JP2000261096A5 - - Google Patents

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Publication number
JP2000261096A5
JP2000261096A5 JP2000055745A JP2000055745A JP2000261096A5 JP 2000261096 A5 JP2000261096 A5 JP 2000261096A5 JP 2000055745 A JP2000055745 A JP 2000055745A JP 2000055745 A JP2000055745 A JP 2000055745A JP 2000261096 A5 JP2000261096 A5 JP 2000261096A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2000055745A
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JP2000261096A (ja
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Priority claimed from US09/263,696 external-priority patent/US6252896B1/en
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Publication of JP2000261096A publication Critical patent/JP2000261096A/ja
Publication of JP2000261096A5 publication Critical patent/JP2000261096A5/ja
Withdrawn legal-status Critical Current

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JP2000055745A 1999-03-05 2000-03-01 Ｄｂｒを用いた発光デバイス Withdrawn JP2000261096A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/263,696 US6252896B1 (en) 1999-03-05 1999-03-05 Long-Wavelength VCSEL using buried bragg reflectors
US263696 1999-03-05

Publications (2)

Publication Number Publication Date
JP2000261096A JP2000261096A (ja) 2000-09-22
JP2000261096A5 true JP2000261096A5 (ja) 2006-08-24

Family

ID=23002879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000055745A Withdrawn JP2000261096A (ja) 1999-03-05 2000-03-01 Ｄｂｒを用いた発光デバイス

Country Status (4)

Country Link
US (1) US6252896B1 (ja)
EP (1) EP1037341B1 (ja)
JP (1) JP2000261096A (ja)
DE (1) DE60002387T2 (ja)

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US7435660B2 (en) * 1998-12-21 2008-10-14 Finisar Corporation Migration enhanced epitaxy fabrication of active regions having quantum wells
US7095770B2 (en) 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US6922426B2 (en) 2001-12-20 2005-07-26 Finisar Corporation Vertical cavity surface emitting laser including indium in the active region
US7167495B2 (en) * 1998-12-21 2007-01-23 Finisar Corporation Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
US7058112B2 (en) 2001-12-27 2006-06-06 Finisar Corporation Indium free vertical cavity surface emitting laser
US7286585B2 (en) * 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US6975660B2 (en) 2001-12-27 2005-12-13 Finisar Corporation Vertical cavity surface emitting laser including indium and antimony in the active region
US7408964B2 (en) 2001-12-20 2008-08-05 Finisar Corporation Vertical cavity surface emitting laser including indium and nitrogen in the active region
US6445495B1 (en) * 1999-03-22 2002-09-03 Genoa Corporation Tunable-gain lasing semiconductor optical amplifier
US6891664B2 (en) 1999-03-22 2005-05-10 Finisar Corporation Multistage tunable gain optical amplifier
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US6424669B1 (en) 1999-10-29 2002-07-23 E20 Communications, Inc. Integrated optically pumped vertical cavity surface emitting laser
US6879615B2 (en) * 2000-01-19 2005-04-12 Joseph Reid Henrichs FCSEL that frequency doubles its output emissions using sum-frequency generation
US6936900B1 (en) * 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
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US6434180B1 (en) * 2000-12-19 2002-08-13 Lucent Technologies Inc. Vertical cavity surface emitting laser (VCSEL)
US6556610B1 (en) 2001-04-12 2003-04-29 E20 Communications, Inc. Semiconductor lasers
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DE10134825A1 (de) * 2001-06-20 2003-01-09 Infineon Technologies Ag Photonen-Emitter und Datenübertragungsvorrichtung
US6717964B2 (en) 2001-07-02 2004-04-06 E20 Communications, Inc. Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers
US6647050B2 (en) * 2001-09-18 2003-11-11 Agilent Technologies, Inc. Flip-chip assembly for optically-pumped lasers
FR2833758B1 (fr) * 2001-12-13 2004-12-10 Commissariat Energie Atomique Dispositif d'emission de lumiere a micro-cavite et procede de fabrication de ce dispositif
US6891865B1 (en) * 2002-02-15 2005-05-10 Afonics Fibreoptics, Ltd. Wavelength tunable laser
US7295586B2 (en) * 2002-02-21 2007-11-13 Finisar Corporation Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
US6822995B2 (en) * 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US6989556B2 (en) * 2002-06-06 2006-01-24 Osemi, Inc. Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure
US7187045B2 (en) * 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
JP2004207480A (ja) * 2002-12-25 2004-07-22 Pioneer Electronic Corp 半導体レーザ装置及びその製造方法
KR101180166B1 (ko) * 2003-11-13 2012-09-05 오스람 옵토 세미컨덕터스 게엠베하 반도체 레이저 장치
WO2005048318A2 (en) * 2003-11-17 2005-05-26 Osemi, Inc. Nitride metal oxide semiconductor integrated transistor devices
WO2005061756A1 (en) * 2003-12-09 2005-07-07 Osemi, Inc. High temperature vacuum evaporation apparatus
US6947466B2 (en) * 2004-01-29 2005-09-20 Coherent, Inc. Optically pumped edge-emitting semiconductor laser
DE102004004781A1 (de) * 2004-01-30 2005-08-18 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
FR2867900A1 (fr) * 2004-03-16 2005-09-23 Commissariat Energie Atomique Dispositif d'emission de lumiere avec une structure emettrice a micro-cavite et une diode de pompe a cavite verticale et procede de fabrication
JP4602685B2 (ja) * 2004-04-14 2010-12-22 株式会社リコー 垂直共振器型面発光半導体レーザ素子および発光装置および光伝送システム
FR2870051B1 (fr) * 2004-05-04 2009-04-03 Commissariat Energie Atomique Emetteur de rayonnement avec faisceau de pompage incline
US7372886B2 (en) 2004-06-07 2008-05-13 Avago Technologies Fiber Ip Pte Ltd High thermal conductivity vertical cavity surface emitting laser (VCSEL)
CN101432936B (zh) 2004-10-01 2011-02-02 菲尼萨公司 具有多顶侧接触的垂直腔面发射激光器
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US7719015B2 (en) * 2004-12-09 2010-05-18 3M Innovative Properties Company Type II broadband or polychromatic LED's
US7745814B2 (en) * 2004-12-09 2010-06-29 3M Innovative Properties Company Polychromatic LED's and related semiconductor devices
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7453629B2 (en) * 2005-12-29 2008-11-18 Lucent Technologies Inc. Semiconductor optical amplifier pulse reshaper
JP5214140B2 (ja) * 2006-12-12 2013-06-19 浜松ホトニクス株式会社 半導体発光素子
US7433374B2 (en) * 2006-12-21 2008-10-07 Coherent, Inc. Frequency-doubled edge-emitting semiconductor lasers
WO2009075972A2 (en) * 2007-12-10 2009-06-18 3M Innovative Properties Company Down-converted light emitting diode with simplified light extraction
DE102008048903B4 (de) * 2008-09-25 2021-06-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauteil
SE534345C2 (sv) * 2009-09-24 2011-07-19 Svedice Ab Fotodiod av typen lavinfotodiod.
DE102014200583B3 (de) * 2014-01-15 2015-05-13 Robert Bosch Gmbh Verfahren zum herstellen eines integrierten mikromechanischen fluidsensor-bauteils, integriertes mikromechanisches fluidsensor-bauteil und verfahren zum detektieren eines fluids mittels eines integrierten mikromechanischen fluidsensor-bauteils
CN111740312B (zh) * 2020-06-28 2023-04-07 海南师范大学 一种双波长单片集成面发射半导体激光器

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JP2576692B2 (ja) * 1993-07-14 1997-01-29 日本電気株式会社 波長多重用光デバイスの製造方法
US5363390A (en) * 1993-11-22 1994-11-08 Hewlett-Packard Company Semiconductor laser that generates second harmonic light by means of a nonlinear crystal in the laser cavity
US5513204A (en) 1995-04-12 1996-04-30 Optical Concepts, Inc. Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump
DE19523267A1 (de) * 1995-06-27 1997-01-02 Bosch Gmbh Robert Lasermodul
US5754578A (en) 1996-06-24 1998-05-19 W. L. Gore & Associates, Inc. 1250-1650 nm vertical cavity surface emitting laser pumped by a 700-1050 nm vertical cavity surface emitting laser
FR2751796B1 (fr) * 1996-07-26 1998-08-28 Commissariat Energie Atomique Microlaser soilde, a pompage optique par laser semi-conducteur a cavite verticale

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