JP2000277680A - Method for manufacturing semiconductor package - Google Patents

Method for manufacturing semiconductor package

Info

Publication number
JP2000277680A
JP2000277680A JP8648599A JP8648599A JP2000277680A JP 2000277680 A JP2000277680 A JP 2000277680A JP 8648599 A JP8648599 A JP 8648599A JP 8648599 A JP8648599 A JP 8648599A JP 2000277680 A JP2000277680 A JP 2000277680A
Authority
JP
Japan
Prior art keywords
substrate
dicing
positioning
semiconductor package
external connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8648599A
Other languages
Japanese (ja)
Inventor
Hideaki Makino
英彰 牧野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP8648599A priority Critical patent/JP2000277680A/en
Publication of JP2000277680A publication Critical patent/JP2000277680A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Landscapes

  • Wire Bonding (AREA)
  • Dicing (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor package, whereby external connection electrodes of a substrate can be aligned with high accuracy, in dicing with the substrate's external connection electrode surface adhered onto a flat support surface of a cutter, etc. SOLUTION: In this semiconductor package manufacturing method comprising dicing after a plurality of chips 11 are mounted on the surface 10a of a substrate 10, electrodes 13 are provided on a back surface 10b of the substrate 10, and the substrate 10 is aligned in the condition of the substrate 10 adhered to a flat support surface 14a, a light-permeable part aligned with electrodes 13 is formed on the substrate 10, the back surface 10b of the substrate 10 is adhered to the support surface 14a, and the alignment is made for dicing from the surface 10a of the substrate 10 to the light-permeable part as a reference.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明はICチップを実装し
た基板をダイシングして形成する半導体パッケージの製
造方法に関する。より詳しくは、基板を平坦な基準面に
接着した状態でダイシングのための位置合せを行う半導
体パッケージの製造方法に関するものである。
[0001] 1. Field of the Invention [0002] The present invention relates to a method of manufacturing a semiconductor package formed by dicing a substrate on which an IC chip is mounted. More specifically, the present invention relates to a method of manufacturing a semiconductor package in which alignment for dicing is performed with a substrate adhered to a flat reference surface.

【0002】[0002]

【従来の技術】半導体パッケージの小型化や高密度実装
化に伴い、ウェーハから切り出したICチップとほぼ同
程度の小型形状のCSP(Chip Size Package)が開発
されている。
2. Description of the Related Art Along with the miniaturization and high-density mounting of semiconductor packages, CSPs (Chip Size Packages) having a small shape almost the same as an IC chip cut from a wafer have been developed.

【0003】図3は、従来のCSPの製造方法を示す。
図3(A)に示すように、基板1の一方の面(表面)1
aに複数のICチップ2がチップ接続用電極パッド3を
介して実装される。この基板1の他方の面(裏面)1b
に外部接続用電極4が形成される。このような基板1
を、その表面(チップ実装面)1aを下側にして粘着テ
ープ(または接着材)5を介して例えばXYテーブル上
の支持部材6の平坦な支持面6a上に接着する。このX
Yテーブルはダイシングソー等の切断装置内に備る。こ
の状態でこのダイシングソー等の切断装置を用いてカッ
ティングライン7に沿って各ICチップ2ごとにカット
して分割する。これにより、同図(B)に示すようにC
SP8が形成される。このCSP8はその外部接続用電
極4を介して各種電子機器のマザーボード(図示しな
い)に接合される。
FIG. 3 shows a conventional CSP manufacturing method.
As shown in FIG. 3A, one surface (front surface) 1 of the substrate 1
a, a plurality of IC chips 2 are mounted via chip connection electrode pads 3. The other surface (back surface) 1b of the substrate 1
The external connection electrode 4 is formed on the substrate. Such a substrate 1
Is adhered to the flat support surface 6a of the support member 6 on, for example, an XY table via an adhesive tape (or an adhesive) 5 with its surface (chip mounting surface) 1a facing down. This X
The Y table is provided in a cutting device such as a dicing saw. In this state, each IC chip 2 is cut and divided along the cutting line 7 using a cutting device such as a dicing saw. As a result, as shown in FIG.
SP8 is formed. The CSP 8 is bonded to motherboards (not shown) of various electronic devices via the external connection electrodes 4.

【0004】この場合、基板1のダイシングに際し、外
部接続用電極4が基板1の上側に露出した状態でICチ
ップ実装面が支持部材に接合されるため、外部接続用電
極4を基板の上側から観察しながらこの電極4を基準に
してダイシングのための位置合せを行うことができる。
したがって、CSP製品として重要な外部電極4を高精
度でCSP外形に対し位置合せすることができる。
In this case, when the substrate 1 is diced, the IC chip mounting surface is joined to the supporting member in a state where the external connection electrodes 4 are exposed above the substrate 1. Positioning for dicing can be performed with reference to the electrode 4 while observing.
Therefore, the external electrode 4 important as a CSP product can be positioned with high accuracy relative to the outer shape of the CSP.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、図4
(A)に示すように、基板1に実装する各ICチップ2
の外形寸法が異なる場合、このICチップ実装面を平坦
な支持面上に接合することができない。このような場合
には、同図(B)に示すように、平坦な外部接続用電極
4を設けた基板1の裏面1b側を支持部材6上に接着し
てダイシングしていた。
However, FIG.
As shown in (A), each IC chip 2 mounted on the substrate 1
If the external dimensions are different, the IC chip mounting surface cannot be joined to a flat support surface. In such a case, as shown in FIG. 1B, dicing is performed by bonding the back surface 1b side of the substrate 1 provided with the flat external connection electrodes 4 to the support member 6.

【0006】しかしながら、このように外部接続用電極
面側を下にして支持部材6の支持面6aに接合すると、
外部接続用電極4が基板下に覆われて上から観察するこ
とができず、これらの電極4を基準とした位置合せがで
きなくなって、CSP製品として重要な外部接続方電極
4の位置精度が低下する。
However, when the external connection electrode surface is joined to the support surface 6a of the support member 6 with the electrode surface side down,
Since the external connection electrodes 4 are covered under the substrate and cannot be observed from above, alignment based on these electrodes 4 cannot be performed, and the positional accuracy of the external connection electrodes 4 important as a CSP product is reduced. descend.

【0007】本発明は、上記従来技術を考慮したもので
あって、基板の外部接続用電極面側を切断装置等の平坦
支持面上に接着した状態でダイシングを行う場合に、外
部接続用電極の位置合せが高精度でできる半導体パッケ
ージの製造方法の提供を目的とする。
The present invention has been made in consideration of the above-mentioned prior art, and is intended to provide an external connection electrode when dicing is performed with the external connection electrode surface side of a substrate adhered to a flat support surface such as a cutting device. It is an object of the present invention to provide a method of manufacturing a semiconductor package which can perform high-accuracy alignment.

【0008】[0008]

【課題を解決するための手段】前記目的を達成するた
め、本発明では、基板の表面に複数のチップを搭載し、
この基板の裏面に電極を設け、この基板を平坦な支持面
に接着した状態でこの基板を位置合せしてダイシングす
る半導体パッケージの製造方法において、前記基板に、
前記電極に対し位置合せされた光透過部を形成し、この
基板の裏面側を前記支持面に接着し、前記基板の表面側
から前記光透過部を基準としてダイシングのための位置
合せを行うことを特徴とする半導体パッケージの製造方
法を提供する。
According to the present invention, a plurality of chips are mounted on a surface of a substrate.
An electrode is provided on the back surface of the substrate, and the substrate is aligned and diced in a state where the substrate is bonded to a flat support surface.
Forming a light transmitting portion aligned with the electrode, bonding a back surface side of the substrate to the support surface, and performing positioning for dicing based on the light transmitting portion from the front surface side of the substrate; And a method of manufacturing a semiconductor package characterized by the following.

【0009】この構成によれば、電極が形成されたほぼ
平坦な基板裏面側を平坦な支持面に接着した状態で裏面
側から例えば光を照射することにより、電極に予め位置
合せされている基板の光透過部を光が透過し、基板に覆
われた状態の裏面側の電極を基板の表面側からこの光を
観察して位置合せを行って、電極の位置合せを行うこと
ができる。
According to this configuration, for example, light is irradiated from the back side in a state where the back side of the substantially flat substrate on which the electrodes are formed is adhered to the flat support surface, so that the substrate previously aligned with the electrodes is formed. The light can be transmitted through the light transmitting portion, and the electrode on the back side covered with the substrate can be aligned by observing this light from the front side of the substrate.

【0010】好ましい構成例では、前記基板の少なくと
も一部を光透過材料のみで形成するとともに、この光透
過材料部分にダイシングのための位置決めマークを設
け、この光透過材料部分に基板裏面側から光を照射して
前記位置決めマークを基板表面側から検出し、この位置
決めマークを基準として前記電極の位置合せを行うこと
を特徴としている。
In a preferred configuration example, at least a part of the substrate is formed only of a light transmitting material, and a positioning mark for dicing is provided on the light transmitting material portion. The positioning mark is detected from the substrate surface side by irradiating the substrate, and the positioning of the electrodes is performed with reference to the positioning mark.

【0011】この構成によれば、基板裏面側の電極に対
し予め位置合せされた位置決めマークを基板の光透過部
分に設け、この位置決めマークを基板裏面側からの光照
射により基板表面側から観察することにより、この位置
決めマークを基準として電極の位置合せが行われる。
According to this structure, a positioning mark pre-aligned with the electrode on the rear surface of the substrate is provided on the light transmitting portion of the substrate, and the positioning mark is observed from the front surface of the substrate by irradiating light from the rear surface of the substrate. Thus, the positioning of the electrodes is performed based on the positioning marks.

【0012】別の好ましい構成例では、前記基板は位置
決め用の貫通孔を有し、この貫通孔を基準としてダイシ
ングのための位置合せを行うことを特徴としている。
In another preferred configuration, the substrate has a positioning through hole, and positioning for dicing is performed based on the through hole.

【0013】この構成によれば、基板セット時の基準に
なるとともに電極パターン形成のための位置合せの基準
となるアライメント用の貫通孔を利用して、この貫通孔
を基板表面側から観察して基板裏面の電極の位置合せを
行うことができる。
According to this configuration, the through hole for alignment is used as a reference when setting the substrate and also as a reference for alignment for forming the electrode pattern. The position of the electrode on the back surface of the substrate can be adjusted.

【0014】別の好ましい構成例では、前記基板上に形
状の異なる複数の一般チップが混在することを特徴とし
ている。
In another preferred configuration example, a plurality of general chips having different shapes are mixed on the substrate.

【0015】この構成によれば、形状の異なる一般チッ
プが混在するモジュールのような基板に対し高精度の電
極位置合せが可能になり、各種電子製品のモジュールに
対し本発明を適用して製品の信頼性を高めることができ
る。
According to this configuration, highly accurate electrode positioning can be performed on a substrate such as a module in which general chips having different shapes are mixed, and the present invention is applied to modules of various electronic products. Reliability can be improved.

【0016】[0016]

【発明の実施の形態】以下本発明の実施の形態について
図面を参照して説明する。図1は、本発明の実施形態に
係るCSP製造工程の説明図である。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is an explanatory diagram of a CSP manufacturing process according to an embodiment of the present invention.

【0017】基板10の表面10a上に複数のICチッ
プ11(1個のみ図示)がチップ接続用電極パッド12
を介して実装される。基板10の裏面10bには各IC
チップ11に対応して外部接続用電極13が形成され
る。この基板10は、光を透過する半透明な樹脂材料で
形成され、多層配線構造の場合には内層パターン19が
形成される。この内層パターン19は、基板10の端部
10c近傍には形成されず、基板10の端部10c近傍
は光が透過する。この基板端部10c近傍の光透過部分
に位置決めマーク16が形成される。この位置決めマー
ク16は、外部接続用電極13とともにフォトリソグラ
フィ法によりパターニングされて形成されるため、外部
接続用電極13に対し極めて高い精度で位置合せされた
状態で基板裏面に形成される。
On the surface 10a of the substrate 10, a plurality of IC chips 11 (only one is shown)
Implemented via Each IC is provided on the back surface 10b of the substrate 10.
External connection electrodes 13 are formed corresponding to the chips 11. This substrate 10 is formed of a translucent resin material that transmits light, and in the case of a multilayer wiring structure, an inner layer pattern 19 is formed. The inner layer pattern 19 is not formed near the end 10 c of the substrate 10, and light is transmitted near the end 10 c of the substrate 10. A positioning mark 16 is formed in a light transmitting portion near the substrate end 10c. Since the positioning mark 16 is formed by patterning with the external connection electrode 13 by a photolithography method, the positioning mark 16 is formed on the back surface of the substrate in a state where the positioning mark 16 is aligned with the external connection electrode 13 with extremely high accuracy.

【0018】このような基板10は、外部接続用電極1
3が形成されたほぼ平坦な裏面10b側を下向きにして
粘着テープ(または接着材)18を介して支持部材14
の上面の平坦な支持面14aに接合される。支持部材1
4は、基板10の端部10cの裏面側に光源15を備え
る。基板10の端部10cの上方にはカメラ17が備
る。
Such a substrate 10 is provided with the external connection electrode 1.
The support member 14 is placed via an adhesive tape (or an adhesive) 18 with the substantially flat back surface 10b on which the surface 3 is formed facing downward.
Is joined to the flat support surface 14a on the upper surface. Support member 1
4 includes a light source 15 on the back side of the end 10 c of the substrate 10. A camera 17 is provided above the end 10 c of the substrate 10.

【0019】上記構成において、光源15により基板1
0の裏面側から基板の端部10c(光透過部分)を照射
して、カメラ17により位置決めマーク16を撮像す
る。撮像された位置決めマーク16の画像処理により、
位置決めマーク16の位置から外部接続用電極13の位
置が検出される。この検出位置データに基づいて支持部
材14を搭載するXYテーブル(図示しない)を駆動し
て、外部接続用電極13がダイシングソー(図示しな
い)等の切断装置に対し所定の位置に配置されるように
基板10を位置合せする。このように位置合せされた状
態で、ダイシングソー等により各ICチップごとに基板
10を分割する。分割後溶剤等により支持部材14を剥
離させてCSP単体を形成する。
In the above configuration, the light source 15 causes the substrate 1
An end 10c (light transmitting portion) of the substrate is illuminated from the back side of the substrate 0, and the camera 17 captures an image of the positioning mark 16. By image processing of the imaged positioning mark 16,
The position of the external connection electrode 13 is detected from the position of the positioning mark 16. An XY table (not shown) on which the support member 14 is mounted is driven based on the detected position data so that the external connection electrode 13 is arranged at a predetermined position with respect to a cutting device such as a dicing saw (not shown). The substrate 10 is aligned. In such a state, the substrate 10 is divided for each IC chip by a dicing saw or the like. After the division, the support member 14 is peeled off with a solvent or the like to form a CSP alone.

【0020】上記実施形態では基板自体に光を透過させ
て裏面側からの光照射により位置合せを行っているが、
このような構成に代えて、基板に貫通孔を設けてこの貫
通孔を基板表面側から観察してこの貫通孔を基準として
位置合せを行ってもよい。この場合、貫通孔の大きさや
基板裏面側の支持部材やXYテーブル等とのコントラス
トにより基板表面側から貫通孔が明確に視認できる場合
には基板裏面側から光を照射することなく表面側からの
観察または撮像によって位置合せをすることができる。
貫通孔が見にくい場合あるいは検出の精度や信頼性をさ
らに高める場合には、図1の実施形態と同様に基板裏面
側に光源を設けて貫通孔を照射してもよい。
In the above embodiment, alignment is performed by transmitting light through the substrate itself and irradiating light from the back side.
Instead of such a configuration, a through hole may be provided in the substrate, and the through hole may be observed from the surface side of the substrate, and the positioning may be performed with reference to the through hole. In this case, if the through-hole is clearly visible from the substrate front side due to the size of the through-hole and the contrast with the supporting member on the back side of the substrate, the XY table, or the like, the front side without irradiating light from the back side of the substrate. Positioning can be performed by observation or imaging.
When the through-hole is difficult to see or when the detection accuracy and reliability are further increased, a light source may be provided on the back surface side of the substrate as in the embodiment of FIG. 1 to irradiate the through-hole.

【0021】このような貫通孔は、基板にパターニング
された外部接続用電極に位置合せして新たに形成しても
よいし、あるいは基板に元々形成されているアライメン
ト用の貫通孔を利用してもよい。外部接続用電極等の配
線パターンは、このアライメント用の貫通孔を基準とし
て形成されるため、この貫通孔を用いて位置合せするこ
とにより外部接続用電極を切断装置に対し所定の位置に
位置合せすることができる。既設のアライメント用貫通
孔を利用すれば新たな設備を設けたり改造を行うことな
く容易に外部接続用電極の位置合せ精度を向上させるこ
とができる。
Such a through-hole may be newly formed in alignment with the external connection electrode patterned on the substrate, or by utilizing an alignment through-hole originally formed in the substrate. Is also good. Since the wiring pattern of the external connection electrode and the like is formed with reference to the through hole for alignment, the external connection electrode is positioned at a predetermined position with respect to the cutting device by performing alignment using the through hole. can do. If the existing through-holes for alignment are used, the positioning accuracy of the external connection electrodes can be easily improved without providing new equipment or modifying.

【0022】図2は、このような貫通孔を用いた位置合
せ方法を従来技術と比較した説明図であり、(A)は従
来技術、(B)は本発明方法を示す。従来は(A)に示
すように、基板20の表面20aおよび裏面20bのラ
ンドパターン22,23の位置決めをそれぞれ別の側か
ら別個に行っていたため、それぞれのランドパターンの
位置ずれ量をcとすれば両面のランドパターン間での位
置ずれ量は最大で2cとなる。
FIGS. 2A and 2B are explanatory views in which the positioning method using such a through hole is compared with a conventional technique, wherein FIG. 2A shows the conventional technique and FIG. 2B shows the method of the present invention. Conventionally, as shown in (A), the land patterns 22, 23 on the front surface 20a and the back surface 20b of the substrate 20 are separately positioned from different sides, respectively. For example, the displacement between the land patterns on both sides is 2c at the maximum.

【0023】これに対し、本発明方法により、基板20
に設けた貫通孔21を表面20a側から目視あるいはカ
メラで撮像して表面側のランドパターン22とともに裏
面側のランドパターン23の位置合せを行うことによ
り、両面のランドパターン間の位置ずれ量は最大でcと
なり、理論上位置ずれ量は従来方法に比べ1/2にな
る。
On the other hand, according to the method of the present invention, the substrate 20
The through hole 21 provided on the front surface 20a is visually or imaged with a camera, and the land pattern 23 on the rear surface is aligned with the land pattern 22 on the front surface. And c becomes theoretically, and the amount of displacement is theoretically halved compared to the conventional method.

【0024】[0024]

【発明の効果】以上説明したように、本発明において
は、電極が形成されたほぼ平坦な基板裏面側を平坦な支
持面に接着した状態で例えば裏面側から光を照射するこ
とにより、基板裏面の電極に予め位置合せされている基
板の光透過部(基板自体または貫通孔)を光が透過し、
基板の表面側から光透過部の位置合せを行って、裏面側
の電極の位置合せを行うことができる。
As described above, in the present invention, the substantially flat back surface of the substrate on which the electrodes are formed is adhered to the flat support surface, for example, by irradiating light from the back surface, thereby obtaining the back surface of the substrate. The light passes through the light transmitting portion (substrate itself or through hole) of the substrate which is pre-aligned with the electrode of
The alignment of the light transmitting portion can be performed from the front side of the substrate, and the alignment of the electrode on the back side can be performed.

【0025】これにより、基板表面側のICチップ実装
面の状態に左右されずに、基板裏面側の電極形成面の位
置合せができ、半導体パッケージの外形に対する電極位
置精度が向上する。また、電極面を下にしてダイシング
するため、切削粉等の塵埃その他の不純物が電極に付着
しにくくなり品質が向上する。
Thus, the position of the electrode formation surface on the back surface of the substrate can be adjusted without being affected by the state of the IC chip mounting surface on the front surface of the substrate, and the electrode position accuracy with respect to the outer shape of the semiconductor package is improved. In addition, since dicing is performed with the electrode surface facing down, dust and other impurities such as cutting powder hardly adhere to the electrode, thereby improving the quality.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明の実施形態に係る基板切断工程の途中
状態の基板断面図。
FIG. 1 is a sectional view of a substrate in a middle of a substrate cutting step according to an embodiment of the present invention.

【図2】 貫通孔による位置ずれ状態を従来技術と本発
明方法について比較した説明図。
FIG. 2 is an explanatory diagram comparing a state of displacement due to a through hole between a conventional technique and the method of the present invention.

【図3】 従来のCSP製造方法の説明図。FIG. 3 is an explanatory view of a conventional CSP manufacturing method.

【図4】 従来の異なるチップサイズのCSP製造方法
の説明図。
FIG. 4 is an explanatory view of a conventional CSP manufacturing method of different chip sizes.

【符号の説明】[Explanation of symbols]

1:基板、2:ICチップ、3:IC接続用電極パッ
ド、4:外部接続用電極、5:粘着テープ、6:支持部
材、7:カッティングライン、8:CSP、10:基
板、10a:表面、10b:裏面、11:ICチップ、
12:チップ接続用電極パッド、13:外部接続用電
極、14:支持部材、14a:支持面、15:光源、1
6:位置決めマーク、17:カメラ、18:粘着テー
プ、19:内層パターン、20:基板、21:貫通孔、
22,23:ランドパターン。
1: substrate, 2: IC chip, 3: IC connection electrode pad, 4: external connection electrode, 5: adhesive tape, 6: support member, 7: cutting line, 8: CSP, 10: substrate, 10a: surface , 10b: back surface, 11: IC chip,
12: chip connection electrode pad, 13: external connection electrode, 14: support member, 14a: support surface, 15: light source, 1
6: positioning mark, 17: camera, 18: adhesive tape, 19: inner layer pattern, 20: substrate, 21: through hole,
22, 23: Land pattern.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】基板の表面に複数のチップを搭載し、この
基板の裏面に電極を設け、この基板を平坦な支持面に接
着した状態でこの基板を位置合せしてダイシングする半
導体パッケージの製造方法において、 前記基板に、前記電極に対し位置合せされた光透過部を
形成し、 この基板の裏面側を前記支持面に接着し、 前記基板の表面側から前記光透過部を基準としてダイシ
ングのための位置合せを行うことを特徴とする半導体パ
ッケージの製造方法。
2. A semiconductor package comprising: mounting a plurality of chips on a surface of a substrate; providing electrodes on a back surface of the substrate; and positioning and dicing the substrate with the substrate adhered to a flat support surface. In the method, a light transmitting portion aligned with the electrode is formed on the substrate, a back surface side of the substrate is adhered to the support surface, and dicing is performed from the front surface side of the substrate with reference to the light transmitting portion. A method for manufacturing a semiconductor package, comprising:
【請求項2】前記基板の少なくとも一部を光透過材料の
みで形成するとともに、この光透過材料部分にダイシン
グのための位置決めマークを設け、この光透過材料部分
に基板裏面側から光を照射して前記位置決めマークを基
板表面側から検出し、この位置決めマークを基準として
前記電極の位置合せを行うことを特徴とする請求項1に
記載の半導体パッケージの製造方法。
2. A method according to claim 1, wherein at least a part of said substrate is formed only of a light transmitting material, a positioning mark for dicing is provided on said light transmitting material, and light is applied to said light transmitting material from the back side of the substrate. 2. The method of manufacturing a semiconductor package according to claim 1, wherein the positioning mark is detected from the substrate surface side, and the positioning of the electrodes is performed with reference to the positioning mark.
【請求項3】前記基板は位置決め用の貫通孔を有し、こ
の貫通孔を基準としてダイシングのための位置合せを行
うことを特徴とする請求項1に記載の半導体パッケージ
の製造方法。
3. The method of manufacturing a semiconductor package according to claim 1, wherein said substrate has a through hole for positioning, and positioning for dicing is performed based on said through hole.
【請求項4】前記基板上に形状の異なる複数の一般チッ
プが混在することを特徴とする請求項1に記載の半導体
パッケージの製造方法。
4. The method according to claim 1, wherein a plurality of general chips having different shapes are mixed on the substrate.
JP8648599A 1999-03-29 1999-03-29 Method for manufacturing semiconductor package Pending JP2000277680A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8648599A JP2000277680A (en) 1999-03-29 1999-03-29 Method for manufacturing semiconductor package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8648599A JP2000277680A (en) 1999-03-29 1999-03-29 Method for manufacturing semiconductor package

Publications (1)

Publication Number Publication Date
JP2000277680A true JP2000277680A (en) 2000-10-06

Family

ID=13888293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8648599A Pending JP2000277680A (en) 1999-03-29 1999-03-29 Method for manufacturing semiconductor package

Country Status (1)

Country Link
JP (1) JP2000277680A (en)

Similar Documents

Publication Publication Date Title
US4941255A (en) Method for precision multichip assembly
US7943422B2 (en) Wafer level pre-packaged flip chip
US8188584B1 (en) Direct-write wafer level chip scale package
US20050026323A1 (en) Method of manufacturing a semiconductor device
TWI288885B (en) Die attach area cut-on-fly method and apparatus
JPS61111561A (en) Semiconductor device
JP4696227B2 (en) Manufacturing method of semiconductor device
JP2007048876A (en) Manufacturing method for semiconductor device
JP2000277680A (en) Method for manufacturing semiconductor package
JP3801300B2 (en) Manufacturing method of semiconductor device
TWI473189B (en) Method for wafer-level testing diced multi-dice stacked packages
JPH0832296A (en) Positioning method for mounting electronic device
DK1402572T3 (en) A method of manufacturing a miniature amplifier and signal processing unit
US8242616B1 (en) Method for manufacturing semiconductor device and molded structure
TW563212B (en) Semiconductor package and manufacturing method thereof
JP2663929B2 (en) Semiconductor device and manufacturing method thereof
JPH10160793A (en) Probe substrate for bare-chip inspection and its manufacture as well as bare-chip inspection system
TWI264124B (en) Semiconductor package and the method of making the same
JP2006303517A (en) Manufacturing method of semiconductor device
KR20030070552A (en) Method and apparatus for processing an array of components
JP2001035970A (en) Manufacture of semiconductor device
JPH0719168Y2 (en) Photodiode array mounting device
CN115719731A (en) Method for processing wafer
TW201603131A (en) Carrier for dicing and dicing method
JPH01287936A (en) Replacement element chip mounting method