤＡ、個人携帯
情報機器向けの、光散乱層を設け視野角を拡大した反射
型液晶表示装置用電極基板及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrode substrate for a reflection type liquid crystal display device, and more particularly to a reflection type liquid crystal display device provided with a light scattering layer and having a wide viewing angle, for a PDA and a personal digital assistant. The present invention relates to an electrode substrate and a manufacturing method thereof.
【０００２】[0002]
【従来の技術】液晶表示装置は、一般に、透明電極を備
える二枚の電極板の間に液晶を挟持させて構成されるも
ので、この透明電極間に電圧を印加して液晶を駆動させ
て、この液晶を透過する光の偏光面を制御し、その透過
または不透過を偏光膜によって制御して画面表示するも
のである。そして、このような液晶表示装置の表示に充
分な明るさを得るための照明光として、液晶表示装置の
背面ないし側面に光源（ランプ）を配置したバックライ
ト型やライトガイド型のランプを内蔵した透過型液晶表
示装置が広く利用されている。2. Description of the Related Art A liquid crystal display device is generally constructed by sandwiching a liquid crystal between two electrode plates having a transparent electrode. A voltage is applied between the transparent electrodes to drive the liquid crystal. It controls the polarization plane of the light transmitted through the liquid crystal, and controls transmission or non-transmission of the light by a polarizing film to display a screen. As illumination light for obtaining sufficient brightness for display of such a liquid crystal display device, a backlight type or light guide type lamp in which a light source (lamp) is disposed on the back or side of the liquid crystal display device is incorporated. Transmission type liquid crystal display devices are widely used.
【０００３】この透過型液晶表示装置は、ランプによる
電力の消費が大きく、低消費電力でしかも携帯が可能で
あるという液晶表示装置本来の特徴を損なっている。ま
た、ランプの経時的な劣化により、表示品位が著しく損
なわれ、しかもランプの交換等が容易でない構造となっ
ている。一方、反射型液晶表示装置は、液晶表示装置の
照明光として、室内光や外光を使用するもので、ランプ
を内蔵しておらず、低消費電力の表示装置となってお
り、軽量で携帯用としても便利なものである。The transmission type liquid crystal display device consumes a large amount of electric power by a lamp, and consumes low power and is portable, thereby deteriorating the inherent characteristics of the liquid crystal display device. Further, the display quality is significantly impaired due to the deterioration of the lamp over time, and the lamp is not easily replaced. On the other hand, a reflection type liquid crystal display device uses indoor light or external light as illumination light for the liquid crystal display device, has no built-in lamp, is a low power consumption display device, and is lightweight and portable. It is also convenient for use.
【０００４】このような反射型液晶表示装置の背面に適
用される電極基板としては、例えば、図４に示すよう
に、基板（４１）上にＴＦＴ素子（４２）を形成し、そ
の上に光散乱の為の凹凸形状（４４）を、例えば、感光
性樹脂（４３）を用いてフォトリソグラフィー法にて形
成し、更に、各画素に対応する反射電極（４５）を積層
し、下方のＴＦＴ素子（４２）と反射電極（４５）をビ
アホール（４６）で結び反射電極（４５）と観察者側基
板の透明電極（図示せず）間で液晶駆動をおこなうもの
が知られている。As an electrode substrate applied to the back of such a reflection type liquid crystal display device, for example, as shown in FIG. 4, a TFT element (42) is formed on a substrate (41), and an optical element is formed thereon. An uneven shape (44) for scattering is formed, for example, by a photolithography method using a photosensitive resin (43), and further, a reflection electrode (45) corresponding to each pixel is laminated, and a lower TFT element is formed. It is known that the liquid crystal is driven between the reflective electrode (45) and the transparent electrode (not shown) of the observer side substrate by connecting the reflective electrode (42) and the reflective electrode (45) with a via hole (46).
【０００５】しかし、このような反射型液晶表示装置用
電極基板の製造においては、光散乱の為の凹凸形状を感
光性樹脂を用いてフォトリソグラフィー法にて形成する
ので、その工程が長く生産性が悪いといった問題があ
る。However, in the production of such an electrode substrate for a reflection type liquid crystal display device, since the uneven shape for scattering light is formed by a photolithography method using a photosensitive resin, the process is long and the productivity is long. Is bad.
【０００６】[0006]
【発明が解決しようとする課題】本発明は、以上の様な
問題点に着目してなされたもので、その課題とするとこ
ろは、光散乱層を設け視野角を拡大した反射型液晶表示
装置用電極基板において、生産性の優れた反射型液晶表
示装置用電極基板、及びその製造方法を提供することで
ある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a reflection type liquid crystal display device having a light scattering layer and a wide viewing angle. An object of the present invention is to provide an electrode substrate for a reflection type liquid crystal display device having excellent productivity, and a method of manufacturing the same.
【０００７】[0007]
【課題を解決するための手段】本発明は、光散乱層が設
けられた反射型液晶表示装置用電極基板において、基板
上に順次形成された熱硬化性樹脂膜及び圧縮応力を有す
る無機薄膜を加熱・冷却し、加熱による該熱硬化性樹脂
膜の硬化に伴う熱硬化性樹脂膜の収縮、及び冷却による
該熱硬化性樹脂膜及び該圧縮応力を有する無機薄膜の収
縮と該圧縮応力を有する無機薄膜の圧縮応力とによっ
て、該熱硬化性樹脂膜の表面及び該圧縮応力を有する無
機薄膜を不規則な微小な凹凸形状とした凹凸形状上に光
反射性電極を形成した光散乱層を具備することを特徴と
する反射型液晶表示装置用電極基板である。According to the present invention, there is provided an electrode substrate for a reflection type liquid crystal display device provided with a light scattering layer, comprising a thermosetting resin film and an inorganic thin film having a compressive stress formed sequentially on the substrate. Heating and cooling, shrinking the thermosetting resin film due to curing of the thermosetting resin film by heating, and shrinking the thermosetting resin film and the inorganic thin film having the compressive stress and cooling by the cooling. A light-scattering layer in which a light-reflective electrode is formed on the surface of the thermosetting resin film and the irregular shape with irregular fine irregularities formed by the compressive stress of the inorganic thin film. The present invention provides an electrode substrate for a reflective liquid crystal display device.
【０００８】また、本発明は、上記発明による反射型液
晶表示装置用電極基板において、前記圧縮応力を有する
無機薄膜の材料が、Ｓｉ、Ａｌ、Ｍｇ、Ｔｉ、Ｔａ、Ｚ
ｒ、Ｃｒ等の金属酸化物、金属窒化物、金属フツ化物、
或いは、これらを組み合わせた複合化合物であることを
特徴とする反射型液晶表示装置用電極基板である。Further, the present invention provides the electrode substrate for a reflective liquid crystal display device according to the present invention, wherein the material of the inorganic thin film having a compressive stress is Si, Al, Mg, Ti, Ta, Z
metal oxides such as r and Cr, metal nitrides, metal fluorides,
Alternatively, the present invention is an electrode substrate for a reflective liquid crystal display device, which is a composite compound obtained by combining these.
【０００９】また、本発明は、上記発明による反射型液
晶表示装置用電極基板において、前記光反射性電極の材
料が、Ａｌ、Ａｇ、Ｃｕ、Ａｕ、Ｍｏ、Ｎｉ、Ｔａ、Ｃ
ｒ等の金属、或いは、これらを組み合わせた合金である
ことを特徴とする反射型液晶表示装置用電極基板であ
る。The present invention also provides the electrode substrate for a reflective liquid crystal display according to the present invention, wherein the material of the light-reflective electrode is Al, Ag, Cu, Au, Mo, Ni, Ta, C
An electrode substrate for a reflection type liquid crystal display device, which is a metal such as r or an alloy obtained by combining these metals.
【００１０】また、本発明は、光散乱層が設けられた反
射型液晶表示装置用電極基板の製造方法において、 １）基板上に熱硬化性樹脂膜を形成し、 ２）該熱硬化性樹脂膜上に圧縮応力を有する無機薄膜を
形成し、 ３）加熱により、該熱硬化性樹脂膜を硬化させ、硬化に
伴う熱硬化性樹脂膜の収縮と該圧縮応力を有する無機薄
膜の圧縮応力とによって、該熱硬化性樹脂膜の表面及び
該圧縮応力を有する無機薄膜を不規則な微小な凹凸形状
とし、 ４）冷却により、該熱硬化性樹脂膜及び該圧縮応力を有
する無機薄膜を収縮させ、これらの収縮と該圧縮応力を
有する無機薄膜の圧縮応力とによって、該熱硬化性樹脂
膜の表面及び該圧縮応力を有する無機薄膜を引き続き不
規則な微小な凹凸形状とし、 ５）該凹凸形状上に光反射性電極を形成し、基板上に光
散乱層を設けることを特徴とする反射型液晶表示装置用
電極基板の製造方法である。The present invention also relates to a method for manufacturing an electrode substrate for a reflection type liquid crystal display device provided with a light scattering layer, comprising: 1) forming a thermosetting resin film on the substrate; Forming an inorganic thin film having a compressive stress on the film; 3) curing the thermosetting resin film by heating; shrinking the thermosetting resin film upon curing and compressive stress of the inorganic thin film having the compressive stress; Thus, the surface of the thermosetting resin film and the inorganic thin film having the compressive stress are formed into irregular fine irregularities. 4) By cooling, the thermosetting resin film and the inorganic thin film having the compressive stress are shrunk. Due to these shrinkage and the compressive stress of the inorganic thin film having the compressive stress, the surface of the thermosetting resin film and the inorganic thin film having the compressive stress continue to have irregular fine irregularities, 5) the irregularities Form a light reflective electrode on top, It is a manufacturing method of a reflection type liquid crystal display device electrode substrate and providing a light scattering layer on the plate.
【００１１】また、本発明は、上記発明による反射型液
晶表示装置用電極基板の製造方法において、前記圧縮応
力を有する無機薄膜及び前記光反射性電極を形成する方
法として、物理的成膜法を用いたことを特徴とする反射
型液晶表示装置用電極基板の製造方法である。The present invention also provides a method for manufacturing an electrode substrate for a reflective liquid crystal display device according to the present invention, wherein a physical film forming method is used as a method for forming the inorganic thin film having the compressive stress and the light reflective electrode. A method for manufacturing an electrode substrate for a reflection type liquid crystal display device, characterized by using:
【００１２】[0012]
【発明の実施の形態】以下、本発明の実施の形態を説明
する。図１は、本発明による反射型液晶表示装置用電極
基板の一実施例を示す断面図である。図１に示すよう
に、反射型液晶表示装置用電極基板は、その表面が不規
則な微小な凹凸形状をした熱硬化性樹脂膜（５２）、不
規則な微小な凹凸形状をした圧縮応力を有する無機薄膜
（５３）、不規則な微小な凹凸形状をした光反射性電極
（５４）で構成される光散乱層（１５）が基板（１１）
上に設けられたものである。Embodiments of the present invention will be described below. FIG. 1 is a sectional view showing an embodiment of an electrode substrate for a reflection type liquid crystal display device according to the present invention. As shown in FIG. 1, an electrode substrate for a reflective liquid crystal display device has a thermosetting resin film (52) whose surface has irregular fine irregularities, and a compressive stress having irregular irregular irregularities. A light-scattering layer (15) composed of an inorganic thin film (53) having a light-reflective electrode (54) having irregular fine irregularities formed on a substrate (11);
It is provided above.
【００１３】図２（イ）〜（ニ）は、本発明による反射
型液晶表示装置用電極基板の製造方法の一実施例をその
断面で示す説明図である。図２（イ）に示すように、基
板（１１）上に熱硬化性樹脂膜（１２）を形成し、図２
（ロ）に示すように、この熱硬化性樹脂膜上に圧縮応力
を有する無機薄膜（１３）を形成する。FIGS. 2A to 2D are cross-sectional views showing one embodiment of a method for manufacturing an electrode substrate for a reflection type liquid crystal display device according to the present invention. As shown in FIG. 2A, a thermosetting resin film (12) is formed on a substrate (11).
As shown in (b), an inorganic thin film (13) having a compressive stress is formed on the thermosetting resin film.
【００１４】次に、この熱硬化性樹脂膜及び圧縮応力を
有する無機薄膜を加熱し、熱硬化性樹脂膜を硬化させ
る。続いて、冷却して常温に戻し、図２（ハ）に示すよ
うに、熱硬化性樹脂膜の表面及び該圧縮応力を有する無
機薄膜を不規則な微小な凹凸形状とする。更に、この凹
凸形状上に光反射性電極（５４）を形成し、図２（ニ）
に示すような、光散乱層（１５）を設けた反射型液晶表
示装置用電極基板を得るものである。Next, the thermosetting resin film and the inorganic thin film having a compressive stress are heated to cure the thermosetting resin film. Subsequently, the temperature is returned to normal temperature by cooling, and as shown in FIG. 2C, the surface of the thermosetting resin film and the inorganic thin film having the compressive stress are formed into irregular fine irregular shapes. Further, a light-reflective electrode (54) is formed on this uneven shape, and FIG.
As described above, an electrode substrate for a reflection type liquid crystal display device provided with a light scattering layer (15) is obtained.
【００１５】本発明においては、光散乱層に、熱硬化性
樹脂膜及び圧縮応力を有する無機薄膜を用いたことを特
徴とするものであり、加熱による熱硬化性樹脂膜の硬化
過程においては、硬化に伴う熱硬化性樹脂膜の収縮と圧
縮応力を有する無機薄膜の圧縮応力とによって、熱硬化
性樹脂膜の表面及び圧縮応力を有する無機薄膜を不規則
な微小な凹凸形状とし、引き続く、冷却過程において
は、熱硬化性樹脂膜及び圧縮応力を有する無機薄膜を収
縮させ、これらの収縮と圧縮応力を有する無機薄膜の圧
縮応力とによって、熱硬化性樹脂膜の表面及び圧縮応力
を有する無機薄膜を引き続き不規則な微小な凹凸形状と
するものである。The present invention is characterized in that a thermosetting resin film and an inorganic thin film having a compressive stress are used for the light scattering layer. In the process of curing the thermosetting resin film by heating, Due to the shrinkage of the thermosetting resin film due to curing and the compressive stress of the inorganic thin film having a compressive stress, the surface of the thermosetting resin film and the inorganic thin film having a compressive stress are formed into irregular fine irregularities, followed by cooling. In the process, the thermosetting resin film and the inorganic thin film having a compressive stress are shrunk, and the shrinkage and the compressive stress of the inorganic thin film having the compressive stress cause the surface of the thermosetting resin film and the inorganic thin film having the compressive stress to contract. In the shape of irregular irregular fine irregularities.
【００１６】この凹凸形状の表面粗さは、熱硬化性樹脂
膜の膜厚や物性、及び無機薄膜の持つ圧縮応力値などで
変化するが、数百ｎｍ〜数μｍの範囲の高低差が得ら
れ、その分布は正規分布に近く、従って光散乱特性は優
れたものとなる。The surface roughness of the uneven shape varies depending on the thickness and physical properties of the thermosetting resin film, the compressive stress value of the inorganic thin film, and the like, but a height difference in the range of several hundred nm to several μm is obtained. And its distribution is close to a normal distribution, so that the light scattering characteristics are excellent.
【００１７】本発明における基板としては、ガラス、プ
ラスチックフィルム、プラスチックボード、シリコン、
或いは、これらの基板にＴＦＴ素子などを形成したもの
が利用できる。また、本発明における熱硬化性樹脂膜に
は、熱硬化性樹脂であれば限定されるものではない。例
えば、メラミン樹脂、尿素樹脂、フェノール樹脂、アク
リルエポキシ樹脂、フローレン系アクリル樹脂、ポリイ
ミド樹脂などが適用できる。As the substrate in the present invention, glass, plastic film, plastic board, silicon,
Alternatively, a substrate in which a TFT element or the like is formed on these substrates can be used. The thermosetting resin film in the present invention is not limited as long as it is a thermosetting resin. For example, a melamine resin, a urea resin, a phenol resin, an acrylic epoxy resin, a fluorene-based acrylic resin, a polyimide resin, or the like can be used.
【００１８】本発明における無機薄膜は、圧縮応力を有
する無機薄膜であることが必要であり、例えば、引っ張
り応力を有する無機薄膜を用いた際には、無機薄膜は割
れてしまい線状のクラックとなり、不規則な微小な凹凸
形状は得られない。また、圧縮応力或いは引っ張り応力
が殆どない無機薄膜を用いた際には、不規則な微小な凹
凸形状は得られない。The inorganic thin film in the present invention is required to be an inorganic thin film having a compressive stress. For example, when an inorganic thin film having a tensile stress is used, the inorganic thin film is broken and becomes a linear crack. In addition, no irregular fine irregular shape can be obtained. Further, when an inorganic thin film having almost no compressive stress or tensile stress is used, irregular fine irregularities cannot be obtained.
【００１９】圧縮応力を有する無機薄膜を形成する方法
としては、成膜方法や成膜条件によって内部応力の制御
が容易な物理的成膜法が好ましいものである。物理的成
膜法としては、例えば、ＥＢ蒸着法、スパッタ法、イオ
ンプレーティング法、マグネトロンスパッタ法などがあ
げられる。また、例えば、珪素をスパッタ法にて成膜
し、酸素プラズマを照射することで酸化珪素を得るなど
の成膜法を用いることもできる。応力の制御が容易な成
膜法を適宜に選択すれば良い。As a method for forming an inorganic thin film having a compressive stress, a physical film forming method in which internal stress can be easily controlled by a film forming method and film forming conditions is preferable. Examples of the physical film forming method include an EB vapor deposition method, a sputtering method, an ion plating method, and a magnetron sputtering method. Alternatively, for example, a film formation method in which silicon is formed by a sputtering method and silicon oxide is obtained by irradiation with oxygen plasma can be used. What is necessary is just to select suitably the film-forming method which can control stress easily.
【００２０】無機薄膜の材料としては、Ｓｉ、Ａｌ、Ｍ
ｇ、Ｔｉ、Ｔａ、Ｚｒ、Ｃｒ等の金属酸化物、金属窒化
物、金属フツ化物、或いは、これらを組み合わせた複合
化合物であることが好ましいものである。これは、例え
ば、スパッタ法などのように、金属材料を用いて、酸素
や窒素などのガス雰囲気中で無機薄膜を得る場合に、そ
の材料単体としては引っ張り応力を示すものでも、成膜
方法や成膜条件を工夫して圧縮応力を有する無機薄膜に
することが容易なためである。As the material of the inorganic thin film, Si, Al, M
It is preferably a metal oxide such as g, Ti, Ta, Zr, or Cr, a metal nitride, a metal fluoride, or a composite compound obtained by combining these. This is, for example, when an inorganic thin film is obtained in a gas atmosphere such as oxygen or nitrogen using a metal material such as a sputtering method, even if the material itself shows a tensile stress, the film forming method or This is because an inorganic thin film having a compressive stress can be easily formed by devising film forming conditions.
【００２１】また、光反射性電極の材料としては、光反
射性及び導電性に優れていることから、Ａｌ、Ａｇ、Ｃ
ｕ、Ａｕ、Ｍｏ、Ｎｉ、Ｔａ、Ｃｒなどの金属、或い
は、これらを組み合わせた合金であることが好ましいも
のである。なお、本発明による反射型液晶表示装置用電
極基板は、例えば、各画素部に相当する上記光反射性電
極上にカラーフィルタを形成することにより、容易に液
晶表示装置のカラー表示が可能となるものである。As a material of the light-reflective electrode, Al, Ag, C
It is preferable to use a metal such as u, Au, Mo, Ni, Ta, or Cr, or an alloy obtained by combining these metals. The reflection type liquid crystal display device electrode substrate according to the present invention can easily perform color display of the liquid crystal display device by forming a color filter on the light reflective electrode corresponding to each pixel portion, for example. Things.
【００２２】[0022]
【実施例】次に、本発明の実施例により、本発明を具体
的に説明する。 ＜実施例１＞基板として、厚さ０．７ｍｍのガラス板を
用いた。まず、熱硬化性樹脂として日本化薬（株）製の
エポキシ系樹脂「ＨＯＣ−５Ｇ」を用い、約１０００
ｒ．ｐ．ｍ．にて塗布した後、ホットプレートを使って
１００℃、３分間の熱処理を施し乾燥させた。この時の
熱硬化性樹脂膜の厚みは約１．５μｍであった。次い
で、アネルバ（株）製ＤＣスパッタにて無機薄膜として
ＳｉＯ2 を成膜した。ＳｉＯ2 は成膜条件や膜厚の依存
性が小さなものであり、約３００ＭＰａの圧縮応力を示
した。成膜条件は下記の通りである。 ＲＦ出力：２．５（ｋＷ）、ガス流量：ＡｒｌＯＯ（Ｓ
ＣＣＭ）、Ｏ2 ５（ＳＣＣＭ）、成膜真空度：約２（ｍ
Ｔｏｒｒ）、成膜温度：８０℃以下、膜厚：約３０００
Å。Next, the present invention will be described in detail with reference to examples of the present invention. <Example 1> A glass plate having a thickness of 0.7 mm was used as a substrate. First, an epoxy resin “HOC-5G” manufactured by Nippon Kayaku Co., Ltd.
r. p. m. , And heat-treated at 100 ° C. for 3 minutes using a hot plate and dried. At this time, the thickness of the thermosetting resin film was about 1.5 μm. Next, SiO 2 was formed as an inorganic thin film by DC sputtering manufactured by Anelva Corporation. SiO 2 has a small dependency on film forming conditions and film thickness, and has a compressive stress of about 300 MPa. The film forming conditions are as follows. RF output: 2.5 (kW), gas flow rate: AllOO (S
CCM), O 2 5 (SCCM), film formation vacuum degree: about 2 (m
Torr), film forming temperature: 80 ° C. or less, film thickness: about 3000
Å.
【００２３】続いて、ホットプレートにて２００℃、３
分間の熱処理を行い樹脂を完全硬化させ、冷却させた。
更に、アネルバ（株）製ＲＦスパッタにて光反射性電極
としてアルミを約２０００Åの厚さに成膜して、図２
（ニ）に示すような、光散乱層が形成された反射型液晶
表示装置用電極基板を得た。得られた光散乱層の凹凸形
状は、不規則な形状であり約０．３〜１．０μｍの高低
差さをもち、ピッチは約５〜３０μｍのものであった。
図５は、その平面状態を示したものであり、黒部（Ａ）
は凸部を、白部（Ｂ）は凹部を表している。Subsequently, at 200.degree.
The resin was completely cured by a heat treatment for 5 minutes and cooled.
Further, aluminum was formed to a thickness of about 2000 mm as a light reflective electrode by RF sputtering from Anelva Co., Ltd.
As shown in (d), an electrode substrate for a reflective liquid crystal display device on which a light scattering layer was formed was obtained. The uneven shape of the obtained light scattering layer was irregular, having a height difference of about 0.3 to 1.0 μm, and a pitch of about 5 to 30 μm.
FIG. 5 shows the planar state, and the black portion (A)
Represents a convex portion, and white portion (B) represents a concave portion.
【００２４】＜実施例２＞図３に示すように、基板（２
１）として、厚さ０．７ｍｍのガラス板を用いた。先
ず、ＴＦＴ素子（２２）を形成し、樹脂（２３）として
ＪＳＲ（株）製のポジ型レジスト「ＭＦＲ３５４」を用
い、塗布膜を形成した後、オーブンにて１００℃、３０
分間の熱処理を施し乾燥させた。膜厚は約１．５μｍで
あった。次いで、露光及び現像を施し、ＴＦＴ素子と反
射電極の電気的結合を図るビアホール（２６）を形成し
た。<Embodiment 2> As shown in FIG.
As 1), a glass plate having a thickness of 0.7 mm was used. First, a TFT element (22) is formed, a coating film is formed using a positive resist “MFR354” manufactured by JSR Corporation as a resin (23), and then a coating film is formed in an oven at 100 ° C. and 30 ° C.
The heat treatment was performed for a minute, followed by drying. The thickness was about 1.5 μm. Next, exposure and development were performed to form a via hole (26) for electrical coupling between the TFT element and the reflection electrode.
【００２５】次いで、アネルバ（株）製ＤＣスパッタに
てＩＴＯを無機薄膜（２４）として成膜した。ＩＴＯは
成膜条件によって応力値が変化するが、例えば、下記の
ように成膜時の真空圧を比較的高真空下で形成すると圧
縮応力となる。成膜条件は下記の通りである。 ＤＣ出力：２（ｋＷ）、８（Ａ）、ガス流量：Ａｒ＋
０．１％、Ｏ2 １００（ＳＣＣＭ）、成膜真空度：約２
（ｍＴｏｒｒ）、成膜温度：８０℃以下、膜厚：約２０
００Å。Next, ITO was formed as an inorganic thin film (24) by DC sputtering manufactured by Anelva Co., Ltd. The stress value of ITO changes depending on the film forming conditions. For example, when a vacuum pressure during film formation is formed under a relatively high vacuum as described below, the stress becomes a compressive stress. The film forming conditions are as follows. DC output: 2 (kW), 8 (A), gas flow rate: Ar +
0.1%, O 2 100 (SCCM), film formation vacuum degree: about 2
(MTorr), film formation temperature: 80 ° C. or less, film thickness: about 20
00Å.
【００２６】続いて、ホットプレートにて２００℃、３
分間の熱処理を行い、樹脂を完全硬化させ、冷却させ
た。更に、アネルバ（株）製ＲＦスパッタにて反射電極
としてアルミを約２０００Åの厚さに成膜した。次い
で、アルミ上に東京応化（株）製ポジ型レジスト「ＡＺ
１３５０」を塗布した後、電極形状に露光、現像を行っ
た。次いで、混酸（酢酸，硝酸，リン酸の混合液）を使
用し、常温にてアルミをエッチングし反射電極（２５）
を形成した。Subsequently, at 200 ° C. for 3 hours on a hot plate.
The resin was completely cured and cooled by performing a heat treatment for a minute. Further, aluminum was formed to a thickness of about 2000 mm as a reflective electrode by RF sputtering manufactured by Anelva Co., Ltd. Next, a positive resist “AZ” manufactured by Tokyo Ohka Co., Ltd. was formed on aluminum.
After applying “1350”, exposure and development were performed on the electrode shape. Then, using a mixed acid (a mixed solution of acetic acid, nitric acid, and phosphoric acid), the aluminum is etched at room temperature to form a reflective electrode (25).
Was formed.
【００２７】次いで、ドライエツチングを用いて、ＩＴ
Ｏをエッチングした後、レジスト残査を除去して、図３
に示すような、光散乱層（２７）が形成された反射型液
晶表示装置用電極基板とした。得られた光散乱層の凹凸
形状は、不規則な形状であり約０．３〜１．０μｍの高
低差さをもち、ピッチは約１〜１０μｍのものであっ
た。図６は、その平面状態を示したものであり、黒部は
凸部を、白部は凹部を表している。Then, using dry etching, the IT
After etching O, the resist residue is removed, and FIG.
As shown in the figure, an electrode substrate for a reflection type liquid crystal display device having a light scattering layer (27) was formed. The uneven shape of the obtained light scattering layer was irregular, having a height difference of about 0.3 to 1.0 μm, and a pitch of about 1 to 10 μm. FIG. 6 shows the planar state, in which black portions represent convex portions and white portions represent concave portions.
【００２８】[0028]
【発明の効果】本発明は、光散乱層が設けられた反射型
液晶表示装置用電極基板において、基板上に順次形成さ
れた熱硬化性樹脂膜及び圧縮応力を有する無機薄膜を加
熱・冷却し、熱硬化性樹脂膜の表面及び圧縮応力を有す
る無機薄膜を不規則な微小な凹凸形状とした凹凸形状上
に光反射性電極を形成した光散乱層を具備するので、光
散乱の為の凹凸形状の形成を感光性樹脂を用いたフォト
リソグラフィー法に依ることがなく、従って、生産性の
優れた反射型液晶表示装置用電極基板となる。According to the present invention, in an electrode substrate for a reflection type liquid crystal display device provided with a light scattering layer, a thermosetting resin film and an inorganic thin film having a compressive stress sequentially formed on the substrate are heated and cooled. Since it has a light-scattering layer in which a light-reflective electrode is formed on a surface of a thermosetting resin film and an irregular shape in which an inorganic thin film having a compressive stress has irregular fine irregularities, unevenness for light scattering is provided. The formation of the shape does not depend on the photolithography method using a photosensitive resin, and therefore, an electrode substrate for a reflective liquid crystal display device having excellent productivity can be obtained.
【００２９】また、本発明は、光散乱層が設けられた反
射型液晶表示装置用電極基板の製造において、１）基板
上に熱硬化性樹脂膜を形成し、２）熱硬化性樹脂膜上に
圧縮応力を有する無機薄膜を形成し、３）加熱により、
熱硬化性樹脂膜の表面及び圧縮応力を有する無機薄膜を
不規則な微小な凹凸形状とし、４）冷却により、熱硬化
性樹脂膜の表面及び圧縮応力を有する無機薄膜を引き続
き不規則な微小な凹凸形状とし、５）凹凸形状上に光反
射性電極を形成し、基板上に光散乱層を設けるので、光
散乱の為の凹凸形状の形成を感光性樹脂を用いたフォト
リソグラフィー法に依ることがなく、従って、生産性の
優れた反射型液晶表示装置用電極基板の製造方法とな
る。Further, according to the present invention, in the production of an electrode substrate for a reflection type liquid crystal display device provided with a light scattering layer, 1) a thermosetting resin film is formed on a substrate, and 2) a thermosetting resin film is formed on the substrate. To form an inorganic thin film having compressive stress, and 3) by heating,
The surface of the thermosetting resin film and the inorganic thin film having a compressive stress are formed into irregular minute fine irregularities. 4) By cooling, the surface of the thermosetting resin film and the inorganic thin film having the compressive stress are continuously changed into irregular fine shapes. 5) Since a light-reflecting electrode is formed on the uneven shape and a light-scattering layer is provided on the substrate, the unevenness for light scattering must be formed by a photolithography method using a photosensitive resin. Therefore, a method of manufacturing an electrode substrate for a reflection type liquid crystal display device having excellent productivity is provided.
【図１】本発明による反射型液晶表示装置用電極基板の
一実施例を示す断面図である。FIG. 1 is a sectional view showing one embodiment of an electrode substrate for a reflection type liquid crystal display device according to the present invention.
【図２】（イ）〜（ニ）は、本発明による反射型液晶表
示装置用電極基板の製造方法の一実施例をその断面で示
す説明図である。FIGS. 2A to 2D are cross-sectional views illustrating one embodiment of a method for manufacturing an electrode substrate for a reflective liquid crystal display device according to the present invention.
【図３】実施例２により製造した反射型液晶表示装置用
電極基板を示す断面図である。FIG. 3 is a cross-sectional view showing an electrode substrate for a reflective liquid crystal display device manufactured according to Example 2.
【図４】従来法による反射型液晶表示装置用電極基板を
示す断面図である。FIG. 4 is a sectional view showing an electrode substrate for a reflection type liquid crystal display device according to a conventional method.
【図５】実施例１により製造した反射型液晶表示装置用
電極基板の平面状態を示した図である。FIG. 5 is a diagram showing a planar state of an electrode substrate for a reflective liquid crystal display device manufactured according to Example 1.
【図６】実施例２により製造した反射型液晶表示装置用
電極基板の平面状態を示した図である。FIG. 6 is a diagram showing a planar state of an electrode substrate for a reflection type liquid crystal display device manufactured according to Example 2.
１１、２１、４１・・・・・・基板 １２・・・・・・熱硬化性樹脂膜 １３・・・・・・圧縮応力を有する無機薄膜 １５、２７・・・・・・光散乱層 ２２、４２・・・・・・ＴＦＴ素子 ２３・・・・・・樹脂 ２４・・・・・・ＩＴＯの無機薄膜 ２５、４５・・・・・・反射電極 ２６、４６・・・・・・ビアホール ４３・・・・・・感光性樹脂 ４４・・・・・・凹凸形状 ５２・・・・・・表面が凹凸形状をした熱硬化性樹脂膜 ５３・・・・・・凹凸形状をした圧縮応力を有する無機薄膜 ５４・・・・・・光反射性電極 Ａ・・・・・・凸部 Ｂ・・・・・・凹部 11, 21, 41: substrate 12: thermosetting resin film 13: inorganic thin film having compressive stress 15, 27: light scattering layer 22 , 42 ... TFT element 23 ... resin 24 ... ITO inorganic thin film 25, 45 ... reflective electrode 26, 46 ... via hole 43: photosensitive resin 44: uneven shape 52: thermosetting resin film with uneven surface 53: compressive stress with uneven shape Inorganic thin film 54 having light-reflective electrode A Projecting part B Concave part
Claims (5)
用電極基板において、基板上に順次形成された熱硬化性
樹脂膜及び圧縮応力を有する無機薄膜を加熱・冷却し、
加熱による該熱硬化性樹脂膜の硬化に伴う熱硬化性樹脂
膜の収縮、及び冷却による該熱硬化性樹脂膜及び該圧縮
応力を有する無機薄膜の収縮と該圧縮応力を有する無機
薄膜の圧縮応力とによって、該熱硬化性樹脂膜の表面及
び該圧縮応力を有する無機薄膜を不規則な微小な凹凸形
状とした凹凸形状上に光反射性電極を形成した光散乱層
を具備することを特徴とする反射型液晶表示装置用電極
基板。1. An electrode substrate for a reflection type liquid crystal display device provided with a light scattering layer, wherein a thermosetting resin film and an inorganic thin film having a compressive stress sequentially formed on the substrate are heated and cooled,
Shrinkage of the thermosetting resin film due to curing of the thermosetting resin film due to heating, and shrinkage of the thermosetting resin film and the inorganic thin film having the compressive stress due to cooling and compressive stress of the inorganic thin film having the compressive stress And a light-scattering layer in which a light-reflective electrode is formed on a surface of the thermosetting resin film and an irregular shape in which the inorganic thin film having the compressive stress has irregular minute irregularities. Substrate for reflective liquid crystal display devices.
Ｓｉ、Ａｌ、Ｍｇ、Ｔｉ、Ｔａ、Ｚｒ、Ｃｒ等の金属酸
化物、金属窒化物、金属フツ化物、或いは、これらを組
み合わせた複合化合物であることを特徴とする請求項１
記載の反射型液晶表示装置用電極基板。2. The material of the inorganic thin film having a compressive stress,
2. A metal oxide such as Si, Al, Mg, Ti, Ta, Zr, and Cr, a metal nitride, a metal fluoride, or a composite compound of these.
The electrode substrate for a reflective liquid crystal display device according to the above.
Ｃｕ、Ａｕ、Ｍｏ、Ｎｉ、Ｔａ、Ｃｒ等の金属、或い
は、これらを組み合わせた合金であることを特徴とする
請求項１又は請求項２記載の反射型液晶表示装置用電極
基板。3. The material of the light-reflective electrode is Al, Ag,
3. The electrode substrate for a reflective liquid crystal display device according to claim 1, wherein the electrode substrate is a metal such as Cu, Au, Mo, Ni, Ta, or Cr, or an alloy thereof.
用電極基板の製造方法において、 １）基板上に熱硬化性樹脂膜を形成し、 ２）該熱硬化性樹脂膜上に圧縮応力を有する無機薄膜を
形成し、 ３）加熱により、該熱硬化性樹脂膜を硬化させ、硬化に
伴う熱硬化性樹脂膜の収縮と該圧縮応力を有する無機薄
膜の圧縮応力とによって、該熱硬化性樹脂膜の表面及び
該圧縮応力を有する無機薄膜を不規則な微小な凹凸形状
とし、 ４）冷却により、該熱硬化性樹脂膜及び該圧縮応力を有
する無機薄膜を収縮させ、これらの収縮と該圧縮応力を
有する無機薄膜の圧縮応力とによって、該熱硬化性樹脂
膜の表面及び該圧縮応力を有する無機薄膜を引き続き不
規則な微小な凹凸形状とし、 ５）該凹凸形状上に光反射性電極を形成し、基板上に光
散乱層を設けることを特徴とする反射型液晶表示装置用
電極基板の製造方法。4. A method of manufacturing an electrode substrate for a reflection type liquid crystal display device provided with a light scattering layer, comprising: 1) forming a thermosetting resin film on the substrate; and 2) compressing the thermosetting resin film on the thermosetting resin film. Forming an inorganic thin film having a stress; 3) curing the thermosetting resin film by heating; and causing the thermosetting resin film to shrink due to the curing and the compressive stress of the inorganic thin film having the compressive stress. The surface of the curable resin film and the inorganic thin film having the compressive stress are formed into irregular fine irregularities. 4) By cooling, the thermosetting resin film and the inorganic thin film having the compressive stress are shrunk. And the compressive stress of the inorganic thin film having the compressive stress, the surface of the thermosetting resin film and the inorganic thin film having the compressive stress are continuously formed into irregular fine irregularities. 5) Light reflection on the irregularities Forming a conductive electrode and forming a light scattering layer on the substrate Reflective liquid crystal display device electrode substrate manufacturing method characterized by providing.
反射性電極を形成する方法として、物理的成膜法を用い
たことを特徴とする請求項４記載の反射型液晶表示装置
用電極基板の製造方法。5. An electrode substrate for a reflection type liquid crystal display device according to claim 4, wherein a physical film forming method is used as a method of forming said inorganic thin film having compressive stress and said light reflective electrode. Manufacturing method.
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| US6882394B2 (en) | 2002-05-30 | 2005-04-19 | Fujitsu-Display Technologies Corporation | Reflective liquid crystal display including a step of applying charged particles on the organic resin and film method of manufacturing |
| KR100617032B1 (en) | 2003-05-30 | 2006-08-30 | 엘지.필립스 엘시디 주식회사 | LCD and its manufacturing method |
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-
1999
- 1999-04-01 JP JP11095116A patent/JP2000284302A/en not_active Withdrawn
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