JP2000264438A - Wafer conveying device - Google Patents

Wafer conveying device

Info

Publication number
JP2000264438A
JP2000264438A JP11111258A JP11125899A JP2000264438A JP 2000264438 A JP2000264438 A JP 2000264438A JP 11111258 A JP11111258 A JP 11111258A JP 11125899 A JP11125899 A JP 11125899A JP 2000264438 A JP2000264438 A JP 2000264438A
Authority
JP
Japan
Prior art keywords
transfer
plate
wafer
chamber
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11111258A
Other languages
Japanese (ja)
Inventor
Yoshio Moronuki
吉雄 諸貫
Masami Kanegae
正巳 鐘ケ江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RIBAABERU KK
Original Assignee
RIBAABERU KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RIBAABERU KK filed Critical RIBAABERU KK
Priority to JP11111258A priority Critical patent/JP2000264438A/en
Publication of JP2000264438A publication Critical patent/JP2000264438A/en
Pending legal-status Critical Current

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Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Automatic Assembly (AREA)
  • Warehouses Or Storage Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To smoothly convey a conductor wafer and to easily deliver the same, without deteriorating a surface and contaminating the same with particles by providing a conveying chamber with a means for supplying an inert gas to the lower surface of a conveying plate for floating the conveying plate, and a means for moving the floated conveying plate. SOLUTION: A conveying chamber 12 is provided with a plurality of grooves 8, and Ar 14 as inert gas is introduced into these grooves 8 through a valve 11 whereby a conveying plate receives the bouyancy capable of balancing a product of the total area of the grooves 8 multiplied by the pressure of Ar 14 and a weight of a conveying plate 4, from its lower part to be floated. Then a linear motor comprising a rotor 3 and a stator 9 is driven, and the floated conveying plate 4 is conveyed in a non-contact state with the conveying chamber 12. At this time, the pressure of Ar 13 and an exhausting speed of a pump are adjusted to keep a clearance 7 between the lower surface of the floated conveying plate 4 and an upper surface of the conveying chamber 12 below a desired value. To prevent a large amoung of Ar 14 from leaking into the conveying chamber 12 through the clearance 7, a pure iron plate 2 is buried on a lower surface central part of the conveying plate 4.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明はウエーハ搬送装置に
関し、詳しくは、例えばエッチング装置やCVD装置な
ど、多くの処理装置を用いて各種処理を行う半導体装置
の生産ラインにおいて、半導体ウエーハ表面の変質、汚
染あるいはパーテイクルの付着など各種障害を効果的に
防止して、半導体ウエーハを真空、大気若しくは所望気
体雰囲気中で搬送することができるウエーハ搬送装置に
関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer transfer apparatus, and more particularly, to a semiconductor wafer production line for performing various processes using many processing apparatuses such as an etching apparatus and a CVD apparatus. The present invention relates to a wafer transfer device that can effectively prevent various obstacles such as contamination or particle adhesion and transfer a semiconductor wafer in a vacuum, air, or a desired gas atmosphere.

【0002】[0002]

【従来の技術】周知のように、従来の半導体装置の生産
ラインにおいては、ミニエンバイアロメントと呼ばれる
容器内に半導体ウエーハを入れ、この容器内を乾燥空気
または窒素雰囲気とした後、人手または搬送ロボットに
よって各処理装置間の搬送を行っていた。
2. Description of the Related Art As is well known, in a conventional semiconductor device production line, a semiconductor wafer is put in a container called a mini-environment, and the inside of the container is made to have a dry air or nitrogen atmosphere. The transfer between the processing apparatuses was performed by the transfer robot.

【0003】しかし、半導体ウエーハはカセット単位で
各種処理が行われるため、半導体ウエーハが大気に曝さ
れる時間が長く、そのため半導体ウエーハの表面の酸化
や窒化、あるいは有機物や各種パーテイクルの付着な
ど、劣化や汚染などの障害が起こりやすい。そのため、
次の処理装置内に半導体ウエーハを入れる際に、半導体
ウエーハの表面をクリーニングして清浄化する必要があ
り、スループットが低下して半導体装置のさらなる微細
化の障害になっていた。
However, since various processes are performed on a semiconductor wafer in a cassette unit, the semiconductor wafer is exposed to the air for a long time, so that the surface of the semiconductor wafer is deteriorated by oxidation or nitridation, or adhesion of organic substances or various particles. And obstacles such as pollution are likely to occur. for that reason,
When a semiconductor wafer is placed in the next processing apparatus, it is necessary to clean and clean the surface of the semiconductor wafer, and the throughput has been reduced, which has been an obstacle to further miniaturization of the semiconductor device.

【0004】この問題を解決するため、半導体ウエー
ハが搭載された搬送板を磁気浮上させ、リニアモータを
用いて真空内を搬送する、磁気浮上させた搬送板を磁
気力によって搬送する、および複数の処理をクラスタ
と呼ばれるチャンバ内で行い、このクラスタを複数個接
続する(マルチチャンバ方式)という三つの方法が提案
されている。
In order to solve this problem, a carrier plate on which a semiconductor wafer is mounted is magnetically levitated, and is conveyed in a vacuum using a linear motor; the magnetically levitated carrier plate is conveyed by magnetic force; Three methods have been proposed in which processing is performed in a chamber called a cluster, and a plurality of such clusters are connected (multi-chamber system).

【0005】[0005]

【発明が解決しようとする課題】しかし、上記方法お
よびはいずれも搬送板の磁気浮上を行っているため、
大電流が必要な電磁石を搬送路に沿って配置する必要が
ある。そのため、装置が大型化するばかりでなく、半導
体ウエーハの取り出し、方向変換、昇降,待機およびウ
エーハ番号の認識などを行うための各種機構を取り付け
るのが困難であった。
However, since both of the above methods and the above methods perform magnetic levitation of the carrier plate,
It is necessary to arrange an electromagnet requiring a large current along the transport path. Therefore, it has been difficult not only to increase the size of the apparatus, but also to attach various mechanisms for taking out the semiconductor wafer, changing directions, moving up and down, waiting, and recognizing the wafer number.

【0006】しかも、上記方法では、リニアモータお
よびモータの発熱によって放出ガスが発生するばかりで
なく、周辺の温度が上昇して各部品が熱膨張するので、
搬送板の下面と搬送室の上面との間の隙間を一定に保つ
ことができず、搬送板の浮上と搬送を良好に行うことは
困難であった。上記方法では、搬送板の位置や姿勢を
検出して、電磁力によってこれらを制御するための機構
が複雑で信頼性が低い。さらに、磁気力によって搬送板
の浮上や搬送を行うためには、電磁石と真空容器間の壁
を薄くする必要があり、その結果、真空の二重容器が必
要になってコストが上昇してしまう。
In addition, in the above method, not only the linear motor and the heat generated by the motor generate outgas, but also the surrounding temperature rises and each component thermally expands.
The gap between the lower surface of the transfer plate and the upper surface of the transfer chamber could not be kept constant, and it was difficult to satisfactorily lift and transfer the transfer plate. In the above method, a mechanism for detecting the position and orientation of the transport plate and controlling them by an electromagnetic force is complicated and has low reliability. Further, in order to lift and transfer the transfer plate by magnetic force, it is necessary to make the wall between the electromagnet and the vacuum container thin, and as a result, a vacuum double container is required and the cost increases. .

【0007】また、上記方法はプロセスの変化に対す
る柔軟性が低く、たとえばプロセスが変更された場合に
それに対応して処理室を追加するのが困難であるなど、
いずれも多くの問題があり、実用化されるには至ってい
ない。
In addition, the above method has low flexibility to process changes, for example, it is difficult to add a processing chamber when the process is changed.
Both have many problems and have not been put to practical use.

【0008】本発明の第1の目的は、従来の技術の有す
る上記問題を解決し、表面の劣化やパーテイクルの吸着
による汚染などの障害なしに、半導体ウエーハを所望方
向へ移動して、各種処理装置および大気中などへの受け
渡しを、容易に行うことができるウエーハ搬送装置を提
供することである。
A first object of the present invention is to solve the above-mentioned problems of the prior art and to carry out various processes by moving a semiconductor wafer in a desired direction without obstruction such as surface deterioration or contamination due to adsorption of particles. An object of the present invention is to provide a wafer transfer device that can easily transfer the device to the atmosphere and the like.

【0009】本発明の第2の目的は、半導体ウエーハの
各方向への移動、ウエーハの所在の検出若しくは空にな
った搬送板の待機または保管などを、複雑あるいは大型
の機構なしに行うことができる、低価格のウエーハ搬送
装置を提供することである。
A second object of the present invention is to move a semiconductor wafer in each direction, detect the location of a wafer, or wait or store an empty carrier plate without a complicated or large-sized mechanism. It is an object of the present invention to provide a low-cost wafer transfer device capable of performing such a process.

【0010】[0010]

【課題を解決するための手段】上記問題を解決するため
の本発明のウエーハ搬送装置は、半導体ウエーハが搭載
された搬送板を所望の場所や各種処理装置などへ搬送す
るための搬送室を具備し、当該搬送室は上記搬送板の下
面に不活性ガスを供給して上記搬送板を浮上させる手段
および浮上した上記搬送板を移動させる手段を有してい
ることを特徴とする。半導体装置の製造ラインは多くの
各種処理装置を含んでいるので、上記搬送室は、各処理
装置の間の搬送板の搬送や処理装置からの取り出しなど
に好適である。
A wafer transfer apparatus according to the present invention for solving the above problems has a transfer chamber for transferring a transfer plate on which a semiconductor wafer is mounted to a desired place or various processing apparatuses. The transfer chamber has a means for supplying an inert gas to the lower surface of the transfer plate to float the transfer plate and a means for moving the lifted transfer plate. Since the semiconductor device manufacturing line includes many various processing apparatuses, the transfer chamber is suitable for transferring a transfer plate between the processing apparatuses and removing the transfer plate from the processing apparatuses.

【0011】すなわち、本発明においては、処理すべき
半導体ウエーハが搭載された搬送板は、たとえばAr
(アルゴン)など適当な不活性ガスを、上記搬送板の下
面から上方へ吹き出すことによって浮上され、浮上され
た搬送板は搬送室とは非接触で搬送される。
That is, in the present invention, the carrier plate on which the semiconductor wafer to be processed is mounted is, for example, Ar
A suitable inert gas such as (argon) is blown upward from the lower surface of the transfer plate to float, and the lifted transfer plate is transferred without contact with the transfer chamber.

【0012】上記従来技術では、真空中で搬送板が磁気
浮上されるため、リニアモータの作動によって生じた熱
は外部に拡散せず、そのため周囲の部品が温度上昇によ
って膨張するのは避けられず、搬送板の下面と搬送室の
上面との間の隙間が変動して、搬送板を良好に浮上およ
び搬送するのは困難であった。
In the above prior art, since the transfer plate is magnetically levitated in a vacuum, the heat generated by the operation of the linear motor does not diffuse to the outside, so that it is inevitable that the surrounding parts expand due to a rise in temperature. In addition, the gap between the lower surface of the transfer plate and the upper surface of the transfer chamber fluctuates, making it difficult to float and transfer the transfer plate satisfactorily.

【0013】しかし、本発明では、磁気浮上ではなく、
不活性ガスの下部からの吹き上げによって搬送板の浮上
が行われる。そのため、上記リニアモータなどから発生
した熱は、上記不活性ガスを介して容易に外部に放散さ
れ、放出ガスの発生や周辺部品の熱膨張は効果的に防止
される。したがって、搬送板の下面と搬送室の上面との
間の隙間は所望の値に保持されて、搬送板の浮上および
搬送は極めて容易に行われ、上記従来方法の問題は解
決される。また、浮上した搬送板の移動に磁気力を用い
ていないので、搬送板の位置の検出などに複雑で大型の
装置は不要であり、上記従来方法の問題が生ずること
はない。さらに、搬送板の浮上および搬送などを行う手
段は、各搬送室ごとにそれぞれ設けられるので、プロセ
スの変動によく追従することができ、上記従来方法の
問題も解決される。
However, in the present invention, instead of magnetic levitation,
The carrier plate is lifted by blowing up the inert gas from below. Therefore, heat generated from the linear motor or the like is easily dissipated to the outside via the inert gas, and generation of the released gas and thermal expansion of peripheral components are effectively prevented. Therefore, the gap between the lower surface of the transport plate and the upper surface of the transport chamber is maintained at a desired value, and the floating and transport of the transport plate are performed very easily, and the problem of the conventional method is solved. Further, since no magnetic force is used to move the lifted transport plate, a complicated and large-sized device is not required for detecting the position of the transport plate, and the problem of the above-described conventional method does not occur. Further, since means for floating and conveying the transfer plate are provided for each transfer chamber, they can follow the process variation well, and the problem of the above-mentioned conventional method is solved.

【0014】上記浮上した搬送板を移動させる手段とし
ては、搬送板の搬送を搬送室と非接触で行うことができ
るリニアモータが実用上好ましい。リニアモータの作動
にとなって熱が発生するが、発生した熱は、上記のよう
に導入された不活性ガスを介して外部へ放散されるので
問題はない。
As a means for moving the above-mentioned transporting plate, a linear motor capable of transporting the transporting plate without contact with the transporting chamber is practically preferable. Although heat is generated by the operation of the linear motor, there is no problem because the generated heat is radiated to the outside through the inert gas introduced as described above.

【0015】上記不活性ガスを導入あるいは供給するに
はいくつかの態様が可能であるが、搬送室に設けた複数
の溝を介して導入あるいは供給を行うのが実用上最も好
ましい。これら溝の大きさ、形状あるいは数などを適宜
調節することによって、上記搬送板の浮上を良好に行う
ことができる。これらの溝は、搬送板が搬送される方向
に配置することができるが、搬送板の浮上を良好に行う
ために他の方向に配置してもよい。
There are several modes for introducing or supplying the above-mentioned inert gas. However, it is most practically preferable to introduce or supply the inert gas through a plurality of grooves provided in the transfer chamber. By appropriately adjusting the size, shape, or number of these grooves, the carrier plate can be floated satisfactorily. These grooves can be arranged in the direction in which the conveying plate is conveyed, but may be arranged in other directions in order to facilitate the floating of the conveying plate.

【0016】上記不活性ガスの圧力を所望の値に制御す
る手段を具備することによって、搬送板と搬送室の間の
間隔を所望の値に制御して、搬送板の搬送を極めて良好
に行うことができる。また、上記不活性ガスの導入によ
る搬送板の浮上と搬送を支障なく行うためには、搬送室
内を排気して減圧する手段を有していることが好まし
い。
By providing a means for controlling the pressure of the inert gas to a desired value, the distance between the transfer plate and the transfer chamber is controlled to a desired value, and the transfer of the transfer plate is performed extremely well. be able to. Further, in order to carry out the floating and transport of the transport plate by introducing the inert gas without any trouble, it is preferable to have a means for evacuating the transport chamber to reduce the pressure.

【0017】上記溝内への上記不活性ガスの導入を制御
するための弁を、上記搬送室に設けることにより、溝内
への不活性ガスの導入および停止をこの弁を用いて容易
に行うことができる。この弁の上端部に磁石を配置し、
かつ、上記搬送板の下面の所定の位置には磁性体の板を
埋設させることができる。このようにすると、この磁性
体の板が弁の上方に来ると、磁石が吸引されて弁が上昇
して弁が開き、不活性ガスが溝内に導入される。搬送板
が移動して磁性体の板が磁石の上方の位置から離れる
と、磁石が吸引されなくなるので、弁は下降して弁が閉
じた状態になり、不活性ガスの導入は停止する。すなわ
ち、搬送板が弁の上方にあるときのみに不活性ガスの供
給が行われ、その他のときは供給されない。搬送板の露
出された下面と磁性体の板の下面は平坦になるように形
成される。
By providing a valve for controlling the introduction of the inert gas into the groove in the transfer chamber, the introduction and the stop of the inert gas into the groove can be easily performed using this valve. be able to. Place a magnet at the top of this valve,
In addition, a magnetic plate can be embedded at a predetermined position on the lower surface of the transport plate. In this case, when the plate of the magnetic material comes above the valve, the magnet is attracted, the valve rises, the valve opens, and the inert gas is introduced into the groove. When the carrier plate moves and the magnetic plate moves away from the position above the magnet, the magnet is not attracted, so that the valve is lowered and the valve is closed, and the introduction of the inert gas is stopped. That is, the supply of the inert gas is performed only when the conveying plate is above the valve, and is not supplied at other times. The exposed lower surface of the transport plate and the lower surface of the magnetic plate are formed to be flat.

【0018】半導体ウエーハの各種処理を行うために
は、搬送板の転送方向の変換、昇降、ウエーハの所在の
検出若しくは上記搬送板の待機などを行うことが必要で
あるので、これら方向変換、昇降、ウエーハの存在の検
出若しくは搬送板の待機をそれぞれ行うための機構を、
所望の搬送室や処理装置に隣接して設けることが実用上
有利である。
In order to perform various processes on the semiconductor wafer, it is necessary to change the transfer direction of the transfer plate, move up and down, detect the location of the wafer, or wait for the transfer plate. A mechanism for detecting the presence of a wafer or waiting for a transport plate, respectively.
It is practically advantageous to provide it adjacent to a desired transfer chamber or processing apparatus.

【0019】また、上記搬送板から上記半導体ウエーハ
を大気中若しくは所望の処理装置内に取り出す機構を、
所望の上記搬送室に設けることによって、実用上の利便
性は著しく向上する。さらに、上記半導体ウエーハの番
号を認識するためのセンサを所望の搬送室に配置し、こ
のセンサからの信号によって、上記半導体ウエーハの次
の搬送を制御する手段を設けることができ、次の処理装
置などへの搬送に実用上有利であることが多い。
A mechanism for taking out the semiconductor wafer from the transport plate into the atmosphere or into a desired processing apparatus is provided.
By providing the transfer chamber in the desired transfer chamber, practical convenience is remarkably improved. Further, a sensor for recognizing the number of the semiconductor wafer is disposed in a desired transfer chamber, and means for controlling the next transfer of the semiconductor wafer by a signal from the sensor can be provided. In many cases, it is practically advantageous for transportation to such places.

【0020】[0020]

【発明の実施の形態】実施例1 図1、図2および図3を用いて本発明の第1の実施例を
説明する。図1および図2は、それぞれ本実施例の搬送
室の断面および平面構造を示す図である。図1から明ら
かなように、搬送室12には複数の溝8が形成されてお
り、この溝8には、不活性ガスとしてAr14を弁11
を介して導入した。このようにすると、その上に置かれ
たた搬送板4は、溝8の総面積と供給されたArの圧力
の積と搬送板4の重量とが釣り合う浮上力を下方から受
けて浮上した。次にロータ3とステータ9からなるリニ
アモータを駆動させて、浮上した上記搬送板4を搬送室
12とは非接触で搬送した。
Embodiment 1 A first embodiment of the present invention will be described with reference to FIGS. 1, 2 and 3. FIG. 1 and 2 are views showing a cross section and a planar structure of the transfer chamber of the present embodiment, respectively. As is apparent from FIG. 1, a plurality of grooves 8 are formed in the transfer chamber 12, and Ar 14 is used as an inert gas in the grooves 8 as a valve 11.
Introduced via By doing so, the transport plate 4 placed thereon received a floating force from below, which balanced the product of the total area of the groove 8 and the pressure of the supplied Ar and the weight of the transport plate 4, and floated. Next, by driving a linear motor composed of the rotor 3 and the stator 9, the floating transport plate 4 was transported without contact with the transport chamber 12.

【0021】本実施例では、浮上した搬送板4の下面と
搬送室12の上面との隙間7が5/100mm以下にな
るように上記Arの圧力、ポンプの排気速度を調節し
た。また、多量のArが上記隙間7を介して搬送室12
内に漏れるのは好ましくないので、これを防止するた
め、図2,3に示したように搬送板4の下面の中央部に
純鉄板2を埋設した。搬送板4が溝8の上に来ると、上
記Arの供給口14に設けられた上部に永久磁石15を
有する弁11が、上記純鉄板2に引かれて上昇してパッ
キング13から離れて、弁11が開いた状態になり、A
rが弁11から隙間を介して溝8内に導入され、搬送板
4が浮上する。しかし、搬送板4が移動してその端部が
溝8の近傍に来ると、上記純鉄板2が永久磁石15の上
方の位置から離れるので、弁11が下降して閉じた状態
になり、Arの導入が停止した。すなわち、本実施例で
は、搬送板4が弁11の上方にあるときのみに弁11が
開いて溝8内に不活性ガスが導入され、搬送板4がその
位置から離れると弁4が閉じて不活性ガスの導入が停止
するので、余分なArの流入が防止された。なお、本実
施例では、純鉄板2を用いたが、純鉄に限定されるもの
ではなく、磁石との間に吸引力を生ずる磁性体の板を広
く使用できることはいうまでもない。
In the present embodiment, the pressure of Ar and the pumping speed of the pump were adjusted so that the gap 7 between the lower surface of the floating transfer plate 4 and the upper surface of the transfer chamber 12 was 5/100 mm or less. Further, a large amount of Ar is transferred to the transfer chamber 12 through the gap 7.
Since it is not preferable to leak into the inside, in order to prevent this, the pure iron plate 2 is buried in the center of the lower surface of the transport plate 4 as shown in FIGS. When the transport plate 4 comes over the groove 8, the valve 11 having the permanent magnet 15 at the upper portion provided at the Ar supply port 14 is pulled by the pure iron plate 2 and rises to separate from the packing 13, The valve 11 is opened and A
r is introduced from the valve 11 into the groove 8 via the gap, and the transport plate 4 floats. However, when the transport plate 4 moves and its end comes near the groove 8, the pure iron plate 2 moves away from the position above the permanent magnet 15, so that the valve 11 is lowered and closed, and Ar Installation has stopped. That is, in the present embodiment, the valve 11 is opened and the inert gas is introduced into the groove 8 only when the transfer plate 4 is above the valve 11, and when the transfer plate 4 is separated from the position, the valve 4 closes. Since the introduction of the inert gas was stopped, the inflow of extra Ar was prevented. In this embodiment, the pure iron plate 2 is used. However, the present invention is not limited to pure iron, and it goes without saying that a magnetic plate that generates an attractive force with a magnet can be widely used.

【0022】上記隙間7のコンダクタンスは小さく、搬
送板4を浮上させるための圧力も小さいので、溝8から
搬送室12へのArの漏れ量は少なく、圧力上昇も僅か
であった。また、上記リニアモータは回転にともなって
発熱するが、発生した熱は上記Arを介して外部に放散
されるので、周辺部品の温度上昇は効果的に防止され
た。上記隙間7は排気に用いた真空ポンプ(図示せず)
の排気速度、圧力値およびコンダクタンスから適当な値
に調整される。
Since the conductance of the gap 7 is small and the pressure for floating the transfer plate 4 is small, the leakage amount of Ar from the groove 8 to the transfer chamber 12 is small, and the pressure rise is also small. Further, the linear motor generates heat as it rotates, but the generated heat is radiated to the outside via the Ar, so that the temperature rise of the peripheral components is effectively prevented. The gap 7 is a vacuum pump (not shown) used for exhaust.
Is adjusted to an appropriate value based on the pumping speed, pressure value, and conductance.

【0023】リニアモータによる搬送板4の搬送速度は
100mm/秒程度であり、搬送時間は数秒程度である
ため、この間にパルス的な圧力上昇が生じ、半導体ウエ
ーハ1の表面にArが物理吸着するのは避けられない。
しかし、半導体ウエーハ1へのArの凝縮係数や活性化
エネルギは小さいので、搬送後にArの供給を停止して
Arの圧力を低下させると、半導体ウエーハ1の表面上
のArは1秒以内に脱離し、障害は生じなかった。
Since the transport speed of the transport plate 4 by the linear motor is about 100 mm / sec and the transport time is about several seconds, a pulse-like pressure rise occurs during this time, and Ar is physically adsorbed on the surface of the semiconductor wafer 1. It is inevitable.
However, since the condensation coefficient and activation energy of Ar to the semiconductor wafer 1 are small, if the supply of Ar is stopped after the transfer and the pressure of Ar is reduced, Ar on the surface of the semiconductor wafer 1 is desorbed within one second. Release and no damage occurred.

【0024】なお、本実施例では、溝8を搬送板4の進
行方向25に対して一列に配置したが、搬送板4をバラ
ンスよく浮上させるために、溝8の数や位置を適宜変更
してもよい。また、本実施例では不活性ガスとしてAr
を使用したが、Arに限定されるものではなく、他の各
種不活性ガスを使用することができる。
In this embodiment, the grooves 8 are arranged in a line with respect to the traveling direction 25 of the carrier plate 4. However, in order to float the carrier plate 4 in a balanced manner, the number and position of the grooves 8 are appropriately changed. You may. In this embodiment, Ar gas is used as the inert gas.
Was used, but it is not limited to Ar, and various other inert gases can be used.

【0025】本実施例において、搬送板4の重さ2.1
kg、溝8の総面積114.7cm、溝8内のArの
圧力1.8kPaとした場合、2.1kgfの浮力が得
られた。また、溝8内のArの圧力1.8kPa、隙間
7が2/100mmの場合、熱伝導係数は40W/m
・kであり、パルス的な投入エネルギの大半がArの熱
伝導によって搬送室12側に移り、リニアモータおよび
その周辺における部品の温度上昇は防止されて、微細な
隙間7が確保できることが確認された。この場合におけ
るArの漏れ量は6×10−4Pa・m/sであり、
排気量1500l/minのメカニカルブースタポンプ
を用いて排気し、5枚の搬送板4を同時に搬送すると、
圧力は1.3×10−2Paから1.2×10−1Pa
へ低下したが、搬送を停止すると直ちに元の1.3×1
−2Paに近い圧力に戻り、支障は生じなかった。
In this embodiment, the weight of the transport plate 4 is 2.1.
kg, the total area of the groove 8 was 114.7 cm 2 , and the pressure of Ar in the groove 8 was 1.8 kPa, a buoyancy of 2.1 kgf was obtained. When the pressure of Ar in the groove 8 is 1.8 kPa and the gap 7 is 2/100 mm, the heat conduction coefficient is 40 W / m 2.
K, most of the pulsed input energy is transferred to the transfer chamber 12 side by the heat conduction of Ar, and it is confirmed that the linear motor and the parts around it are prevented from increasing in temperature and the minute gap 7 can be secured. Was. In this case, the leakage amount of Ar is 6 × 10 −4 Pa · m 3 / s,
When the air is evacuated using a mechanical booster pump with a displacement of 1500 l / min and the five conveying plates 4 are simultaneously conveyed,
The pressure is from 1.3 × 10 −2 Pa to 1.2 × 10 −1 Pa
To 1.3 x 1
The pressure returned to a pressure close to 0 -2 Pa, and no trouble occurred.

【0026】また、搬送系内を排気して真空にした後、
真空ポンプによる排気を行わずに、溝8内にArを供給
しながら搬送板4を搬送を行うと搬送室内の圧力は上昇
したが、Arの供給量を調節して系内の圧力が1気圧を
越えないようにすれば、安全上の問題は特に生じないこ
とが確認された。搬送系は完全にシールされているの
で、外部からの汚染が生ずる恐れはなく、大気圧雰囲気
中で使用される処理装置間の搬送に特に好適である。半
導体ウエーハ1の表面へのArの吸着は避けられない
が、上記のように、搬送終了後、速やかに脱着されるの
で問題はない。
After the inside of the transfer system is evacuated and evacuated,
When the transport plate 4 is transported while supplying Ar into the groove 8 without evacuating by the vacuum pump, the pressure in the transport chamber rises, but the pressure in the system is reduced to 1 atm by adjusting the supply amount of Ar. It was confirmed that there would be no particular safety problem if it was not exceeded. Since the transfer system is completely sealed, there is no possibility of contamination from the outside, and the transfer system is particularly suitable for transfer between processing apparatuses used in an atmospheric pressure atmosphere. Although the adsorption of Ar on the surface of the semiconductor wafer 1 is inevitable, there is no problem since it is quickly desorbed after the transfer as described above.

【0027】実施例2 半導体装置の製造装置においては、真空中および大気中
などでそれぞれ処理を行う各種処理装置が混在してい
る。搬送板に収納された半導体ウエーハは、高真空下で
搬送されて各種処理装置内に入り、それぞれ処理に供さ
れる。本実施例は半導体ウエーハを搬送板から取り出す
機構の一例であり、図4を用いて説明する。
Embodiment 2 In a semiconductor device manufacturing apparatus, various processing apparatuses for performing processing in vacuum and in the atmosphere are mixed. The semiconductor wafer stored in the transfer plate is transferred under a high vacuum, enters various processing apparatuses, and is subjected to each processing. This embodiment is an example of a mechanism for taking out a semiconductor wafer from a carrier plate, and will be described with reference to FIG.

【0028】半導体ウエーハ1が収納された搬送板4は
搬送室12内に入り、停止する。ベローズ24を用いて
二重軸の外側軸26を上部に動かし、それによって、搬
送板4が置かれたフランジ27を上部に移動させて、フ
ランジ27の上面に配置されたパッキング21によって
搬送室12と上部のロック室17を互いに隔離する。
The transfer plate 4 containing the semiconductor wafer 1 enters the transfer chamber 12 and stops. The bellows 24 is used to move the outer shaft 26 of the double shaft to the upper part, thereby moving the flange 27 on which the carrier plate 4 is placed to the upper part, and by means of the packing 21 arranged on the upper surface of the flange 27, the transport chamber 12 And the upper lock chamber 17 are isolated from each other.

【0029】次に、上記ロック室17内に乾燥窒素19
を入れて大気圧とした後、スイングシリンダ20を用い
て上部フランジ16を回転させて僅かに上方へ移動さ
せ、さらに圧縮空気6とベローズ24によって、二重軸
の内部軸25、その上のチャック18および半導体ウエ
ーハ1を上方へ押し上げた。押し上げられた半導体ウエ
ーハ1をフォーク(図示せず)等によって受け取り、大
気圧の処理室(図示せず)に移した。大気圧の処理室か
ら真空搬送系へ移す場合は、本実施例とは逆の順序で行
えばよい。
Next, dry nitrogen 19 is stored in the lock chamber 17.
, And the upper flange 16 is rotated slightly upward using the swing cylinder 20, and furthermore, the inner shaft 25 of the double shaft and the chuck thereon are further compressed by the compressed air 6 and the bellows 24. 18 and the semiconductor wafer 1 were pushed upward. The pushed-up semiconductor wafer 1 was received by a fork (not shown) or the like, and was transferred to an atmospheric pressure processing chamber (not shown). The transfer from the processing chamber at atmospheric pressure to the vacuum transfer system may be performed in the reverse order of the present embodiment.

【0030】本実施例では、半導体ウエーハ1と上部フ
ランジ16の間の隙間が小さいので、通常行われる排気
速度を遅くして、水蒸気エアロゾルによるパーテイクル
の付着を防止する操作は不要であり、ベントおよび排気
を短時間で行うことができた。
In the present embodiment, since the gap between the semiconductor wafer 1 and the upper flange 16 is small, it is not necessary to reduce the usual exhaust speed to prevent the particles from adhering due to the steam aerosol. The evacuation could be performed in a short time.

【0031】半導体ウエーハ1を真空処理装置内へ入れ
る場合は、上記ロック室17内に窒素などを導入せず、
上記内部軸25を用いて半導体ウエーハ1を上部へ上昇
させた後、フォーク等(図示せず)を用いて真空処理装
置内へ入れればよい。また、図示されていないが、搬送
室12の側部からスリットバルブを介して半導体ウエー
ハ1の出し入れを行うようにして、真空処理室室内に半
導体ウエーハ1を移すようにしてもよい。
When the semiconductor wafer 1 is put into a vacuum processing apparatus, nitrogen or the like is not introduced into the lock chamber 17 and
After the semiconductor wafer 1 is lifted upward using the internal shaft 25, the semiconductor wafer 1 may be inserted into a vacuum processing apparatus using a fork or the like (not shown). Although not shown, the semiconductor wafer 1 may be moved into and out of the vacuum processing chamber by taking in and out the semiconductor wafer 1 from the side of the transfer chamber 12 via a slit valve.

【0032】上記従来技術においては、半導体ウエーハ
を真空室から他の真空室へ移す場合は特に問題はない
が、大気中に取り出す場合は、ゲートバルブを用いると
パーテイクルが発生し、スリットバルブを用いると大気
圧室を大気圧に保持できないという問題があった。しか
し、本実施例ではこのような問題なしに真空室および大
気圧中に半導体ウエーハを取り出すことができた。
In the above prior art, there is no particular problem when the semiconductor wafer is transferred from a vacuum chamber to another vacuum chamber. However, when the semiconductor wafer is taken out into the atmosphere, particles are generated when a gate valve is used, and a slit valve is used. There was a problem that the atmospheric pressure chamber could not be maintained at atmospheric pressure. However, in this embodiment, the semiconductor wafer could be taken out in the vacuum chamber and the atmospheric pressure without such a problem.

【0033】実施例3 半導体ウエハが処理装置内で処理されている間、搬送板
は待機している必要があり、そのために必要な搬送板の
保管機構の一例を図5に示した。
Embodiment 3 While the semiconductor wafer is being processed in the processing apparatus, the transport plate needs to be on standby. FIG. 5 shows an example of a transport plate storage mechanism required for that.

【0034】回転室22内には回転台28が設けられて
おり、この回転台28にはロータ3とステータ9からな
るリニアモータが搭載されている。この回転台28の上
に搬送板4が来ると、軸29を回転軸として回転台28
を90゜回転させた後、回転台28上の搬送板4を上記
リニアモータによって所望の搬送室12へ移す。あるい
は適当な昇降機構(図示せず)を用いて搬送板4を重ね
て保管してもよい。搬送中の半導体ウエーハの番号を認
識して次の処理装置へ搬送する場合は、搬送系の途中
に、搬送系の内部若しくは外部からウエーハ番号を認識
する機構を付加すればよい。
A rotary table 28 is provided in the rotary chamber 22, and a linear motor including the rotor 3 and the stator 9 is mounted on the rotary table 28. When the transport plate 4 comes on the turntable 28, the turntable 28
Is rotated by 90 °, the transfer plate 4 on the turntable 28 is moved to a desired transfer chamber 12 by the linear motor. Alternatively, the transport plate 4 may be stored while being stacked using a suitable lifting mechanism (not shown). When recognizing the number of the semiconductor wafer being transported and transporting it to the next processing apparatus, a mechanism for recognizing the wafer number from inside or outside the transport system may be added in the middle of the transport system.

【0035】[0035]

【発明の効果】上記説明から明らかなように、本発明に
よれば、各処理装置間や工場間などを変質や汚染の恐れ
なしに、半導体ウエーハの搬送を行うことができる。ま
た、ウエーハの磁気浮上を行っていないので、構造は簡
単で小型化は容易である、搬送に要するマンパワーが少
なくてよい、連続フロー生産できるなど、多くの利点を
有しており、生産コストの削減、スループットの向上お
よびさらなる微細化の実現に極めて有用である。
As is clear from the above description, according to the present invention, semiconductor wafers can be transported between processing apparatuses and factories without fear of deterioration or contamination. Also, since the wafer is not magnetically levitated, it has many advantages such as simple structure and easy miniaturization, low manpower required for transportation, and continuous flow production. It is extremely useful for reduction, improvement in throughput, and realization of further miniaturization.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施例を説明するための断面
図。
FIG. 1 is a sectional view for explaining a first embodiment of the present invention.

【図2】本発明の第1の実施例を説明するための平面
図。
FIG. 2 is a plan view for explaining the first embodiment of the present invention.

【図3】図1の一部を拡大した断面図。FIG. 3 is an enlarged sectional view of a part of FIG. 1;

【図4】ウエーハの取り出し機構を説明するための断面
図。
FIG. 4 is a cross-sectional view for explaining a wafer take-out mechanism.

【図5】搬送板を保管する機構を説明するための平面
図。
FIG. 5 is a plan view for explaining a mechanism for storing a transport plate.

【符号の説明】[Explanation of symbols]

1…ウエーハ、2…純鉄板、3…ロータ、4…搬送板、
5…排気系、6…圧縮空気、7…隙間、8…溝、9…ス
テータ、10…進行方向、11…弁、12…搬送室、1
3…パッキング、14…Ar、15…永久磁石、16…
上部フランジ、17…ロック室、18…チャック、19
…乾燥窒素、20…スイングシリンダ、21…パッキン
グ、22…回転室、23…シリンダ、24…ベローズ、
25…内側軸、26…外側軸、 27…フランジ、 2
8…回転台、 29…回転軸。
1 ... wafer, 2 ... pure iron plate, 3 ... rotor, 4 ... transfer plate,
5 exhaust system, 6 compressed air, 7 gap, 8 groove, 9 stator, 10 traveling direction, 11 valve, 12 transfer chamber, 1
3: packing, 14: Ar, 15: permanent magnet, 16:
Upper flange, 17: Lock chamber, 18: Chuck, 19
... Dry nitrogen, 20 ... Swing cylinder, 21 ... Packing, 22 ... Rotating chamber, 23 ... Cylinder, 24 ... Bellows,
25 inner shaft, 26 outer shaft, 27 flange, 2
8 ... turntable, 29 ... rotary shaft.

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】半導体ウエーハが搭載された搬送板を所望
の場所に搬送するための搬送室を具備し、当該搬送室は
当該搬送室内に搬送された上記搬送板の下面に不活性ガ
スを供給して上記搬送板を浮上させる手段および浮上し
た上記搬送板を移動させる手段を有することを特徴とす
るウエーハ搬送装置。
1. A transfer chamber for transferring a transfer plate on which a semiconductor wafer is mounted to a desired location, wherein the transfer chamber supplies an inert gas to a lower surface of the transfer plate transferred into the transfer chamber. A wafer transporting device having means for floating the transport plate and means for moving the transported plate.
【請求項2】上記不活性ガスは上記搬送室に設けられた
複数の溝を介して上記搬送板の下面に供給されることを
特徴とする請求項1に記載のウエーハ搬送装置。
2. The wafer transfer apparatus according to claim 1, wherein the inert gas is supplied to a lower surface of the transfer plate via a plurality of grooves provided in the transfer chamber.
【請求項3】上記浮上した搬送板を移動させる手段はリ
ニアモータであることを特徴とする請求項1若しくは2
に記載のウエーハ搬送装置。
3. A linear motor according to claim 1, wherein said means for moving said floating transport plate is a linear motor.
2. The wafer transfer device according to 1.
【請求項4】上記不活性ガスの圧力を所望の値に制御す
る手段を有することを特徴とする請求項1から3のいず
れか一に記載のウエーハ搬送装置。
4. The wafer transfer device according to claim 1, further comprising means for controlling the pressure of the inert gas to a desired value.
【請求項5】上記搬送室内を排気する手段を有すること
を特徴とする請求項1から4のいずれか一に記載のウエ
ーハ搬送装置。
5. The wafer transfer apparatus according to claim 1, further comprising means for exhausting the inside of the transfer chamber.
【請求項6】上記搬送室は上記溝内への上記不活性ガス
の導入を制御するための弁を具備し、当該弁の上端部に
は磁石が配置され、かつ、上記搬送板の下面の所定の位
置には磁性体の板が埋設されていることを特徴とする請
求項1から5のいずれか一に記載のウエーハ搬送装置。
6. The transfer chamber includes a valve for controlling the introduction of the inert gas into the groove, a magnet is disposed at an upper end of the valve, and a lower surface of the transfer plate is provided. 6. The wafer transfer device according to claim 1, wherein a magnetic plate is buried at a predetermined position.
【請求項7】所望の上記搬送室若しくは上記半導体ウエ
ーハの処理装置には、上記搬送板の転送方向を変換する
機構、上記搬送板の昇降を行う機構若しくは上記搬送板
を待機させる機構が隣接して設けられていることを特徴
とする請求項1から6のいずれか一に記載のウエーハ搬
送装置。
7. A mechanism for changing the transfer direction of the transfer plate, a mechanism for raising and lowering the transfer plate, or a mechanism for waiting the transfer plate is adjacent to the desired transfer chamber or the processing apparatus for the semiconductor wafer. The wafer transfer device according to any one of claims 1 to 6, wherein the wafer transfer device is provided.
【請求項8】所望の上記搬送室には、上記搬送板から上
記半導体ウエーハを大気中若しくは所望の気体雰囲気中
に取り出す機構が隣接して設けられていることを特徴と
する請求項1から7のいずれか一に記載のウエーハ搬送
装置。
8. A mechanism for taking out the semiconductor wafer from the transfer plate into the atmosphere or a desired gas atmosphere adjacent to the desired transfer chamber. The wafer transfer device according to any one of the above.
【請求項9】上記半導体ウエーハの番号を認識するため
のセンサと、当該センサからの信号によって上記半導体
ウエーハの次の搬送を制御する手段を有することを特徴
とする請求項1から8のいずれか一に記載のウエーハ搬
送装置。
9. A semiconductor device according to claim 1, further comprising a sensor for recognizing the number of said semiconductor wafer, and means for controlling the next transfer of said semiconductor wafer by a signal from said sensor. The wafer transfer device according to claim 1.
JP11111258A 1999-03-16 1999-03-16 Wafer conveying device Pending JP2000264438A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11111258A JP2000264438A (en) 1999-03-16 1999-03-16 Wafer conveying device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11111258A JP2000264438A (en) 1999-03-16 1999-03-16 Wafer conveying device

Publications (1)

Publication Number Publication Date
JP2000264438A true JP2000264438A (en) 2000-09-26

Family

ID=14556645

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP2000264438A (en)

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JP2008153577A (en) * 2006-12-20 2008-07-03 Toppan Printing Co Ltd Method and device for conveying sheet substrate

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