JP2000273626A - Thin film forming device, and liquid display device in which thin film is formed using it - Google Patents
Thin film forming device, and liquid display device in which thin film is formed using itInfo
- Publication number
- JP2000273626A JP2000273626A JP11079012A JP7901299A JP2000273626A JP 2000273626 A JP2000273626 A JP 2000273626A JP 11079012 A JP11079012 A JP 11079012A JP 7901299 A JP7901299 A JP 7901299A JP 2000273626 A JP2000273626 A JP 2000273626A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- susceptor
- mask
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 42
- 239000007788 liquid Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 239000010408 film Substances 0.000 claims abstract description 43
- 230000002093 peripheral effect Effects 0.000 claims abstract description 17
- 239000004973 liquid crystal related substance Substances 0.000 claims description 15
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 2
- 238000000427 thin-film deposition Methods 0.000 claims description 2
- 239000000428 dust Substances 0.000 abstract description 3
- 230000007547 defect Effects 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Liquid Crystal (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、薄膜の成膜装置に
関し、特に、チャンバー壁や内部構造物への膜の付着を
抑制し、これらに付着した膜の剥離による発塵を防止す
る薄膜の成膜装置の構造およびこれを用いて薄膜が形成
された液晶表示装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for forming a thin film, and more particularly, to a thin film forming apparatus which suppresses the adhesion of a film to a chamber wall or an internal structure and prevents the generation of dust due to the separation of the film attached to the chamber. The present invention relates to a structure of a film forming apparatus and a liquid crystal display device on which a thin film is formed using the same.
【０００２】[0002]
【従来の技術】図４は、従来の薄膜の成膜装置の構造を
示す断面図である。図において、１は真空チャンバーの
チャンバー壁、１２は被処理基板である基板３を載置す
るためのサセプター、４は基板３と対向して設けられた
ターゲット、１５はサセプター１２及び基板３と接触せ
ずに基板３周辺部を全周にわたって上側より覆う枠状の
マスク、６はグランドシールド、７はガス配管をそれぞ
れ示している。従来装置による薄膜の成膜方法を説明す
る。真空チャンバー内のサセプター１２に基板３を載置
し、ガス配管７を通してチャンバー内に放電用ガスを導
入する。基板３と対向するターゲット４に負電荷を印加
してプラズマ放電させ、スパッタリングにより基板３表
面に薄膜を形成する。サセプター１２とターゲット４の
間には、基板３周囲を覆う枠状のマスク１５が配置さ
れ、基板３周辺部への膜の付着を防止している。なお、
図５は、ターゲット４側からマスク１５を見た時の正面
図である。2. Description of the Related Art FIG. 4 is a sectional view showing the structure of a conventional thin film forming apparatus. In the figure, 1 is a chamber wall of a vacuum chamber, 12 is a susceptor for mounting a substrate 3 which is a substrate to be processed, 4 is a target provided opposite to the substrate 3, and 15 is a contact with the susceptor 12 and the substrate 3. A frame-shaped mask covering the periphery of the substrate 3 from above without covering the entire periphery, 6 is a ground shield, and 7 is a gas pipe. A method for forming a thin film using a conventional apparatus will be described. The substrate 3 is placed on the susceptor 12 in the vacuum chamber, and a discharge gas is introduced into the chamber through the gas pipe 7. Negative charges are applied to the target 4 facing the substrate 3 to cause plasma discharge, and a thin film is formed on the surface of the substrate 3 by sputtering. Between the susceptor 12 and the target 4, a frame-shaped mask 15 covering the periphery of the substrate 3 is arranged to prevent the film from adhering to the periphery of the substrate 3. In addition,
FIG. 5 is a front view when the mask 15 is viewed from the target 4 side.
【０００３】[0003]
【発明が解決しようとする課題】上記のような従来の成
膜装置においては、基板３表面における異常放電防止の
ため、マスク１５と基板３が接触しないように１ｍｍ以
上の間隔をあける必要があった。また、基板３周辺部ま
で成膜する場合には、マスク１５の開口面積を広くと
り、マスク１５と基板３が重なり合う量を小さくする必
要があった。このため、成膜時には、図６に示すよう
に、膜８が基板３とマスク１５の隙間を通って、マスク
１５裏面側やサセプター１２の周辺部及びガス配管７等
の構造物や、チャンバー壁１に回り込んで付着し、ある
程度の厚さになると膜８がフレーク９となって剥がれ、
これらが基板３上に付着するとパターン欠陥等を引き起
こし、製品の歩留まりを低下させるという問題があっ
た。例えば、上記の従来装置を用いて薄膜が形成された
液晶表示装置では、図７に示すようなパターン欠陥が発
生し易く、高品質な液晶表示装置を得ることが困難であ
った。図７において（ａ）は正常な配線、（ｂ）は歩留
まり低下の原因となる断線、（ｃ）（ｄ）は、品質低下
の原因となるパターン異常を示している。In the conventional film forming apparatus as described above, in order to prevent abnormal discharge on the surface of the substrate 3, it is necessary to provide an interval of 1 mm or more so that the mask 15 does not contact the substrate 3. Was. In addition, when the film is formed up to the peripheral portion of the substrate 3, it is necessary to increase the opening area of the mask 15 and to reduce the amount of overlap between the mask 15 and the substrate 3. For this reason, at the time of film formation, as shown in FIG. 6, the film 8 passes through the gap between the substrate 3 and the mask 15, and the structure such as the back side of the mask 15, the peripheral portion of the susceptor 12, the gas pipe 7, and the chamber wall. When the film 8 reaches a certain thickness, the film 8 becomes a flake 9 and peels off.
When these adhere to the substrate 3, there is a problem that pattern defects and the like are caused and the yield of products is reduced. For example, in a liquid crystal display device in which a thin film is formed using the above-described conventional device, pattern defects as shown in FIG. 7 are likely to occur, and it has been difficult to obtain a high quality liquid crystal display device. In FIG. 7, (a) shows normal wiring, (b) shows a disconnection that causes a reduction in yield, and (c) and (d) show a pattern abnormality that causes a quality reduction.
【０００４】本発明は、上記のような問題点を解消する
ためになされたもので、薄膜の成膜装置のチャンバー壁
や内部構造物への膜の付着を抑制し、これらに付着した
膜の剥がれによる発塵を防止するとともにパターン欠陥
のない高品質な液晶表示装置を得ることを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and suppresses the adhesion of a film to a chamber wall or an internal structure of a thin film forming apparatus. An object of the present invention is to provide a high-quality liquid crystal display device that prevents dust due to peeling and has no pattern defects.
【０００５】[0005]
【課題を解決するための手段】本発明に係わる薄膜の成
膜装置は、被処理基板が設置された真空チャンバー中に
放電用ガスを導入し、基板と対向して設けられたターゲ
ットに負電荷を印加してプラズマ放電させ、スパッタリ
ングにより基板表面に薄膜を形成する成膜装置におい
て、基板を載置するためのサセプターと、サセプター及
び基板と接触せずに基板周辺部を全周にわたって上側よ
り覆う枠状のマスクを備え、サセプター表面周辺部とマ
スク裏面に、互いに所定の間隔を保ちながら噛み合う堤
防状の凸部を設けたものである。また、サセプターとマ
スクの間隔は１〜５ｍｍとし、被処理基板側からサセプ
ターとマスクの隙間を通してチャンバー壁が直接見えな
い屈曲構造としたものである。According to the present invention, there is provided a thin film forming apparatus according to the present invention, wherein a discharge gas is introduced into a vacuum chamber in which a substrate to be processed is installed, and a negative charge is applied to a target provided opposite to the substrate. Is applied to cause a plasma discharge, and in a film forming apparatus for forming a thin film on the substrate surface by sputtering, a susceptor for mounting the substrate, and covering the peripheral portion of the substrate from above without being in contact with the susceptor and the substrate. A mask having a frame shape is provided, and a levee-like convex portion is provided on the peripheral portion of the susceptor surface and on the back surface of the mask while maintaining a predetermined interval therebetween. The distance between the susceptor and the mask is set to 1 to 5 mm, and the chamber has a bent structure in which the chamber wall is not directly visible from the substrate side through the gap between the susceptor and the mask.
【０００６】また、サセプター表面周辺部の凸部は、被
処理基板端部から数ｍｍ隔てた位置に設けられ、基板端
部と凸部の間の部分は、基板面よりも低い位置となるよ
うにしたものである。また、サセプター表面周辺部の凸
部及びマスク裏面の凸部は、それぞれ複数段ずつ設けら
れ、それらが交互に噛み合っているものである。さら
に、マスク裏面の凸部は、サセプター表面周辺部に設け
られた被処理基板に最も近い凸部よりも外周側に設けら
れているものである。また、本発明に係わる液晶表示装
置は、薄膜トランジスタを含むスイッチング素子および
このスイッチング素子を経てそれぞれ制御される表示素
子を有するＴＦＴアレイ基板と、透明電極およびカラー
フィルタ等を有する対向電極基板の間に液晶が挟持され
てなる液晶表示装置であって、上記のいずれかの薄膜の
成膜装置を用いて、基板表面に薄膜を形成したものであ
る。[0006] Further, the convex portion in the peripheral portion of the susceptor surface is provided at a position separated from the edge portion of the substrate by several mm, and the portion between the substrate edge portion and the convex portion is lower than the substrate surface. It was made. Further, a plurality of protrusions on the periphery of the susceptor surface and protrusions on the back surface of the mask are provided in a plurality of steps, respectively, and they are alternately meshed. Further, the convex portion on the back surface of the mask is provided on the outer peripheral side of the convex portion provided on the peripheral portion of the susceptor surface and closest to the substrate to be processed. In addition, the liquid crystal display device according to the present invention includes a liquid crystal between a TFT array substrate having a switching element including a thin film transistor and a display element controlled through the switching element, and a counter electrode substrate having a transparent electrode and a color filter. Is a liquid crystal display device in which a thin film is formed on a substrate surface by using any one of the above thin film forming apparatuses.
【０００７】[0007]
【発明の実施の形態】実施の形態１．以下に、本発明の
実施の形態を図面に基づいて説明する。図１は、本発明
の実施の形態１である薄膜の成膜装置の構造を示す断面
図である。図において、１は真空チャンバーのチャンバ
ー壁、２は被処理基板である基板３を載置するためのサ
セプター、４は基板３と対向して設けられたターゲッ
ト、５はサセプター２及び基板３と接触せずに基板３周
辺部を全周にわたって上側より覆う枠状のマスク、６は
グランドシールド、７はガス配管をそれぞれ示してい
る。また、本実施の形態では、サセプター２表面周辺部
とマスク５裏面に、互いに所定の間隔を保ちながら噛み
合う堤防状の凸部２ａ、５ａを設けている。さらに、サ
セプター２とマスク５の間隔は１〜５ｍｍとし、基板３
側からサセプター２とマスク５の隙間を通してチャンバ
ー壁１が直接見えない屈曲構造としたものである。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a sectional view showing a structure of a thin film forming apparatus according to Embodiment 1 of the present invention. In the figure, 1 is a chamber wall of a vacuum chamber, 2 is a susceptor for mounting a substrate 3 as a substrate to be processed, 4 is a target provided opposite to the substrate 3, and 5 is a contact with the susceptor 2 and the substrate 3. A frame-shaped mask covering the periphery of the substrate 3 from above without covering the entire periphery, 6 is a ground shield, and 7 is a gas pipe. Further, in the present embodiment, levee-shaped convex portions 2a and 5a that mesh with each other while maintaining a predetermined interval are provided on the peripheral portion of the surface of the susceptor 2 and the back surface of the mask 5. Further, the distance between the susceptor 2 and the mask 5 is 1 to 5 mm,
The chamber wall 1 has a bent structure in which the chamber wall 1 is not directly visible from the side through the gap between the susceptor 2 and the mask 5.
【０００８】本実施の形態における薄膜の成膜装置は、
基板３が設置された真空チャンバー中にガス配管７より
放電用ガスを導入し、基板３と対向して設けられたター
ゲット４に負電荷を印加してプラズマ放電させ、スパッ
タリングにより基板３表面に薄膜を形成するものであ
る。本実施の形態では、サセプター２表面周辺部の凸部
２ａは、基板３端部から数ｍｍ隔てた位置に設けられ、
基板３端部と凸部２ａの間の部分は、基板３面よりも低
い位置となるようにした。また、マスク５裏面のＬ字型
の凸部５ａは、サセプター２の凸部２ａよりも外周側に
設けられ、それぞれの凸部２ａ及び凸部５ａは互いに１
〜５ｍｍの間隔を保ちながら噛み合っている。In the present embodiment, the thin film forming apparatus
A discharge gas is introduced from a gas pipe 7 into a vacuum chamber in which the substrate 3 is installed, a negative charge is applied to a target 4 provided opposite to the substrate 3 to cause plasma discharge, and a thin film is formed on the surface of the substrate 3 by sputtering. Is formed. In the present embodiment, the projection 2a around the surface of the susceptor 2 is provided at a position separated from the end of the substrate 3 by several mm,
The portion between the end of the substrate 3 and the projection 2a was positioned lower than the surface of the substrate 3. Further, the L-shaped convex portion 5a on the back surface of the mask 5 is provided on the outer peripheral side with respect to the convex portion 2a of the susceptor 2, and the respective convex portions 2a and 5a
They are engaged while keeping the interval of ~ 5 mm.
【０００９】このように構成された薄膜の成膜装置で
は、成膜時に、図２に示すように、膜８は、主に基板
３、マスク５表面に付着し、基板３とマスク５の隙間を
通って回り込んだ膜８は、サセプター２表面周辺部の凸
部２ａ及びマスク５裏面の凸部５ａに付着するため、チ
ャンバー壁１やガス配管７等の内部構造物への付着が抑
制される。このため、従来の成膜装置で発生していた膜
８の剥がれによるフレークの発生を防止することができ
る。また、サセプター２及びマスク５は、表面処理によ
り、付着した膜８の密着強度が大きく剥がれにくいた
め、付着した膜８が所定の厚さになってフレークとなる
前に、定期的に交換すればよい。さらに、膜８が厚くな
った場合でも、基板３とサセプター２の凸部２ａには数
ｍｍの隙間を設けており、且つ基板３端部と凸部２ａの
間の部分は、基板３面よりも低い位置としているため、
凸部２ａに付着した膜８が剥がれても基板３には付着し
ない。In the thin film forming apparatus having the above-described structure, the film 8 mainly adheres to the surface of the substrate 3 and the mask 5 during the film formation as shown in FIG. The film 8 wrapped around the susceptor 2 adheres to the convex portion 2a around the surface of the susceptor 2 and the convex portion 5a on the back surface of the mask 5, so that the film 8 is prevented from adhering to internal structures such as the chamber wall 1 and the gas pipe 7. You. For this reason, it is possible to prevent the occurrence of flakes due to the peeling of the film 8 which has occurred in the conventional film forming apparatus. In addition, since the susceptor 2 and the mask 5 have a large adhesion strength of the adhered film 8 due to the surface treatment and are hardly peeled off, the susceptor 2 and the mask 5 need to be periodically replaced before the adhered film 8 becomes a predetermined thickness and becomes flakes. Good. Further, even when the film 8 becomes thicker, a gap of several mm is provided between the substrate 3 and the convex portion 2a of the susceptor 2, and the portion between the end portion of the substrate 3 and the convex portion 2a is higher than the surface of the substrate 3. Is also lower,
Even if the film 8 attached to the projection 2a is peeled off, it does not adhere to the substrate 3.
【００１０】以上のように、本実施の形態によれば、サ
セプター２表面周辺部とマスク５裏面に、互いに所定の
間隔を保ちながら噛み合う堤防状の凸部２ａ、５ａを設
けたので、成膜時に基板３とマスク５の隙間を通って回
り込んだ膜８が、サセプター２の凸部２ａ及びマスク５
の凸部５ａに付着することにより、チャンバー壁１やガ
ス配管７等の内部構造物への膜の付着が抑制され、付着
膜の剥がれによるフレークの発生を防止することができ
る。このため、フレークに起因するパターン欠陥等の不
良の発生が抑制され、製品の歩留まりが向上する。な
お、本実施の形態における薄膜の成膜装置は、薄膜トラ
ンジスタを含むスイッチング素子およびこのスイッチン
グ素子を経てそれぞれ制御される表示素子を有するＴＦ
Ｔアレイ基板と、透明電極およびカラーフィルタ等を有
する対向電極基板の間に液晶が挟持されてなる液晶表示
装置の製造に用いられる。本実施の形態における薄膜の
成膜装置を用いて、基板表面に薄膜が形成された液晶表
示装置は、パターン欠陥の発生が抑制されるため、高品
質な液晶表示装置を高い歩留まりで得ることが可能とな
る。As described above, according to the present embodiment, the levee-shaped convex portions 2a and 5a that engage with each other while maintaining a predetermined interval are provided on the periphery of the surface of the susceptor 2 and the back surface of the mask 5. Sometimes, the film 8 that has passed around the gap between the substrate 3 and the mask 5 forms the projection 2 a of the susceptor 2 and the mask 5.
Adhered to the convex portion 5a of the substrate, the adhesion of the film to the internal structure such as the chamber wall 1 and the gas pipe 7 is suppressed, and the occurrence of flakes due to the peeling of the adhered film can be prevented. For this reason, occurrence of defects such as pattern defects due to flakes is suppressed, and the yield of products is improved. Note that the thin film forming apparatus in this embodiment is a TF having a switching element including a thin film transistor and a display element each controlled via the switching element.
It is used for manufacturing a liquid crystal display device in which liquid crystal is sandwiched between a T array substrate and a counter electrode substrate having a transparent electrode, a color filter, and the like. In a liquid crystal display device in which a thin film is formed on a substrate surface using the thin film formation apparatus in this embodiment, generation of pattern defects is suppressed; therefore, a high-quality liquid crystal display device can be obtained with high yield. It becomes possible.
【００１１】実施の形態２．図３は、本発明の実施の形
態２である薄膜の成膜装置を示す部分拡大断面図であ
る。図において２ａ、２ｂは、サセプター２表面周辺部
に設けられた堤防状の凸部、５ａ、５ｂはマスク５裏面
に設けられた堤防状の凸部であり、サセプター２の凸部
２ａ、２ｂとマスク５裏面の凸部５ａ、５ｂは、互いに
所定の間隔を保ちながら噛み合っている。なお、図中、
同一、相当部分には同一符号を付し、説明を省略する。
本実施の形態では、サセプター２表面周辺部とマスク５
裏面に、それぞれ２段ずつ堤防状の凸部（２ａ、２ｂ、
５ａ、５ｂ）を設け、それらが交互に噛み合うように配
置した。マスク５裏面の凸部５ａ、５ｂは、サセプター
２表面周辺部に設けられた被処理基板３に最も近い凸部
２ａよりも外周側に設けられている。また、サセプター
２の凸部２ａは、基板３端部から数ｍｍ隔てた位置に設
けられ、基板３端部と凸部２ａの間の部分は、基板３面
よりも低い位置となるようにした。なお、本実施の形態
では、サセプター２及びマスク５の凸部をそれぞれ２段
ずつ設けたが、３段以上の複数段ずつ設け、それらが交
互に噛み合うようにしても良い。以上のように、本実施
の形態によれば、サセプター２表面周辺部とマスク５裏
面の堤防状の凸部を多段構造とすることにより、上記実
施の形態１よりもさらに成膜時の膜８のトラップ効果が
高まり、チャンバー壁１やガス配管７等の内部構造物へ
の膜８の付着をさらに抑制することができる。Embodiment 2 FIG. 3 is a partially enlarged sectional view showing a thin film forming apparatus according to a second embodiment of the present invention. In the figure, 2a and 2b are levee-shaped protrusions provided on the periphery of the surface of the susceptor 2, 5a and 5b are levee-shaped protrusions provided on the back surface of the mask 5, and 2a and 2b of the susceptor 2 The convex portions 5a and 5b on the back surface of the mask 5 are engaged with each other while maintaining a predetermined interval. In the figure,
The same or corresponding parts are denoted by the same reference numerals and description thereof will be omitted.
In this embodiment, the peripheral portion of the surface of the susceptor 2 and the mask 5
On the back, two steps of levee-like protrusions (2a, 2b,
5a, 5b), and they were arranged so that they could alternately mesh. The convex portions 5a and 5b on the back surface of the mask 5 are provided on the outer peripheral side of the convex portion 2a closest to the substrate 3 provided on the peripheral portion of the surface of the susceptor 2. The projection 2a of the susceptor 2 is provided at a position separated from the edge of the substrate 3 by several mm, and the portion between the edge of the substrate 3 and the projection 2a is positioned lower than the surface of the substrate 3. . In the present embodiment, the susceptor 2 and the mask 5 are each provided with two projections, but three or more projections may be provided, and they may be alternately meshed. As described above, according to the present embodiment, the peripheral portion of the surface of the susceptor 2 and the embankment-shaped convex portion on the back surface of the mask 5 are formed in a multi-stage structure. Of the film 8 can be further suppressed, and the adhesion of the film 8 to internal structures such as the chamber wall 1 and the gas pipe 7 can be further suppressed.
【００１２】[0012]
【発明の効果】以上のように、本発明によれば、基板を
載置するためのサセプターと、サセプター及び基板と接
触せずに基板周辺部を全周にわたって上側より覆う枠状
のマスクを備えた薄膜の成膜装置において、サセプター
表面周辺部とマスク裏面に、互いに所定の間隔を保ちな
がら噛み合う堤防状の凸部を設けたので、成膜時に基板
とマスクの隙間を通って回り込んだ膜が、サセプター及
びマスクに設けられた凸部に付着することにより、チャ
ンバー壁やガス配管等の内部構造物への膜の付着が抑制
され、付着膜の剥がれによるフレークの発生を防止する
ことができ、パターン欠陥の発生が抑制され、製品の歩
留まりが向上する。また、本発明における成膜装置を用
いて薄膜を形成することにより、パターン欠陥が少な
く、高品質な液晶表示装置が得られる。As described above, according to the present invention, there is provided a susceptor for mounting a substrate, and a frame-shaped mask for covering the entire periphery of the substrate from above without contacting the susceptor and the substrate. In the thin film deposition apparatus, a levee-shaped projection that engages while maintaining a predetermined interval is provided on the periphery of the susceptor surface and the back surface of the mask, so that the film that wraps around through the gap between the substrate and the mask during deposition However, by adhering to the protrusions provided on the susceptor and the mask, adhesion of the film to internal structures such as chamber walls and gas pipes is suppressed, and flakes due to peeling of the adhered film can be prevented. In addition, the occurrence of pattern defects is suppressed, and the product yield is improved. Further, by forming a thin film using the film forming apparatus of the present invention, a high-quality liquid crystal display device with few pattern defects can be obtained.
【図１】 本発明の実施の形態１である薄膜の成膜装置
の構造を示す断面図である。FIG. 1 is a cross-sectional view illustrating a structure of a thin film forming apparatus according to a first embodiment of the present invention.
【図２】 本発明の実施の形態１である薄膜の成膜装置
における成膜時の膜の付着状況を説明する部分拡大断面
図である。FIG. 2 is a partially enlarged cross-sectional view for explaining a state of adhesion of a film at the time of film formation in the thin film forming apparatus according to the first embodiment of the present invention.
【図３】 本発明の実施の形態２である薄膜の成膜装置
を示す部分拡大断面図である。FIG. 3 is a partially enlarged cross-sectional view showing a thin film forming apparatus according to a second embodiment of the present invention.
【図４】 従来の薄膜の成膜装置の構造を示す断面図で
ある。FIG. 4 is a sectional view showing the structure of a conventional thin film forming apparatus.
【図５】 従来の薄膜の成膜装置におけるマスクをター
ゲット側から見た時の正面図である。FIG. 5 is a front view of a mask in a conventional thin film forming apparatus when viewed from a target side.
【図６】 従来の薄膜の成膜装置における成膜時の膜の
付着状況を説明する部分拡大断面図である。FIG. 6 is a partially enlarged cross-sectional view for explaining the state of film adhesion during film formation in a conventional thin film forming apparatus.
【図７】 従来の薄膜の成膜装置を用いて形成された配
線のパターン欠陥を示す図である。FIG. 7 is a view showing a pattern defect of a wiring formed using a conventional thin film forming apparatus.
１ チャンバー壁、２、１２ サセプター、２ａ、２ｂ
凸部、３ 基板、４ ターゲット、５、１５ マス
ク、５ａ、５ｂ 凸部、６ グランドシールド、７ ガ
ス配管、８ 膜、９ フレーク。1 chamber wall, 2,12 susceptor, 2a, 2b
Projections, 3 substrates, 4 targets, 5 and 15 masks, 5a and 5b projections, 6 ground shields, 7 gas pipes, 8 films, 9 flakes.
Claims (6)
中に放電用ガスを導入し、上記基板と対向して設けられ
たターゲットに負電荷を印加してプラズマ放電させ、ス
パッタリングにより上記基板表面に薄膜を形成する成膜
装置において、上記基板を載置するためのサセプター
と、上記サセプター及び上記基板と接触せずに上記基板
周辺部を全周にわたって上側より覆う枠状のマスクを備
え、上記サセプター表面周辺部と上記マスク裏面に、互
いに所定の間隔を保ちながら噛み合う堤防状の凸部を設
けたことを特徴とする薄膜の成膜装置。1. A discharge gas is introduced into a vacuum chamber in which a substrate to be processed is installed, a negative charge is applied to a target provided opposite to the substrate to cause plasma discharge, and sputtering is performed on the surface of the substrate by sputtering. A film forming apparatus for forming a thin film, comprising: a susceptor for mounting the substrate; and a frame-shaped mask that covers the entire periphery of the substrate from above without contacting the susceptor and the substrate. An apparatus for forming a thin film, comprising: a bank-shaped projection that meshes with a predetermined interval between the front surface peripheral portion and the back surface of the mask.
とし、被処理基板側から上記サセプターと上記マスクの
隙間を通してチャンバー壁が直接見えない屈曲構造とし
たことを特徴とする請求項１記載の薄膜の成膜装置。2. The distance between the susceptor and the mask is 1 to 5 mm.
2. The thin film forming apparatus according to claim 1, wherein the chamber wall has a bent structure in which a chamber wall is not directly visible from a side of the substrate to be processed through a gap between the susceptor and the mask.
基板端部から数ｍｍ隔てた位置に設けられ、上記基板端
部と上記凸部の間の部分は、上記基板面よりも低い位置
となるようにしたことを特徴とする請求項１または請求
項２記載の薄膜の成膜装置。3. The projection on the periphery of the susceptor surface is provided at a position separated from the edge of the substrate to be processed by several mm, and the portion between the edge of the substrate and the projection is positioned lower than the surface of the substrate. 3. The thin film forming apparatus according to claim 1, wherein:
裏面の凸部は、それぞれ複数段ずつ設けられ、それらが
交互に噛み合っていることを特徴とする請求項１〜請求
項３のいずれか一項記載の薄膜の成膜装置。4. The projection according to claim 1, wherein the projections on the periphery of the susceptor surface and the projections on the back surface of the mask are provided in a plurality of steps, respectively, and they are alternately meshed with each other. Item 3. A thin film forming apparatus according to item 1.
辺部に設けられた被処理基板に最も近い凸部よりも外周
側に設けられていることを特徴とする請求項１〜請求項
４のいずれか一項記載の薄膜の成膜装置。5. The method according to claim 1, wherein the convex portion on the back surface of the mask is provided on an outer peripheral side of a convex portion provided on a peripheral portion of the susceptor surface and closest to the substrate to be processed. An apparatus for forming a thin film according to claim 1.
子およびこのスイッチング素子を経てそれぞれ制御され
る表示素子を有するＴＦＴアレイ基板と、透明電極およ
びカラーフィルタ等を有する対向電極基板の間に液晶が
挟持されてなる液晶表示装置であって、請求項１〜請求
項５のいずれか一項に記載の薄膜の成膜装置を用いて、
上記基板表面に薄膜を形成したことを特徴とする液晶表
示装置。6. A liquid crystal in which a liquid crystal is sandwiched between a TFT array substrate having a switching element including a thin film transistor and a display element controlled through the switching element, and a counter electrode substrate having a transparent electrode, a color filter, and the like. A display device, using the thin film deposition apparatus according to any one of claims 1 to 5,
A liquid crystal display device comprising a thin film formed on the surface of the substrate.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07901299A JP4101966B2 (en) | 1999-03-24 | 1999-03-24 | Thin film deposition equipment |
| TW089104683A TW581818B (en) | 1999-03-24 | 2000-03-15 | Thin film forming device |
| KR1020000013000A KR20000076858A (en) | 1999-03-24 | 2000-03-15 | thin film forming device and liquid crystal display having thin film formed using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07901299A JP4101966B2 (en) | 1999-03-24 | 1999-03-24 | Thin film deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000273626A true JP2000273626A (en) | 2000-10-03 |
| JP4101966B2 JP4101966B2 (en) | 2008-06-18 |
Family
ID=13678046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP07901299A Expired - Fee Related JP4101966B2 (en) | 1999-03-24 | 1999-03-24 | Thin film deposition equipment |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4101966B2 (en) |
| KR (1) | KR20000076858A (en) |
| TW (1) | TW581818B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007146290A (en) * | 2005-10-31 | 2007-06-14 | Applied Materials Inc | Process kit and target for substrate processing chamber |
| JP2012224921A (en) * | 2011-04-20 | 2012-11-15 | Ulvac Japan Ltd | Film forming apparatus |
| US8323412B2 (en) | 2007-04-27 | 2012-12-04 | Applied Materials, Inc. | Substrate support, substrate processing device and method of placing a substrate |
| KR101226478B1 (en) | 2011-02-01 | 2013-01-25 | (주)이루자 | Sputtering mask and sputtering apparatus using the same |
| KR101250237B1 (en) * | 2006-06-30 | 2013-04-04 | 엘지디스플레이 주식회사 | Susceptor and sputtering apparatus applying the same |
| WO2015125242A1 (en) * | 2014-02-19 | 2015-08-27 | 堺ディスプレイプロダクト株式会社 | Film deposition device |
| WO2018223659A1 (en) * | 2017-06-08 | 2018-12-13 | 北京北方华创微电子装备有限公司 | Deposition ring and chuck assembly |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59118883A (en) * | 1982-12-27 | 1984-07-09 | Fujitsu Ltd | Sputtering device |
| US5391275A (en) * | 1990-03-02 | 1995-02-21 | Applied Materials, Inc. | Method for preparing a shield to reduce particles in a physical vapor deposition chamber |
| JP4164154B2 (en) * | 1998-05-01 | 2008-10-08 | キヤノンアネルバ株式会社 | Ionization sputtering equipment |
| JP2000045069A (en) * | 1998-07-29 | 2000-02-15 | Matsushita Electric Ind Co Ltd | Magnetron sputtering device and sputtering method |
-
1999
- 1999-03-24 JP JP07901299A patent/JP4101966B2/en not_active Expired - Fee Related
-
2000
- 2000-03-15 TW TW089104683A patent/TW581818B/en not_active IP Right Cessation
- 2000-03-15 KR KR1020000013000A patent/KR20000076858A/en not_active Application Discontinuation
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007146290A (en) * | 2005-10-31 | 2007-06-14 | Applied Materials Inc | Process kit and target for substrate processing chamber |
| KR101250237B1 (en) * | 2006-06-30 | 2013-04-04 | 엘지디스플레이 주식회사 | Susceptor and sputtering apparatus applying the same |
| US8323412B2 (en) | 2007-04-27 | 2012-12-04 | Applied Materials, Inc. | Substrate support, substrate processing device and method of placing a substrate |
| KR101226478B1 (en) | 2011-02-01 | 2013-01-25 | (주)이루자 | Sputtering mask and sputtering apparatus using the same |
| JP2012224921A (en) * | 2011-04-20 | 2012-11-15 | Ulvac Japan Ltd | Film forming apparatus |
| WO2015125242A1 (en) * | 2014-02-19 | 2015-08-27 | 堺ディスプレイプロダクト株式会社 | Film deposition device |
| CN106029938A (en) * | 2014-02-19 | 2016-10-12 | 堺显示器制品株式会社 | Film deposition device |
| JPWO2015125242A1 (en) * | 2014-02-19 | 2017-03-30 | 堺ディスプレイプロダクト株式会社 | Deposition equipment |
| US10008372B2 (en) | 2014-02-19 | 2018-06-26 | Sakai Display Products Corporation | Film deposition apparatus |
| WO2018223659A1 (en) * | 2017-06-08 | 2018-12-13 | 北京北方华创微电子装备有限公司 | Deposition ring and chuck assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| TW581818B (en) | 2004-04-01 |
| JP4101966B2 (en) | 2008-06-18 |
| KR20000076858A (en) | 2000-12-26 |
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