JP2000277493A5 - - Google Patents
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- Publication number
- JP2000277493A5 JP2000277493A5 JP1999084088A JP8408899A JP2000277493A5 JP 2000277493 A5 JP2000277493 A5 JP 2000277493A5 JP 1999084088 A JP1999084088 A JP 1999084088A JP 8408899 A JP8408899 A JP 8408899A JP 2000277493 A5 JP2000277493 A5 JP 2000277493A5
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing
- semiconductor
- semiconductor device
- etching
- plasma etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 12
- 238000000034 method Methods 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 7
- 238000005530 etching Methods 0.000 claims 4
- 238000001020 plasma etching Methods 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 239000004215 Carbon black (E152) Substances 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 3
- 229930195733 hydrocarbon Natural products 0.000 claims 3
- 150000002430 hydrocarbons Chemical class 0.000 claims 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims 1
- 239000005977 Ethylene Substances 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001294 propane Substances 0.000 claims 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8408899A JP2000277493A (ja) | 1999-03-26 | 1999-03-26 | 半導体基板のプラズマエッチング方法および半導体エッチング基板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8408899A JP2000277493A (ja) | 1999-03-26 | 1999-03-26 | 半導体基板のプラズマエッチング方法および半導体エッチング基板 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000277493A JP2000277493A (ja) | 2000-10-06 |
| JP2000277493A5 true JP2000277493A5 (enrdf_load_stackoverflow) | 2005-09-15 |
Family
ID=13820760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8408899A Pending JP2000277493A (ja) | 1999-03-26 | 1999-03-26 | 半導体基板のプラズマエッチング方法および半導体エッチング基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000277493A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2003067293A1 (ja) | 2002-02-06 | 2005-06-02 | 松下電器産業株式会社 | 光導波路の製造方法 |
| JP6328898B2 (ja) * | 2013-09-22 | 2018-05-23 | 国立大学法人名古屋大学 | Ｉｉｉ族窒化物半導体のエッチング方法およびｉｉｉ族窒化物半導体装置の製造方法 |
| JP7262375B2 (ja) * | 2019-11-26 | 2023-04-21 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
-
1999
- 1999-03-26 JP JP8408899A patent/JP2000277493A/ja active Pending
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