JP2000250059A - Passive matrix type liquid crystal device - Google Patents

Passive matrix type liquid crystal device

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Publication number
JP2000250059A
JP2000250059A JP11054605A JP5460599A JP2000250059A JP 2000250059 A JP2000250059 A JP 2000250059A JP 11054605 A JP11054605 A JP 11054605A JP 5460599 A JP5460599 A JP 5460599A JP 2000250059 A JP2000250059 A JP 2000250059A
Authority
JP
Japan
Prior art keywords
liquid crystal
crystal device
metal
wiring electrode
conductive member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11054605A
Other languages
Japanese (ja)
Inventor
Takayoshi Hanami
孝義 葉波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP11054605A priority Critical patent/JP2000250059A/en
Publication of JP2000250059A publication Critical patent/JP2000250059A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To obtain a passive matrix type liquid crystal device having good display quality, excellent corrosion resistance, large number of pixels and narrow frames while suppressing production of failures due to short circuits, discontinuity of lines or the like, and with excellent productivity at a low cost by forming a wiring electrode pattern consisting of a metal-based conductive member on the inner face of a pair of substrates. SOLUTION: A wiring electrode pattern 2 consisting of a metal-based conductive member is formed. That is, a film of the metal-based conductive member is formed by sputtering all over the one surface of a substrate 1. Then a resist liquid is applied thereon, subjected to photolithographic processes such as exposing, developing, etching and peeling to form a desired wiring electrode pattern. Then an ITO transparent conductive film is formed by sputtering on the surface of the substrate where the wiring electrode is formed, and then subjected to the same photolithographic processes to form pixel electrodes 3. As for the counter substrate, a substrate having a pattern formed only of an ITO transparent conductive film is preferably used.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明はパッシブマトリクス
型液晶装置に用いられるガラス基板や有機フィルム等の
基板上に形成する配線電極に関するものである。
The present invention relates to a wiring electrode formed on a substrate such as a glass substrate or an organic film used in a passive matrix type liquid crystal device.

【0002】[0002]

【従来の技術】近年、電気光学装置、特に液晶表示装置
においては、急速に高密度・高精細化が進み、携帯機器
用のパッシブマトリクス型液晶装置においても、小さな
外形サイズの中に、より多くの画素とより大きな表示領
域(=多画素・狭額縁)を確保することが必要となって
いる。
2. Description of the Related Art In recent years, electro-optical devices, particularly liquid crystal display devices, have been rapidly increasing in density and definition, and even in passive matrix type liquid crystal devices for portable equipment, more and more devices have been installed in a small external size. Pixels and a larger display area (= multiple pixels / narrow frame) must be secured.

【0003】このような安価なパッシブマトリクス型液
晶装置においては、透明導電膜であるITOを、フォト
リソ法によりパターニングすることで、画素電極ならび
に配線電極を形成するのが一般的である。また、ガラス
基板上に駆動用半導体素子を搭載したCOG(Chip
OnGlass,チップ・オン・グラス)方式の液晶
装置では、駆動用半導体を駆動させるだけの十分な電流
量を確保するため、ITO透明導電膜の上にNi−P系
もしくはNi−B系等のめっき膜及びそれらを組み合わ
せた膜の上に、Au等の金属を蒸着法やスパッタ法もし
くは無電解めっき法等により形成する構造が提案されて
いる(特開平3−64869号、特開昭63−2553
77号参照)。
In such an inexpensive passive matrix type liquid crystal device, it is common to form a pixel electrode and a wiring electrode by patterning ITO, which is a transparent conductive film, by a photolithography method. In addition, a COG (Chip) in which a driving semiconductor element is mounted on a glass substrate
In an OnGlass (chip-on-glass) type liquid crystal device, in order to secure a sufficient amount of current to drive the driving semiconductor, Ni-P or Ni-B plating is performed on the ITO transparent conductive film. There has been proposed a structure in which a metal such as Au is formed on a film or a film obtained by combining them by a vapor deposition method, a sputtering method, an electroless plating method, or the like (Japanese Patent Laid-Open No. 3-64869, Japanese Patent Laid-Open No. 63-2553).
No. 77).

【0004】[0004]

【発明が解決しようとする課題】しかしながら、前述の
ようにITO透明導電膜を、極微細パターニングするに
は限界がある。ひとつは、化学的安定性の良さに起因す
るものである。ITO透明導電膜のパターニングは、通
常加温した塩酸系エッチング液か塩化第二鉄系エッチン
グ液で行われている。しかし、ITO透明導電膜のエッ
チング性は、同じ透明導電膜である酸化錫に比べれば悪
くないものの、加工性は、決して良いとは言ない。その
結果、高密度・高精細化により、画素や配線電極の間隙
を小さくすればするほど、エッチング不良によるショー
トやオーバーエッチングによるが断線が発生し易く、歩
留り良く配線を形成するのが困難となる。
However, as described above, there is a limit to ultrafine patterning of an ITO transparent conductive film. One is due to the good chemical stability. Patterning of the ITO transparent conductive film is usually performed with a heated hydrochloric acid-based etching solution or a ferric chloride-based etching solution. However, although the etching property of the ITO transparent conductive film is not bad as compared with tin oxide which is the same transparent conductive film, the workability is not necessarily good. As a result, due to high density and high definition, the smaller the gap between the pixel and the wiring electrode, the more likely it is that disconnection occurs due to short-circuiting or over-etching due to poor etching, making it difficult to form wiring with good yield. .

【0005】さらに、高密度・高精細化のため配線電極
の配線幅を細くすることにより、ITO透明電極のもつ
比較的大きな抵抗値(10〜200Ω/□)は無視でき
なくなり電圧降下、電流不足等を引き起こし、ひいては
表示画質を低下させてしまうこととなる。また、上述の
ITO透明導電層の上にNi−P系もしくはNi−B系
等膜及びそれらを組み合わせた膜の上に、Au等の金属
を形成する構造は、抵抗値の問題を解決するのに有効な
手段となるものの、ITO透明導電膜を極微細パターニ
ングすることに変わりなく、歩留り良く配線を形成する
のは難しい。
[0005] Further, by reducing the width of the wiring electrode for high density and high definition, the relatively large resistance value (10 to 200 Ω / □) of the ITO transparent electrode cannot be ignored, and the voltage drop and the current shortage occur. And so on, and eventually the display quality is degraded. Further, the above-described structure in which a metal such as Au is formed on a film of Ni-P or Ni-B based on the ITO transparent conductive layer and a film obtained by combining them can solve the problem of the resistance value. However, it is difficult to form a wiring with a high yield, as is the case with ultra-fine patterning of an ITO transparent conductive film.

【0006】加えて、表面に形成したAu等の金属は、
硬度が低いためキズ付きやすく、キズ部から腐食が進行
するため、取り扱いに注意を要することになる。したが
って、本発明は上記事情に鑑みて完成されたものであ
り、その目的はショートや断線等による不良発生を抑制
しつつ、耐腐食性に優れた多画素・狭額縁のパッシブマ
トリクス型液晶装置を優れた量産性により、低コストで
得られるようにすることである。
In addition, a metal such as Au formed on the surface is
Since the hardness is low, it is easily scratched, and corrosion proceeds from the scratched portion, so that care must be taken in handling. Accordingly, the present invention has been completed in view of the above circumstances, and an object of the present invention is to provide a multi-pixel, narrow-frame, passive-matrix liquid crystal device with excellent corrosion resistance while suppressing the occurrence of defects due to short-circuiting, disconnection, and the like. It is to be able to obtain at low cost by excellent mass productivity.

【0007】[0007]

【課題を解決するための手段】上記課題を解決するため
に、本発明は、金属系導電性部材からなる配線電極パタ
ーンを形成することにした。金属系導電性部材は、IT
O透明導電膜に比べ抵抗値は低いため、配線抵抗による
電圧降下等を軽減できるため、配線電極の幅をより細く
することができる。
In order to solve the above-mentioned problems, the present invention is to form a wiring electrode pattern made of a metal-based conductive member. Metallic conductive members are IT
Since the resistance value is lower than that of the O transparent conductive film, a voltage drop or the like due to wiring resistance can be reduced, so that the width of the wiring electrode can be further reduced.

【0008】さらに、蒸着法やスパッタ法等により容易
に製膜でき、エッチング性に優れた材料とすることでパ
ターニングが容易となり、安価に歩留り良く電極間隙の
狭い配線電極を形成できる。また、硬度が高く常温で空
気や水に侵されない材料を用いることで、耐腐食性を向
上でき、信頼性が向上することはもとより、製造工程を
簡略化することができる。
Further, a film can be easily formed by a vapor deposition method, a sputtering method, or the like, and by using a material having excellent etching properties, patterning becomes easy, and a wiring electrode with a narrow electrode gap can be formed at low cost with good yield. In addition, by using a material having high hardness and not being affected by air or water at normal temperature, corrosion resistance can be improved and reliability can be improved, and the manufacturing process can be simplified.

【0009】特に、金属クロムは、広く一般工業製品に
用いられている材料であり、入手性加工性等に優れると
いう特徴を有する。COG方式の液晶装置では、駆動用
半導体を駆動させるだけの十分な電流量を流すことが出
来、良好な表示品質を確保することができる。上記のよ
うに構成された液晶装置は、多画素・狭額縁のパッシブ
マトリクス型液晶装置であるのにも関わらず、容易に歩
留り良く製造することが可能となった。
In particular, metal chromium is a material widely used in general industrial products, and is characterized by excellent availability and processability. In a COG liquid crystal device, a sufficient amount of current can be supplied to drive a driving semiconductor, and good display quality can be ensured. The liquid crystal device configured as described above can be easily manufactured with high yield despite being a multi-pixel, narrow-frame, passive-matrix liquid crystal device.

【0010】[0010]

【発明の実施の形態】以下に本発明の実施例を図面に基
づいて説明する。 (実施例1)図1は、本発明による液晶装置に用いる基
板の第1の実施例を示す平面模式図である。基板1は、
まず一方の表面の全面にスパッタ法により金属系導電性
部材を製膜する。ここでは、金属系導電性部材として金
属クロムを用いた。製膜法は、スパッタ法に限らず、蒸
着法やイオンプレーティング法等であっても良い。次に
レジスト液を同表面に塗布した後、露光・現像・エッチ
ング・剥離といったフォトリソ工程により、所望の配線
電極パターン2を形成した。なお、パターン形成には、
より高精細・高精度を要求される場合は、フォトリソ法
に限らず、エレクトロンビーム等により、直接パターン
を形成しても良い。次いで、配線電極を形成した基板表
面に、ITO透明導電膜をスパッタ法により製膜し、同
様にフォトリソ法により、画素電極3を形成した。この
際、配線電極の一部をITO透明導電膜で形成しても構
わない。対向基板には、金属系電性部材で配線電極を形
成した上述と同様の基板を用いても良いが、安価に製造
するには、ITO透明導電膜のみでパターンを形成した
ものを用いることが望ましい。またここでは、対向基板
上のITO透明導電膜パターンと一部の対応する金属系
電性部材による配線電極パターンは、上下導通材たとえ
ばプラスチックビーズの表面に金などの金属で被覆した
ものやAg等のペーストにより電気的に接続して、一方
の基板上にのみ接続用端子を設けるようにしている。
(但し、この構造に限るものでない。)図2(a)は、
本発明による液晶装置に用いる液晶パネルの平面模式
図、図2(b)は、従来の液晶装置に用いられている液
晶パネルの平面模式図である。本発明によると、図のご
とく、極微細パターンの形成により、配線電極部7の面
積を小さくすることができ、その結果、同じ外形サイズ
の基板を用いた場合、大きな表示画面を得ることができ
る。
Embodiments of the present invention will be described below with reference to the drawings. (Embodiment 1) FIG. 1 is a schematic plan view showing a first embodiment of a substrate used in a liquid crystal device according to the present invention. Substrate 1
First, a metal conductive member is formed on the entire surface of one surface by a sputtering method. Here, metallic chromium was used as the metallic conductive member. The film forming method is not limited to the sputtering method, but may be an evaporation method, an ion plating method, or the like. Next, after a resist solution was applied on the same surface, a desired wiring electrode pattern 2 was formed by a photolithography process such as exposure, development, etching, and peeling. In addition, in pattern formation,
When higher definition and higher precision are required, the pattern may be directly formed by an electron beam or the like, without being limited to the photolithography method. Next, an ITO transparent conductive film was formed on the surface of the substrate on which the wiring electrodes were formed by a sputtering method, and the pixel electrodes 3 were similarly formed by a photolithography method. At this time, a part of the wiring electrode may be formed of the ITO transparent conductive film. The opposite substrate may be the same substrate as described above in which the wiring electrodes are formed of a metal-based conductive member. However, for inexpensive production, it is preferable to use a substrate formed with a pattern using only the ITO transparent conductive film. desirable. In this case, the wiring electrode pattern made of a metallic conductive member corresponding to a part of the ITO transparent conductive film pattern on the opposing substrate is made of a vertically conductive material such as a plastic bead whose surface is coated with a metal such as gold, Ag or the like. Are electrically connected by the paste described above, and connection terminals are provided only on one of the substrates.
(However, the present invention is not limited to this structure.) FIG.
FIG. 2B is a schematic plan view of a liquid crystal panel used in a conventional liquid crystal device, and FIG. 2B is a schematic plan view of a liquid crystal panel used in a conventional liquid crystal device. According to the present invention, as shown in the figure, the area of the wiring electrode portion 7 can be reduced by forming an extremely fine pattern, and as a result, a large display screen can be obtained when substrates having the same external size are used. .

【0011】(実施例2)同様な方法により配線電極を
形成した。金属系導電部材に製膜が容易でエッチング性
に優れた材料を用いているため、安価に、そして容易に
極微細パターンの配線電極を形成することができる。 (実施例3)同様な方法により配線電極を形成した。金
属系導電部材に硬度が高く常温付近で空気や水に侵され
ない材料を用いているため、表面のキズ発生がなく、金
属系導電部材の表面に酸化防止膜を設ける必要もないた
め、製造工程の簡略化とハンドリング性が向上し、ひい
ては安価に極微細パターンの配線電極を形成することが
できる。
Example 2 A wiring electrode was formed in the same manner. Since a material which is easy to form a film and has excellent etching properties is used for the metal-based conductive member, a wiring electrode having an extremely fine pattern can be easily formed at low cost. (Example 3) Wiring electrodes were formed in the same manner. Since the metal-based conductive member is made of a material that is hard and does not corrode with air or water at around normal temperature, there is no scratch on the surface, and there is no need to provide an antioxidant film on the surface of the metal-based conductive member. This improves the simplification of the process and improves the handleability, and as a result, can form an extremely fine pattern wiring electrode at low cost.

【0012】(実施例4)同様な方法により配線電極を
形成した。金属系導電部材に金属クロムを用いている。
金属クロムの比抵抗は高く(表−1に、主な金属の比抵
抗値を示す)、Al、Cu、Auといった他の金属と比
べて、決して良好な電導性を示す物質ではないため、一
般に配線用材料に用いられることはないが、製膜が容易
でエッチング性に優れ、硬度が高く常温付近で空気や水
に侵されないという性質を有している。また、広く一般
工業製品に用いられている材料であり、入手性に優れ
る。よって、安価に極微細パターンの配線電極を形成す
ることができる。
Example 4 A wiring electrode was formed in the same manner. Metal chromium is used for the metal-based conductive member.
Since the specific resistance of metallic chromium is high (the specific resistance values of the main metals are shown in Table 1), it is not a material exhibiting good electrical conductivity compared to other metals such as Al, Cu, and Au. Although it is not used as a wiring material, it is easy to form a film, has excellent etching properties, has high hardness, and has a property that it is not eroded by air or water at around normal temperature. Further, it is a material widely used in general industrial products, and is excellent in availability. Therefore, a wiring electrode having an extremely fine pattern can be formed at low cost.

【0013】(実施例5)同様な方法により配線電極を
形成した。金属系導電部材に金属クロムを用いて、その
膜厚を500オングストロームとした。このように製膜
した金属クロムのシート抵抗値は、約5Ω/□であっ
た。ITO透明導電膜のシート抵抗は、10〜200Ω
/□であるため、これ以上の膜厚を有する金属クロムを
用いれば、抵抗値を低く抑えつつ、極微細パターンの配
線電極を得ることが出来る。
Example 5 A wiring electrode was formed in the same manner. Metallic chromium was used for the metal-based conductive member, and its film thickness was set to 500 Å. The sheet resistance of the metal chromium thus formed was about 5Ω / □. The sheet resistance of the ITO transparent conductive film is 10 to 200Ω.
/ □, the use of metal chromium having a film thickness of more than this makes it possible to obtain a wiring electrode having an extremely fine pattern while keeping the resistance value low.

【0014】(実施例6)同様な方法により配線電極を
形成した。ここでは、同時に駆動用半導体素子のための
配線電極も形成している。このように配線電極を形成し
た場合、駆動要半導体を駆動させるだけの十分な電流量
を容易に確保できるが、新たに工程を追加する必要がな
く、表示品質に優れた液晶装置が得られる。
Example 6 A wiring electrode was formed in the same manner. Here, wiring electrodes for the driving semiconductor element are also formed at the same time. When the wiring electrodes are formed in this manner, a sufficient amount of current for driving the semiconductor requiring driving can be easily secured, but a new process does not need to be added, and a liquid crystal device having excellent display quality can be obtained.

【0015】[0015]

【発明の効果】以上のように本発明によれば、ショート
や断線等による不良発生を抑制しつつ、表示品質の良
い、耐腐食性に優れた多画素・狭額縁のパッシブマトリ
クス型液晶装置を優れた量産性により、低コストで得ら
れるようになる。
As described above, according to the present invention, a multi-pixel, narrow-frame, passive-matrix liquid crystal device having good display quality and excellent corrosion resistance while suppressing the occurrence of defects due to short-circuiting, disconnection, etc. Excellent mass productivity enables low cost production.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明による液晶装置に用いる基板の平面模式
図である。
FIG. 1 is a schematic plan view of a substrate used in a liquid crystal device according to the present invention.

【図2】(a)本発明による液晶装置に用いる液晶パネ
ルの平面模式図である。 (b)従来の液晶装置に用いられる液晶パネルの平面模
式図である。
FIG. 2A is a schematic plan view of a liquid crystal panel used in a liquid crystal device according to the present invention. (B) It is a plane schematic diagram of the liquid crystal panel used for the conventional liquid crystal device.

【符号の説明】[Explanation of symbols]

1 基板 2 配線電極パターン 3 画素電極 4 配線電極部 5 表示画面 DESCRIPTION OF SYMBOLS 1 Substrate 2 Wiring electrode pattern 3 Pixel electrode 4 Wiring electrode part 5 Display screen

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 一対の基板間に液晶混合物を挟持してな
るパッシブマトリクス型液晶装置において、前記一対の
基板の内面に、金属系導電性部材からなる配線電極パタ
ーンが形成されていることを特徴とする液晶装置。
1. A passive matrix liquid crystal device having a liquid crystal mixture sandwiched between a pair of substrates, wherein a wiring electrode pattern made of a metal-based conductive member is formed on inner surfaces of the pair of substrates. Liquid crystal device.
【請求項2】 前記金属系導電性部材が、製膜が容易で
エッチング性に優れた材料であることを特徴とする請求
項1記載の液晶装置。
2. The liquid crystal device according to claim 1, wherein the metal-based conductive member is a material which is easy to form a film and has excellent etching properties.
【請求項3】 前記金属系導電性部材が、硬度が高く常
温付近で空気や水に侵されない材料であることを特徴と
する請求項1、2記載の液晶装置。
3. The liquid crystal device according to claim 1, wherein the metal-based conductive member is made of a material having a high hardness and not being affected by air or water at around normal temperature.
【請求項4】 前記金属系導電性部材が、金属クロムで
あることを特徴とする請求項1乃至3いずれか1項記載
の液晶装置。
4. The liquid crystal device according to claim 1, wherein the metal-based conductive member is metal chromium.
【請求項5】 前記金属クロムの膜厚が、少なくとも5
00オングストローム以上であることを特徴とする請求
項4記載の液晶装置。
5. The method according to claim 1, wherein the thickness of the metallic chromium is at least 5
5. The liquid crystal device according to claim 4, wherein the thickness is not less than 00 angstroms.
【請求項6】 前記基板上に駆動用半導体素子を搭載し
たことを特徴とする請求項1乃至5いずれか1項記載の
液晶装置。
6. The liquid crystal device according to claim 1, wherein a driving semiconductor element is mounted on the substrate.
JP11054605A 1999-03-02 1999-03-02 Passive matrix type liquid crystal device Pending JP2000250059A (en)

Priority Applications (1)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022022112A1 (en) * 2020-07-29 2022-02-03 京东方科技集团股份有限公司 Electronic paper display screen and manufacturing method therefor, and display device
US12124148B2 (en) 2020-07-29 2024-10-22 Beijing Boe Optoelectronics Technology Co., Ltd. Electronic paper display screen and manufacturing method therefor, and display device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022022112A1 (en) * 2020-07-29 2022-02-03 京东方科技集团股份有限公司 Electronic paper display screen and manufacturing method therefor, and display device
CN114089568A (en) * 2020-07-29 2022-02-25 京东方科技集团股份有限公司 Electronic paper display screen, preparation method thereof and display device
US12124148B2 (en) 2020-07-29 2024-10-22 Beijing Boe Optoelectronics Technology Co., Ltd. Electronic paper display screen and manufacturing method therefor, and display device

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