JP2000269513A5 - - Google Patents
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- Publication number
- JP2000269513A5 JP2000269513A5 JP2000005580A JP2000005580A JP2000269513A5 JP 2000269513 A5 JP2000269513 A5 JP 2000269513A5 JP 2000005580 A JP2000005580 A JP 2000005580A JP 2000005580 A JP2000005580 A JP 2000005580A JP 2000269513 A5 JP2000269513 A5 JP 2000269513A5
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- JP
- Japan
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000005580A JP4656685B2 (ja) | 1999-01-14 | 2000-01-14 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11-8496 | 1999-01-14 | ||
| JP849699 | 1999-01-14 | ||
| JP2000005580A JP4656685B2 (ja) | 1999-01-14 | 2000-01-14 | 半導体装置 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010215788A Division JP5298094B2 (ja) | 1999-01-14 | 2010-09-27 | 半導体装置及びその作製方法 |
| JP2010236657A Division JP5244885B2 (ja) | 1999-01-14 | 2010-10-21 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000269513A JP2000269513A (ja) | 2000-09-29 |
| JP2000269513A5 true JP2000269513A5 (de) | 2007-03-08 |
| JP4656685B2 JP4656685B2 (ja) | 2011-03-23 |
Family
ID=26343017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000005580A Expired - Fee Related JP4656685B2 (ja) | 1999-01-14 | 2000-01-14 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4656685B2 (de) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101123097B1 (ko) | 2003-10-28 | 2012-03-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치의 제조방법 |
| JP4698998B2 (ja) * | 2004-09-30 | 2011-06-08 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
| JP4700317B2 (ja) * | 2004-09-30 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| EP1998374A3 (de) | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Halbleitervorrichtung mit Halbleiter-Oxidschicht und Herstellungsverfahren dafür |
| US7642114B2 (en) | 2006-07-19 | 2010-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Micro electro mechanical device and manufacturing method thereof |
| JP2008147207A (ja) * | 2006-12-06 | 2008-06-26 | Dainippon Printing Co Ltd | 薄膜トランジスタ基板 |
| US9171640B2 (en) * | 2009-10-09 | 2015-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Shift register and display device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6376482A (ja) * | 1986-09-19 | 1988-04-06 | Hitachi Ltd | 非晶質シリコン薄膜トランジスタ |
| JPH0818053A (ja) * | 1994-06-28 | 1996-01-19 | Mitsubishi Electric Corp | 薄膜トランジスタ及びその製造方法 |
| JPH10261801A (ja) * | 1997-03-19 | 1998-09-29 | Toshiba Electron Eng Corp | 薄膜トランジスタ装置及び薄膜トランジスタ装置の製造方法 |
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2000
- 2000-01-14 JP JP2000005580A patent/JP4656685B2/ja not_active Expired - Fee Related