JP2000228539A - Manufacture of nitrogen compound semiconductor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the density defect of a nitrogen compound semiconductor by epitaxially growing an amorphous nitrogen compound semiconductor layer on a substrate, and then providing a hole in the amorphous nitrogen compound semiconductor layer between the substrate and the nitrogen compound semiconductor subjected to epitaxial growth. SOLUTION: A substrate 101 is introduced into a crystal growing apparatus, and an amorphous nitrogen compound semiconductor layer 102 is formed on the substrate 101 at a temperature lower than that at which a nitrogen compound semiconductor epitaxially grows. Then, the temperature is raised to carry out crystal growth of an epitaxial film 103 of the nitrogen compound semiconductor at the growing temperature of the nitrogen compound semiconductor. After the crystal growth is terminated, the temperature is lowered and it is taken out from the crystal growing apparatus, and a hole 104 is naturally provided in the amorphous nitrogen compound semiconductor layer 102 between the substrate 101 and the nitrogen compound semiconductor subjected to epitaxial growth.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a high quality nitride semiconductor film.

[0002]

2. Description of the Related Art Conventionally, a nitrogen compound semiconductor has been used or studied as a light emitting element or a high power device. It can be used as a light emitting element having a wide range from light to light.

Here, in order to realize a highly reliable nitrogen compound semiconductor device having excellent characteristics, it is known that it is necessary to reduce threading dislocations and cracks in the crystal.

The cracks and threading dislocations usually occur at the interface between the substrate and the growing nitrogen compound semiconductor due to the lattice mismatch between the substrate and the growing nitrogen compound semiconductor during hetero growth, and disappear. Without reaching the surface of the grown nitrogen compound semiconductor.

For this reason, various substrates have been studied to reduce cracks and threading dislocations.

For example, a thin GaN film is grown on a sapphire substrate, and the GaN film is coated thereon with a stripe-shaped SiO ₂ mask or tungsten mask, and then a GaN film is selectively grown thereon. Promote lateral growth, combine growth films with each other to form a flat film,
How to relieve distortion and defects in the mask part,
There has been proposed a method of growing a thick GaN film on a sapphire substrate, polishing and removing the sapphire substrate, and using the remaining thick film as a new substrate.

[0007]

However, for example, in the case of performing selective growth, a process of growing GaN, forming a mask for selective growth, and further forming GaN thereon by selective growth is performed. Required.

When a thick GaN film is formed and the sapphire substrate is removed, a thick film is formed over a long period of time, or a method different from the GaN film forming method used for the purpose is used. When a thick GaN film must be formed, or when the temperature is lowered from a high temperature at which the film grows to a room temperature to room temperature, the produced thick film has a difference in thermal expansion from the substrate.
It was cracked.

Further, when a thick film is used as a substrate, a step of removing the sapphire substrate may be necessary in order to reduce cracks and distortion.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned drawbacks, and an object of the present invention is to reduce the defect density of a nitrogen compound semiconductor by simplifying the steps. It is intended to provide a manufacturing method.

Another object of the present invention is to provide a method for manufacturing a light emitting device, which can manufacture a light emitting device by simplifying the steps.

[0012]

According to the first aspect of the present invention,
A method for forming a nitride compound semiconductor on a substrate, the method comprising: forming an amorphous nitride compound semiconductor layer on a substrate at a temperature lower than a temperature at which epitaxial growth of the nitride compound semiconductor is performed; Includes a step of epitaxially growing a compound semiconductor, and a step of forming a hole in an amorphous nitrogen compound semiconductor layer between the substrate and the nitrided semiconductor by epitaxial growth by lowering the temperature after growing the nitrogen compound semiconductor. Thus, the above object is achieved.

In one embodiment, the method further includes a step of removing the nitride compound semiconductor epitaxially grown from the substrate.

In one embodiment, the temperature at which the amorphous nitrogen compound semiconductor layer is formed is 600 ° C.
° C or less, and the supply ratio of the Group V raw material to the Group III raw material is 1000 or less in terms of the molar ratio of the raw materials.

In one embodiment, the growth rate of the amorphous nitrogen compound semiconductor layer serving as a buffer layer is 5 Onm / min or more, and the thickness of the buffer layer is
It is 50 nm or more.

According to a fourth aspect of the present invention, there is provided a method of forming a nitrogen compound semiconductor on a substrate, wherein a supply ratio of a group V source to a group III source is 10 or less in terms of a molar ratio of the source, and a buffer layer is formed. A nitrogen compound semiconductor to be grown, and then increase the supply ratio of group V raw material to group V raw material / II
A step of performing epitaxial growth of a nitrogen compound semiconductor at a supply ratio of the group I raw material of 20 or more, and a step of providing a hole between the substrate and the grown nitrogen compound semiconductor after cooling the nitrogen compound semiconductor, Which achieves the above object.

In one embodiment, the method further includes a step of separating the nitride compound semiconductor epitaxially grown from the substrate.

The growth rate of the buffer layer is 100 nm /
Minutes or more, and the thickness of the buffer layer is 100
nm or more.

According to a seventh aspect of the present invention, there is provided a method for manufacturing a light emitting device, wherein the light emitting device is manufactured using the nitrogen compound semiconductor obtained by the above method.

The operation of the present invention is as follows.

[0021] An amorphous buffer layer is formed between the substrate and the grown nitride compound semiconductor, and a growth step of the nitride compound semiconductor and a temperature lowering step are performed to generate vacancies in the buffer layer. Separation is caused in the buffer layer portion, the strain of the nitride compound semiconductor that has been epitaxially grown can be reduced, and the defect density can be reduced.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First, the principle of the present invention will be described.

In the present invention, the growth of a single crystal nitrogen compound semiconductor is usually carried out by a metalorganic vapor phase epitaxy (MOCVD), a hydride vapor phase epitaxy (HVPE), a molecular beam epitaxy (MBE) or the like. When performing a well-used epitaxial growth technique, an amorphous nitrogen compound semiconductor layer is first formed at a temperature lower than the temperature at which epitaxial growth is performed in the initial stage of crystal growth of a nitride semiconductor, and then the temperature is increased. Temperature, epitaxial growth of a nitrogen compound semiconductor, and then
Voids can be formed in the previously formed amorphous nitrogen compound semiconductor layer, and the strain of the nitride compound semiconductor that has been epitaxially grown can be reduced, and the defect density can be reduced.

The pores are formed when the amorphous nitrogen compound semiconductor layer formed at a low temperature undergoes epitaxial growth at a high temperature or during a temperature rising period until the epitaxial growth is performed. Formed when crystallized into microcrystals by heat.

FIG. 1A shows an example of a method for manufacturing a nitride semiconductor according to the present embodiment.

The substrate (101) is introduced into a crystal growth apparatus, and an amorphous nitrogen compound semiconductor layer (102) is formed thereon at a temperature lower than the temperature at which a nitride semiconductor is originally epitaxially grown (FIG. 1A). (B)). Thereafter, the temperature is increased, the crystal growth of the epitaxial film (103) of the nitrogen compound semiconductor is performed at the original growth temperature of the nitrogen compound semiconductor, and after completion, the temperature is lowered and taken out from the crystal growth apparatus.

As shown in FIG. 1C, the interface between the formed nitrogen compound semiconductor (103) and the substrate (101) naturally has pores.
(104) is formed, optionally a nitride semiconductor (103)
And peeling (105) of the substrate (101) may occur. Vacancy (10
4) Or, due to the separation, the internal stress in the epitaxially grown nitrogen compound semiconductor (103) is reduced, and the crystal defects (106) are reduced.

FIG. 1B is a graph showing the relative relationship between the occupancy of vacancies and the density of defects in a crystal, obtained in an experiment conducted by us.

As shown in the figure, the defect density in the crystal-grown nitrogen compound semiconductor (103) decreases as the occupancy of the vacancies existing at the substrate interface increases.

In particular, when the amorphous nitrogen compound semiconductor layer is formed, the temperature at which the amorphous nitrogen compound semiconductor layer is formed is 600 ° C. or less, and the supply molar ratio (V /
III) is 1000 or less, the formation of vacancies is easy, the reduction of the strain and the reduction of the defect density of the nitrided semiconductor that has been epitaxially grown occur effectively, and in some cases, the epitaxial growth with the sapphire substrate. The performed separation of the nitride semiconductor occurs spontaneously.

In particular, the growth rate when forming the amorphous nitrogen compound semiconductor layer is 50 nm / min or more (especially preferably 70 to 200 nm / min), and the amorphous nitrogen compound semiconductor layer is When the thickness is 50 nm or more (especially 100 to 300 nm is desirable),
It is easy to form vacancies, effectively reducing the strain of the epitaxially grown nitrogen compound semiconductor and reducing the defect density, and in some cases, the separation of the epitaxially grown nitrogen compound semiconductor from the sapphire substrate naturally occurs. Occurs. Further, in the present invention, the growth of a single crystal nitrogen compound semiconductor is performed by metalorganic vapor phase epitaxy (MOCVD), hydride vapor phase epitaxy (HVPE), molecular beam epitaxy.
When performing a commonly used epitaxial growth technique such as (MBE method), the supply amount of the group V raw material is converted into the supply amount of the group III raw material (the supply amount of the group V raw material to the group III raw material in terms of the molar ratio of the raw material). The nitrogen compound semiconductor to be a buffer layer is grown at a ratio of 10 times or less, and then the supply ratio of the group V material is increased. When the supply ratio of the group V material / group III material is 20 times or more, epitaxial growth of the nitrogen compound semiconductor is performed. Then, by lowering the temperature, voids are formed in the previously formed amorphous nitride compound semiconductor layer, thereby reducing the strain of the nitride compound semiconductor grown epitaxially and reducing the defect density. And

When the buffer layer is formed, the proportion of the group III element of the nitrogen compound semiconductor that forms the buffer layer increases due to the low supply ratio of the group V source / group III source. When the supply ratio of the group III raw material / the group III raw material is 20 times or more. When performing epitaxial growth of the nitrogen compound semiconductor, due to the influence of heat during the epitaxial growth and diffusion of a large amount of group V elements into the buffer layer, Recrystallization of the buffer layer is promoted and formed.

In particular, the growth rate when forming the nitrogen compound semiconductor serving as the buffer layer is 100 nm / min or more (especially preferably 300 to 1000 nm / min), and the growth rate of the nitrogen compound semiconductor serving as the buffer layer is high. If the film thickness is 10
When the thickness is 0 nm or more (especially, preferably 200 to 2000 nm), vacancies are easily formed, and the strain and the defect density of the nitride compound semiconductor that has been epitaxially grown are effectively reduced. Separation of the nitride compound semiconductor that has been epitaxially grown from the sapphire substrate occurs spontaneously.

[0034]

(Embodiment 1) In this embodiment, an example in which a GaN film is manufactured on a sapphire substrate having a (O001) plane by metal organic chemical vapor deposition (MOCVD) will be described.

FIG. 2 is a schematic view of the MOCVD apparatus used in the present production.

In the figure, reference numeral 201 is used in this embodiment (0
This substrate is a sapphire substrate having a (001) plane, and the substrate (201) is disposed on a susceptor (202) made of carbon.
In the susceptor (202), a heater for resistance heating, also made of carbon, is arranged, and the substrate temperature can be controlled by a thermocouple. Reference numeral 203 denotes a reaction tube made of double quartz, which is water-cooled. Ammonia (206) was used as a group V raw material, and trimethylgallium (TMG) (207) was used as a group III raw material by bubbling with nitrogen gas. Each raw material is precisely controlled in flow rate by a mass flow controller (208), introduced into a reaction tube (203) through a raw material inlet (204), and discharged from an exhaust gas outlet (205).

The production of the nitrogen compound was performed according to the following procedure.

First, the reaction tube (203) is filled with nitrogen gas,
The temperature of the susceptor (202) on which the substrate (201) is mounted is raised to 500 ° C. while supplying nitrogen gas at a flow rate of 10 liter / min. Thereafter, NH ₃ which is a Group V raw material is introduced at a flow rate of 0.3 liter / min.
G is introduced at a rate of 30 μmol / min, and amorphous GaN serving as a buffer layer is grown on the substrate (201) so as to have a thickness of 70 nm. After the growth of the amorphous GaN is completed, the temperature of the susceptor (202) is raised to 1000 ° C., and then the GaN is epitaxially grown.

The NH ₃ supply rate during epitaxial growth is 3 liters / minute, and the TMG supply rate is 30 μmol / min.
Minutes. After epitaxially growing GaN, the power of the heater in the susceptor (202) was turned off, the temperature was lowered to room temperature, the manufactured GaN was taken out from the substrate as (201), and Ga was removed.
The manufacture of the N film is completed.

When the manufactured GaN film is cleaved and its cross section is observed, a large number of vacancies are present at the interface of the substrate, and at the end face of the substrate, there are places where the manufactured GaN film is separated from the sapphire substrate. Existed. Also, a transmission electron microscope
Observation by (TEM) showed that 1 × 10 ¹⁰ defects / cm ² were present in the GaN film manufactured under the condition that no holes were formed. Only 5 × 10 ⁸ defects / cm ² were present in the formed GaN film.

(Embodiment 2) In this embodiment, when manufacturing a GaN film by the method shown in Embodiment 1, the growth conditions of an amorphous GaN film serving as a buffer layer are changed, and there are some examples of manufacturing. Describe.

First, the growth temperature of the buffer layer was set to 600 ° C.
When grown as described above, the nitrogen compound semiconductor epitaxially grown on the buffer layer had many hexagonal projections on the surface, and no voids were generated in the buffer layer portion.

Next, the manufacturing temperature of the buffer layer was set to 550 ° C.
, And the supply ratio of the group V raw material to the group III raw material was changed to produce a nitrogen compound semiconductor.

The supply amount of TMG, which is a Group III raw material, is 30 μmol /
Min and 50 μmol / min, and the supply amount of NH ₃ , which is a group V raw material, is changed from 50 to 2,000 in molar ratio compared to the supply amount of TMG so that the thickness of the buffer layer becomes 70 nm. It was manufactured and the proportion of vacancies generated was investigated. The result is shown in FIG.

As can be seen from FIG. 3, the ratio of vacancies occupying per unit area of the buffer layer increases as the supply ratio of the group V raw material and the group III raw material decreases, and V / I
II Even if the supply rate of TMG is 30 μmol / min,
Even in the case of μmol / min, a result was obtained that almost disappeared at 100000 or more.

In particular, when the supply ratio of the group V material / group III material was 200 or less, the substrate and the grown GaN film were frequently peeled off.

(Embodiment 3) In this embodiment, an example in which the growth rate of an amorphous GaN film serving as a buffer layer is examined by the method shown in Embodiment 1 will be described.

The growth temperature of the amorphous buffer layer is fixed at 550 ° C., and the supply amount of TMG is changed at 5 to 50 μmol / min so that the supply amount of NH ₃ becomes 500 in the group V material / group III material ratio. The growth rate of the amorphous buffer layer was adjusted. Under these conditions, the thickness of the buffer layer was changed with the growth time, and the result of investigating the ratio of vacancies generated is shown in FIG.

As can be seen from FIG. 4, when the growth rate of the amorphous GaN film serving as the buffer layer is 50 nm / min or more, and when the thickness of the buffer layer is 50 nm or more, the generation of voids is apparent. It can be seen that the rate of doing is increasing.

Embodiment 4 In this embodiment, without growing an amorphous nitrogen compound semiconductor at a low temperature, as shown in FIG. A description will be given of an example in which a second layer is manufactured as a buffer layer by increasing the supply ratio of a group V raw material and holes are generated in the first layer.

In this embodiment, the hydride vapor phase epitaxy (H
-VPE method).

FIG. 6 shows a schematic diagram of the H-VPE apparatus used. The substrate (501) is held by a carbon susceptor (502) and housed in a quartz reaction tube (503). NH ₃ (507), which is a source gas, is precisely adjusted in flow rate by a mass flow controller (509), introduced into a reaction tube, and reaches a substrate (501) through a dedicated pipe (504-a).
Hydrochloric acid (HCl) (508) is also a mass flow controller.
The flow rate was adjusted in (509), and the gas was diluted with N ₂ gas or H ₂ gas on the way, passed through gallium metal (506) through a dedicated pipe (504-b) (here, almost all gallium chloride (GaC
l)), and reaches the substrate (501). The entire reaction tube (503) is heated by a heater (510). On the substrate (501)
GaN is produced by the reaction between NH ₃ and GaCl.

Hereinafter, a procedure for manufacturing a GaN film will be described.

First, while introducing nitrogen from the HCl gas dilution line, the reaction tube (503) is heated to control the temperature of the Ga metal region to about 800 ° C. to 900 ° C.
Control is performed so that the temperature of (501) becomes 1000 ° C to 110 ° C. After the temperature has settled, the production of GaN is started by introducing a certain amount of NH ₃ and HCl.

In this embodiment, as growth conditions, first, 3000 cc of H ₂ , 50 cc of NH ₃ , and 2 cc of HCl were placed in the reaction tube (503).
0 cc was introduced, and GaN as the first layer was grown on the substrate (501). The growth rate of the GaN film under these conditions was 300 nm / min. After growing GaN under these conditions for 1 minute, H
₂ flow reduction of (2050Cc) and increased amount of NH ₃ performs (in 1000 cc), was carried out for 1 hour growth. The thickness of the obtained GaN film is 6
It was 0 μm. Approximately 80% of the films manufactured by this method are peeled off from the sapphire substrate during the cooling step after manufacturing, and the remaining about 20% of the manufactured films have a 60% occupancy ratio with the substrate.
Voids were formed in the above area. The ratio of defects in the GaN film was 1/10 to 1 in comparison with the case where this method was not used.
/ 100 or less.

According to the method described in the present embodiment, the injection amount of HCl was fixed at 20 cc and 30 cc when the buffer layer was manufactured, and the injection ratio of NH ₃ was changed to investigate the ratio of vacancies generated. The manufacturing conditions were such that the NH ₃ input was changed from 0 to 400 cc, and the total of the H ₂ input and the NH ₃ input was 3050 cc.
It was adjusted to become. FIG. 7 shows the occupation ratio of holes generated between the GaN film manufactured by this method and the sapphire substrate. As can be seen from the figure, the supply ratio of the supply amount of NH ₃ , which is a Group V source material, and the supply amount of HCl, which is changed to a Group III material,
In any case, when it was 10 or less, the rate of vacancy generation was high. Further, when the first layer is manufactured under the above manufacturing conditions and then the second layer is manufactured thereon, when the supply amount of HCl serving as a group V raw material is 20 or less, the film surface is extremely uneven and flat. Could not be manufactured.

(Embodiment 5) In this embodiment, the growth rate of the first layer serving as the buffer layer is
The results of examining the ratio of vacancies generated by changing the film thickness are shown.

Since the growth rate of the GaN film is substantially determined by the supply amount of the group III raw material, the growth rate was adjusted by changing the amount of HCl supplied, and the growth was performed until the thickness of the first layer became 300 nm. . At that time, the supply was performed at a constant ratio so that the supply ratio between the group V raw material and the group III raw material did not change. Further, the second layer grown thereon shows the occupancy of vacancies obtained at various growth rates, grown under constant conditions of 20 cc of HCl, 1000 cc of NH ₃ , and 2050 cc of H ₂ . FIG.

As can be seen from FIG. 8, when the growth rate of the first layer is 300 nm / min or more, the occupation ratio of the voids is clearly increased. In short, the conditions for growing the first layer to be the buffer layer were as follows: HCl input amount: 20 cc, NH ₃ input amount: 50 cc, H ₂ O
Was fixed at 3000 cc, and the film thickness of the first layer and the proportion occupied by holes were examined. FIG. 9 shows the result.

As can be seen from FIG. 9, the thickness of the first layer is 1 OOn
It can be seen that the occupation ratio of the vacancies is large when it is not less than m.

(Embodiment 6) In this embodiment, a GaN film is grown using a method of providing holes at the interface between a substrate and a growth layer of a nitride compound semiconductor, and a light emitting device is manufactured thereon. An example in which a laser diode (LD) is formed will be described.

First, a GaN film having vacancies is grown to a thickness of 20 μm by the method shown in Example 1 or Example 4, and n-type Al0.15GaO.85N and n-type Ga
N, InO.15GaO.85N and In0.05GaO.95N, five-layer quantum well (MQW), P-type GaN, p-type Al0.15Ga
0.85 N, p-type GaN is formed.

In this embodiment, the film is formed by using the MOCVD method. As the Al raw material, trimethyl aluminum (TM
A), Trimethyl indium (TMI) was used as the In raw material. Further, silane is used as an n-type doping material.
(SiH ₄ ) was used, and biscyclopentadienyl magnesium (Cp2Mg) was used as a P-type doping material.

FIG. 10 is a schematic view of an LD manufactured in this embodiment.
Shown in

In the figure, (001) is a sapphire substrate, (002) is a buffer layer, (003) is an n-type GaN film, and (O04) is an n-type A10.15Ga.
0.85N film, (005) is n-type GaN film, (006) is 1nO.15GaO.85N
-Layer quantum well (MQW) composed of InO.05GaO.95N and (O07)
Is a p-type GaN film, (008) is a p-type Al0.15Ga0.85N film, (00
9) is a p-type GaN film.

After each layer is grown, etching is performed by a reactive ion etching (RIE) method to partially
aN is exposed, an ohmic electrode (012) is formed by a vapor deposition method, a ridge for confining light is formed by RIE, and an insulator is used to selectively form an ohmic electrode (011) on the ridge portion. A window is opened by coating a certain SiO ₂ by a sputtering method or the like.

In the figure, (010) is an insulating layer made of SiO ₂ ,
(O14) is an end face etched by RIE to form n-type GaN, and (015) is an end face to form a ridge.
This is the trace of etching by RIE. Further, (O13) is a hole, and by forming the hole (013) in the buffer layer (002), the defect density in an LD element manufactured without forming a hole with the same structure is reduced to about It has been reduced by two orders of magnitude. Due to this effect, the life of the LD is increased about 10 times.

FIG. 11 shows an example of the LD manufactured in this embodiment, in which GaN (003) and the substrate (001) are separated from the hole. In this LD, the substrate was peeled off without exposing the n-type layer using RIE (FIG. 11a), the interface was polished (FIG. 11b), and then the electrode (012) was deposited (FIG. 1).
1c).

[0069]

As is apparent from the above description, according to the present invention, by providing vacancies in the amorphous nitrogen compound semiconductor layer between the substrate and the grown nitrogen compound semiconductor, the nitrogen compound The defect density of a semiconductor can be reduced. Further, the present invention relates to forming a light emitting element,
It can be suitably used.

[Brief description of the drawings]

FIG. 1A is an example of a method for manufacturing a nitrogen compound semiconductor manufactured according to the present invention.

FIG. 1B is a graph showing the relative relationship between the occupancy of vacancies and the defect density in a crystal.

FIG. 2 is a schematic diagram of a crystal growth apparatus used in Example 1.

FIG. 3 is a graph showing the occupation ratio of vacancies when the supply ratio of a group V material and a group III material is changed.

FIG. 4 is a graph showing a relationship between a growth rate and a film thickness of a buffer layer and a hole occupancy.

FIG. 5 is an example of a method for manufacturing a nitrogen compound semiconductor manufactured according to Example 4.

FIG. 6 is a schematic diagram of a crystal growth apparatus used in Example 4.

FIG. 7 is a graph showing the relationship between the amounts of HCl and NH ₃ charged and the occupancy of holes.

FIG. 8 is a graph showing the growth rate of the first layer and the occupancy rate of holes.

FIG. 9 is a graph showing the film thickness of the first layer and the occupation ratio of holes.

FIG. 10 is an example of a light emitting device manufactured according to the present invention.

FIG. 11 is an example of a light emitting device manufactured according to the present invention.

[Explanation of symbols]

 l01 Substrate 102 Amorphous nitrogen compound semiconductor layer 103 Epitaxially grown film of nitrogen compound semiconductor

Continued on front page F-term (reference) 5F041 AA40 CA05 CA34 CA40 CA46 CA49 CA57 CA65 CA74 5F045 AA04 AB14 AB17 AC08 AC12 AC13 AD09 AD10 AD14 AF09 AF13 BB12 CA10 CA12 DA53 DA55 DP03 DQ04 DQ06 DQ08 EC02 EE12 EJ04 EK27

Claims (7)

[Claims] 1. A method for forming a nitrogen compound semiconductor on a substrate, comprising: forming an amorphous nitrogen compound semiconductor layer on the substrate at a temperature lower than a temperature at which epitaxial growth of the nitrogen compound semiconductor is performed; Raising the temperature and performing a step of epitaxially growing the nitride compound semiconductor; and, after growing the nitride compound semiconductor, by lowering the temperature to form holes in the amorphous nitride compound semiconductor layer between the substrate and the nitride compound semiconductor that has been epitaxially grown. Providing a nitrogen compound semiconductor. 2. The temperature at which an amorphous nitrogen compound semiconductor layer is formed is at most 600 ° C.
Supply ratio to the group material is 1000
The method for producing a nitrogen compound semiconductor according to claim 1, wherein: 3. The method according to claim 1, wherein the growth rate of the amorphous nitrogen compound semiconductor layer serving as the buffer layer is 50 nm / min or more, and the thickness of the buffer layer is 50 nm or more. Method for producing a nitrogen compound semiconductor. 4. A method for forming a nitrogen compound semiconductor on a substrate, wherein a supply ratio of a group V material to a group III material is 10 or less in terms of a molar ratio of the material, and the nitrogen compound semiconductor serving as a buffer layer is formed. Growing step, thereafter, increasing the supply ratio of the group V raw material, performing a epitaxial growth of the nitrogen compound semiconductor when the supply ratio of the group V raw material / group III raw material is 20 or more, and lowering the temperature after growing the nitrogen compound semiconductor. Providing a hole between the substrate and the grown nitrogen compound semiconductor. 5. The method for producing a nitride semiconductor according to claim 1, further comprising a step of separating the nitride semiconductor grown epitaxially from the substrate. 6. The growth rate of said buffer layer is 100 nm.
/ Min or more, and the thickness of the buffer layer is 100
The method for producing a nitrogen compound semiconductor according to claim 4, wherein the thickness is not less than nm. 7. A method for manufacturing a light-emitting device, comprising manufacturing a light-emitting device using the nitride semiconductor obtained by the method according to claim 1.