JP2000268769A - Ion implanter - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an ion implanter of a long life, high reliability at low cost, capable of conducting uniform ion implantation to a substrate in a three- dimensional shape. SOLUTION: This ion implantater implants ions into a substrate 10 by applying a voltage on the substrate 10 placed in a vacuum container 1 and by generating a discharge plasma in the vacuum container 1. The vacuum container 1 is evacuated to be vacuum inside thereof and supplied with a gas of a substance to be ion-implanted. The ion implanter comprises a step-up transformer 42 and a switching element 40 connected to the primary side of the step-up transformer 42.

Description

Description: BACKGROUND OF THE INVENTION [0001] The present invention relates to a piston,
For automotive parts such as bearings and cutting tools such as drills
Ion implanter for implanting ions into such substrates
Related. [0002] In the production of automobile parts and cutting tools,
By implanting ions into the substrate, such as a tool,
Attempts have been made to improve wear resistance, heat resistance, hardness, etc.
ing. For example, a chromium or
Is injected with nitrogen, or ion
When the film is formed by injecting the alloy, the abrasion resistance and fatigue life of the base are reduced.
It is known to be greatly improved. [0003] As a method of implanting ions into a substrate, implantation is performed.
The substrate in a discharge plasma containing positive ions of the substance
And apply a negative pulse voltage of several tens to several hundreds kV
A method has been proposed (references: JRConrad, et.a
l., "Plasma source ion-implantation technique for s
urface modification of materials ", J. Appl. Phys 62
(11), 1987, pp. 4591-4596). This ion implantation method uses P
SII (Plasma Source Ion Implantation) or PIII (P
lasma Immersion Ion Implantation)
Have been. [0004] Such a method is applied to a note drawn from an ion source.
Accelerate the incoming ions after passing through the deflection magnet for mass separation
The following is a comparison with the conventional method of injecting into the substrate.
Features. (A) When the substrate has a three-dimensional shape
Even from the plasma surrounding the substrate
Ion implantation can be performed almost perpendicular to the substrate surface,
Driving of substrate required by conventional method that cannot perform ion implantation
No mechanism is required and the injection time is short. (B) Long-distance beam transport is not required
The device configuration can be simple and inexpensive. [0007] The following is a drawing of a conventional PSII device.
It will be described with reference to FIG. This PSII device is, for example, rice
Similar to those described in the specification of National Patent No.
Things. FIG. 19 is a cross-sectional view of the PSII device, and FIG.
0 is a longitudinal sectional view of a PSII device, and FIG. 21 is a PSII device.
It is a perspective view of. In FIG. 19 to FIG. 21, the vacuum vessel 1 is
Surrounded by an upper plate 2, a lower plate 3 on the lower surface, and side plates 4 on the side surfaces.
It is a substantially cylindrical container. The bottom plate 3 has a gas source (not shown)
Gas inlet 5a for introducing a discharge gas into the vacuum vessel 1 from above
And a vacuum pump (not shown)
A vacuum exhaust port 6 for evacuating to a vacuum is provided.
On the outer walls of the upper plate 2 and the bottom plate 3, a plurality of square rod-shaped permanent magnets 7 are provided.
a and 7b are arranged parallel to each other. The permanent magnets 7a and 7b are connected to the upper plate 2 and
The magnet 7 is magnetized in a direction perpendicular to the outer wall of the bottom plate 3 and is adjacent to the magnet 7.
The polarities are different from each other. Further, the outer wall of the side plate 4 is also provided with a plurality of permanent magnets.
The stones 8 are vertically parallel to each other and
The stones 8 are arranged so that their polarities are different from each other. By disposing the permanent magnet in this manner,
The magnetic lines of force 20a, 20b covering the entire inner wall of the vacuum vessel 1;
20c is formed. Further, the top plate 2 and the bottom plate of the vacuum vessel 1
The top plate 2, bottom plate 3 and side plate 4 are used as anode
In contrast, a filament 9 serving as a cathode is provided.
You. Further, ions are implanted into the vacuum vessel 1.
Metal target for holding the target 10
The holding table 11 is connected to the vacuum vessel 1 via the bushing 12.
It is installed with potential insulation. Filler in vacuum vessel 1
A filament power supply for supplying power to the
2. Bottom plate 3 and side plate 4 as anode, filament 9 as cathode
Discharge power supply unit consisting of an arc power supply
The knit 13 is connected. High pressure on target 10
Pulse high voltage via cable 14 and bushing 12
A pulse-like high voltage is applied from the voltage source 15. The conventional PSII device having such a configuration
The operation will be described. That is, the gas inlet 5a
The gas of the substance you want to inject into the get 10 (nitrogen, oxygen, etc.)
And the filament of the discharge power supply unit 13
The filament 9 is energized by a power source and heated to generate
Thermoelectrons are preliminarily evacuated using the vacuum exhaust port 6.
The inside of the vacuum vessel 1 is filled. Discharge power supply unit
13, the filament 9 and the vacuum vessel 1
A discharge plasma 21 is generated during the discharge. Then, a target 10 for ion implantation is used.
The high-voltage power supply 1
5 is connected, and the vacuum capacity is independent of the plasma generation.
The pulse width is about several tens of microseconds,
Is applied with a negative pulse voltage of about tens to hundreds of kV.
You. Here, the application of voltage to the substrate 10 is several tens
The reason that the pulse is pulsed in a short time width of
A voltage is applied between the plasma and the substrate by applying a voltage to the target.
This is to prevent arc discharge from occurring. When a negative voltage is applied to the substrate, the substrate is removed.
A sheath grows in the surrounding plasma and electrons move away from the substrate.
The ion is accelerated toward the substrate,
Will be injected into the substrate. However, as described above,
Conventional devices such as
Since high-voltage elements such as vacuum tubes are used as elements,
Disadvantage of shortening the life of pulsed high-voltage power supply
was there. In addition, this has led to increased costs. Further, when an insulating film is formed on the substrate,
Pulse and negative pulse may be alternately repeated.
In this case, two power supplies, a positive pulse power supply and a negative pulse power supply
Need to be prepared, which will lead to increasing costs
Became. In the above method, the substrate is held.
Tang for generating discharge plasma in a vacuum vessel
There is a filament made of stainless steel etc.
Therefore, during discharge, the filament material evaporates,
It is inevitable that impurities other than the injected substance enter the plasma
Not. Then, impurities mixed in the discharge plasma
Exists as ions or neutral particles, which are
As a result of being adhered or injected onto the substrate surface
This will reduce the quality of the substrate. In addition, a discharge method using no filament
In some cases, RF waves and microwaves are used.
Are used as antennas to couple electromagnetic waves and plasma.
It is necessary to install a coil or a flat electrode in the vacuum container.
Therefore, the raw materials of the coil and plate electrode are mixed with the discharge plasma.
And the latter is generally large.
To generate discharge plasma when used in a plasma source
Requires large-scale magnetic field generating means such as an electromagnet. Therefore, one object of the present invention is to provide a three-dimensional shape
Uniform ion implantation is possible even for substrates with a long life
To provide a reliable, inexpensive ion implanter
And there. Another object of the present invention is to provide a three-dimensional shape.
Uniform ion implantation is possible even for the substrate,
Ion injection with less adhesion of impurities other than implanted substances to the substrate
An input device is provided. [0024] To achieve the above object,
Therefore, the ion implantation apparatus of the present invention applies a voltage to the substrate.
Means for boosting and the primary side of the transformer
A switching element for turning the voltage on and off
It is characterized by. Furthermore, as this switching element,
Semiconductors such as IGBT, thyristor, GTO, and triac
It is characterized by using a body individual element. According to the above configuration, the primary side of the step-up transformer
Use a high-voltage vacuum tube to turn the voltage on and off
It is no longer necessary to use IGB as a switching element.
Semiconductors such as T, thyristor, GTO, triac, etc.
The use of integrated elements greatly extends the life of the elements.
And configure the equipment at low cost
Can be. Also, the positive and negative pulses alternate.
When returning, the positive pulse voltage applied to the substrate
Can be generated using the ringing of
It is not necessary to have two pulse power supplies, and it can be configured at lower cost.
Can be In order to achieve the above object, the present invention
Of the ion implantation system, the vacuum container and the vacuum container are evacuated to a vacuum.
And means for supplying the raw material for discharge to the container
And a table for holding a substrate provided in the vacuum vessel,
A bushing for holding the table insulated from the vacuum vessel,
Apply a negative voltage to the substrate based on the potential of the vacuum vessel.
Bias power supply for applying voltage and plasma inside vacuum vessel
A plasma source for generating the plasma
Ion implantation to implant ions around the substrate
In the charging device, the vacuum vessel is provided with an insulator.
Discharge in the second plasma source
And extract the electrons from the plasma to produce the vacuum
Generates plasma surrounding the substrate in the vessel
And [0027] According to the above configuration, the vacuum vessel is provided.
Generate a second plasma in the plasma source and use it as a plasma source
A voltage where the installed electrode is the cathode and the vacuum vessel is the anode
The second plasma is supplied from
Electrons that are extracted from the second plasma
Collides with gas previously introduced into the vacuum vessel and
A single plasma is generated. Enclosure formed in vacuum vessel
Electrons extracted from the second plasma by the magnetic field
The generated plasma is confined in a vacuum vessel and
As the efficiency of plasma generation increases, uniform
Can be surrounded by zuma. In such a state, a bias power supply is applied to the substrate, for example.
For example, a pulsed negative voltage based on the potential of the vacuum
When applied, ions from the plasma are directed to the substrate.
Once accelerated and injected. In that case, install in a vacuum vessel
To generate the second plasma generated by the source
Because it is used as a cathode for
Source of filaments and coils in the plasma source that produces the
Even if the material is mixed as impurities,
The effect on the surrounding plasma is small and filaments and coils
Directly generate plasma surrounding the substrate
And the amount of impurities attached to the substrate
The injection volume can be much smaller. FIG. 1 shows a first embodiment of the present invention.
Schematic showing an example of such an ion implanter and its power supply configuration
It is a block diagram. The ion implantation apparatus of the present embodiment has a cylindrical shape.
Vacuum vessel 1 is provided. The vacuum vessel 1 is an upper plate on the upper surface.
2, a substantially cylindrical shape surrounded by a bottom plate 3 on the lower surface and a side plate 4 on the side surface
It is a container of a shape. The bottom plate 3 has a vacuum source from a gas source (not shown).
And a gas inlet 5a for introducing a discharge gas into the vessel 1
The inside of the vacuum vessel 1 is evacuated by a vacuum pump
A vacuum exhaust port 6 is provided for the purpose. Top plate 2 and bottom
A plurality of square bar-shaped permanent magnets 7a and 7b are alternately provided on the outer wall of the plate 3.
Are arranged in parallel. The permanent magnets 7a and 7b are connected to the upper plate 2 and
The magnet 7 is magnetized in a direction perpendicular to the outer wall of the bottom plate 3 and is adjacent to the magnet 7.
The polarities are different from each other. Furthermore, the side plate 4
On the outer wall, a plurality of permanent magnets 8 are vertically parallel to each other.
So that the polarities of adjacent magnets 8 are different from each other
It is arranged in. By arranging permanent magnets in this way,
As a result, a magnetic field line 20c covering the entire inner wall of the vacuum vessel 1 is formed.
It is. Further, the top plate 2 and the bottom plate 3 of the vacuum vessel 1 and
The side plate 4 has the top plate 2, the bottom plate 3, and the side plate 4 as anodes.
In contrast, a filament 9 serving as a cathode is provided.
Further, a target for ion implantation is provided in the vacuum vessel 1.
Target holding base 11 for holding the target 10
Is electrically insulated from the vacuum vessel 1 via the bushing 12.
It is arranged. The vacuum vessel 1 is passed through a filament 9.
A filament power supply 16 for supplying electricity, the top plate 2 and the bottom plate
3 and side plate 4 as anode and filament 9 as cathode
And an arc power supply 17 for generating arc discharge is connected.
You. The target 10 has a high-voltage cable 14 and
A negative high voltage pulse is applied via the bushing 12
You. The negative high voltage pulse causes the output of the DC power supply 41 to
Switching at T40 to cut out pulse waveform and boost
The voltage is increased to several tens of kV by the transformer 42 and the rectifier 43 is
Get through. 40A is the gate control of the IGBT 40.
Control circuit. IGBT is used as a switching element.
Is shown, but in addition to this, thyristor, G
TO, TRIAC, transistor, FET and many more
Devices are available. FIG. 2 shows the waveform of the high voltage pulse. FIG.
(A) of FIG. 2 shows that when a rectangular pulse is generated,
(B) shows an example in which a part of a sine wave pulse is generated.
You. Actual waveforms often have more broken waveforms.
No. According to the present embodiment described above, the step-up transformer
For the high voltage to turn on and off the voltage on the primary side of 42
It is no longer necessary to use vacuum tubes, etc.
IGBT40 or thyristor, GTO, try
By using semiconductor solid state devices such as ACK,
The service life can be greatly extended and the cost is reduced.
Thus, the device can be configured. Further, the positive pulse and the negative pulse are alternately repeated.
When returning, the positive pulse voltage applied to the substrate
Can be generated using ringing
It is not necessary to have two pulse power supplies,
Can be achieved. Next, a second embodiment will be described with reference to FIG.
Will be explained. In FIG. 3, the structure of the discharge unit is the same as that of FIG.
Since they are the same, the description is omitted. The method of generating a high voltage in this embodiment is directly
An AC power supply was used in place of the power supply 41. AC power supply
For example, a commercial power supply may be used, or a higher-frequency power supply may be used.
May be used. In FIG. 3, a pulse is applied using a triac.
Is used by cutting out a part of it, but using other elements
You may. FIG. 4 shows the waveform at that time. actually,
It is often obtained as a blunted waveform. According to the present embodiment, the first embodiment is different from the first embodiment.
Similar effects can be obtained. Next, a third embodiment will be described with reference to FIG.
Will be explained. In FIG. 5, the configuration of the discharge unit is the same as that of FIG.
Since they are the same, the description is omitted. The high-voltage generation method according to the present embodiment
A power supply was used. Use a commercial power supply as the AC power supply.
Alternatively, a higher frequency power supply may be used. AC source
Is subjected to half-wave rectification to obtain a pulse waveform. That
The waveform at that time is shown in FIG. According to the present embodiment, the first embodiment and the
Similar effects can be obtained. Next, a fourth embodiment will be described with reference to FIG.
Will be explained. In FIG. 7, the structure of the discharge unit is the same as that of FIG.
Since they are the same, the description is omitted. The height of this embodiment
The voltage generation method uses the ringing characteristics of the pulse transformer.
Is used to obtain a positive pulse.
Is the same. FIG. 8 shows the waveform at that time. Next, a fifth embodiment will be described with reference to FIG.
Will be explained. FIG. 9 shows the structure of the high-voltage pulse generator.
Since the configuration is the same as that of FIG. 1, the description is omitted. In this embodiment, the plasma generation method
An RF discharge was used instead of a DC discharge. In addition,
In addition to the high voltage pulse generation method,
3, may be combined with the method described in the fourth embodiment.
No. Also use microwave discharge instead of RF discharge
In that case, the high-voltage pulse generation method
Is shown in the second, third, and fourth embodiments in addition to the above.
It may be combined with the method. According to the present embodiment, the first embodiment is different from the first embodiment.
Similar effects can be obtained. FIG. 10 shows a second embodiment of the ion implantation apparatus according to the present invention.
It is sectional drawing which shows 6th Embodiment. In this embodiment,
The vacuum injection device includes a cylindrical vacuum vessel 1. vacuum
The polarity of adjacent magnets alternates around the outer circumference of the container 1.
The rectangular parallelepiped permanent magnets 7a, 7b, 8
From the lines of magnetic force as shown by 20a, 20b, 20c
Multi-line cusp confined magnetic field is formed
You. The inside of the vacuum vessel 1 has a base for implanting ions.
A target holder 11 for holding the body 10 is installed.
Have been. The base 10 was set on the bottom plate 3 of the vacuum vessel 1.
Pulse high voltage through bushing 12 and high voltage cable 14
It is connected to a voltage power supply 15. Gas is introduced into the side plate 4.
A port 5b is provided, and a vacuum exhaust port 6 is provided on the bottom plate 3.
You. A second plasma is generated on the upper plate 2 of the vacuum vessel 1.
A cylindrical plasma source 18 is provided for performing
A second plasma is provided between the second plasma source 18 and the vacuum vessel 1.
Multiple extraction holes for extracting electrons from the machine
Electrodes 19 separated by insulators 22
You. Gas is introduced into the upper part of the second plasma source 18.
A mouth 5a is provided, and a filament 9 is provided inside.
ing. In addition, the outer periphery of the second plasma source 18
A rectangular parallelepiped permanent magnet 7 so that the polarity of the stone alternates
c is installed and multi-line as shown in 20d
A cusp confinement magnetic field is formed. The filament 9 is heated.
A filament power supply 16 is connected to the
The container side for the container of the lament 9 and the second plasma source 18 is
For generating discharge with the anode and the filament 9 as the cathode
An arc power supply 17 is connected. Vacuum vessel 1 and second
The plasma source 18 has an anode in the vacuum vessel 1 and a second plasma.
A second arc power source 23 is connected such that the source 18 is a cathode.
Have been. Basics of the ion implantation apparatus as described above
The operation will be described. First, not illustrated using the vacuum exhaust port 6.
Vacuum chamber 1 and second plasma source
Evacuate 18 to vacuum. In that state, from the gas inlet 5a
The discharge gas is supplied to the second plasma source 18 and
The filament power supply 16 heats the filament 9
Thermions were emitted, and the filament 9 became sufficiently hot.
In this state, an arc voltage is supplied from the arc power supply 17. In such a procedure, the second plasma source 18
A discharge plasma is formed at the end. The generation of discharge plasma is
It can be either loose or continuous. Gas introduction
The discharge gas supplied from the port 5a was perforated in the electrode 19.
Since it is also supplied into the vacuum vessel 1 through the hole, the second
The pulsed voltage is supplied to the second plasma
By applying a second plasma to the source and the vacuum vessel 1
Electrons 47 in the plasma generated in the source are
Out of the vacuum vessel 1 and collides with the discharge gas.
A discharge plasma 21 surrounding the body 10 is formed. At this time, it is provided on the side plate 4 of the vacuum vessel 1.
Discharge gas is newly supplied from the supplied gas inlet 5b.
Good. In this state, a high-voltage cable is
The vacuum vessel 1 to the substrate 10 through the
On the other hand, a negative pulse voltage is applied. Discharge plasma 21
Is formed with an ion sheath surrounding the substrate,
The ions in the discharge plasma 21 are implanted uniformly from all directions.
It is. In this embodiment, the discharge lamp surrounding the base 10 is
Second plasma as cathode for generating plasma 21
Since the plasma generated in the source 18 is used,
In the second plasma source, the raw material of the filament 9 is
Even when mixed as impurities, the discharge plasma 2
1 has a small effect on the substrate 1 directly using a filament.
The conventional case of generating a discharge plasma 21 surrounding 0
In comparison, the amount of impurities deposited and injected into the substrate is much smaller
It is possible to cut. In the above embodiment, the second plasma source
Described when two were installed, but one or three or more
The same effect can be expected in the above case. Next, a seventh embodiment will be described. Figure
11 (a), FIG. 11 (b), FIG. 12 (a), FIG. 12 (b)
A portion in which only the portion of the second plasma source 18 is enlarged.
FIG. In the present embodiment, the second plasma source 18
RF or microwave band to generate electric plasma
Uses electromagnetic waves. FIG. 11 (a) shows a rectangular parallelepiped permanent magnet next to it.
The magnetic lines of force 2 are arranged such that the polarities of the matching magnets are different from each other.
Inside the container where the multi-cusp magnetic field as shown by 0d is formed
Has a built-in high-frequency coil 24, and a high-frequency oscillator and
High frequency power supply unit 25 composed of impedance matching device
Are connected. FIG. 11B shows both ends of the ceramic tube 26.
The end of which is sealed with metal flanges 27a and 27b
In the second plasma source 18, the high-frequency coil 24 is
Wrapped around the outer circumference of the tube 26,
Are connected. In each case, an electrode is located at the bottom of each container
19 are attached. Each of the high frequency coils 24 is a hollow pipe
Is formed into a spiral shape, and cooling water flows through the hollow part
It is a structure that can be done. In any case, gas inlet
From the high-frequency power supply unit 25
When the wave coil 24 is energized, a discharge plasma is formed.
Is done. FIG. 12 shows a second example using microwaves.
The case where plasma is generated is shown. (A) of FIG.
From an electromagnet power supply (not shown) to the pair of electromagnets 28 in the same direction
Applying current to form a mirror magnetic field, a microwave oscillator,
Isolators, circulators, stub tuners, etc.
From a microwave power supply unit 31 consisting of
For supplying the microwave 32 to the container through the vacuum window 29
The equation is shown. Further, FIG. 12B shows the case of FIG. 12A.
Without using such a vacuum window, the microwave antenna 33
It is a system built in the vessel. As described above, the second plasma is generated by using the electromagnetic waves.
When generating plasma in the source 18, a filament is used.
Reactive gas such as oxygen that cannot be used when
And easy continuous continuous operation.
There is a point. Next, an eighth embodiment will be described. Figure
13 (a) and FIG. 13 (b) show the operation of the discharge power source 13 and
It is a figure showing the time change of the applied negative pulse voltage. Figure
13 (a) shows the removal of the base by the discharge power supply unit 13.
While generating the surrounding discharge plasma 21 in a pulse shape,
Based on multiple negative pulsed rectangular voltages synchronized with the
It shows the case of applying to the body. As described above, the pulse generation of the plasma is performed.
With this, the temperature rise of the base 10 is suppressed while
The amount of implanted ions can be as large as possible
Becomes FIG. 13B shows the discharge power supply unit 1.
The discharge plasma 21 surrounding the substrate 10 is
While generating multiple positive pulses synchronized with each discharge pulse.
This shows a case where a sinusoidal pulse voltage is applied to the substrate.
You. By applying a sinusoidal pulse voltage,
While a positive voltage is applied to the
While the negative voltage is applied to the electrons from the
ON is injected into the substrate 10. Electrons are injected into the substrate 10
During this time, the electrons remove impurities adhering to the surface of the base 10.
The removal effect can be expected. Next, a ninth embodiment of the present invention will be described.
I do. FIG. 14 is an enlarged view of the mounting portion between the bushing 12 and the bottom plate 3.
FIG. In the present embodiment, the permanent magnet row 7b is
The magnets 7d and 7e installed on both sides of the bushing 12
Is a magnet whose magnetization direction is longer than the other magnets. With this arrangement, the bushing
The lines of magnetic force 20 b are formed so as to cover the
Discharge plasma 21 formed so as to surround
Can be prevented from spreading around the thing 12.
Wear. That is, when a high negative voltage is applied to the base 10,
Dielectric breakdown between bottom plate 3 and target holder 11
Can be expected to be effective. Next, a tenth embodiment of the present invention will be described.
I will tell. In the present embodiment, as shown in FIGS.
A cover that covers the cage bushing 12 and the vacuum exhaust port 6
33 were installed. With such an arrangement, the cover
Of the discharge gas from the vacuum vessel 1 to the vacuum exhaust port 6
Is blocked, reducing the gas pressure around the bushing 12.
The bushing 12
The frequency of edge destruction can be reduced. Next, an eleventh embodiment of the present invention will be described.
I will tell. FIG. 16 omits half the area of the entire ion implantation apparatus.
It is sectional drawing which was abbreviated and shown. In this embodiment, the vacuum vessel 1
A sample table 34 is provided in the inside, and an injection
A substance to be turned on or its compound 35 is placed. Ma
The sample table 34 corresponds to the vacuum container 1.
Table bias power supply 37 for biasing
Is connected. Further, the second plasma source 18 is a plasma source.
Insulate each other to extract electrons from the matrix and accelerate them
2 and the electrodes required therefor.
And a child drawer power supply 36. Basic operation in such an ion implantation apparatus
Explain the work. First, not shown using the vacuum exhaust port 6
Vacuum container 1 and second plasma source 1
Evacuate 8 to vacuum. In that state, release from the gas inlet 5a.
An electric gas is supplied to the second plasma source 18 and the
The filament 9 is heated by the
Electrons are emitted and the filament 9 is heated to a sufficiently high temperature.
The arc voltage is supplied from the arc power supply 17 in this state. In such a procedure, the second plasma source 18
A discharge plasma is formed at the end. Electronic drawer
A power source installed in the second plasma source 18 by the power source 36
A pulse-like voltage of about several kV to 10 kV is applied between the poles 19.
Applying pressure and shaping the electrons 23 from the discharge plasma into a beam
And draw it out into the vacuum container 1. The discharge plasma is generated in a pulsed or
Both stationary and continuous modes are possible. Withdrawn electrons 2
3 is shaped like a beam and goes straight because it is accelerated,
The sample table provided on the opposite surface of the second plasma source 18
Substance or its material to be implanted ions placed on the cable 34
Or a substance that collides with the compound 35 and becomes an implanted ion.
Compound 35 is vaporized. In this case, the electronic drawer power supply 36
Stop supplying the voltage in the form of a rus, and continue to use the second arc power supply.
23, the pulsed voltage is applied to the second plasma source and
By applying to the container 1, the plasma is generated in the second plasma source.
Electrons 23 in the formed plasma are evacuated from the hole of electrode 19.
It is drawn into the container 1 and becomes a discharge gas and implanted ions.
The substance or its compound vapor collides with the mixed gas to form a base.
A discharge plasma 21 surrounding the body 10 is formed. this
In the state, the high voltage cable 14
Negative through the bushing to the substrate 10 relative to the vacuum vessel 1
Apply pulse voltage. The discharge plasma 21 has a substrate.
A surrounding ion sheath is formed on the substrate 10 from all directions.
The ions in the discharge plasma 21 are uniformly implanted. In this embodiment, the second plasma source 18
Insulates each other via insulator 22 to extract and accelerate electrons
The electrode 19 and the electron extraction power supply 36 separated by
A sample table 34 is provided on the surface facing the second plasma source 18.
Provided and withdrawn from the second plasma source 18
The electrons 23 are combined with the implanted ions placed on the sample table 34.
Vaporized by collision with the substance or its compound 35
Injection of a solid or low vapor pressure substance at room temperature
It can be used as an application. The substance or the substance to be the discharge gas and the implanted ions
The vapor of the compound collides with the mixed gas to remove the substrate 10.
A surrounding discharge plasma 21 is formed, and their ion components are formed.
Implanted ions and the substrate 10
Interaction forms a new structure coating on the substrate surface
Could be achieved. The discharge supplied from the gas inlet 5a
The gas is also supplied to the inside of the vacuum vessel 1 through the hole formed in the electrode 19.
Discharge gas from the second plasma source 18
If you do not want to mix in the ions implanted into the substrate 10,
Near the connection between the plasma source 18 and the upper plate 2
A new vacuum exhaust port 6 for the second plasma source 1
8 to reduce the conductance between the vacuum vessel 1 and
A baffle plate or the like may be provided. A substance to be implanted ions or a compound thereof
If you want to mix the discharge gas positively with the steam of 35
Gas supplied from the gas inlet 5a through the inlet 5b
When the same gas or different gas is supplied into the vacuum vessel 1,
Just do it. Further, it is pulled out from the second plasma source 18.
Substance that becomes high-energy electrons 23 as implanted ions or
When the compound 35 collides with the compound 35 and evaporates, and
Discharge is generated in the vacuum vessel 1 using the arc power source 23.
When the sample table is biased by the sample table bias power supply 37,
Cable 34 has a positive or negative bias with respect to the vacuum vessel 1.
Charge in the discharge plasma 21 by applying a voltage
Substance or compound 3 in which particles are accelerated to become implanted ions
Substance or its compound that becomes an implanted ion due to collision with 5
It is also possible to further promote the vaporization of 35. this
If the electrons are charged particles, the positive bias
If the ions are charged particles, use the negative power supply
Negative bias. FIGS. 17A and 17B show a twelfth embodiment of the present invention.
Only the sample table part of the ion implanter according to the embodiment
FIG. 3 is an enlarged sectional view. FIG. 17A shows a sample table.
Substance or its compound 35 to be implanted ions on the cable 34
For generating discharge plasma 21 by evaporating gas
FIG. 4 is a diagram schematically illustrating an arrangement of a table 34. Meanwhile, the figure
17 (b) shows a discharge plasma 2 consisting of only a discharge gas component.
The outline of the arrangement of the sample table 34 when it is desired to generate
FIG. In the present embodiment, the sample table 34 is
It is movable in the direction, and the side plate 4 of the vacuum vessel 1 is movable.
A type sample table protection plate 38 is provided. FIG.
Lower the sample table 34 to the vicinity of the bottom plate 3 as shown in FIG.
The sample plate with the magnetic field lines 20b of the multi-cusp magnetic field of the bottom plate 3.
Cover the cable 34 and test it with the sample table protection plate 38.
By covering the upper surface of the charging table 34,
Of ions injected by collision or radiation of charged particles from
Substance or its compound 35 can be suppressed from being vaporized.
It works. With such a configuration, a vacuum
Whether only the discharge gas component without breaking the vacuum state in the container 1
Discharge plasma 21 is generated and injected into the substrate 10.
You can enter. According to such a method, only the discharge gas component
Ion implantation into the base 10 by using
Alternately with the ion implantation by the substance or the component of the compound 35
The implanted ions alternately stack
To form a film having a new structure on the surface of the substrate 10.
There is a potential. FIG. 18 shows a thirteenth embodiment of the present invention.
FIG. 2 is a cross-sectional view of an ion implantation apparatus. In the present embodiment, FIG.
0 in the ion implantation apparatus of the sixth embodiment shown in FIG.
The high-voltage power supply 15 is a power supply according to the first embodiment shown in FIG.
This is an example in which 15 ′ is substituted. That is, the ion
High-voltage power supply 15 'in the
Source 41, switching element 40, step-up transformer 42
And a rectifier 43. According to the present embodiment, in the first embodiment,
The advantage is that the device life can be greatly extended.
In both cases, the apparatus can be made inexpensive, and in the sixth embodiment,
Filament material in the second plasma source
Discharge surrounding the substrate even if the quality is mixed as impurities
The effect on the plasma is small, and the adhesion and
The amount can be made much smaller. In the above example, the first embodiment and the sixth embodiment
Although the combination with the embodiment has been described, the present invention is not limited to this.
Any one of the first to fifth embodiments and the sixth embodiment
It may be a combination with any of the twelfth embodiments.
No. As described in detail above, according to the present invention,
As means for applying a voltage to the body, a step-up transformer and
Switch on / off voltage on the primary side of the transformer
The use of a vacuum tube for high voltage
It is no longer necessary to use IGB as a switching element.
Semiconductors such as T, thyristor, GTO, triac, etc.
Element life can be greatly extended
The device can be reduced, and the device can be made inexpensive. Yo
By implementing the present invention, high reliability and long life
It is possible to provide an inexpensive ion implanter.
You. Further, according to the present invention, the discharge
Second plasma as cathode for generating electroplasma
Because the plasma generated in the source is used,
Filament material in the second plasma source
To the discharge plasma surrounding the substrate
The effect is small, and the amount of impurities attached to the substrate
Can be made smaller.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing an example of an ion implantation apparatus according to the present invention. FIG. 2 is a diagram showing a waveform of a high voltage pulse. FIG. 3 is a schematic diagram of an ion implantation apparatus according to a second embodiment of the present invention. FIG. 4 is a diagram showing a waveform of a high-voltage pulse according to a second embodiment of the present invention. FIG. 5 is a schematic view of an ion implantation apparatus according to a third embodiment of the present invention. FIG. 6 is a diagram showing a waveform of a high-voltage pulse according to a third embodiment of the present invention. FIG. 7 is a schematic diagram of an ion implantation apparatus according to a fourth embodiment of the present invention. FIG. 8 is a diagram showing a waveform of a high-voltage pulse according to a fourth embodiment of the present invention. FIG. 9 is a schematic view of an ion implantation apparatus according to a fifth embodiment of the present invention. FIG. 10 is a sectional view showing an example of an ion implantation apparatus according to a sixth embodiment of the present invention. FIG. 11 is an enlarged partial view of only a portion of a second plasma source using an RF band electromagnetic wave in the ion implantation apparatus according to the sixth embodiment of the present invention. FIG. 12 is an enlarged partial view of only a second plasma source using an electromagnetic wave in a microwave band in an ion implantation apparatus according to a seventh embodiment of the present invention. FIG. 13 is a diagram showing an operation of a discharge power supply of an ion implantation apparatus according to an eighth embodiment of the present invention and a temporal change of a negative pulse voltage applied to a base. FIG. 14 is an enlarged partial view of a mounting portion of a bushing and a bottom plate of an ion implantation apparatus according to a ninth embodiment of the present invention. FIG. 15 is an enlarged partial view of a mounting portion of a bushing and a bottom plate of an ion implantation apparatus according to a tenth embodiment of the present invention. FIG. 16 is a cross-sectional view omitting a half region of the entire ion implantation apparatus according to an eleventh embodiment of the present invention. FIG. 17 is an enlarged sectional view showing only a sample table portion of an ion implantation apparatus according to a twelfth embodiment of the present invention. FIG. 18 is a sectional view of an ion implantation apparatus according to a thirteenth embodiment of the present invention. FIG. 19 is a cross-sectional view of a conventional ion implantation apparatus viewed from the front. FIG. 20 is a cross-sectional view of a conventional ion implantation apparatus viewed from above. FIG. 21 is a perspective view of a conventional ion implantation apparatus. [Description of Signs] 1 ... Vacuum container, 2 ... Top plate, 3 ... Bottom plate, 4 ... Side plate, 5a,
5b: gas inlet, 6: vacuum exhaust port, 7a, 7b, 7
c, 7d, 7e, 8: permanent magnet, 9: filament, 1
0: Base, 11: Target holder, 12: Bushing, 13: Discharge power supply unit, 14: High voltage cable, 1
5 high-voltage DC power supply, 15 'pulse high-voltage power supply 16 filament power supply, 17 arc power supply, 18 second plasma source, 19 power supply, 20 magnetic lines of force, 21 discharge plasma, 22 insulator 23 ... second arc power supply,
24 high frequency coil, 25 high frequency power supply unit, 26
... Ceramic tube, 27a, 27b ... Flange, 28 ... Electromagnet, 29 ... Vacuum window, 30 ... Waveguide, 31 ... Microwave power supply unit, 32 ... Microwave, 33 ... Cover, 34
... Sample table, 35: Substance or compound thereof to be implanted ions, 36: Electron extraction power supply, 37: Sample table bias power, 38: Sample table protection plate, 40: Semiconductor switching element, 41: DC power supply, 42: Step-up transformer , 43 ... rectifier, 44 ... AC power supply, 45 ... rectifier,
46 ... Vacuum tube

   ────────────────────────────────────────────────── ─── Continuation of front page    (72) Inventor Toru Sugawara             No. 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki-shi, Kanagawa             Toshiba R & D Center F term (reference) 4K029 CA10 DA00 DE01                 5C034 CC07 CC19

Claims (1)

Claims: 1. A voltage is applied to a substrate in a state where the inside is evacuated to a vacuum and the substrate is placed in a vacuum container supplied with a gas or a rare gas containing a substance to be ion-implanted. An ion implantation apparatus for injecting ions into the substrate by applying discharge and generating discharge plasma in the vacuum vessel, comprising: a step-up transformer; and a switching element connected to a primary side of the transformer. Characteristic ion implanter. 2. A voltage is applied to the substrate in a state where the inside is evacuated to a vacuum and the substrate is placed in a vacuum container supplied with a gas or a rare gas containing a substance to be ion-implanted. In an ion implantation apparatus for implanting ions into the substrate by generating discharge plasma therein, a means for applying a voltage to the substrate includes a step-up transformer and an AC power supply connected to a primary side of the transformer. And a rectifying element for rectifying the AC power supply. 3. The means for applying a voltage to the substrate,
3. The ion implantation apparatus according to claim 1, further comprising means for repeatedly generating a negative pulse voltage. 4. The means for applying a voltage to the substrate,
3. The ion implantation apparatus according to claim 1, further comprising means for alternately and repeatedly generating a positive pulse voltage and a negative pulse voltage. 5. The ion implantation apparatus according to claim 4, wherein
An ion implantation apparatus, wherein the pulse width of the negative pulse voltage is wider than the pulse width of the positive pulse voltage. 6. The ion implantation apparatus according to claim 3, wherein the negative pulse voltage applied to the base has a rectangular wave or a pulse waveform close to a rectangular wave. 7. The ion according to claim 3, wherein the negative pulse voltage applied to the substrate has a sine wave or a pulse waveform obtained by cutting out a part of the sine wave. Infusion device. 8. The means for applying a voltage to the substrate,
6. The ion implantation apparatus according to claim 4, further comprising means for generating a positive pulse voltage to be applied to the base using ringing of a transformer. 9. A voltage is applied to the substrate in a state where the inside is evacuated to a vacuum and the substrate is placed in a vacuum container supplied with a gas of a substance to be ion-implanted. An ion implanter for injecting ions into the substrate by generating discharge plasma with the first plasma source, further comprising a second plasma source provided in the vacuum vessel via an insulator; An ion implantation apparatus, wherein a discharge is generated in a plasma source to generate plasma, and electrons are extracted from the plasma to generate plasma surrounding the substrate. 10. The apparatus according to claim 9, wherein at least one of said vacuum vessel and said second plasma source comprises a magnetic field forming means for confining generated plasma.
An ion implanter according to any one of the preceding claims. 11. An ion implantation apparatus according to claim 9, wherein said means for applying a voltage to said substrate includes means for generating a negative pulse voltage synchronized with plasma generation in said first plasma source. . 12. The apparatus according to claim 1, wherein said means for applying a voltage to said substrate includes means for generating a negative pulse voltage and a positive pulse voltage synchronized with plasma generation in said first plasma source. 10. The ion implanter according to 9. 13. The apparatus according to claim 9, further comprising a table for holding said base, a bushing for holding said table insulated from said vacuum vessel, and a magnetic field forming means surrounding said bushing. Ion implanter. 14. The ion implantation apparatus according to claim 13, further comprising a cover for covering the bushing and a periphery of a vacuum exhaust port of the vacuum vessel. 15. The second plasma source includes an electrode and a power source separated from each other via an insulator to extract charged particles from the second plasma and accelerate the charged particles. 10. The ion implantation apparatus according to claim 9, wherein the charged particles extracted from the apparatus collide with a substance placed on a sample table provided in a vacuum vessel and are vaporized. 16. The ion implantation apparatus according to claim 15, wherein said charged particles are electrons, and said power source is a positive electrode for accelerating said electrons. 17. The ion implantation apparatus according to claim 15, wherein said charged particles are ions, and said power source is a negative electrode for accelerating said ions. 18. The ion implantation apparatus according to claim 15, further comprising a power supply for applying a voltage between said sample table and said vacuum vessel. 19. The method according to claim 19, wherein a vapor generated by colliding electrons drawn from said second plasma with a substance placed on said sample table and a gas previously introduced into said vacuum vessel are mixed. 10. The ion implantation apparatus according to claim 9, further comprising: means for generating a plasma by a power supply and applying a negative pulse voltage to the substrate in the plasma in the gas mixture to implant ions. 20. A plasma generated by the discharge power supply under a vapor generated by colliding electrons drawn from the second plasma with a substance placed on the sample table and applying a negative pulse voltage to the substrate. 10. A method according to claim 9, further comprising the step of alternately performing ion implantation by introducing a gas into the vacuum vessel to generate plasma and applying a negative pulse voltage to the substrate. An ion implanter according to any one of the preceding claims. 21. A voltage is applied to the substrate in a state where the inside is evacuated to a vacuum and the substrate is placed in a vacuum container to which a gas of a substance to be ion-implanted is supplied. In the ion implantation apparatus for injecting ions into the substrate by generating discharge plasma by the first plasma source, the means for applying a voltage to the substrate includes a step-up transformer and a primary side of the transformer. A switching element connected to the vacuum vessel, comprising a second plasma source provided in the vacuum vessel via an insulator, generating a plasma in the second plasma source to generate plasma, and extracting electrons from the plasma. An ion implanter for generating plasma surrounding the substrate.