JP2000260570A - Thin-film el element and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To thermally stabilize an electrode and realize blue luminescence with high brightness by installing a substrate having heat resistant temperature or a melting point of a specified value or higher, an electrode layer containing silicon as a main component and having conductivity, an insulating layer positioned on a luminescent layer side than the electrode layer, a luminescent layer placed between this insulating layer and another insulating layer, and another electrode layer formed on the opposite side to the luminescent layer of the another insulating layer. SOLUTION: A substrate has a heat resistant temperature or a melting point of at least 600 deg.C or higher. An electrode layer preferably contains impurities added to ensure conductivity, in addition to silicon of a main component, and as the impurities, B, P, As, Sb, and Al are cited. Preferably, resistivity of the electrode layer is 1 Ω.cm or less, and the film thickness of the electrode layer is 50-2,000 nm. An insulating layer is preferably formed with an oxide of an electrode constituting material. The insulating layer is preferably a material having a resistivity of 108 Ω.cm or higher and a relatively high dielectric constant, such as about 3-1,000. The film thickness of the insulating layer is preferably 20-500 nm.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin-film EL (electroluminescence) element suitably used as a thin and flat display means.

[0002]

2. Description of the Related Art Thin-film EL devices having a light-emitting layer made of an inorganic substance utilizing a phenomenon called electroluminescence (electric field effect) are used as light-emitting devices in flat-panel displays.

[0003] The luminescent color of a thin film EL device is determined by the material of the luminescent layer of the device. Conventionally, ZnS, CaS, SrS, and the like have been selected as the base material as the material of the light-emitting layer, and the luminescent center material has been selected from, for example, a group of transition metal elements.

[0004] By combining these, ZnS: Mn
, A green light-emitting element using ZnS: Tb, etc., a red light-emitting element using CaS: Eu or ZnS: Sm, etc., and SrS: Ce or ZnS: Tm.
There are known blue light emitting elements using the same.

Further, as a white light emitting element, SrS: C
e, Eu or ZnS: Pr, etc.
S: Ce / CaS: Eu, or JP-A-62-749
86, a laminated light emitting layer of SrS: Ce / ZnS: Mn or the like is known.

[0006] However, among the above-mentioned light-emitting elements, those practically used are about yellow light-emitting elements using ZnS: Mn, and other light-emitting elements have not obtained sufficient light emission luminance. At present, blue light-emitting elements have not yet been put to practical use.

What hinders the development of EL displays is that no blue light emitting element or white light emitting element with high luminance and high color purity has been found.

When a white light-emitting element is obtained by using a full-color display or a yellow light-emitting element using ZnS: Mn which is currently in practical use, one ternary color, blue, which is a complementary color of yellow light emission, is used. It is necessary to improve the performance of the light emitting element.

The white light emitting device disclosed in the above-mentioned Japanese Patent Application Laid-Open No. Sho 62-74886 has inferior SrS: Ce performance.
Since it has a slightly greenish blue color, it has a greenish white color as a whole.

If a high performance blue light emitting device is realized, Zn
By combining with a yellow light emitting element using S: Mn, a high performance white light emitting element can be realized.

As a promising fluorescent substance for blue light emission,
SrS is known. IDW (International Display
Workshop) 1997 X.Wu "Multicolor Thin-Film Ceramic
Hybrid EL Displays "p593 to 596 discusses an EL display using SrS.

In this document, SrS is doped with Ce to improve the stability and, as an effective means for preventing the deterioration of SrS, to prevent contamination from oxygen and to provide high purity SrS.
It is described that a technique of forming a light emitting layer by an electron beam evaporation method in an H ₂ S atmosphere is effective for forming an S light emitting layer. Further, it is described that good luminescence characteristics can be obtained by annealing the formed luminescent layer at a temperature of 600 ° C. or more in a nitrogen atmosphere.

However, the EL element described in the above-mentioned document requires annealing at 600 ° C. or higher. For this reason, an electrode formed by firing in a thick film process is usually used as the electrode layer. Therefore, a surface flattening step by a sol-gel process is required. However, it is difficult to completely flatten the electrode surface formed by the thick film process only by the sol-gel process, which has been an obstacle in improving the performance and accuracy of the display. Further, the electrodes formed by the thick film process have a limit of several hundred μm at most in accuracy, and a display having a finer pattern than that can not be constituted. Therefore, the display is set to S
It is extremely difficult to correspond to a high definition screen such as VGA.

It is also conceivable to form a metal film in a thin film process as an electrode having a flat surface. However, when the above-mentioned heat treatment is performed, this metal electrode hillock is generated, and this hillock is formed thereon. There is a possibility that cracks may occur in the dielectric (insulating layer), resulting in poor insulation. In addition, when heat treatment is performed, a diffusion phenomenon of a material element occurs between the metal electrode and the dielectric layer, which may cause insulation failure.

[0015]

SUMMARY OF THE INVENTION It is an object of the present invention to provide an electrode which is thermally stable, hardly causes defects, can emit blue light with high luminance, and can emit white light, full color, and high definition. Another object of the present invention is to realize a thin-film EL element which is easy to manufacture and a method of manufacturing the same.

[0016]

That is, the above object is achieved by the following constitutions. (1) a substrate having at least a heat-resistant temperature or a melting point of 600 ° C. or more; an electrode layer containing silicon as a main component and having conductivity; an insulating layer closer to the light emitting layer than the electrode layer; A thin-film EL device comprising: a light-emitting layer sandwiched between the above-mentioned insulating layers; and another electrode layer formed on the other insulating layer on the side opposite to the light-emitting layer. (2) The thin-film EL device according to the above (1), wherein the insulating layer is formed of an oxide of a material constituting an electrode layer. (3) The thin-film EL device according to (1), wherein the other insulating layer has a resistivity of 1 × 10 ⁸ Ω · cm or more and is made of a material having a dielectric constant of 3 or more. (4) The thin film EL device according to any one of (1) to (3), wherein the resistivity of the electrode layer is 1 Ω · cm or less. (5) The electrode layer is made of B, P, As, Sb on silicon.
And the thin film EL device according to any one of the above (1) to (4), wherein one or two or more of Al are doped. (6) The thin film EL device according to any one of (1) to (5), wherein the thickness of the electrode layer is 50 to 2000 nm. (7) The thin film EL device according to any one of (1) to (6), wherein the thickness of the insulating layer is 20 to 500 nm. (8) at least a substrate, an electrode layer containing silicon as a main component and having conductivity, and an insulating layer formed of an oxide of the electrode layer constituent material on the light emitting layer side of the electrode layer; A method for manufacturing a thin-film EL device, wherein a heat treatment is performed at a temperature of 600 ° C. or higher after forming a light emitting layer. (9) The method for manufacturing a thin film EL device according to the above (8), wherein the electrode layer and the light emitting layer are formed by a thin film manufacturing process.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION A thin film EL device according to the present invention comprises a substrate having at least a heat-resistant temperature or a melting point of at least 600 ° C., an electrode layer containing silicon as a main component and having conductivity, and a light emitting layer closer to the electrode layer. And a light emitting layer sandwiched between the insulating layer and another insulating layer, and another electrode layer formed on the other insulating layer on the side opposite to the light emitting layer.

As described above, by forming a pair of silicon-containing electrode layers on a heat-resistant substrate and forming a light-emitting layer between the electrodes, a flat electrode can be formed by a thin film process. A device that can withstand the annealing in the above can be formed. That is, by using thermally stable silicon as the electrode material, it is possible to withstand high-temperature processing and to suppress the occurrence of cracks due to hillocks. Insulation with the light-emitting layer can be ensured by an insulating layer formed of at least an oxide of a substance constituting the electrode layer, and an EL device can be formed with a simple structure. In addition, since a silicon electrode and an oxide insulating layer which is relatively stable are provided, insulation failure due to diffusion of these constituent materials between the electrode, the insulating layer, and the light emitting layer can be prevented.

Further, since the electrodes can be formed by a thin film process such as a vapor deposition method, a high-definition display can be obtained very easily, and the productivity is improved. Furthermore, by applying the surface flattening technology of a completed LSI or the like, extremely accurate flattening becomes possible, and the performance of the display is dramatically improved.

The substrate having a heat-resistant temperature or melting point of 600 ° C. or higher is not particularly limited as long as it has insulating properties and can maintain a predetermined strength without contaminating a silicon electrode layer formed thereon. Not something. In particular,
Alumina (Al ₂ O ₃ ), Forsterite (2MgO.
SiO _2), steatite (MgO · SiO _2), mullite _{(3Al 2 O 3 · 2SiO 2} ), beryllia (BeO),
Aluminum nitride (AlN), silicon nitride (Si
N) and a ceramic substrate such as silicon carbide (SiC + BeO). All of these heat resistant temperatures are 1000 ° C. or higher. Among these, an alumina substrate is particularly preferable, and when thermal conductivity is required, beryllia, aluminum nitride, silicon carbide and the like are preferable.

In addition, quartz, heat-resistant glass,
A thermally oxidized silicon wafer or the like can also be used.

The electrode layer, which is formed at least on the substrate side and exposed together with the light emitting layer under the high temperature of the heat treatment, has silicon as a main component. This silicon electrode layer may be polycrystalline silicon (p-Si) or amorphous (α-Si), and may be single-crystal silicon if necessary.

The electrode layer is doped with impurities in order to ensure conductivity, in addition to silicon as the main component. The dopant used as the impurity only needs to be able to secure predetermined conductivity, and a normal dopant used for a silicon semiconductor can be used. In particular,
Examples thereof include B, P, As, Sb, and Al. Among them, B, P, As, Sb, and Al are particularly preferable.
The concentration of the dopant is preferably about 0.001 to 5 at%.

The electrode layer is obtained by doping the above-described impurity into silicon, which is a main component, to impart conductivity and function as an electrode. The preferable resistivity of the electrode layer is preferably 1 Ω · cm or less, particularly 0.003 to 0.1 Ω · cm, in order to efficiently apply an electric field to the light emitting layer. The thickness of the electrode layer is preferably 50 to 2000 nm, particularly 100
About 1000 nm.

For forming the electrode layer, a vapor deposition method can be used. Examples of the vapor deposition method include a physical vapor deposition method such as a sputtering method and a vapor deposition method, and a chemical vapor deposition method such as a CVD method. Among these, a chemical vapor deposition method such as a CVD method is preferable.

In order to form a Si layer by the CVD method, first, silane (SiH ₄ ), silicon chloride or the like is used as a silicon source as a source gas, and another element, specifically, the above dopant is added to silicon as required. When including
The chloride, hydride, organic matter, etc. are used as a source.

As the silicon source, silicon fluoride such as SiF ₄ , silicon chloride such as SiCl ₄ , SiH ₄ , S
i ₂ H ₆ , Si ₃ H ₈ , SiH ₃ Cl, SiH ₂ Cl ₂ , S
Examples include silanes such as iHCl ₃ and SiCl ₄ .

As the dopant, B, P, As, S
There is no particular limitation as long as b and Al elements can be added. For example, arsines such as AsH ₃ , PH
Phosphine such as _3, phosphoric acid compounds such as POCl _3,
Diboranes such as B ₂ H ₆ , Al (CH ₃ ) ₃ , B (C
H ₃ ) _{3 and the} like are preferred. These reactive gases may be used alone or in combination of two or more. When two or more reactive gases are used in combination, the mixing ratio is arbitrary.

As carrier gas, H ₂ , H
e, Ar, etc. may be used. The reaction temperature is 500
The temperature may be set to about 1000 ° C.

As the chemical vapor deposition method, plasma CVD, normal pressure CVD, etc. may be used in addition to the ordinary low pressure CVD method. Further, the mixing ratio between the carrier gas and the source, the flow rate, and the like may be adjusted to optimal values according to the resistance value of the thin film silicon layer.

In addition to the above-described CVD method, a silicon layer can be formed by an EB vapor deposition method or an RF sputtering method as a physical vapor deposition method.

It is particularly preferable to use a transparent electrode such as ZnO or ITO for the other electrode layer when it is not exposed to a high temperature during the heat treatment. ITO is usually In ₂ O ₃
And SnO are contained in a stoichiometric composition, but the O amount may be slightly deviated from this. SnO for In ₂ O ₃
The mixing ratio of ₂ is preferably 1 to 20% by weight, more preferably 5 to 12% by weight. Also, ZnO for In ₂ O ₃ in IZO
Is usually about 12 to 32% by weight.

The thin film EL device of the present invention has an insulating layer between the above-mentioned electrode layer and the light emitting layer. This insulating layer is preferably formed of an oxide of the above-mentioned electrode material constituent material. As a method for forming an oxide of an electrode constituent material, a gas containing oxygen such as O ₂ gas may be introduced when forming the electrode. As described above, when the electrode material is formed, the film can be continuously formed from the electrode only by introducing the gas containing oxygen, and the manufacturing process can be simplified.

Further, a thermal oxidation method used in a semiconductor manufacturing process may be used. As the thermal oxidation method, any of a dry O ₂ oxidation method, a wet O ₂ oxidation method, and a steam oxidation method may be used. When the dry O ₂ oxidation method is used, Pb, HCl, Cl ₂ , C ₂ HCl ₃
May be mixed.

The thickness of the insulating layer using such an electrode constituting material is preferably 20 to 500 nm, particularly preferably 50 to 500 nm.
It is about 300 nm.

The insulating layer may be different from the oxide of the electrode constituting material. In particular, the insulating layer on the side of the other electrode (formed above the light emitting layer) that is not heat-treated is formed separately from the electrode forming step. In this case, the resistivity of the insulating layer is 10 ⁸ Ω · cm or more, particularly 10 ¹⁰ to 10 ¹⁸
It is about Ω · cm. Further, it is preferable that the substance has a relatively high dielectric constant, and the dielectric constant ε thereof is preferably about 3 to 1000.

When the insulating layer is formed separately from the electrodes, the constituent materials include, for example, silicon oxide (SiO ₂ ), silicon nitride (SiN), tantalum oxide (Ta ₂ O ₅ ), strontium titanate (SrTiO ₃ ), yttrium oxide (Y ₂ O _3), barium titanate (BaTiO _3), lead titanate (PbTiO _3), zirconia (Zr ₂ O _3),
Silicon oxynitride (SiON), alumina (Al ₂ O ₃ ), lead niobate (PbNbO ₃ ), and the like can be given. The method for forming the insulating layer with these materials is the same as the method for forming the electrode. In this case, the thickness of the insulating layer is preferably 50 to 1000 nm, particularly 100 to 1000 nm.
It is about 500 nm.

If necessary, after forming an insulating layer of a material for forming an electrode, the insulating layer may be further formed double using another material.

Examples of the material for the light emitting layer include the materials described in “Technical Trends of Recent Display, Monthly Display '98 April”, Tasaku Tanaka, pp. 1-10. Specifically, as materials for obtaining red light emission, such as ZnS, Mn / CdSSe, and the like, for obtaining green light emission, ZnS: TbOF, ZnS: Tb, Zn
S: As a material for obtaining blue light emission such as Tb, Sr
S: Ce, (SrS: Ce / ZnS) n, CaCa
₂ S ₄ : Ce, Sr ₂ Ga ₂ S ₅ : Ce and the like.

In order to obtain white light emission, Sr
S: Ce / ZnS: Mn and the like are known.

Of these, the IDW (Internati
onal Display Workshop) '97 X.Wu "Multicolor Thin-Fi
Particularly favorable results can be obtained by applying the present invention to an EL having a blue light emitting layer of SrS: Ce, which is discussed in "lm Ceramic Hybrid EL Displays" p593 to 596.

The thickness of the light emitting layer is not particularly limited, but if it is too thick, the driving voltage increases, and if it is too thin, the luminous efficiency decreases. Specifically, although it depends on the fluorescent material, it is preferably 100 to 1000 nm, particularly 150 to 50 nm.
It is about 0 nm.

The method for forming the light emitting layer may be in accordance with the method for forming the electrode layer. In addition, as described in the above-mentioned IDW, when the SrS: Ce light-emitting layer is formed by an electron beam evaporation method in an H ₂ S atmosphere, a high-purity light-emitting layer can be obtained. .

After the formation of the light emitting layer, a heat treatment is preferably performed. The heat treatment may be performed after the electrode layer, the insulating layer, and the light-emitting layer are stacked from the substrate side, or may be formed after forming the electrode layer, the insulating layer, the light-emitting layer, the insulating layer, or the electrode layer from the substrate side. Annealing may be performed. Usually, it is preferable to use the cap annealing method. The temperature of the heat treatment is preferably 600 to 1300 ° C, particularly about 800 to 1200 ° C, and the processing time is 10 to 600 minutes, particularly about 30 to 180 minutes. The atmosphere during the annealing treatment may be N ₂ , A
An atmosphere in which O ₂ is 0.1% or less in r, He or N ₂ is preferable.

Next, the manufacturing process of the thin film EL device of the present invention will be described with reference to the drawings. First, as shown in FIG. 1, a substrate 1 having a predetermined heat resistance or a high melting point is prepared. Next, as shown in FIG. 2, an electrode layer 2 of polycrystalline p-Si or the like is formed on the substrate 1 by, for example, a CVD method or the like. At this time, impurities are doped so as to have a predetermined conductivity.

Next, as shown in FIG. 3, the electrode layer 2 is formed in a predetermined pattern using a photolithographic technique. In this case, if a matrix display is to be formed, a pattern is formed such that the lower electrode layer 2 and an upper electrode layer 6, which will be described later, are vertically orthogonal to each other and each pixel is formed in that portion. Photolithography may follow a method generally used in semiconductor manufacturing technology.

Further, as shown in FIG. 3, the surface of the patterned silicon electrode layer is oxidized to form an insulating layer 3. For example, a thermal oxidation method can be used to form the insulating layer 3. Also, without directly oxidizing the electrode layer,
The insulator may have a relatively high dielectric constant and may be formed by CVD, sputtering, or the like.

Next, as shown in FIG. 4, a light emitting layer 4 is formed on the substrate 1 on which the lower insulating layer 3 is formed. The light emitting layer 4
As described above, it can be formed by the EB-evaporation method or the like. Then, as shown in FIG. 5, an upper insulating layer 5 is formed on the light emitting layer 4. Like the lower insulating layer 3, the insulating layer 5 may be formed continuously from an electrode forming material, or may be formed using a separate material.

Then, the substrate 1 on which the insulating layer 5 is formed
Is heat-treated. This heat treatment may be performed at the stage when the light emitting layer 4 is formed, or may be performed after the upper electrode layer 6 and the like are further formed on the upper insulating layer 5.

Next, as shown in FIG.
An upper electrode layer 6 is formed thereon. When the upper electrode layer 6 is formed after the heat treatment, the upper electrode layer 6 is not limited to the Si electrode, and a transparent conductive film or the like optimal for extracting light can be used. If necessary, the light transmittance may be increased by adjusting the thickness of the Si film, and this may be combined with an auxiliary electrode such as a metal.

Further, as shown in FIG. 7, the formed upper electrode 5 is patterned by using the photolithographic technique in the same manner as described above. FIG. 7 is a sectional view taken along the line A-
It corresponds to the portion viewed from the arrow A '(the same applies to FIG. 9 hereinafter).

Next, as shown in FIG. 8, a part of the lower insulating layer 3 is removed by photolithography,
A contact hole 2a is formed. Then, as shown in FIG. 9, an extraction electrode 7 is formed on the formed contact hole 2a and connected to the lower electrode 2 to obtain a thin film EL device.

In the above example, the case where only a single light-emitting layer is used has been described. However, the thin-film EL device of the present invention is not limited to such a structure. A plurality of light-emitting layers (pixels) may be combined in a matrix and may be arranged two-dimensionally in a matrix.

The thin-film EL device of the present invention can emit high-intensity blue light and has a high-definition R
A GB color display can be easily configured. Further, the manufacturing process is relatively easy, and the manufacturing cost can be kept low. Since efficient blue light emission with high luminance can be obtained, a white light emitting element may be combined with a color filter.

As the color filter film, a color filter used in a liquid crystal display or the like may be used, but the characteristics of the color filter are adjusted according to the light emitted from the EL element to optimize the extraction efficiency and the color purity. do it.

If a color filter capable of cutting off short-wavelength external light that is absorbed by the EL element material or the fluorescence conversion layer is used, the light resistance of the element and the display contrast are improved.

Further, an optical thin film such as a dielectric multilayer film may be used instead of the color filter.

The fluorescent conversion filter film absorbs the EL light and emits light from the phosphor in the fluorescent conversion film to convert the color of the emitted light. It is formed from a fluorescent material and a light absorbing material.

As the fluorescent material, basically, a material having a high fluorescence quantum yield may be used, and it is desirable that the material has a strong absorption in an EL emission wavelength region. In practice, laser dyes and the like are suitable, and rhodamine compounds, perylene compounds, cyanine compounds, phthalocyanine compounds (including subphthalocyanines, etc.) naphthaloimide compounds, condensed ring hydrocarbon compounds, condensed heterocyclic compounds A styryl compound, a coumarin compound or the like may be used.

As the binder, basically, a material that does not quench the fluorescence may be selected, and a binder that can be finely patterned by photolithography, printing, or the like is preferable. In the case where the transparent electrode (ITO, IZO) is formed on the substrate in contact with the transparent electrode, a material that does not damage the transparent electrode (ITO, IZO) is preferable.

The light absorbing material is used when the light absorption of the fluorescent material is insufficient, but may be omitted when unnecessary. As the light absorbing material, a material that does not quench the fluorescence of the fluorescent material may be selected.

The EL device of the present invention is generally provided with a pulse drive,
AC driving is performed, and the applied voltage is about 50 to 150V.

[0063]

Examples of the present invention will be described below. The EL structure used in the following examples has a structure in which a lower electrode, a lower insulating film, a light emitting layer, an upper insulating film, and an upper electrode are sequentially stacked on one surface of a substrate.

On one surface of the alumina substrate, a Si lower electrode was formed to a thickness of 800 nm by a plasma CVD method. The film forming conditions at this time are as follows. SiH ₄ : 100 SCCM B ₂ H ₆ / H ₂ : 150 SCCM Pressure: 0.3 Torr Temperature: 600 ° C. Growth rate: 10 nm / min

Next, the formed α-Si layer was subjected to solid phase growth to form a p-Si layer. The conditions at this time are as follows. N ₂ : 1 SLM Temperature: 600 ° C. Treatment time: 5 to 20 hours The obtained electrode layer had a resistivity of 4 × 10 ⁻² Ω · cm.

The surface of the formed p-Si electrode layer was thermally oxidized to form an insulating layer. Oxidation uses a dry oxidation method.
The conditions at that time are as follows. O ₂ : 500 SCCM Temperature: 1200 ° C Processing time: 20 minutes

The thickness of the formed SiO ₂ insulating layer is 10
It was 0 nm. The resistivity was 10 ¹⁶ Ω · cm or more.

Next, a SrS: Ce light emitting layer was formed to a thickness of 150 nm by EB-evaporation. As the film forming conditions, the pressure in the tank was reduced to 1.0 × 10 ⁻⁶ Torr, and SrS: C
The deposition rate of e was 1.5 to 3 nm / sec, and H ₂ S was continuously supplied during the deposition. SrS: Ce is 0.1
A material containing mol% was used.

Next, similarly, a ZnS: Mn light emitting layer was formed to a thickness of 150 nm. ZnS: Mn is Mn
Was used.

Next, a Y ₂ O ₃ insulating layer was formed on these light emitting layers to a thickness of 200 nm by RF sputtering.

The substrate on which the insulating layer was formed was transferred to a heat treatment layer and heat-treated at 1200 ° C. for 2 hours in a 100% N ₂ atmosphere.

Next, the film was returned to the sputtering apparatus, and an ITO upper transparent electrode was formed to a thickness of 200 nm by RF sputtering using ITO as a target.

The obtained thin-film EL device was placed under an Ar atmosphere.
When an AC voltage of 120 V and 3 kHz was applied, ITO
Observation from the electrode side confirmed white emission of 300 cd / m ² or more.

<Example 2> In Example 1, similar results were obtained even when the element doped into the Si electrode was changed from B to any of P, As, Sb, and Al.

[0075]

As described above, according to the present invention, it is possible to obtain a high-luminance blue light-emitting element having an electrode which is thermally stable and hard to cause a defect, and which emits white light, full color, and high definition. It is possible to realize a thin-film EL element which can be manufactured and which can be easily manufactured, and a manufacturing method thereof.

[Brief description of the drawings]

FIG. 1 is a partial sectional view showing a manufacturing process of a thin film EL device of the present invention.

FIG. 2 is a partial sectional view showing a manufacturing process of the thin-film EL device of the present invention.

FIG. 3 is a partial sectional view showing a manufacturing process of the thin-film EL device of the present invention.

FIG. 4 is a partial cross-sectional view showing a manufacturing process of the thin-film EL device of the present invention.

FIG. 5 is a partial sectional view showing a manufacturing process of the thin-film EL device of the present invention.

FIG. 6 is a partial cross-sectional view showing a manufacturing process of the thin-film EL device of the present invention.

7 is a partial cross-sectional view showing a manufacturing process of the thin-film EL element of the present invention, and corresponds to a cross-sectional view taken along the line AA 'in FIG.

FIG. 8 is a partial cross-sectional view illustrating a manufacturing process of the thin-film EL element of the present invention, and corresponds to a cross-sectional view taken along the line AA ′ of FIG.

9 is a partial cross-sectional view illustrating a manufacturing process of the thin-film EL element of the present invention, and corresponds to a cross-sectional view taken along the line AA 'in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 Lower electrode layer 3 Lower insulating layer 4 Light emitting layer 5 Upper insulating layer 6 Upper electrode layer 7 Extraction electrode

Continuation of the front page (72) Inventor Jun Hirabayashi 1-13-1 Nihonbashi, Chuo-ku, Tokyo FDT term in TDK Corporation (reference) 3K007 AB02 AB04 AB14 AB17 AB18 BB06 CA02 DA02 DA05 DB01 DB02 DC02 DC04 FA01 FA03

Claims (9)

[Claims] 1. A heat-resistant temperature or melting point of at least 600
° C. or higher substrate, an electrode layer containing silicon as a main component and having conductivity, an insulating layer closer to the light emitting layer than the electrode layer, and a light emitting layer sandwiched between the insulating layer and another insulating layer And a further electrode layer formed on a side of the other insulating layer opposite to the light emitting layer. 2. The thin film EL device according to claim 1, wherein said insulating layer is formed of an oxide of a material constituting an electrode layer. 3. The other insulating layer has a resistivity of 1 × 10 ⁸ Ω.
The thin-film EL device according to claim 1, wherein the device is made of a material having a dielectric constant of 3 or more. 4. The thin-film EL device according to claim 1, wherein the resistivity of the electrode layer is 1 Ω · cm or less. 5. The electrode layer is made of B, P, A on silicon.
5. The thin film EL device according to claim 1, wherein one or more of s, Sb and Al are doped. 6. The electrode layer has a thickness of 50 to 2000 nm.
The thin film EL device according to any one of claims 1 to 5, wherein 7. The thin-film EL device according to claim 1, wherein said insulating layer has a thickness of 20 to 500 nm. 8. At least a substrate, an electrode layer containing silicon as a main component and having conductivity, and an insulating layer formed on the light emitting layer side of the electrode layer and made of an oxide of the material constituting the electrode layer. And forming a light emitting layer, and then performing a heat treatment at a temperature of 600 ° C. or higher. 9. The method according to claim 8, wherein the electrode layer and the light emitting layer are formed by a thin film manufacturing process.