JP2000256860A - Double zone reactor for organometallic vapor growth device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form a film of a uniform compd. of >= three dimensions having high quality, in an organometallic vapor growth device, by linearly irradiating a wafer with plural gases to form a film in a film forming zone, modifying the passed wafer while being applied with the irradiation by radiant energy in an annealing zone adjacently set in a same container and repeating the film forming stage and the annealing stage. SOLUTION: A film forming zone 1 and an annealing zone 2 are adjacently set horizontally in the same reaction vessel 9 at intervals with a barrier 3, and a wafer 4 reciprocates between the film forming zone 1 and the annealing zone 2, by which film formation and annealing are alternately executed. Organometallic gas is fed from two linear gas irradiating nozzles set in parallel to the film forming zone 1 and is mixed with reaction gas flowed from the annealing zone 2 to form a film. In the annealing zone 2, the wafer 4 is modified by radiant energy from a radiation source 23 for annealing.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metalorganic vapor phase epitaxy apparatus, and more particularly, to a method requiring low-pressure vapor phase epitaxy at a low temperature. The present invention relates to a reactor used for forming a thin film of a ternary or more compound requiring annealing such as treatment.

[0002]

2. Description of the Related Art In a conventional metal organic chemical vapor deposition apparatus, a film forming apparatus and an annealing apparatus are separately provided, or are connected with a wafer transfer apparatus interposed therebetween. For this reason, the wafer is annealed after the film formation or carried to an annealing apparatus during the film formation.

In addition, gas irradiation has been performed by a shower-shaped nozzle which uniformly arranges small holes on a surface provided opposite to the wafer and discharges gas.

[0004]

In the conventional metalorganic vapor phase epitaxy apparatus, the film forming step and the annealing step are performed by separate apparatuses, respectively. When annealing is performed at an arbitrary film thickness during film formation, there is a problem that the number of transport steps increases. Also, the plurality of gases emitted from the shower-like nozzle are:
There is a problem in that the film thickness and the composition differ between the center and the outside as the wafer area increases due to the difference in the reaction conditions of each gas.

According to the present invention, a high quality compound thin film can be produced with high productivity by repeating annealing and surface reforming in the same reaction vessel during the film formation and repeating the film formation after the surface modification. The purpose is to provide evenly.

[0006]

In order to achieve the above object, in the dual zone reactor for a metal organic chemical vapor deposition apparatus of the present invention, a film forming apparatus and an annealing apparatus which have conventionally existed separately are provided. In one reaction vessel. A deposition zone and an annealing zone are installed adjacent to each other in the reaction vessel,
A barrier is provided between the deposition zones to prevent gas from flowing into the annealing zone between the zones, and the wafer holder reciprocates in both zones. The gas irradiation nozzles in the film forming zone are arranged linearly at right angles to the moving direction of the wafer. Heating of the wafer is performed by supplying radiant energy from the heat source on the back side, and in the annealing zone, radiant energy is supplied from the infrared source on the front side to perform surface modification treatment by heat, or from the ultraviolet source. The surface modification treatment is performed using radiant energy or radical reaction gas.

According to a specific case in which the present invention is embodied, a gas supplied to a film forming zone is linearly irradiated on a wafer surface from a gas irradiation nozzle, and the wafer is reciprocated to form a film over the entire surface. . At this time, the distribution of the film formed by the gas radiated linearly is not always flat, and the number of irregularities divided by the gas diverter is generated.
In order to alleviate the irregularities, another gas irradiation nozzle is placed in parallel and shifted to perform uniform film formation. That is, the film formation is performed by the two gas irradiation nozzles, and the unevenness of the film thickness is mutually compensated.

In the present invention, a film is formed by reciprocating a wafer with respect to a linear gas irradiation nozzle. For this reason, the distance between the gas irradiation nozzle and the exhaust port is constant in any part of the wafer. Thus, an increase in the wafer area can be dealt with by increasing the length of the gas irradiation nozzle and the length of the exhaust port, so that there is no difference in the reaction conditions.

According to the method of the present invention, gas is supplied to a gas diverter constituting a gas irradiation nozzle, and is diverted linearly by a groove in the gas diverter. A slit is screwed to the outlet of the gas distributor, and the slit is used to adjust the opening of the outlet of the distributor to divide the flow uniformly. The diverted gas passes through a gas rectifier in the shape of a square pipe to irradiate the wafer.

A plurality of gases are supplied to the reaction zone in the case of forming a compound, and some gases react with each other when mixed at room temperature. For this purpose, two sets of the gas distributor, the slit and the gas rectifier are prepared, joined back to back, and inserted with a plate heater. The two types of gases are separately supplied to the gas distributor. Usually, one gas irradiation nozzle is constituted by the two sets of gas flow dividers, the two sets of slits, the two sets of gas rectifiers, and the two sets of plate heaters.

In the present invention, a film is formed on the entire surface of the wafer by reciprocating the wafer. The film thickness due to one cycle of reciprocating movement is extremely thin, and is repeated until a predetermined film thickness is secured. Also, the wafer enters the annealing zone during one cycle of reciprocation.
Therefore, annealing can be performed with a small film thickness, so that the effect of surface modification is enhanced.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described with reference to the drawings based on embodiments. In FIG. 1, a film formation zone 1 is provided horizontally with two annealing zones 2 and two barriers 3 therebetween. The wafer 4 is placed on the wafer holding means 5 with the front surface facing downward, and the soaking plate 6 is placed on the back surface. The wafer holding means 5 is connected to the shaft 8 by the coupler 7 and reciprocates between the film forming zone 1 and the two annealing zones 2 by the driving means 10 installed outside the reaction vessel 9. . Above the wafer holding means 5, there is a heating means comprising an adhesion preventing plate 11 made of quartz, a heating source 12, a heat reflecting plate 13, a current introduction terminal 14, and a thermocouple 15.
Then, the soaking plate 6 is heated by the radiant energy, and the wafer 4 is indirectly heated. The carrier gas containing the organic metal was combined with the reaction vessel 9 by the bellows 16,
From the gas supply flange 17 through the gas supply pipe 18,
The gas is supplied to two gas irradiation nozzles 19. Film formation zone 1
In the above, the carrier gas containing the organic metal is supplied from the two annealing zones 2 to the barrier 3 and the wafer holding means 5.
Then, it mixes with the flowing reactant gas through the gap, and a thin film of the compound is formed on the surface of the wafer 4. The gas after the reaction is discharged from a gas exhaust pipe 21 through a gas exhaust port 20 inserted into two gas irradiation nozzles 19. In the annealing zone 2, the reaction gas is supplied from an opaque quartz gas shower nozzle 22 to the annealing zone 2.
Supplied to The wafer 4 that has moved to the annealing zone 2 approaches the gas shower nozzle 22 heated by radiant energy from the annealing radiation source 23 and is annealed. The annealing radiation source 23 includes:
You are using an infrared lamp.

In the embodiment shown in FIG. 2, the moving state of the wafer 4 is shown. (A) shows a state where the wafer 4 is in the annealing zone 2. (B) shows a state where the wafer 4 is in the film formation zone 1.
(C) shows that the wafer 4 has the other annealing zone 2
Is shown.

In the embodiment shown in FIG. 3, the gas diverter 24 and the plate heater
5 is shown. The two types of gases are separately supplied through the gas supply pipe 18 from both sides of the gas distributor 24. The gas diverter 24 is made of stainless steel and has therein a gas distribution groove 2 having a width of 5 mm and a depth of 3 mm.
6 are carved on both sides, separated by 2 mm. The gas enters from the gas supply unit 27, is divided into 16 at 10 mm intervals by the gas distribution groove 26, and can be adjusted in the opening 29 fixed with the slit screw 28.
The distribution amount is adjusted by the slit 30. Then, the gas distributor 24 is inserted by two plate heaters 25.

In the embodiment shown in FIG. 4, a gas irradiating nozzle 19 in which a gas rectifier 31 is attached to the gas diverter 24 is shown. The dispensed gas is 10 mm square, 80 mm long, secured by rectifier support 32.
It is illuminated through a millimeter, square pipe-shaped gas rectifier 31.

In the embodiment shown in FIG. 5, argon gas, which is an inert gas, is supplied to a gas supply port 33, and its flow rate is adjusted by an air-operated valve 34 and a mass flow meter 35. The organometallic raw material in a liquid state at room temperature is stored in a raw material container 36, kept at 30 ° C. in a thermostat 37, transported by bubbling argon gas, and supplied to a gas irradiation nozzle 19 through a gas supply pipe 18. Is done. At this time, the pressure of the organometallic raw material is maintained at atmospheric pressure by a pressure control valve 38 and a control pressure gauge 39. The organometallic raw material in a solid state at room temperature is housed in a raw material vaporizer 40 and placed in an oven 41 heated to 240 degrees. Argon gas is
Heated to 240 degrees by the heat exchanger 42. The heated argon gas is supplied to the raw material vaporizer 40 by opening and closing the high-temperature air-operated valve 43, and contains the organometallic raw material.
The gas is supplied to a gas irradiation nozzle 19 through a gas supply pipe 18 kept at a temperature of 250 degrees. In addition, a monitoring pressure gauge 44 is provided to monitor clogging of each gas pipe. Use stainless steel pipes and parts.
Metal gasket joints are used to connect the parts. The reaction gas, which is a gas at room temperature, is heated to 320 degrees by the gas heater 45 and supplied to the gas shower nozzle 22. The reaction gas is also supplied to the radical generator 46, and the active reaction gas is supplied to the gas shower nozzle 22.
Supplied to The gas after the reaction passes through the gas exhaust pipe 21, passes through the dust collector 47 and the reaction pressure control valve 48, and is exhausted by the vacuum pump 49.

[0017]

Since the present invention is configured as described above, it has the following effects.

Since the film formation zone and the annealing zone are disposed adjacent to each other in the same reaction vessel, the time required for transporting the wafer and the time required for raising and lowering the temperature can be eliminated.

Further, the annealing can be performed with a thin film thickness which is highly effective for the surface treatment.

Since the gas irradiation nozzle has a linear structure, it can easily cope with an increase in the wafer area. Further, since the gas distribution amount can be changed at any position of the nozzle, the film thickness distribution and the composition distribution can be uniformly adjusted according to the result of film formation.

Furthermore, since a plurality of gas irradiation nozzles can be installed in parallel, even gas that reacts with each other can be used separately.

The plurality of gas irradiation nozzles arranged in parallel can mutually compensate for unevenness in film thickness, and can form a uniform film.

[Brief description of the drawings]

FIG. 1 is a sectional view of a reactor according to the present invention. (A) Top view of section XX '(b) Cross section

FIG. 2 is a cross-sectional view showing a reciprocating movement of a wafer in a reactor. (A) shows a state where the wafer is in the annealing zone. (B) shows a state where the wafer is in the film formation zone. (C) shows a state where the wafer is in the other annealing zone.

FIG. 3 is a detailed view of a gas splitter of a gas irradiation nozzle. (A) Top view (b) XX 'sectional view (c) YY' sectional view

FIG. 4 is a detailed view of a gas irradiation nozzle in which a gas rectifier is attached to a gas diverter. (A) Top view (b) XX 'sectional view (c) YY' sectional view

FIG. 5 is a gas system diagram showing an embodiment of a metal organic chemical vapor deposition apparatus having a reactor of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Film-forming zone 2 Annealing zone 3 Barrier 4 Wafer 5 Wafer holding means 6 Heat equalizing plate 7 Coupler 8 Shaft 9 Reaction vessel 10 Driving means 11 Anti-adhesion plate 12 Heat source 13 Heat reflection plate 14 Current introduction terminal 15 Thermocouple 16 Bellows Reference Signs List 17 gas supply flange 18 gas supply pipe 19 gas irradiation nozzle 20 gas exhaust port 21 gas exhaust pipe 22 gas shower nozzle 23 annealing radiation source 24 gas splitter 25 plate heater 26 gas distribution groove 27 gas supply section 28 slit screw 29 Opening 30 Slit 31 Gas rectifier 32 Rectifier support 33 Gas supply port 34 Air-operated valve 35 Mass flow meter 36 Raw material container 37 Constant temperature bath 38 Pressure control valve 39 Control pressure gauge 40 Raw material vaporizer 41 Oven 42 Heat exchanger 43 High temperature air Operating valve 44 Monitoring pressure gauge 45 Gas heater 46 Radical generator 47 Dust collector 48 Reaction pressure control valve 49 Vacuum pump

Claims (11)

[Claims] 1. A reaction vessel forming a reaction chamber, wherein the reaction vessel comprises a film formation zone and an annealing zone,
A reaction container in which the film formation zone and the annealing zone are mechanically joined to each other; and a wafer holding means for holding a wafer having a first surface and a second surface, wherein the wafer holding means A driving unit reciprocating between a zone and the annealing zone; and a gas processing unit for the film forming zone, wherein a gas irradiation nozzle irradiates the gas to the first surface and exhausts the gas from the film forming zone. Gas treatment means, gas treatment means for the annealing zone, wherein a gas shower nozzle irradiates gas to the first surface and exhausts gas from the annealing zone; and Reforming means for reforming, and heating means for heating the wafer from the second surface, the wafer is formed in the film forming zone,
Moving to the annealing zone installed in the reaction vessel, the wafer is reformed in the annealing zone, and by repeating the film forming step and the reforming step, an organometallic vapor that forms a ternary or more compound film is formed. Reactor for phase growth equipment. 2. The method according to claim 1, wherein the reaction vessel comprises the film forming zone and the annealing zone, and the film forming zone is separated from the annealing zone by a barrier and is installed adjacent to the film. The reactor as described. 3. The reaction vessel wherein the reaction zone and the annealing zone are mechanically joined so that the film formation zone and the annealing zone share a horizontal plane or a vertical plane, and wherein the wafer holding means is provided on the horizontal plane. 2. The reactor according to claim 1, further comprising a driving unit that reciprocates between the film forming zone and the annealing zone along the vertical plane. 3. 4. The method according to claim 1, wherein the gas processing means in the film forming zone comprises a plurality of gas irradiation nozzles arranged in parallel to irradiate the wafer on the first surface with gas. A reactor according to claim 1, characterized in that: 5. Each of the gas irradiation nozzles has a gas diverter having a groove therein for diverting a gas, a slit for adjusting a diverted flow rate, and a gas rectifier for rectifying the diverted gas. 5. A gas diverter having a groove therein for diverting another set of gases on its side, a slit for adjusting a diverted flow, and a gas rectifier for rectifying the diverted gas. The reactor as described. 6. Each of said gas irradiation nozzles supplies a separate organometallic raw material and has a heating source which can be controlled at different temperatures, and the liquid or solid organometallic raw material at room temperature is supplied to an outlet of said gas irradiation nozzle. The reactor according to claim 4, wherein the reactor has a temperature gradient that is a gas. 7. The reactor according to claim 1, wherein the heating means for heating the wafer from the second surface is heated by a lamp supplying infrared radiation energy. 8. The method according to claim 1, wherein the reforming means of the annealing zone has a lamp for supplying infrared radiation energy and a heating plate for receiving the infrared radiation energy, wherein the first surface of the wafer is close to the heating plate. The reactor according to claim 1, wherein the reactor is reformed by: 9. The annealing zone modifying means has a lamp for supplying ultraviolet radiation energy, and the first surface of the wafer is modified by being directly irradiated with the ultraviolet radiation energy. The reactor according to claim 1, wherein 10. The method according to claim 1, wherein the wafer is glass, and a film containing CaGa2S4, SrS, ZnS and other impurity elements is formed at a pressure lower than the atmospheric pressure in the film formation zone. Reactor. 11. The wafer is made of silicon, and PbZrTiO3, SrBiTa is formed in the film formation zone.
2. The reactor according to claim 1, wherein a film containing O9, BaSrTiO3, and another impurity element is formed under atmospheric pressure.