JP2000279397A - Unevenness detective sensor, unevenness detective device, fingerprint checking device, and individual discriminant device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make S/N ratio high and make detectable a normal unevenness even if an object is moved by providing a sensitive element array arranging a sensitive element in an array-shaped to a unevenness selective sensor and providing a control circuit, a sensitive electrode and a condenser and so forth to the sensitive element. SOLUTION: One sensitive element 11 is composed of a sensitive electrode 1, an amplifier 2 and a condenser 10 and so forth. The unevenness detective sensor is constituted by arranging the sensitive element 11 in an array whose length is N lines and whose width is M rows as an sensitive element array. A memory function is built in each sensitive element and unevenness information on objects is lumped together then stored in memory temporarily and outputs in order. Thereby, unevenness for objects can be detected accurately even is the object move. And scanning frequency can be decreased by scanning without worrying about moving velocity for objects by dint of providing such memory facility, thereby, burden of a peripheral circuit can be decreased. The amplifier is provided on each sensitive element 11, thereby, S/N ratio can be increased.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sensor for detecting a change in the unevenness of an object such as a fingerprint as a change in a capacitance value and electrically detecting the change.

[0002]

2. Description of the Related Art WO 97/40744 discloses a fingerprint sensor as a device for detecting the uneven shape of an object.
FIG. 17 is a circuit diagram showing a main part of a fingerprint sensor used in this system. This circuit forms an array and forms a fingerprint sensor. In the figure, 12 is a sensing element,
Consists of a sensing electrode 14 that forms a capacitance with a fingerprint placed thereon. In this example, only when there is a fingerprint on the sensor,
A capacitance is generated between the fingerprint and the sensing electrode 14. Before scanning, electric charges are stored in the generated capacitance from the first scanning line 18 through the switching element 16. Then, at the time of scanning, the second switching element 17 operates so that this charge is output to the second scanning line (output line) 20. At this time, the capacitance value differs because the distance from the sensing electrode differs depending on the unevenness of the fingerprint. Therefore,
Since the amount of electric charge stored in the capacitor is different, the amount of electric charge is measured two-dimensionally by scanning the first and second scanning lines to obtain a fingerprint uneven pattern. Since the capacitance formed by the fingerprint and the sensing electrode is small, the amount of charge held is small. For this reason, here, a charge amplifier is provided in front of the output line 20 to amplify the charge, thereby improving the S / N ratio.

[0003]

However, since the capacitance formed by the object and the sensing electrode is small, the amount of charge retained is small, and this configuration has a poor S / N ratio. Further, a circuit for reading a high-performance charge amount is required to read the minute charge amount. The output from the sensing electrode is analog. In addition, since the array is sequentially scanned, there is a problem that, for example, when an object moves during scanning, normal irregularities cannot be detected. Further, the output line is easily affected by noise. Further, there is a possibility that the sensor is destroyed by the influence of static electricity of the human body.

Therefore, an object of the present invention is to detect normal irregularities even when an object moves, with a high S / N ratio.

It is a second object of the present invention to provide a device having a high degree of integration, a device having a high resolution, a device capable of simplifying the manufacturing process, a device having little deterioration, and a device capable of reducing the cost. It is a third object of the present invention to provide a sensor whose sensor is not destroyed by the influence of static electricity. Furthermore,
A fourth object is to provide a reliable and hard-to-break personal identification device.

[0006]

According to a first aspect of the present invention, there is provided an unevenness detecting sensor, comprising: a sensing element array in which sensing elements are arranged in an array of N rows by M columns; and each row of the sensing element array. A first power supply line, a second power supply line, and an output line disposed along the scanning element disposed along each column of the sensing element array, wherein the sensing element has an input terminal and an output terminal. And a control circuit having a control input terminal, a sensing electrode, a first switch, a second switch, and a capacitor, wherein the sensing electrode is connected to one end of the first switch; The other end of the switch is connected to one end of the second switch, one end of the capacitor, and the input terminal of the control circuit. The other end of the second switch is connected to the first power supply line, and the other end of the capacitor is connected to the other end. The end is connected to the second power line and the control circuit The output terminal to the output line, a control input terminal of the control circuit for the scanning lines, connects respectively.

The unevenness detecting sensor according to the second aspect of the present invention is
The control circuit is an amplifier.

The unevenness detecting sensor according to the invention of claim 3 is
The control circuit comprises one MOS transistor.

The unevenness detecting sensor according to the invention of claim 4 is
The gate electrode of the MOS transistor is an input terminal, one of the source electrode and the drain electrode of the MOS transistor is an output terminal, and the other electrode is a control input terminal.

The unevenness detecting sensor according to the invention of claim 5 is
The gate electrode of the MOS transistor is a control input terminal, one of the drain electrode and the source electrode is an input terminal,
The other electrode is used as an output terminal.

The unevenness detecting sensor according to the invention of claim 6 is
One end of a third switch is connected to the sensing electrode, and the other end of the third switch is connected to a second power supply line.

The unevenness detecting sensor according to the invention of claim 7 is
At least one of the first power line, the second power line, and the control line of the first, second, and third switches is shared by adjacent sensing elements.

The unevenness detecting sensor according to the invention of claim 8 is
A signal processing circuit for processing data from a sensing element is formed on the same substrate as the sensing element.

According to a ninth aspect of the present invention, there is provided an unevenness detecting sensor,
The shape of the sensing electrode is square or rectangular, and the pitch between adjacent sensing elements in the sensing element array is within 50 μm.

According to a tenth aspect of the present invention, in the unevenness detecting sensor, when N / M is 1 or more, the array is scanned in the row direction when N / M is 1 or more, and N / M is 1 or less. In this case, the array is scanned in the column direction. The unevenness detecting sensor according to the invention of claim 11 is one in which a dielectric is deposited on the sensing electrode.

According to a twelfth aspect of the present invention, there is provided an unevenness detecting device.
A sensor comprising a sensing element and a signal processing circuit is formed on a dielectric substrate.

According to a thirteenth aspect of the present invention, there is provided an unevenness detecting sensor in which a sensor including a sensing element and a signal processing circuit is formed on the same substrate as an image display device.

According to a fourteenth aspect of the present invention, there is provided a fingerprint collating apparatus comprising:
An unevenness detection sensor according to any one of claims 1 to 13 is used as a sensor for detecting a fingerprint.

The personal identification device according to the invention of claim 15 is
A fingerprint matching device according to claim 14 is provided.

According to a sixteenth aspect of the present invention, there is provided an unevenness detecting device,
A movable conductor connected to a power supply is provided in a portion where an object accesses the unevenness detection sensor.

[0021]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 FIG. 1 is a circuit diagram showing a configuration of a main part of an unevenness detection sensor according to Embodiment 1 of the present invention. Where 100 is the scanning line, 200 is the output line,
300 and 400 are power supply lines or control lines, 1 is a sensing electrode, 2 is an amplifier as a control circuit, 5 is a first switch, 6 is a second switch, 10 is a capacitor, 21 is an input terminal of the amplifier, 22 is an input terminal of the amplifier. The control input terminal 23 of the amplifier is the output terminal of the amplifier.
One sensing element 11 is constituted by the sensing electrode 1, the amplifier 2, the first switch 5, the second switch 6, and the capacitor 10. The sensing elements 11 are arranged in an array of N rows and M columns, and An array is used to form an unevenness detection sensor.

When an object such as a finger approaches the sensing electrode 1,
A gap filled with air or the like is generated between the sensing electrode 1 and the object due to unevenness of the object such as a fingerprint. That is, the sensing electrode 1
A capacitance (sensing capacitance) having a capacitance value depending on the unevenness of the object is generated between the object and the object. Conventionally, the unevenness of the object is obtained two-dimensionally by measuring the capacitance value. However, at this time, since the array is sequentially scanned, if an object moves during scanning, there is a problem that the sensing capacitance changes during that time, so that irregularities of the object cannot be correctly detected.

According to the present invention, a memory function is incorporated in each sensing element, and the unevenness information of the object is collectively temporarily stored in the memory and sequentially output. In FIG. 1, the potential of the power supply line 400 is Vcc = _VH , and the potential of the power supply line 300 is Vee.
= 0 V, the capacitance value of the capacitor 10 is C _S , the sensing capacitance is C _f , and the potential at the connection point 1000 is V ₁₀₀₀ . For simplicity, it is assumed that the surface potential of the object is the ground potential.

First, in the initial state, the switch 6 is conducting (ON) and the switch 5 is non-conducting (OFF). When the switch 6 is on, the capacitor 10
Charge Q0 = C _S · V _H is accumulated in. Next, the switch 6 is turned off. Next, when the switch 5 is turned on, a capacitance transfer of charge occurs between the capacitor 10 and the sensing capacitance. Connection point 10 from this
The potential of 00 is

[0025]

(Equation 1) (1)

## EQU1 ## Equation (1) shows that the potential of the connection point 1000 varies depending on the capacitance value of the sensing capacitance. Next, the switch 5 is turned off. Thus, even if the object moves and the sensing capacitance changes, the potential of the connection point 1000 does not change, and the unevenness information of the object is stored in each element. This unevenness information is input to the input terminal 21 of the amplifier 2 as a control circuit, amplified, and output from the output terminal 23 to the output line 200. At this time, the scanning line 100 to which the control input terminal of the amplifier 2 is connected,
The output line 200 to which the output terminal 23 of the amplifier 2 is connected is scanned at an arbitrary scanning frequency to read array information as two-dimensional information.

In this configuration, since the unevenness information of the object is collectively stored in the capacitors 10 provided in each array, the unevenness of the object can be accurately detected even if the object moves. Further, by providing such a memory function, scanning can be performed without concern for the moving speed of the object, so that the scanning frequency for reading the information of the array can be reduced, and the load on the peripheral circuits can be reduced. Further, here, since an amplifier is provided for each sensing element 11, the S / N ratio is improved.

Embodiment 2 FIG. 2 is a circuit diagram showing a configuration of a main part of an unevenness detection sensor according to Embodiment 2 of the present invention. In this configuration, the amplifier as the control circuit of the first embodiment is configured by only one MOS transistor 3. The gate electrode 31 of the MOS transistor 3 is connected to the connection point 1000 as an input terminal, the source electrode 32 is connected to the scanning line 100 as a control input terminal, and the drain electrode 33 is connected to the output line 200 as an output terminal. Since the output current of the MOS transistor 3 depends on the potential applied to the gate electrode 31, the connection point
By connecting the gate potential of the MOS transistor to 1000, an output current depending on the sensing capacitance can be obtained.

The output terminal 33 of the MOS transistor 3
If a capacitor or the like is connected to the power supply, a charge corresponding to the output current is stored. That is, an output voltage depending on the sensing capacitance is obtained. That is, capacitance-voltage conversion can be performed. By measuring and analyzing these output currents and output voltages in a two-dimensional manner, it is possible to detect two-dimensional irregularities of the object.

Normally, an amplifier requires several elements and has a complicated structure. However, in this configuration, since the signal is amplified by only one transistor, the configuration is simple and the occupied area of the sensing element can be reduced.

Embodiment 3 FIG. 3 is a circuit diagram showing a configuration of a main part of an unevenness detection sensor according to Embodiment 3 of the present invention. In this configuration, instead of the amplifier of the first embodiment, the control circuit is constituted by only one MOS transistor 30, the gate electrode 302 of the MOS transistor 30 is connected to the scanning line 100 as a control input terminal, and the drain electrode 301 is The input terminal is connected to the connection point 1000, and the source electrode 303 is connected to the output line 200 as an output terminal. In this configuration, the MOS transistor 3 as a control circuit functions as a switch. This configuration is an effective means when the S / N ratio can be sufficiently obtained such as when the sensing electrode area is large.

In FIG. 3, for example, the potential of Hn (output line 200) is set to 0 V as an initial condition. The potential of the connection point 1000 takes a value between 0 V and Vcc. Therefore, the terminal connected to Hn becomes a source electrode when the MOS transistor 30 is N-type, but becomes a drain electrode when the MOS transistor 30 is P-type. When the potential of Hn is set to Vcc as an initial condition, Hn
Is connected to the drain electrode when the MOS transistor 30 is N-type, but becomes the source electrode when the MOS transistor 30 is P-type. That is, an appropriate drain electrode and source electrode are connected to Hn according to the potential relationship between Hn and the connection point 1000 and the type of MOS transistor used.

Embodiment 4 FIG. 4, 5, and 6
FIG. 9 is a circuit diagram showing a configuration of a main part of an unevenness detection sensor according to Embodiment 4 of the present invention. FIGS. 4, 5 and 6 show the case where the third switch 4 is connected to the sensing electrode 1 of FIGS. 1, 2 and 3, respectively.

If sufficient time does not elapse after the sensing capacitance is measured in the sensing electrode 1, residual charges may be generated.
Since this residual charge deteriorates the S / N ratio, the third switch 4 is connected to the power supply line 300 serving as the reference potential of the capacitor 10 as shown in FIG.

Embodiment 5 FIG. 7, 8, and 9 show:
FIG. 13 is a circuit diagram showing a configuration of a main part of an object unevenness detection sensor according to Embodiment 5 of the present invention. 7, 8, and 9, the sensing elements 11 of FIGS. 4, 5, and 6 are arranged vertically symmetrically, and the upper and lower sensing elements share the power supply line 300. Providing a switch requires a power supply line and a control line, which increases the array area. Therefore, when two adjacent sensing elements share a wiring as shown in the figure, the number of wirings can be halved compared to the conventional case. Although only an example in which the power supply line is shared is shown in the drawing, a control line (not shown) may be shared. With this configuration, the degree of integration of the sensor can be improved by the reduced area of the wiring, and the S / N ratio can be prevented from lowering due to the parasitic capacitance caused by the wiring.

Embodiment 6 FIG. Incorporating a signal processing circuit that measures data from the sensing element array inside the sensor simplifies the design of peripheral circuits other than the sensor, and improves the S / N ratio by processing the signal inside the chip. Can be.

FIG. 10 shows an example of a block diagram incorporating peripheral circuits. Reference numerals 100, 200, and 300 denote scanning lines, output lines, and power supply lines described in the above embodiments, 2001 denotes a scanning signal generation circuit, 2002 denotes a signal processing circuit, and 2000 denotes a sensing element array. 11 and 12 show an example of a signal processing circuit. Reference numeral 8 denotes a read switch, 500 denotes a signal output line, and 3000 and 3001 denote signal conversion circuits. Providing one signal conversion circuit 3000 for each lead wire as shown in FIG. 11 has the advantage that the operating frequency of the signal conversion circuit can be reduced. However, in this case, the area occupied by the chip increases. Further, as shown in FIG. 12, the signal conversion circuit 3001 is connected to the signal output line by one.
Providing only one is advantageous in that the chip occupation area of the signal conversion circuit can be reduced. However, in this case, the operating frequency increases.

Embodiment 7 In the above embodiments, the fingerprint has irregularities continuously appearing at a constant cycle due to its characteristics. By making the shape of the sensing electrode square or rectangular instead of round or trapezoidal, it is possible to effectively increase the ground area with respect to continuous irregularities at a constant period. Here, since the pitch of the fingerprint is said to be about 100 μm for a child, if the distance between the sensing electrodes is set to 50 μm or less, the fingerprint has a resolution enough to discriminate the fingerprint.

Embodiment 8 FIG. Also, the aspect ratio of the sensing element array, that is, in an array of N rows × M columns, N
Considering the value of / M, it is also possible to adopt a configuration in which the array is scanned in the row (horizontal) direction when it is 1 or more, and the array is scanned in the column (vertical) direction when it is 1 or less. The signal from the sensing element is sent to a signal processing circuit via a lead. The lead line always crosses the scanning signal line by the number of scanning signal lines in the array. Further, there may be a case where a portion intersects with various wirings. Such intersections become parasitic capacitances, which degrade the S / N ratio. Therefore, by taking into account the aspect ratio of the object to be measured, the S / N ratio can be improved by configuring so that the number of times the lead wire intersects with the various wires is reduced.

Embodiment 9 Further, a configuration in which a dielectric is deposited on the sensing electrode may be adopted. When the area of the entire array cannot be made large, the fluctuation of the sensing capacitance determined by the dielectric constant of air is small. Therefore, if a capacitance that is connected in series with the sensing capacitance is added, a change in the sensing capacitance can be detected with high sensitivity, and the S / N ratio of the sensor can be improved. In addition, there is an effect of protecting the sensing electrode from deterioration.

Embodiment 10 FIG. In addition, the sensor
It is also possible to adopt a configuration in which the semiconductor device is manufactured not on a Si substrate but on a dielectric substrate. Since the Si substrate has conductivity, a parasitic capacitance is generated between the substrate and the circuit, and the S / N ratio is deteriorated. Since the presence of a floating capacitor can be ignored, the S / N ratio can be increased by fabricating a sensor on a dielectric substrate.
The ratio can be improved. Further, the cost can be reduced because the substrate does not need to use expensive Si.

Embodiment 11 FIG. Further, as shown in FIG. 13, a sensor may be built together with an image display device to form an unevenness detecting device. In FIG. 13, 10
000 is an image display device such as a TFT, and 4000 is an unevenness detection sensor, which are formed on one substrate 11000. In a method in which a user inputs information in accordance with a screen display, conventionally, a sheet-like sensor was attached on an image display device, so that the cost was high. The cost can be reduced by sharing this configuration and the input / output substrate for the sensor with the input / output substrate of the image display device.

Embodiment 12 FIG. Further, the apparatus may include a sensor, a memory, a power supply, a microprocessor, and the like, and may be a device that collates at least one identified fingerprint by itself. For example, as shown in FIG.
By configuring the 000, the unevenness detection sensor 4000, and the arithmetic system 30000 as one fingerprint collation device 12000, it can be used even in a place isolated from other arithmetic systems. For example, a door. Also, since there is no connection with the outside, it becomes difficult to hinder the exchange of information. Therefore, safety is improved.

Embodiment 13 FIG. The unevenness detection sensor described in the above embodiment can be used for personal identification such as an automatic teller machine or a credit card authentication machine. In the past, objects that used to identify themselves only with a personal identification number can dramatically improve security by recognizing physical characteristics such as fingerprints.

Embodiment 14 FIG. FIG. 15 is a diagram showing an example of the unevenness detecting device according to Embodiment 14 of the present invention. 4000 is a sensor, 5000 is a device housing, 6000 is a conductor, 70
00 is a shock absorbing device. Generally, an object has a floating potential. Therefore, if an object is brought into direct contact with the sensor, the sensor may cause dielectric breakdown.

In this configuration, the object first contacts the conductor 6000. The conductor 6000 is connected to a power supply, and allows the electric charge held by the object to flow to the power supply. Next, in order to read the unevenness of the object, when the object is pressed, the shock absorber 7000 shrinks, and the surface of the object
Touch 00. Then, the sensor operates to detect the unevenness of the object. In this way, a floating conductor is negated by providing a movable conductor connected to a power supply at a portion where the object accesses the sensor so that the object always contacts the ground before contacting the sensor.

With this configuration, insulation breakdown and malfunction of the sensor can be prevented. In addition, since the object does not have a floating potential and the surface potential of the object is almost constant and contacts the sensor, the S / N ratio can be improved.

Embodiment 15 FIG. FIGS. 16A and 16B show an example of the unevenness detecting device according to the fifteenth embodiment. 4000 is an unevenness detection sensor, 50000 is a conductive cover, 6
0000 is a conductive rail. First, the object contacts the cover 50000 in the state of FIG. The cover 50000 is connected to the power supply via the rail 60000, and allows the electric charge held by the object to flow to the power supply. Next, in order to read the irregularities of the object, the cover 50000 is slid along the rail 60000 to reach the state shown in FIG.
Touch 00. Then, the sensor operates to detect the unevenness of the object. In this way, a floating conductor is negated by providing a movable conductor connected to a power supply at a portion where the object accesses the sensor so that the object always contacts the ground before contacting the sensor.

With this configuration, as in the fourteenth embodiment, the sensor can be prevented from dielectric breakdown and malfunction, and since the object has no floating potential and the surface potential of the object is almost constant and contacts the sensor, the S / N ratio is reduced. Can be improved. Further, when no detection is performed, the cover is closed, which has an effect of protecting the sensor surface.

[0050]

According to the first aspect of the present invention, there is provided an unevenness detecting sensor, wherein the sensing elements are arranged in an array of N rows and M columns, and are arranged along each row of the sensing element array. A first power supply line, a second power supply line, and an output line, and a scanning line disposed along each column of the sensing element array, wherein the sensing element has an input terminal, an output terminal, and a control input. A control circuit having a terminal, a sensing electrode,
, A second switch, and a capacitor,
The sensing electrode is connected to one end of the first switch, the other end of the first switch is connected to one end of the second switch, one end of the capacitor and an input terminal of the control circuit, The other end of the switch is connected to the first power supply line, the other end of the capacitor is connected to the second power supply line, the output terminal of the control circuit is connected to the output line, and the control input terminal of the control circuit is connected to the scan line. Since they are connected to the lines, respectively, even if the object moves during scanning, accurate unevenness can be detected.

In the unevenness detecting sensor according to the second aspect of the present invention, since the control circuit is an amplifier, a sensor having a high S / N ratio can be obtained.

In the unevenness detecting sensor according to the third aspect of the present invention, since the control circuit is a single MOS transistor, the area occupied by the sensing element can be reduced, and the resolution can be improved.

According to a fourth aspect of the present invention, there is provided the unevenness detecting sensor, wherein the gate electrode of the MOS transistor is an input terminal, and one of the source electrode and the drain electrode is an output terminal.
Since the other electrode is used as the control input terminal, the area occupied by the sensing element can be reduced, and the resolution is improved.

In the unevenness detecting sensor according to a fifth aspect of the present invention, the gate electrode of the MOS transistor is a control input terminal, one of the source electrode and the drain electrode is an input terminal, and the other electrode is an output terminal. The area occupied by the sensing element can be reduced, and the resolution can be improved.

In the unevenness detecting sensor according to the sixth aspect of the present invention, one end of the third switch is connected to the sensing electrode, and the other end of the third switch is connected to the second power supply line. Since all the sensing electrodes in the state can be reset to any specified potential, the S / N ratio is improved.

According to the present invention, at least one of the first power supply line, the second power supply line, and the control line of the first, second, and third switches is adjacent to each other. Since the elements are shared, the degree of integration of the sensor is improved, and a decrease in the S / N ratio can be prevented.

In the unevenness detecting sensor according to the present invention, since the signal processing circuit for processing data from the sensing element is formed on the same substrate as the sensing element, the S / N ratio can be improved and the number of parts can be reduced. Can be reduced.

In the unevenness detecting sensor according to the ninth aspect of the present invention, the shape of the sensing electrode is square or rectangular, and the pitch between adjacent sensing elements in the sensing element array is within 50 μm. A suitable resolution can be obtained.

According to a tenth aspect of the present invention, in the above-described array of N rows × M columns, N / M is
When the value is 1 or more, the array is scanned in the row direction, and when N / M is 1 or less, the array is scanned in the column direction.
Higher ratios are obtained.

According to the eleventh aspect of the present invention, since a dielectric is deposited on the sensing electrode, a high S / N ratio can be obtained even when the array area cannot be made large. Also, deterioration of the sensing electrode can be prevented.

The unevenness detecting sensor according to the twelfth aspect of the present invention has a high S / N ratio because the sensor including the sensing element and the signal processing circuit is formed on the dielectric substrate. Further, since expensive Si is not required for the substrate, a low-cost substrate can be provided.

In the unevenness detecting device according to the thirteenth aspect of the present invention, since the unevenness detecting sensor including the sensing element and the signal processing circuit is formed on the same substrate as the image display device, a low-cost device can be provided.

According to the fingerprint matching device of the present invention, since the unevenness detecting sensor according to any one of the first to thirteenth aspects is used as a sensor for detecting a fingerprint, it can be used even in a place isolated from other arithmetic systems. Can be provided, and those that are hard to break can be provided.

Since the personal identification device of the present invention has the fingerprint collating device of the fourteenth aspect, it is possible to remarkably improve the security by recognizing the physical feature of the fingerprint. It can also provide something that is hard to break.

In the unevenness detecting device according to the present invention, since a movable conductor connected to a power supply is provided at a portion where an object accesses the sensor, dielectric breakdown of the sensor is prevented, and S / N is prevented. A product with a high ratio can be provided.

[Brief description of the drawings]

FIG. 1 is a circuit diagram showing a configuration of a main part of an unevenness detection sensor according to Embodiment 1 of the present invention.

FIG. 2 is a circuit diagram showing a configuration of a main part of an unevenness detection sensor according to Embodiment 2 of the present invention.

FIG. 3 is a circuit diagram showing a configuration of a main part of an unevenness detection sensor according to Embodiment 3 of the present invention.

FIG. 4 is a circuit diagram showing a configuration of a main part of an unevenness detection sensor according to Embodiment 4 of the present invention.

FIG. 5 is a circuit diagram showing another configuration of a main part of the unevenness detection sensor according to Embodiment 4 of the present invention.

FIG. 6 is a circuit diagram showing still another configuration of the main part of the unevenness detection sensor according to Embodiment 4 of the present invention.

FIG. 7 is a circuit diagram showing a configuration of a main part of an unevenness detection sensor according to a fifth embodiment of the present invention.

FIG. 8 is a circuit diagram showing another configuration of a main part of the unevenness detection sensor according to the fifth embodiment of the present invention.

FIG. 9 is a circuit diagram showing still another configuration of the main part of the unevenness detection sensor according to Embodiment 5 of the present invention.

FIG. 10 is a circuit diagram showing a configuration of an unevenness detection sensor according to Embodiment 6 of the present invention.

11 is a circuit diagram showing a configuration of the signal processing circuit shown in FIG.

FIG. 12 is a circuit diagram illustrating another configuration of the signal processing circuit illustrated in FIG. 11;

FIG. 13 is a diagram showing a configuration of an unevenness detecting device according to an eleventh embodiment of the present invention.

FIG. 14 is a diagram showing a configuration of a fingerprint matching device according to a twelfth embodiment of the present invention.

FIG. 15 is a circuit diagram showing a configuration of an unevenness detecting device according to Embodiment 14 of the present invention.

FIG. 16 is a circuit diagram showing a configuration of an unevenness detecting device according to Embodiment 15 of the present invention.

FIG. 17 is a circuit diagram showing a main part of a conventional unevenness detection sensor.

[Explanation of symbols]

Reference Signs List 1 sensing electrode 2 amplifier as control circuit 3, 30 MOS transistor as control circuit 4 third switch 5 first switch 6 second switch 10 capacitor 21 input terminal of amplifier 22 control input terminal of amplifier 23 output of amplifier Terminal 31 Gate electrode of MOS transistor as input terminal 32 Source electrode of MOS transistor as control input terminal 33 Drain electrode of MOS transistor as output terminal 301 Drain electrode of MOS transistor as input terminal 302 MOS transistor as control input terminal A gate electrode 303 of a MOS transistor as an output terminal of the MOS transistor 100 scanning line, 200 output line, 300 second power line 400 first power line 2002 signal processing circuit 10000 image display device 6000, 0000 movable conductor

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Akihiro Suzuki 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Mitsui Electric Co., Ltd. (72) Inventor Akihiko Iwata 2-3-2 Marunouchi, Chiyoda-ku, Tokyo 3 F term in Ryo Electric Co., Ltd. (reference) 2F063 AA41 BA29 CA08 DA02 DA05 DD07 HA04 4C038 FF01 FF05 FG00 5B043 BA02 DA07 5B047 AA25 BC01 DA01

Claims (16)

[Claims] 1. A sensing element array in which sensing elements are arranged in an array of N rows and M columns, and a first power supply line and a second power supply line arranged along each row of the sensing element array. And a scanning line arranged along each column of the sensing element array, wherein the sensing element includes a control circuit having an input terminal, an output terminal and a control input terminal, a sensing electrode, A first switch, a second switch, and a capacitor, wherein the sensing electrode is provided at one end of the first switch.
The other end of the first switch is connected to one end of the second switch, one end of the capacitor and an input terminal of the control circuit, the other end of the second switch is connected to the first power supply line,
The other end of the capacitor is connected to the second power supply line, the output terminal of the control circuit is connected to the output line, and the control input terminal of the control circuit is connected to the scanning line, respectively. . 2. The unevenness detecting sensor according to claim 1, wherein the control circuit is an amplifier. 3. The unevenness detecting sensor according to claim 1, wherein said control circuit comprises one MOS transistor. 4. The MOS transistor according to claim 3, wherein a gate electrode is an input terminal, one of a source electrode and a drain electrode of the MOS transistor is an output terminal, and the other electrode is a control input terminal. The unevenness detection sensor as described in the above. 5. The MOS transistor according to claim 3, wherein a gate electrode is a control input terminal, one of a source electrode and a drain electrode of the MOS transistor is an input terminal, and the other electrode is an output terminal. The unevenness detection sensor as described in the above. 6. The sensor according to claim 1, wherein one end of a third switch is connected to the sensing electrode, and the other end of the third switch is connected to the second power supply line. 3. The unevenness detection sensor according to 1. 7. The first power line, the second power line,
The control line of the first switch, the control line of the second switch, and at least one of the control lines of the third switch are shared by adjacent sensing elements. 7. The unevenness detection sensor according to any one of 6. 8. The unevenness detection sensor according to claim 1, wherein a signal processing circuit for processing data from the sensing element is formed on the same substrate as the sensing element. 9. The sensing electrode according to claim 1, wherein the shape of the sensing electrode is square or rectangular, and the pitch between adjacent sensing elements in the sensing element array is within 50 μm.
The unevenness detection sensor according to any one of the above. 10. In the array of N rows × M columns, if N / M is 1 or more, the array is scanned in the row direction;
11. The unevenness detection sensor according to claim 1, wherein the array is scanned in the column direction when N / M is 1 or less. 11. The unevenness detecting sensor according to claim 1, wherein a dielectric is deposited on the sensing electrode. 12. The unevenness detecting sensor according to claim 1, wherein the sensor comprising the sensing element and the signal processing circuit is formed on a dielectric substrate. 13. The unevenness detecting device according to claim 1, wherein the unevenness detecting sensor including the sensing element and the signal processing circuit is formed on the same substrate as the image display device. 14. A fingerprint matching device for matching at least one identified fingerprint, wherein the unevenness detecting sensor according to claim 1 is used as a sensor for detecting a fingerprint. Fingerprint matching device. 15. An individual discriminating apparatus comprising the fingerprint collating apparatus according to claim 14. 16. An unevenness detecting device, wherein a movable conductor connected to a power supply is provided at a portion where an object accesses the unevenness detecting sensor according to any one of claims 1 to 13.