JP2000236080A - Photoelectric converting device, solid-state image pickup device, and manufacture thereof - Google Patents

Photoelectric converting device, solid-state image pickup device, and manufacture thereof

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Publication number
JP2000236080A
JP2000236080A JP11355692A JP35569299A JP2000236080A JP 2000236080 A JP2000236080 A JP 2000236080A JP 11355692 A JP11355692 A JP 11355692A JP 35569299 A JP35569299 A JP 35569299A JP 2000236080 A JP2000236080 A JP 2000236080A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
film
transparent electrode
region
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11355692A
Other languages
Japanese (ja)
Other versions
JP3296352B2 (en
Inventor
Ichiro Murakami
一朗 村上
Yasutaka Nakashiba
康隆 中柴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
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Filing date
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Priority to JP35569299A priority Critical patent/JP3296352B2/en
Publication of JP2000236080A publication Critical patent/JP2000236080A/en
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Publication of JP3296352B2 publication Critical patent/JP3296352B2/en
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Abstract

PROBLEM TO BE SOLVED: To provide a photoelectric converting device having superior sensitivity and resolution without gradation in transfer efficiency and transferred quantity of charge. SOLUTION: An N-type region 5 which forms a photoelectric converting region 2, and a P-type region 6 which forms a channel stopping region 3 are arranged on the surface of a P-type silicon substrate 4, and a transparent electrode 1, consisting of polycrystalline silicon, is provided on the substrate 4 via an insulating film 7. The film thickness of the photoelectric converting region 2 on the transparent electrode 1 is formed smaller than the film thickness in parts other than the photoelectric converting region 2, and an antireflection film 8 consisting of a silicon nitride film, etc., is formed above the photoelectric converging region 2.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、光電変換装置、お
よびそれを用いた固体撮像装置とその製造方法に関す
る。The present invention relates to a photoelectric conversion device, a solid-state imaging device using the same, and a method of manufacturing the same.

【０００２】[0002]

【従来の技術】ＣＣＤ型固体撮像装置には、その動作モ
ードで分類すると、インターライン転送方式とフレーム
転送方式（またはフルフレーム型転送方式）とがある。
インターライン転送型の固体撮像装置では、各画素部が
ＰＮ接合からなり、Ｎ型領域の上方に形成された絶縁膜
を通して光が入射する。また、各画素列に隣接して垂直
電荷転送部が形成され、光電変換部に蓄積された信号電
荷が垂直電荷転送部に転送される。そして、垂直電荷転
送部の内容が順次水平電荷転送部に転送、出力される。2. Description of the Related Art CCD solid-state imaging devices are classified into an interline transfer system and a frame transfer system (or a full frame transfer system) when classified according to their operation modes.
In the interline transfer type solid-state imaging device, each pixel portion is formed of a PN junction, and light enters through an insulating film formed above the N-type region. Further, a vertical charge transfer section is formed adjacent to each pixel column, and the signal charges accumulated in the photoelectric conversion section are transferred to the vertical charge transfer section. Then, the contents of the vertical charge transfer unit are sequentially transferred and output to the horizontal charge transfer unit.

【０００３】一方、フレーム転送型の固体撮像装置で
は、電荷転送部を兼ねる光電変換部と蓄積部と水平電荷
転送部に分かれており、光電変換部に蓄積された信号電
荷は垂直ブランキング期間内に蓄積部に転送され、その
後、蓄積部の信号が水平電荷転送部に順次読み出され
る。蓄積部からの読み出し期間中、光電変換部は次の信
号電荷を蓄積している。したがって、フレーム転送型固
体撮像装置の光電変換部に用いるＣＣＤには、転送ゲー
トをなす透明電極を通して光が入射され、光電変換が行
われる。なお、フルフレーム転送方式の固体撮像装置
は、光電変換部と水平転送部とを備えており、水平転送
部へ蓄積電荷を転送する際には機械的シャッター等を用
いて入射光を遮断する必要がある。一方、フレーム転送
方式の固体撮像装置は、光電変換部と蓄積部と水平転送
部とを備えており、光電変換部に蓄積された電荷は一括
して高速で蓄積部に転送される。蓄積部は遮光されてい
るので、蓄積部に蓄積された画像情報は次の画像情報を
光電変換部に蓄積するまでの間に転送を完了すればよい
ため、機械式シャッター等により光を遮断する必要はな
い。On the other hand, in a frame transfer type solid-state imaging device, a photoelectric conversion unit also serving as a charge transfer unit, a storage unit, and a horizontal charge transfer unit are divided, and signal charges stored in the photoelectric conversion unit are stored in a vertical blanking period. Then, the signals in the storage section are sequentially read out to the horizontal charge transfer section. During the reading period from the storage unit, the photoelectric conversion unit stores the next signal charge. Therefore, light is incident on the CCD used for the photoelectric conversion unit of the frame transfer type solid-state imaging device through the transparent electrode forming the transfer gate, and photoelectric conversion is performed. The full-frame transfer type solid-state imaging device includes a photoelectric conversion unit and a horizontal transfer unit. When transferring accumulated charges to the horizontal transfer unit, it is necessary to block incident light using a mechanical shutter or the like. There is. On the other hand, the solid-state imaging device of the frame transfer system includes a photoelectric conversion unit, a storage unit, and a horizontal transfer unit, and charges accumulated in the photoelectric conversion unit are collectively transferred to the storage unit at high speed. Since the storage unit is shielded from light, the transfer of the image information stored in the storage unit may be completed before the next image information is stored in the photoelectric conversion unit. Therefore, light is blocked by a mechanical shutter or the like. No need.

【０００４】図１１は従来のフレーム転送型固体撮像装
置の光電変換部の転送方向に対して垂直な箇所の断面構
造の一例を示す図である。この固体撮像装置の場合、Ｐ
型シリコン基板５０上に、光電変換領域５１をなすＮ型
領域５２が形成されるとともに、隣接する光電変換領域
５１同士を分離するチャネルストップ領域５３をなすＰ
+型領域５４が形成されている。また、基板５０上に絶
縁層５５を介して透明電極５６が形成され、透明電極５
６上には平坦化層５７が形成されている。FIG. 11 is a diagram showing an example of a cross-sectional structure of a portion perpendicular to the transfer direction of a photoelectric conversion section of a conventional frame transfer type solid-state imaging device. In the case of this solid-state imaging device, P
An N-type region 52 forming a photoelectric conversion region 51 is formed on a silicon substrate 50, and a P-type channel forming a channel stop region 53 separating adjacent photoelectric conversion regions 51 from each other.
A + type region 54 is formed. Further, a transparent electrode 56 is formed on the substrate 50 via an insulating layer 55, and the transparent electrode 5
A flattening layer 57 is formed on 6.

【０００５】上記構造の固体撮像装置を製造する際に
は、まず、図１２（ａ）に示すように、Ｐ型シリコン基
板５０上にＮ型領域５２、Ｐ+型領域５４をそれぞれ形
成し、絶縁層５５を形成した後、例えば多結晶シリコン
膜を全面に形成した後、多結晶シリコン膜を線状にパタ
ーニングして長く延びる透明電極５６を形成する。その
後、図１２（ｂ）に示すように、透明電極５６を覆うよ
うにシリコン酸化膜等からなる平坦化層５７を形成す
る。When manufacturing a solid-state imaging device having the above structure, first, as shown in FIG. 12A, an N-type region 52 and a P + type region 54 are formed on a P-type silicon substrate 50, respectively. After the insulating layer 55 is formed, for example, a polycrystalline silicon film is formed on the entire surface, and then the polycrystalline silicon film is linearly patterned to form a long-extending transparent electrode 56. Thereafter, as shown in FIG. 12B, a flattening layer 57 made of a silicon oxide film or the like is formed so as to cover the transparent electrode 56.

【０００６】この固体撮像装置においては、光が平坦化
層５７、透明電極５６、絶縁層５５を通してＰ型シリコ
ン基板５０内に入射され、光電変換領域５１のＮ型領域
５２内で光電変換が行われ、信号電荷が蓄積される。そ
して、複数の透明電極５６にパルスが与えられることに
より蓄積された信号電荷が紙面の垂直方向に順次転送さ
れていく。In this solid-state imaging device, light is incident on the P-type silicon substrate 50 through the flattening layer 57, the transparent electrode 56, and the insulating layer 55, and photoelectric conversion is performed in the N-type region 52 of the photoelectric conversion region 51. As a result, signal charges are accumulated. Then, the signal charges accumulated by applying the pulse to the plurality of transparent electrodes 56 are sequentially transferred in the vertical direction of the drawing.

【０００７】[0007]

【発明が解決しようとする課題】しかしながら、上記従
来の固体撮像装置には次のような問題点があった。それ
は、透明電極を厚く形成した場合においては感度が低下
し、薄く形成した場合には転送効率や転送電荷量の低下
を招くという問題点である。さらに、解像度の点でも不
満足であった。However, the above-mentioned conventional solid-state imaging device has the following problems. That is, when the transparent electrode is formed to be thick, the sensitivity is reduced, and when the transparent electrode is formed to be thin, the transfer efficiency and the transfer charge amount are reduced. In addition, the resolution was unsatisfactory.

【０００８】なぜならば、上記従来の固体撮像装置では
多結晶シリコン等からなる透明電極がどの部分も等しい
膜厚に形成されているが、透明電極部分の配線抵抗を下
げようとすると透明電極の膜厚を厚くすることが考えら
れる。ところが、透明電極の膜厚を厚くした場合、透明
電極に入射された光が内部で乱反射する分が多くなり、
光の透過率が低下するために感度が低下する。そこで、
感度の向上を重視して透明電極を薄くすると、今度は配
線抵抗が増大してパルスなまり等の問題が生じ、転送効
率や転送電荷量が低下する。また、図１１に示した構造
からすると、チャネルストップ領域にも透明電極を介し
て光が入射されるが、光の周縁部はチャネルストップ領
域の両側方の光電変換領域に振り分けられて光電変換が
行われるため、解像度が低下するのである。This is because, in the above-described conventional solid-state imaging device, the transparent electrodes made of polycrystalline silicon or the like are formed to have the same film thickness in all portions. It is conceivable to increase the thickness. However, when the thickness of the transparent electrode is increased, the amount of light incident on the transparent electrode that is irregularly reflected inside increases,
The sensitivity decreases because the light transmittance decreases. Therefore,
If the thickness of the transparent electrode is reduced with an emphasis on the improvement of sensitivity, the wiring resistance will increase, causing problems such as pulse rounding, and the transfer efficiency and transfer charge amount will decrease. According to the structure shown in FIG. 11, light is also incident on the channel stop region via the transparent electrode. However, the periphery of the light is distributed to the photoelectric conversion regions on both sides of the channel stop region, and photoelectric conversion is performed. As a result, the resolution is reduced.

【０００９】本発明は、上記の課題を解決するためにな
されたものであって、転送効率や転送電荷量の低下が生
じることなく、感度や解像度に優れた光電変換装置、固
体撮像装置とその製造方法を提供することを目的とす
る。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and a photoelectric conversion device, a solid-state imaging device, and a photoelectric conversion device having excellent sensitivity and resolution without causing a decrease in transfer efficiency and transfer charge amount. It is intended to provide a manufacturing method.

【００１０】[0010]

【課題を解決するための手段】上記の目的を達成するた
めに、本発明の光電変換装置は、第１導電型の半導体基
板と、第１導電型の半導体基板上に形成された第１の絶
縁膜と、第１の絶縁膜上に形成された透明電極と、透明
電極上に形成された第１の反射防止膜を有する。第１導
電型半導体基板内には、第２導電型領域を有する。ま
た、透明電極には、所望の電圧を印加する。第１の反射
防止膜上には、第２の絶縁膜を有するのが好ましく、透
明電極と第１の反射防止膜の間に、第３の絶縁膜を有す
ることが好ましい。第３の絶縁膜の膜厚は、第２の絶縁
膜の膜厚より、薄いことが好ましく、第１の反射防止膜
の屈折率は、透明電極の屈折率と、第２の絶縁膜の屈折
率の間の屈折率であることが好ましい。第１導電型半導
体基板と第１の絶縁膜の間に、第２の反射防止膜を有し
ても良く、第１導電型半導体基板と第２の反射防止膜の
間に、第４の絶縁膜を有するのも好ましい。このとき、
第４の絶縁膜の膜厚が、第１の絶縁膜の膜厚より、薄い
方が良い。また、第２の反射防止膜の屈折率は、第１導
電型半導体基板の屈折率と、第１の絶縁膜の屈折率の間
の屈折率になるように設定すると良い。前述の絶縁膜
は、いずれかがシリコン酸化膜であることが望ましく、
第３、第４の絶縁膜の膜厚は、５０ｎｍ以下であること
が望ましい。第１、第２の反射防止膜はシリコン窒化
膜、タンタルオキサイド、またはＢＳＴで、透明電極
は、多結晶シリコンで形成すると良い。In order to achieve the above object, a photoelectric conversion device according to the present invention comprises a first conductive type semiconductor substrate and a first conductive type semiconductor substrate formed on the first conductive type semiconductor substrate. An insulating film; a transparent electrode formed on the first insulating film; and a first antireflection film formed on the transparent electrode. The first conductivity type semiconductor substrate has a second conductivity type region. A desired voltage is applied to the transparent electrode. It is preferable that a second insulating film be provided over the first anti-reflection film, and a third insulating film be provided between the transparent electrode and the first anti-reflection film. The thickness of the third insulating film is preferably smaller than the thickness of the second insulating film, and the refractive index of the first antireflection film is determined by the refractive index of the transparent electrode and the refractive index of the second insulating film. Preferably, the refractive index is between the indices. A second antireflection film may be provided between the first conductivity type semiconductor substrate and the first insulating film, and a fourth insulating film is provided between the first conductivity type semiconductor substrate and the second antireflection film. It is also preferred to have a membrane. At this time,
The thickness of the fourth insulating film is preferably smaller than the thickness of the first insulating film. Further, the refractive index of the second antireflection film is preferably set to be a refractive index between the refractive index of the first conductivity type semiconductor substrate and the refractive index of the first insulating film. It is preferable that any one of the above-mentioned insulating films is a silicon oxide film,
It is desirable that the thicknesses of the third and fourth insulating films be 50 nm or less. The first and second antireflection films are preferably formed of a silicon nitride film, tantalum oxide or BST, and the transparent electrode is preferably formed of polycrystalline silicon.

【００１１】本発明の固体撮像装置は、半導体基板上に
多数の光電変換領域と各光電変換領域間と各光電変換領
域間を分離する多数のチャネルストップ領域とが配列さ
れ、前記光電変換領域および前記チャネルストップ領域
の上方にわたって絶縁膜を介して透明電極が設けられた
フレーム転送型またはフルフレーム転送型の固体撮像装
置において、前記透明電極表面の少なくとも前記光電変
換領域の上方に位置する箇所に第１の反射防止膜が設け
られたことを特徴とするものである。In the solid-state imaging device according to the present invention, a large number of photoelectric conversion regions and a large number of channel stop regions for separating between the photoelectric conversion regions and between the photoelectric conversion regions are arranged on a semiconductor substrate. In a frame transfer type or full frame transfer type solid-state imaging device in which a transparent electrode is provided via an insulating film over the channel stop region, at least a portion of the transparent electrode surface located above the photoelectric conversion region. In this case, one antireflection film is provided.

【００１２】本発明の他の固体撮像装置は、半導体基板
上に多数の光電変換領域と各光電変換領域間を分離する
多数のチャネルストップ領域とが配列され、前記光電変
換領域および前記チャネルストップ領域の上方にわたっ
て第１の絶縁膜を介して透明電極が設けられたフレーム
転送型またはフルフレーム転送型の固体撮像装置におい
て、前記透明電極の少なくとも前記光電変換領域の上方
に位置する部分と該透明電極を覆う第２の絶縁膜との間
に、前記透明電極の屈折率と前記第２の絶縁膜の屈折率
との間の屈折率を有する第１の反射防止膜が設けられた
ことを特徴とするものである。In another solid-state imaging device according to the present invention, a large number of photoelectric conversion regions and a large number of channel stop regions for separating between the photoelectric conversion regions are arranged on a semiconductor substrate, and the photoelectric conversion region and the channel stop region are arranged. Transfer type or full frame transfer type solid-state imaging device in which a transparent electrode is provided over a first insulating film via a first insulating film, a portion of the transparent electrode located at least above the photoelectric conversion region, and the transparent electrode A first anti-reflection film having a refractive index between the refractive index of the transparent electrode and the refractive index of the second insulating film is provided between the second anti-reflection film and the second insulating film covering the first insulating film. Is what you do.

【００１３】前記透明電極のうち、前記光電変換領域の
上方に位置する部分の膜厚をそれ以外の部分の膜厚より
も薄くすることが好ましい。さらに、前記透明電極表面
の前記光電変換領域以外の部の上方に位置する箇所に遮
光膜を設けることが好ましい。It is preferable that the thickness of a portion of the transparent electrode located above the photoelectric conversion region is smaller than the thickness of other portions. Furthermore, it is preferable to provide a light-shielding film at a location on the surface of the transparent electrode above a portion other than the photoelectric conversion region.

【００１４】本発明の他の固体撮像装置は、半導体基板
上に多数の光電変換領域と各光電変換領域間を分離する
多数のチャネルストップ領域とが配列され、前記光電変
換領域および前記チャネルストップ領域の上方にわたっ
て絶縁膜を介して透明電極が設けられたフレーム転送型
またはフルフレーム転送型の固体撮像装置において、前
記光電変換領域以外の領域の上方に位置する前記透明電
極の表面に遮光膜が設けられたことを特徴とするもので
ある。In another solid-state imaging device according to the present invention, a large number of photoelectric conversion regions and a large number of channel stop regions for separating between the photoelectric conversion regions are arranged on a semiconductor substrate, and the photoelectric conversion region and the channel stop region are arranged. In a frame transfer type or full frame transfer type solid-state imaging device in which a transparent electrode is provided over an insulating film via an insulating film, a light-shielding film is provided on a surface of the transparent electrode located above a region other than the photoelectric conversion region. It is characterized by having been done.

【００１５】本発明のさらに他の固体撮像装置は、半導
体基板上に多数の光電変換領域と各光電変換領域間を分
離する多数のチャネルストップ領域とが配列され、前記
光電変換Ｒおよび前記チャネルストップ部の上方にわた
って絶縁膜を介して透明電極が設けられたフレーム転送
型またはフルフレーム転送型の固体撮像装置において、
前記透明電極のうち、前記光電変換領域の上方に位置す
る部分の膜厚がそれ以外の部分の膜厚よりも薄いことを
特徴とするものである。In still another solid-state imaging device according to the present invention, a large number of photoelectric conversion regions and a large number of channel stop regions for separating between the photoelectric conversion regions are arranged on a semiconductor substrate. In a frame transfer type or full frame transfer type solid-state imaging device in which a transparent electrode is provided via an insulating film over the portion,
The thickness of a portion of the transparent electrode located above the photoelectric conversion region is smaller than the thickness of other portions.

【００１６】上記本発明の光電変換装置によれば、透明
電極表面の光電変換領域の上方に位置する箇所に第１の
反射防止膜が設けられているため、第１の反射防止膜を
持たない従来のものと比較して透明電極、絶縁膜を経て
半導体基板表面の光電変換領域に到達する光の量、すな
わち光の透過率が向上する。その結果、感度を向上させ
ることができる。また、第１の反射防止膜として、透明
電極の屈折率と透明電極上の第２の絶縁膜の屈折率との
間の屈折率を有するものを用いると、光の全反射を防止
することができる。According to the photoelectric conversion device of the present invention, since the first antireflection film is provided at a position above the photoelectric conversion region on the surface of the transparent electrode, the first antireflection film is not provided. The amount of light reaching the photoelectric conversion region on the surface of the semiconductor substrate via the transparent electrode and the insulating film, that is, the light transmittance is improved as compared with the conventional one. As a result, the sensitivity can be improved. When the first antireflection film has a refractive index between the refractive index of the transparent electrode and the refractive index of the second insulating film on the transparent electrode, total reflection of light can be prevented. it can.

【００１７】固体撮像装置においては、上記第１の反射
防止膜を付加したことに加えて、透明電極のうちの光電
変換領域にあたる部分の膜厚をそれ以外の部分の膜厚よ
りも薄くした場合、透明電極における光の透過率がより
向上し、感度をより向上させることができる。逆に言え
ば、光電変換領域以外にあたる部分の透明電極の膜厚は
厚く形成されるため、従来のように透明電極の膜厚をど
の箇所も同じにし、しかも透過率向上の観点から膜厚を
一様に薄くした場合に比べて、配線抵抗を低減すること
ができる。その結果、配線に供給する読み出しパルスの
なまり等が生じることがなく、ひいては転送効率や転送
電荷量の低下を防止することができる。この場合、光電
変換領域にあたる部分の膜厚は、約３００ｎｍ以下であ
る必要があり、好ましくは１５０〜２５０ｎｍ程度が適
切である。膜厚が厚くなると、透過率が下がるために感
度が劣化する。このため、膜厚と受光セルの面積はある
比例関係にあり、セルの面積を変えなければ、膜厚を薄
くすることで感度が上がり、感度を一定にすればセルの
面積を小さくすることができる。In the solid-state imaging device, in addition to the addition of the first anti-reflection film, the thickness of a portion of the transparent electrode corresponding to the photoelectric conversion region is made smaller than that of the other portions. In addition, the light transmittance of the transparent electrode can be further improved, and the sensitivity can be further improved. Conversely, since the thickness of the transparent electrode in a portion other than the photoelectric conversion region is formed to be thick, the thickness of the transparent electrode is set to be the same at all portions as in the related art, and the thickness is increased from the viewpoint of improving transmittance. Wiring resistance can be reduced as compared with the case where the thickness is reduced uniformly. As a result, the read pulse supplied to the wiring is not rounded and the transfer efficiency and the transfer charge amount can be prevented from lowering. In this case, the thickness of the portion corresponding to the photoelectric conversion region needs to be about 300 nm or less, and preferably about 150 to 250 nm. When the film thickness is large, the transmittance is lowered, so that the sensitivity is deteriorated. For this reason, the film thickness and the area of the light receiving cell are in a certain proportional relationship. If the cell area is not changed, the sensitivity can be increased by decreasing the film thickness, and if the sensitivity is kept constant, the cell area can be reduced. it can.

【００１８】さらに、光電変換領域以外の領域、例えば
チャネルストップ領域にあたる透明電極上に遮光膜を設
けた場合、チャネルストップ領域上に入射する光が遮光
膜により遮光され、任意の光電変換領域に入射される光
が隣接する光電変換領域にも入射されるのを防止するた
め、解像度を向上させることができる。Further, when a light-shielding film is provided on a region other than the photoelectric conversion region, for example, on a transparent electrode corresponding to a channel stop region, light incident on the channel stop region is shielded by the light-shielding film and incident on an arbitrary photoelectric conversion region. In order to prevent the light to be incident on the adjacent photoelectric conversion region, the resolution can be improved.

【００１９】なお、具体的な構成材料としては、半導体
基板にはシリコン基板、（第１の）絶縁膜にはシリコン
酸化膜、シリコン窒化膜、シリコン酸化窒化膜、透明電
極には多結晶シリコン、第１の反射防止膜にはシリコン
窒化膜、シリコン酸化窒化膜、（第２の）絶縁膜にはシ
リコン酸化膜、遮光膜にはチタンシリサイド、タングス
テンシリサイド等の高融点金属のシリサイド膜もしくは
金属膜、等を用いることが可能である。例えば透明電極
に多結晶シリコン、第１の反射防止膜にシリコン窒化膜
やシリコン酸化窒化膜、第２の絶縁膜にシリコン酸化膜
を用いた場合、屈折率が下から順に約５，約２，約１．
４５となり、上記の全反射を防止するための条件を満足
する。As specific constituent materials, a silicon substrate is used for a semiconductor substrate, a silicon oxide film, a silicon nitride film, a silicon oxynitride film is used for a (first) insulating film, and polycrystalline silicon is used for a transparent electrode. A silicon nitride film, a silicon oxynitride film for the first antireflection film, a silicon oxide film for the (second) insulating film, and a silicide film or a metal film of a refractory metal such as titanium silicide or tungsten silicide for the light shielding film. , Etc. can be used. For example, when polycrystalline silicon is used for a transparent electrode, a silicon nitride film or a silicon oxynitride film is used for a first antireflection film, and a silicon oxide film is used for a second insulating film, the refractive index is about 5, about 2, About 1.
45, which satisfies the condition for preventing the above total reflection.

【００２０】本発明の固体撮像装置の製造方法は、第１
導電型の半導体基板の表面にイオン注入により前記第１
導電型と逆の導電型である第２導電型の光電変換領域を
形成する工程と、前記第２導電型の各光電変換領域間を
分離する第１導電型のチャネルストップ領域を形成する
工程と、前記半導体基板上に絶縁膜を形成する工程と、
該絶縁膜上に透明電極を形成する工程と、該透明電極上
の一部または全面に前記透明電極の屈折率よりも小さい
屈折率の第１の反射防止膜を形成する工程とを有するこ
とを特徴とするものである。前記第１の反射防止膜を透
明電極上の一部に形成する場合には、光電変換領域の上
方に位置する箇所に形成することが好ましい。The method for manufacturing a solid-state imaging device according to the present invention comprises the following steps.
The first substrate is ion-implanted into the surface of a conductive semiconductor substrate.
Forming a second conductivity type photoelectric conversion region having a conductivity type opposite to the conductivity type; and forming a first conductivity type channel stop region separating the photoelectric conversion regions of the second conductivity type. Forming an insulating film on the semiconductor substrate;
Forming a transparent electrode on the insulating film; and forming a first anti-reflection film having a refractive index smaller than that of the transparent electrode on a part or the entire surface of the transparent electrode. It is a feature. When the first antireflection film is formed on a part of the transparent electrode, it is preferable to form the first antireflection film at a position located above the photoelectric conversion region.

【００２１】本発明の他の固体撮像装置の製造方法は、
第１導電型の半導体基板の表面にイオン注入により前記
第１導電型と逆の導電型である第２導電型の光電変換領
域を形成する工程と、前記第２導電型の各光電変換部間
を分離する第１導電型のチャネルストップ領域を形成す
る工程と、前記半導体基板上に絶縁膜を形成する工程
と、該絶縁膜上に透明電極を形成する工程と、前記透明
電極のうち前記光電変換領域の上方に位置する部分の一
部または全部をそれ以外の部分より膜厚が薄くなるよう
に除去する工程とを有することを特徴とするものであ
る。さらに、透明電極のうち光電変換領域の上方に位置
する部分の一部または全部をそれ以外の部分より膜厚が
薄くなるように除去する工程の後に、透明電極上の一部
または全面に透明電極の屈折率よりも小さい屈折率の第
１の反射防止膜を形成する工程を設けるとよい。Another method of manufacturing a solid-state imaging device according to the present invention is as follows.
Forming a second conductivity type photoelectric conversion region having a conductivity type opposite to the first conductivity type by ion implantation on a surface of the first conductivity type semiconductor substrate; Forming a first conductivity type channel stop region for isolating a semiconductor substrate, forming an insulating film on the semiconductor substrate, forming a transparent electrode on the insulating film, Removing part or all of the portion located above the conversion region so that the film thickness is smaller than that of the other portion. Furthermore, after the step of removing part or all of the portion of the transparent electrode located above the photoelectric conversion region so that the film thickness is smaller than the other portions, the transparent electrode is partially or entirely formed on the transparent electrode. It is preferable to provide a step of forming a first antireflection film having a refractive index smaller than that of the first antireflection film.

【００２２】本発明の他の固体撮像装置の製造方法は、
第１導電型の半導体基板の表面にイオン注入により前記
第１導電型と逆の導電型である第２導電型の光電変換領
域を形成する工程と、前記第２導電型の各光電変換部間
を分離する第１導電型のチャネルストップ領域を形成す
る工程と、前記半導体基板上に絶縁膜を形成する工程
と、該絶縁膜上に多結晶シリコンからなる透明電極を形
成する工程と、該透明電極の表面に高融点金属膜を被着
させる工程と、熱処理により前記透明電極の前記高融点
金属膜と接した部分をシリサイド化する工程と、その後
でシリサイド化していない前記高融点金属膜を除去する
工程とを有することを特徴とするものである。Another method of manufacturing a solid-state imaging device according to the present invention is as follows.
Forming a second conductivity type photoelectric conversion region having a conductivity type opposite to the first conductivity type by ion implantation on a surface of the first conductivity type semiconductor substrate; Forming a first conductivity type channel stop region that separates the semiconductor substrate, forming an insulating film on the semiconductor substrate, forming a transparent electrode made of polycrystalline silicon on the insulating film, A step of depositing a high melting point metal film on the surface of the electrode, a step of silicidizing a portion of the transparent electrode in contact with the high melting point metal film by heat treatment, and then removing the high melting point metal film which has not been silicided. And a step of performing

【００２３】本発明の他の固体撮像装置の製造方法は、
第１導電型の半導体基板の表面にイオン注入により前記
第１導電型と逆の導電型である第２導電型の光電変換領
域を形成する工程と、前記第２導電型の各光電変換領域
間を分離する第１導電型のチャネルストップ領域を形成
する工程と、前記半導体基板上に絶縁膜を形成する工程
と、該絶縁膜上に多結晶シリコンからなる透明電極を形
成する工程と、該透明電極の表面に高融点金属膜を被着
させる工程と、熱処理により前記透明電極の前記高融点
金属膜と接した部分をシリサイド化する工程と、前記光
電変換部の上方に位置する前記高融点金属膜またはシリ
サイド膜を除去する工程とを有することを特徴とするも
のである。Another method for manufacturing a solid-state imaging device according to the present invention is as follows.
Forming a second conductivity type photoelectric conversion region having a conductivity type opposite to the first conductivity type by ion implantation on a surface of the first conductivity type semiconductor substrate; Forming a first conductivity type channel stop region that separates the semiconductor substrate, forming an insulating film on the semiconductor substrate, forming a transparent electrode made of polycrystalline silicon on the insulating film, A step of depositing a high melting point metal film on the surface of the electrode, a step of silicidizing a portion of the transparent electrode in contact with the high melting point metal film by heat treatment, and a step of forming the high melting point metal located above the photoelectric conversion unit. Removing the film or the silicide film.

【００２４】なお、上記本発明の製造方法において、第
１の反射防止膜形成工程の後に、透明電極の表面に高融
点金属膜を被着させる工程と、熱処理により前記透明電
極の前記高融点金属膜と接した部分をシリサイド化する
工程と、その後でシリサイド化していない前記高融点金
属膜を除去する工程とを設けてもよい。あるいは、反射
防止膜形成工程の後に、前記透明電極の表面に高融点金
属膜を被着させる工程と、熱処理により前記透明電極の
前記高融点金属膜と接した部分をシリサイド化する工程
と、前記光電変換部の上方に位置する前記高融点金属膜
またはシリサイド膜を除去する工程とを設けてもよい。In the manufacturing method of the present invention, after the first antireflection film forming step, a step of depositing a high melting point metal film on the surface of the transparent electrode, and a step of heat treating the high melting point metal of the transparent electrode. The method may further include a step of silicidizing a portion in contact with the film, and a step of subsequently removing the refractory metal film that has not been silicided. Alternatively, after the anti-reflection film forming step, a step of applying a high melting point metal film on the surface of the transparent electrode, and a step of silicidizing a portion of the transparent electrode in contact with the high melting point metal film by heat treatment; Removing the refractory metal film or the silicide film located above the photoelectric conversion unit.

【００２５】本発明の他の固体撮像装置の製造方法は、
第１導電型の半導体基板の表面にイオン注入により前記
第１導電型と逆の導電型である第２導電型の光電変換領
域を形成する工程と、前記第２導電型の各光電変換領域
間を分離する第１導電型のチャネルストップ領域を形成
する工程と、前記半導体基板上に絶縁膜を形成する工程
と、該絶縁膜上に多結晶シリコンからなる透明電極を形
成する工程と、該透明電極の表面に高融点金属膜を被着
させる工程と、熱処理により前記透明電極の前記高融点
金属膜と接した部分をシリサイド化する工程と、前記光
電変換領域の上方に位置する前記高融点金属膜またはシ
リサイド膜を除去する工程と、前記透明電極表面の前記
光電変換領域の上方に位置する箇所に前記透明電極の屈
折率よりも小さい屈折率の第１の反射防止膜を形成する
工程とを有することを特徴とするものである。According to another method of manufacturing a solid-state imaging device of the present invention,
Forming a second conductivity type photoelectric conversion region having a conductivity type opposite to the first conductivity type by ion implantation on a surface of the first conductivity type semiconductor substrate; Forming a first conductivity type channel stop region that separates the semiconductor substrate, forming an insulating film on the semiconductor substrate, forming a transparent electrode made of polycrystalline silicon on the insulating film, A step of depositing a high melting point metal film on the surface of the electrode, a step of silicidizing a portion of the transparent electrode in contact with the high melting point metal film by heat treatment, and a step of forming the high melting point metal located above the photoelectric conversion region. Removing a film or a silicide film; and forming a first anti-reflection film having a refractive index smaller than the refractive index of the transparent electrode at a position located above the photoelectric conversion region on the surface of the transparent electrode. Have The one in which the features.

【００２６】本発明の他の固体撮像装置の製造方法は、
第１導電型の半導体基板の表面にイオン注入により前記
第１導電型と逆の導電型である第２導電型の光電変換領
域を形成する工程と、前記第２導電型の各光電変換領域
間を分離する第１導電型のチャネルストップ領域を形成
する工程と、前記半導体基板上に絶縁膜を形成する工程
と、該絶縁膜上に透明電極を形成する工程と、該透明電
極の表面に金属膜を被着させる工程と、前記光電変換領
域の上方に位置する前記金属膜を除去する工程とを有す
ることを特徴とするものである。Another method for manufacturing a solid-state imaging device according to the present invention is as follows.
Forming a second conductivity type photoelectric conversion region having a conductivity type opposite to the first conductivity type by ion implantation on a surface of the first conductivity type semiconductor substrate; Forming a channel stop region of the first conductivity type for separating the first conductive type, forming an insulating film on the semiconductor substrate, forming a transparent electrode on the insulating film, and forming a metal on the surface of the transparent electrode. A step of applying a film and a step of removing the metal film located above the photoelectric conversion region.

【００２７】なお、前記第１の反射防止膜形成工程の後
に、前記透明電極の表面に金属膜を被着させる工程と、
前記光電変換領域の上方に位置する前記金属膜を除去す
る工程とを設けてもよい。また、前記金属膜除去工程の
後に、前記透明電極表面の前記光電変換領域の上方に位
置する箇所に前記透明電極の屈折率よりも小さい屈折率
の反射防止膜を形成する工程を設けてもよい。[0027] After the first anti-reflection film forming step, a step of applying a metal film on the surface of the transparent electrode;
Removing the metal film located above the photoelectric conversion region. Further, after the metal film removing step, a step of forming an antireflection film having a refractive index smaller than the refractive index of the transparent electrode may be provided at a position on the surface of the transparent electrode above the photoelectric conversion region. .

【００２８】いずれにしても、本発明の固体撮像装置の
製造方法を用いることにより、転送効率や転送電荷量の
低下が生じることなく、感度や解像度に優れた固体撮像
装置を製造することができる。光電変換領域における透
明電極の膜厚の薄い部分、光電変換領域における第１の
反射防止膜、光電変換領域以外の領域における遮光膜の
３つの構成要素を兼ね備えた固体撮像装置の場合、製造
工程としては、透明電極の膜厚の薄い部分の形成、第１
の反射防止膜の形成、遮光膜の形成、の順番を採ること
ができる。もしくは、第１の反射防止膜の形成と遮光膜
の形成の順番は、遮光膜の形成を先に行い、第１の反射
防止膜の形成を後で行うようにしてもよい。In any case, by using the method for manufacturing a solid-state imaging device of the present invention, a solid-state imaging device having excellent sensitivity and resolution can be manufactured without lowering transfer efficiency and transfer charge amount. . In the case of a solid-state imaging device having three components, that is, a thin portion of the transparent electrode in the photoelectric conversion region, a first antireflection film in the photoelectric conversion region, and a light-shielding film in a region other than the photoelectric conversion region, Indicates the formation of a thin portion of the transparent electrode,
The formation of the anti-reflection film and the formation of the light-shielding film can be performed in this order. Alternatively, the formation of the first anti-reflection film and the formation of the light-shielding film may be performed in such a manner that the formation of the light-shielding film is performed first and the formation of the first anti-reflection film is performed later.

【００２９】また、遮光膜の形成に関しては、多結晶シ
リコンからなる透明電極上に高融点金属膜を被着させ、
熱処理により透明電極の高融点金属膜と接した部分をシ
リサイド化し、さらに光電変換領域上の高融点金属膜ま
たはシリサイド膜を除去することにより、シリサイド膜
からなる遮光膜を形成することができる。あるいは、単
に透明電極上に金属膜を被着させ、光電変換領域上の金
属膜を除去することにより、金属膜からなる遮光膜を形
成することも可能である。As for the formation of the light-shielding film, a high-melting-point metal film is deposited on a transparent electrode made of polycrystalline silicon.
The light-shielding film made of a silicide film can be formed by silicidizing a portion of the transparent electrode which is in contact with the high-melting metal film by heat treatment and removing the high-melting metal film or the silicide film on the photoelectric conversion region. Alternatively, it is also possible to form a light-shielding film made of a metal film by simply applying a metal film on the transparent electrode and removing the metal film on the photoelectric conversion region.

【００３０】[0030]

【発明の実施の形態】［第１の実施の形態］以下、本発
明の第１の実施の形態を図１〜図４を参照して説明す
る。図１は本実施の形態のフレーム転送方式のＣＣＤ型
固体撮像装置の垂直電荷転送部を兼ねる光電変換領域の
構成を示す平面図、図２は透明電極の長手方向に沿って
切断した状態を示す（図１のＡ−Ａ線に沿う）断面図、
図３は３本の透明電極を横断する方向に沿って切断した
状態を示す（図１のＢ−Ｂ線に沿う）断面図、図４は固
体撮像装置の製造プロセスを示す工程断面図、である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS [First Embodiment] A first embodiment of the present invention will be described below with reference to FIGS. FIG. 1 is a plan view showing a configuration of a photoelectric conversion region also serving as a vertical charge transfer section of a frame type CCD solid-state imaging device according to the present embodiment, and FIG. 2 shows a state where the transparent electrode is cut along a longitudinal direction. Sectional view (along line AA in FIG. 1),
3 is a cross-sectional view (along line BB in FIG. 1) showing a state cut along a direction crossing the three transparent electrodes, and FIG. 4 is a cross-sectional view showing a process of manufacturing the solid-state imaging device. is there.

【００３１】本実施の形態のＣＣＤ型固体撮像装置の垂
直電荷転送部を兼ねる光電変換領域は、図１に示すよう
に、横方向に延びた透明電極１が複数本形成され、各透
明電極１に沿って多数の垂直電荷転送部を兼ねる光電変
換領域２が形成されるとともに、各垂直電荷転送部を兼
ねる光電変換領域２、２間を分離する多数のチャネルス
トップ領域３が形成されている。As shown in FIG. 1, a plurality of transparent electrodes 1 extending in the horizontal direction are formed in the photoelectric conversion region also serving as a vertical charge transfer portion of the CCD solid-state imaging device according to the present embodiment. Are formed along with a large number of photoelectric conversion regions 2 also serving as vertical charge transfer units, and a large number of channel stop regions 3 separating the photoelectric conversion regions 2 and 2 also serving as vertical charge transfer units.

【００３２】断面構造としては、図２、図３に示すよう
に、Ｐ型シリコン基板４表面にＮ型不純物が導入された
Ｎ型領域５が形成され、この部分が垂直電荷転送部を兼
ねる光電変換領域２となっている。また、透明電極１に
沿って隣接するＮ型領域５、５間に基板４より高濃度で
Ｐ型不純物が導入されたＰ+型領域６が形成され、この
部分がチャネルストップ領域３となっている。そして、
基板４上に絶縁層７（第１の絶縁層）を介して透明電極
１が形成されている。As shown in FIGS. 2 and 3, an N-type region 5 into which an N-type impurity is introduced is formed on the surface of a P-type silicon substrate 4, and this portion serves as a vertical charge transfer portion. This is the conversion area 2. A P + -type region 6 in which a P-type impurity is introduced at a higher concentration than the substrate 4 is formed between adjacent N-type regions 5 and 5 along the transparent electrode 1, and this portion becomes a channel stop region 3. I have. And
The transparent electrode 1 is formed on a substrate 4 via an insulating layer 7 (first insulating layer).

【００３３】この透明電極１は垂直電荷転送部を兼ねる
光電変換領域２の部分の膜厚がチャネルストップ領域３
の部分の膜厚よりも薄く形成され、さらに、透明電極１
のうち、垂直電荷転送部を兼ねる光電変換領域２にあた
る膜厚が薄い部分の上に第１の反射防止膜８が形成され
ている。図３に示すように、隣接する３本の透明電極１
の全ての上面に第１の反射防止膜８が形成されている。
そして、これら透明電極１および第１の反射防止膜８を
覆うように平坦化層９（第２の絶縁層）が形成されてい
る。The thickness of the transparent electrode 1 in the portion of the photoelectric conversion region 2 also serving as the vertical charge transfer portion is the channel stop region 3
Of the transparent electrode 1
Among them, the first anti-reflection film 8 is formed on a thin portion corresponding to the photoelectric conversion region 2 also serving as a vertical charge transfer portion. As shown in FIG. 3, three adjacent transparent electrodes 1
The first antireflection film 8 is formed on all upper surfaces of the first and second substrates.
Then, a planarizing layer 9 (second insulating layer) is formed so as to cover the transparent electrode 1 and the first antireflection film 8.

【００３４】本実施の形態の場合、各層の構成材料の一
例として、第１の絶縁層７にシリコン酸化膜、透明電極
１に多結晶シリコン、第１の反射防止膜８にシリコン窒
化膜、平坦化層９にシリコン酸化膜が用いられる。その
場合、透明電極１、第１の反射防止膜８、平坦化層９の
各層の屈折率は、下から順に約５，約２，約１．４５と
なる。各層の屈折率は下から順にだんだんと大きくなっ
ていることが望ましい。In the case of the present embodiment, as an example of a constituent material of each layer, a silicon oxide film for the first insulating layer 7, polycrystalline silicon for the transparent electrode 1, a silicon nitride film for the first antireflection film 8, and a flat A silicon oxide film is used for the oxide layer 9. In that case, the refractive indexes of the transparent electrode 1, the first antireflection film 8, and the planarizing layer 9 are about 5, about 2, and about 1.45 in order from the bottom. It is desirable that the refractive index of each layer be gradually increased from the bottom.

【００３５】次に、上記構成のＣＣＤ型固体撮像装置の
製造方法の一例を図４を用いて説明する。なお、図４
（ａ）〜（ｄ）は図２と同じ方向から見た断面図であ
る。まず、図４（ａ）に示すように、Ｐ型シリコン基板
４表面にＮ型領域５、Ｐ+型領域６を形成し、それぞれ
垂直電荷転送部を兼ねる光電変換領域２、チャネルスト
ップ領域３とする。次いで、全面に絶縁層７となるシリ
コン酸化膜を成膜した後、全面に透明電極の一部となる
多結晶シリコンを３００〜６００ｎｍ程度の膜厚で一旦
成膜し、この多結晶シリコン膜を垂直電荷転送部を兼ね
る光電変換領域の部分を除去し、垂直電荷転送部を兼ね
る光電変換領域以外の部分を残すようにパターニングす
る（符号１０の部分）。なお、垂直電荷転送部を兼ねる
光電変換領域以外の部分に残る多結晶シリコンの膜厚
は、抵抗値を下げるためには厚い方が好ましいが、８０
０ｎｍよりも厚くなると、加工時に側壁部の形状に問題
が生じる場合がある。したがって、一般的には３００〜
６００ｎｍ程度が適当である。Next, an example of a method of manufacturing the CCD solid-state imaging device having the above-described configuration will be described with reference to FIG. FIG.
(A)-(d) is sectional drawing seen from the same direction as FIG. First, as shown in FIG. 4A, an N-type region 5 and a P + -type region 6 are formed on the surface of a P-type silicon substrate 4, and a photoelectric conversion region 2 also serving as a vertical charge transfer portion, and a channel stop region 3, respectively. I do. Next, after a silicon oxide film serving as the insulating layer 7 is formed on the entire surface, polycrystalline silicon serving as a part of the transparent electrode is once formed on the entire surface to a thickness of about 300 to 600 nm, and this polycrystalline silicon film is formed. Patterning is performed so as to remove the portion of the photoelectric conversion region also serving as the vertical charge transfer portion and to leave the portion other than the photoelectric conversion region also serving as the vertical charge transfer portion (reference numeral 10). Note that the thickness of the polycrystalline silicon remaining in portions other than the photoelectric conversion region also serving as the vertical charge transfer portion is preferably large in order to reduce the resistance value.
If the thickness is larger than 0 nm, a problem may occur in the shape of the side wall during processing. Therefore, generally 300-
About 600 nm is appropriate.

【００３６】次に、図４（ｂ）に示すように、全面に多
結晶シリコンを２００ｎｍ程度の膜厚で再度成膜するこ
とにより、膜厚が垂直電荷転送部を兼ねる光電変換領域
で薄く、それ以外の部で厚い段差を有する透明電極１を
形成する。Next, as shown in FIG. 4B, polycrystalline silicon is again formed on the entire surface to a thickness of about 200 nm, so that the thickness is small in the photoelectric conversion region also serving as the vertical charge transfer portion. The transparent electrode 1 having a thick step is formed in other portions.

【００３７】次に、図４（ｃ）に示すように、全面に第
１の反射防止膜８となる例えばシリコン窒化膜をＣＶＤ
法等を用いて５０ｎｍ程度の膜厚となるように成膜す
る。Next, as shown in FIG. 4C, for example, a silicon nitride film to be the first antireflection film 8 is formed on the entire surface by CVD.
The film is formed to a thickness of about 50 nm by using a method or the like.

【００３８】次に、図４（ｄ）に示すように、垂直電荷
転送部を兼ねる光電変換領域にあたる第１の反射防止膜
８（シリコン窒化膜）上にレジストパターン１１を形成
した後、レジストパターン１１をマスクとしたシリコン
窒化膜のエッチングを行い、レジストパターン１１が形
成されていない領域、つまり垂直電荷転送部を兼ねる光
電変換領域以外の領域のシリコン窒化膜を除去する。こ
れにより、透明電極１上の垂直電荷転送部を兼ねる光電
変換領域２にあたる箇所にのみ第１の反射防止膜８を残
す。Next, as shown in FIG. 4D, after a resist pattern 11 is formed on the first antireflection film 8 (silicon nitride film) corresponding to a photoelectric conversion region also serving as a vertical charge transfer section, the resist pattern is formed. The silicon nitride film is etched by using the mask 11 as a mask to remove the silicon nitride film in a region where the resist pattern 11 is not formed, that is, in a region other than the photoelectric conversion region also serving as the vertical charge transfer portion. As a result, the first antireflection film 8 is left only on the portion corresponding to the photoelectric conversion region 2 also serving as the vertical charge transfer portion on the transparent electrode 1.

【００３９】最後に、レジストパターン１１を除去した
後、全面に平坦化層９となるシリコン酸化膜を成膜する
ことにより、本実施の形態のＣＣＤ型固体撮像装置が完
成する。Finally, after removing the resist pattern 11, a silicon oxide film to be the flattening layer 9 is formed on the entire surface, thereby completing the CCD type solid-state imaging device of the present embodiment.

【００４０】本実施の形態のＣＣＤ型固体撮像装置にお
いては、透明電極１表面の垂直電荷転送部を兼ねる光電
変換領域２にあたる箇所に第１の反射防止膜８が形成さ
れているため、第１の反射防止膜を持たない従来のもの
と比較して垂直電荷転送部を兼ねる光電変換領域への光
の透過率が高くなる。これにより、感度を向上させるこ
とができる。また、透明電極１に多結晶シリコン、第１
の反射防止膜８にシリコン窒化膜やシリコン酸化窒化
膜、平坦化層９にシリコン酸化膜を用いているので、屈
折率が下から順に約５，約２，約１．４５となり、各層
の界面での全反射が確実に防止され、透過率の向上に寄
与することができる。In the CCD type solid-state imaging device according to the present embodiment, the first anti-reflection film 8 is formed on the surface of the transparent electrode 1 at the position corresponding to the photoelectric conversion region 2 also serving as the vertical charge transfer portion. The light transmittance to the photoelectric conversion region also serving as a vertical charge transfer portion is higher than that of a conventional device having no anti-reflection film. Thereby, the sensitivity can be improved. The transparent electrode 1 is made of polycrystalline silicon,
Since a silicon nitride film or a silicon oxynitride film is used for the anti-reflection film 8 and a silicon oxide film is used for the flattening layer 9, the refractive index is about 5, about 2, about 1.45 in order from the bottom, and the interface of each layer is Can be reliably prevented, which can contribute to an improvement in transmittance.

【００４１】それに加えて、本実施の形態の場合、透明
電極１のうちの垂直電荷転送部を兼ねる光電変換領域２
にあたる部分の膜厚がそれ以外の部分の膜厚よりも薄く
なっているので、透明電極１内での乱反射等が防止さ
れ、光の透過率がより向上し、感度をより向上させるこ
とができる。In addition, in the case of this embodiment, the photoelectric conversion region 2 of the transparent electrode 1 also serving as a vertical charge transfer portion
Is thinner than the other portions, irregular reflection and the like in the transparent electrode 1 are prevented, the light transmittance is further improved, and the sensitivity can be further improved. .

【００４２】また、垂直電荷転送部を兼ねる光電変換領
域２以外にあたる部分の透明電極１の膜厚は厚く形成さ
れているため、透明電極の膜厚をどの箇所も同じにし、
透過率向上のために膜厚を一様に薄くした従来の場合に
比べて、配線抵抗を低減することができる。その結果、
パルスなまり等が生じることがなく、転送効率や転送電
荷量の低下が生じることがない。更に、光電変換領域２
以外の領域には反射防止膜が形成されていないため、全
面に形成するよりも解像度を向上することができる。Further, since the thickness of the transparent electrode 1 other than the photoelectric conversion region 2 also serving as the vertical charge transfer portion is formed to be thick, the thickness of the transparent electrode is set to be the same at any position.
Wiring resistance can be reduced as compared with the conventional case where the film thickness is uniformly reduced to improve the transmittance. as a result,
There is no pulse rounding or the like, and there is no reduction in transfer efficiency or transfer charge amount. Further, the photoelectric conversion region 2
Since the anti-reflection film is not formed in other regions, the resolution can be improved as compared with the case where the anti-reflection film is formed on the entire surface.

【００４３】なお、本実施の形態の固体撮像装置の製造
方法においては、垂直電荷転送部を兼ねる光電変換領域
２部分の透明電極１を薄くする方法として、垂直電荷転
送部を兼ねる光電変換領域２以外の膜厚を厚くする箇所
に多結晶シリコンのパターンを形成した後、再度全面に
多結晶シリコンを成長させる方法を用いたため、多結晶
シリコンのダメージが少なく、光電変換領域２の光の透
過率を均一に制御しやすいが、この方法に代えて、多結
晶シリコンを初めから厚く成長させ、垂直電荷転送部を
兼ねる光電変換領域の部分を一部エッチングして薄くす
るという方法を採ることもできる。In the method of manufacturing the solid-state imaging device according to the present embodiment, as a method of thinning the transparent electrode 1 in the portion of the photoelectric conversion region 2 also serving as the vertical charge transfer portion, the photoelectric conversion region 2 serving also as the vertical charge transfer portion is used. Since a method of forming a polycrystalline silicon pattern at a place where the film thickness is increased other than the above and then growing the polycrystalline silicon over the entire surface was used, the damage of the polycrystalline silicon was small and the light transmittance of the photoelectric conversion region 2 was small. However, instead of this method, it is also possible to adopt a method in which polycrystalline silicon is grown thick from the beginning, and a portion of the photoelectric conversion region also serving as a vertical charge transfer portion is partially etched and thinned. .

【００４４】［第２の実施の形態］以下、本発明の第２
の実施の形態を図５、図６を参照して説明する。図５は
本実施の形態のフレーム転送方式のＣＣＤ型固体撮像装
置の構成を示す断面図（透明電極の長手方向に沿って切
断した状態）、図６は同、固体撮像装置の製造プロセス
を示す工程断面図、である。ここでは、平面図、透明電
極を横断する方向に沿って切断した断面図については、
第１の実施の形態とほぼ同様であるため、図示を省略す
る。なお、図５、図６において、図２、図４と共通の構
成要素には同一の符号を付す。[Second Embodiment] Hereinafter, a second embodiment of the present invention will be described.
The embodiment will be described with reference to FIGS. FIG. 5 is a cross-sectional view (a state cut along the longitudinal direction of a transparent electrode) showing a configuration of a frame transfer type CCD solid-state imaging device according to the present embodiment, and FIG. 6 shows a manufacturing process of the solid-state imaging device. It is a process sectional view. Here, for the plan view and the cross-sectional view cut along the direction crossing the transparent electrode,
Since it is almost the same as the first embodiment, illustration is omitted. 5 and 6, the same reference numerals are given to the same components as those in FIGS. 2 and 4.

【００４５】本実施の形態のＣＣＤ型固体撮像装置は、
図５に示すように、Ｐ型シリコン基板４表面に垂直電荷
転送部を兼ねる光電変換領域２をなすＮ型領域５が形成
されるとともに、チャネルストップ領域３をなすＰ+型
領域６が形成されている。また、基板４上に例えばシリ
コン酸化膜からなる絶縁層７（第１の絶縁層）を介して
透明電極１が形成されている。The CCD type solid-state imaging device according to the present embodiment
As shown in FIG. 5, an N-type region 5 serving as a photoelectric conversion region 2 also serving as a vertical charge transfer portion is formed on a surface of a P-type silicon substrate 4, and a P + -type region 6 serving as a channel stop region 3 is formed. ing. The transparent electrode 1 is formed on the substrate 4 via an insulating layer 7 (first insulating layer) made of, for example, a silicon oxide film.

【００４６】この透明電極１は多結晶シリコンにより形
成されており、チャネルストップ領域３の上方にあたる
多結晶シリコンは表面がシリサイド化され、例えばチタ
ンシリサイド、タングステンシリサイド等の高融点金属
のシリサイド層となり、このシリサイド層がチャネルス
トップ領域３の上方を覆う遮光膜１２となっている。ま
た、透明電極１上の垂直電荷転送部を兼ねる光電変換領
域２にあたる部分に第１の反射防止膜８が形成されてい
る。そして、これら第１の反射防止膜８および遮光膜１
２を覆うように平坦化層９（第２の絶縁層）が形成され
ている。本実施の形態の場合も、各層の材料は第１の実
施の形態と同様のものを用いることができる。The transparent electrode 1 is formed of polycrystalline silicon. The surface of the polycrystalline silicon above the channel stop region 3 is silicided, and becomes a silicide layer of a refractory metal such as titanium silicide or tungsten silicide. This silicide layer serves as a light shielding film 12 covering the upper part of the channel stop region 3. Further, a first antireflection film 8 is formed on a portion of the transparent electrode 1 corresponding to the photoelectric conversion region 2 also serving as a vertical charge transfer portion. Then, the first antireflection film 8 and the light shielding film 1
A flattening layer 9 (second insulating layer) is formed so as to cover 2. Also in the case of the present embodiment, the same material as in the first embodiment can be used for each layer.

【００４７】次に、上記構成のＣＣＤ型固体撮像装置の
製造方法の一例を図６を用いて説明する。まず、図６
（ａ）に示すように、Ｐ型シリコン基板４表面にＮ型領
域５、Ｐ+型領域６を形成し、それぞれ垂直電荷転送部
を兼ねる光電変換領域２、チャネルストップ領域３とす
る。次いで、全面に絶縁層７となるシリコン酸化膜を成
膜した後、全面に透明電極１となる多結晶シリコンを２
００ｎｍ程度の膜厚で成膜する。次いで、全面に第１の
反射防止膜８となる例えばシリコン窒化膜をＣＶＤ法等
を用いて５０ｎｍ程度の膜厚となるように成膜する。Next, an example of a method for manufacturing the CCD solid-state imaging device having the above-described configuration will be described with reference to FIG. First, FIG.
As shown in (a), an N-type region 5 and a P + -type region 6 are formed on the surface of a P-type silicon substrate 4 to be a photoelectric conversion region 2 also serving as a vertical charge transfer portion and a channel stop region 3, respectively. Next, after a silicon oxide film serving as an insulating layer 7 is formed on the entire surface, polycrystalline silicon serving as a transparent electrode 1 is
The film is formed with a thickness of about 00 nm. Next, for example, a silicon nitride film to be the first anti-reflection film 8 is formed on the entire surface to a thickness of about 50 nm by a CVD method or the like.

【００４８】次に、図６（ｂ）に示すように、垂直電荷
転送部を兼ねる光電変換領域２にあたる第１の反射防止
膜８（シリコン窒化膜）上にレジストパターン１１を形
成した後、レジストパターン１１をマスクとしたシリコ
ン窒化膜のエッチングを行い、レジストパターン１１が
形成されていない領域、つまり垂直電荷転送部を兼ねる
光電変換領域２以外の領域のシリコン窒化膜を除去す
る。これにより、透明電極１上の垂直電荷転送部を兼ね
る光電変換領域２にあたる箇所にのみ第１の反射防止膜
８が形成され、垂直電荷転送部を兼ねる光電変換領域２
以外の箇所は透明電極１の多結晶シリコンが露出した状
態となる。Next, as shown in FIG. 6B, a resist pattern 11 is formed on the first antireflection film 8 (silicon nitride film) corresponding to the photoelectric conversion region 2 also serving as a vertical charge transfer portion. The silicon nitride film is etched using the pattern 11 as a mask, and the silicon nitride film in the region where the resist pattern 11 is not formed, that is, the region other than the photoelectric conversion region 2 also serving as the vertical charge transfer portion is removed. As a result, the first antireflection film 8 is formed only on the portion corresponding to the photoelectric conversion region 2 on the transparent electrode 1 which also serves as the vertical charge transfer portion, and the photoelectric conversion region 2 also serves as the vertical charge transfer portion.
Other portions are in a state where the polycrystalline silicon of the transparent electrode 1 is exposed.

【００４９】次に、レジストパターン１１を除去した
後、図６（ｃ）に示すように、全面にスパッタ法等を用
いてチタン、タングステン等の高融点金属膜１３を５０
ｎｍ程度の膜厚で成膜する。Next, after the resist pattern 11 is removed, as shown in FIG. 6C, a refractory metal film 13 of titanium, tungsten or the like is formed on the entire surface by sputtering or the like.
The film is formed with a thickness of about nm.

【００５０】次に、例えばＡｒ等の不活性ガス雰囲気
下、温度６００℃、時間３０分程度の条件で熱処理を行
うと、図６（ｄ）に示すように、透明電極１の多結晶シ
リコンと高融点金属膜１３が直接接触した箇所でのみシ
リサイド化反応が生じるため、結果として、チャネルス
トップ領域３の上方にチタンシリサイド、タングステン
シリサイド等の高融点金属のシリサイド層からなる遮光
膜１２が形成される。Next, a heat treatment is performed in an atmosphere of an inert gas such as Ar at a temperature of 600 ° C. for a time period of about 30 minutes, as shown in FIG. Since the silicidation reaction occurs only at the place where the high melting point metal film 13 is in direct contact, the light shielding film 12 made of a silicide layer of a high melting point metal such as titanium silicide or tungsten silicide is formed above the channel stop region 3. You.

【００５１】最後に、シリサイド化していない高融点金
属膜１３を除去した後、全面に平坦化層９となるシリコ
ン酸化膜を成膜することにより、本実施の形態のＣＣＤ
型固体撮像装置が完成する。Finally, after removing the high-melting-point metal film 13 that has not been silicided, a silicon oxide film serving as the flattening layer 9 is formed on the entire surface, whereby the CCD of the present embodiment is formed.
The solid-state imaging device is completed.

【００５２】本実施の形態のＣＣＤ型固体撮像装置にお
いても、透明電極１表面の垂直電荷転送部を兼ねる光電
変換領域２上に第１の反射防止膜８が形成されているた
め、垂直電荷転送部を兼ねる光電変換領域２への光の透
過率が高くなり、感度が向上する、という第１の実施の
形態と同様の効果を奏することができる。Also in the CCD type solid-state imaging device according to the present embodiment, since the first antireflection film 8 is formed on the photoelectric conversion region 2 also serving as a vertical charge transfer portion on the surface of the transparent electrode 1, the vertical charge transfer is performed. The same effect as in the first embodiment, in which the transmittance of light to the photoelectric conversion region 2 also serving as a portion is increased and the sensitivity is improved, can be obtained.

【００５３】また、チャネルストップ領域３にあたる透
明電極１上に遮光膜１２が形成されているため、チャネ
ルストップ領域３上に入射する光が遮光膜１２により遮
光され、任意の垂直電荷転送部を兼ねる光電変換領域２
に入射される光が隣接する垂直電荷転送部を兼ねる光電
変換領域２にも同時に入射されるのを防止するため、従
来の装置に比べて解像度を向上させることができる。Since the light-shielding film 12 is formed on the transparent electrode 1 corresponding to the channel stop region 3, light incident on the channel stop region 3 is shielded by the light-shielding film 12, and also serves as an arbitrary vertical charge transfer portion. Photoelectric conversion area 2
Is prevented from being simultaneously incident on the photoelectric conversion region 2 also serving as the adjacent vertical charge transfer portion, so that the resolution can be improved as compared with the conventional device.

【００５４】本実施の形態の場合、チャネルストップ領
域３上方の透明電極表面がシリサイド化されているた
め、この領域においては多結晶シリコン部分の膜厚だけ
見れば垂直電荷転送部を兼ねる光電変換領域２よりも薄
くなっている。ところが、チタンシリサイド、タングス
テンシリサイド等の材料は多結晶シリコンよりも比抵抗
が小さいため、このシリサイド層が遮光膜１２としての
役目を果たすのみならず、透明電極１が薄くなったこと
による抵抗の増大分を相殺し、さらに単位面積当たりの
比抵抗を小さくするという役目を果たす。その結果、高
い配線抵抗に起因するパルスなまり等の問題が生じるこ
とがなく、転送効率や転送電荷量の低下を防止すること
ができる。In the case of the present embodiment, since the surface of the transparent electrode above the channel stop region 3 is silicided, in this region, the photoelectric conversion region which also serves as a vertical charge transfer portion, if only the film thickness of the polycrystalline silicon portion is viewed. It is thinner than 2. However, since materials such as titanium silicide and tungsten silicide have lower specific resistance than polycrystalline silicon, this silicide layer not only functions as a light-shielding film 12, but also increases in resistance due to the thinner transparent electrode 1. It plays a role of canceling the balance and further reducing the specific resistance per unit area. As a result, problems such as pulse rounding due to high wiring resistance do not occur, and a decrease in transfer efficiency and transfer charge amount can be prevented.

【００５５】さらに、本実施の形態の製造方法は、先に
垂直電荷転送部を兼ねる光電変換領域２のみに第１の反
射防止膜８を形成し、全面に高融点金属膜１３を成膜し
た後、透明電極１の多結晶シリコンと高融点金属膜１３
が直接接触した箇所でのみシリサイド化反応を生じさ
せ、チャネルストップ部３上に選択的に遮光膜１２を形
成する方法である。そして、シリサイド層と高融点金属
とのエッチング選択性を利用して、次工程でシリサイド
化していない高融点金属膜１３のみを容易に除去するこ
とができる。したがって、高融点金属膜１３のパターニ
ング工程が不要であるという点で合理的な製造プロセス
である。Further, according to the manufacturing method of the present embodiment, first, the first antireflection film 8 is formed only on the photoelectric conversion region 2 also serving as the vertical charge transfer portion, and the refractory metal film 13 is formed on the entire surface. Then, the polycrystalline silicon of the transparent electrode 1 and the refractory metal film 13
Is a method in which a silicidation reaction is caused only at a position where the light-shielding film directly contacts, and the light shielding film 12 is selectively formed on the channel stop portion 3. Then, utilizing the etching selectivity between the silicide layer and the refractory metal, only the refractory metal film 13 that has not been silicided in the next step can be easily removed. Therefore, this is a reasonable manufacturing process in that a patterning step of the high melting point metal film 13 is unnecessary.

【００５６】［第３の実施の形態］以下、本発明の第３
の実施の形態を図７を参照して説明する。図７は本実施
の形態のフレーム転送方式のＣＣＤ型固体撮像装置の構
成を示す断面図（透明電極の長手方向に沿って切断した
状態）である。ここでは、平面図、透明電極を横断する
方向に沿って切断した断面図については、第１の実施の
形態とほぼ同様であるため、図示を省略する。なお、図
７において、図２と共通の構成要素には同一の符号を付
す。[Third Embodiment] Hereinafter, a third embodiment of the present invention will be described.
The embodiment will be described with reference to FIG. FIG. 7 is a cross-sectional view (a state cut along the longitudinal direction of the transparent electrode) illustrating the configuration of the frame type CCD solid-state imaging device according to the present embodiment. Here, a plan view and a cross-sectional view taken along a direction crossing the transparent electrode are substantially the same as those in the first embodiment, and thus are not illustrated. In FIG. 7, the same components as those in FIG. 2 are denoted by the same reference numerals.

【００５７】本実施の形態のＣＣＤ型固体撮像装置は、
図７に示すように、Ｐ型シリコン基板４表面に垂直電荷
転送部を兼ねる光電変換領域２をなすＮ型領域５が形成
されるとともに、チャネルストップ領域３をなすＰ+型
領域６が形成されている。また、基板４上に第２の反射
防止膜１４が形成され、その第２の反射防止膜１４を介
して例えばシリコン酸化膜からなる絶縁層７（第１の絶
縁層）、さらに絶縁膜７を介して透明電極１が形成され
ている。本実施の形態の場合、第１の実施の形態に比
べ、さらに、第２の反射防止膜を設けたことにより、さ
らに光の透過率を向上できるため、感度を向上すること
ができる。また、たとえば、図８のように第１の反射防
止膜８と透明電極１の間、あるいは第２の反射防止膜１
４とシリコン基板４の間に薄いシリコン酸化膜（第３、
第４の絶縁膜）１５、１６が形成されていてもよい。こ
の場合、第３の実施の形態に比べ、透明電極１と第１の
反射防止膜８、シリコン基板４と第２の反射防止膜１４
とのストレスを緩和することができる。The CCD type solid-state imaging device according to the present embodiment
As shown in FIG. 7, an N-type region 5 forming a photoelectric conversion region 2 also serving as a vertical charge transfer portion is formed on a surface of a P-type silicon substrate 4, and a P + type region 6 forming a channel stop region 3 is formed. ing. Further, a second anti-reflection film 14 is formed on the substrate 4, and the insulating layer 7 (first insulating layer) made of, for example, a silicon oxide film, and the insulating film 7 are further interposed via the second anti-reflection film 14. A transparent electrode 1 is formed through the transparent electrode 1. In the case of the present embodiment, the light transmittance can be further improved by providing the second antireflection film as compared with the first embodiment, so that the sensitivity can be improved. Further, for example, as shown in FIG. 8, between the first anti-reflection film 8 and the transparent electrode 1 or the second anti-reflection film 1
Between the silicon substrate 4 and the silicon substrate 4 (third,
Fourth insulating films) 15 and 16 may be formed. In this case, as compared with the third embodiment, the transparent electrode 1 and the first anti-reflection film 8, the silicon substrate 4 and the second anti-reflection film 14
And can relieve stress.

【００５８】［第４の実施の形態］図９は、本発明の第
４の実施の形態の固体撮像装置を示す断面図である。図
９に示すように、Ｐ型シリコン基板１１０面にＮ型不純
物が導入されたＮ型領域１０９が形成され、この部分が
光電変換領域となっている。さらにその上部に第４絶縁
膜１０７を介して第２の反射防止膜が形成され、さらに
その上部に第１の絶縁膜１０５を介してその上部の一部
に並列に透明電極１０４が形成されている。さらにその
上部に第３の絶縁膜１０３を介して第１の反射防止膜１
０２が形成されその上部には平坦化も兼ねた第２の絶縁
膜１０１が形成されている。このような構成により、転
送効率をより向上し、パルスなまりを防止することが可
能である。[Fourth Embodiment] FIG. 9 is a sectional view showing a solid-state imaging device according to a fourth embodiment of the present invention. As shown in FIG. 9, an N-type region 109 into which an N-type impurity is introduced is formed on the surface of a P-type silicon substrate 110, and this portion is a photoelectric conversion region. Further, a second anti-reflection film is formed thereon with a fourth insulating film 107 interposed therebetween, and a transparent electrode 104 is further formed thereon in parallel with a part of the upper portion thereof with a first insulating film 105 interposed therebetween. I have. Further, a first antireflection film 1 is formed on the first antireflection film 1 with a third insulating film 103 interposed therebetween.
The second insulating film 101 is formed on the upper surface of the second insulating film 101 and also serves as flattening. With such a configuration, it is possible to further improve transfer efficiency and prevent pulse rounding.

【００５９】［第５の実施の形態］図１０は本発明のフ
ォトカプラにおける受光素子部分の１例である。図１０
に示すように、Ｐ型シリコン基板２１０面にＮ型不純物
が導入されたＮ型領域２０９が形成され、この部分が光
電変換領域となっている。さらにその上部に第１の絶縁
膜２０５を介して、その上部にフォトダイオードの電位
が安定するためのフォトシールド役目を持つ透明電極２
０４がグランドに終端されるよう形成されている。さら
にその上部に第１の反射防止膜２０２が形成されてい
る。反射防止膜上部より入射した光は光電変換領域内で
光電変換される。そして発生した光電流による電位の変
動を検知し外部に出力する。透明電極上に反射防止膜を
形成することにより、透明電極を厚くして抵抗値を下げ
るとともに、光の透過率を向上することが可能である。
また、フォトカプラは、主に単色光を用いるため、光の
波長範囲が狭く、４分の１波長膜を用いることによっ
て、感度の著しい向上を望むことが可能である。フォト
カプラの場合には、受光部以外は遮光膜を兼ねたパッケ
ージ等で覆われているため、外部からの磁場をシールド
するため、受光面だけでなく、全面に反射防止膜を形成
することがより望ましい。このような受光素子はフォト
カプラ等のスイッチング素子に用いられるが、勿論、他
の光電変換装置においても適用可能である。[Fifth Embodiment] FIG. 10 shows an example of a light receiving element in a photocoupler according to the present invention. FIG.
As shown in FIG. 5, an N-type region 209 into which an N-type impurity is introduced is formed on the surface of a P-type silicon substrate 210, and this portion is a photoelectric conversion region. Further, a transparent electrode 2 having a role of a photo shield for stabilizing the potential of the photodiode is formed on the first insulating film 205 via a first insulating film 205.
04 is formed so as to be terminated to the ground. Further, a first antireflection film 202 is formed thereon. Light incident from above the antireflection film is photoelectrically converted in the photoelectric conversion region. Then, a potential change due to the generated photocurrent is detected and output to the outside. By forming the antireflection film on the transparent electrode, it is possible to increase the thickness of the transparent electrode to reduce the resistance value and to improve the light transmittance.
Further, since the photocoupler mainly uses monochromatic light, the wavelength range of the light is narrow, and by using a quarter-wave film, a remarkable improvement in sensitivity can be desired. In the case of a photocoupler, the parts other than the light-receiving part are covered with a package that also functions as a light-shielding film, so that an antireflection film can be formed not only on the light-receiving surface but also on the entire surface to shield external magnetic fields. More desirable. Such a light receiving element is used for a switching element such as a photocoupler, but can be applied to other photoelectric conversion devices.

【００６０】なお、本発明の技術範囲は上記実施の形態
に限定されるものではなく、本発明の趣旨を逸脱しない
範囲において種々の変更を加えることが可能である。例
えば本発明の最も特徴的な３つの構成要件は、（１）垂
直電荷転送部を兼ねる光電変換領域の透明電極の上方に
反射防止膜を設ける点、（２）垂直電荷転送部を兼ねる
光電変換領域の透明電極と、半導体基板間に反射防止膜
を設ける点、（３）垂直電荷転送部を兼ねる光電変換領
域の上方に位置する透明電極の膜厚をそれ以外の領域の
膜厚よりも薄くする点、（４）垂直電荷転送部を兼ねる
光電変換領域以外の領域の上方に遮光膜を設ける点、で
ある。これに対して、第１の実施の形態では、（１）お
よび（３）のみを備えた例、第２の実施の形態では、
（１）および（４）のみを備えた例、第３の実施の形態
では（１）、（２）および（３）を示したが、本発明の
固体撮像装置はこれら実施の形態に限るものではなく、
これら全ての要件を兼ね備えていてもよいし、いずれか
一つを備えていてもよい。The technical scope of the present invention is not limited to the above embodiment, and various changes can be made without departing from the spirit of the present invention. For example, the three characteristic features of the present invention are that (1) an antireflection film is provided above a transparent electrode in a photoelectric conversion region that also serves as a vertical charge transfer unit, and (2) a photoelectric conversion unit that also serves as a vertical charge transfer unit. (3) The thickness of the transparent electrode located above the photoelectric conversion region also serving as a vertical charge transfer portion is thinner than the thickness of the other regions. (4) A light shielding film is provided above a region other than the photoelectric conversion region also serving as a vertical charge transfer unit. On the other hand, in the first embodiment, an example in which only (1) and (3) are provided, and in the second embodiment,
In the third embodiment, (1), (2), and (3) are shown as examples provided with only (1) and (4), but the solid-state imaging device of the present invention is not limited to these embodiments. not,
All of these requirements may be provided, or any one of them may be provided.

【００６１】また、上記第２の実施の形態において、遮
光膜を高融点金属のシリサイド膜で形成したが、その
他、金属膜で形成するようにしてもよい。その場合、シ
リサイド化の熱処理工程が不要になるが、全面に金属膜
を成膜した後にパターニングを行い、垂直電荷転送部を
兼ねる光電変換領域にあたる部分を除去する工程が必要
になる。また、第２の実施の形態では、先に第１の反射
防止膜を形成した後、遮光膜を形成したが、パターニン
グにより遮光膜を形成する場合には、先に遮光膜を形成
した後、第１の反射防止膜を形成するという順番でもよ
い。In the second embodiment, the light-shielding film is formed of a silicide film of a refractory metal. However, the light-shielding film may be formed of a metal film. In that case, a heat treatment step of silicidation is not required, but a step of performing patterning after forming a metal film on the entire surface and removing a portion corresponding to a photoelectric conversion region also serving as a vertical charge transfer portion is required. In the second embodiment, the light shielding film is formed after the first antireflection film is formed. However, when the light shielding film is formed by patterning, the light shielding film is formed first. The order of forming the first antireflection film may be used.

【００６２】さらに、上記実施の形態では、隣接する３
本の透明電極の全ての上面に反射防止膜を形成したが、
フレーム転送型ＣＣＤ固体撮像装置の駆動方法によって
は、例えば１本の透明電極下のＮ型領域を垂直電荷転送
部を兼ねる光電変換領域として用い、残りの２本の透明
電極下のＮ型領域は専ら電荷転送領域として用いること
もある。そのような場合、本発明の固体撮像装置では少
なくとも垂直電荷転送部を兼ねる光電変換領域上にあた
る透明電極のみに第１の反射防止膜を形成するようにし
てもよい。Further, in the above embodiment, three adjacent
An anti-reflection film was formed on all upper surfaces of the transparent electrodes of the book,
Depending on the driving method of the frame transfer type CCD solid-state imaging device, for example, an N-type region under one transparent electrode is used as a photoelectric conversion region also serving as a vertical charge transfer unit, and an N-type region under the remaining two transparent electrodes is It may be used exclusively as a charge transfer region. In such a case, in the solid-state imaging device of the present invention, the first anti-reflection film may be formed only on the transparent electrode corresponding to at least the photoelectric conversion region also serving as the vertical charge transfer unit.

【００６３】また、上記実施の形態で挙げた各層の材料
以外にも種々の材料を用いることができる。例えば、第
１の反射防止膜の材料として、シリコン窒化膜、シリコ
ン酸化窒化膜に代えて、タンタル酸化膜（Ｔａ2 Ｏ
5 ）、ＢＳＴ（（Ｂａ，Ｓｒ）ＴａＯ3 ）等を用いるこ
とも可能である。なお、上述した実施例では、フレーム
転送型またはフルフレーム転送型固体撮像装置に関して
適用した実施例を示したが、さらに、本発明はこの範疇
に限らず、たとえばＣＭＯＳ型、あるいはＭＯＳ型の固
体撮像装置、フォトカプラ等に用いられる垂直電荷転送
部を兼ねる光電変換領域としても同様にして適用できる
のは言うまでもない。Various materials can be used in addition to the materials of each layer described in the above embodiment. For example, as the material of the first antireflection film, a tantalum oxide film (Ta 2 O) is used instead of the silicon nitride film and the silicon oxynitride film.
5 ), BST ((Ba, Sr) TaO 3 ) or the like can also be used. In the above-described embodiment, the embodiment applied to the frame transfer type or full frame transfer type solid-state imaging device has been described. However, the present invention is not limited to this category. For example, a CMOS type or a MOS type solid-state imaging device may be used. Needless to say, the present invention can be similarly applied to a photoelectric conversion region which also serves as a vertical charge transfer unit used in a device, a photocoupler, or the like.

【００６４】[0064]

【発明の効果】以上、詳細に説明したように、本発明に
よれば、垂直電荷転送部を兼ねる光電変換領域の上方に
反射防止膜を設けたこと、もしくは透明電極のうちの垂
直電荷転送部を兼ねる光電変換領域部分の膜厚を薄くし
たことにより、垂直電荷転送部を兼ねる光電変換領域へ
の光の透過率が向上するため、感度を向上させることが
できる。また、垂直電荷転送部を兼ねる光電変換領域以
外にあたる部分の透明電極の膜厚は厚く形成されること
により、透明電極の膜厚を一様に薄くした従来の場合に
比べて配線抵抗を低減できるため、パルスなまり等が生
じることがなく、転送効率や転送電荷量の低下を防止す
ることができる。さらに、垂直電荷転送部を兼ねる光電
変換領域以外の領域上に遮光膜を設けたことにより、任
意の垂直電荷転送部を兼ねる光電変換領域に入射される
光が隣接する垂直電荷転送部を兼ねる光電変換部にも入
射されるのを防止するため、解像度を向上することがで
きる。さらに、第２の反射防止膜を設けたことにより、
さらに光の透過率を向上できるため、感度を向上するこ
とができる。すなわち、転送効率や転送電荷量の低下が
生じることなく、感度や解像度に優れたフレーム転送型
またはフルフレーム転送型固体撮像装置を実現すること
ができる。As described above in detail, according to the present invention, an antireflection film is provided above a photoelectric conversion region also serving as a vertical charge transfer portion, or a vertical charge transfer portion of a transparent electrode is provided. By reducing the film thickness of the photoelectric conversion region portion also serving as a vertical line, the transmittance of light to the photoelectric conversion region also serving as the vertical charge transfer portion is improved, so that the sensitivity can be improved. Further, the thickness of the transparent electrode other than the photoelectric conversion region also serving as the vertical charge transfer portion is formed to be thick, so that the wiring resistance can be reduced as compared with the conventional case in which the thickness of the transparent electrode is uniformly reduced. Therefore, pulse rounding does not occur, and a decrease in transfer efficiency and transfer charge amount can be prevented. Furthermore, by providing a light-shielding film on an area other than the photoelectric conversion area also serving as the vertical charge transfer section, light incident on the photoelectric conversion area also serving as an arbitrary vertical charge transfer section can be used as a photoelectric transfer area adjacent to the vertical charge transfer section. The resolution can be improved to prevent the light from entering the conversion unit. Further, by providing the second anti-reflection film,
Further, since the light transmittance can be improved, the sensitivity can be improved. That is, it is possible to realize a frame transfer type or full frame transfer type solid-state imaging device excellent in sensitivity and resolution without lowering transfer efficiency and transfer charge amount.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の第１の実施の形態であるＣＣＤ型固体
撮像装置の構成を示す平面図である。FIG. 1 is a plan view showing a configuration of a CCD solid-state imaging device according to a first embodiment of the present invention.

【図２】図１のＡ−Ａ線に沿う断面図である。FIG. 2 is a sectional view taken along line AA of FIG.

【図３】図１のＢ−Ｂ線に沿う断面図である。FIG. 3 is a sectional view taken along line BB of FIG. 1;

【図４】同、固体撮像装置の製造プロセスを示す工程断
面図である。FIG. 4 is a process cross-sectional view showing a manufacturing process of the solid-state imaging device.

【図５】本発明の第２の実施の形態であるＣＣＤ型固体
撮像装置の構成を示す断面図である。FIG. 5 is a cross-sectional view illustrating a configuration of a CCD solid-state imaging device according to a second embodiment of the present invention.

【図６】同、固体撮像装置の製造プロセスを示す工程断
面図である。FIG. 6 is a process sectional view illustrating the manufacturing process of the solid-state imaging device;

【図７】本発明の第３の実施の形態であるＣＣＤ型固体
撮像装置の構成を示す断面図である。FIG. 7 is a sectional view illustrating a configuration of a CCD solid-state imaging device according to a third embodiment of the present invention.

【図８】同、固体撮像装置の製造プロセスを示す工程断
面図である。FIG. 8 is a process cross-sectional view showing a manufacturing process of the solid-state imaging device.

【図９】本発明の第４の実施の形態であるＣＣＤ型固体
撮像装置の構成を示す断面図である。FIG. 9 is a sectional view illustrating a configuration of a CCD solid-state imaging device according to a fourth embodiment of the present invention.

【図１０】本発明の第５の実施の形態である光電変換装
置を示す断面図である。FIG. 10 is a sectional view showing a photoelectric conversion device according to a fifth embodiment of the present invention.

【図１１】 従来のフレーム転送方式のＣＣＤ型固体撮
像装置の構成の一例を示す断面図である。FIG. 11 is a cross-sectional view showing an example of the configuration of a conventional frame transfer type CCD solid-state imaging device.

【図１２】 同、固体撮像装置の製造プロセスを示す工
程断面図である。FIG. 12 is a process cross-sectional view showing the same solid-state imaging device manufacturing process.

【符号の説明】[Explanation of symbols]

１ 透明電極 ２ 垂直電荷転送部を兼ねる光電変換領域 ３ チャネルストップ領域 ４ Ｐ型シリコン基板（半導体基板） ５ Ｎ型領域 ６ Ｐ+型領域 ７ 絶縁層（第１の絶縁層） ８ 反射防止膜（第１の反射防止膜） ９ 平坦化層（第２の絶縁層） １２ 遮光膜 １３ 高融点金属膜 １４ 反射防止膜（第２の反射防止膜） １５ 絶縁膜（第３の絶縁膜） １６ 絶縁膜（第４の絶縁膜） ５０ Ｐ型シリコン基板（半導体基板） ５１ 垂直電荷転送部を兼ねる光電変換領域 ５２ Ｎ型領域 ５３ チャネルストップ領域 ５４ Ｐ+型領域 ５５ 絶縁層 ５６ 透明電極 ５７ 平坦化層 Reference Signs List 1 transparent electrode 2 photoelectric conversion region also serving as vertical charge transfer unit 3 channel stop region 4 P-type silicon substrate (semiconductor substrate) 5 N-type region 6 P + -type region 7 Insulating layer (first insulating layer) 8 Anti-reflection film ( 1st antireflection film) 9 planarization layer (second insulating layer) 12 light shielding film 13 refractory metal film 14 antireflection film (second antireflection film) 15 insulating film (third insulating film) 16 insulating Film (fourth insulating film) 50 P-type silicon substrate (semiconductor substrate) 51 Photoelectric conversion region also serving as vertical charge transfer unit 52 N-type region 53 Channel stop region 54 P + type region 55 Insulating layer 56 Transparent electrode 57 Flattening layer

フロントページの続き Ｆターム(参考） 4M118 AA01 AA03 AA10 AB01 BA12 BA14 CA08 CA40 CB13 CB14 DA03 DA18 DA20 DA28 FA06 FA26 GB15 Continued on the front page F-term (reference) 4M118 AA01 AA03 AA10 AB01 BA12 BA14 CA08 CA40 CB13 CB14 DA03 DA18 DA20 DA28 FA06 FA26 GB15

Claims (23)

【特許請求の範囲】[Claims] 【請求項１】 第１導電型の半導体基板と、 前記第１導電型の半導体基板上に形成された第１の絶縁
膜と、 前記第１の絶縁膜上に形成された透明電極と、 前記透明電極上に形成された第１の反射防止膜を有する
ことを特徴とする光電変換装置。A first conductive type semiconductor substrate; a first insulating film formed on the first conductive type semiconductor substrate; a transparent electrode formed on the first insulating film; A photoelectric conversion device comprising a first antireflection film formed on a transparent electrode. 【請求項２】 前記第１導電型半導体基板内であって、
前記透明電極下に、第２導電型領域を有することを特徴
とする特許請求の範囲第１項記載の光電変換装置。2. In the first conductivity type semiconductor substrate,
The photoelectric conversion device according to claim 1, further comprising a second conductivity type region below the transparent electrode. 【請求項３】 前記透明電極に所望の電圧が印加されて
いることを特徴とする特許請求の範囲第１、２項記載の
光電変換装置。3. The photoelectric conversion device according to claim 1, wherein a desired voltage is applied to said transparent electrode. 【請求項４】 前記第１の反射防止膜上に第２の絶縁膜
を有することを特徴とする特許請求の範囲第１〜３項記
載の光電変換装置。4. The photoelectric conversion device according to claim 1, further comprising a second insulating film on said first antireflection film. 【請求項５】 前記透明電極と第１の反射防止膜の間
に、第３の絶縁膜を有することを特徴とする特許請求の
範囲第１〜４項記載の光電変換装置。5. The photoelectric conversion device according to claim 1, further comprising a third insulating film between said transparent electrode and said first antireflection film. 【請求項６】 前記第３の絶縁膜の膜厚が、前記第２の
絶縁膜の膜厚より、薄いことを特徴とする特許請求の範
囲第５項記載の光電変換装置。6. The photoelectric conversion device according to claim 5, wherein a thickness of said third insulating film is smaller than a thickness of said second insulating film. 【請求項７】 前記第１の反射防止膜の屈折率が、前記
透明電極の屈折率と、前記第２の絶縁膜の屈折率の間の
屈折率であることを特徴とする特許請求の範囲第４、
５、６項記載の光電変換装置。7. The method according to claim 1, wherein a refractive index of the first antireflection film is a refractive index between a refractive index of the transparent electrode and a refractive index of the second insulating film. Fourth,
7. The photoelectric conversion device according to claim 5. 【請求項８】 前記第１導電型半導体基板と第１の絶縁
膜の間に、第２の反射防止膜を有することを特徴とする
特許請求の範囲第１〜７項記載の光電変換装置。8. The photoelectric conversion device according to claim 1, further comprising a second antireflection film between said first conductivity type semiconductor substrate and said first insulating film. 【請求項９】 前記第１導電型半導体基板と第２の反射
防止膜の間に、第４の絶縁膜を有することを特徴とする
特許請求の範囲第８項記載の光電変換装置。9. The photoelectric conversion device according to claim 8, further comprising a fourth insulating film between said first conductivity type semiconductor substrate and said second antireflection film. 【請求項１０】 前記第４の絶縁膜の膜厚が、前記第１
の絶縁膜の膜厚より、薄いことを特徴とする特許請求の
範囲第９項記載の光電変換装置。10. The semiconductor device according to claim 1, wherein said fourth insulating film has a thickness of said first insulating film.
10. The photoelectric conversion device according to claim 9, wherein the thickness is smaller than the thickness of the insulating film. 【請求項１１】 前記第２の反射防止膜の屈折率が、前
記第１導電型半導体基板の屈折率と、前記第１の絶縁膜
の屈折率の間の屈折率であることを特徴とする特許請求
の範囲第８〜１０項記載の光電変換装置。11. The method according to claim 1, wherein a refractive index of the second antireflection film is a refractive index between a refractive index of the first conductive semiconductor substrate and a refractive index of the first insulating film. The photoelectric conversion device according to any one of claims 8 to 10. 【請求項１２】 前記第１〜４の絶縁膜のいずれかがシ
リコン酸化膜であることを特徴とする特許請求の範囲第
１〜１１項記載の光電変換装置。12. The photoelectric conversion device according to claim 1, wherein one of the first to fourth insulating films is a silicon oxide film. 【請求項１３】 第３、第４の絶縁膜の膜厚が５０ｎｍ
以下であることを特徴とする特許請求の範囲第５、６、
９、１０、１２項記載の光電変換装置。13. The film thickness of the third and fourth insulating films is 50 nm.
Claims 5 and 6 characterized by the following:
Item 13. The photoelectric conversion device according to Item 9, 10, or 12. 【請求項１４】 前記第１、第２の反射防止膜がシリコ
ン窒化膜、タンタルオキサイド、またはＢＳＴであるこ
とを特徴とする特許請求の範囲第１〜１３項記載の光電
変換装置。14. The photoelectric conversion device according to claim 1, wherein said first and second antireflection films are silicon nitride films, tantalum oxides, or BST. 【請求項１５】 前記透明電極が、多結晶シリコンで形
成されていることを特徴とする特許請求の範囲第１〜１
４項記載の光電変換装置。15. The method according to claim 1, wherein said transparent electrode is formed of polycrystalline silicon.
5. The photoelectric conversion device according to claim 4. 【請求項１６】 前記第１導電型半導体基板上に複数の
電荷転送領域を兼ねる光電変換領域と、前記光電変換領
域を分離する複数のチャネルストップ領域とが配列さ
れ、 前記光電変換領域およびチャネルストップ領域の上方に
わたって絶縁膜を介して電荷転送電極が設けられた固体
撮像装置において、 前記光電変換領域に、特許請求の範囲第１〜１５項記載
の光電変換装置が用いられていることを特徴とする固体
撮像装置。16. A photoelectric conversion region serving also as a plurality of charge transfer regions and a plurality of channel stop regions separating the photoelectric conversion regions are arranged on the first conductivity type semiconductor substrate; In a solid-state imaging device in which a charge transfer electrode is provided over an area via an insulating film, the photoelectric conversion device according to any one of claims 1 to 15 is used for the photoelectric conversion region. Solid-state imaging device. 【請求項１７】 前記特許請求の範囲第１〜１５項記載
の光電変換装置の透明電極が、前記固体撮像装置の電荷
転送電極を兼ねることを特徴とする特許請求の範囲第１
６項記載の固体撮像装置。17. The photoelectric conversion device according to claim 1, wherein the transparent electrode also serves as a charge transfer electrode of the solid-state imaging device.
Item 7. The solid-state imaging device according to Item 6. 【請求項１８】 前記特許請求の範囲第２〜１５項記載
の光電変換装置の第２導電型領域が、前記固体撮像装置
の電荷転送部の埋め込みチャネルを構成する第２導電型
領域を兼ねることを特徴とする特許請求の範囲第１６、
１７項記載の固体撮像装置。18. The photoelectric conversion device according to claim 2, wherein the second conductivity type region also serves as a second conductivity type region constituting a buried channel of a charge transfer section of the solid-state imaging device. Claim 16 characterized by the following,
Item 18. The solid-state imaging device according to Item 17. 【請求項１９】 前記電荷転送電極のうち、前記光電変
換領域の上方に位置する部分の膜厚が、それ以外の部分
の膜厚よりも薄いことを特徴とする特許請求の範囲第１
６〜１８項記載の固体撮像装置。19. The charge transfer electrode according to claim 1, wherein a thickness of a portion of the charge transfer electrode located above the photoelectric conversion region is smaller than a thickness of the other portion.
Item 19. The solid-state imaging device according to any one of Items 6 to 18. 【請求項２０】 前記光電変換領域以外の領域に位置す
る前記電荷転送電極の上方に遮光膜が設けられているこ
とを特徴とする特許請求の範囲第１６〜１９項記載の固
体撮像装置。20. The solid-state imaging device according to claim 16, wherein a light-shielding film is provided above the charge transfer electrode located in a region other than the photoelectric conversion region. 【請求項２１】 第１導電型の半導体基板上に複数の第
２導電型の半導体領域を形成する工程と、前記第２導電
型の半導体領域を分離する領域に第１導電型の半導体領
域を形成する工程と、前記半導体基板上に第１の絶縁膜
と形成する工程と、前記第１の絶縁膜上で前記第１の半
導体領域以外の部分で前記第２の半導体領域上に第１の
電極を形成する工程と、前記第１の絶縁膜上および前記
第１の電極上に透明電極を形成する工程と、前記透明電
極上に第１の反射防止膜を形成する工程とを有すること
を特徴とする固体撮像装置の製造方法。21. A step of forming a plurality of second-conductivity-type semiconductor regions on a first-conductivity-type semiconductor substrate, and forming a first-conductivity-type semiconductor region in a region separating the second-conductivity-type semiconductor region. Forming a first insulating film on the semiconductor substrate; forming a first insulating film on the second semiconductor region at a portion other than the first semiconductor region on the first insulating film; Forming an electrode, forming a transparent electrode on the first insulating film and on the first electrode, and forming a first anti-reflection film on the transparent electrode. A method for manufacturing a solid-state imaging device. 【請求項２２】 前記第１の反射防止膜の前記第１導電
型の半導体領域上を除去し、 前記透明電極の表面に高融点金属膜を被着させる工程
と、 熱処理により前記透明電極の前記高融点金属膜と接した
部分をシリサイド化する工程と、 その後シリサイド化していない前記高融点金属を除去す
る工程と、 を有することを特徴とする特許請求の範囲第２１項記載
の固体撮像装置の製造方法。22. A step of removing the first anti-reflection film on the semiconductor region of the first conductivity type, depositing a high melting point metal film on the surface of the transparent electrode; 22. The solid-state imaging device according to claim 21, comprising: a step of silicidizing a portion in contact with the high-melting point metal film; and a step of subsequently removing the high-melting point metal that has not been silicided. Production method. 【請求項２３】 前記第１の反射膜を形成する工程の後
に、 前記透明電極の表面に高融点金属膜を被着させる工程
と、 熱処理により前記透明電極の前記高融点金属膜と接した
部分をシリサイド化する工程と、 前記光電変換領域の上方に位置する前記高融点金属膜ま
たはシリサイド膜を除去する工程と、を有することを特
徴とする特許請求の範囲第２１項記載の固体撮像装置の
製造方法。23. A step of applying a refractory metal film on the surface of the transparent electrode after the step of forming the first reflective film, and a portion of the transparent electrode in contact with the refractory metal film by heat treatment. 22. The solid-state imaging device according to claim 21, further comprising: a step of silicidation; and a step of removing the refractory metal film or the silicide film located above the photoelectric conversion region. Production method.
JP35569299A 1998-12-15 1999-12-15 Photoelectric conversion device, solid-state imaging device, and method of manufacturing the same Expired - Fee Related JP3296352B2 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010067762A (en) * 2008-09-10 2010-03-25 Mitsubishi Electric Corp Photoelectric transducer and production method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010067762A (en) * 2008-09-10 2010-03-25 Mitsubishi Electric Corp Photoelectric transducer and production method thereof

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