JP2000244211A - Waveguide connection package - Google Patents
Waveguide connection packageInfo
- Publication number
- JP2000244211A JP2000244211A JP11042334A JP4233499A JP2000244211A JP 2000244211 A JP2000244211 A JP 2000244211A JP 11042334 A JP11042334 A JP 11042334A JP 4233499 A JP4233499 A JP 4233499A JP 2000244211 A JP2000244211 A JP 2000244211A
- Authority
- JP
- Japan
- Prior art keywords
- waveguide
- cavity
- package
- equation
- connection package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Landscapes
- Waveguide Connection Structure (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、マイクロ波半導体
素子実装用の導波管接続パッケージに関する。The present invention relates to a waveguide connection package for mounting a microwave semiconductor device.
【０００２】[0002]
【従来の技術】従来の導波管接続パッケージを図６を用
いて説明する。図６（ａ）は信号の伝搬方向と直交し、
且つ、半導体素子の実装面に平行な方向から見た断面図
であり、図６（ｂ）は上蓋をする前のパッケージ本体を
上から見た図である。2. Description of the Related Art A conventional waveguide connection package will be described with reference to FIG. FIG. 6A is orthogonal to the signal propagation direction,
FIG. 6B is a cross-sectional view of the package body as viewed from a direction parallel to the mounting surface of the semiconductor element. FIG.
【０００３】導波管接続パッケージの本体は、半導体素
子６を実装する本体下部１と上蓋２とから構成される。
本体下部１には、キャビティ８が形成され、導波管モー
ド(TE01)をマイクロストリップ線路の準TEMモードに変
換する導波管−マイクロストリップ変換（マイクロスト
リップ）５ａ、５ｂと半導体素子６とが実装される。導
波管−マイクロストリップ変換５ａ、５ｂと半導体素子
６との間はボンディングワイヤ７ａ、７ｂで接続され
る。また、上蓋２には、導波管−マイクロストリップ変
換５ａ、５ｂでの変換を効率よく行うようにショート面
４ａ、４ｂが形成される。導波管−マイクロストリップ
変換５ａ、５ｂにて、導波管モードは完全にマイクロス
トリップモードに変換されないために、導波管３ａ、３
ｂから漏れてくる電磁波が、半導体素子６を実装するキ
ャビティ８内を伝搬する。その結果、半導体素子６の入
出力間のアイソレーション特性の劣化、性能の劣化を起
こすという問題があった。従来構造では、半導体素子６
を実装するキャビティ８の横幅（信号の伝搬方向と直交
し、且つ、実装面に平行な方向）を小さくすることで、
キャビティ８内での伝搬を遮断する、或いは、キャビテ
ィ８の内側に電波吸収体を設けていた。[0005] The main body of the waveguide connection package is composed of a main body lower part 1 on which a semiconductor element 6 is mounted and an upper lid 2.
In the lower part 1 of the main body, a cavity 8 is formed, and waveguide-microstrip conversions (microstrips) 5a and 5b for converting a waveguide mode (TE 01 ) into a quasi-TEM mode of a microstrip line, and a semiconductor element 6 Is implemented. The waveguide-to-microstrip converters 5a and 5b and the semiconductor element 6 are connected by bonding wires 7a and 7b. In addition, short surfaces 4a and 4b are formed on the upper lid 2 so that conversion by the waveguide-microstrip converters 5a and 5b is performed efficiently. In the waveguide-microstrip converters 5a and 5b, the waveguide mode is not completely converted to the microstrip mode.
The electromagnetic wave leaking from b propagates in the cavity 8 in which the semiconductor element 6 is mounted. As a result, there is a problem that isolation characteristics between input and output of the semiconductor element 6 are deteriorated and performance is deteriorated. In the conventional structure, the semiconductor element 6
Is reduced by reducing the width of the cavity 8 (in the direction perpendicular to the signal propagation direction and parallel to the mounting surface) in which
The propagation in the cavity 8 is blocked, or a radio wave absorber is provided inside the cavity 8.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、キャビ
ティ内での伝搬を遮断させようとすると、キャビティの
横幅を小さくする必要がある。しかも、高周波になるほ
ど横幅の縮小が必要で、例えば、76GHzではキャビティ
の横幅は2mm以下となる。すなわち、半導体素子を実装
するためのスペースを狭くする必要があり、実装が容易
でなく歩留まりを低下させるといった問題や、物理的に
実装出来る半導体素子のサイズが制限され、サイズの大
きい集積回路を実装することが困難になるといった問題
があった。また、電波吸収体を用いる場合においても、
十分に電磁波を吸収することが難しい場合があったり、
広帯域に漏れ電磁波を吸収することが難しいという課題
がある。However, in order to block propagation in the cavity, it is necessary to reduce the width of the cavity. Moreover, the higher the frequency, the smaller the width is required. For example, at 76 GHz, the width of the cavity becomes 2 mm or less. In other words, it is necessary to reduce the space for mounting the semiconductor element, and it is difficult to mount the semiconductor element, and the yield is reduced. Also, the size of the semiconductor element that can be physically mounted is limited, and a large-sized integrated circuit is mounted. There was a problem that it became difficult to do. Also, when using a radio wave absorber,
It may be difficult to absorb electromagnetic waves sufficiently,
There is a problem that it is difficult to absorb leakage electromagnetic waves in a wide band.
【０００５】本発明は、上述した事情に鑑みてなされた
もので、高周波半導体素子実装用導波管接続パッケ−ジ
において、半導体素子を実装するキャビティの寸法を制
限することなく、アイソレーション特性の劣化、性能の
劣化の要因となる導波管からキャビティ内への漏れ電磁
波を防ぐことのできる導波管接続パッケージを提供する
ことを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned circumstances, and in a waveguide connection package for mounting a high-frequency semiconductor element, the isolation characteristics of the semiconductor element are not limited without limiting the dimensions of the cavity. An object of the present invention is to provide a waveguide connection package that can prevent electromagnetic waves leaking from a waveguide into a cavity, which cause deterioration and performance deterioration.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するため
の本発明は、以下の構成を採用した。請求項１に記載の
導波管接続パッケージは、導波管に接続された導波管部
と該導波管部とに連通した略直方体形状のキャビティと
を備えた本体下部と該本体下部に嵌合する上蓋とからな
るパッケージ本体に、前記キャビティに実装された半導
体素子と、該半導体素子に電気的に接続されたマイクロ
ストリップとを有する導波管接続パッケージにおいて、
前記導波管部と前記キャビティとの間にそれらに連通す
る略方形のくびれ部を備え、該くびれ部の前記パッケー
ジ本体の実装面に平行な方向の幅が、前記キャビティの
幅よりも狭いことを特徴とする。To achieve the above object, the present invention employs the following constitution. The waveguide connection package according to claim 1, wherein a lower part of the main body includes a waveguide part connected to the waveguide and a substantially rectangular parallelepiped cavity communicating with the waveguide part, and a lower part of the main body. In a waveguide connection package having a semiconductor element mounted in the cavity and a microstrip electrically connected to the semiconductor element, a package body including an upper lid to be fitted,
A substantially rectangular constricted portion communicating between the waveguide portion and the cavity is provided, and a width of the constricted portion in a direction parallel to a mounting surface of the package body is smaller than a width of the cavity. It is characterized by.
【０００７】請求項２に記載の導波管接続パッケージ
は、請求項１に記載の導波管接続パッケージにおいて、
前記くびれ部の幅ｗ、高さｈ、および長さｌが下記
（７）式から（９）式の関係を満たすことを特徴とす
る。According to a second aspect of the present invention, there is provided the waveguide connecting package according to the first aspect.
The width w, the height h, and the length 1 of the constricted portion satisfy the following equations (7) to (9).
【数７】 (Equation 7)
【数８】 (Equation 8)
【数９】 （ただし、ε、μ、ωは、それぞれ前記導波管中での誘
電率、透磁率、角周波数である。）(Equation 9) (However, ε, μ, and ω are a dielectric constant, a magnetic permeability, and an angular frequency in the waveguide, respectively.)
【０００８】請求項３に記載の導波管接続パッケージ
は、請求項１または請求項２のいずれかに記載の導波管
接続パッケージにおいて、前記くびれ部の対向する側面
部に、該くびれ部に連通し、該くびれ部の長手方向に垂
直に延びた一対の窪み部が形成され、該一対の窪み部の
前記垂直方向の端面間距離が前記導波管の遮断波長の１
／２より大きいことを特徴とする。According to a third aspect of the present invention, there is provided a waveguide connection package according to the first or second aspect, wherein the constricted portion is provided on a side surface facing the constricted portion. A pair of recesses communicating with each other and extending perpendicularly to the longitudinal direction of the constriction are formed, and a distance between the vertical end faces of the pair of recesses is one of a cutoff wavelength of the waveguide.
/ 2.
【０００９】請求項４に記載の導波管接続パッケージ
は、請求項１に記載の導波管接続パッケージにおいて、
前記上蓋に、一対の略直方体形状の凸部が前記上蓋を前
記本体下部に嵌合した際に前記凸部の各々の外側側面が
前記くびれ部の側面部に接するように該くびれ部の長手
方向に平行に並設され、その凸部の高さｈt、長さｌt、
および内側側面間の距離ｗtが下記（１０）式から（１
２）式の関係を満たすことを特徴とする。According to a fourth aspect of the present invention, there is provided the waveguide connecting package according to the first aspect.
The upper lid has a pair of substantially rectangular parallelepiped-shaped projections, and when the upper lid is fitted to the lower part of the main body, a longitudinal direction of the constricted portion such that each outer side surface of the convex portion comes into contact with a side portion of the constricted portion. The height h t , length l t ,
And the distance w t between the inner side surfaces is given by the following equation (10).
It is characterized by satisfying the relationship of the expression 2).
【数１０】 (Equation 10)
【数１１】 [Equation 11]
【数１２】 （ただし、ε、μ、ωは、それぞれ前記導波管中での誘
電率、透磁率、角周波数である。）(Equation 12) (However, ε, μ, and ω are a dielectric constant, a magnetic permeability, and an angular frequency in the waveguide, respectively.)
【００１０】請求項５に記載の導波管接続パッケージ
は、請求項２から請求項４のいずれかに記載の導波管接
続パッケージにおいて、前記キャビティの幅が、前記導
波管の遮断波長の１／２より大きいことを特徴とする。According to a fifth aspect of the present invention, in the waveguide connection package according to any one of the second to fourth aspects, the width of the cavity is equal to a cutoff wavelength of the waveguide. It is characterized by being larger than 1/2.
【００１１】[0011]
【発明の実施の形態】本発明の第一の実施形態を図１を
用いて詳細に説明する。図１（ａ）は信号の伝搬方向と
直交し、且つ、半導体素子の実装面に平行な方向から見
た断面図であり、図１（ｂ）は上蓋をする前のメタルパ
ッケージ本体を上から見た図である。また、図１（ｃ）
は図１（ｂ）中のＡ部の拡大図であり、図１（ｄ）は図
１（ｃ）中のＢ−Ｂ’で見た断面図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described in detail with reference to FIG. FIG. 1A is a cross-sectional view as seen from a direction perpendicular to the signal propagation direction and parallel to the mounting surface of the semiconductor element. FIG. FIG. FIG. 1 (c)
1B is an enlarged view of a portion A in FIG. 1B, and FIG. 1D is a cross-sectional view taken along line BB ′ in FIG. 1C.
【００１２】この導波管接続パッケージ３０は、導波管
３ａ、３ｂに接続された導波管部３ａａ、３ｂｂとその
導波管部３ａａ、３ｂｂとに連通した略直方体形状のキ
ャビティ８とを備えた本体下部１とその本体下部１に嵌
合する上蓋２とからなるパッケージ本体２０に、キャビ
ティ８に実装された半導体素子６と、その半導体素子６
に電気的に接続された導波管−マイクロストリップ変換
（マイクロストリップ）５ａ、５ｂとを有する。導波管
３ａから入力された信号は、導波管部３ａａとアルミナ
基板等の誘電体基板上に形成された導波管−マイクロス
トリップ変換５ａとを介して、ボンディングワイヤ７ａ
を通って半導体素子６へ達する。半導体素子６から出力
された信号は、再び、ボンディングワイヤ７ｂを通り、
導波管−マイクロストリップ変換５ｂと導波管部３ｂｂ
を介して、導波管３ｂへと到達する。The waveguide connection package 30 includes waveguide portions 3aa and 3bb connected to the waveguides 3a and 3b, and a substantially rectangular parallelepiped cavity 8 communicating with the waveguide portions 3aa and 3bb. A semiconductor element 6 mounted in a cavity 8 and a semiconductor element 6 mounted on a package body 20 including a main body lower part 1 and an upper lid 2 fitted to the main body lower part 1 are provided.
And a waveguide-microstrip converter (microstrip) 5a, 5b electrically connected to the A signal input from the waveguide 3a is passed through a waveguide portion 3aa and a waveguide-microstrip converter 5a formed on a dielectric substrate such as an alumina substrate to form a bonding wire 7a.
Through the semiconductor element 6. The signal output from the semiconductor element 6 passes through the bonding wire 7b again,
Waveguide-microstrip converter 5b and waveguide part 3bb
And reaches the waveguide 3b.
【００１３】導波管３ａ、３ｂと半導体素子６を実装す
るキャビティ８との間に、実験式（１３）式、（１４）
式、および（１５）式を満たす間隙ｗ、高さｈ、長さｌ
を持つくびれ部９ａ、９ｂを設ける。The empirical formulas (13) and (14) are provided between the waveguides 3a and 3b and the cavity 8 in which the semiconductor element 6 is mounted.
And the gap w, height h, and length l satisfying the formula (15).
The constricted parts 9a and 9b having are provided.
【数１３】 (Equation 13)
【数１４】 [Equation 14]
【数１５】 高さｈは導波管−マイクロストリップ変換５ａ、５ｂの
誘電体基板厚の３倍程度とることが望ましい。本発明で
は、くびれ部９ａ、９ｂだけで、漏れ電磁波を十分減衰
させることにより、キャビティ８の幅ｗ1を導波管モー
ドをカットオフするサイズよりも大きくすることができ
る。そのため、半導体素子６の実装が容易になり、ま
た、半導体素子６のサイズも制限を受けることはない。
また、くびれ部の形状は、或る長さｌが規定された時、
（１４）式、（１５）式を満たしていれば、ｗ、ｈは一
定でなくてもよい。例えば、周波数76GHzにおいては、
図２に示すような実線の上側の領域にあればよく、間隙
ｗが1mmの場合、長さｌは0.5mm以上あればよい。また、
くびれ部９ａ、９ｂで漏れ電磁波は十分減衰されるた
め、キャビティ８内に電波吸収体を設ける必要もない。
なお、間隙ｗが1.2mm、長さｌが0.8mmのくびれを持ち、
キャビティ８の横幅が従来の2mmよりはるかに大きい4mm
の76GHz帯用メタルパッケージを試作し、3mm角のMMICチ
ップを実装して、良好な特性が得られた。(Equation 15) The height h is preferably about three times the thickness of the dielectric substrate of the waveguide-microstrip converters 5a and 5b. In the present invention, the constricted portion 9a, 9b alone, by sufficiently attenuating the leakage electromagnetic wave, the width w 1 of the cavity 8 can be made larger than the size of the cut-off waveguide mode. Therefore, the mounting of the semiconductor element 6 is facilitated, and the size of the semiconductor element 6 is not limited.
In addition, the shape of the constricted portion, when a certain length l is defined,
If Expressions (14) and (15) are satisfied, w and h may not be constant. For example, at a frequency of 76 GHz,
It suffices if it is in the region above the solid line as shown in FIG. 2, and if the gap w is 1 mm, the length l may be 0.5 mm or more. Also,
Since the leakage electromagnetic waves are sufficiently attenuated by the constrictions 9a and 9b, it is not necessary to provide a radio wave absorber in the cavity 8.
In addition, the gap w has a constriction of 1.2 mm and the length l is 0.8 mm,
4mm width of cavity 8 is much larger than conventional 2mm
Prototype of a 76GHz band metal package was mounted, and a 3mm square MMIC chip was mounted, and good characteristics were obtained.
【００１４】本発明の第二の実施形態を図３を用いて詳
細に説明する。図３（ａ）は蓋をする前のメタルパッケ
ージ本体を上から見た図であり、また、図３（ｂ）は図
３（ａ）中のＣ部の拡大図である。尚、上記第一の実施
形態において既に説明した構成要素には同一の符号を付
してその説明を省略する。A second embodiment of the present invention will be described in detail with reference to FIG. FIG. 3A is a top view of the metal package main body before the cover is placed, and FIG. 3B is an enlarged view of a portion C in FIG. 3A. The components already described in the first embodiment are denoted by the same reference numerals, and description thereof will be omitted.
【００１５】本実施形態では、導波管３ａ、３ｂとキャ
ビティ８との間に、上記（１３）式、（１４）式、およ
び（１５）を満たす間隙ｗ、高さｈ、長さｌを持つくび
れ部９ａ、９ｂを設ける。更に、端面１０ａａａ、１０
ａａａ間の距離ｗ2が導波管モードをカットオフするサ
イズよりも大きな一対の窪み部１０ａ、１０ｂを、信号
の伝搬方向に平行なくびれ部９ａ、９ｂの側面部９ａ
ａ、９ｂｂに少なくとも１つ設ける。この際、窪み部１
０ａ、１０ｂの長さｌ2（窪み部１０ａでは窪み部の伝
搬方向側面１０ａａ、１０ａａ間距離）、複数の場合は
長さの合計が、くびれ部９ａ、９ｂの長さｌの1/2以下
程度にする。また、１つの窪み部の長さｌ2は自由空間
での波長に対して十分小さくする。なお、窪み部１０
ａ、１０ｂの形状は、長さｌが前記の条件を満たしてい
れば、長方形でなくても、例えば、円等、特に規定され
ない。このような窪み部１０を有するくびれ部９ａ、９
ｂにおいても、漏れ電磁波は減衰され、半導体素子６の
性能の劣化を防ぐ。また、窪み部１０は、導波管−マイ
クロストリップ変換５ａ、５ｂを実装する場合におい
て、例えば、ピンセットなど実装工具の取り回しが容易
になる効果をもつ。In the present embodiment, the gap w, height h, and length l satisfying the above equations (13), (14), and (15) are defined between the waveguides 3a, 3b and the cavity 8. Constrictions 9a and 9b are provided. Furthermore, the end faces 10aaa, 10
aaa between the distance w 2 large pair of recessed portions 10a than the size of the cut-off waveguide mode, 10b and signal parallel constriction 9a in the propagation direction of, 9b of the side surface portion 9a
a, 9bb. At this time, the depression 1
0a, 10b of length l 2 (recessed portions 10a in the recessed portion of the propagation direction side lOaa, lOaa distance), the total of the case a plurality of lengths, constriction 9a, 1/2 or less of the length l of 9b About. In addition, the length l 2 of one recess is set to be sufficiently small with respect to the wavelength in free space. The depression 10
As long as the length l satisfies the above-mentioned condition, the shapes of a and 10b are not particularly limited, such as circles, even if they are not rectangular. Constrictions 9a, 9 having such depressions 10
Also in b, the leakage electromagnetic wave is attenuated, and the performance of the semiconductor element 6 is prevented from deteriorating. In addition, the recess 10 has an effect that, when the waveguide-microstrip converters 5a and 5b are mounted, the mounting tool such as tweezers can be easily handled.
【００１６】本発明の第三の実施形態を図４を用いて詳
細に説明する。図４（ａ）は信号の伝搬方向と直交し、
且つ、半導体素子の実装面に平行な方向から見た断面図
である。図４（ｂ）は図４（ａ）中のＤ−Ｄ’で見た断
面図であり、図４（ｃ）は図４（ｂ）中のＥ部の拡大図
である。図４（ｄ）はメタルパッケージの上蓋２を下か
ら見た図である。尚、上記の実施形態において既に説明
した構成要素には同一の符号を付してその説明を省略す
る。A third embodiment of the present invention will be described in detail with reference to FIG. FIG. 4A is orthogonal to the signal propagation direction,
FIG. 3 is a cross-sectional view as seen from a direction parallel to a mounting surface of a semiconductor element. FIG. 4B is a sectional view taken along line DD ′ in FIG. 4A, and FIG. 4C is an enlarged view of a portion E in FIG. 4B. FIG. 4D is a view of the upper lid 2 of the metal package as viewed from below. Note that the same reference numerals are given to the components already described in the above embodiment, and description thereof will be omitted.
【００１７】本実施形態では、上蓋２に、一対の略直方
体形状の凸部１１ａ、１１ａ（あるいは、１１ｂ、１１
ｂ）が上蓋２を本体下部１に接続した際に前記凸部１１
ａ、１１ｂの各々の外側側面１１ａａ、１１ｂｂが前記
くびれ部９ａの側面部９ａａ、９ａａに接するようにく
びれ部９ａの長手方向に平行に並設され、その凸部１１
ａａの高さｈt、長さｌt、および内側側面１１ａａａ、
１１ａａａ間の距離ｗ tが下記（１６）式から（１８）
式の関係を満たす。In the present embodiment, a pair of substantially rectangular
Body-shaped protrusions 11a, 11a (or 11b, 11
b) when the upper lid 2 is connected to the lower part 1 of the main body,
a, 11b each of the outer side surfaces 11aa, 11bb
So as to be in contact with the side surfaces 9aa, 9aa of the constricted portion 9a.
The convex portion 11 is provided in parallel with the longitudinal direction of the narrow portion 9a.
aa height ht, Length lt, And the inner side surface 11aaa,
Distance w between 11aaa tIs obtained from the following equation (16) (18)
Satisfies the relationship of the expression.
【数１６】 (Equation 16)
【数１７】 [Equation 17]
【数１８】 （ただし、ε、μ、ωは、それぞれ前記導波管中での誘
電率、透磁率、角周波数である。） 上蓋２を本体下部１に接続後、その凸部１１はキャビテ
ィの側面に接するように配置されるているが、接続後、
上蓋２と本体下部１とで囲まれた領域によって、漏れ電
磁波を減衰させることが可能となる。(Equation 18) (However, ε, μ, and ω are the permittivity, magnetic permeability, and angular frequency in the waveguide, respectively.) After connecting the upper lid 2 to the lower portion 1 of the main body, the convex portion 11 contacts the side surface of the cavity. But after connection,
The region surrounded by the upper lid 2 and the lower body 1 makes it possible to attenuate leakage electromagnetic waves.
【００１８】ここでは、半導体素子６は本体下部１に実
装しているが、図５に示すように上蓋２に実装してもよ
い。この場合には、半導体素子６にバイアスをかけるこ
とが容易になる、半導体素子６の交換が容易になるとい
った効果がある。また、導波管接続パッケージの材質と
してメタルを用いているが、プラスチックやセラミック
材料等にメッキをしたものでもよい。Here, the semiconductor element 6 is mounted on the lower part 1 of the main body, but may be mounted on the upper lid 2 as shown in FIG. In this case, there is an effect that the bias is easily applied to the semiconductor element 6 and the replacement of the semiconductor element 6 is facilitated. Further, although metal is used as the material of the waveguide connection package, it may be plated with plastic or ceramic material.
【００１９】尚、上記実施形態において、キャビティ８
の幅ｗ1が、導波管３ａ、３ｂの遮断波長の１／２より
大きい方がよい。In the above embodiment, the cavity 8
The width w 1 is, waveguides 3a, better greater than 1/2 of the cutoff wavelength of 3b.
【００２０】[0020]
【発明の効果】以上詳細に説明したように、本発明に係
る高周波半導体素子実装用の導波管接続パッケ−ジにお
いて、導波管部と半導体素子を実装するキャビティとの
間に設けられたくびれ部によって、導波管からの漏れ電
磁波を減衰させることが可能である。そのため、キャビ
ティの幅を大きくすることができ、実装できる半導体素
子のサイズが制限されることがなくなる。また、キャビ
ティの内側に電波吸収体を設ける必要もなくなる。As described above in detail, in the waveguide connection package for mounting a high-frequency semiconductor device according to the present invention, the package is provided between the waveguide portion and the cavity for mounting the semiconductor device. The constriction makes it possible to attenuate leakage electromagnetic waves from the waveguide. Therefore, the width of the cavity can be increased, and the size of the semiconductor element that can be mounted is not limited. Also, there is no need to provide a radio wave absorber inside the cavity.
【図１】 本発明に係る第一の実施形態を示す構造図で
あり、（ａ）は信号の伝搬方向に直交し、且つ、実装面
に平行な方向から見た断面図、（ｂ）は上蓋をつける前
の本体下部を上から見た図、（ｃ）は（ｂ）中のＡ部の
拡大図、（ｄ）は（ｃ）中の一点鎖線Ｂ-Ｂ’の断面図
である。FIGS. 1A and 1B are structural views showing a first embodiment according to the present invention, in which FIG. 1A is a cross-sectional view as seen from a direction perpendicular to a signal propagation direction and parallel to a mounting surface, and FIG. FIG. 7 is a view of the lower part of the main body before the upper lid is attached, (c) is an enlarged view of a portion A in (b), and (d) is a cross-sectional view taken along a dashed line BB ′ in (c).
【図２】 本発明に係る導波管接続パッケージにおける
くびれ部が満たすべき条件の例を示した図である。FIG. 2 is a diagram showing an example of conditions to be satisfied by a constricted portion in a waveguide connection package according to the present invention.
【図３】 本発明に係る第二の実施形態を示す構造図で
あり、（ａ）は上蓋をつける前の本体下部を上から見た
図、（ｂ）は（ａ）中のＣ部の拡大図である。FIGS. 3A and 3B are structural views showing a second embodiment according to the present invention, wherein FIG. 3A is a view of the lower portion of the main body before the upper lid is attached, and FIG. It is an enlarged view.
【図４】 本発明に係る第三の実施形態を示す構造図で
あり、（ａ）は信号の伝搬方向に直交し、且つ、実装面
に平行な方向から見た断面図、（ｂ）は（ａ）中の一点
鎖線Ｄ-Ｄ’で見た断面図、（ｃ）は（ｂ）中のＥの拡
大図、（ｄ）は上蓋を下から見た図である。4A and 4B are structural views showing a third embodiment according to the present invention, wherein FIG. 4A is a cross-sectional view as seen from a direction perpendicular to the signal propagation direction and parallel to the mounting surface, and FIG. (A) is a sectional view taken along the dashed-dotted line DD ′, (c) is an enlarged view of E in (b), and (d) is a view of the upper lid viewed from below.
【図５】 本発明に係る導波管接続パッケージにおい
て、半導体素子を上蓋に実装する方式の構造図であり、
（ａ）は信号の伝搬方向に直交し、且つ、実装面に平行
な方向から見た断面図、（ｂ）は上蓋を下から見た図で
ある。FIG. 5 is a structural diagram of a method of mounting a semiconductor element on an upper lid in a waveguide connection package according to the present invention;
(A) is a cross-sectional view as seen from a direction perpendicular to the signal propagation direction and parallel to the mounting surface, and (b) is a view as seen from below the upper lid.
【図６】 従来例による導波管接続パッケージ構造であ
り、（ａ）は信号の伝搬方向に直交し、且つ、実装面に
平行な方向から見た断面図、（ｂ）は蓋をつける前のパ
ッケージを上から見た図である。6A and 6B show a waveguide connection package structure according to a conventional example, in which FIG. 6A is a cross-sectional view taken in a direction perpendicular to the signal propagation direction and parallel to the mounting surface, and FIG. FIG. 3 is a view of the package of FIG.
１ 本体下部 ２ 上蓋 ３ａ、３ｂ 導波管 ３ａａ、３ｂｂ 導波管部 ４ａ、４ｂ ショート面 ５ａ、５ｂ 導波管ーマイクロストリップ変換（マイク
ロストリップ） ６ 半導体素子 ７ａ、７ｂ ボインディングワイヤ ８ キャビティ ９ａ、９ｂ くびれ部 ９ａａ、９ｂｂ 側面部 １０ａ、１０ｂ 窪み部 １０ａａ 窪み部の伝搬方向側面 １０ａａａ 端面 １１ａ、１１ｂ 凸部 １１ａａ 外側側面 １１ａａａ 内側側面 ２０ パッケージ本体 ３０ 導波管接続パッケージDESCRIPTION OF SYMBOLS 1 Lower part of main body 2 Top lid 3a, 3b Waveguide 3aa, 3bb Waveguide part 4a, 4b Short surface 5a, 5b Waveguide-microstrip conversion (microstrip) 6 Semiconductor element 7a, 7b Binding wire 8 Cavity 9a 9b Constriction 9aa, 9bb Side 10a, 10b Depression 10aa Propagation side 10aa End 11a, 11b Convex 11aa Outer side 11aa Inner side 20 Package body 30 Waveguide connection package
Claims (5)
部とに連通した略直方体形状のキャビティとを備えた本
体下部と該本体下部に嵌合する上蓋とからなるパッケー
ジ本体に、前記キャビティに実装された半導体素子と、
該半導体素子に電気的に接続されたマイクロストリップ
とを有する導波管接続パッケージにおいて、 前記導波管部と前記キャビティとの間にそれらに連通す
る略方形のくびれ部を備え、該くびれ部の前記パッケー
ジ本体の実装面に平行な方向の幅が、前記キャビティの
幅よりも狭いことを特徴とする導波管接続パッケージ。1. A package comprising a lower body having a waveguide portion connected to the waveguide, a substantially rectangular parallelepiped cavity communicating with the waveguide portion, and an upper lid fitted into the lower portion of the body. A main body, a semiconductor element mounted in the cavity,
A waveguide connection package having a microstrip electrically connected to the semiconductor element, comprising: a substantially rectangular constriction communicating between the waveguide and the cavity; A waveguide connecting package, wherein a width in a direction parallel to a mounting surface of the package body is smaller than a width of the cavity.
において、 前記くびれ部の幅ｗ、高さｈ、および長さｌが下記
（１）式から（３）式の関係を満たすことを特徴とする
導波管接続パッケージ。 【数１】 【数２】 【数３】 （ただし、ε、μ、ωは、それぞれ前記導波管中での誘
電率、透磁率、角周波数である。）2. The waveguide connection package according to claim 1, wherein a width w, a height h, and a length l of the constricted portion satisfy the following expressions (1) to (3). Characteristic waveguide connection package. (Equation 1) (Equation 2) (Equation 3) (However, ε, μ, and ω are a dielectric constant, a magnetic permeability, and an angular frequency in the waveguide, respectively.)
接続パッケージにおいて、 前記くびれ部の対向する側面部に、該くびれ部に連通
し、該くびれ部の長手方向に垂直に延びた一対の窪み部
が形成され、該一対の窪み部の前記垂直方向の端面間距
離が前記導波管の遮断波長の１／２より大きいことを特
徴とする導波管接続パッケージ。3. The waveguide connection package according to claim 1, wherein the side face of the constricted portion communicates with the constricted portion and extends perpendicularly to a longitudinal direction of the constricted portion. A waveguide connection package, wherein a pair of depressions are formed, and a distance between the vertical end faces of the pair of depressions is larger than の of a cutoff wavelength of the waveguide.
において、 前記上蓋に、一対の略直方体形状の凸部が前記上蓋を前
記本体下部に嵌合した際に前記凸部の各々の外側側面が
前記くびれ部の側面部に接するように該くびれ部の長手
方向に平行に並設され、その凸部の高さｈt、長さｌt、
および内側側面間の距離ｗtが下記（４）式から（６）
式の関係を満たすことを特徴とする導波管接続パッケー
ジ。 【数４】 【数５】 【数６】 （ただし、ε、μ、ωは、それぞれ前記導波管中での誘
電率、透磁率、角周波数である。）4. The waveguide connection package according to claim 1, wherein a pair of substantially rectangular parallelepiped convex portions are fitted to the upper lid, and each of the convex portions is outside when the upper lid is fitted to the lower portion of the main body. The side surface is in parallel with the longitudinal direction of the constricted portion so as to be in contact with the side surface portion of the constricted portion, and the height h t , length l t ,
And the distance w t between the inner side surfaces is given by the following equation (4),
A waveguide connection package that satisfies the relationship of the expression. (Equation 4) (Equation 5) (Equation 6) (However, ε, μ, and ω are a dielectric constant, a magnetic permeability, and an angular frequency in the waveguide, respectively.)
の導波管接続パッケージにおいて、 前記キャビティの幅が、前記導波管の遮断波長の１／２
より大きいことを特徴とする導波管接続パッケージ。5. The waveguide connection package according to claim 2, wherein a width of the cavity is a half of a cutoff wavelength of the waveguide.
A waveguide connection package characterized by being larger.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04233499A JP3204241B2 (en) | 1999-02-19 | 1999-02-19 | Waveguide connection package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04233499A JP3204241B2 (en) | 1999-02-19 | 1999-02-19 | Waveguide connection package |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000244211A true JP2000244211A (en) | 2000-09-08 |
| JP3204241B2 JP3204241B2 (en) | 2001-09-04 |
Family
ID=12633123
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04233499A Expired - Fee Related JP3204241B2 (en) | 1999-02-19 | 1999-02-19 | Waveguide connection package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3204241B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1443589A1 (en) * | 2003-01-31 | 2004-08-04 | Thomson Licensing S.A. | Transition between a microstrip circuit and a waveguide and outside transmission reception unit incorporating the transition |
| KR100472681B1 (en) * | 2002-10-21 | 2005-03-10 | 한국전자통신연구원 | Waveguide-structured package and method for fabricating the same |
| JP2011120155A (en) * | 2009-12-07 | 2011-06-16 | Japan Radio Co Ltd | Microstrip line-wave guide converter |
| CN104752412A (en) * | 2013-12-25 | 2015-07-01 | 株式会社东芝 | Semiconductor package, semiconductor module, semiconductor device |
| JP2015126289A (en) * | 2013-12-25 | 2015-07-06 | 株式会社東芝 | Semiconductor package |
| JP2015126025A (en) * | 2013-12-25 | 2015-07-06 | 株式会社東芝 | Semiconductor package |
| JP2015149420A (en) * | 2014-02-07 | 2015-08-20 | 株式会社東芝 | Millimeter waveband semiconductor package and millimeter waveband semiconductor device |
| JP2015149649A (en) * | 2014-02-07 | 2015-08-20 | 株式会社東芝 | Millimeter waveband semiconductor package and millimeter waveband semiconductor device |
| US9343793B2 (en) | 2014-02-07 | 2016-05-17 | Kabushiki Kaisha Toshiba | Millimeter wave bands semiconductor package |
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1999
- 1999-02-19 JP JP04233499A patent/JP3204241B2/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100472681B1 (en) * | 2002-10-21 | 2005-03-10 | 한국전자통신연구원 | Waveguide-structured package and method for fabricating the same |
| EP1443589A1 (en) * | 2003-01-31 | 2004-08-04 | Thomson Licensing S.A. | Transition between a microstrip circuit and a waveguide and outside transmission reception unit incorporating the transition |
| FR2850793A1 (en) * | 2003-01-31 | 2004-08-06 | Thomson Licensing Sa | TRANSITION BETWEEN A MICRO-TAPE CIRCUIT AND A WAVEGUIDE AND OUTDOOR TRANSCEIVING UNIT INCORPORATING THE TRANSITION |
| CN100411243C (en) * | 2003-01-31 | 2008-08-13 | 汤姆森许可贸易公司 | Microstrip circuit and transition device between waveguide and external transceiver unit contg. such transition device |
| JP2011120155A (en) * | 2009-12-07 | 2011-06-16 | Japan Radio Co Ltd | Microstrip line-wave guide converter |
| JP2015126289A (en) * | 2013-12-25 | 2015-07-06 | 株式会社東芝 | Semiconductor package |
| CN104752412A (en) * | 2013-12-25 | 2015-07-01 | 株式会社东芝 | Semiconductor package, semiconductor module, semiconductor device |
| JP2015126025A (en) * | 2013-12-25 | 2015-07-06 | 株式会社東芝 | Semiconductor package |
| US9536843B2 (en) | 2013-12-25 | 2017-01-03 | Kabushiki Kaisha Toshiba | Semiconductor package and semiconductor module |
| JP2015149420A (en) * | 2014-02-07 | 2015-08-20 | 株式会社東芝 | Millimeter waveband semiconductor package and millimeter waveband semiconductor device |
| JP2015149649A (en) * | 2014-02-07 | 2015-08-20 | 株式会社東芝 | Millimeter waveband semiconductor package and millimeter waveband semiconductor device |
| US9343793B2 (en) | 2014-02-07 | 2016-05-17 | Kabushiki Kaisha Toshiba | Millimeter wave bands semiconductor package |
| US9343794B2 (en) | 2014-02-07 | 2016-05-17 | Kabushiki Kaisha Toshiba | Millimeter wave bands semiconductor package |
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