JP2000215413A5 - - Google Patents

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Publication number
JP2000215413A5
JP2000215413A5 JP1999015248A JP1524899A JP2000215413A5 JP 2000215413 A5 JP2000215413 A5 JP 2000215413A5 JP 1999015248 A JP1999015248 A JP 1999015248A JP 1524899 A JP1524899 A JP 1524899A JP 2000215413 A5 JP2000215413 A5 JP 2000215413A5
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JP
Japan
Prior art keywords
antiferromagnetic film
manufacturing
magnetic
magnetic sensor
exchange
Prior art date
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Application number
JP1999015248A
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English (en)
Japanese (ja)
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JP2000215413A (ja
JP4033572B2 (ja
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Priority to JP01524899A priority Critical patent/JP4033572B2/ja
Priority claimed from JP01524899A external-priority patent/JP4033572B2/ja
Publication of JP2000215413A publication Critical patent/JP2000215413A/ja
Publication of JP2000215413A5 publication Critical patent/JP2000215413A5/ja
Application granted granted Critical
Publication of JP4033572B2 publication Critical patent/JP4033572B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP01524899A 1999-01-25 1999-01-25 磁気センサ及びその製造方法 Expired - Fee Related JP4033572B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP01524899A JP4033572B2 (ja) 1999-01-25 1999-01-25 磁気センサ及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP01524899A JP4033572B2 (ja) 1999-01-25 1999-01-25 磁気センサ及びその製造方法

Publications (3)

Publication Number Publication Date
JP2000215413A JP2000215413A (ja) 2000-08-04
JP2000215413A5 true JP2000215413A5 (cs) 2006-02-09
JP4033572B2 JP4033572B2 (ja) 2008-01-16

Family

ID=11883564

Family Applications (1)

Application Number Title Priority Date Filing Date
JP01524899A Expired - Fee Related JP4033572B2 (ja) 1999-01-25 1999-01-25 磁気センサ及びその製造方法

Country Status (1)

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JP (1) JP4033572B2 (cs)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006139828A (ja) 2004-11-10 2006-06-01 Hitachi Global Storage Technologies Netherlands Bv 磁気ヘッド
US7635974B2 (en) * 2007-05-02 2009-12-22 Magic Technologies, Inc. Magnetic tunnel junction (MTJ) based magnetic field angle sensor
JP7302612B2 (ja) 2021-01-18 2023-07-04 Tdk株式会社 磁気センサ
JP7298630B2 (ja) 2021-01-25 2023-06-27 Tdk株式会社 磁気センサ
DE102023108388A1 (de) * 2023-03-31 2024-10-02 Johannes Gutenberg-Universität Mainz, Körperschaft des öffentlichen Rechts Spannungsbeeinflussungseinrichtung zum Erzeugen einer lokalen Veränderung einer inneren mechanischen Spannung

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