JP2000223629A - Heat radiative structure of bare ic - Google Patents

Heat radiative structure of bare ic

Info

Publication number
JP2000223629A
JP2000223629A JP2555399A JP2555399A JP2000223629A JP 2000223629 A JP2000223629 A JP 2000223629A JP 2555399 A JP2555399 A JP 2555399A JP 2555399 A JP2555399 A JP 2555399A JP 2000223629 A JP2000223629 A JP 2000223629A
Authority
JP
Japan
Prior art keywords
bare
heat
substrate
graphite sheet
heat radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2555399A
Other languages
Japanese (ja)
Inventor
Shigeru Kondo
繁 近藤
Hiroyuki Uchiyama
博之 内山
Yoshifumi Kitayama
喜文 北山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2555399A priority Critical patent/JP2000223629A/en
Publication of JP2000223629A publication Critical patent/JP2000223629A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To raise the heat radiation effect without increasing mounting space, by arranging a graphite sheet high in heat conductivity on the passivation film of a bare chip, and letting the heat form the bare IC go to the side of a board where the bare IC is mounted. SOLUTION: A graphite sheet 7 high in heat conductivity on roughly the same level as a bump 3 is arranged on the passivation film of a bare IC2 where a bump 3 is made at each electrode, and the bump 3 of the bare IC is joined with the land 4 provided on a board 1. Then, the electric continuity between the bare IC2 and the electric circuit made on the board 1 is taken, and a sealing resin 6 is let flow in the gap between the bare IC2 and the board 1 and is thermoset to perform the protection of the electric junction and the fixation of the bare IC. The heat generated in the bare IC2 is conducted to the board 1 through the graphite sheet 7 from the rear b of the bare IC besides the heat radiation into the air from the surface a of the bare IC, thus the heat radiation utilizing the whole of the board becomes possible.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、電源系を中心とし
た高発熱ベアICの実装を必要とする電気回路基板にお
けるベアICの放熱構造に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat radiating structure of a bare IC on an electric circuit board which requires mounting of a high heat generating bare IC centering on a power supply system.

【0002】[0002]

【従来の技術】従来のベアIC接続工法によると、ベア
IC上に形成されたバンプを基板側に設けられたランド
に接合し、ベアICと基板との間隙を樹脂で封止、固定
する方法がある。
2. Description of the Related Art According to a conventional bare IC connection method, a bump formed on a bare IC is bonded to a land provided on a substrate side, and a gap between the bare IC and the substrate is sealed and fixed with a resin. There is.

【0003】図6は従来例の基板上に実装されたベアI
Cの平面図、図7は図6のD−D矢視断面図である。図
6,図7において、4箇所の電極を持つベアIC2に対
し、それぞれの電極にバンプ3を形成、基板1上に設け
られたランド4に接合することで、ベアIC2と基板1
上に形成された電気回路(配線パターン5)との導通を
取っている。この後、ベアIC2と基板との間隙に封止
樹脂6を流し込み、熱硬化させることで電気的接合部の
保護とベアICの固定を行っている。
FIG. 6 shows a conventional bare I mounted on a substrate.
C is a plan view, and FIG. 7 is a cross-sectional view taken along the line DD of FIG. 6 and 7, a bump 3 is formed on each of the bare ICs 2 having four electrodes, and the bumps 3 are bonded to the lands 4 provided on the substrate 1, so that the bare IC 2 and the substrate 1
Electrical continuity with the electric circuit (wiring pattern 5) formed thereon is established. Thereafter, the sealing resin 6 is poured into the gap between the bare IC 2 and the substrate, and is thermally cured to protect the electrical joint and fix the bare IC.

【0004】この場合、表面に露出しているのはベアI
C2の表面aのみであり、裏面b、及び4つの側面cは
封止樹脂6で覆われている。
In this case, bare I is exposed on the surface.
Only the front surface a of C2, the back surface b, and the four side surfaces c are covered with the sealing resin 6.

【0005】封止樹脂はベアICの接合部保護とベアI
Cの固定など、信頼性確保を目的に使われており、一般
に封止に使われる樹脂は熱伝導性の良い物は使われてい
ないため、ベアICでの発熱は封止樹脂層で閉じ込めら
れることになる。
[0005] The sealing resin is used to protect the joint of the bare IC and the bare I.
It is used for the purpose of securing reliability such as fixing of C. Generally, the resin used for sealing does not use a material with good thermal conductivity, so the heat generated in the bare IC is confined by the sealing resin layer Will be.

【0006】そのため、電源系など発熱量の大きいベア
ICの場合、通常の状態では放熱が効果的に行われず、
図8の断面図に示すようにベアIC2の表面a上に放熱
板9を追加したり、ベアICが実装された基板が搭載さ
れる筐体に空冷システムを設けるなど、表面に露出した
一つの面からの放熱効果を向上させる取り組みが行われ
ている。
Therefore, in the case of a bare IC which generates a large amount of heat, such as a power supply system, heat is not effectively released in a normal state.
As shown in the cross-sectional view of FIG. 8, a heat radiation plate 9 is added on the surface a of the bare IC 2 or an air cooling system is provided in a housing on which a board on which the bare IC is mounted is mounted. Efforts are being made to improve the heat dissipation effect from the surface.

【0007】[0007]

【発明が解決しようとする課題】しかしながら、上記の
対応策では、放熱板の追加で部品高さが増加し、また、
空冷システムの追加で筐体サイズが増加する。一般的に
ベアICが実装される商品には軽薄短小が求められてお
り、商品に求められている必要条件を満たすことが困難
であるという問題があった。
However, in the above countermeasures, the height of parts is increased by adding a heat sink, and
Adding an air cooling system increases the size of the housing. In general, products on which bare ICs are mounted are required to be light, thin and small, and there is a problem that it is difficult to satisfy the required conditions required for the products.

【0008】本発明は、上記従来の問題点に鑑み、高発
熱ベアICを、放熱効果を維持したまま省スペースで実
装できる放熱構造を提供することを目的としている。
SUMMARY OF THE INVENTION In view of the above-mentioned conventional problems, an object of the present invention is to provide a heat dissipation structure which can mount a high heat generation bare IC in a space-saving manner while maintaining a heat dissipation effect.

【0009】[0009]

【課題を解決するための手段】本発明は上記課題を解決
し目的を達成するためベアICのパッシベーション膜部
に熱伝導性の高いグラファイトシートを配置し、ベアI
Cからの発熱をベアICが実装された基板側に逃がすこ
とで実装スペースを増やさず放熱効果を向上させること
ができる。
According to the present invention, a graphite sheet having high thermal conductivity is arranged on a passivation film portion of a bare IC to solve the above-mentioned problems and achieve the object.
By dissipating the heat generated from C to the substrate on which the bare IC is mounted, the heat radiation effect can be improved without increasing the mounting space.

【0010】また、ベアICのパッシベーション膜部に
配置されたグラファイトシートに接するように基板側に
設けた放熱用パターンによって、ベアICからの発熱を
ベアICが実装された基板側に逃がすことで実装スペー
スを増やさず放熱効果を向上させることができる。
[0010] Further, the heat dissipation from the bare IC is released to the substrate side on which the bare IC is mounted by a heat radiation pattern provided on the substrate side so as to be in contact with the graphite sheet disposed on the passivation film portion of the bare IC. The heat radiation effect can be improved without increasing the space.

【0011】また、基板上に設けられた放熱用パターン
をベアICの外側まで引き出し、ベアICからの発熱を
ベアIC外部の基板表面に逃がすことで、実装スペース
を増やさず放熱効果を向上させることができる。
Further, the heat radiation pattern provided on the substrate is drawn out to the outside of the bare IC, and the heat generated from the bare IC is released to the surface of the substrate outside the bare IC, thereby improving the heat radiation effect without increasing the mounting space. Can be.

【0012】また、ベアICの外側まで引き出された放
熱用パターン上に配置されたグラファイトシートによっ
て、実装スペースを増やさずにベアICからの発熱を基
板上のより広い面積で放熱することができる。
In addition, the graphite sheet disposed on the heat radiation pattern drawn to the outside of the bare IC can dissipate heat generated from the bare IC over a wider area on the substrate without increasing a mounting space.

【0013】また、ベアICの接続された配線パターン
の表面に配置されたグラファイトシートによって、実装
スペースを増やさず、基板上のより広い面積で放熱効果
を向上させることができる。
In addition, the graphite sheet arranged on the surface of the wiring pattern connected to the bare IC can improve the heat radiation effect over a wider area on the substrate without increasing the mounting space.

【0014】[0014]

【発明の実施の形態】以下、本発明の各実施の形態を図
1から図5を用いて説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to FIGS.

【0015】(実施の形態1)図1は本発明の実施の形
態1におけるベアICの平面図、図2は図1のA−A矢
視断面図である。図1および図2において、7は熱伝導
性の高いグラファイートである。その他、前記図6ない
し図8と同じ部材には同じ符号を付し、その説明を省略
する。
(Embodiment 1) FIG. 1 is a plan view of a bare IC according to Embodiment 1 of the present invention, and FIG. 2 is a sectional view taken along the line AA of FIG. 1 and 2, reference numeral 7 denotes graphite having high thermal conductivity. In addition, the same members as those in FIGS. 6 to 8 are denoted by the same reference numerals, and description thereof will be omitted.

【0016】図1および図2に示すように、それぞれの
電極にバンプ3が形成されたベアIC2のパッシベーシ
ョン膜部にバンプ3と同じほぼ高さ(ベアIC実装後の
高さ)のグラファイトシート7を配置(貼付)し、この
ベアICのバンプ3を基板1上に設けられたランド4に
接合することで、ベアIC2と基板1上に形成された電
気回路(配線パターン5)との導通を取り、ベアIC2
と基板1との間隙に封止樹脂6を流し込み、熱硬化させ
ることで電気的接合部の保護とベアICの固定を行う。
こうしてベアICの放熱構造が実現される。
As shown in FIGS. 1 and 2, a graphite sheet 7 having substantially the same height as the bump 3 (the height after mounting the bare IC) is provided on the passivation film portion of the bare IC 2 having the bump 3 formed on each electrode. Are arranged (attached), and the bumps 3 of the bare IC are joined to the lands 4 provided on the substrate 1, so that conduction between the bare IC 2 and the electric circuit (wiring pattern 5) formed on the substrate 1 is established. Take, bare IC2
The sealing resin 6 is poured into the gap between the substrate and the substrate 1 and thermally cured to protect the electrical joint and fix the bare IC.
Thus, a heat dissipation structure of the bare IC is realized.

【0017】本実施の形態によって従来構造と異なる点
は図2に示すように、通常はベアIC2と基板1の間に
は封止樹脂6が充填されるが、封止樹脂6に代わってグ
ラファイトシート7が挟まっている形となる。
The difference between the present embodiment and the conventional structure is that, as shown in FIG. 2, the sealing resin 6 is normally filled between the bare IC 2 and the substrate 1, but instead of the sealing resin 6, graphite is used. The sheet 7 is sandwiched.

【0018】ベアIC2で発生した熱は、ベアIC表面
aから空気中へ放熱とあわせて、ベアIC裏面bからグ
ラファイトシート7を介して基板1に伝わり、基板全体
を活用した放熱が可能になる。熱伝導性の低い封止樹脂
に変わり、熱伝導牲の高いグラファイトシートがベアI
Cと基板の間を満たすことになり、結果的にベアICの
発熱がより基板に伝わることとなる。
The heat generated by the bare IC 2 is transmitted from the bare IC back surface b to the substrate 1 via the graphite sheet 7 together with the heat radiation from the bare IC surface a into the air, and the heat can be dissipated utilizing the entire substrate. . In place of sealing resin with low thermal conductivity, graphite sheet with high thermal conductivity is bare I
The space between C and the substrate is satisfied, and as a result, the heat generated by the bare IC is further transmitted to the substrate.

【0019】なお、本実施の形態は、ベアICと基板の
間にグラファイトシートを挟み込んだ構造にすることが
ねらいであり、あらかじめグラファイトシートが貼付さ
れた基板にベアICを実装する等、放熱構造を実現する
ための実装の手順は特に問わない。
In the present embodiment, it is intended that a structure in which a graphite sheet is sandwiched between a bare IC and a substrate is used. For example, a heat dissipation structure such as mounting a bare IC on a substrate to which a graphite sheet has been pasted is used. There is no particular limitation on the procedure of implementation for realizing.

【0020】(実施の形態2)図3は本発明の実施の形
態2におけるベアICの平面図、図4は図3のB−B矢
視断面図、図5は図3のC−C矢視断面図である。図3
ないし図5において、8は放熱用パターンであり、その
他図1、図2と同じ部材には同じ符号を付し、その説明
を省略する。
(Embodiment 2) FIG. 3 is a plan view of a bare IC according to Embodiment 2 of the present invention, FIG. 4 is a cross-sectional view taken along line BB of FIG. 3, and FIG. 5 is a line CC of FIG. FIG. FIG.
In FIG. 5 to FIG. 5, reference numeral 8 denotes a heat radiation pattern, and the same members as those in FIGS. 1 and 2 are denoted by the same reference numerals, and description thereof will be omitted.

【0021】まず、ベアIC2の実装される基板表面a
部分に、通常の配線パターン5と放熱用パターン8を設
ける。なお、この放熱用パターン8はベアIC2の外側
まで引き出されている。配線パターン5と放熱用パター
ン8はショートしないようパターンニングすることを基
本とし、ベアIC直下部分だけではなく、スペースが許
せるなら、ベアICの発熱量にあわせて広範囲にパター
ンニングするものとする。
First, the substrate surface a on which the bare IC 2 is mounted
A normal wiring pattern 5 and a heat radiation pattern 8 are provided in the portion. The heat radiation pattern 8 is drawn out of the bare IC 2. The wiring pattern 5 and the heat radiating pattern 8 are basically patterned so as not to be short-circuited. In addition to the portion directly below the bare IC, if the space allows, the patterning is performed over a wide range according to the calorific value of the bare IC.

【0022】次に、配線パターン5と放熱用パターン8
の表面にグラファイトシート7を配置(貼付)する。但
し、配線パターン上に貼付されるグラファイトシートは
ランド4部分に重ならないものとし、また、ベアIC直
下部分放熱パターンに貼付されるグラファイトシート7
の厚さはベアIC2が実装された後のバンプ3の高さに
等しいものとする。
Next, the wiring pattern 5 and the heat radiation pattern 8
The graphite sheet 7 is placed (attached) on the surface of. However, the graphite sheet stuck on the wiring pattern does not overlap with the land 4 and the graphite sheet 7 stuck on the heat radiation pattern directly under the bare IC
Is equal to the height of the bump 3 after the bare IC 2 is mounted.

【0023】次に、上記基板に対して、通常の方法にて
ベアICの実装を行う。こうしてベアICの放熱構造が
実現される。
Next, a bare IC is mounted on the substrate by a usual method. Thus, a heat dissipation structure of the bare IC is realized.

【0024】ベアICで発生した熱は、ベアIC表面a
から空気中へ放熱とあわせて、ベアIC裏面bからグラ
ファイトシート7を介して基板裏面bの放熱用パターン
8に伝わり、ベアIC直下部分以外の領域に伝わる。放
熱用パターンによって、より広範囲に、またグラファイ
トシートによってより効果的な放熱が可能になる。
The heat generated by the bare IC is transferred to the bare IC surface a.
The heat is transmitted from the bare IC back surface b through the graphite sheet 7 to the heat dissipation pattern 8 on the substrate back surface b, and is transmitted to a region other than the portion immediately below the bare IC together with the heat release from the bare IC. The heat dissipation pattern allows for more effective heat dissipation over a wider area and the graphite sheet.

【0025】また、配線パターン5の表面に貼付された
グラファイトシートによっても同様の放熱効果を得るこ
とが出来る。
The same heat radiation effect can be obtained by using a graphite sheet attached to the surface of the wiring pattern 5.

【0026】[0026]

【発明の効果】以上説明したように本発明は、ベアIC
のパッシベーション膜部に熱伝導牲の高いグラファイト
シートを配置し、ベアICからの発熱をベアICが実装
された基板側に逃がすことで実装スペースを増やさず放
熱効果を向上させることができる。
As described above, the present invention provides a bare IC
By disposing a graphite sheet having high thermal conductivity in the passivation film portion and releasing heat from the bare IC to the substrate side on which the bare IC is mounted, the heat radiation effect can be improved without increasing the mounting space.

【0027】また、ベアICのパッシベーション膜部に
配置されたグラファイトシートに接するように基板側に
設けた放熱用パターンによって、ベアICからの発熱を
ベアICが実装された基板側に逃がすことで実装スペー
スを増やさず放熱効果を向上させることができる。
[0027] Further, the heat dissipation from the bare IC is released to the board side on which the bare IC is mounted by a heat radiation pattern provided on the substrate side so as to be in contact with the graphite sheet disposed on the passivation film portion of the bare IC. The heat radiation effect can be improved without increasing the space.

【0028】また、基板上に設けられた放熱用パターン
をベアICの外側まで引き出し、ベアICからの発熱を
ベアIC外部の基板表面に逃がすことで、実装スペース
を増やさず放熱効果を向上させることができる。
Further, the heat radiation pattern provided on the substrate is drawn out to the outside of the bare IC, and the heat generated from the bare IC is released to the surface of the substrate outside the bare IC, thereby improving the heat radiation effect without increasing the mounting space. Can be.

【0029】また、ベアICの外側まで引き出された放
熱用パターン上に配置されたグラファイトシートによっ
て、実装スペースを増やさずにベアICからの発熱を基
板上のより広い面積で放熱することができる。
Further, the heat generated from the bare IC can be dissipated over a larger area on the substrate without increasing the mounting space, by the graphite sheet disposed on the heat radiation pattern drawn to the outside of the bare IC.

【0030】また、ベアICの接続された配線パターン
の表面に配置されたグラファイトシートによって、実装
スペースを増やさず、基板上のより広い面積で放熱効果
を向上させることができる。
In addition, the graphite sheet disposed on the surface of the wiring pattern connected to the bare IC can improve the heat radiation effect over a wider area on the substrate without increasing the mounting space.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の形態1におけるベアICの放熱
構造の平面図
FIG. 1 is a plan view of a heat dissipation structure of a bare IC according to a first embodiment of the present invention.

【図2】図1のA−A矢視断面図FIG. 2 is a sectional view taken along the line AA of FIG. 1;

【図3】本発明の実施の形態2におけるベアICの放熱
構造の平面図
FIG. 3 is a plan view of a heat dissipation structure of a bare IC according to a second embodiment of the present invention.

【図4】図3のB−B矢視断面図FIG. 4 is a sectional view taken along line BB of FIG. 3;

【図5】図3のC−C矢視断面図FIG. 5 is a sectional view taken along the line CC of FIG. 3;

【図6】従来例の基板上に実装されたベアICの平面図FIG. 6 is a plan view of a bare IC mounted on a conventional substrate.

【図7】図6のD−D矢視断面図であるFIG. 7 is a sectional view taken along the line DD in FIG. 6;

【図8】従来例の表面に放熱板を有する基板上に実装さ
れたベアICの断面図
FIG. 8 is a cross-sectional view of a bare IC mounted on a substrate having a heat sink on the surface of a conventional example.

【符号の説明】[Explanation of symbols]

1 基板 2 ベアIC 3 バンプ 4 ランド 5 配線パターン 6 封止樹脂 7 グラファイトシート 8 放熱用パターン 9 放熱板 Reference Signs List 1 substrate 2 bare IC 3 bump 4 land 5 wiring pattern 6 sealing resin 7 graphite sheet 8 heat radiation pattern 9 heat radiation plate

───────────────────────────────────────────────────── フロントページの続き (72)発明者 北山 喜文 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Fターム(参考) 5F036 AA01 BB21 BD11  ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Yoshifumi Kitayama 1006 Kadoma, Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. F term (reference) 5F036 AA01 BB21 BD11

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 ベアICからの発熱をベアICが実装さ
れた基板側に逃がして放熱効果を向上させるためベアI
Cのパッシベーション膜部に熱伝導性の高いグラファイ
トシートを配置したことを特徴とするベアICの放熱構
造。
1. A bare IC for dissipating heat from the bare IC to a substrate side on which the bare IC is mounted to improve a heat radiation effect.
A heat dissipating structure for bare ICs, wherein a graphite sheet having high thermal conductivity is arranged on the passivation film portion of C.
【請求項2】 ベアICからの発熱をベアICが実装さ
れた基板側に逃がして放熱効果を向上させるためベアI
Cのパッシベーション膜部に配置されたグラファイトシ
ートに接するように基板側に放熱用パターンを設けたこ
とを特徴とするベアICの放熱構造。
2. A bare IC for dissipating heat generated from the bare IC to the board side on which the bare IC is mounted to improve a heat radiation effect.
A heat radiating structure for a bare IC, wherein a heat radiating pattern is provided on the substrate side so as to be in contact with the graphite sheet disposed on the passivation film portion of C.
【請求項3】 ベアICからの発熱をベアIC外部の基
板表面に逃がして放熱効果を向上させるため基板上に設
けられた放熱用パターンをベアICの外側まで引き出し
たことを特徴とするベアICの放熱構造。
3. A bare IC wherein a heat radiation pattern provided on the substrate is drawn out to the outside of the bare IC in order to release heat generated from the bare IC to a surface of the substrate outside the bare IC to improve a heat radiation effect. Heat dissipation structure.
【請求項4】 ベアICからの発熱を基板上のより広い
面積で放熱するためベアICの外側まで引き出された放
熱用パターン上にグラファイトシートを配置したことを
特徴とするべアICの放熱構造。
4. A heat dissipating structure for a bare IC, wherein a graphite sheet is arranged on a heat dissipating pattern drawn to the outside of the bare IC in order to dissipate heat generated from the bare IC over a wider area on the substrate. .
【請求項5】 基板上のより広い面積で放熱効果を向上
させためベアICの接続された配線パターンの表面にグ
ラファイトシートを配置したことを特徴とするベアIC
の放熱構造。
5. A bare IC wherein a graphite sheet is arranged on a surface of a wiring pattern connected to the bare IC in order to improve a heat radiation effect over a wider area on the substrate.
Heat dissipation structure.
JP2555399A 1999-02-02 1999-02-02 Heat radiative structure of bare ic Pending JP2000223629A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2555399A JP2000223629A (en) 1999-02-02 1999-02-02 Heat radiative structure of bare ic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2555399A JP2000223629A (en) 1999-02-02 1999-02-02 Heat radiative structure of bare ic

Publications (1)

Publication Number Publication Date
JP2000223629A true JP2000223629A (en) 2000-08-11

Family

ID=12169158

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10201781A1 (en) * 2002-01-17 2003-08-07 Infineon Technologies Ag High-frequency power component and high-frequency power module and method for producing the same
WO2004044982A1 (en) * 2002-11-12 2004-05-27 Fujitsu Limited Packaging structure
JP2007011265A (en) * 2005-06-29 2007-01-18 Lg Phillips Lcd Co Ltd Liquid crystal display device
KR20160065676A (en) * 2014-12-01 2016-06-09 삼성전자주식회사 Semiconductor package having heat-dissipation member

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10201781A1 (en) * 2002-01-17 2003-08-07 Infineon Technologies Ag High-frequency power component and high-frequency power module and method for producing the same
US6867492B2 (en) 2002-01-17 2005-03-15 Infineon Technologies Ag Radio-frequency power component, radio-frequency power module, method for producing a radio-frequency power component, and method for producing a radio-frequency power module
DE10201781B4 (en) * 2002-01-17 2007-06-06 Infineon Technologies Ag High frequency power device and high frequency power module and method of making the same
WO2004044982A1 (en) * 2002-11-12 2004-05-27 Fujitsu Limited Packaging structure
US7285429B2 (en) 2002-11-12 2007-10-23 Fujitsu Limited Mounting device for high frequency microwave devices
JP2007011265A (en) * 2005-06-29 2007-01-18 Lg Phillips Lcd Co Ltd Liquid crystal display device
JP4597858B2 (en) * 2005-06-29 2010-12-15 エルジー ディスプレイ カンパニー リミテッド Liquid crystal display
KR101138261B1 (en) * 2005-06-29 2012-04-24 엘지디스플레이 주식회사 liquid crystal display device
US8514362B2 (en) 2005-06-29 2013-08-20 Lg Display Co. Ltd. Liquid crystal display device including protection pad
KR20160065676A (en) * 2014-12-01 2016-06-09 삼성전자주식회사 Semiconductor package having heat-dissipation member
KR102335771B1 (en) 2014-12-01 2021-12-06 삼성전자주식회사 Semiconductor package having heat-dissipation member

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