JP2000252238A - Manufacture of semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form a semiconductor element having no deformation even when a wafer is divided by a brake blade. SOLUTION: In this manufacturing method, an electrode 40 is formed on the surface of a wafer 10 as not to be projected thereover, and scribe points are slided on the surface of the wafer 10 so that the electrodes are formed continuously thereon. Then a brake blade is pressed on the wafer 10 from the upper side of a scribe line so as to divide it into semiconductor elements. Since the scribe line is formed continuously, no crack is generated on the surface of the wafer 10 and the wafer 10 can be divided along the extension line of the scribe line 60 on the surface of the wafer 10. Therefore, a semiconductor element having no deformation and an almost rectangular and uniform shape can be manufactured.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device.

[0002]

2. Description of the Related Art With the diversification of functions of electronic devices, various semiconductor devices used in electronic devices, such as light-receiving devices and blue light-emitting devices, have been commercialized.

[0003] These semiconductor elements are generally manufactured by dividing one wafer formed by laminating various layers.

FIG. 3 is a sectional view of a main part of a conventional semiconductor wafer. An upper electrode 2 and a back electrode 3 are formed on the upper and lower surfaces of a wafer 1 formed by laminating n-type and p-type AlGaAs and the like. ing.

FIG. 4 is a back view of the semiconductor wafer 1. The back electrode 3 has a circular shape and is formed on the back surface of the wafer 1 at substantially equal intervals.

FIG. 5 is a top view of the semiconductor wafer 1. On the upper surface of the wafer 1, an upper electrode 2 having circular openings formed at substantially equal intervals is formed.

FIG. 6 shows a step of dividing the semiconductor wafer 1 into a plurality of semiconductor elements, which will be described below.

First, a scribe line 5 having a grid pattern is formed on the upper surface of the wafer 1 by sliding a scribe blade 4 having a cutting edge made of, for example, diamond on the upper surface of the wafer 1.

Subsequently, both ends of the wafer 1 are fixed by a metal plate 6, and a break blade 7 is pressed against the scribe line 5 from above the wafer 1 vertically to divide the wafer 1 into individual semiconductor elements.

In this way, a plurality of semiconductor elements are formed from one wafer.

[0011]

When the scribe line 5 is formed on the upper surface of the wafer 1, the scribe blade 4 sliding on the upper electrode 2 moves to the surface of the wafer 1 at a position lower than the upper electrode 2. At this time, since the scribe blade 4 slides on the surface of the upper electrode 2 at a high speed, the scribe blade 4 does not drop vertically from the electrode end of the upper electrode 2 to the surface of the wafer 1, and It falls on the surface of the wafer 1 located at a position away from the edge.

For this reason, the wafer 1 adjacent to the end of the upper electrode 2
A portion X where the scribe line 5 is not formed is generated near the surface as shown in FIG.

As described above, the break blade is pressed from above the surface of the wafer 1 on which the discontinuous scribe lines 5 are formed,
If one wafer is to be divided into individual semiconductor elements, a crack is generated at a portion of the wafer 1 that is not on the extension of the scribe line 5, and the divided individual semiconductor elements have a distorted shape.

For example, when a semiconductor element such as a light emitting element has a distorted shape, there is a problem that light emitting characteristics are different for each element.

[0015]

According to the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of: embedding an electrode in a concave portion formed on a wafer surface; forming a scribe line on the wafer surface; Cutting the wafer by cutting the wafer.

[0016]

1 (a) to 1 (i) show a manufacturing process of a semiconductor device to which the present invention is applied.

First, in a first step shown in FIG.
For example, the resist 20 is formed on the wafer 10 formed by laminating AlGaAs or the like, and the resist 20 is formed to a thickness of 2 to 3 μm on the wafer 10 by a spin coating method in which the wafer 10 is rotated.

In the subsequent second step (FIG. 1B), about 9
A pre-bake process is performed on the resist 20 at a temperature of 0 ° C. for about 2 to 3 minutes, and subsequently, the resist film is exposed using a photomask on which a predetermined pattern is drawn, and the wafer 10 is immersed in a developing solution. 20 is partially removed.
Thereafter, the resist 2 is heated at a temperature of about 110 ° C. for about 2 to 3 minutes.
The remaining resist 20 is cured by subjecting the remaining resist 20 to post-baking.

In the third step (FIG. 1C), a part of the wafer 10 is etched with an etching agent (for example, a mixed acid (H ₂ SO ₄ : H ₂ O ₂ : H) using the resist 20 as a mask.
_{2 O) = 3: 1:} 1) was removed using the wafer 10
Is formed with a recess 30 for forming an electrode.

Next, in a fourth step (FIG. 1D), the resist 20 is removed with a resist stripper.

In a fifth step (FIG. 1E), Au is vacuum-deposited on the wafer 10 to form an electrode 40 having a thickness of about 1 μm on the wafer 10.

In a sixth step (FIG. 1F), a resist 50 having a thickness of 2 to 3 μm is formed on the electrode 40 by vacuum evaporation.

In the seventh step (FIG. 1 (g)), about 90 ° C.
The resist 50 is subjected to a pre-bake process at a temperature of about 2 to 3 minutes, and the resist film is exposed using a photomask on which a predetermined pattern is drawn. The resist 50 is removed.

Thereafter, the resist 50 is post-baked at a temperature of about 110 ° C. for about 2 to 3 minutes,
The remaining resist 50 is cured.

In an eighth step (FIG. 1H), the electrode 40 whose surface is exposed is removed using an iodine-based etching solution (for example, a mixture of potassium iodide, iodine and water).

In the ninth step (FIG. 1 (i)), the resist 50 is removed using a resist stripper.

In the ninth step, the resist 50 was removed using a resist stripper.
The removal method is not limited to this.

Through the above steps, the wafer 10 having a substantially flat surface is manufactured.

Subsequently, by sliding a scribe point on the surface of the wafer 10 on the electrode 40 side, the wafer 1
A scribe line 60 as shown in FIG.

Since the scribe line 60 is formed by sliding a scribe point on the substantially flat surface of the wafer 10, the scribe line 60 is formed continuously on the surface of the wafer 10.

Then, a break blade is pressed against the wafer 10 from above the scribe line 60, and the wafer 1
0 is divided into individual semiconductor elements.

As a result, since the scribe lines are continuously formed, the wafer 10 can be divided along the extension of the scribe lines 60 on the surface of the wafer 10 without cracking on the surface of the wafer 10. . For this reason, it is possible to manufacture a semiconductor device having a substantially square and uniform shape without distortion.

As described above, an example of the method of manufacturing a semiconductor device having a flat wafer surface has been described in the present embodiment, but the method of flattening the wafer surface is not limited thereto.

Since the electrode 40 is formed on the wafer 10 by vapor deposition or etching, its surface is not exactly flat, but has some irregularities or wavy shapes. Is small, and the gradient is gentle, so that the sliding of the scribe blade is not affected.

For this reason, the scribe blade is connected to the electrode 40
A continuous scribe line can be formed on the surface of the substrate.

[0036]

Even if the wafer is divided by the break blade,
A semiconductor element without distortion can be formed.

[0037]

[Brief description of the drawings]

FIG. 1 is a view showing manufacturing steps (a) to (i) of a semiconductor device which is an embodiment to which the present invention is applied.

FIG. 2 is a perspective view of a surface of a semiconductor wafer manufactured according to the embodiment.

FIG. 3 is a sectional view of a main part of a conventional semiconductor wafer.

FIG. 4 is a back view of a conventional semiconductor wafer.

FIG. 5 is a top view of a conventional semiconductor wafer.

FIG. 6 is a view showing a process of dividing a wafer into individual semiconductor elements according to the prior art.

FIG. 7 is a perspective view of a wafer surface on which scribe lines are formed by a conventional technique.

[Explanation of symbols]

 Reference Signs List 1 wafer 2 top electrode 3 back electrode 4 scribe blade 5 scribe line 6 metal plate 7 break blade 10 wafer 20 resist 30 recess 40 electrode 50 resist 60 scribe line

Claims (2)

[Claims] 1. A method of manufacturing a semiconductor device, comprising: embedding an electrode in a concave portion formed on a surface of a wafer, forming a scribe line on the surface of the wafer, and cutting the wafer along the scribe line. Method. 2. A first step of forming a first resist on a semiconductor wafer, a second step of removing a part of the first resist by exposure and development, and a part of the wafer by etching. A third step of forming a recess, a fourth step of removing the first resist, a fifth step of forming an electrode on the wafer, and a fifth step of forming a second resist on the electrode. A sixth step of removing the second resist formed other than immediately above the concave portion by exposure and development, an eighth step of removing an electrode other than immediately below the second resist by etching, A ninth step of removing the second resist, a tenth step of forming a scribe line using a scribe point on the wafer surface, and an eleventh step of dividing the wafer along the scribe line by a break blade A method for manufacturing a semiconductor device, comprising the steps of: