JP2000268993A - Plasma measuring probe, plasma measuring device and plasma generator - Google Patents

Abstract

PROBLEM TO BE SOLVED: To accurately measure ion current and electron current of plasma. SOLUTION: In this plasma measuring device, a stainless steel mesh 12 is disposed on the opening of a conductor 11, the mesh is welded so as to be electrically connected to the conductor 11 and the opening is provided on the surface opposed to the plasma of the box-like conductor 11. In the space surrounded by the conductor 1 and the mesh 12, a doughnut-like conductive spacer 13 is on the mesh 12 and a doughnut-like conductive spacer 14 is placed facing to the conductive spacer 13. A collector 15 is placed so as to be in contact with the conductive spacer 14. One end of a conductor shaft 17 is mounted on the collector 15. The conductor shaft 17 is drawn from a hole 20 of the conductor shaft 17 to the outside of the conductor 11 and the other end thereof is mounted on a resistance 18 of 50 Ω.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to plasma measurement in a plasma generation apparatus for generating plasma by high-frequency discharge or applying high-frequency radio waves to extract plasma for performing substrate processing such as etching and ashing. The present invention relates to a probe for use, a plasma measurement device, and a plasma generation device including the probe.

[0002]

2. Description of the Related Art As is well known, silicon wafers and LCDs
As a method of performing an etching process or an ashing process on a substrate such as a substrate, there is a method in which a process gas is turned into plasma by discharge to perform a substrate process. Above all, a capacitively-coupled plasma generating apparatus in which two electrodes are installed in parallel in a reaction chamber and a high frequency (generally 13.56 MHz) voltage is applied to both electrodes to generate plasma is relatively simple in configuration. Since it is easy to cope with an increase in the area of the substrate, it is generally used.

In particular, in recent years, such a plasma generation apparatus has been required to have a larger diameter with an increase in the size of a substrate and a higher speed of plasma processing. With these demands, it is necessary to measure and control the plasma characteristics. Above all, the amount of ion current incident on the substrate is one of the main parameters that determine the speed of plasma processing,
Further, the distribution of the ion current on the substrate is one of the factors that determine the uniformity of the plasma processing.

[0004] In a plasma generation apparatus, there is an apparatus called a Faraday cup as an apparatus for measuring an ion current. FIG. 9 is a cross-sectional view illustrating a schematic configuration of an example Faraday cup.

In FIG. 9, an aluminum cup 94 insulated from a conductor 91 is provided in a cylindrical conductor 91 made of a metal such as stainless steel and having an opening 93 through which ions enter. Are located. This cup 94 is connected to the ground potential via a resistor 95. Further, a voltmeter 96 having a high input impedance is arranged in parallel with the resistor 95.

[0006] A grid 97 made of stainless steel mesh is arranged between the opening of the conductor 91 and the cup 94 so as not to contact the conductor 91 and the cup 94. The grid 97 is supplied with a negative constant voltage from the constant voltage power supply 98 to the conductor 91, and functions to block electrons in the charged particles passing through the opening 93 from entering the cup 94.

In the Faraday cup shown in FIG.
The ion current is measured by the following method. Opening 93
Of the charged particles that have passed through are blocked by the grid 97, and only ions can reach the cup 94. The ions arriving at the cup 94 flow to the ground through the resistor 95, and the ion current is measured by a voltmeter 96 as a voltage generated at the resistor 95.

[0008] However, the Faraday cup has the following problems. That is, in the Faraday cup, it is necessary to provide a grid 97 for blocking electrons between the opening 93 of the conductor 91 and the cup 94.
The distance between the opening 93 and the cup 94 cannot be reduced.

On the other hand, in a plasma generation apparatus for performing substrate processing, the buffer gas condition is usually several tens of meters.
Since it is used at a gas pressure of about Torr, ions passing through the opening collide with neutral particles (atoms, molecules, etc.) constituting the buffer gas before reaching the cup and decrease, so that the ion current is measured correctly. There is a problem that you can not.

[0010] Further, the Faraday cup requires a power supply for applying a potential to the grid, so that the cost is high and there is a problem that a space for installing these is required.

[0011]

As described above, in the conventional Faraday cup which is a probe for measuring an ion current, ions passing through the opening collide with neutral particles and decrease until reaching the cup. Therefore, there is a problem that the ion current cannot be measured correctly. Further, there is a problem in that a power supply for applying a potential to the grid is required, so that the cost is high and a space for installing these is required.

It is an object of the present invention to suppress collision between neutral particles and ions, suppress errors in ion current due to collision between ions and neutral particles, and eliminate the need for a power supply for applying a potential to the grid. An object of the present invention is to provide a plasma measurement probe and a plasma measurement device that can reduce costs and save space. It is another object of the present invention to provide a plasma generation device including such a plasma measurement probe.

[0013]

Means for Solving the Problems [Configuration] The present invention is configured as follows to achieve the above object.

(1) A plasma measuring probe according to the present invention (claim 1) is provided with a box-shaped conductor having an opening in at least a part of a surface facing plasma, and installed in the opening of the conductor. A mesh electrically connected to the conductor, a collector disposed in a space surrounded by the conductor and the mesh, electrically separated from the conductor and the mesh, and a resistor connected to the collector; It is characterized by the following.

(2) A plasma measuring probe according to the present invention (claim 2) is a box-shaped conductor having an opening provided on at least a part of a surface facing the plasma; It is characterized by comprising a mesh electrically connected to a conductor, and a collector arranged in a space surrounded by the conductor and the mesh and electrically separated from the conductor and the mesh.

(3) The plasma measuring apparatus according to the present invention (claim 3) is a box-shaped conductor having an opening provided on at least a part of a surface facing the plasma; A collector electrically connected to the collector, a collector disposed in a space surrounded by the conductor and the mesh, and electrically separated from the conductor and the mesh, a resistor connected to the collector, and a voltage applied to the resistor. And a voltage measuring unit for measuring the

(4) The plasma generating apparatus according to the present invention (claim 6) comprises a reaction vessel, a first electrode and a second electrode disposed in the reaction chamber and provided in parallel with each other; A gas supply mechanism for supplying a process gas between the first electrode and the second electrode, and a power supply mechanism for generating a plasma of the process gas by discharge accompanying injection of high-frequency power between the two electrodes. In the plasma generating apparatus, a box-shaped conductor having an opening in at least a part of a surface facing the plasma, a conductive mesh provided at the opening of the conductor, and a space surrounded by the conductor and the mesh. And a collector electrically isolated from the conductor and the mesh, and having a resistor connected to the collector, and a plasma measurement probe installed on the first electrode or the second electrode. And wherein the Rukoto. Note that this plasma generation device may be an ICP type or ECR type plasma generation device.

Preferred embodiments of the present invention are described below.
A spacer is provided between the collector and the mesh to insulate and separate the collector and the mesh. Still more preferably, the surface of the spacer in contact with the mesh is formed of a conductive material. A line interval of the mesh is smaller than an interval between the collector and the mesh. The surface of the collector facing the mesh has a planar shape. Magnetic field applying means for applying a magnetic field in a direction substantially parallel to the mesh is provided in a space between the collector and the mesh. In addition,
A permanent magnet is used as a magnetic field applying means. An A / D converter for converting the voltage waveform applied to the resistor from analog to digital, and a data processing unit for processing the voltage waveform to determine a plasma parameter.

[Operation] The present invention has the following operation and effects by the above configuration. The probe for plasma measurement according to the present invention does not require a mechanism such as a grid for shielding electrons, so that the collector can be brought close to the mesh within a range that does not make electrical contact. Under the general gas pressure of 50 mTorr of the plasma generating apparatus,
Assuming that the ion has a collision cross section of 1 × 10 ⁻¹⁴ cm ² with neutral particles, the mean free path of the ion is about 0.7 mm.
Therefore, by making the distance between the collector and the mesh less than this, it is possible to suppress the ion current error due to collision with the neutral particles of the ions to within a negligible range.

Further, the probe for plasma measurement according to the present invention does not require a power supply or the like for applying a potential to the grid, so that a cost can be significantly reduced and a measurement device which is significantly space-saving can be provided. it can.

[0021]

Embodiments of the present invention will be described below with reference to the drawings.

[First Embodiment] FIG. 1 is a sectional view showing a schematic configuration of a plasma measurement probe according to a first embodiment of the present invention.

As shown in FIG. 1, a box-shaped conductor 11 made of a metal such as stainless steel and having an opening facing the plasma is provided on the side surface of the box-shaped conductor 11 so that it can be easily attached to a plasma generating apparatus. , A thread groove is formed. A hole 20 is formed in a surface of the conductor 11 opposite to the surface on which the opening is formed.

A stainless mesh 12 having a wire diameter of 0.02 mm and a line interval of 0.02 mm is welded to the opening of the conductor 11 so as to be electrically connected to the conductor 11. The mesh 12 is electrically connected to the conductor 11 and has a function of shielding a high-frequency electric field from the collector 15 and a function of preventing external plasma from being disturbed by the opening of the conductor.

In a space surrounded by the conductor 11 and the mesh 12, a donut-shaped conductive spacer 13 made of, for example, molybdenum is in contact with the mesh 12, and a donut-shaped conductive spacer made of, for example, polyimide is further provided facing the conductive spacer 13. An insulating spacer 14 is provided. And
A collector 15 is provided so as to be in contact with the insulating spacer 14. An insulating film 16 is formed on a side surface of the collector 15. The insulating property between the mesh 12 and the collector 15 is ensured by the insulating spacer 14. Note that the conductive spacer 13 is an insulating spacer 14.
The ions and the electrons flowing into the surface of the insulating spacer escape from the mesh 12 to the conductor 11, and the electric field induced on the collector 15 by the surface charge of the insulating spacer 14 is reduced.
4 is suppressed.

Further, one end of a conductor shaft 17 is attached to the collector 15. The conductor shaft 17 is connected to the conductor 11
The other end is pulled out of the conductor 11 through the hole 20 and is attached to the resistor 18 of 50Ω. Conductor shaft 17
Between the hole 20 and the resin 21 for insulation and vacuum shielding,
Buried by

The size of the resistor 18 is generally selected to be sufficiently smaller than the floating impedance of the plasma measurement probe mainly composed of the conductor 11 and the collector 15, and the current flowing through the resistor 18 is affected by the floating impedance. To receive little. However,
Since the electron current has a high-frequency component and the ionic current is substantially constant at a high frequency, when only the ionic current component is measured, the size of the resistor 18 may be larger than the floating impedance.

Here, the inner diameter of the conductor 11 is 15 mm, and the outer diameter, the inner diameter, and the thickness of the conductive spacer 13 are each 15 m.
m, 8 mm, 0.05 mm, the outer diameter, inner diameter, and thickness of the insulating spacer 14 are 15 mm, 8 mm, and 0.1 m, respectively.
m, the outer diameter of the collector 15 is 10 mm. Mesh 1
2 and the collector 15 are formed by the conductive spacers 13 and the insulating spacers 14, and the distance between the spacers is 0.1 mm.
15 mm.

The cross section of collision between ions and neutral particles is 1 × 1
When the density is 0 ^-14 cm ² , the density of the neutral particles at which the mean free path of the ions becomes larger than 0.15 mm between the mesh and the collector is 6.7 × 10 ^-15 cm ^-3 .
The density of the neutral particles corresponds to a gas pressure of 240 mTorr when the buffer gas temperature is 75 ° C. according to the equation of state.
Therefore, in the plasma measurement probe shown in FIG.
For gas pressures below 40 mTorr, the effect of ions colliding with neutral particles and decreasing can be neglected.

In the plasma measurement probe 10 shown in FIG. 1, the space of the mesh 12 is sufficiently smaller than the space between the mesh 12 and the collector 15.
The effect of the high frequency electric field leaking from the mesh on the collector is reduced to a negligible level.

Next, the principle of measuring the ion current and the electron current by the present probe will be described. When a high-frequency electric field is applied to two opposing electrodes, the ions in the plasma existing between these two electrodes cannot follow the high-frequency electric field due to their large mass, and are extracted by an average electric field with respect to time. Has a substantially constant ion current value over time.
On the other hand, since the electrons in the plasma have a small mass and follow the high-frequency electric field, they flow into each electrode at a certain phase within one cycle of the high-frequency electric field, but do not flow into the electrodes at other phases. Therefore, in a phase in which electrons do not flow into the electrode, the value of the ion current can be obtained by blocking the induced current induced by the high-frequency electric field and measuring the value of the current flowing into the electrode.

Normally, the law of conservation of electric charge is satisfied on the electrode surface. Therefore, when the ionic current and the electron current are respectively integrated over one period, they coincide. Therefore, by measuring the ion current, the time average value of the electron current can be obtained, and conversely, by measuring the electron current, the ion current can be obtained.

In the measurement probe 10, the high-frequency electric field is shielded by the mesh 12 provided on the surface of the collector 15 facing the plasma. Therefore, the current flowing into the collector 15 is the sum of the two components of the ion current and the electron current. However, while the ionic current is almost constant with respect to the high-frequency electric field, the electron current has a waveform following the high-frequency electric field, so that each component can be separated.

The current flowing through the collector 15 is converted into a voltage by a resistor 18 connected to the collector 15 and output. In the output voltage waveform, the ionic current component is almost constant with the high-frequency electric field, and the electron current component follows the high-frequency electric field, so that both can be separated, and the ionic current and the electron current are measured separately. can do.

Next, FIG. 2 shows an example in which the plasma measurement probe 10 shown in FIG. 1 is attached to a plasma generator. FIG. 2 is a cross-sectional view showing a schematic configuration of a plasma generating apparatus to which the plasma measurement probe shown in FIG. 1 of the present invention is attached.

As shown in FIG. 2, in the reaction vessel 25, a disc-shaped first electrode 27 is supported by an insulating material 28, and is disposed so as to face the upper wall of the reaction vessel 25 in parallel. . In this example, the upper wall of the reaction vessel 25 also serves as the second electrode 26. On the upper surface of the first electrode 27, a substrate 29 to be processed such as a silicon wafer is arranged. One end of the RF power supply conductor 30 is connected to the lower surface of the first electrode 27,
The other end of the RF power supply conductor 30 is connected to a ground potential via a matching circuit 31 and a high frequency power supply 32 having an output frequency of 13.56 MH. Further, the reaction vessel 25 is connected to the ground potential. A process gas is introduced into the reaction vessel 25 by a gas supply mechanism (not shown).

As described above, the plasma generating apparatus shown in FIG. 2 is a capacitively coupled plasma generating apparatus for supplying high-frequency power to parallel plate type electrodes, and is generally used as a substrate processing apparatus for etching or the like. It is a device that is used.

In this plasma generation apparatus, the plasma measurement probe 10 is embedded in the second electrode 26 so that the opening is directed toward the inside of the reaction vessel 25. The collector 15 side of one end of the resistor 18 is connected to the signal line of the coaxial cable 33, and the other end is connected to the ground line of the coaxial cable 33. The plasma measurement probe 10 is connected to an analog / digital (A / D) converter 34 such as an oscilloscope via a coaxial cable 33.
And the data processing unit 35.

Next, the voltage waveform output from the probe 10 will be described. FIG. 3 is a characteristic diagram showing a voltage waveform output from the plasma measurement probe 10 when the plasma is generated by supplying power from the high-frequency power supply 32 to the reaction vessel 25 in the plasma generation apparatus shown in FIG. . Here, noise reduction is measured by averaging the voltage waveforms. In FIG. 3, the horizontal axis represents time, and the vertical axis represents voltage, and a voltage waveform that repeats with a period of 73 nanoseconds corresponding to a frequency of 13.56 MHz is obtained.

As shown in FIG. 3, the voltage waveform obtained from the probe 10 is divided into a region A where the voltage is almost constant and a region B where the voltage changes rapidly. Here, the region A has a phase in which electrons do not flow into the collector 15 and is a voltage generated only by the ion current component. On the other hand, the region B is a phase in which electrons flow into the collector 15, and is a voltage formed by the sum of an ion current component and an electron current component. Therefore, an ion current can be obtained by reading the voltage of the region A. Further, the voltage of the region A is extended to the region B, and the area of the portion formed by the extended line and the voltage waveform (the hatched portion in FIG. 3) is obtained, whereby the integrated value of the electron current and the average value of the electron current are obtained. Can be requested.

As a method of waveform processing for obtaining an ion current in the data processing unit 35, a method in which a region where a waveform changes sharply due to a contribution of an electron current is removed and averaging is performed, and a waveform is synchronized with a repetition frequency and the waveform is synchronized. The method can be selected according to the situation, such as a method of obtaining a current value at a certain time in a region where the region does not change abruptly, a method of obtaining a maximum value of the current, and performing waveform fitting or frequency decomposition. Note that the electron current can be obtained by a similar method.

As described above, with the probe for plasma measurement of the present invention, ions passing through the mesh do not collide with neutral particles until they reach the collector and are not reduced. it can.

Further, in the plasma measuring apparatus of the present invention,
Since a power supply and a circuit for shielding electrons are not required, it is possible to supply a plasma measuring apparatus which is significantly reduced in cost and space saving.

[Second Embodiment] FIG. 4 is a sectional view showing a schematic configuration of a plasma measurement probe according to a second embodiment of the present invention. In FIG. 4, the same parts as those in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted.

In the above embodiment, the current flowing into the collector 15 is converted into a voltage waveform by the resistor 18 and output. However, in this measurement probe, the current is directly supplied from the collector 15 without connecting the resistor 18. Terminals are attached so that waveforms can be extracted. In the case of this probe, an output waveform similar to that of the first embodiment can be obtained by connecting a terminal and a device for measuring a current waveform, for example, an oscilloscope by a cable and setting the input impedance of the current measuring unit to 50Ω.

[Third Embodiment] FIG. 5 is a sectional view showing a schematic configuration of a plasma measurement probe according to a third embodiment of the present invention. 5, the same parts as those in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted.

In this probe, as shown in FIG. 5, a permanent magnet 51 is embedded in a conductor 11, and a collector 15 and a mesh 12 are provided in a space between the collector 15 and the mesh 12.
A magnetic field is applied so as to be substantially parallel to.

Generally, when ions enter the collector 15, secondary electrons are emitted from the surface of the collector 15. The contribution of the secondary electrons may cause an error when obtaining the ion current and the electron current. However, since a magnetic field is applied to the space between the collector 15 and the mesh 12 substantially in parallel with the collector 15 and the mesh 12 as in the present probe, the trajectory of secondary electrons is bent by the magnetic field, and the collector Come back to 15.

In the present embodiment, a permanent magnet is embedded in the conductor 11 in order to apply a magnetic field substantially parallel to the collector 15 and the mesh 12, but other methods such as applying a magnetic field from the outside may be used. May be. Further, in the present embodiment, the resistor 18 is connected to the collector 15, and the voltage applied to the resistor 18 is output. However, similarly to the second embodiment, the current waveform may be directly extracted from the collector 15.

[Fourth Embodiment] Next, in this embodiment, another example of a plasma generating apparatus to which the plasma measuring probe of the present invention is applied will be described. FIG. 6 is a sectional view showing a schematic configuration of a plasma generating apparatus according to a fourth embodiment of the present invention. In FIG. 6, the same parts as those in FIG. 2 are denoted by the same reference numerals, and description thereof will be omitted.

In the first embodiment, the conductor 11 of the plasma measurement probe 10 is embedded in the second electrode 26. However, in the present embodiment, as shown in FIG. The second electrode 26 and the conductor 11 are integrated so that the mesh 12 is directly attached to the opening provided in the cavity. Also in this device, the ionic current or the electron current can be measured in the same manner as in the first embodiment.

[Fifth Embodiment] Next, an example of another plasma generating apparatus to which the probe for plasma measurement of the present invention is applied will be described.

FIG. 7 is a sectional view showing a schematic configuration of a plasma generator according to a fifth embodiment of the present invention. In addition,
In FIG. 7, the same parts as those in FIG.
The description is omitted.

In this apparatus, as shown in FIG. 7, the plasma measurement probe 10 (10a to 10e) is connected to the second electrode 26.
(In this example, n). In a plasma generation apparatus that performs an etching process or the like,
Due to the non-uniformity of the plasma density distribution and the ion current distribution, a problem occurs if the substrate processing speed is not uniform. Therefore, it is required to measure the ion current distribution. In this device, the measurement probe itself does not require a power source like a Faraday cup, and since it has a simple structure and can be miniaturized, it can be attached to a plurality of reaction vessels, so that the ion current distribution is measured. It becomes possible.

[Sixth Embodiment] In the previous embodiment, an example of measurement for a capacity transfer type plasma generating apparatus has been described. However, plasma is generated by an external circuit such as an induction type or ECR apparatus, and a high frequency electric field is used. In a plasma generating apparatus for extracting plasma, an ion current can be measured in a similar manner.

FIG. 8 is a sectional view showing a schematic configuration of an induction type plasma generating apparatus according to a sixth embodiment of the present invention. In FIG. 8, the same portions as those in FIG. 2 are denoted by the same reference numerals, and description thereof will be omitted.

As shown in FIG. 8, a disk-shaped electrode 82 is disposed in the reaction vessel 81 at a position facing the upper wall of the reaction vessel 81 in parallel. On the upper surface of the electrode 82, a substrate 29 to be processed such as a silicon wafer is arranged.
An antenna 84 is provided above the reaction vessel 81. The antenna 84 is supplied with high-frequency power from a matching circuit 85 and a high-frequency power source 86 having a frequency of 13.56 MHz. The high-frequency power supplied to the antenna 84 is introduced into the reaction vessel 81 by induction coupling, and generates plasma in the reaction vessel 81.

One end of an RF supply conductor 88 is connected to the lower surface of the electrode 82, and is connected to the ground potential via a high-frequency power supply 83 having an output frequency of 5 MHz. The high frequency power applied to the electrode 82 serves to draw the plasma generated in the reaction vessel 81 by the induction coupling into the substrate to be processed.

In this plasma generator, the plasma measurement probe 10 is embedded in the electrode 82 such that the opening faces toward the inside of the reaction vessel 81. Also,
The voltage waveform applied to both ends of the resistor 18 is a coaxial cable 33
Is connected to an A / D converter 34 such as an oscilloscope. In this plasma generation apparatus, since the plasma measurement probe 10 is embedded in the electrode 82 whose potential changes at a frequency of 5 MHz with respect to the ground potential, the A / D
The converter 34 is arranged so as to be floated from the ground potential. The data signal from the A / D converter 34 is transmitted to the data processing unit 3 through the optical fiber cable 87.
Sent to 5.

Also in the present apparatus, the data processing section 35 can obtain a voltage waveform composed of a steep electron current component that repeats every cycle and an almost constant ion current component. From this waveform, an ion current or an electron current can be obtained.

The present invention is not limited to the above embodiment, but can be implemented in various modifications without departing from the spirit of the invention.

[0062]

As described above, according to the present invention, a mechanism for shielding electrons such as a grid is not required, and the effect of losing ions due to collision with neutral particles can be ignored. To this extent, the collector can be brought close to the mesh, so that the ionic current and the electron current due to the collision between the ions and the neutral particles can be accurately measured.

Further, since a power supply device or the like for applying a potential to the grid is not required, the cost can be greatly reduced and the space can be significantly reduced.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a schematic configuration of a plasma measurement probe according to a first embodiment.

FIG. 2 is a cross-sectional view showing a schematic configuration of a plasma generation apparatus to which the plasma measurement probe shown in FIG. 1 is attached.

3 is a characteristic diagram showing a voltage waveform output from a plasma measurement probe 10 in the plasma generation device shown in FIG.

FIG. 4 is a sectional view showing a schematic configuration of a plasma measurement probe according to a second embodiment.

FIG. 5 is a sectional view showing a schematic configuration of a plasma measurement probe according to a third embodiment.

FIG. 6 is a sectional view showing a schematic configuration of a plasma generating apparatus according to a fourth embodiment.

FIG. 7 is a sectional view showing a schematic configuration of a plasma generating apparatus according to a fifth embodiment.

FIG. 8 is a sectional view showing a schematic configuration of an induction-type plasma generation apparatus according to a sixth embodiment.

FIG. 9 is a cross-sectional view showing a schematic configuration of a Faraday cup which is a conventional plasma measurement probe.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 ... Probe for plasma measurement 11 ... Conductor 12 ... Mesh 13 ... Conductive spacer 14 ... Insulating spacer 15 ... Collector 16 ... Insulating film 18 ... Resistance

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Etsuo Noda 1 Kosaka Toshiba-cho, Saiwai-ku, Kawasaki-shi, Kanagawa Prefecture Inside the Toshiba R & D Center (72) Inventor Tokuhisa Oiwa 8 Shinsugita-cho, Isogo-ku, Yokohama-shi, Kanagawa Address F-term in Toshiba Yokohama Office (reference) 5F004 CB01

Claims (6)

[Claims] A box-shaped conductor having an opening in at least a part of a surface facing the plasma; a conductive mesh provided in the opening of the conductor; and a space surrounded by the conductor and the mesh. A plasma measurement probe, comprising: a collector arranged and electrically separated from the conductor and the mesh; and a resistor connected to the collector. 2. A box-shaped conductor having an opening in at least a part of a surface facing the plasma; a conductive mesh provided in the opening of the conductor; and a space surrounded by the conductor and the mesh. A probe for plasma measurement, comprising: a collector disposed electrically and separated from the conductor and the mesh. 3. The probe according to claim 1, wherein a spacer is provided between the collector and the mesh to insulate and separate the collector and the mesh. 4. The plasma measurement probe according to claim 3, wherein a surface of the spacer which is in contact with the mesh is formed of a conductive material. 5. A box-shaped conductor provided with an opening in at least a part of a surface facing the plasma; a conductive mesh provided in the opening of the conductor; and a space surrounded by the conductor and the mesh. A plasma, comprising: a collector arranged and electrically separated from the conductor and the mesh; a resistor connected to the collector; and a voltage waveform measuring unit for measuring a voltage waveform applied to the resistor. Measuring device. 6. A process gas is supplied between a reaction vessel, a first electrode and a second electrode disposed in the reaction chamber and provided in parallel with each other, and between the first electrode and the second electrode. A plasma supply device for supplying a supply gas, and a power supply mechanism for generating a plasma of the process gas by discharge accompanying injection of high-frequency power between the two electrodes, wherein at least one of the surfaces facing the plasma is provided. A box-shaped conductor having an opening at a portion thereof, a conductive mesh provided at the opening of the conductor, and a space disposed between the conductor and the mesh, and electrically separated from the conductor and the mesh. A plasma measurement probe having a collector connected to the collector and a resistor connected to the collector, the plasma measurement probe being provided on the first electrode or the second electrode.