JP2000212390A - Epoxy resin composition for sealing semiconductor and semiconductor device produced by using the composition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain an epoxy resin composition for semiconductor sealing use, having excellent fluidity and high reliability and suitable for the sealing of semiconductor device by compounding an epoxy resin with a specific phenolic resin and an inorganic filler having a specific particle size distribution. SOLUTION: The objective epoxy resin composition for semiconductor sealing use is produced by compounding an epoxy resin with a phenolic resin expressed by formula (R1 is H or a 1-10C alkyl; R2 and R3 are each H, a 1-10C alkyl or a halogen; (n) is an integer of >=0) and containing a resin of n=1 in an amount of >=50 wt.% at a compounding ratio of 0.5-2.0 hydroxyl equivalent of the phenolic resin based on 1 equivalent of the epoxy group of the epoxy resin and mixing the obtained composition with >=75 wt.%, preferably 80-91 wt.% (based on the total composition) of an inorganic filler such as fused spherical silica powder consisting of a mixture of 50-92 wt.% of a fraction (x) having an average particle diameter of 20-60 μm, 5-40 wt.% of a fraction (y) selected from the fraction (x) and satisfying the formula 0.1α<=y<=0.2α wherein α is average particle diameter and 3-15 wt.% of a fraction (z) satisfying the formula 0.01α<=z<=0.1α.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for semiconductor encapsulation capable of obtaining a semiconductor device having excellent fluidity and high reliability, and a semiconductor device using the same.

[0002]

2. Description of the Related Art Semiconductor devices such as transistors, ICs and LSIs are usually resin-sealed by transfer molding using an epoxy resin composition. Various types of packages have been developed as this type of package.

As the epoxy resin composition used for the above resin encapsulation, an epoxy resin composition mainly containing an epoxy resin and containing a phenol resin as a curing agent component and an inorganic filler is usually used. . Conventionally, as the phenol resin as the above-mentioned curing agent component, 4
A phenol resin containing a large amount of components higher than the core is used.

[0004]

Among the above-mentioned components, for example, the content of the inorganic filler tends to be higher, but the flowability during molding can be improved while increasing the content of the inorganic filler. It is necessary to use a resin component having a lower viscosity in order to ensure the above. Among these resin components, focusing on the phenolic resin, for example, in order to reduce the viscosity of a commonly used phenolic resin component, together with a conventional phenolic resin having four or more nuclei, a lower-viscosity phenolic resin having a lower viscosity is used. In addition, good fluidity has been ensured in the tendency to increase the amount of the inorganic filler. However, the epoxy resin composition using such a phenolic resin has a problem that the softening point is lowered and the handling property is poor due to the occurrence of blocking and the reliability of the obtained semiconductor device such as solder resistance is poor. Was.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and provides an epoxy resin composition for semiconductor encapsulation having good fluidity and excellent reliability such as solder resistance and the like. It is an object to provide a semiconductor device.

[0006]

In order to achieve the above object, the present invention provides, as a first gist, an epoxy resin composition for semiconductor encapsulation containing the following components (A) to (C). (A) Epoxy resin. (B) A phenol resin having a repeating number n = 1 in the following general formula (1) is represented by the general formula (1) occupying 50% by weight or more of the whole phenol resin represented by the general formula (1). Phenolic resin.

[0007]

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(C) The following average particle sizes (x), (y),
A mixture of three kinds of inorganic fillers having the above (z), wherein the inorganic filler having the above average particle diameter (x) is 50 to 92% by weight of the whole mixture, and the inorganic filler having the above average particle diameter (y) is 5 to 40% by weight of the entire mixture, and 3 to 1% by weight of the inorganic filler having the above average particle size (z).
It is set to 5% by weight. (X) Average particle size of 20 to 60 μm. (Y) When α is the average particle size of the inorganic filler selected and used from those having an average particle size of 20 to 60 μm which is the above (x), 0.1α ≦ average particle size (μm) ≦ 0.2α. Average particle size expressed. (Z) When α is the average particle size of the inorganic filler selected and used from those having an average particle size of 20 to 60 μm as described in (x) above, 0.01α ≦ average particle size (μm) <0.1α. Average particle size expressed.

Further, a semiconductor device in which a semiconductor element is encapsulated using the above epoxy resin composition for encapsulating a semiconductor is a second semiconductor device.
The summary of the

That is, the present inventors have conducted a series of studies in order to obtain an epoxy resin composition for semiconductor encapsulation which has excellent flowability and excellent reliability. As a result, among the phenol resins represented by the general formula (1), the trinuclear phenol resin having a repetition number n of 1 accounts for 50% by weight of the entire phenol resin represented by the above formula (1). When using a phenolic resin set to account for the above and using an inorganic filler having the specific particle size distribution in combination, sealing with excellent reliability such as solder resistance as well as good fluidity due to low viscosity is achieved. The inventors have found that a material can be obtained, and arrived at the present invention.

In addition to the specific phenolic resin (component B), the phenolic resin is selected from the group consisting of the phenolic resins represented by the general formulas (2), (3), (4) and (5). In addition, when the phenol resin contains at least one phenol resin and the proportion of the phenol resin having the repeating number n = 1 in the general formula (1) is a specific proportion in the entire phenol resin component, it may be caused by blocking or the like. Good reliability and fluidity can be obtained without poor handling.

Further, when butadiene rubber particles are used together with the above components, even better low stress properties can be obtained.

Further, together with the above components, a silicone compound having at least two functional groups, for example, a silicone compound represented by the general formula (6) or a silicone compound represented by the general formula (8) is used. When used, excellent low stress properties and adhesiveness can be obtained.

When 80% by weight or more of the whole inorganic filler as the component C is a fused silica powder having a roundness of 0.8 or more, good fluidity and reduction of filler damage to semiconductor elements can be achieved. Can be

[0015]

Next, an embodiment of the present invention will be described in detail.

The epoxy resin composition for semiconductor encapsulation of the present invention comprises an epoxy resin (component A), a specific phenol resin (component B), and an inorganic filler (component C) having a specific particle size distribution. It is obtained in the form of a powder or a tablet obtained by compressing the powder.

Epoxy resin (A component) used in the present invention
Is not particularly limited, and a commonly used epoxy resin is used. For example, various epoxy resins such as cresol novolak type, phenol novolak type, bisphenol A type, biphenyl type, triphenylmethane type and naphthalene type, and brominated epoxy resins can be mentioned. These can be used alone or in combination of two or more.

The specific phenol resin (component B) used together with the epoxy resin (component A) is a phenol resin having a repeating number n = 1 in the following general formula (1) represented by the general formula (1). 5 of the entire phenolic resin
A phenol resin represented by the general formula (1) occupying 0% by weight or more.

[0019]

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In the above formula (1), the number of repetitions n is 0
Is an integer greater than or equal to. In the present invention, the repetition number n = 1 of the phenol resin represented by the above formula (1)
Must account for 50% by weight or more of the entire phenolic resin represented by the formula (1). It is particularly preferably at least 60% by weight. That is, the trinuclear phenol resin in which n = 1 is represented by 50 in the entire formula (1).
If the amount is less than% by weight, good fluidity cannot be obtained.

The present invention is characterized in that the above-mentioned specific phenol resin is used, but other conventionally known phenol resins may be used in combination with the above-mentioned specific phenol resin. As described above, when a conventionally known phenol resin is used in combination, the proportion of the conventionally known phenol resin is preferably set to 70% by weight or less based on the whole phenol resin component. Particularly preferably, the content is 10 to 60% by weight.

Examples of the phenol resin used in combination with the specific phenol resin (component B) include phenol resins represented by the following general formulas (2), (3), (4) and (5). Can be By using these phenolic resins together, more reliable characteristics can be obtained. The phenolic resins represented by the above formulas (2) to (5) can be used alone or in combination of two or more.

[0023]

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[0024]

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[0025]

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[0026]

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In the above equation (2), the number of repetitions m is 0
Is an integer greater than or equal to. In the above equation (3), the numbers of repetitions p and q are each an integer of 1 or more. In addition,
In the phenolic resin represented by the above (3), the repeating units p and q may be in any of block, random, and alternating modes. Next, in the above equation (4),
The repetition number r is an integer of 0 or more. Further, the number of repetitions s in the phenol resin represented by the above formula (5)
Is an integer of 0 or more.

When the phenolic resins represented by the above formulas (2) to (5) are used alone or in combination of two or more, the proportion of the phenolic resin in the general formula (1) where the number of repetitions n = 1 is occupied. Is preferably at least 20% by weight of the whole phenolic resin component.

The mixing ratio of the epoxy resin (component A) and the phenol resin component containing the specific phenol resin (component B) is such that the hydroxyl group equivalent in the phenol resin component is 0.5 per equivalent of epoxy group in the epoxy resin. It is preferable to mix them so as to be 2.0 equivalents. It is more preferably 0.8 to 1.2 equivalents.

As the inorganic filler (component C) used together with the above-mentioned components A and B, various known inorganic fillers are used. For example, quartz glass powder, silica powder, alumina, talc and the like can be mentioned. Particularly preferred is a fused spherical silica powder.

The above-mentioned inorganic filler (component C)
It is a mixture of three kinds of inorganic fillers having the following average particle sizes (x) to (z). The average particle diameter was measured by a laser scattering particle size distribution analyzer. (X) Average particle size of 20 to 60 μm. (Y) When α is the average particle size of the inorganic filler selected and used from those having an average particle size of 20 to 60 μm which is the above (x), 0.1α ≦ average particle size (μm) ≦ 0.2α. Average particle size expressed. (Z) When α is the average particle size of the inorganic filler selected and used from those having an average particle size of 20 to 60 μm as described in (x) above, 0.01α ≦ average particle size (μm) <0.1α. Average particle size expressed.

That is, these three types of average particle diameters:
It is necessary to mix the inorganic filler (x) having a large average particle diameter, the inorganic filler (y) having a medium particle diameter, and the inorganic filler (z) having a small particle diameter in the following proportions. is there. By mixing so as to have such a ratio, good fluidity is obtained, molding reliability such as gold wire flow and die pad shift is high, and good results are also obtained in molding workability such as generation of burrs.

The inorganic filler having an average particle size of 20 to 60 μm (x) accounts for 50 to 92% by weight of the whole mixture. An inorganic filler having an average particle size (y) represented by 0.1α ≦ average particle size (μm) ≦ 0.2α is 5 to 40% by weight of the whole mixture. The inorganic filler having an average particle diameter (z) represented by 0.01α ≦ average particle diameter (μm) <0.1α is 3 to 15% of the whole mixture.
weight%. [However, α is the average particle size of 20 to 60 in the above (x).
It is the average particle size of the inorganic filler selected and used from those of μm. ]

As the inorganic filler (component C) having the above-mentioned particle size distribution, fused silica powder is particularly preferably used, and more than 60% by weight of the whole fused silica powder having this particle size distribution has a roundness of 0. .7 or more. Particularly preferably, 80% by weight or more of the entirety has a roundness of 0.8 or more. That is, due to the high roundness of the specific ratio or more of the entire fused silica powder, the fluidity is further improved, and as described above,
This is because high molding reliability can be obtained.

The roundness is calculated as follows. That is, as shown in FIG. 1A, when the actual area of a projected image 1 of an object whose roundness is to be measured is α and the length of the periphery of the projected image 1 is PM, As shown in FIG. 1 (b), it is assumed that a projection image 2 is a perfect circle having the same circumference as the projection image 1 described above. Then, the area α ′ of the projection image 2 is calculated. As a result, the ratio of the actual area α of the projection image 1 to the area α ′ of the projection image 2 (α /
α ′) indicates the roundness, and this value (α / α ′) is calculated by the following equation (A). Therefore, the roundness is 1.
As is clear from this definition, 0 can be said to be a perfect circle. Then, the more irregularities are on the outer periphery of the object, the smaller the roundness becomes sequentially smaller than 1.0. In the present invention, the roundness of the inorganic filler is a value obtained by extracting a part of the inorganic filler to be measured and measuring by the above method, and is usually an average roundness. Say.

[0036]

(Equation 1)

The amount of the inorganic filler (component C) having such a particle size distribution is 75% of the total amount of the epoxy resin composition.
% Or more, more preferably 80% by weight or more.
９１91% by weight. That is, if the amount is too small, such as less than 75% by weight, there is a tendency that the soldering resistance characteristics and the characteristics at the warpage level in a single-sided mold type semiconductor device tend to be inferior.

In the present invention, butadiene rubber particles can be used in addition to the above components A to C for the purpose of improving the stress reduction. As the above-mentioned butadiene rubber particles, those obtained by a copolymerization reaction of alkyl methacrylate, alkyl acrylate, butadiene, styrene and the like are usually used. Specific examples include a methyl methacrylate-butadiene-styrene copolymer and a methyl methacrylate-ethyl acrylate-butadiene-styrene copolymer. Among the above copolymers, a methyl methacrylate-butadiene-styrene copolymer having a butadiene composition ratio of 70% by weight or less and a methyl methacrylate composition ratio of 15% by weight or more is suitably used. And
As the above-mentioned butadiene rubber particles, those having an average particle diameter of 0.05 to 40 μm are preferably used, and particularly preferably 0.05 to 10 μm.

The amount of the butadiene-based rubber particles is preferably set at 0.1 to 4.0% by weight, more preferably 0.1 to 2% by weight, based on the entire epoxy resin composition. That is, if the amount is less than 0.1% by weight, a sufficient effect of lowering the stress of the epoxy resin composition cannot be obtained, and if the amount exceeds 4.0% by weight, a decrease in fluidity is observed.

Further, in addition to the above components, a silicone compound may be used. As described above, by using the above-mentioned silicone compound, excellent low stress property and adhesiveness can be obtained. As the above-mentioned silicone compound, those having at least two functional groups are preferable, and examples thereof include a silicone compound represented by the following general formula (6) and a silicone compound represented by the following general formula (8). Can be These are used alone or in combination.

[0041]

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[0042]

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As the silicone compound represented by the general formula (6), those having a weight average molecular weight in the range of 5,000 to 50,000 are used. The repeating unit of p, m, and n may be any of block, random, and alternate modes.

In the above formula (6), R is a monovalent hydrocarbon group such as a methyl group, an ethyl group, a propyl group,
Butyl, vinyl, phenyl and benzyl groups,
Each may be different or the same. D is a monovalent organic group containing an epoxy group, and is represented by, for example, the following general formula (D1) or (D2).

[0045]

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[0046]

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The above general formula (D1) and general formula (D2)
Wherein R ₃ and R ₄ are divalent organic residues,
These include a methylene group, an ethylene group, a phenylene _{group, -CH 2 CH 2 CH 2 -} , - CH 2 OCH
₂ CH ₂ CH ₂ —, —CH ₂ CH ₂ OCH ₂ CH ₂ —,
—CH ₂ OCH ₂ CH ₂ OCH ₂ CH ₂ —, and the like.

In the above formula (6), G is represented by the above general formula (7). In the formula (7), R ₁ is a divalent organic residue and has 1 to 5 carbon atoms.
And the like. R ₂ is —H or a monovalent organic group, and examples thereof include an alkyl group, a cycloalkyl group, an aryl group, an acyl group, an aralkyl group, and an albamil group. A is 0 or 1; b and c are integers of 0 to 50, preferably 10 to 10;
It is an integer of 50. Here, b and c are b + c = 1
It satisfies the condition of ~ 100.

The silicone compound represented by the formula (6) can be prepared by adding allyl glycidyl ether and polyoxyalkylene allyl ether to an organohydrogenpolysiloxane in the presence of a platinum catalyst in an organic solvent such as water or toluene. It can be produced by an addition reaction.

X in the above formula (8) is a monovalent organic group having an amino group, and is more preferably an alkyl group having 1 to 8 carbon atoms having an amino group. Also, R
Is, for example, a methyl group, an ethyl group or the like. When the silicone compound represented by the general formula (8) is used, usually, a terminal aminopropyl group-modified dimethylsiloxane having a repeating number n of an integer of 0 to 40 is used. Preferably, those having a repetition number n of 0 to 20 are used. Particularly preferred is a dimethylsiloxane modified with aminopropyl groups at both terminals represented by the following structural formula (8a).

[0051]

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The amount of the silicone compound is preferably set at 0.05 to 10% by weight, more preferably 0.1 to 5% by weight, based on the whole epoxy resin composition.
It is. That is, if the amount of the silicone compound is too small, such as less than 0.05% by weight, the effect of improving the low stress and adhesiveness of the semiconductor device is not sufficiently obtained, and if the amount exceeds 10% by weight, the amount is too large. This is because the moldability of the epoxy resin composition tends to decrease.

The epoxy resin composition used in the present invention contains, if necessary, a curing accelerator in addition to the above-mentioned components A to C, butadiene rubber particles, and a silicone compound.
Other additives such as halogen-based flame retardants such as novolac brominated epoxy resins, flame retardant aids such as antimony trioxide, pigments such as carbon black, and silane coupling agents such as γ-glycidoxypropyltrimethoxysilane. Is appropriately used.

Examples of the curing accelerator include amine type and phosphorus type. Examples of the amine type include imidazoles such as 2-methylimidazole, and tertiary amines such as triethanolamine and diazabicycloundecene. Examples of the phosphorus type include triphenylphosphine and the like. These are used alone or in combination. And, the compounding ratio of this curing accelerator is preferably set to a ratio of 0.1 to 1.0% by weight of the whole epoxy resin composition. Further, considering the fluidity of the epoxy resin composition, it is preferably 0.15 to 0.35% by weight.

The epoxy resin composition for semiconductor encapsulation of the present invention can be produced, for example, as follows. That is, after the above components A to C and, if necessary, butadiene-based rubber particles and a silicone compound, and other additives, are blended and mixed, the mixture is melted and mixed in a kneading machine such as a mixing roll machine in a heated state. And then pulverized by a known means and, if necessary, tableted.

The encapsulation of a semiconductor element using such an epoxy resin composition is not particularly limited, and can be performed by a known molding method such as ordinary transfer molding.

Next, examples will be described together with comparative examples.

Each component shown below was prepared.

[Epoxy resin a] Biphenyl type epoxy resin (epoxy equivalent 192, melting point 107 ° C.)

[Epoxy resin b] o-cresol novolak type epoxy resin (epoxy equivalent 195, softening point 80
℃)

[Epoxy resin c] Novolak type brominated epoxy resin (epoxy equivalent: 275, softening point: 84 ° C.)

[Phenol Resin a] In the formula (1), R ₁ is a phenol novolak resin in which R ₁ is a methyl group and R ₂ and R ₃ are hydrogen atoms. Phenol resin in weight% (hydroxyl equivalent 106, softening point 62 ° C)

[Phenol resin b] In the above formula (1), R ₁ , R ₂ and R ₃ are phenol novolak resins in which hydrogen atoms are present, and the content of the phenol resin component with n = 1 is 15% by weight. A certain phenolic resin (hydroxyl equivalent 106, softening point 83 ° C)

[Phenol resin c] A phenol resin represented by the above formula (4) (having a hydroxyl equivalent of 167 and a softening point of 8
9 ℃)

[Phenol resin d] A phenol resin represented by the above general formula (3) (hydroxyl equivalent 157, softening point 7
6 ℃)

[Phenol resin e] A phenol resin represented by the general formula (2) (having a hydroxyl equivalent of 170 and a softening point of 8
3 ℃)

[Phenol resin f] A phenol resin represented by the general formula (5) (having a hydroxyl equivalent of 100 and a softening point of 1)
03 ° C)

[Inorganic fillers ad] Various silica powders shown in Table 1 below were prepared.

[0069]

[Table 1]

[Silicone compound a] A silicone compound represented by the following formula (x)

[0071]

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[Silicone compound b] A silicone compound represented by the following formula (y)

[0073]

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[Butadiene rubber particles] Average particle size 0.2
μm methyl methacrylate-butadiene-styrene copolymer rubber particles

[Coupling agent] β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane

[Curing accelerator] Triphenylphosphine

[0077]

Examples 1 to 11 and Comparative Examples 1 to 3 Each of the raw materials shown in Tables 2 to 4 below was blended in the proportions shown in the same table, and 80 to 120
The mixture was melted and kneaded in a roll kneader (5 minutes) heated to ℃. Next, the melt was cooled, pulverized, and further tableted to obtain an epoxy resin composition for semiconductor encapsulation.

[0078]

[Table 2]

[0079]

[Table 3]

[0080]

[Table 4]

Using the epoxy resin compositions of Examples and Comparative Examples thus obtained, the spiral flow value, gel time and flow tester viscosity, and the moldability and solder resistance were measured and evaluated according to the following methods. . The results are shown in Tables 5 to 7 below.

[Spiral flow value] EMMI 1-6 at 175 ± 5 ° C using a spiral flow measurement mold.
6 was measured.

[Gel Time] A sample (200 to 500 mg) was placed on a hot plate at a specified temperature (175 ° C.) and stretched thinly on a hot plate with stirring. The time was read as the gel time.

[Flow tester viscosity] 2 g of each of the above epoxy resin compositions was precisely weighed and molded into a tablet. Then, put this in the pot of the Koka type flow tester,
The measurement was performed with a load of 0 kg. The melt viscosity of the sample was determined from the moving speed of the piston when the molten epoxy resin composition was extruded through a die hole (diameter 1.0 mm × 10 mm).

[Moldability] Gold wire flow Using the epoxy resin compositions obtained in the above Examples and Comparative Examples, transfer molding of semiconductor elements was performed (conditions: 17).
(5 ° C. × 90 seconds) and post-curing at 175 ° C. × 5 hours to obtain a semiconductor device. This semiconductor device is an LQFP
(Size: 20 × 20 × 1.4 mm thick), copper lead frame, die pad size is 8 × 8 mm,
The chip size is 7.5 × 7.5 mm.

That is, at the time of manufacturing the above-mentioned semiconductor device, as shown in FIG. 2, a gold wire 14 is attached to the LQFP package frame having the die pad 10 of 8 mm square used above, and the epoxy resin composition is A package was produced by resin sealing with a material. In FIG. 2, 15 is a semiconductor chip, and 16 is a lead pin.
Then, using the soft X-ray analyzer, the produced package was measured for the amount of flowing gold wire. The measurement was performed by selecting 10 gold wires from each package and measuring them, as shown in FIG.
The flow amount of the gold wire 14 from the front direction was measured.
The value of the maximum amount of the flow of the gold wire 14 was defined as the value of the flow of the gold wire (dmm) of the package, and the flow rate of the gold wire [(d / L) × 100] was calculated. Note that L
Indicates the distance (mm) between the gold wires 14. Five packages were measured for each epoxy resin composition, and the average value was defined as the amount of gold wire flow.

Die Shift A semiconductor device was manufactured under the same conditions as the flow of the gold wire.
That is, an LQFP package 11 having an 8 mm square die pad 10 having a semiconductor chip 15 mounted thereon and having the shape shown in FIG. 4 is formed, and this package 11 is cut (indicated by a dashed line). The surface was observed, and the amount of deformation of the die pad was measured based on the difference from the design value of the die pad. That is, as shown in FIG. 5A, the thickness (thickness a μm) of the resin layer under the four corners of the die pad 10 was measured for the package in which the die pad shift occurred. On the other hand, as shown in FIG. 5B, in a package in a normal state where no die pad shift occurs,
The thickness (thickness bμ) of the resin layer below the four corners of the die pad 10
m) was measured. Such a measurement is performed at all four corners of the die pad 10, and the difference between these measured values and the normal product (a-
b) was obtained as an absolute value, and this was shown as an average value.

Length of Air Vent Burr In the manufacture of the semiconductor device, each mold having a slit having a groove depth of 25 μm at each corner of the obtained package is used, and the package is manufactured under the same conditions as above. Was molded. At this time, the flow length of the epoxy resin composition flowing into the groove was measured and defined as the air vent length (the length of the air vent burr).

[Solder Resistance] Using the above semiconductor device, after absorbing moisture under the following conditions (a) and (b), an evaluation test (solder resistance) of infrared reflow (condition: 240 ° C. × 10 seconds) Was done. Then, the number of cracks (20
Was measured. (A) 85 ° C./60% RH × 168 hours (b) 85 ° C./85% RH × 168 hours

[0090]

[Table 5]

[0091]

[Table 6]

[0092]

[Table 7]

From Tables 5 to 7, it can be seen that the products of Examples have good fluidity from the values of spiral flow, gel time and flow tester viscosity. In addition, excellent evaluation results were obtained in the moldability evaluation test and the soldering resistance test, and it can be seen that a highly reliable semiconductor device was obtained.

On the other hand, in the comparative example, the flow tester viscosity was high, and in the moldability evaluation test and the soldering resistance test, the test results were inferior to those of the example, and a semiconductor device having poor reliability was obtained. You can see that

[0095]

As described above, the present invention uses a specific phenolic resin (component B) as a curing agent component and contains an inorganic filler (component C) having the specific particle size distribution as described above. It is an epoxy resin composition for semiconductor encapsulation. For this reason, even if the above-mentioned inorganic filler is highly filled, while having good fluidity, and using this as a sealing material, it is possible to obtain a semiconductor device having excellent reliability such as solder resistance. Can be.

In addition to the phenolic resin (component B), at least one selected from the group consisting of the phenolic resins represented by the general formulas (2), (3), (4) and (5) is used. When it contains one phenolic resin and the proportion of the phenolic resin having the number of repetitions n = 1 in the general formula (1) is a specific proportion in the whole phenolic resin component, it has good fluidity, Excellent evaluation results are also obtained in the soldering resistance evaluation test, and a more reliable semiconductor device is obtained.

When butadiene rubber particles are used together with the above components, more excellent low stress properties can be obtained.
For example, good results can be obtained in a temperature cycle test.

Further, when a silicone compound having at least two functional groups, for example, a silicone compound represented by the general formula (6) or a silicone compound represented by the general formula (8) is used, More excellent low stress properties can be obtained, and high reliability can be obtained.

[Brief description of the drawings]

FIGS. 1A and 1B are explanatory diagrams showing a method for measuring the roundness of an inorganic filler.

FIG. 2 is a front view showing a package used for measuring a gold wire flow amount.

FIG. 3 is an explanatory diagram showing a method of measuring a gold wire flow rate.

FIG. 4 is a front view showing a package used for measuring a die shift amount.

FIG. 5 is an explanatory view showing a method of measuring a die shift;
(A) is a sectional view showing a state where a die shift has occurred, and (b) is a sectional view showing a normal state.

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Claims (9)

[Claims] 1. An epoxy resin composition for semiconductor encapsulation comprising the following components (A) to (C): (A) Epoxy resin. (B) A phenol resin having a repeating number n = 1 in the following general formula (1) is represented by the general formula (1) occupying 50% by weight or more of the whole phenol resin represented by the general formula (1). Phenolic resin. Embedded image (C) A mixture of three kinds of inorganic fillers having the following average particle diameters (x), (y) and (z), wherein the inorganic filler having the above average particle diameter (x) is 50% of the entire mixture. ~ 92
% By weight, the inorganic filler having the above average particle size (y) is set to 5 to 40% by weight of the whole mixture, and the inorganic filler having the above average particle size (z) is set to 3 to 15% by weight of the whole mixture. I have. (X) Average particle size of 20 to 60 μm. (Y) When α is the average particle size of the inorganic filler selected and used from those having an average particle size of 20 to 60 μm which is the above (x), 0.1α ≦ average particle size (μm) ≦ 0.2α. Average particle size expressed. (Z) When α is the average particle size of the inorganic filler selected and used from those having an average particle size of 20 to 60 μm as described in (x) above, 0.01α ≦ average particle size (μm) <0.1α. Average particle size expressed. 2. In addition to the phenol resin as the component (B), the phenol resin is selected from the group consisting of phenol resins represented by the following general formulas (2), (3), (4) and (5). 2. The semiconductor encapsulation according to claim 1, which comprises at least one phenolic resin and the proportion of the phenolic resin having the number of repetitions n = 1 in the general formula (1) is at least 20% by weight of the whole phenolic resin component. An epoxy resin composition for stopping. Embedded image Embedded image Embedded image Embedded image 3. The epoxy resin composition for semiconductor encapsulation according to claim 1, comprising butadiene rubber particles together with the components (A) to (C). 4. The epoxy resin composition for semiconductor encapsulation according to claim 1, further comprising a silicone compound having at least two functional groups, together with the components (A) to (C). . 5. The epoxy resin composition for semiconductor encapsulation according to claim 4, wherein the silicone compound is represented by the following general formula (6). Embedded image 6. The epoxy resin composition for semiconductor encapsulation according to claim 4, wherein the silicone compound is represented by the following general formula (8). Embedded image 7. The content ratio of the inorganic filler as the component (C) is 7% in the whole epoxy resin composition for semiconductor encapsulation.
The epoxy resin composition for semiconductor encapsulation according to any one of claims 1 to 6, which is at least 5% by weight. 8. The semiconductor according to claim 1, wherein 80% by weight or more of the entire inorganic filler as the component (C) is a fused silica powder having a roundness of 0.8 or more. Epoxy resin composition for sealing. 9. A semiconductor device comprising a semiconductor element encapsulated with the epoxy resin composition for semiconductor encapsulation according to claim 1.